CN111048480A - 电力电子模块 - Google Patents
电力电子模块 Download PDFInfo
- Publication number
- CN111048480A CN111048480A CN201910933883.4A CN201910933883A CN111048480A CN 111048480 A CN111048480 A CN 111048480A CN 201910933883 A CN201910933883 A CN 201910933883A CN 111048480 A CN111048480 A CN 111048480A
- Authority
- CN
- China
- Prior art keywords
- power electronic
- electronic component
- thermal insulator
- semiconductor chips
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Abstract
本申请提供了一种电力电子模块。电力电子部件包括:表面,其适于附接至散热器,所述表面形成电力电子部件的底表面;一个或更多个电力电子半导体芯片(3),其在底表面上方安装在基板(4)上;以及壳体(2),其包围一个或更多个电力电子半导体芯片。电力电子部件包括设置在一个或更多个电力电子半导体芯片上方的热绝缘体(21;31;41;51),使得底表面和热绝缘体(21;31;41;51)处在一个或更多个电力电子半导体芯片(3)的相对侧。
Description
技术领域
本发明涉及电力电子器件,具体地,涉及电力电子部件或电力电子模块。
背景技术
电力电子部件和电力电子模块在它们被操作时产生热。典型的电力电子部件包括二极管、晶体管、IGBT和晶闸管。典型的电力电子模块包括多个电力电子部件,所述多个电力电子部件内部地被布线在一起并且用作用于某些电气设备的构造块。电力电子模块可以例如内部地被布线成形成逆变桥。
电力电子部件和电力电子模块中的热主要在打开或关闭部件时在部件的切换瞬间期间生成。耗散的电力的量可以高达数百瓦,而且甚至超过一千瓦。
生成热的损耗在具有几平方厘米的面积的二极管和晶体管半导体芯片中形成。因此损耗密度可以超过每平方厘米100瓦,并且芯片的温度可能在使用期间升高到175摄氏度。
电力电子模块被构造成使得耗散的热通过模块的基板被传递到稳固地附接至基板的外部散热器。也可以在没有底板的情况下构造电力电子模块,在这种情况下,模块的底部附接至散热器。不管电力电子模块是否具有底板,都要使用散热器,并且电力电子模块具有意在附着在散热器上的表面。电力电子模块到散热器的热传递由于放置在电力电子模块的表面与散热器之间的热界面材料层而增加。
从半导体芯片到电力电子模块的底表面的热传递路径被设计为有效的,使得尽可能多的热通过该路径被传递至散热器。尽管大部分热都被传递至模块的底部,但是耗散的热中的某一部分被传递到模块中的其他位置。这种热通过诸如塑料构造部件和电气控制销的结构元件传递到模块的结构的其他部分。热还被传递到电力电子模块的壳体,并且从壳体进一步被传递到控制板,该控制板用于向模块的部件提供所需的控制电压。当控制板的温度增加时,控制板的可靠性减弱。增加的温度可能导致控制板的寿命缩短以及控制板故障。此外,驱动器卡的部件可能必须被选择成承受更高的温度,这增加了驱动器卡的成本。
发明内容
本发明的目的是提供一种用于解决以上问题的电力电子部件。本发明的目的通过如下电力电子部件来实现,所述电力电子部件的特征在于独立权利要求中陈述的那些特征。在从属权利要求中公开了本发明的优选实施方式。
本发明基于以下想法:将热绝缘材料提供给电力电子部件,使得部件外部的热传递受到其中热可能损坏或损害其他电气部件的区域限制。
本发明的电力电子部件的优点在于:电力半导体部件的产生的热不能过度地加热放置在电力电子部件附近的其他电子部件或电路。此外,本发明的电力电子部件在如下高IP等级设备中是有利的,其中,该高IP等级设备的壳体内部的热是问题所在。该有利特征基于以下事实:利用本发明的部件,热更有效地被传递到部件的底表面,热可以从部件的底表面被传递到外壳外部。
此外,当增加从电力半导体部件的底表面的热传递时,本发明允许增加电力电子半导体芯片的集成度。
附图说明
在下文中,将参照附图借助于优选实施方式更详细地描述本发明,在附图中:
图1示出了已知电力电子模块的截面的示例;
图2、图3、图4和图5示出了本发明的不同实施方式的截面。
具体实施方式
图1示出了已知电力电子部件的截面,更具体地,示出了具有多个电力电子半导体芯片的电力电子部件的截面。这样的部件通常被称为电力电子模块。在以下描述中,结合电力电子模块来描述电力电子部件。然而,应当清楚的是,本发明的电力电子部件可以仅包括一个电力电子半导体芯片。
在图1中,电力电子模块被示出为附接至散热器8。附接至散热器是通过模块的底板1。底板1形成模块的底表面,并且意在附着在诸如散热器的冷却元件上。利用基础焊料层7将基板4焊接至底板。在示例中,基板被形成为直接键合铜(DBC)基板,并且它由两个铜层5以及在铜层之间的陶瓷层6组成。在基板的顶部上存在焊接至基板的一个或更多个电力电子半导体芯片3。图1还示出了在半导体芯片3和基板4的顶部上的凝胶层10。涂敷凝胶层以保护芯片3不受周围大气中存在的可能污染物的影响。出于说明性目的,图1中将凝胶层的截面示出为矩形。然而,凝胶层是柔软且可变形的。
图2示出了本发明的电力电子部件的实施方式。在实施方式中,电力电子部件包括适于附接至散热器的表面。在实施方式中,该表面是电力电子部件的底板1的表面,因而形成电力电子部件的底表面。
电力电子部件还包括在底表面上方安装在基板4上的一个或更多个电力电子半导体芯片3。图2的截面示出了两个半导体芯片3,因此电力电子部件是电力电子模块。壳体2包围一个或更多个电力电子半导体芯片。
根据本发明,电力电子部件包括设置在一个或更多个电力电子半导体芯片上方的热绝缘体21。当电力电子部件的底表面和热绝缘体处在一个或更多个电力电子半导体芯片的相对侧并且处在基板4的相对侧时,热绝缘体在一个或更多个电力电子半导体芯片上方。
如图2中所示,热绝缘体21适于增加从半导体芯片3朝向模块的顶部的热阻。模块的顶部被限定为形成模块的外表面的壳体的表面。
在图2的实施方式中,电力电子部件包括在一个或更多个电力电子半导体芯片的顶部上的硅酮凝胶层10,并且热绝缘体被布置在壳体2内部硅酮凝胶层上方。术语“上方”应当被理解成使得底板处于底部,并且方向“向上”是指从底板朝向电力电子部件的壳体的方向。热绝缘体有效地阻挡从芯片朝向壳体的顶部的热传递。
根据图3中示出的本发明的实施方式,热绝缘体31被布置在半导体部件的壳体的顶部上。热绝缘体31阻挡来自电力半导体部件的热,使得具有电气部件的板32不会被过度加热。图3示出了控制板32或类似的板,其中电子电路附接在壳体2的顶部上。当电子电路用于控制电力电子部件的一个或更多个开关时,通常期望使电子电路靠近电力电子部件。在图3中,其他结构部件与图2的结构部件相对应,并且部件的编号与图2的部件的编号相对应。
根据实施方式,热绝缘体呈织物的形式。织物包括作为有效绝缘体的硅氧化物颗粒。当绝缘体呈织物的形式时,可以将绝缘体切割成一定形状并将绝缘体安装在期望的位置处。硅氧化物颗粒优选地是微米或纳米尺寸且多孔的颗粒。合适的硅氧化物的示例是气凝胶,已知气凝胶具有良好的热性能和电阻率。硅氧化物可以被布置在织物中,因此这样的织物具有低热导率和高电阻。
图4示出了本发明的另一实施方式。在该实施方式中,热绝缘体呈凝胶41的形式,凝胶41被涂敷在一个或更多个电力电子半导体芯片3的顶部上。如图4中所见,凝胶41被示出为覆盖基板4和半导体芯片3的顶表面。该凝胶由合适的基体材料例如硅形成,并且包括形成绝缘材料的硅氧化物颗粒。如结合图3的实施方式,硅氧化物呈微米或纳米尺寸的多孔颗粒的形式。在一个实施方式中,气凝胶用在硅基体中以获得凝胶状材料,该凝胶状材料可以被设置成覆盖半导体芯片和基板的顶表面。当使用凝胶状热绝缘体时,它代替图2和图3的实施方式中示出的单独的硅凝胶,原因是凝胶状热绝缘体保护半导体芯片免受潮湿和周围大气的影响。
图5示出了本发明的另一实施方式,其中,电力电子部件的壳体51包括具有硅氧化物颗粒的塑料材料,并且壳体形成热绝缘体。可以将硅氧化物颗粒掺杂在聚合物中,使得形成塑料复合材料,该塑料复合材料作为热绝缘体和电绝缘体都是有效的。塑料复合材料可以被压铸,并且可以通过压铸形成壳体。可用在塑料材料中的一种合适类型的硅氧化物是气凝胶。为了避免重复,图5的相应结构部件被编号为与前面的附图中的结构部件相同。
在上面,结合包括多个电力电子开关和芯片的电力电子部件即电力电子模块描述了本发明。在仅具有一个开关的部件中也存在相同的结构。
此外,在上面呈现的示例中的每个示例中,电力电子部件的底表面由内部地连接至基板的底板形成。也就是说,在示例中,底板是部件的一部分。本发明还可应用于其中底表面由基板的表面形成的电力电子部件,即,不具有底板的部件。当部件不具有底板时,热从基板直接传导到散热器。
对本领域技术人员而言明显的是,本发明构思可以以各种方式来实现。本发明及其实施方式不限于上述示例,而是可以在权利要求的范围内变化。
Claims (8)
1.一种电力电子部件,包括:
表面,其适于附接至散热器,所述表面形成所述电力电子部件的底表面;
一个或更多个电力电子半导体芯片(3),其在所述底表面上方安装在基板(4)上;以及
壳体(2),其包围所述一个或更多个电力电子半导体芯片,其特征在于,
所述电力电子部件包括设置在所述一个或更多个电力电子半导体芯片上方的热绝缘体(21;31;41;51),使得所述底表面和所述热绝缘体(21;31;41;51)处在所述一个或更多个电力电子半导体芯片(3)的相对侧。
2.根据权利要求1所述的电力电子部件,其中,所述电力电子部件还包括在所述一个或更多个半导体芯片(3)的顶部上的硅酮凝胶层(10),所述热绝缘体在所述硅酮凝胶层上方。
3.根据权利要求2所述的电力电子部件,其中,所述热绝缘体被布置在所述壳体内部。
4.根据权利要求2所述的电力电子部件,其中,所述热绝缘体(31)被布置在所述壳体的顶部上。
5.根据前述权利要求1至4中任一项所述的电力电子部件,其中,所述热绝缘体呈织物的形式,所述织物包括硅氧化物颗粒。
6.根据权利要求1所述的电力电子部件,其中,所述热绝缘体是被涂敷在所述一个或更多个电力电子半导体芯片(3)的顶部上的凝胶(41)。
7.根据权利要求6所述的电力电子部件,其中,所述凝胶包括硅氧化物颗粒。
8.根据权利要求1所述的电力电子部件,其中,所述电力电子部件的壳体(51)包括具有硅氧化物颗粒的塑料材料,并且壳体充当所述热绝缘体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18199846.9 | 2018-10-11 | ||
EP18199846.9A EP3637461A1 (en) | 2018-10-11 | 2018-10-11 | Power electronic module |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111048480A true CN111048480A (zh) | 2020-04-21 |
CN111048480B CN111048480B (zh) | 2022-12-20 |
Family
ID=63833903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910933883.4A Active CN111048480B (zh) | 2018-10-11 | 2019-09-29 | 电力电子模块 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11297727B2 (zh) |
EP (1) | EP3637461A1 (zh) |
CN (1) | CN111048480B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3937228A1 (en) * | 2020-07-08 | 2022-01-12 | ABB Schweiz AG | Cooling arrangement |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026821A (ja) * | 2007-07-17 | 2009-02-05 | Sekisui Chem Co Ltd | 光半導体用封止剤及びトップビュー型光半導体素子 |
JP2010021429A (ja) * | 2008-07-11 | 2010-01-28 | Murata Mfg Co Ltd | 電子機器およびその製造方法 |
JP2011082389A (ja) * | 2009-10-08 | 2011-04-21 | Shindengen Electric Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
CN102664172A (zh) * | 2012-05-17 | 2012-09-12 | 浙江大学 | 功率模块的封装结构 |
CN104552708A (zh) * | 2014-06-24 | 2015-04-29 | 深圳青铜剑电力电子科技有限公司 | 一种制作导热硅胶片的模具及其使用方法 |
US20170341638A1 (en) * | 2016-05-24 | 2017-11-30 | Rohm Co., Ltd. | Intelligent power module, electric vehicle or hybrid vehicle, and method of assembling intelligent power module |
WO2018180356A1 (ja) * | 2017-03-30 | 2018-10-04 | 株式会社オートネットワーク技術研究所 | 回路装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4097613B2 (ja) * | 2004-03-09 | 2008-06-11 | 三菱電機株式会社 | 半導体装置 |
US8963321B2 (en) * | 2011-09-12 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
US20140133105A1 (en) * | 2012-11-09 | 2014-05-15 | Nvidia Corporation | Method of embedding cpu/gpu/logic chip into a substrate of a package-on-package structure |
-
2018
- 2018-10-11 EP EP18199846.9A patent/EP3637461A1/en active Pending
-
2019
- 2019-09-29 CN CN201910933883.4A patent/CN111048480B/zh active Active
- 2019-10-10 US US16/598,131 patent/US11297727B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026821A (ja) * | 2007-07-17 | 2009-02-05 | Sekisui Chem Co Ltd | 光半導体用封止剤及びトップビュー型光半導体素子 |
JP2010021429A (ja) * | 2008-07-11 | 2010-01-28 | Murata Mfg Co Ltd | 電子機器およびその製造方法 |
JP2011082389A (ja) * | 2009-10-08 | 2011-04-21 | Shindengen Electric Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
CN102664172A (zh) * | 2012-05-17 | 2012-09-12 | 浙江大学 | 功率模块的封装结构 |
CN104552708A (zh) * | 2014-06-24 | 2015-04-29 | 深圳青铜剑电力电子科技有限公司 | 一种制作导热硅胶片的模具及其使用方法 |
US20170341638A1 (en) * | 2016-05-24 | 2017-11-30 | Rohm Co., Ltd. | Intelligent power module, electric vehicle or hybrid vehicle, and method of assembling intelligent power module |
WO2018180356A1 (ja) * | 2017-03-30 | 2018-10-04 | 株式会社オートネットワーク技術研究所 | 回路装置 |
Also Published As
Publication number | Publication date |
---|---|
CN111048480B (zh) | 2022-12-20 |
US20200120825A1 (en) | 2020-04-16 |
US11297727B2 (en) | 2022-04-05 |
EP3637461A1 (en) | 2020-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7696532B2 (en) | Power semiconductor module | |
US7872869B2 (en) | Electronic chip module | |
US9572291B2 (en) | Semiconductor device and method for manufacturing same | |
JP6757742B2 (ja) | パワーモジュールおよびパワーモジュールの製造方法 | |
JP6907931B2 (ja) | 半導体モジュール | |
JP2019506753A (ja) | 多層回路基板に基づくパワーモジュール | |
US9385107B2 (en) | Multichip device including a substrate | |
US9589904B2 (en) | Semiconductor device with bypass functionality and method thereof | |
US9693482B2 (en) | Semiconductor device | |
JP2004047883A (ja) | 電力半導体装置 | |
CN111261598A (zh) | 封装结构及其适用的电源模块 | |
EP3376539A1 (en) | Stackable power module | |
CN210349834U (zh) | 双面散热的功率器件模组 | |
US10658261B2 (en) | Semiconductor device | |
CN111048480B (zh) | 电力电子模块 | |
EP3958305B1 (en) | Power semiconductor module arrangement and method for producing the same | |
JP2004221381A (ja) | 半導体装置 | |
CN210379025U (zh) | 功率器件封装结构 | |
JP5039388B2 (ja) | 回路装置 | |
US10251256B2 (en) | Heat dissipating structure | |
JP2014146688A (ja) | 半導体装置 | |
JP6060053B2 (ja) | パワー半導体装置 | |
US20230223331A1 (en) | Semiconductor module | |
EP4102555A1 (en) | Power semiconductor module | |
WO2024033118A1 (en) | Power-module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |