CN111044804B - Piezoelectric coefficient measuring method for piezoelectric material - Google Patents
Piezoelectric coefficient measuring method for piezoelectric material Download PDFInfo
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- CN111044804B CN111044804B CN201911272036.4A CN201911272036A CN111044804B CN 111044804 B CN111044804 B CN 111044804B CN 201911272036 A CN201911272036 A CN 201911272036A CN 111044804 B CN111044804 B CN 111044804B
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- 239000000463 material Substances 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims description 21
- 239000000523 sample Substances 0.000 claims abstract description 170
- 239000010408 film Substances 0.000 claims description 64
- 239000010409 thin film Substances 0.000 claims description 48
- 238000012545 processing Methods 0.000 claims description 41
- 238000012360 testing method Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 7
- 238000000691 measurement method Methods 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004556 laser interferometry Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/22—Measuring piezoelectric properties
Abstract
The probe of the invention presses down the piezoelectric film material for the first time through the higher pressing speed a1, and determines the position of the piezoelectric film material to be detected at a higher speed. When the driving device drives the probe to move upwards, the probe only needs to move upwards by a small distance to be separated from the piezoelectric film material. When the driving device drives the probe to move downwards for the second time, the required pressure can be accurately applied to the piezoelectric film material in a short time, so that the detection efficiency and precision are improved.
Description
Technical Field
The invention relates to the field of piezoelectric coefficient measurement, in particular to a piezoelectric coefficient measurement method for a piezoelectric material.
Background
The piezoelectric coefficient measuring method of the piezoelectric material comprises the following steps: direct force measurements (Berlincourt method), laser interferometry (laser interferometer), laser Doppler vibrometers (laser scanning microscopes) and Piezoelectric force microscopes (piezoelectronic force microscopes). The laser interferometry, the laser Doppler vibrometer and the piezoelectric force microscopy all adopt inverse piezoelectric effect, namely, a material generates deformation effect by adding voltage signals, the piezoelectric coefficient is measured, the measurement precision is high, but the equipment is expensive, and the requirement on the measurement environment is high. The direct force application measurement method is a method for measuring the piezoelectric coefficient by utilizing a direct piezoelectric effect, namely a mode of generating charges on a material by applying force, and although the method is not higher than other 3 measurement methods in terms of measurement accuracy, the price of a measurement device is low, and the use and operation are simple.
A testing device adopted in a currently common measuring method is shown in fig. 3, and includes an electromagnetic drive 1, electrodes 2, a reference sample 3, an insulating body 4, and a probe 5, specifically, a sample 6 to be measured is fixed between the two electrodes 5, an alternating signal of the electromagnetic drive 1 generates vibration, so that the magnitude of a force applied to the sample 6 to be measured regularly changes, and the relationship between the magnitude of an electric signal generated by the sample 6 to be measured in a capacitor C1 and the magnitude of an electric signal generated by the reference sample 3 with a known piezoelectric coefficient in a capacitor C2 is compared to obtain the piezoelectric coefficient of the sample 1, and generally C1 is set to C2. However, such a measuring device is generally only capable of measuring piezoelectric ceramic materials having a thickness of 100 μm or more, and is not capable of measuring piezoelectric thin-film materials having a thickness of 10 μm or less.
In order to transmit the vibration signal to the sample 6 effectively, the magnitude of the initial force applied to both ends of the sample 6 is generally several tens of grams or more. The piezoelectric coefficient measured in this case is actually only the piezoelectric coefficient of the sample 6 to be measured in the vicinity of the force, and does not accurately reflect the true characteristics of the piezoelectric material.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a piezoelectric coefficient measuring method for piezoelectric materials, which adopts a piezoelectric coefficient measuring device to measure piezoelectric thin film materials, and has the advantages of simple operation, wide measuring range and short measuring time.
The invention also aims to solve the technical problems that the piezoelectric coefficient measuring method of the piezoelectric material can measure the piezoelectric film materials with different thicknesses, the measuring range is wide, and the measuring time is short.
In order to solve the technical problem, the invention provides a piezoelectric coefficient measuring method of a piezoelectric material, which adopts a piezoelectric coefficient measuring device to measure a piezoelectric film material;
the piezoelectric coefficient measuring device comprises a force application device, a probe and a signal processing device, wherein the probe is connected with an electrode of a piezoelectric film material and is connected with the signal processing device through a lead;
the force applying device comprises a probe, a force sensor and a driving device, and the force sensor and the driving device are connected with the signal processing device through a lead;
the probe is located at an initial position, the driving device drives the probe to move downwards for the first time, so that the probe presses down the piezoelectric film material for the first time, and the pressing speed of the probe is a 1;
when the signal output by the force sensor to the signal processing device reaches a preset value, the driving device drives the probe to move upwards so as to separate the probe from the piezoelectric film material;
when the probe moves to the preset distance, the driving device drives the probe to move downwards for the second time, so that the probe presses the piezoelectric film material for the second time, the pressing speed of the probe is a2, the initial pressure of the probe on the piezoelectric film material is F0, and the signal processing device obtains an electric signal of the piezoelectric film material, wherein A0 is obtained.
As an improvement of the scheme, a2 < a 1.
As an improvement of the above scheme, the probe presses down the piezoelectric thin film material for the first time and the probe presses down the piezoelectric thin film material for the second time, the probe performs the action of pressing down the piezoelectric thin film material for n times, and n is more than or equal to 0:
when the probe presses down the piezoelectric film material for the nth time, the pressing speed of the probe is an, and the pressure generated by the probe on the piezoelectric film material is Fn.
As an improvement of the scheme, the probe applies a test pressure F1 to the piezoelectric film material, and the signal processing device obtains an electric signal A1 of the piezoelectric film material, wherein F1 is more than F0.
As a modification of the above, the time interval between the first pressing of the piezoelectric thin film material by the probe and the second pressing of the piezoelectric thin film material by the probe is greater than or equal to 10 milliseconds.
As an improvement of the scheme, the driving device comprises a motor, a transmission rod and a movable module, wherein the motor is connected with the movable module through the transmission rod, and the movable module is provided with the probe.
As an improvement of the above, the probe includes a contact portion and an elastic member connected to the contact portion, the contact portion is made of a conductive metal, and the elastic member is a spring.
As an improvement of the above scheme, the probe includes a first probe and a second probe, the first probe is connected to the first electrode of the piezoelectric thin film material, the second probe is connected to the second electrode of the piezoelectric thin film material, and the first probe and the second probe are connected to the signal processing device through wires, so that the signal processing device obtains an electrical signal generated by the piezoelectric thin film material.
As an improvement of the above scheme, the probe is connected with the first electrode of the piezoelectric thin film material, the contact part is connected with the second electrode of the piezoelectric thin film material, and the probe and the contact part are connected with the signal processing device through a lead so that the signal processing device acquires an electric signal generated by the piezoelectric thin film material.
As an improvement of the scheme, the distance between the initial position of the probe and the piezoelectric film material is more than 40 mm.
The implementation of the invention has the following beneficial effects:
the probe of the invention firstly presses down the piezoelectric film material with a faster pressing speed a1, and determines the position of the piezoelectric film material to be detected with a faster speed. When the driving device drives the probe to move upwards, the probe only needs to move upwards by a small distance to be separated from the piezoelectric film material. When the driving device drives the probe to move downwards for the second time, the required pressure can be accurately applied to the piezoelectric film material in a short time, so that the detection efficiency and precision are improved.
In addition, the test pressure of the piezoelectric film material can be tested from a smaller F0, and the piezoelectric film material can be stressed by a stress application device to reach the required test pressure, wherein the test pressure is F1, and meanwhile, the signal processing device obtains the electric signal of the piezoelectric film material to be A1, wherein F1 is more than F0. The initial pressure F0 of the piezoelectric film material can reach a very small value, so the test range of the piezoelectric film material can be very wide.
Furthermore, according to the required measuring force, different pressing speeds are adopted, so that the measuring accuracy and the measuring speed can be ensured. If the required measuring force is small, the pressing speed of the probe is slow, and the phenomenon that the impulse force generated when the probe is contacted with a measured object is overlarge and even exceeds the required measuring force can be avoided, so that the measuring precision is ensured; if the required measuring force is large, the probe can quickly move to enable the applied force to reach the required value in a short time, so that the measuring speed is improved.
Drawings
FIG. 1 is a schematic view of a piezoelectric thin film material measured by a piezoelectric coefficient measuring apparatus according to embodiment 1 of the present invention;
FIG. 2 is a schematic view of a piezoelectric thin film material measured by the piezoelectric coefficient measuring apparatus according to embodiment 2 of the present invention;
fig. 3 is a schematic diagram of a conventional piezoelectric coefficient measuring apparatus for measuring a piezoelectric thin film material.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
The invention provides a piezoelectric coefficient measuring method of piezoelectric material, which adopts a piezoelectric coefficient measuring device to measure piezoelectric film material;
the piezoelectric coefficient measuring device comprises a force application device, a probe and a signal processing device, wherein the probe is connected with an electrode of a piezoelectric film material and is connected with the signal processing device through a lead;
the force applying device comprises a probe, a force sensor and a driving device, and the force sensor and the driving device are connected with the signal processing device through a lead;
the probe is located at an initial position, the driving device drives the probe to move downwards for the first time, so that the probe presses down the piezoelectric film material for the first time, and the pressing speed of the probe is a 1;
when the signal output by the force sensor to the signal processing device reaches a preset value, the driving device drives the probe to move upwards so as to separate the probe from the piezoelectric film material;
when the probe moves to the preset distance, the driving device drives the probe to move downwards for the second time, so that the probe presses the piezoelectric film material for the second time, the pressing speed of the probe is a2, the initial pressure of the probe on the piezoelectric film material is F0, and the signal processing device obtains an electric signal of the piezoelectric film material, wherein A0 is obtained.
The probe of the invention firstly presses down the piezoelectric film material with a faster pressing speed a1, and determines the position of the piezoelectric film material to be detected with a faster speed. When the driving device drives the probe to move upwards, the probe only needs to move upwards by a small distance to be separated from the piezoelectric film material. When the driving device drives the probe to move downwards for the second time, the required pressure can be accurately applied to the piezoelectric film material in a short time, so that the detection efficiency and precision are improved.
Preferably, a2 < a 1. According to experimental data, when a2 is (0.01-0.5) a1, the piezoelectric coefficient of the piezoelectric thin film material can be measured more accurately in a shorter time.
It should be noted that the test pressure of the piezoelectric film material of the present invention can be tested from a smaller F0, and the piezoelectric film material can be forced by the force applying device to reach the required test pressure, where the test pressure is F1, and at the same time, the signal processing device obtains the electrical signal of the piezoelectric film material as a1, where F1 > F0. The initial pressure F0 of the piezoelectric film material can reach a very small value, so the test range of the piezoelectric film material can be very wide.
Furthermore, according to the required measuring force, different pressing speeds are adopted, so that the measuring accuracy and the measuring speed can be ensured. If the required measuring force is small, the pressing speed of the probe is slow, and the phenomenon that the impulse force generated when the probe is contacted with a measured object is overlarge and even exceeds the required measuring force can be avoided, so that the measuring precision is ensured; if the required measuring force is large, the probe can quickly move to enable the applied force to reach the required value in a short time, so that the measuring speed is improved.
It should be noted that, the probe presses down the piezoelectric thin film material for the first time and the probe presses down the piezoelectric thin film material for the second time, the probe performs the action of pressing down the piezoelectric thin film material for n times, n is greater than or equal to 0:
when the probe presses down the piezoelectric film material for the nth time, the pressing speed of the probe is an, and the pressure generated by the probe on the piezoelectric film material is Fn.
That is, the probe of the present invention can confirm the position of the piezoelectric thin film material by a plurality of movements.
Preferably, the time interval between the first pressing of the piezoelectric film material by the probe and the second pressing of the piezoelectric film material by the probe is greater than or equal to 10 milliseconds. The interval time of more than 10 milliseconds can enable electric charges to disappear, and influence on the second measurement is avoided.
Preferably, the initial position of the probe is more than 40mm away from the piezoelectric film material, which facilitates material installation.
The invention will be further illustrated by the following specific examples
Example 1
Referring to fig. 1, a piezoelectric coefficient measuring device comprises a force applying device, a probe and a signal processing device 1, wherein the probe comprises a first probe 21 and a second probe 22, the force applying device comprises a probe head, a force sensor 5 and a driving device, the probe head comprises a contact part 31 and an elastic part 32 connected with the contact part 31, the driving device comprises a motor 33, a transmission rod 34 and a movable module 35, the movable module 35 is installed on the elastic part 32, the motor 33 is connected with the movable module 35 through the transmission rod 34, and the probe head is installed on the movable module 35. The motor 33 drives the movable module 35 to move through the transmission rod 34, and the movable module 35 drives the probe to move.
The piezoelectric thin film material to be detected in the present embodiment includes a silicon substrate 41, a PZT piezoelectric thin film layer 42, a first electrode 43, and a second electrode 44, where the first electrode 43 is disposed between the silicon substrate 41 and the PZT piezoelectric thin film layer 42, and the second electrode 44 is disposed on the PZT piezoelectric thin film layer 42.
The thickness of the silicon substrate 41 is 0.5mm, the thickness of the PZT piezoelectric thin film layer 42 is 2 μm, and the thicknesses of the first electrode 43 and the second electrode 44 are both 100 nm.
The first probe 21 is connected with the first electrode 43, the second probe 22 is connected with the second electrode 44, and the first probe 21 and the second probe 22 are connected with the signal processing device 1 through conducting wires, so that the signal processing device 1 can obtain an electric signal generated by the piezoelectric thin film material.
The contact portion 31 of the probe of the present invention is made of stainless steel, and the elastic member 32 is a spring. The force sensor 5 is connected to the spring 32, the force sensor 5 and the motor 33 are connected with the signal processing device 1 through conducting wires, and a signal sent to the signal processing device 1 by the force sensor 5 indicates that the force generated by the deformation of the spring is large.
A piezoelectric coefficient measurement method of a piezoelectric material, comprising:
the probe is located at an initial position, the driving device drives the probe to move downwards for the first time so that the probe presses the piezoelectric film material for the first time, and the pressing speed of the probe is 10 mm/s;
when the signal output by the force sensor to the signal processing device indicates that the pressure of the probe on the piezoelectric thin film material is greater than or equal to 0.01N, the driving device drives the probe to move upwards so as to separate the probe from the piezoelectric thin film material;
when the probe moves to the preset distance, the driving device drives the probe to move downwards for the second time so that the probe presses the piezoelectric film material for the second time, the pressing speed of the probe is 0.1mm/s, the effect on the piezoelectric film material during contact is 0.05N, then force is continuously applied, the pressure of the probe on the piezoelectric film material reaches 0.5N, and the signal processing device obtains an electric signal A of the piezoelectric film material.
In the embodiment, the piezoelectric coefficient d33 of the piezoelectric film material under the pressure of 0.5N is calculated through the electric signal A. The calculation method related to the present invention is an existing calculation method of the piezoelectric coefficient, and the present invention is not particularly limited.
Example 2
Referring to fig. 2, the piezoelectric coefficient measuring device comprises a force applying device, a probe and a signal processing device 1, wherein the probe comprises a probe 2, the force applying device comprises a probe head, a force sensor 5 and a driving device, the probe head comprises a contact part 31 and an elastic part 32 connected with the contact part 31, the driving device comprises a motor 33, a transmission rod 34 and a movable module 35, the movable module 35 is installed on the elastic part 32, the motor 33 is connected with the movable module 35 through the transmission rod 34, and the probe head is installed on the movable module 35. The motor 33 drives the movable module 35 to move through the transmission rod 34, and the movable module 35 drives the probe to move.
The piezoelectric thin film material to be detected in the embodiment comprises a conductive support 41 and BaTiO3 A piezoceramic wafer 42, a first electrode 43 and a second electrode 44, the first electrodeThe electrode 43 is arranged on the conductive support 41 and BaTiO3The second electrode 44 is arranged between the piezoelectric ceramic plates 42 and the BaTiO3On the piezoceramic wafer 42. The thickness of the conductive support body is 0.5mm, and BaTiO3The thickness of the piezoelectric ceramic plate 42 is 2mm, and the thickness of each of the first electrode 43 and the second electrode 44 is 100 nm.
The contact portion 31 of the probe of the present invention is made of copper, and the elastic member 32 is a spring. The force sensor 5 is connected to a spring 32. The probe 2 is connected with the conductive support 41, the contact portion 31 is connected with the second electrode 44, and the probe 2 and the contact portion 31 are connected with the signal processing device 1 through a lead, so that the signal processing device 1 can obtain an electric signal generated by the piezoelectric thin film material.
The force sensor 5 and the motor 33 are connected with the signal processing device 1 through leads, and the signal sent to the signal processing device 1 by the force sensor 5 indicates the magnitude of the force generated by the deformation of the spring.
A piezoelectric coefficient measurement method of a piezoelectric material, comprising:
the probe is located at an initial position, the driving device drives the probe to move downwards for the first time so that the probe presses the piezoelectric film material for the first time, and the pressing speed of the probe is 5 mm/s;
when the signal output by the force sensor to the signal processing device indicates that the pressure of the probe on the piezoelectric thin film material is greater than or equal to 0.01N, the driving device drives the probe to move upwards so as to separate the probe from the piezoelectric thin film material;
when the probe moves to the preset distance, the driving device drives the probe to move downwards for the second time so that the probe presses the piezoelectric film material for the second time, the pressing speed of the probe is 2.5mm/s, the pressure of the probe on the piezoelectric film material reaches 1.5N, and the electric signal of the piezoelectric film material obtained by the signal processing device is A.
In the embodiment, the piezoelectric coefficient d33 of the piezoelectric film material under the pressure of 1.5N is calculated through the electric signal A. The calculation method related to the present invention is an existing calculation method of the piezoelectric coefficient, and the present invention is not particularly limited.
The motors in embodiments 1 and 2 of the present invention are servo motors or stepping motors, but are not limited thereto. The elastic piece of the invention can also be a spring plate or other elastic materials. Wherein, the diameter of the spring in the embodiment 1 of the invention is 10mm, the wire diameter is 0.8mm, and the elastic coefficient is 1N/mm; in example 2, the spring had a diameter of 5mm, a wire diameter of 0.7mm and an elastic modulus of 2N/mm.
The force sensor of example 1 has a range of 3N and the force sensor of example 2 has a range of 5N.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A piezoelectric coefficient measuring method of piezoelectric material is characterized in that a piezoelectric coefficient measuring device is adopted to measure piezoelectric film material;
the piezoelectric coefficient measuring device comprises a force application device, a probe and a signal processing device, wherein the probe is connected with an electrode of a piezoelectric film material and is connected with the signal processing device through a lead;
the force applying device comprises a probe, a force sensor and a driving device, and the force sensor and the driving device are connected with the signal processing device through a lead;
the probe is located at an initial position, the driving device drives the probe to move downwards for the first time, so that the probe presses down the piezoelectric film material for the first time, and the pressing speed of the probe is a 1;
when the signal output by the force sensor to the signal processing device reaches a preset value, the driving device drives the probe to move upwards so as to separate the probe from the piezoelectric film material;
when the probe moves to a preset distance, the driving device drives the probe to move downwards for the second time so that the probe presses down the piezoelectric film material for the second time, the pressing speed of the probe is a2, the initial pressure of the probe on the piezoelectric film material is F0, the F0 is the initial pressure of the second pressing, and the signal processing device obtains an electric signal of the piezoelectric film material as A0;
and calculating the piezoelectric coefficient of the piezoelectric film material according to the electric signal obtained by pressing the probe for the second time.
2. The method for measuring piezoelectric coefficient of piezoelectric material according to claim 1, wherein a2 < a 1.
3. The method for measuring piezoelectric coefficient of piezoelectric material according to claim 1, wherein the probe pushes down the piezoelectric thin film material for the first time and the probe pushes down the piezoelectric thin film material for the second time, the probe performs the action of pushing down the piezoelectric thin film material for n times, n is not less than 0:
when the probe presses down the piezoelectric film material for the nth time, the pressing speed of the probe is an, and the pressure generated by the probe on the piezoelectric film material is Fn.
4. The method for measuring the piezoelectric coefficient of a piezoelectric material according to claim 1, wherein the probe is pressed down with an initial pressure F0, and after contacting the piezoelectric thin film material, the probe continues to apply a force so that the pressure of the probe on the piezoelectric thin film material reaches a test pressure F1, and at this time, the signal processing device obtains an electrical signal of the piezoelectric thin film material as a 1; wherein F1 is more than F0.
5. The method for measuring piezoelectric coefficient of a piezoelectric material according to claim 1, wherein a time interval between the first pressing of the piezoelectric thin film material by the probe and the second pressing of the piezoelectric thin film material by the probe is 10 milliseconds or more.
6. The method for measuring piezoelectric coefficient of piezoelectric material according to claim 1, wherein the driving means comprises a motor, a transmission rod, and a movable module, the motor is connected to the movable module through the transmission rod, and the probe is mounted on the movable module.
7. The method for measuring piezoelectric coefficient of piezoelectric material according to claim 6, wherein the probe includes a contact portion and an elastic member connected to the contact portion, the contact portion is made of conductive metal, and the elastic member is a spring.
8. The method for measuring the piezoelectric coefficient of a piezoelectric material according to claim 7, wherein the probe comprises a first probe and a second probe, the first probe is connected to a first electrode of the piezoelectric thin film material, the second probe is connected to a second electrode of the piezoelectric thin film material, and the first probe and the second probe are connected to the signal processing device through a wire, so that the signal processing device can acquire the electric signal generated by the piezoelectric thin film material.
9. The method for measuring the piezoelectric coefficient of a piezoelectric material according to claim 7, wherein the probe is connected to a first electrode of the piezoelectric thin film material, the contact portion is connected to a second electrode of the piezoelectric thin film material, and the probe and the contact portion are connected to a signal processing device through a wire so that the signal processing device can acquire an electric signal generated by the piezoelectric thin film material.
10. The method for measuring piezoelectric coefficient of piezoelectric material according to claim 1, wherein the initial position of the probe is spaced from the piezoelectric thin film material by a distance of more than 40 mm.
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