CN111040324A - Composite heat dissipation material for semiconductor and preparation method thereof - Google Patents
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Abstract
The invention belongs to the field of heat conduction materials, and discloses a composite heat dissipation material for a semiconductor and a preparation method thereof. The composite heat dissipation material for the semiconductor comprises, by weight, 90-100 parts of resin powder, 8-15 parts of hexagonal boron nitride, 13-17 parts of hollow alumina, 15-20 parts of nano activated carbon powder, 7-13 parts of a dispersing agent, 8-15 parts of an adhesive and 10-15 parts of expanded graphite. The expanded graphite in the material has rich pore structure and high heat conductivity, the nano activated carbon powder doped with nano metal powder can be fully filled in pores of the expanded graphite, and is applied to a semiconductor electronic device with higher heat flow density with hollow alumina, hexagonal boron nitride with high electrical insulation performance and resin to form an insulated high heat dissipation surface, so that a heat conduction medium with high heat conductivity is provided for an electronic element, and the problem of heat accumulation of an electronic device module can be solved.
Description
Technical Field
The invention relates to the technical field of heat conduction materials, in particular to a composite heat dissipation material for a semiconductor and a preparation method thereof.
Background
The LED is a semiconductor light emitting diode built on a semiconductor transistor, with the development of technology and the extension of demand, the luminous flux and the light emitting efficiency of the LED are continuously improved, and a group of power LEDs constituting a high-power LED lighting source have been widely used in daily life and industrial production. Under actual environment, the LED chip modules used in groups are arranged in a certain form and welded on a special substrate in an array mode, and the LEDs can generate heat during working, and the heat is conducted to the lamp shell radiating fins through the substrate, so that the radiating purpose is achieved. However, the LED heat dissipation substrate and the heat dissipation fins of the lamp housing are both made of solid materials, and an air gap exists between the contact surfaces, so that the heat dissipation problem is increasingly prominent as the LED develops toward high light intensity and high power.
Except for the LED, a large amount of heat is generated in the running process of an electronic device, particularly a high-power and miniature electronic component, if the heat dissipation is not timely, the normal work of the component is influenced by the accumulated excessive heat, and the electronic component can be disabled or even accidents can be caused in serious cases. In order to solve the problem of heat accumulation of the electronic device module and improve the heat dissipation efficiency thereof, a heat conducting medium is generally required to be filled in the heat transfer gap to conduct heat to the housing or the heat sink.
Disclosure of Invention
The invention aims to overcome the defects of the background technology and provides a composite heat dissipation material for a semiconductor and a preparation method thereof.
According to one aspect of the invention, the composite heat dissipation material for the semiconductor comprises, by weight, 90-100 parts of resin powder, 8-15 parts of hexagonal boron nitride, 13-17 parts of hollow alumina, 15-20 parts of nano activated carbon powder, 7-13 parts of a dispersing agent, 8-15 parts of an adhesive and 10-15 parts of expanded graphite.
Preferably, the nano activated carbon powder comprises nano metallic nickel powder and nano activated carbon.
Preferably, the nano metallic nickel powder and the nano activated carbon are mixed according to a mass ratio of 1: 1-2.
Preferably, the resin powder is one or more of polystyrene resin, polyamide resin and polyphenylene oxide resin.
Preferably, the dispersing agent is one or more of oxidized polyethylene wax, polyoxyethylene ether acrylate and ethylene-vinyl acetate copolymer.
Preferably, the hollow alumina has a particle size of 1 to 3mm and a bulk density of 0.5 to 0.7g/cm3。
Preferably, the adhesive is EVA hot melt adhesive and polyvinyl acetal.
Preferably, the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal in the adhesive is 1-2: 1.
according to another aspect of the present invention, a method for preparing a composite heat dissipating material for a semiconductor includes: step S01: adding resin powder, hexagonal boron nitride, hollow alumina, nano activated carbon powder, a dispersing agent, an adhesive and expanded graphite into a high-speed mixer, and mixing to obtain a mixed material; step S02: feeding the mixed material into a double-screw extruder for melt extrusion; step S03: and cooling and granulating by a granulator to obtain the heat dissipation material.
Preferably, the nano activated carbon powder is prepared by uniformly mixing the nano metallic nickel powder and the nano activated carbon in distilled water, fully stirring after ultrasonic dispersion, filtering, washing and drying.
The expanded graphite used in the composite heat dissipation material of the semiconductor has rich pore structure and high heat conduction performance, the nano activated carbon powder doped with nano metal powder can be fully filled in the pores of the expanded graphite, and is applied to semiconductor electronic devices with higher heat flow density with hollow alumina, hexagonal boron nitride with high electrical insulation performance and resin to form an insulated high heat dissipation surface, so that a high-heat-conduction heat conduction medium is provided for electronic elements, and the problem of heat accumulation of electronic device modules can be solved.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention. It is to be understood that the following description is only illustrative of the present invention and is not to be construed as limiting the present invention.
Example 1
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 15 portions of hollow alumina, 18 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 13 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials for mixing, and are sent into a double-screw extruder for melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 2.73W/(m.K) according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow aluminaHas a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 2
Weighing 90 parts of resin powder, 8 parts of hexagonal boron nitride, 13 parts of hollow alumina, 15 parts of nano activated carbon powder, 7 parts of dispersing agent, 8 parts of adhesive and 10 parts of expanded graphite, performing ultrasonic dispersion on the nano activated carbon powder and the expanded graphite, fully stirring and uniformly mixing, adding the nano activated carbon powder and the expanded graphite into a high-speed mixer together with other materials, mixing, feeding the mixture into a double-screw extruder for melt extrusion, cooling the extruded material, and granulating by a granulator to obtain the composite heat dissipation material for the semiconductor, wherein the heat conductivity coefficient of the obtained material is 2.65W/(m.K) according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1 in distilled water, fully stirring after ultrasonic dispersion, and then filtering, washing and drying to obtain the product; the resin is polyphenyl ether resin; the dispersing agent is polyoxyethylene ether acrylate; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 2: 1.
example 3
Weighing 100 parts of resin powder, 15 parts of hexagonal boron nitride, 17 parts of hollow alumina, 20 parts of nano activated carbon powder, 13 parts of dispersing agent, 15 parts of adhesive and 15 parts of expanded graphite, performing ultrasonic dispersion on the nano activated carbon powder and the expanded graphite, fully stirring and uniformly mixing the nano activated carbon powder and the expanded graphite, adding the nano activated carbon powder and the expanded graphite into a high-speed mixer together for mixing, feeding the mixture into a double-screw extruder for melt extrusion, cooling the extruded material, and granulating the extruded material by a granulator to obtain the composite heat dissipation material for the semiconductor, wherein the heat conductivity coefficient of the obtained material is 2.71W/(m.K) measured by a method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 2 in the distillationMixing in water, ultrasonic dispersing, stirring, filtering, washing, and drying; the resin is polyamide resin; the dispersing agent is an ethylene-vinyl acetate copolymer; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1: 1.
example 4
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 15 portions of hollow alumina, 18 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 13 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials for mixing, and are sent into a double-screw extruder for melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 1.67W/(m.K) according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 0.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 5
According to the weight portion, 95 portions of resin powder, 15 portions of hollow alumina, 18 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 13 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are firstly subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials to be mixed, and are sent into a double-screw extruder to be subjected to melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 2.01W/(m.K) measured according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 6
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 18 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 13 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials to be mixed, and are sent into a double-screw extruder to be subjected to melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 1.78W/(m.K) measured according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 7
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 15 portions of hollow alumina, 18 portions of nano activated carbon powder, 10 portions of dispersing agent and 12 portions of adhesive are weighed, all the materials are added into a high-speed mixer together to be mixed, then the mixture is sent into a double-screw extruder to be melted and extruded, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 1.12W/(m.K) measured according to the method specified in ASTM D5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 8
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 15 portions of hollow alumina, 18 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 13 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials for mixing, and are sent into a double-screw extruder for melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 1.86W/(m.K) measured according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 3, uniformly mixing the mixture in distilled water, fully stirring the mixture after ultrasonic dispersion, and then filtering, washing and drying the mixture to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
example 9
According to the weight portion, 95 portions of resin powder, 12 portions of hexagonal boron nitride, 15 portions of hollow alumina, 10 portions of nano activated carbon powder, 10 portions of dispersing agent, 12 portions of adhesive and 20 portions of expanded graphite are weighed, the nano activated carbon powder and the expanded graphite are subjected to ultrasonic dispersion and then are fully stirred and uniformly mixed, then are added into a high-speed mixer together with other materials for mixing, and are sent into a double-screw extruder for melt extrusion, the extruded material is cooled and granulated by a granulator to obtain the composite heat dissipation material for the semiconductor, and the heat conductivity coefficient of the obtained material is 1.57W/(m.K) according to the method specified in ASTMD 5470.
Wherein the nano activated carbon powder is prepared by mixing nano metallic nickel powder and nano activated carbon according to a mass ratio of 1: 1.5, mixing the mixture in distilled water uniformly, performing ultrasonic dispersion, fully stirring, filtering, washing and drying to obtain the product; the resin is polystyrene resin; the dispersing agent is oxidized polyethylene wax; the hollow alumina has a particle diameter of 1-3mm and a bulk density of 0.5-0.7g/cm3(ii) a The adhesive is EVA hot melt adhesive and polyvinyl acetal, and the mass ratio of the EVA hot melt adhesive to the polyvinyl acetal is 1.5: 1.
it will be understood by those skilled in the art that the foregoing is only exemplary of the present invention, and is not intended to limit the invention, which is intended to cover any variations, equivalents, or improvements therein, which fall within the spirit and scope of the invention.
Claims (10)
1. A composite heat sink material for a semiconductor, comprising: the composite heat dissipation material for the semiconductor comprises, by weight, 90-100 parts of resin powder, 8-15 parts of hexagonal boron nitride, 13-17 parts of hollow alumina, 15-20 parts of nano activated carbon powder, 7-13 parts of a dispersing agent, 8-15 parts of an adhesive and 10-15 parts of expanded graphite.
2. The composite heat dissipating material for semiconductors of claim 1, wherein the nano activated carbon powder comprises nano metallic nickel powder and nano activated carbon.
3. The composite heat dissipating material for semiconductors as claimed in claim 2, wherein the nano metallic nickel powder and nano activated carbon are mixed in a mass ratio of 1: 1-2.
4. The composite heat dissipating material for semiconductors as claimed in claim 1, wherein the resin powder is one or more of polystyrene resin, polyamide resin, polyphenylene ether resin.
5. The composite heat dissipating material for semiconductors as claimed in claim 1, wherein the dispersant is one or more of oxidized polyethylene wax, polyoxyethylene ether acrylate, and ethylene-vinyl acetate copolymer.
6. The composite heat dissipating material for semiconductors as claimed in claim 1, wherein the hollow alumina has a particle size of 1 to 3mm and a bulk density of 0.5 to 0.7g/cm3。
7. The composite heat dissipation material for semiconductors of claim 1, wherein the adhesive is EVA hot melt adhesive and polyvinyl acetal.
8. The composite heat dissipation material for semiconductors as claimed in claim 7, wherein the mass ratio of EVA hot melt adhesive to polyvinyl acetal in the adhesive is 1-2: 1.
9. the method for preparing a composite heat dissipating material for semiconductors according to any one of claims 1 to 8, comprising
Step S01: adding resin powder, hexagonal boron nitride, hollow alumina, nano activated carbon powder, a dispersing agent, an adhesive and expanded graphite into a high-speed mixer, and mixing to obtain a mixed material;
step S02: feeding the mixed material into a double-screw extruder for melt extrusion;
step S03: and cooling and granulating by a granulator to obtain the heat dissipation material.
10. The composite heat dissipation material for semiconductors of claim 9, wherein the nano activated carbon powder is prepared by uniformly mixing the nano metallic nickel powder and the nano activated carbon in distilled water, performing ultrasonic dispersion, fully stirring, filtering, washing, and drying.
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Application publication date: 20200421 |