CN111033766A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN111033766A CN111033766A CN201780082750.XA CN201780082750A CN111033766A CN 111033766 A CN111033766 A CN 111033766A CN 201780082750 A CN201780082750 A CN 201780082750A CN 111033766 A CN111033766 A CN 111033766A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000011810 insulating material Substances 0.000 claims description 43
- 239000007772 electrode material Substances 0.000 claims description 17
- 230000000149 penetrating effect Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 7
- 239000002096 quantum dot Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
本发明提供了一种半导体器件及其制造方法，该半导体器件包括：衬底(106)、键合金属层(105)、反射层(104)、第一导电层(101)、活性层(102)、第二导电层(103)、第一电极(107)、第二电极(108)。所述第一电极(107)从所述键合金属层(105)远离所述衬底(106)的一侧延伸至所述第一导电层(101)，与所述键合金属层(105)及第一导电层(101)连接。所述第二电极(108)贯穿所述衬底(106)、键合金属层(105)与所述反射层(104)接触。该半导体器件形成共用第一导电层(101)的结构，出光更均匀，光提取率更高，消除了像素单元间的干扰，发光波长的均匀性更好，流过不同像素单元的电流更加均匀。
Description
PCT国内申请，说明书已公开。
Claims (11)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/070990 WO2018129697A1 (zh) | 2017-01-12 | 2017-01-12 | 半导体器件及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111033766A true CN111033766A (zh) | 2020-04-17 |
| CN111033766B CN111033766B (zh) | 2022-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780082750.XA Active CN111033766B (zh) | 2017-01-12 | 2017-01-12 | 半导体器件及其制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10446605B2 (zh) |
| KR (1) | KR102355049B1 (zh) |
| CN (1) | CN111033766B (zh) |
| TW (1) | TWI713808B (zh) |
| WO (1) | WO2018129697A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103606A1 (zh) * | 2021-12-08 | 2023-06-15 | 镭昱光电科技(苏州)有限公司 | 微显示led芯片结构及其制作方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11664363B2 (en) | 2018-10-17 | 2023-05-30 | Seoul Viosys Co., Ltd. | Light emitting device and method of manufacturing the same |
| CN110767642B (zh) * | 2019-12-25 | 2020-09-01 | 佛山市国星半导体技术有限公司 | 一种阵列集成微型led芯片及其制作方法 |
| US11114587B1 (en) * | 2020-02-25 | 2021-09-07 | Odyssey Semiconductor, Inc. | Streamlined GaN-based fabrication of light emitting diode structures |
| CN114512504A (zh) * | 2022-01-28 | 2022-05-17 | 上海芯元基半导体科技有限公司 | 防光串扰Micro-LED芯片结构、制备方法以及Micro-LED显示装置 |
| CN114628432B (zh) * | 2022-02-28 | 2023-03-10 | 诺视科技(苏州)有限公司 | 一种半导体装置的制作方法及半导体装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120007120A1 (en) * | 2010-07-12 | 2012-01-12 | Hak Hwan Kim | Light emitting device and method of manufacturing the same |
| US20140014990A1 (en) * | 2012-07-12 | 2014-01-16 | Samsung Electronics Co., Ltd. | Light-emitting device packages and methods of manufacturing the same |
| TW201403868A (zh) * | 2009-12-16 | 2014-01-16 | Epistar Corp | 發光元件及其製造方法 |
| CN103794689A (zh) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | 覆晶式led芯片的制作方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101766298B1 (ko) | 2011-03-30 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
| TW201347141A (zh) | 2012-05-04 | 2013-11-16 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
| CN103390713B (zh) | 2013-07-19 | 2016-04-13 | 深圳大道半导体有限公司 | 带光反射层的半导体发光器件 |
| JP6499400B2 (ja) * | 2014-04-04 | 2019-04-10 | キヤノン株式会社 | 半導体装置の製造方法 |
| WO2017094461A1 (ja) * | 2015-12-01 | 2017-06-08 | シャープ株式会社 | 画像形成素子 |
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2017
- 2017-01-12 CN CN201780082750.XA patent/CN111033766B/zh active Active
- 2017-01-12 WO PCT/CN2017/070990 patent/WO2018129697A1/zh active Application Filing
- 2017-01-12 KR KR1020197023523A patent/KR102355049B1/ko active IP Right Grant
- 2017-01-12 US US15/763,610 patent/US10446605B2/en active Active
- 2017-12-08 TW TW106143137A patent/TWI713808B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201403868A (zh) * | 2009-12-16 | 2014-01-16 | Epistar Corp | 發光元件及其製造方法 |
| US20120007120A1 (en) * | 2010-07-12 | 2012-01-12 | Hak Hwan Kim | Light emitting device and method of manufacturing the same |
| US20140014990A1 (en) * | 2012-07-12 | 2014-01-16 | Samsung Electronics Co., Ltd. | Light-emitting device packages and methods of manufacturing the same |
| CN103794689A (zh) * | 2014-02-25 | 2014-05-14 | 深圳市兆明芯科技控股有限公司 | 覆晶式led芯片的制作方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103606A1 (zh) * | 2021-12-08 | 2023-06-15 | 镭昱光电科技(苏州)有限公司 | 微显示led芯片结构及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10446605B2 (en) | 2019-10-15 |
| WO2018129697A1 (zh) | 2018-07-19 |
| TW201843846A (zh) | 2018-12-16 |
| KR20190140435A (ko) | 2019-12-19 |
| TWI713808B (zh) | 2020-12-21 |
| CN111033766B (zh) | 2022-07-08 |
| KR102355049B1 (ko) | 2022-01-25 |
| US20190051697A1 (en) | 2019-02-14 |
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