CN111029483B - OLED panel and manufacturing method thereof - Google Patents
OLED panel and manufacturing method thereof Download PDFInfo
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- CN111029483B CN111029483B CN201911319591.8A CN201911319591A CN111029483B CN 111029483 B CN111029483 B CN 111029483B CN 201911319591 A CN201911319591 A CN 201911319591A CN 111029483 B CN111029483 B CN 111029483B
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- thin film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present disclosure provides an OLED panel and a method of fabricating the same. The OLED panel includes: array substrate and thin film packaging structure. The thin film packaging structure is arranged on the upper side of the array substrate. When the packaging layer of the second light-transmitting area of the thin film packaging structure is removed by laser etching or cutting, the dam structure of the thin film packaging structure can prevent cracks generated in the second light-transmitting area from extending towards the effective packaging area of the thin film packaging structure.
Description
Technical Field
The disclosure relates to the field of display technologies, and in particular, to an OLED panel and a method for manufacturing the same.
Background
An Active-matrix organic light emitting diode (AMOLED) panel is also known. It has self-luminous characteristic, and adopts flexible substrate, flexible LTPS (low-temperature polysilicon) process and high-efficiency OLED (organic light-emitting diode) display technology. Compared with an LCD (liquid crystal display panel), the AMOLED panel is self-luminous, does not need a backlight source, has the advantages of fast response, high color gamut, high contrast, wide viewing angle, low power consumption, foldability, light weight, thin thickness, simple structure, low cost and the like, and is considered to be one of the most promising products.
Due to the advantages of AMOLED, mobile devices incorporating AMOLED are becoming mainstream. The arrangement of a common camera in the market at present adopts a special-shaped screen (Notch screen) and a lifting design, but in order to realize the design of a full screen and a narrow frame, the integration in a Camera (CUP) and a sensor (sensor) screen under the screen is the development trend of a mobile phone screen.
The camera display screen needs to promote the transmittance of the display screen area above the camera in order to ensure the photographing effect. The transmittance of the area can be improved in various ways, and a part of the film layer can be removed by Laser etching (Laser Etch), or the area can be cut to remove the whole film layer of the display screen in the area.
However, both of the above methods may cause cracks in the inorganic layer of the package. Under the condition of no barrier, the cracks are easy to extend to the display area, so that the packaging effect is influenced, and the product reliability is further influenced.
Therefore, there is a need to provide a method for fabricating an OLED panel structure to solve the problems of the prior art.
Disclosure of Invention
In order to solve the above-mentioned problems, an objective of the present disclosure is to provide an OLED panel and a method for manufacturing the same, in which a cross-section difference and crack stop structure formed on a thin film encapsulation structure can prevent cracks from extending toward an effective encapsulation area of the thin film encapsulation structure when an encapsulation layer is evaporated or removed by laser etching or cutting, so as to improve reliability of a terminal product.
To achieve the above objective, the present disclosure provides an OLED panel. The OLED panel includes: array substrate and thin film packaging structure. The array substrate defines a first light-transmitting area and an effective display area which is arranged around the first light-transmitting area. The thin film packaging structure is arranged on the upper side of the array substrate and sequentially comprises an insulating thin film, a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer from bottom to top. The thin film packaging structure defines a second light-transmitting area and an effective packaging area which is annularly arranged in the second light-transmitting area, the second light-transmitting area is correspondingly arranged above the first light-transmitting area of the array substrate, the thin film packaging structure further comprises a dam bank structure, and the dam bank structure is arranged on the first inorganic packaging layer of the effective packaging area and is adjacent to the second light-transmitting area.
In one embodiment of the present disclosure, the second transparent region of the thin film encapsulation structure has only the insulating film and the second inorganic encapsulation layer thereon, or only the insulating film thereon.
In one embodiment of the present disclosure, the thin film encapsulation structure forms a cross-sectional difference at a junction of the second transparent region and the effective encapsulation region.
In one embodiment of the present disclosure, a super-stack layer is disposed above the profile difference.
In one embodiment of the present disclosure, the thin film encapsulation structure further has a crack stop structure, and the crack stop structure is disposed on the insulating film of the second light-transmitting area.
To achieve the above objective, the present disclosure provides a method for fabricating an OLED panel. The manufacturing method of the OLED panel comprises the following steps: step S1: providing an array substrate and a thin film packaging structure, wherein the thin film packaging structure is arranged on the upper side of the array substrate, the array substrate defines a first light-transmitting area and an effective display area which is annularly arranged in the first light-transmitting area, and the thin film packaging structure sequentially comprises an insulating film, a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer from bottom to top; step S2: carrying out a photoresist coating procedure on the thin film packaging structure; step S3: carrying out exposure and development procedures on the thin film packaging structure; step S4: etching the thin film packaging structure; and step S5: and carrying out a photoresist stripping procedure on the thin film packaging structure to form a second light-transmitting area defined by the thin film packaging structure and an effective packaging area annularly arranged in the second light-transmitting area. The second light-transmitting area of the thin film packaging structure is correspondingly arranged above the first light-transmitting area of the array substrate.
In one embodiment of the present disclosure, the second transparent region of the thin film encapsulation structure has only the insulating film and the second inorganic encapsulation layer thereon, or only the insulating film thereon.
In an embodiment of the present disclosure, the performing the photoresist stripping process on the thin film encapsulation structure further includes: and forming a section difference at the joint of the second light-transmitting area and the effective packaging area.
In one embodiment of the present disclosure, a super-stack layer is disposed above the profile difference.
In an embodiment of the present disclosure, the performing the photoresist stripping process on the thin film encapsulation structure further includes: and forming a crack stop structure on the film packaging structure, wherein the crack stop structure is arranged on the insulating film of the second light-transmitting area.
In order to make the aforementioned and other aspects of the present disclosure more comprehensible, preferred embodiments accompanied with figures are described in detail below:
drawings
FIG. 1 is a schematic diagram of an OLED panel according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a first embodiment of a cross-sectional structure of the OLED panel shown in FIG. 1 along line A-A;
FIG. 3 is a flow chart illustrating a method for fabricating an OLED panel structure according to a first embodiment of the present disclosure; and
FIG. 4 is a schematic diagram of a second embodiment of the cross-sectional structure of the OLED panel shown in the line A-A of FIG. 1.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present disclosure comprehensible, preferred embodiments accompanied with figures are described in detail below. Furthermore, directional phrases used in this disclosure, such as, for example, upper, lower, top, bottom, front, rear, left, right, inner, outer, lateral, peripheral, central, horizontal, lateral, vertical, longitudinal, axial, radial, uppermost or lowermost, etc., refer only to the orientation of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure.
In the drawings, elements having similar structures are denoted by the same reference numerals.
The present disclosure provides an OLED panel and a method for manufacturing the same, in which a cross-section difference and crack stop structure formed on a thin film encapsulation structure can prevent a crack from extending toward an effective encapsulation area of the thin film encapsulation structure when an encapsulation layer on an insulating film is evaporated or removed by laser etching or cutting, so as to improve reliability of a terminal product.
Fig. 1 and 2 are schematic views of an OLED panel 100 according to the present disclosure. Wherein the OLED panel 100 includes: an array substrate 110 and a thin film encapsulation structure 120.
The array substrate 110 defines a first transparent region 112 and an effective display region 114 surrounding the first transparent region 112. The thin film encapsulation structure 120 is disposed on the upper side of the array substrate 110, and the thin film encapsulation structure 120 sequentially includes an insulating film 121, a first inorganic encapsulation layer 122, an organic encapsulation layer 123, and a second inorganic encapsulation layer 124 from bottom to top.
The thin film encapsulation structure 120 defines a second transparent region 125 and an effective encapsulation region 126 surrounding the second transparent region 125, wherein the second transparent region 125 is correspondingly disposed above the first transparent region 112 of the array substrate 110. The thin film encapsulation structure 120 further includes a dam bank structure 127(dam bank), wherein the dam bank structure 127 is disposed on the first inorganic encapsulation layer 122 of the active encapsulation area 126 and is adjacent to the second light-transmitting area 125.
In the embodiment shown in fig. 1 and fig. 2, the OLED panel 100 of the present disclosure achieves the design objectives of a full screen and a narrow frame by disposing the under-screen camera 200 or the sensor below the second light-transmitting region 125.
Wherein, as shown in the first embodiment of fig. 2, the second light-transmitting area 125 of the thin film encapsulation structure 120 only has the insulating film 121 and the second inorganic encapsulation layer 124, or, as shown in the second embodiment of fig. 4, the second light-transmitting area 125 of the thin film encapsulation structure 120 only has the insulating film 121.
It should be noted that the dam structure 127 is configured to block the flow of the organic encapsulation layer 123 on the first inorganic encapsulation layer 122 when the organic encapsulation layer 123 is formed by Inkjet Printing (Inkjet Printing).
Referring to fig. 2 again, the cross-sectional difference 128 is formed at the intersection of the second light-transmitting region 125 and the effective encapsulation region 126 of the thin film encapsulation structure 120. In this way, when the second inorganic encapsulation layer 124 is deposited on the insulating film 121 or the encapsulation layers such as the first inorganic encapsulation layer 122, the organic encapsulation layer 123, and the second inorganic encapsulation layer 124 on the insulating film 121 are removed by laser etching or cutting, the cracks generated therein are limited by the section difference 128, so that the cracks do not extend toward the effective encapsulation area 126 of the film encapsulation structure 120, thereby improving the reliability of the end product.
In the preferred embodiment of the present disclosure, a heightened lamination layer 129 may be additionally disposed above the section difference 128, and the arrangement of the heightened lamination layer 129 is utilized to increase the section difference between the section difference 128 and the second light-transmitting region 125, so as to further enhance the barrier effect on the cracks.
In the embodiment disclosed in fig. 2-4, the thin film encapsulation structure 120 further has a crack stop structure 130(crack stop structure). The crack stop structure 130 is disposed on the insulating film 121 of the second light-transmitting area 125, and also has an effect of stopping the crack from extending from the second light-transmitting area 125 toward the effective encapsulation area 126.
The present disclosure also provides a method for fabricating an OLED panel. As shown in fig. 3, the method for manufacturing the OLED panel 100 includes: step S1: providing an array substrate 110 and a thin film encapsulation structure 120, wherein the thin film encapsulation structure 120 is disposed on the upper side of the array substrate 110, the array substrate 110 defines a first light-transmitting region 112 and an effective display region 114 surrounding the first light-transmitting region 112, and the thin film encapsulation structure 120 sequentially includes, from bottom to top, an insulating film 121, a first inorganic encapsulation layer 122, an organic encapsulation layer 123, and a second inorganic encapsulation layer 124; step S2: performing a photoresist Coating (PR Coating) process on the thin film encapsulation structure 120; step S3: performing an Exposure and development (Exposure & development) process on the thin film encapsulation structure 120; step S4: performing an Etching (Etching) process on the thin film encapsulation structure 120; and step S5: a photoresist Stripping (PR striping) process is performed on the thin film package structure 120 to form a second light-transmitting region 125 defined by the thin film package structure 120 and an effective package region 126 surrounding the second light-transmitting region 125.
The second transparent region 125 of the thin film encapsulation structure 120 is correspondingly disposed above the first transparent region 112 of the array substrate 110.
In the present disclosure, when the thin film encapsulation structure 120 is first formed by removing the first inorganic encapsulation layer 122 and the organic encapsulation layer 123 by laser etching or cutting, and then forming the second inorganic encapsulation layer 124 by evaporation, as shown in the first embodiment of fig. 2, the second transparent region 125 of the thin film encapsulation structure 120 will only have the insulating film 121 and the second inorganic encapsulation layer 124.
On the other hand, if additional exposure/development processes and etching processes are performed after the thin film encapsulation structure 120 is encapsulated (i.e., the first inorganic encapsulation layer 122, the organic encapsulation layer 123 and the second inorganic encapsulation layer 124 are formed on the insulating film 121), the second transparent region 125 of the thin film encapsulation structure 120 only has the insulating film 121, as shown in the second embodiment of fig. 4.
The step S5 of performing the photoresist stripping process on the thin film encapsulation structure 120 further includes: a profile difference 128 is formed at the intersection of the second transparent region 125 and the active encapsulation region 126. In this way, when the second inorganic encapsulation layer 124 is deposited on the insulating film 121 or the encapsulation layers such as the first inorganic encapsulation layer 122, the organic encapsulation layer 123, and the second inorganic encapsulation layer 124 on the insulating film 121 are removed by laser etching or cutting, the generated cracks are limited by the section difference 128, so that the cracks do not extend towards the effective encapsulation area 126 of the film encapsulation structure 120 any more, thereby improving the reliability of the end product.
In addition, a high-lamination layer 129 may be additionally disposed above the profile difference 128 to increase the profile difference between the profile difference 128 and the second light-transmitting region 125, so as to further enhance the effect of blocking the cracks.
The step S5 of performing the photoresist stripping process on the thin film encapsulation structure 120 further includes: a crack stop structure 130 is formed on the thin film encapsulation structure 120, and the crack stop structure 130 is disposed on the insulating film 121 of the second light-transmitting area 125. As such, the crack stop structure 130 will also have the effect of blocking the crack from extending from the second transparent region 125 toward the active package region 126.
In the present disclosure, since the second transparent area 125 of the film package structure 120 is thinned, when the package layers originally disposed on the second transparent area 125 corresponding to the under-screen camera 200 are removed, the transmittance of the film package structure 120 above the under-screen camera 200 can be effectively improved, so as to improve the image capturing effect of the under-screen camera 200.
On the other hand, by the arrangement of the section difference 128, the heightened stacking layer 129 and the crack stop structure 130, when the package layer is to be removed by laser etching or cutting in the subsequent steps, the cracks generated therefrom will be blocked when extending to the crack stop structure 130 or to the section difference 128 and the heightened stacking layer 129, so that the cracks will not extend towards the effective package region 126, thereby improving the reliability of the end product.
Although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others skilled in the art based upon a reading and understanding of this specification and the annexed drawings. The present disclosure includes all such modifications and alterations, and is limited only by the scope of the appended claims. In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the specification. In addition, while a particular feature of the specification may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for a given or particular application. Furthermore, to the extent that the terms "includes," has, "" contains, "or variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising.
The foregoing is merely a preferred embodiment of the present disclosure, and it should be noted that modifications and refinements may be made by those skilled in the art without departing from the principle of the present disclosure, and these modifications and refinements should also be construed as the protection scope of the present disclosure.
Claims (8)
1. An OLED panel, comprising:
the array substrate defines a first light-transmitting area and an effective display area annularly arranged in the first light-transmitting area; and
the thin film packaging structure is arranged on the upper side of the array substrate and sequentially comprises an insulating thin film, a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer from bottom to top;
the thin film packaging structure defines a second light-transmitting area and is annularly arranged in an effective packaging area of the second light-transmitting area, the second light-transmitting area is correspondingly arranged above the first light-transmitting area of the array substrate, the thin film packaging structure further comprises a dam bank structure, the dam bank structure is arranged on the first inorganic packaging layer of the effective packaging area and is adjacent to the second light-transmitting area, and the thin film packaging structure is arranged in the second light-transmitting area and the joint of the effective packaging area to form a section difference.
2. The OLED panel of claim 1, wherein the second light-transmitting region of the thin film encapsulation structure has only the insulating film and the second inorganic encapsulation layer thereon or only the insulating film thereon.
3. The OLED panel of claim 1, wherein a superelevation layer is disposed over the profile difference.
4. The OLED panel of claim 3, wherein the thin film encapsulation structure has a crack stop structure disposed on the insulating film in the second light transmissive region.
5. The manufacturing method of the OLED panel is characterized by comprising the following steps of:
providing an array substrate and a thin film packaging structure, wherein the thin film packaging structure is arranged on the upper side of the array substrate, the array substrate defines a first light-transmitting area and an effective display area which is annularly arranged in the first light-transmitting area, and the thin film packaging structure sequentially comprises an insulating film, a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer from bottom to top;
carrying out a photoresist coating procedure on the thin film packaging structure;
carrying out exposure and development procedures on the thin film packaging structure;
etching the thin film packaging structure; and
performing a photoresist stripping procedure on the thin film packaging structure to form a second light-transmitting area defined by the thin film packaging structure and an effective packaging area annularly arranged in the second light-transmitting area;
the second light-transmitting area of the thin film packaging structure is correspondingly arranged above the first light-transmitting area of the array substrate;
wherein the step of removing the photoresist on the thin film package further comprises: and forming a section difference at the joint of the second light-transmitting area and the effective packaging area.
6. The method of claim 5, wherein the second light-transmitting region of the thin film encapsulation structure has only the insulating film and the second inorganic encapsulation layer thereon or only the insulating film thereon.
7. The method of claim 5, wherein a super-stack layer is disposed over the profile difference.
8. The method of claim 7, wherein the performing a photoresist stripping process on the thin film encapsulation structure further comprises: and forming a crack stop structure on the film packaging structure, wherein the crack stop structure is arranged on the insulating film of the second light-transmitting area.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911319591.8A CN111029483B (en) | 2019-12-19 | 2019-12-19 | OLED panel and manufacturing method thereof |
| PCT/CN2020/082751 WO2021120444A1 (en) | 2019-12-19 | 2020-04-01 | Oled panel and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911319591.8A CN111029483B (en) | 2019-12-19 | 2019-12-19 | OLED panel and manufacturing method thereof |
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| CN111029483A CN111029483A (en) | 2020-04-17 |
| CN111029483B true CN111029483B (en) | 2021-03-16 |
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| CN201911319591.8A Active CN111029483B (en) | 2019-12-19 | 2019-12-19 | OLED panel and manufacturing method thereof |
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| WO (1) | WO2021120444A1 (en) |
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| WO2022182123A1 (en) * | 2021-02-23 | 2022-09-01 | 삼성전자 주식회사 | Electronic device including optical sensor embedded in display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102031648B1 (en) * | 2013-04-18 | 2019-10-15 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
| CN207441754U (en) * | 2017-11-30 | 2018-06-01 | 京东方科技集团股份有限公司 | A kind of OLED display panel, OLED display |
| CN108416280B (en) * | 2018-02-26 | 2021-09-17 | 厦门天马微电子有限公司 | Display module and display device |
| CN208142229U (en) * | 2018-05-11 | 2018-11-23 | 昆山国显光电有限公司 | Thin-film packing structure, display screen and display device |
| CN108428807A (en) * | 2018-05-14 | 2018-08-21 | 云谷（固安）科技有限公司 | Thin-film packing structure and display screen |
| CN109003998A (en) * | 2018-06-25 | 2018-12-14 | 云谷（固安）科技有限公司 | A kind of flexible display panels and flexible display apparatus |
| CN109860266A (en) * | 2019-03-12 | 2019-06-07 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and display device |
| CN110112306A (en) * | 2019-04-09 | 2019-08-09 | 深圳市华星光电技术有限公司 | A kind of display panel and display device |
| CN110196656B (en) * | 2019-05-16 | 2023-01-20 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN110085650B (en) * | 2019-05-24 | 2021-07-06 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN110165083A (en) * | 2019-05-31 | 2019-08-23 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel |
| CN110137381B (en) * | 2019-06-11 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | OLED display panel |
| CN110350104B (en) * | 2019-07-04 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display panel and electronic device |
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| CN111029483A (en) | 2020-04-17 |
| WO2021120444A1 (en) | 2021-06-24 |
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