CN111029324A - Three-dimensional microwave module circuit structure and preparation method thereof - Google Patents
Three-dimensional microwave module circuit structure and preparation method thereof Download PDFInfo
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- CN111029324A CN111029324A CN201911155007.XA CN201911155007A CN111029324A CN 111029324 A CN111029324 A CN 111029324A CN 201911155007 A CN201911155007 A CN 201911155007A CN 111029324 A CN111029324 A CN 111029324A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
The invention provides a three-dimensional microwave module circuit structure and a preparation method thereof, belonging to the field of microelectronic packaging, and comprising a lower substrate, a lower circuit element, a metal shell, an upper substrate and an upper circuit element, wherein the upper substrate is connected with the lower substrate through a first solder ball, and a second solder ball is arranged on the lower substrate; the upper substrate is provided with a first via hole, a first conductive component is arranged in the first via hole, the lower substrate is provided with a second via hole, a second conductive component is arranged in the second via hole, the upper circuit element is in conductive connection with the first solder ball through the first conductive component, the first solder ball and the lower circuit element are in conductive connection with the second conductive component respectively, and the second conductive component is in conductive connection with the second solder ball. The three-dimensional microwave module circuit structure and the preparation method thereof provided by the invention have the advantages that the substrate and the package are integrated, the plane size of the circuit structure is small, the signal path is short, and the grounding parasitic effect of the upper layer circuit substrate is effectively reduced.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging, and particularly relates to a three-dimensional microwave module circuit structure and a preparation method for preparing the same.
Background
With the rapid development of modern communication and radar system technologies, the demand for miniaturized, low-cost, and highly reliable microwave circuits is pressing. The adoption of the stacking integration technology and the layered placement of circuit components on different circuit substrates is one of the important technical approaches for realizing the miniaturization of module circuits.
At present, a sandwich type bonding structure is generally formed by adding a metal aluminum frame in the middle of a substrate, and vertical signal interconnection is realized by using an insulator or bonding wire bonding to realize stacking of microwave circuit substrates, but the stacking structure has low applicable frequency.
Disclosure of Invention
The invention aims to provide a three-dimensional microwave module circuit structure, which aims to solve the technical problem that the application frequency of a sandwich type bonding structure formed by a metal aluminum frame mode in the prior art is low.
In order to achieve the purpose, the invention adopts the technical scheme that: there is provided a three-dimensional microwave module circuit structure including: the circuit board comprises a lower substrate, a lower circuit element arranged on the upper surface of the lower substrate, a metal shell, at least one upper substrate and an upper circuit element, wherein the metal shell is arranged on the upper surface of the lower substrate and matched with the lower substrate to form a containing cavity; the upper substrate is provided with a first via hole, a first conductive member is arranged in the first via hole, a second via hole is arranged on the lower substrate, a second conductive member is arranged in the second via hole, the upper circuit element is in conductive connection with the first solder ball through the first conductive member, the first solder ball is in conductive connection with the lower circuit element respectively, and the second conductive member is in conductive connection with the second solder ball.
As another embodiment of the present application, the metal housing includes a metal enclosure hermetically connected to the periphery of the upper surface of the lower substrate, and a metal cover plate hermetically disposed on the upper end surface of the metal enclosure.
As another embodiment of the present application, the first conductive member is a first metal conductive core filled in the first via hole, and the second conductive structure is a second metal conductive core filled in the second via hole.
As another embodiment of the present application, the first metallic conductive core and the second metallic conductive core are both pure copper members.
As another embodiment of the present application, when the upper substrate is provided with a plurality of upper substrates, the plurality of upper substrates are stacked and distributed along the vertical direction, adjacent upper substrates are connected by the first solder balls, and adjacent first conductive members on the upper substrates are conductively connected by the first solder balls.
As another embodiment of the present application, the first solder balls are distributed in an array with a predetermined shape, and a first dummy metal cavity is enclosed between the ground layer of the upper substrate and the first solder balls.
As another embodiment of the present application, the first solder balls are distributed in an array of a predetermined shape, and a second dummy metal cavity is formed by enclosing the ground layer of the upper substrate, the ground layer of the lower substrate, and the first solder balls.
As another embodiment of the present application, the upper circuit element includes an upper chip, the lower circuit element includes a lower chip, and the upper chip and the lower chip are both bare chips.
The three-dimensional microwave module circuit structure provided by the invention has the beneficial effects that: compared with the prior art, the three-dimensional microwave module circuit structure uses the lower substrate as the packaging bottom plate, the substrate and the packaging are integrated, the upper substrate is stacked in the containing cavity, the plane size of the circuit structure is obviously reduced, the upper substrate and the lower substrate are connected through the first welding balls, the second welding balls are arranged on the lower surface of the lower substrate, and the first conductive member, the first welding balls, the second conductive member and the second welding balls enable the upper substrate, the lower substrate and an external circuit to be vertically interconnected, so that the signal path is short, and the grounding parasitic effect of the upper circuit substrate is effectively reduced.
The invention also provides a preparation method of the three-dimensional microwave module circuit structure, which comprises the following steps:
assembling a lower circuit element on an upper surface of a lower substrate;
implanting a first solder ball on the lower surface of the upper substrate;
assembling an upper circuit element on an upper surface of an upper substrate;
welding the first welding balls implanted on the upper layer substrate on the lower layer substrate;
covering a metal shell on the upper surface of the lower substrate and connecting the metal shell with the lower substrate in a sealing manner;
and implanting the second solder balls on the lower surface of the lower substrate.
As another embodiment of the present application, the implanting of the first solder balls on the lower surface of the upper substrate; soldering the first solder balls implanted on the upper substrate to the lower substrate specifically includes:
acquiring a target stacking interval and a primary selection process parameter between an upper substrate and a lower substrate, wherein the target stacking interval is a preset interval between the lower surface of the upper substrate and the upper surface of the lower substrate, and the primary selection process parameter is at least one process parameter preset in the stacking process;
determining an adjusting process parameter according to the target stacking interval and the primary selection process parameter, wherein the adjusting process parameter is used for influencing the height of the first solder ball welded between the upper substrate and the lower substrate;
implanting the first solder balls on the bonding pads on the lower surface of the upper substrate based on the primary selection process parameters and the adjustment process parameters;
and welding the first solder balls on the bonding pads on the lower surface of the upper substrate on the bonding pads on the upper surface of the lower substrate by reflow soldering.
The preparation method of the three-dimensional microwave module circuit structure provided by the invention has the beneficial effects that: compared with the prior art, the preparation method of the invention uses the lower substrate as the packaging bottom plate, and the first conductive member, the first solder ball, the second conductive member and the second solder ball enable the upper substrate, the lower substrate and the external circuit to realize vertical interconnection of signals, the signal path is short, the parasitic parameter is small, the manufactured circuit structure is suitable for high-frequency signal transmission, the preparation process is simple, and the manufacturing cost can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of an internal structure of a three-dimensional microwave module circuit structure according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing a three-dimensional microwave module circuit structure according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-a lower substrate; 2-a metal housing; 201-metal fence; 202-a metal cover plate; 3-an upper substrate; 4-first solder balls; 5-second solder balls; 6-a first via; 7-a second via; 8-a first metallic conductive core; 9-a second metallic conductive core; 10-upper chip; 11-lower chip; 12-a third solder ball; 13-flip chip device; 14-chip resistance-capacitance element; 15-shell solder; 16-bonding wire
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 2, a three-dimensional microwave module circuit structure according to the present invention will now be described. The three-dimensional microwave module circuit structure comprises a lower substrate 1, a lower circuit element arranged on the upper surface of the lower substrate 1, a metal shell 2 which is arranged on the upper surface of the lower substrate 1 in a sealing cover and is matched with the lower substrate 1 to form an accommodating cavity, at least one upper substrate 3 arranged in the accommodating cavity and the upper circuit element arranged on the upper surface of the upper substrate 3, wherein the upper substrate 3 positioned at the bottom is connected with the lower substrate 1 through a first welding ball 4, and a second welding ball 5 is arranged on the lower surface of the lower substrate 1; the upper substrate 3 is provided with a first via hole 6, the first via hole 6 is internally provided with a first conductive member, the lower substrate 1 is provided with a second via hole 7, the second via hole 7 is internally provided with a second conductive member, the upper circuit element is in conductive connection with the first solder ball 4 through the first conductive member, the first solder ball 4 and the lower circuit element are respectively in conductive connection with the second conductive member, and the second conductive member is in conductive connection with the second solder ball 5.
The upper circuit element is in conductive connection with a first conductive component inside the first via hole 6 through a conductive structure arranged on the upper surface of the upper substrate 3, the first conductive component is in conductive connection with a first solder ball 4 through a conductive structure arranged on the lower surface of the upper substrate 3, the first solder ball 4 is in conductive connection with a second conductive component in the second via hole 7 through a conductive structure arranged on the upper surface of the lower substrate 1, and the second conductive component is in conductive connection with a second solder ball 5, so that the three-dimensional microwave module circuit structure is grounded.
The second solder balls 5 form a ball grid array structure on the lower substrate 1, and the lower substrate 1 is connected with an external circuit main body structure through the second solder balls 5 to serve as an I/O interface, so that the requirements of structure assembly and electrical performance can be met. The first via hole 6 and the second via hole 7 have both a signal transmission function and a grounding function.
Compared with the prior art, the three-dimensional microwave module circuit structure provided by the invention uses the lower substrate 1 as a packaging bottom plate, the substrate and the packaging are integrated, the upper substrate 3 is stacked in the accommodating cavity, the plane size of the circuit structure is obviously reduced, the upper substrate 3 and the lower substrate 1 are connected through the first solder balls 4, the second solder balls 5 are arranged on the lower surface of the lower substrate 1, and the first conductive members, the first solder balls 4, the second conductive members and the second solder balls 5 enable the upper substrate 3, the lower substrate 1 and an external circuit to realize vertical signal interconnection, so that the signal path is short, the parasitic parameters are small, the three-dimensional microwave module circuit structure is suitable for high-frequency signal transmission, and the grounding parasitic effect of the upper circuit substrate is effectively reduced.
Referring to fig. 1 and 2, in order to facilitate assembly, the metal housing 2 includes a metal fence 201 hermetically connected to the periphery of the upper surface of the lower substrate 1 and a metal cover plate 202 hermetically disposed on the upper end surface of the metal fence 201.
Referring to fig. 1 and fig. 2, as a specific embodiment of the three-dimensional microwave module circuit structure provided in the present invention, a shell solder is disposed between the metal fence 201 and the lower substrate 1, and the metal fence is hermetically connected to the lower substrate 1 by soldering, wherein the soldering may be reflow soldering; the metal enclosing wall 5 and the metal cover plate 6 are sealed by welding, and the welding mode can be parallel seam welding or laser welding. The whole packaging structure has good sealing performance and can realize watertight packaging.
Referring to fig. 1 and 2, as an embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the first conductive member is a first metal conductive core 8 filled in the first via hole 6, and the second conductive member is a second metal conductive core 9 filled in the second via hole 7.
The metal conductive core is a conductive core material with the main metal components reaching the preset purity, and is arranged in the first via hole 6 and the second via hole 7 in a filling mode, so that the conductive cross-sectional area is large, and the resistance is small, and therefore, the grounding via hole can be ensured to have smaller resistance and higher conductive performance, the parasitic effect of the upper substrate 3 and the lower substrate 1 in the using process is effectively reduced, and the whole circuit performance of the three-dimensional microwave module circuit structure is favorably improved.
In addition, by improving the conductive capability of the first via hole 6 and the second via hole 7, the circuit module on each layer of substrate can be designed relatively freely, and the grounding parasitic effect is no longer a main influence factor in the design process, thereby being beneficial to improving the overall circuit performance of the three-dimensional microwave module circuit structure.
Referring to fig. 1 and 2, as an embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the first metal conductive core 8 and the second metal conductive core 9 are both pure copper components.
The pure copper refers to the copper and silver content as the main component of 99.5-99.95%, the main impurity elements are phosphorus, bismuth, antimony, arsenic, iron, nickel, lead, tin, sulfur, zinc, oxygen and the like, and the density of the pure copper is 8-9g/cm3The melting point is 1083 ℃, the conductivity is excellent, the heat conductivity is good, the pure copper material is filled in the first via hole 6 and the second via hole 7 in an electroplating mode, and meanwhile, the heat dissipation capacity of the circuit substrate is improved by the via hole and the interconnection structure of the pure copper, so that the whole circuit structure can be subjected to low-loss transmission and processingA high frequency signal.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the upper substrate 3 is a multilayer wiring substrate, such as a thin film multilayer substrate, a multilayer Printed Circuit Board (PCB), and includes a plurality of stacked plate bodies, each of which is provided with a corresponding first via hole 6, so that any layer of pure copper can be filled in the first via hole 6. And each layer of plate body is provided with a circuit pattern, and the circuit pattern on each layer of plate body can be in conductive connection with the pure copper filler in the first via hole 6. The lower substrate 1 is a multilayer wiring substrate, such as a thin film multilayer substrate and a multilayer Printed Circuit Board (PCB), and comprises a plurality of stacked plates, each plate is provided with a corresponding second via hole 7, and any layer of pure copper can be filled in the second via holes 7. And each layer of plate body is provided with a circuit pattern, and the circuit pattern on each layer of plate body can be in conductive connection with the pure copper filler in the second through hole 7.
Referring to fig. 1 and 2, in order to improve the flexibility of the circuit structure design and make the circuit structure have more functions, a plurality of upper substrates 3 may be provided as an embodiment of the three-dimensional microwave module circuit structure provided in the present invention. When the upper substrate 3 is provided with a plurality of upper substrates 3, the plurality of upper substrates 3 are stacked and distributed along the up-down direction, adjacent upper substrates 3 are connected through the first solder balls 4, and the first conductive members on the adjacent upper substrates 3 are conductively connected through the first solder balls 4.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the first solder balls 4 are distributed in an array with a predetermined shape, and a first dummy metal cavity is formed between the ground layer of the adjacent upper substrate 3 and the first solder balls 4. The array of predetermined shapes may be a rectangular array, a circular array, or other regular or irregular array. The cavity is mainly used for realizing high-isolation suppression among signal link channels, adjusting the resonant frequency of the virtual metal cavity, avoiding the circuit performance deterioration caused by the resonance of microwave link signals in the virtual metal cavity, and realizing high-frequency signal transmission and processing under the condition of high integration.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the first solder balls 4 are distributed in an array with a predetermined shape, and a second dummy metal cavity is formed by enclosing the ground layer of the upper substrate 3, the ground layer of the lower substrate 1, and the first solder balls 4. The array of predetermined shapes may be a rectangular array, a circular array, or other regular or irregular array. The cavity is mainly used for realizing high-isolation suppression among signal link channels, adjusting the resonant frequency of the virtual metal cavity, avoiding the circuit performance deterioration caused by the resonance of microwave link signals in the virtual metal cavity, and realizing high-frequency signal transmission and processing under the condition of high integration.
Referring to fig. 1 and 2, as an embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the upper layer circuit element includes an upper chip 10, the lower layer circuit element includes a lower chip 11, and both the upper chip 10 and the lower chip 11 are bare chips. The upper chip 10 is electrically connected with the circuit structure on the upper substrate 3 through a bonding wire, and the lower chip 11 is electrically connected with the circuit structure on the lower substrate 1 through a bonding wire. Each layer of substrate realizes bare chip assembly through a micro-assembly process, namely flip-chip welding, bonding and bonding, and the packaging density of a unit area can be remarkably improved due to the fact that the packaging of a chip is omitted.
Whether the grounding of the circuit substrate is good or not depends on the arrangement density of the grounding via holes, in order to meet the conductive requirements of the grounding via holes as much as possible, the diameter of the traditional via holes is at least 150-200 micrometers, and the center distance of the holes is at least about 300 micrometers, so that the distribution density of the grounding via holes is very low, and the whole grounding performance of the circuit substrate is not favorably improved. As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, a plurality of first via holes 6 and a plurality of second via holes 7 are respectively provided, the inner diameters of the first via holes 6 and the second via holes 7 are both 75 μm to 85 μm, the center-to-center distance between adjacent first via holes 6 is at least 145 μm to 155 μm, and the center-to-center distance between adjacent second via holes 7 is at least 145 μm to 155 μm. Compare with traditional mode of distribution, the electric conductive property of single ground connection via hole itself is secure, and then enables ground connection via hole self size miniaturization, can improve the distribution density of ground connection via hole on circuit substrate, and the electric conductive property of first via hole 6 and second via hole 7 self promotes, and cooperation distribution density increases, can effectively promote the holistic ground connection performance of base plate.
Optionally, the inner diameters of the first via holes 6 and the second via holes 7 are both 80 μm, the center-to-center distance between adjacent first via holes 6 is 150 μm, and the center-to-center distance between adjacent second via holes 7 is 150 μm.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the first solder ball 4 includes a metal conductive spherical core and a solder layer coated on the periphery of the metal conductive spherical core. The solder layer is mainly melted and is connected with the welding pads on the upper substrate 3 and the lower substrate 1 in a welding way, and the metal conductive ball center is used for improving the conductivity of the solder ball.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the metal conductive spherical center is a pure copper member. The stacking support and the vertical interconnection of the circuit substrate are realized by adopting the pure copper sphere center with high conductivity and high heat conductivity, a good grounding path from the grounding layer of the upper layer circuit to the packaging shell is realized, and the grounding parasitic effect of the upper layer circuit substrate is effectively reduced.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, the metal conductive spherical center is a spherical member or a columnar member. The shape and the size of the metal conductive spherical center are selected according to the requirement of the distance between the adjacent circuit substrates, so that the board distance between the adjacent circuit substrates after welding is ensured to be a preset distance, the electromagnetic field resonance frequency of the virtual metal shielding cavity can be regulated and controlled, and the performance of the three-dimensional microwave module circuit structure is improved.
As a specific embodiment of the three-dimensional microwave module circuit structure provided by the present invention, in order to meet the functional requirements of the three-dimensional microwave module circuit structure, the lower layer circuit element further includes a third solder ball 12 connected to the lower layer substrate 1 and a flip chip device 13 connected to the third solder ball 12; the upper circuit element further includes a chip-type resistance-capacitance element 14 provided on the upper surface of the upper substrate 3.
Referring to fig. 2, the present invention further provides a method for manufacturing a three-dimensional microwave module circuit structure, where the method for manufacturing a three-dimensional microwave module circuit structure includes the following steps:
assembling a lower layer circuit element on the upper surface of the lower layer substrate 1;
implanting a first solder ball 4 on the lower surface of the upper substrate 3;
assembling upper layer circuit elements on the upper surface of the upper layer substrate 3;
welding a first solder ball 4 implanted on the upper substrate 3 on the lower substrate 1;
covering the metal shell 2 on the upper surface of the lower substrate 1 and hermetically connecting the metal shell with the lower substrate 1;
According to the preparation method of the three-dimensional microwave module circuit structure, the lower substrate 1 is used as the packaging bottom plate, the first conductive member, the first solder ball 4, the second conductive member and the second solder ball 5 enable the upper substrate, the lower substrate 1 and an external circuit to achieve vertical signal interconnection, the signal path is short, parasitic parameters are small, the manufactured circuit structure is suitable for high-frequency signal transmission, the preparation process is simple, and the manufacturing cost can be reduced.
As a specific embodiment of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, before assembling a lower circuit element on the upper surface of the lower substrate 1, the method further includes:
coating solder around the upper surface of the lower substrate 1;
soldering the metal fence 201 on the upper surface of the lower substrate 1 by solder using reflow soldering;
the solder may be a solder pad or a solder paste.
As a specific embodiment of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, the assembling of the lower circuit element on the upper surface of the lower substrate 1 specifically includes:
mounting the lower chip 11 and the flip chip 13 on the upper surface of the lower substrate 1 by means of bonding or soldering;
the lower chip 11 is electrically interconnected with the lower substrate 1 through bonding wires.
As a specific embodiment of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, the assembling of the upper circuit element on the upper surface of the upper substrate 3 specifically includes:
mounting the upper chip 10 on the upper surface of the upper substrate 3 by bonding;
the chip-type resistance-capacitance element 14 is attached to the upper surface of the upper substrate 3 through a reflow process;
the upper chip 10 is electrically interconnected with the upper substrate 3 by bonding wires.
As a specific implementation manner of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, the soldering the first solder ball 4 implanted on the upper substrate 3 on the lower substrate 1 specifically includes:
the first solder balls 4 implanted on the upper substrate 3 are soldered on the lower substrate 1 by a flip chip process.
As a specific implementation manner of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, after soldering the first solder balls 4 implanted on the upper substrate 3 on the lower substrate 1, the method further includes:
another upper substrate 3 in which the first solder balls 4 are implanted is bonded to the lower upper substrate 3 through a flip chip process.
As a specific embodiment of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, a first solder ball 4 is implanted on the lower surface of an upper substrate 3; the bonding of the first ball bond 4 implanted on the upper substrate 3 to the lower substrate 1 specifically includes:
acquiring a target stacking interval and a primary selection process parameter between an upper substrate 3 and a lower substrate 1, wherein the target stacking interval is a preset interval between the lower surface of the upper substrate 3 and the upper surface of the lower substrate 1, and the primary selection process parameter is at least one preset process parameter in the stacking process;
determining an adjusting process parameter according to the target stacking interval and the primary selection process parameter, wherein the adjusting process parameter is used for influencing the height of a first solder ball 4 welded between the upper-layer substrate 3 and the lower-layer substrate 1;
implanting a first solder ball 4 on a pad on the lower surface of the upper substrate 3 based on the primary selection process parameters and the adjustment process parameters;
the first solder balls 4 on the pads on the lower surface of the upper substrate 3 are soldered to the pads on the upper surface of the lower substrate 1 by reflow soldering.
The method is simple to operate, the target stacking distance can be conveniently adjusted by only acquiring each parameter in advance and correspondingly adjusting the parameters in operation, the resonant frequency of the virtual metal cavity is adjusted under the conditions of fixed component layout and first welding ball 4 array distribution, and the phenomenon that the microwave signal link resonates in the virtual metal cavity to cause circuit performance deterioration is prevented; in addition, the assembly requirements of components with different heights in the microwave circuit structure between circuit substrate layers can be met, and the space between the circuit substrates can be utilized more reasonably.
As a specific embodiment of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, the first solder balls 4 may be melting-slump solder balls. The melting-slump solder ball is a solder ball with the height of the solder ball falling in the reflow soldering process, the solder ball is mainly prepared from common solder such as Sn63Pb37, SAC305 and the like, the solder ball falls in the height direction under the action of the gravity of an upper substrate due to the melting of the solder in the soldering process, the diameter of the solder ball is increased in the transverse direction, and the height change ratio can reach 20% -40%.
On this basis, the step of soldering the first solder balls 4 on the pads on the lower surface of the upper substrate 3 to the pads on the upper surface of the lower substrate 1 by reflow soldering specifically includes:
coating solder paste on the pads on the upper surface of the lower substrate 1;
the first solder balls 4 on the pads on the lower surface of the upper substrate 3 are soldered to the pads on the lower surface of the lower substrate 1 by reflow soldering.
The primary selection process parameter is at least one of the stacking process parameters, the adjustment process parameter is one or more of the stacking process parameters except the primary selection process parameter, and the stacking process parameter comprises a bonding pad size parameter of an upper bonding pad and a lower bonding pad, a welding ball size parameter of a first welding ball 4, a coating amount parameter of the welding paste, a reflow soldering time parameter and a total weight parameter of the upper substrate.
The pad size parameter, the solder ball size parameter, the coating amount parameter and the reflow soldering time parameter all have an influence on the height of the first solder ball 4 after reflow soldering, and the specific principle is as follows:
1) the solder ball size parameter of the first solder ball 4 is typically the original size parameter of the first solder ball 4 not connected to the pad. Under the condition of the same slump height change ratio, the size of the solder ball is increased, and the stacking distance of the target after reflow soldering is increased; conversely, the target stack pitch decreases.
2) The size parameter of the welding pad determines the sectional area of the welding area of the first welding ball 4, under the condition of the same size parameter of the welding ball and the same substrate, the area of the welding pad is reduced, the sectional area of the welding area is reduced, and the height of the first welding ball 4 is inevitably increased after reflow welding because the volume of the welding ball is not changed, thereby achieving the purpose of adjusting the height between the substrate layers.
3) When the substrates are stacked, a preset amount of solder paste with the same composition as that of the first solder balls 4 is required to be dispensed or printed on the lower substrate in advance, the solder paste is used for providing the soldering flux required in the reflow process, and meanwhile, a certain volume of solder is supplemented to the solder balls, so that the more the solder paste is coated, the more the solder supplement is obtained by the first solder balls 4, the larger the volume (height and transverse diameter) of the first solder balls 4 after reflow is, and conversely, the less the solder paste is coated, the less the solder supplement is obtained by the first solder balls 4, and the smaller the volume (height and transverse diameter) of the solder balls after reflow is.
4) In the reflow soldering process, after the solder balls are melted, the surface tension of the solder balls and the gravity of the upper substrate 3 form a dynamic mechanical equilibrium state, and the conditions of the highest process temperature rise, the time above the liquidus line prolonged and the like can cause the integral retention time of the first solder balls 4 at high temperature to be prolonged. The strength of the solder ball is low in a high-temperature range of 0.5Ts-Ts (Ts represents the liquidus temperature of the solder ball), compression plasticity and creep deformation in the height direction are generated under the action of gravity of the upper substrate 3, the retention time is prolonged, and the compression plasticity and creep deformation amount (the deformation amount is related to the time) of the solder ball are increased, so that the height of the solder ball is reduced to a certain extent.
5) The heavier the total weight of the upper substrate is, the greater the pressure applied to the solder ball in soldering, and the greater the degree of compression plasticity and creep deformation in the height direction is generated, resulting in a reduction in the height of the final solder ball.
When the target stacking interval is adjusted, one of a pad size parameter, a solder ball size parameter, a coating amount parameter, a reflow soldering time parameter and an upper substrate total weight parameter can be independently adjusted to be an adjustment process parameter, and the remaining three parameters are preset primary selection process parameters; or selecting a plurality of parameters for comprehensive adjustment, wherein the plurality of parameters are adjustment process parameters, and the rest parameters are preset primary selection process parameters. According to the actual process flow, different parameters can be flexibly selected for adjustment, and then the height of the first solder ball 4 can be effectively controlled.
As a specific implementation manner of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, when the first solder balls 4 are non-slump solder balls, the size parameter of the solder balls is in direct proportion to the target stacking distance, the coating amount parameter is in direct proportion to the target stacking distance, and the selection of the initial selection process parameter and the adjustment process parameter may specifically be:
1) the primary selection process parameters comprise a welding pad size parameter, a coating amount parameter of the soldering paste and a reflow soldering time parameter, and the process parameters are adjusted to be the welding ball size parameter.
2) The primary selection process parameters comprise a bonding pad size parameter, a solder ball size parameter and a reflow soldering time parameter, and the process parameters are adjusted to be coating quantity parameters of the soldering paste.
3) The primary selection process parameters comprise a welding pad size parameter and a reflow soldering time parameter, and the adjustment process parameters are a coating amount parameter of the soldering paste and a welding ball size parameter.
When the first solder balls 4 are non-slump solder balls, the volume of the first solder balls 4 is not changed in the welding process, and the height of the solder balls is not influenced by adjusting the size parameters of the bonding pads and the reflow welding time parameters, so that the size parameters of the solder balls and the coating amount parameters of the solder paste can be determined, and the influence principle is similar to that of the melting slump solder balls. The method has the advantages of limited parameter selection range, less variables in the operation process and more convenient operation control.
As a specific implementation manner of the method for manufacturing a three-dimensional microwave module circuit structure provided by the present invention, the first solder ball 4 includes a ball center and a solder layer coated on an outer surface of the ball center, the solder paste includes a pasty substrate and a substrate solder dispersed in the substrate, a melting point of the solder layer is consistent with a melting point of the substrate solder, and the melting point of the ball center is higher than the melting point of the solder layer. In the reflow soldering process, the plating base solder is melted and soldered, but the pure metal balls or the plastic balls of the core are not melted, so that the height is kept unchanged to play a role in keeping a certain fixed height between the substrate layers.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. Three-dimensional microwave module circuit structure, its characterized in that: the circuit board comprises a lower substrate, a lower circuit element arranged on the upper surface of the lower substrate, a metal shell, at least one upper substrate and an upper circuit element, wherein the metal shell is arranged on the upper surface of the lower substrate and matched with the lower substrate to form a containing cavity; the upper substrate is provided with a first via hole, a first conductive member is arranged in the first via hole, a second via hole is arranged on the lower substrate, a second conductive member is arranged in the second via hole, the upper circuit element is in conductive connection with the first solder ball through the first conductive member, the first solder ball is in conductive connection with the lower circuit element respectively, and the second conductive member is in conductive connection with the second solder ball.
2. The three-dimensional microwave module circuit structure of claim 1, wherein: the metal shell comprises a metal enclosing wall which is connected to the periphery of the upper surface of the lower substrate in a sealing mode and a metal cover plate which is arranged on the upper end face of the metal enclosing wall in a sealing mode.
3. The three-dimensional microwave module circuit structure of claim 1, wherein: the first conductive member is a first metal conductive core filled in the first via hole, and the second conductive structure is a second metal conductive core filled in the second via hole.
4. A three-dimensional microwave modular circuit structure as defined in claim 3, wherein: the first metal conductive core and the second metal conductive core are both pure copper members.
5. The three-dimensional microwave module circuit structure of claim 1, wherein: when the upper substrate is provided with a plurality of substrates, the plurality of substrates are distributed in a stacked manner along the vertical direction, the adjacent substrates are connected through the first solder balls, and the first conductive members on the adjacent substrates are conductively connected through the first solder balls.
6. The three-dimensional microwave module circuit structure of claim 5, wherein: the first solder balls are distributed in an array in a preset shape, and a first virtual metal cavity is formed by the surrounding of the ground layer of the upper substrate and the first solder balls.
7. The three-dimensional microwave module circuit structure of claim 1, wherein: the first solder balls are distributed in an array in a preset shape, and a second virtual metal cavity is formed by enclosing the ground layer of the upper substrate, the ground layer of the lower substrate and the first solder balls.
8. The three-dimensional microwave module circuit structure of claim 1, wherein: the upper layer circuit element comprises an upper layer chip, the lower layer circuit element comprises a lower layer chip, and the upper layer chip and the lower layer chip are bare chips.
9. The preparation method of the three-dimensional microwave module circuit structure is characterized by comprising the following steps of:
assembling a lower circuit element on an upper surface of a lower substrate;
implanting a first solder ball on the lower surface of the upper substrate;
assembling an upper circuit element on an upper surface of an upper substrate;
welding the first welding balls implanted on the upper layer substrate on the lower layer substrate;
covering a metal shell on the upper surface of the lower substrate and connecting the metal shell with the lower substrate in a sealing manner;
and implanting the second solder balls on the lower surface of the lower substrate.
10. The method of claim 9, wherein the implanting of the first solder balls on the lower surface of the upper substrate; soldering the first solder balls implanted on the upper substrate to the lower substrate specifically includes:
acquiring a target stacking interval and a primary selection process parameter between an upper substrate and a lower substrate, wherein the target stacking interval is a preset interval between the lower surface of the upper substrate and the upper surface of the lower substrate, and the primary selection process parameter is at least one process parameter preset in the stacking process;
determining an adjusting process parameter according to the target stacking interval and the primary selection process parameter, wherein the adjusting process parameter is used for influencing the height of the first solder ball welded between the upper substrate and the lower substrate;
implanting the first solder balls on the bonding pads on the lower surface of the upper substrate based on the primary selection process parameters and the adjustment process parameters;
and welding the first solder balls on the bonding pads on the lower surface of the upper substrate on the bonding pads on the upper surface of the lower substrate by reflow soldering.
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Cited By (1)
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| CN112533358A (en) * | 2020-11-24 | 2021-03-19 | 中国电子科技集团公司第十三研究所 | High-frequency microwave multilayer circuit board and high-frequency microwave assembly |
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