KR101141762B1 - Copper-cored solder balls for micro-electronic packages and micro-electronic packages including the same - Google Patents
Copper-cored solder balls for micro-electronic packages and micro-electronic packages including the same Download PDFInfo
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- KR101141762B1 KR101141762B1 KR1020100111457A KR20100111457A KR101141762B1 KR 101141762 B1 KR101141762 B1 KR 101141762B1 KR 1020100111457 A KR1020100111457 A KR 1020100111457A KR 20100111457 A KR20100111457 A KR 20100111457A KR 101141762 B1 KR101141762 B1 KR 101141762B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
Description
The present invention relates to a lead-free solder ball of a copper core used in a semiconductor package and a semiconductor package including the same. More particularly, the present invention is applicable to all technical and scientific fields based on the bonding of solder balls. The present invention relates to a lead-free solder ball and a semiconductor package using the same, which can be used for all kinds of semiconductor packages based on interconnection of solder balls.
In Korea, the dependence of the semiconductor industry is very high and the development of small mobile devices such as mobile phones, laptops, PDAs, etc. has been rapidly developed for the last decade. Therefore, the stability and reliability of semiconductor chips in these electronic devices have emerged as important success factors as well as the electrical characteristics of electronic devices. Moreover, it is common practice that the solder joints (FIG. 1) present for the microelectronic interconnect of the semiconductor chip and the substrate show the most fragile form of breakdown. In particular, the solder joints of semiconductor packages have been found to be generally weak due to the reliability of lead-free solder, which has been widely used instead of the existing tin-lead solder for environmental reasons. Has been recognized as one of the most important issues.
1 is a diagram illustrating the structure and solder joint of a flip-chip ball grid array (FC-BGA) semiconductor package.
In addition, as modern vehicles become more advanced and more functions are applied to electronic systems, the demands of many technologies are increasing in the characteristics of semiconductor packages used in harsh conditions such as vehicles. Research is ongoing. Next-generation automotive semiconductor packages require miniaturization, low power consumption, and high reliability that can withstand high voltages and heat resistance.These next-generation packages are rapidly decreasing due to the miniaturization of semiconductor internal wiring, and thus the viewpoint of mechanical characteristics and reliability. This is a very disadvantageous situation. The solder balls and solder joints used in these packages are considered one of the most important materials from a mechanical / reliable point of view. In particular, vehicle semiconductors must be used in very harsh environments such as continuous vibration, high voltage and high temperature, and thus must possess various excellent reliability.
The present inventors have made intensive efforts to develop lead-free solder balls for semiconductor packages with high reliability. As a result, the solder balls made of copper cores are expected to be suitable for automotive semiconductors because of their excellent electrical and thermal properties. However, such a copper-based solder ball has a high possibility of being used in a special field such as a vehicle semiconductor package because of its excellent properties, but the systematic research on its mechanical and electrical properties is insignificant.
The present invention has been made to solve the above problems, the solder ball of the copper core to improve the reliability of the solder joints used in the interconnect (interconnect) of the semiconductor package, such as used in thermal, electrical, mechanical and harsh environments. Its purpose is to use it.
Another object of the present invention is to provide a high reliability lead-free solder ball applicable to a vehicle with harsh conditions.
Still another object of the present invention is to provide a semiconductor package including the lead-free solder ball and having excellent reliability.
The present invention is to achieve the above object, to provide a lead-free solder ball of a copper core comprising a core containing copper as a main component, and a plating layer containing tin and indium as a main component.
In addition, the composition ratio of tin and indium of the plating layer is characterized in that 50 to 99.99% by weight and 0.01 to 50.0% by weight, respectively.
In addition, the diameter of the core is characterized in that the range of 10 nm ~ 10 mm.
In addition, the thickness of the plating layer is characterized in that the range of 0.1 ~ 900 ㎛.
In addition, the core may be pure copper or a copper-based alloy, characterized in that the content is 10% by mass or more.
In addition, the copper alloy core may be used in which one or more of zinc, tin, lead, nickel, silver, palladium, antimony, aluminum, manganese, molybdenum and gold and copper are used as the alloy.
In addition, the present invention provides a semiconductor package including the lead-free solder ball.
According to the present invention, in order to improve the reliability of solder joints used in interconnects such as semiconductor packages, a solder ball of a copper core is provided, and a highly reliable lead-free solder ball and its lead-free solder ball, which are applicable to vehicles with particularly severe conditions. It can provide a highly reliable semiconductor package including.
1 is a diagram illustrating the structure and solder joints of a flip-chip ball grid array (FC-BGA) semiconductor package.
Figure 2 is a diagram illustrating a solder ball after the reflow progress.
Figure 3 is a mechanism for increasing the bump height using a copper core (Cu-core) or copper filler (Cu-pillar) to ensure the reliability of the package with a small pitch (pitch).
Figure 4 is a schematic diagram schematically showing the phenomenon of electro-migration (Electro-migration).
FIG. 5 is a graph showing that thermal life increases with increasing bump height. FIG.
FIG. 6 shows (a) 4.6 × 10 4 A / cm 2 current flow at 140 ° C., and the resistance is measured and plotted for each time. (B) 4.6 × 10 4 A / cm 2 current at 140 ° C. FIG. The temperature was measured for each time by flowing the density, and it can be seen that the temperature increased by about 40 ° C by Joule heating, and (c) the electro-migration sample was shown, and (d) in the sample of (c). And ⓑ show the progress of the electron transfer phenomenon of the sample over time.
Figure 7 is a schematic diagram showing that the ions are transferred to the electron wind phenomenon by transferring the momentum to the ions electrons.
8A and 8B are cross-sectional views of the solder balls of Comparative Example 1 and Example after attaching the reflow process to a substrate pad, respectively.
9A is a graph of the results of a normal-speed shear test.
9B is a graph of the results of a high-speed pull test.
10 shows various types of fracture cross sections using an optical microscope to analyze the failure mechanisms of Example and Comparative Example 1 after the progress of a high-speed pull test.
11 is a graph comparing the failure mode generation rate in Comparative Example 1 and Example.
12 is a graph comparing electron transfer resistance result values measured by flowing a current of 0.675 mA at 165 ° C. in solder joints of Examples and Comparative Examples.
13 is a graph of thermal life experiment results of Examples and Comparative Examples.
14 is a photographic image showing the vibration test for the solder joints of Examples and Comparative Examples.
The present invention relates to a lead-free solder ball of a copper core including a core containing copper as a main component and a plating layer containing tin and indium as a main component.
Hereinafter, with reference to the accompanying drawings, the present invention will be described in detail.
The lead-free solder ball of the copper core according to the present invention is composed of a core ball containing copper as a main component and a plating layer coated with an outer coating thereof.
The core is made of copper and may be made of an alloy with another metal. Examples of metals that can be alloyed with copper include, for example, metals such as zinc, tin, lead, nickel, silver, palladium, antimony, aluminum, manganese, molybdenum and gold, and in the field to which the present invention pertains. Any commercially available alloy metal can be used without limitation.
When the alloy of copper and another metal is used as a core metal, it is preferable to contain content of copper in 10 mass% or more. If the content of copper is lower than this, the improvement of electromigration resistance may be hindered to some extent, which may not be desirable. In addition, the core metal need not be one, and a small number of small core metals may be distributed in the solder plating layer.
The plating layer of the lead-free solder ball according to the present invention is composed mainly of tin and indium. In this case, the composition ratio of tin in the plating layer is in the range of 50 to 99.99% by weight, and the composition ratio of indium is preferably in the range of 0.01 to 50.0% by weight. The relatively high content of tin is not only superior in terms of price competitiveness, but also has properties similar to those of solder balls having a conventional composition, which is preferable.
The diameter of the core of the lead-free solder ball according to the invention can be used in various ranges, that is, in the range of 10 nm ~ 10 mm.
In addition, the thickness of the plating layer may vary with a thickness of 0.1 ~ 900 ㎛.
The lead-free solder ball (copper-cored ball) of the copper core according to the present invention is provided with a small copper ball inside the core, which is excellent in thermal and electrical properties, and thus a ball pitch even after reflow. The reliability of the liver is secured, and the ball height is increased.
2 is a diagram illustrating a solder ball after reflow is performed. Copper-cored solder balls can maintain a high solder ball height even after reflow, providing reliability benefits in small pitch or dense packages over conventional solder balls.
< Thermal life>
Thermal cycle failure is a phenomenon in which thermal stress occurs due to the difference in thermal expansion coefficient between periodic high and low temperatures, which eventually leads to breakdown, which is frequently used in semiconductor packages used in high temperature environments. It is a phenomenon that occurs. For this reason, good reliability against thermal cycle breakdown is indispensable in semiconductors. Previous studies have shown that the higher the bump / ball height, the longer the heat life. For the same reason, bump heights can be increased by using Cu balls or Cu pillars to increase thermal life.
FIG. 3 illustrates a mechanism of increasing bump height by using a copper core or a copper pillar to secure reliability of a package having a small pitch as in FIG. 2.
<Electro-migration, Thermal Life and Vibration Resistance>
In particular, semiconductor packages used in automobiles must have excellent resistance to various mechanical, electrical and thermal properties such as high temperature, thermal cycling, vibration, and electro-migration. It can have a long life without it. Therefore, the development and evaluation of solder joints of next-generation special semiconductor packages for vehicles, that is, the accurate measurement / measurement method of mechanical, electrical, and thermal properties are becoming more important. Moreover, as the necessity of lead-free semiconductor packages, which have been developed in recent years, the replacement of lead-free solder joints, which have superior reliability compared to the existing Sn-Pb solder joints, has been introduced. Development and evaluation have become one of the most important research areas in the semiconductor package field.
Automotive semiconductors can be used in extremely harsh environments such as continuous vibration, high voltages and high temperatures, and therefore must possess a variety of excellent reliability. Automotive semiconductor packages generate thermal stress periodically between high and low temperatures due to the use environment at high temperatures, and frequently occur due to thermal fatigue. In addition, one of the most common and fatal breakdowns in automotive semiconductor packages is electron transfer, which is the momentum transfer of metals by collisions of electrons and metal ions when large amounts of current flow through the conductor. The ions move and consequently the conductor metal breaks down.
4 is a schematic diagram schematically showing electro-migration.
As the size of semiconductor packages becomes smaller, the size of packages becomes smaller and the current density affecting solder joints becomes higher, which will become a more serious issue in the future. Currently, many studies for the mechanism and resistance of electron transfer are underway. . Electromigration is also frequently generated in lead-free solder made of SAC, the composition of the most commonly used solder joints. It is known that there are several causes, and the most representative cause of this is the driving force of the Cu element spreading into the solder ball of SAC with the movement of current to form the Cu 6 Sn 5 intermetallic compound (IMC). This is an interface-reaction driven electromigration failure which results in the destruction of Cu conductors. In order to reduce the breakdown caused by this phenomenon, it is necessary to reduce the amount of copper diffused into the solder ball, and it is known that it is effective to reduce the diffusion driving force by adding a small amount of copper or nickel element into the solder ball. Therefore, the present invention selects a solder ball of a copper core in which the entire inside of the solder ball is made of copper as a more effective method.
It can be ball-attached by coating a general solder of Sn-based composition through electroplating on a small copper ball, and the part contacting the pad surface is Sn-based solder ball. There is an advantage that the process of the package can be used as it is. In addition, since the copper core does not melt due to its high melting point in the reflow process, it is possible to secure reliability by maintaining a more uniform distance between balls than a general solder ball even in a narrow ball pitch package due to the miniaturization trend. The ball height can be kept high (FIG. 2). Higher ball heights improve thermal cycle life, so copper core solder balls will have better thermal fatigue resistance than conventional solder balls.
FIG. 5 shows that thermal life increases with increasing bump height as in the case of Cu-cored solder balls.
Hereinafter, the related experimental results regarding the bond strength and electron transfer, thermal fatigue, and vibration test are shown.
FIG. 6 shows (a) 4.6 × 10 4 A / cm 2 current flow at 140 ° C., and the resistance is measured and plotted for each time. (B) 4.6 × 10 4 A / cm 2 current at 140 ° C. FIG. The temperature was measured for each time by flowing the density, and it can be seen that the temperature increased by about 40 ° C by joule heating, and (c) the sample showed electro-migration, and (d) the sample in (c). And ⓑ show the progress of the electron transfer phenomenon of the sample over time.
<Electromigration (Electro-migration)>
Electron transfer refers to a phenomenon in which a large amount of current flows into a conductor, causing collisions between electrons and metal ions, leading to movement of metal ions through momentum transfer, resulting in destruction of the conductor metal (FIG. 4). . Although the mass of electrons is about 100,000 times smaller than ions, electron wind phenomenon occurs in which ions move through continuous momentum transfer (FIG. 7). Electromigration generally builds up atoms in the anode and voids in the cathode, which are first generated near the corners of the solder joints with small cross-sectional areas due to the current crowding effect. The vacancy grows later, eventually breaking the circuit (Fig. 6 (d)). Typical current densities at which electron transfer occurs in copper or aluminum interconnects are 10 6 to 10 7 A / cm 2, while solder joints used in IC chips (SnPb or SAC lead-free) are much lower than 10 4 A / cm. Electromigration occurs at about 2 degrees, and as the solder ball size and cross-sectional area become smaller due to the use in harsh environments such as automobiles and the miniaturization of semiconductor packages, the current density in the solder joint is reversed, resulting in the risk of destruction by electron movement. This increase is expected to be a more critical issue in the future.
Figure 7 shows that the electrons transfer the momentum to the ions to move the ions in the electron wind phenomenon.
In still another aspect, the present invention relates to a semiconductor package including the lead-free solder ball. A semiconductor package connected based on a lead-free solder ball having the above characteristics is excellent in reliability, and is particularly suitable for use in a vehicle / aviation semiconductor package.
Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention in more detail, it will be apparent to those skilled in the art that the scope of the present invention is not limited by these examples in accordance with the gist of the present invention. .
Example
Example One
The mechanical, electrical and thermal properties of the automotive semiconductor package were analyzed for copper core solder balls plated with a uniform thickness of 15 µm with a Sn-1.0In composition in a small copper ball with a diameter of 300 µm.
Comparative example One
The mechanical, electrical, and thermal properties of the automotive semiconductor package were analyzed for copper core solder balls plated with a uniform thickness of 15 µm with a Sn-3.0Ag composition in a small copper ball with a diameter of 300 µm.
Comparative example 2
Such as the total thickness of the copper core and the plating layer Sn-3.0Ag-0.5Cu (SAC 305, MK Electron, Korea) solder balls of 330㎛ diameter were analyzed for the mechanical, electrical, and thermal properties of automotive semiconductor packages.
Experimental Example
Solder ball Bonding strength
The bond strengths of the Examples and Comparative Examples were compared through a high-speed pull test (400 mm / s). Bond strength test was carried out after the reflow (reflow) to each other once attached to the solder ball on the substrate.
8 shows a cross section after the solder balls of Comparative Example 1 (a) and Example (b) are attached to a substrate pad through a reflow process. It can be seen that after the bonding of the solder balls, the interface between the solder ball of Example (Sn-1In) and the coating shows a smaller amount of pore than the interface between the solder ball and the coating of Comparative Example 1 (Sn-3.5Ag). It is generally known as one of the physical properties that can act advantageously in mechanical properties.
Comparative example through normal-speed shear test (500 μm / s) and high-speed pull test (400 mm / s) in electrolytic Ni / Au surface finish And the bonding strength of the Example was measured, and the result graph is shown in FIG. 9A is a result graph of the normal-speed shear test, and FIG. 9B is a result graph of the high-speed pull test. As can be seen in the graph, the bond strength experiments showed that the examples showed higher bond strengths.
10 shows various types of fracture cross sections using an optical microscope to analyze the failure mechanisms of Example and Comparative Example 1 after the progress of the high-speed pull test.
The failure modes can be divided into four types and can be analyzed. The definitions of each failure mode are as follows.
(a) Inter metallic compound (IMC) failure mode: It is a failure mode that occurs frequently in solder joint of general SAC composition.
(b) Interface failure mode: A failure mode that occurs at the interface between the copper core and the plating layer.
(c) Semi-plating failure mode: Intermediate between the interface failure mode and the plating failure mode, in which the middle part of the plating layer is destroyed more than 30% in the interface failure mode.
(d) Plating failure mode: This is the case where destruction occurs in the plating layer.
Comparative Examples 1 and 2 having two kinds of plating layers show different failure modes. In Fig. 11, the failure modes in Comparative Example 1 and Example were divided into the four types of modes, and the breakage generation rates were compared.
Unlike Comparative Example 1, in which the interface fracture is the main failure mode, the Example shows an IMC fracture mode of about 20%. It is assumed that the In component contributed to the improvement of adhesion and wettability, and may be related to the density of the interface pore. In the case of the embodiment plated with Sn-1.0In, the bonding between the copper core and the plating layer was improved and the pore density was relatively smaller than that of Comparative Example 1, so that the bonding strength between the plating layer and the copper core was higher, and thus It can be inferred that the ratio of the destruction modes of is relatively small.
Electron movement
In this experiment, the electron transfer experiment conditions were measured under the harsh conditions of 165 ℃ flowing a current of 0.675 mA current to measure the life time (life time) of each sample. Experimental results showed that the copper core solder ball (Example) showed improved electromigration resistance compared to the SAC305 composition (Comparative Example 1), and in particular, the example plated with Sn-1.0In was three times higher than SAC305 (Comparative Example 1). Resistance was shown (FIG. 12). This is thought to be due to the lowering of the driving force for the copper conductor to diffuse into the inside by the small copper balls inside, and in the embodiment, the resistance of the electromigration is considered to be higher due to the effect of In.
FIG. 12 shows the results of the electromigration resistance measured by flowing a current of 0.675 mA at 165 ° C. in the solder joints of Examples and Comparative Examples.
Heat life ( Thermal life )
Thermal life experiment was conducted at a temperature range of -55 to + 150 ° C. for 15 minutes per cycle, and as a result, the copper core balls (Examples and Comparative Examples 1) were somewhat higher in thermal fatigue than Comparative Example 2. thermal fatigue) resistance can be seen (Fig. 13). This result is judged because the height of the solder joint can be kept constant even after reflow by the internal copper core as described above (FIG. 5).
vibration( Vibration Resistance
Vibration failure is a phenomenon in which destruction occurs due to continuous vibration in a special environment such as a vehicle semiconductor package. Vibration test experimental conditions are CV-700 for 6 hours for 20 hours at 2000 g (11 minutes), 2 hours for each of x, y, and z axes at 4.3 g, which is the condition of a paper that reports the 10-year life span of automotive semiconductor packages. Proceed with -080 equipment (FIG. 14). Experimental results showed no vibrational failure in all samples. These results indicate that the vibration resistance of the copper core solder ball has sufficient reliability to be used in a vehicle semiconductor package.
14 is a photograph showing the vibration test of the solder joints of Examples and Comparative Examples.
result
Copper core solder balls, which are considered suitable for automotive packages, are compared with lead-free solder in conventional SAC305 compositions and analyzed for various mechanical, electrical and thermal properties, resulting in joint strength, electro-migration and thermal fatigue. All studies, such as thermal fatigue and vibration resistance, showed similar or relatively good resistance. In particular, it was observed that the mechanical, electrical, and thermal properties of the solder ball of the Example plated with Sn-1.0In were excellent. Therefore, the copper core solder ball has suitable characteristics to be used in a vehicle / aviation semiconductor package, which is a field of high value-added semiconductor package, and is expected to contribute to improving the reliability of electric and electronic components in the domestic automotive / aviation industry.
Claims (7)
The composition ratio of tin and indium of the plating layer is 50 ~ 99.99% by weight and 0.01 ~ 50.0% by weight, respectively, lead-free solder ball of the copper core.
Lead-free solder ball of the copper core, characterized in that the diameter of the core ranges from 10 nm to 10 mm.
The thickness of the plating layer is lead-free solder ball of the copper core, characterized in that the range of 0.1 ~ 900 ㎛.
The core is a lead-free solder ball of the copper core, characterized in that the copper content of 10% by mass or more.
The core is lead-free solder ball of the copper core, characterized in that the alloy is made of one or more of zinc, tin, lead, nickel, silver, palladium, antimony, aluminum, manganese, molybdenum and gold and copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100111457A KR101141762B1 (en) | 2010-11-10 | 2010-11-10 | Copper-cored solder balls for micro-electronic packages and micro-electronic packages including the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100111457A KR101141762B1 (en) | 2010-11-10 | 2010-11-10 | Copper-cored solder balls for micro-electronic packages and micro-electronic packages including the same |
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| KR101141762B1 true KR101141762B1 (en) | 2012-05-03 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029324A (en) * | 2019-11-22 | 2020-04-17 | 中国电子科技集团公司第十三研究所 | Three-dimensional microwave module circuit structure and preparation method thereof |
| KR20210086519A (en) | 2019-12-31 | 2021-07-08 | 덕산하이메탈(주) | Solder ball and the manufacturing method thereof |
| KR20210086520A (en) | 2019-12-31 | 2021-07-08 | 덕산하이메탈(주) | Low radiation solder ball and manufacturing method thereof |
| KR20230060778A (en) | 2021-10-28 | 2023-05-08 | 신종천 | Test apparatus |
| KR20240059252A (en) | 2022-10-27 | 2024-05-07 | 단국대학교 천안캠퍼스 산학협력단 | Alloy typed solder ball having high electrical conductivity and Manufacturing method thereof |
| KR20240146458A (en) | 2023-03-29 | 2024-10-08 | 단국대학교 천안캠퍼스 산학협력단 | Sheath-core typed alloy metal solder ball and Manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007075856A (en) | 2005-09-14 | 2007-03-29 | Nippon Steel Materials Co Ltd | Cu CORE BALL |
-
2010
- 2010-11-10 KR KR1020100111457A patent/KR101141762B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007075856A (en) | 2005-09-14 | 2007-03-29 | Nippon Steel Materials Co Ltd | Cu CORE BALL |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029324A (en) * | 2019-11-22 | 2020-04-17 | 中国电子科技集团公司第十三研究所 | Three-dimensional microwave module circuit structure and preparation method thereof |
| KR20210086519A (en) | 2019-12-31 | 2021-07-08 | 덕산하이메탈(주) | Solder ball and the manufacturing method thereof |
| KR20210086520A (en) | 2019-12-31 | 2021-07-08 | 덕산하이메탈(주) | Low radiation solder ball and manufacturing method thereof |
| KR20230060778A (en) | 2021-10-28 | 2023-05-08 | 신종천 | Test apparatus |
| KR20240059252A (en) | 2022-10-27 | 2024-05-07 | 단국대학교 천안캠퍼스 산학협력단 | Alloy typed solder ball having high electrical conductivity and Manufacturing method thereof |
| KR20240146458A (en) | 2023-03-29 | 2024-10-08 | 단국대학교 천안캠퍼스 산학협력단 | Sheath-core typed alloy metal solder ball and Manufacturing method thereof |
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