CN111029255B - Method for changing surface electric field of material - Google Patents
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- CN111029255B CN111029255B CN201911228539.1A CN201911228539A CN111029255B CN 111029255 B CN111029255 B CN 111029255B CN 201911228539 A CN201911228539 A CN 201911228539A CN 111029255 B CN111029255 B CN 111029255B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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Abstract
The invention discloses a method for changing the surface electric field of a material, which is to modify a modification layer with a discontinuous artificial structure on the surface of a substrate; the change of the intensity and the spatial distribution of the surface electric field is realized by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure, wherein the material of the modification layer is a material with galvanic polarity. The method overcomes the defect that the traditional method for regulating and controlling the surface electric field depends on the specific properties of materials, achieves the aim of regulating and controlling the intensity and the spatial distribution of the surface electric field generated by the artificial structure array through the parameter design of the artificial structure configuration and the array size, and ensures that the influence range of the surface electric field is wider. The method is simple in implementation mode and wide in application range.
Description
Technical Field
The invention belongs to the field of material surface modification, and in particular relates to a method for changing a material surface electric field.
Background
Surface electric fields are critical to the physicochemical properties of the material surface and interface, and are important parameters in many semiconductor, chemical engineering, and bioengineering fields. The surface electric field of a material is an inherent property of the material, and a general method for changing the surface electric field of the material is to modify a modification layer material with different surface electric field properties on the surface of the material. For example, modifying a molecular material with a permanent dipole moment achieves the effect of changing the surface electric field.
The disadvantage of the above method is that the surface electric field characteristics of the molecules of the modification layer are inherent properties of the material itself, and cannot be adjusted. In addition, in a practical material system, dielectric materials with galvanic polarities (such as organic and inorganic ferroelectric materials) tend to have larger surface charges, and theoretically, larger surface electric fields can be generated, but a classical electromagnetic theory surface continuous galvanic dipole material film cannot generate surface electric fields. On the other hand, if the intensity or the spatial distribution of the surface electric field needs to be adjusted in practical application, the traditional method can only be achieved by changing the type of the material of the modification layer, so that the regulation and control of the surface electric field are very dependent on the characteristics of the modification material, and the application range of the surface electric field is greatly limited.
Disclosure of Invention
The invention aims to overcome the defects and provides a method for generating and changing surface potential based on a discontinuous artificial structure, and the purpose of adjusting the surface electric field intensity and the spatial distribution of the modification layer is achieved by designing and processing the modification layer with the artificial structure.
The object of the invention is achieved by:
a method for changing the electric field on the surface of material is to modify the modification layer with discontinuous artificial structure on the surface of the substrate; the change of the intensity and the spatial distribution of the surface electric field is realized by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with galvanic polarity. Such modifications may be conventional photolithographic techniques in the art.
The discontinuous artificial structure is a discontinuous disc structure or a discontinuous square disc structure.
The diameter thickness ratio of the disc structure ranges from 0.1 to 1000:1, and the side length thickness ratio of the square disc structure ranges from 0.1 to 1000:1.
the discontinuous artificial structure distribution can be square array, triangular array or hexagonal array.
When the discontinuous artificial structure is a discontinuous disc structure, the ratio of the artificial structure space of the square array to the disc diameter is 1-100: 1, a step of; the ratio of the artificial structure spacing of the triangular array to the diameter of the disc is 1-100: 1, a step of; the ratio of the artificial structure spacing of the hexagonal array to the diameter of the disc is 1-100:1.
When the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the artificial structure spacing of the square array to the square disc side length is 1-100:1; the ratio of the artificial structure spacing of the triangular array to the side length of the square tray is 1-100:1; the ratio of the artificial structure spacing of the hexagonal array to the side length of the square tray is 1-100:1. Beyond the above ratio range, the effect of the periodic structure will no longer be apparent.
The material of the modification layer is a material with electric dipole, and can be an organic or inorganic ferroelectric material. The inorganic ferroelectric material preferably comprises ABO 3 Double oxide crystals, e.g. titanic acidBarium, lithium niobate, potassium nitrate; hydrogen-containing crystals such as monopotassium phosphate, triglycine sulfate, rocholate; a lead-containing crystal such as any one of lead zirconate titanate; the organic ferroelectric material is preferably polyvinylidene fluoride.
The above-mentioned modification of the surface electric field strength and spatial distribution is achieved by selecting the modification layer material, the shape, the size and the distribution mode of the discontinuous artificial structure, and specifically, the following relationship may be generated:
if the discontinuous artificial structure is a disk structure, as shown in FIG. 2, the electric field distribution formula along the vertical disk direction at the center thereof is shown as (1.1)
Wherein epsilon is the dielectric constant of the medium in which the structure is located, D is the diameter of the disk, D is the thickness of the disk, sigma is the charge density, and z is the height from the disk. From the formula, it can be seen that Ez is approximately 0 when the disk diameter D is much greater than the disk thickness 2D, i.e., the surface electric field is absent. Ez is a finite large value, i.e., there is a surface electric field, when the disc diameter dimension is on the order of the disc thickness.
The above results demonstrate that for a continuous film of electric dipole material, as indicated by classical electromagnetic theory, there is no surface electric field, which is not zero when the electric dipole material is processed to a structure with a thickness that is close to the in-plane dimension order. Thus, the technical principle that a discontinuous artificial structure can generate a surface electric field is revealed by the simple physical model. As can be seen from the formula (1.1), the artificial structural discs made of the same material have different diameter-thickness ratios, and the intensity and the spatial distribution of the surface electric field have obvious differences. This means that the intensity and spatial distribution of the surface electric field can be controlled by the design of the dimensions of the artificial structure.
If the discontinuous artificial structure is a square disk structure, the electric field distribution formula along the vertical disk direction at the center of the discontinuous artificial structure is as follows:
wherein epsilon is the dielectric constant of the medium where the structure is located, D is the side length of the square disk, D is the thickness of the square disk, sigma is the charge density, and z is the height from the square disk.
As can be seen from the formula (1.2), the square plates of the artificial structure using the same material have different side length to thickness ratios, and the intensity and the spatial distribution of the surface electric field have obvious differences.
Compared with the prior art, the invention has the beneficial effects that: the method overcomes the defect that the traditional method for regulating and controlling the surface electric field depends on the specific properties of materials, achieves the aim of regulating and controlling the intensity and the spatial distribution of the surface electric field generated by the artificial structure array through the parameter design of the artificial structure configuration and the array size, and ensures that the influence range of the surface electric field is wider. The method is simple in implementation mode and wide in application range.
Drawings
Fig. 1 is a schematic diagram of an artificial structure for changing a surface electric field of a material according to an embodiment, wherein: 1-substrate, 2-artificial structure.
Fig. 2 is a schematic diagram of a dipole disc, in which rectangular coordinates are established with the center of the disc as the origin, and the upper surface z=d is positively charged, and the charge density is σ; the lower surface z= -d carries an equal amount of heterogeneous charge.
FIG. 3 is a graph showing the electric field strength of the center line of the disc in different diameter thickness ratios according to the distance.
FIG. 4 is a graph comparing electric field potential profiles generated by a disk structure with a square disk structure; a) The electric field potential generated by the disc microstructure is distributed in the xoy plane. b) The electric field potential generated by the square microstructure is distributed in the xoy plane.
Fig. 5 is a plot of the electric field potential generated by the disc microstructure array in the xoy plane at normalized distance z/d=2.
FIG. 6 is a graph showing the contrast of electric field potentials generated by different distribution modes of disc microstructures; a) b) electric field potential generated by the square array of disk microstructures, the lattice constants being a=2d (a) and a=4d (b), respectively. c) D) electric field potentials generated by the triangular array and the hexagonal array, and the lattice constants are a=2d.
FIG. 7 a) is a schematic diagram of the artificial structure of lithium niobate at the silicon-water interface. b) The electric field potential generated by the artificial microstructure array is distributed in the xoy plane, and the black point is the position of the center of the single microstructure. c) The electric field potential generated by the artificial microstructure array is further yoz distributed in the plane.
Detailed Description
Embodiments of the present invention will be described in more detail below in conjunction with specific examples.
Example 1
A device capable of changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the material of the modification layer is polyvinylidene fluoride, and the discontinuous artificial structure 2 is a discontinuous disc structure. The device structure is shown in fig. 1.
The specific surface electric field changing method is as follows:
changing the diameter-thickness ratio D/D of the disc structure, changing the distribution mode of the disc structure or changing the spacing of the disc structure according to the electric field distribution formula (1.1) of the disc structure.
The intensity distribution of the electric field Ez of the disk at the center in the direction perpendicular to the disk is shown in FIG. 3 when the disk structure diameter to thickness ratio D/D is 1:1, 10:1, 100:1, and 1000:1. It is obvious that the intensity and the spatial distribution of the surface electric field of the artificial structural discs made of the same material have obvious differences under different size designs. This means that the intensity and spatial distribution of the surface electric field can be controlled by the design of the dimensions of the artificial structure.
Example 2
A device capable of changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the material of the modification layer is polyvinylidene fluoride, and the discontinuous artificial structure 2 is a discontinuous square disc structure.
The specific surface electric field changing method is as follows:
and changing the side length thickness ratio D/D of the square disk structure according to an electric field distribution formula (1.2) of the square disk structure, changing the distribution mode of the square disk structure or changing the spacing of the square disk structure.
Example 3
The disc structure prepared according to example 1 was compared with the square disc structure prepared according to example 2, and the method and results are as follows.
The result of the XY plane spatial field distribution of a disc with the diameter thickness ratio of 10:1 and a square disc with the side length thickness ratio of 10:1, using the same material, at the normalized distance z=z/D of 0.25 is shown in fig. 4, and it is obvious that the spatial field distribution of the disc and the square disc are different, that is, the purpose of regulating and controlling the surface electric field potential spatial distribution generated by the artificial structure can be achieved through shape design.
The diameter-thickness ratio D/D is 10:1, the lattice constant a satisfies the normalized length a/d=2 of the disk array, and the XY plane spatial field distribution result at the normalized distance Z of 2 is shown in fig. 5, where the black point is the position of the center of the single microstructure. Comparing the electric field spatial distribution of the isolated artificial structure discs of the same size in fig. 4, the electric field distribution range of the obvious artificial structure array is wider. It is explained that the surface electric field generated by the isolated artificial structure has locality, and the artificial micro-structure array can overcome the problem.
The result of the distribution of the XY plane space field of the disc array with the diameter-thickness ratio of 10:1, which is arranged at different intervals and different shapes, at the position with the normalized distance Z of 2 is shown in fig. 6, wherein the black point is the position of the center of a single microstructure, and the purpose of regulating and controlling the space distribution of the surface electric field generated by the artificial structure array can be achieved by designing the arrangement mode of the artificial structure array. Namely, by changing the relative position relation of the artificial structures in the artificial structure array, the space distribution of the electric field generated by the array can be regulated and controlled.
Example 4
In order to verify the effectiveness of the design of the present invention, the following experiments were performed.
The lithium niobate thin film with the discontinuous artificial structure is selected to be modified on an intrinsic silicon substrate and placed in a pure water environment, and as shown in fig. 7 (a), the discontinuous artificial structure is a disc structure, the diameter of the disc is 20 microns, the thickness of the disc is 2 microns, and the lattice constant of a square array is 40 microns. In this experiment, the relative dielectric constant of water was 80, that of intrinsic silicon was 119, and that of lithium niobate was ε xx ＝ε yy ＝84，ε zz =30, the charge density of the lithium niobate surface after being completely polarized is 75.10 -2 C/m 2 With this structure, the electric field intensity distribution obtained at the solid-liquid interface is shown in fig. 7 (b) (c).
The foregoing description of embodiments of the invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described.
Claims (3)
1. A method for changing the electric field on the surface of a material is characterized in that a modification layer with a discontinuous artificial structure is modified on the surface of a substrate; the change of the intensity and the spatial distribution of the surface electric field generated by the artificial structure array is regulated and controlled by selecting the material of the modification layer, the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with galvanic polarity; the discontinuous artificial structure is a discontinuous disc structure or a discontinuous square disc structure, and the diameter and thickness ratio of the disc structure is 0.1-1000: 1, the side length and thickness ratio of the square disc structure is 0.1-1000: 1, a step of; the discontinuous artificial structures are distributed in square arrays, triangular arrays or hexagonal arrays; when the discontinuous artificial structure is a discontinuous disc structure, the ratio of the artificial structure space of the square array to the disc diameter is 1-100: 1, a step of; the ratio of the artificial structure spacing of the triangular array to the diameter of the disc is 1-100: 1, a step of; the ratio of the artificial structure spacing of the hexagonal array to the diameter of the disc is 1-100: 1, a step of; when the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the artificial structure spacing of the square array to the square disc side length is 1-100: 1, a step of; the ratio of the artificial structure spacing of the triangular array to the side length of the square tray is 1-100: 1, a step of; the ratio of the artificial structure spacing of the hexagonal array to the side length of the square disk is 1-100: 1.
2. the method of changing the electric field on a surface of a material according to claim 1, wherein the material having a galvanic polarity is an organic ferroelectric material or an inorganic ferroelectric material.
3. The method of changing the surface electric field of a material according to claim 2, wherein said organic ferroelectric material is polyvinylidene fluoride; the inorganic ferroelectric material is ABO 3 Any one of a double oxide crystal, a hydrogen-containing crystal, or a lead-containing crystal.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147860A (en) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | Fabrication of patterned poled dielectric structures and devices |
| JP2006147774A (en) * | 2004-11-18 | 2006-06-08 | Seiko Epson Corp | Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus |
| CN103885190A (en) * | 2014-04-11 | 2014-06-25 | 北京交通大学 | Manufacturing method of submicron photonic crystal phase array light beam splitter |
| CN108875225A (en) * | 2018-06-25 | 2018-11-23 | 西安交通大学 | Regulation method for insulator and its surface field in GIS/GIL |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20130149500A1 (en) * | 2011-12-06 | 2013-06-13 | Nazanin Bassiri-Gharb | Soft-template infiltration manufacturing of nanomaterials |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147860A (en) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | Fabrication of patterned poled dielectric structures and devices |
| JP2006147774A (en) * | 2004-11-18 | 2006-06-08 | Seiko Epson Corp | Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus |
| CN103885190A (en) * | 2014-04-11 | 2014-06-25 | 北京交通大学 | Manufacturing method of submicron photonic crystal phase array light beam splitter |
| CN108875225A (en) * | 2018-06-25 | 2018-11-23 | 西安交通大学 | Regulation method for insulator and its surface field in GIS/GIL |
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