CN103885190A - Manufacturing method of submicron photonic crystal phase array light beam splitter - Google Patents
Manufacturing method of submicron photonic crystal phase array light beam splitter Download PDFInfo
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 45
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000005684 electric field Effects 0.000 claims abstract description 20
- 230000000694 effects Effects 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 10
- 230000010287 polarization Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 40
- LFEUVBZXUFMACD-UHFFFAOYSA-H lead(2+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O LFEUVBZXUFMACD-UHFFFAOYSA-H 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 10
- 238000013461 design Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention belongs to the technical field of novel electronic devices and light information and relates to a manufacturing method of a submicron photonic crystal phase array light beam splitter. The method comprises the steps that (1) a Fresnel diffraction equation of a two-dimension hexagonal photonic crystal phase array structure is solved, and the optimum designing parameters are determined; (2) a hexagonal photonic crystal microstructural array mask plate of a two-dimension submicron periodic structure is designed, and a microstructural array polarization inversion electrode is etched on a lithium niobate crystal; (3) the lithium niobate crystal is subjected to electric field polarization, and a hexagonal array distribution crystal of a submicron structure is prepared; and (4) aluminum electrodes on the +/-z faces of the lithium niobate crystal are washed off, indium tin oxid thin film flat plate electrodes are subjected to magnetron sputtering on the +/-z faces, the +/-z faces of the lithium niobate crystal are connected to a positive electrode and a negative electrode of a direct-current power supply, the magnitude of voltages is adjusted, and the phase array light beam splitting effect is achieved. The designed light beam splitter has the advantages of being good in beam splitting evenness, large in light spot dot matrix number, high in diffraction efficiency and the like, and information parallel transmission and processing can be achieved.
Description
Technical Field
The invention belongs to the field of novel photoelectronic devices and the field of optical information, and particularly relates to a manufacturing method of a submicron photonic crystal phase array optical beam splitter.
Background
In many fields of modern technologies such as optical interconnection, optical computing, optical disc storage, electro-optical technology, image processing, and precision measurement, there is an increasing demand for parallel transmission and processing of information by converting an input of information (image or data) into an output of a plurality of information, thereby increasing speed. A beam splitter is an element that can split a beam of light into two or more beams of light. The conventional planar optical beam splitter is usually made of a metal film or a dielectric film, so that optical power distribution in multiple directions is realized, and when the planar optical beam splitter is used, a lens is required to converge light beams into an array of points, so that the requirement of parallel processing is difficult to meet. The emergence of new optical beam splitters well meets this requirement, mainly fourier holograms, stacked volume holographic gratings, self-focusing planar microlens arrays, phase fresnel zone lenses, Dammann gratings and Talbot gratings, etc. Beam splitters based on Dammann gratings and Talbot gratings are of great interest because of their ease of design and processing and their outstanding performance.
In 1971, Dammann firstly proposed and designed a Dammann grating, which is an unequal-pitch binary phase grating that is completely transparent to light, does not affect the amplitude distribution of optical information, only causes a change in phase, can be used for beam splitting, and has high diffraction efficiency. With the increasing application requirements and the level of manufacturing technology, various modified Dammann grating beam splitters are proposed in succession. In 1990 Lohmann and Thomas proposed the generation of bright and dark ordered optical illumination arrays by the Talbot effect of gratings, and in recent years, various optical beam splitters have been developed using the Talbot effect. The submicron photonic crystal phase array beam splitter is a phase grating device based on fractional Talbot effect of periodic function, and has the characteristics of the two grating beam splitters. The manufacturing material and process of the sub-micron photonic crystal phase grating beam splitter have great influence on the performance and the application range of the beam splitter, so the development of new materials and micro-optical processing technology become main subjects in the field.
The periodically poled ferroelectric crystal is an artificial microstructure photonic crystal with a periodically changed electric susceptibility structure. The specific periodic photonic microstructure has wide application in many fields, and especially Berger in 1998 proposes the concept of a two-dimensional periodic polarized photonic microstructure crystal, the proposal of the structure expands the one-dimensional periodic polarized photonic microstructure to a two-dimensional scale, and in recent years, the size of a periodic unit is also developed to a submicron order, so that the crystal structure is greatly complicated.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a manufacturing method of a submicron photonic crystal phase array optical beam splitter, which is characterized by comprising the following specific steps:
1) according to the wavelength, the hexagonal array parameters and the phase difference of the known incident light, a Fresnel diffraction equation of the two-dimensional hexagonal photonic crystal phase array structure is numerically solved, and the optimal design parameters are determined;
2) designing a hexagonal photonic crystal microstructure array mask plate with a two-dimensional submicron periodic structure according to the calculation result in the step 1), and etching a designed microstructure array polarization reversal electrode on the lithium niobate crystal by using a coating and photoetching technology; the lithium niobate crystal + z surface evaporates and plates the hexagonal array aluminium electrode, and-z surface plates the flat aluminium electrode;
3) performing electric field polarization on the lithium niobate crystal at room temperature by using an external short pulse backward reversal electric field technology, and applying a high-voltage electric field through electrodes to reverse ferroelectric domains in a hexagonal electrode area and not reverse hexagonal hollow areas so as to prepare hexagonal array distributed crystals with a submicron structure;
4) washing off aluminum electrodes on the +/-z surfaces of the lithium niobate crystals by using dilute hydrochloric acid, carrying out magnetron sputtering on indium tin oxide thin film plate electrodes on the +/-z surfaces of the lithium niobate crystals, respectively connecting the +/-z surfaces of the lithium niobate crystals with the positive and negative electrodes of an adjustable direct-current high-voltage power supply, and adjusting the voltage of the adjustable direct-current high-voltage power supply to achieve the array light beam splitting effect so as to realize the phase array light beam splitting effect.
The fresnel diffraction equation obtained in the step 1 is:
wherein, <math>
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n and m are integers; d ═ l/txD is the duty ratio of the hexagonal array, l is the diagonal length of the hexagonal array, and txIs the period of the hexagonal array in the x direction;Ztis Tablot diffraction imaging distance, and lambda is incident light wave wavelength; z = betaZtZ is the distance of the diffraction viewing screen, beta is the ratio of the distance of the diffraction viewing screen to the distance of Tablot diffraction imaging, and d33Is the piezoelectric coefficient, n, of a lithium niobate crystal0The refractive index of lambda incident light when no electric field is applied to the lithium niobate crystal, V is the adjustable DC high voltage power supply voltage, r13Is the linear electro-optic coefficient of lithium niobate crystal.
The optimal design parameters in the step 1) are as follows: the hexagonal array period is: t is txMost preferably 3 μm, tyIs the period of the hexagonal array in the y direction, and is tx3 times of root number, optimally 5.2 microns; talbot diffraction imaging distance Zt25.4 microns; the duty cycle D was 58%.
The invention has the beneficial effects that: the invention is suitable for systems such as optical communication, optical computation, optical neural network, optical multi-path imaging and the like, and can realize the parallel transmission and processing of information; the invention can realize continuous change of phase between 0-2 pi, can realize phase period distribution field of any light wave in the light transmission range (5 mu m-312 nm) of the magnesium-doped lithium niobate crystal, increases the number of light spot lattices of the beam splitter by the submicron structure, and can simultaneously finely electrically control and adjust the phase distribution in real time according to the experimental environment so as to obtain uniform light array intensity distribution; the invention not only expands the application range of the two-photon micro-structure crystal, but also provides guiding basis for the application research in the aspect of micro-structure array optical device technology.
Drawings
FIG. 1 is a flow chart of a method for fabricating a sub-micron photonic crystal phase array optical beam splitter according to the present invention;
FIG. 2 is a three-dimensional structure diagram of a sub-micron photonic crystal phase array optical splitter designed according to the present invention;
FIG. 3 is a diagram of an optical splitting experimental optical path using the optical splitter of the present invention;
1-a semiconductor laser; 2-lens L1; 3-a pinhole filter; 4-collimating lens L2; 5-submicron photonic crystal phase array optical beam splitter; 6-adjustable direct current high voltage power supply; 7-a diffractive viewing screen; 8-light field intensity distribution profile on the diffractive viewing screen 7;
FIG. 4 is a diagram of the phase difference obtained under different applied modulation fields.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
The two-dimensional submicron photonic crystal phase array optical beam splitter doped with the lithium magnesium niobate mainly utilizes the electro-optic effect and the piezoelectric effect of the photonic microstructure crystal, applies an external electric field to modulate the change of the refractive index and the piezoelectric thickness of the crystal, realizes the change of the phase to form a phase array grating, and generates uniform diffraction beam splitting after a plane light wave passes through the phase grating.
The flow of the manufacturing method of the optical splitter designed by the invention is shown in fig. 1, and specifically comprises the following steps:
1) the invention utilizes Fresnel diffraction theory and Fourier transform theory of secondary phase factor to analyze Tablot effect diffraction of a two-dimensional photon microstructure phase array when plane waves are incident, obtains intensity distribution of a diffraction field behind a phase grating, and numerically simulates complex amplitude distribution of light waves on different Tablot distance planes aiming at electro-optic effects of different modulation electric fields of the microstructure array. According to the known wavelength of incident light, the hexagonal array parameters and the phase difference, a Fresnel diffraction equation of the two-dimensional hexagonal photonic crystal phase array structure is numerically solved, and the optimal design parameters are determined.
The fresnel diffraction equation obtained is:
wherein, <math>
<mrow>
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n and m are integers; d ═ l/txD is the duty ratio of the hexagonal array, l is the diagonal length of the hexagonal array, and txIs the period of the hexagonal array in the x direction;Ztis Tablot diffraction imaging distance, and lambda is incident light wave wavelength; z = betaZtZ is the distance of the diffraction viewing screen, beta is the ratio of the distance of the diffraction viewing screen to the distance of Tablot diffraction imaging, and d33Is the piezoelectric coefficient, n, of a lithium niobate crystal0The refractive index of lambda incident light when no electric field is applied to the lithium niobate crystal, V is the adjustable DC high voltage power supply voltage, r13Is the linear electro-optic coefficient of lithium niobate crystal.
The optimal design parameters are as follows: the hexagonal array period is: t is txMost preferably 3 μm, tyIs the period of the hexagonal array in the y direction, and is tx3 times of root number, optimally 5.2 microns; talbot diffraction imaging distance Zt25.4 microns; the duty cycle D was 58%.
2) Designing a hexagonal photonic crystal microstructure array mask plate with a two-dimensional submicron periodic structure according to the calculation result in the step 1), and etching a designed microstructure array polarization reversal electrode on the lithium niobate crystal by using a coating and photoetching technology; the lithium niobate crystal + z surface evaporates and plates the hexagonal array aluminium electrode, and-z surface plates the flat aluminium electrode;
3) performing electric field polarization on the lithium niobate crystal at room temperature by using an external short pulse backward reversal electric field technology, and applying a high-voltage electric field through electrodes to reverse ferroelectric domains in a hexagonal electrode area and not reverse hexagonal hollow areas so as to prepare hexagonal array distributed crystals with a submicron structure;
4) washing off aluminum electrodes on the +/-z surfaces of the lithium niobate crystals by using dilute hydrochloric acid, carrying out magnetron sputtering on indium tin oxide thin film plate electrodes on the +/-z surfaces of the lithium niobate crystals, respectively connecting the +/-z surfaces of the lithium niobate crystals with the positive and negative electrodes of an adjustable direct-current high-voltage power supply, and adjusting the voltage of the adjustable direct-current high-voltage power supply to achieve the array light beam splitting effect so as to realize the phase array light beam splitting effect.
FIG. 2 is a three-dimensional structure diagram of a sub-micron photonic crystal phase array optical splitter according to the present invention; the working principle of the optical beam splitter is as follows: a z-direction electric field is applied to a transparent conductive electrode of the submicron photonic crystal phase array optical beam splitter, and when light passes through the ferroelectric domains of the submicron periodic structure with opposite polarization directions, phase difference is generated between the light beams passing through the domains with the opposite polarization directions due to an electro-optic effect and an inverse piezoelectric effect. The phase change is linearly changed with the intensity of the applied electric field, and is also related to the inherent parameters of the crystal, such as the wavelength of incident light wave, the thickness of the crystal, the piezoelectric coefficient, the refractive index, the linear electro-optic coefficient and the like. When the wavelength of the crystal material and the incident light is determined, the external electric field is changed, the phase change can be adjusted, the distribution of the diffraction field is correspondingly changed, and therefore the external electric field modulation of the Talbot effect light beam splitting is achieved.
The beam splitting experiment is carried out by using the optical beam splitter designed by the invention, and the experimental optical path for splitting the Talbot diffracted light is shown in figure 3. The light source used for diffraction is a semiconductor laser 1 with the wavelength of 532 nanometers (nm), light beams are converged to a pinhole filter 3 through a lens L1, after filtering, the light beams are converted into parallel light through a collimating lens L2 and then irradiate the parallel light to a submicron photonic crystal phase array optical beam splitter 5, Indium Tin Oxide (ITO) electrodes of the submicron photonic crystal phase array optical beam splitter 5 are respectively connected to an adjustable direct-current high-voltage power supply 6 through conducting wires, and by adjusting the voltage of the adjustable direct-current high-voltage power supply 6 and the position of a near-field diffraction observation screen 7 behind the optical beam splitter, an optical field intensity distribution diagram 8 on the diffraction observation screen 7, namely optical field diffraction beam splitting images at different Talbot distances, can be observed. Under the condition that the voltage value of the adjustable direct-current high-voltage power supply 6 is constant, different diffraction beam splitting effects can be obtained by changing the Talbot fractional distance; the position of the diffraction observation screen 7 is fixed, the voltage value of the adjustable direct-current high-voltage power supply 6 is changed, and Talbot diffraction beam splitting results of the sub-micron photonic crystal phase array optical beam splitter 5 under different phase differences are obtained, as shown in FIG. 4. The result shows that the size and the intensity of the diffracted light beam splitting spot can be adjusted by changing the external electric field and the diffraction position. Finally, whether the superiority of a beam splitter is mainly determined by beam splitting ratio, diffraction efficiency and spot intensity uniformity, analysis and experiments show that the beam splitter has the advantages of good beam splitting uniformity, a large number of spot lattices, high diffraction efficiency and the like, and has practical application in the development of novel micro-optical phase array devices.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (3)
1. A method for manufacturing a sub-micron photonic crystal phase array optical beam splitter is characterized by comprising the following specific steps:
1) according to the wavelength, the hexagonal array parameters and the phase difference of the known incident light, a Fresnel diffraction equation of the two-dimensional hexagonal photonic crystal phase array structure is numerically solved, and the optimal design parameters are determined;
2) designing a hexagonal photonic crystal microstructure array mask plate with a two-dimensional submicron periodic structure according to the calculation result in the step 1), and etching a designed microstructure array polarization reversal electrode on the lithium niobate crystal by using a coating and photoetching technology; the lithium niobate crystal + z surface evaporates and plates the hexagonal array aluminium electrode, and-z surface plates the flat aluminium electrode;
3) performing electric field polarization on the lithium niobate crystal at room temperature by using an external short pulse backward reversal electric field technology, and applying a high-voltage electric field through electrodes to reverse ferroelectric domains in a hexagonal electrode area and not reverse hexagonal hollow areas so as to prepare hexagonal array distributed crystals with a submicron structure;
4) washing off aluminum electrodes on the +/-z surfaces of the lithium niobate crystals by using dilute hydrochloric acid, carrying out magnetron sputtering on indium tin oxide thin film plate electrodes on the +/-z surfaces of the lithium niobate crystals, respectively connecting the +/-z surfaces of the lithium niobate crystals with the positive and negative electrodes of an adjustable direct-current high-voltage power supply, and adjusting the voltage of the adjustable direct-current high-voltage power supply to achieve the array light beam splitting effect so as to realize the phase array light beam splitting effect.
2. The method as claimed in claim 1, wherein the fresnel diffraction equation obtained in step 1 is:
wherein, <math>
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n and m are integers; d ═ l/txD is the duty ratio of the hexagonal array, l is the diagonal length of the hexagonal array, and txIs the period of the hexagonal array in the x direction;
Ztis Tablot diffraction imaging distance, and lambda is incident light wave wavelength; z = betaZtZ is the distance of the diffraction viewing screen, beta is the ratio of the distance of the diffraction viewing screen to the distance of Tablot diffraction imaging, and d33Is the piezoelectric coefficient, n, of a lithium niobate crystal0The refractive index of lambda incident light when no electric field is applied to the lithium niobate crystal, V is the adjustable DC high voltage power supply voltage, r13Is the linear electro-optic coefficient of lithium niobate crystal.
3. The method for manufacturing a sub-micron photonic crystal phase array optical beam splitter according to claim 2, wherein the optimal design parameters in the step 1) are as follows: the hexagonal array period is: t is txMost preferably 3 μm, tyIs the period of the hexagonal array in the y direction, and is tx3 times of root number, optimally 5.2 microns; talbot diffraction imaging distance Zt25.4 microns; the duty cycle D was 58%.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166181A (en) * | 2014-09-01 | 2014-11-26 | 中国科学院半导体研究所 | Method for manufacturing photonic crystal |
| CN110262142A (en) * | 2019-06-17 | 2019-09-20 | 京东方科技集团股份有限公司 | Position phase array machine and display device |
| CN111029255A (en) * | 2019-12-04 | 2020-04-17 | 复旦大学 | Method for changing surface electric field of material |
| CN112750549A (en) * | 2021-01-07 | 2021-05-04 | 清华大学 | Ion trap |
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| CN101373282A (en) * | 2008-10-09 | 2009-02-25 | 北京交通大学 | Method for manufacturing position phase array machine capable of adjusting two-dimensional photon microstructure |
| CN103631037A (en) * | 2013-12-10 | 2014-03-12 | 哈尔滨工业大学 | Optical beam-splitting system and method for realizing incident-light deflection by utilizing electrically-controlled quadratic electro-optical effect |
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| CN111029255A (en) * | 2019-12-04 | 2020-04-17 | 复旦大学 | Method for changing surface electric field of material |
| CN111029255B (en) * | 2019-12-04 | 2023-09-15 | 复旦大学 | Method for changing surface electric field of material |
| CN112750549A (en) * | 2021-01-07 | 2021-05-04 | 清华大学 | Ion trap |
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