CN111029255A - Method for changing surface electric field of material - Google Patents

Method for changing surface electric field of material Download PDF

Info

Publication number
CN111029255A
CN111029255A CN201911228539.1A CN201911228539A CN111029255A CN 111029255 A CN111029255 A CN 111029255A CN 201911228539 A CN201911228539 A CN 201911228539A CN 111029255 A CN111029255 A CN 111029255A
Authority
CN
China
Prior art keywords
discontinuous
electric field
artificial structure
disc
square
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911228539.1A
Other languages
Chinese (zh)
Other versions
CN111029255B (en
Inventor
田传山
苏雨聃
徐影
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fudan University
Original Assignee
Fudan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fudan University filed Critical Fudan University
Priority to CN201911228539.1A priority Critical patent/CN111029255B/en
Publication of CN111029255A publication Critical patent/CN111029255A/en
Application granted granted Critical
Publication of CN111029255B publication Critical patent/CN111029255B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention discloses a method for changing the surface electric field of a material, which is to modify a modification layer with a discontinuous artificial structure on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer, the shape, the size and the distribution mode of the discontinuous artificial structure, wherein the material of the modification layer is a material with electric dipole property. The method overcomes the defect that the traditional method for regulating the surface electric field depends on the specific properties of materials, achieves the aim of regulating the strength and the spatial distribution of the surface electric field generated by the artificial structure array by designing and regulating the parameters of the artificial structure configuration and the array size, and has wider influence range of the surface electric field. The method is simple in implementation mode and wide in application range.

Description

Method for changing surface electric field of material
Technical Field
The invention belongs to the field of material surface modification, and particularly relates to a method for changing an electric field on a material surface.
Background
Surface electric fields are critical to the physicochemical properties of material surfaces and interfaces and are an important parameter in many fields of semiconductor, chemical engineering and biological engineering. The surface electric field of a material is an inherent characteristic of the material, and a general method for changing the surface electric field of the material is to modify a material with a modified layer having different surface electric field properties on the surface of the material. For example, the modification of the surface electric field is achieved by modifying the molecular material with a permanent dipole moment.
The above method has a disadvantage that the surface electric field characteristics of the molecules of the modification layer are inherent in the material itself and cannot be adjusted. In an actual material system, a dielectric material with electric dipole property (such as an organic or inorganic ferroelectric material) tends to have larger surface charge, and theoretically, a larger surface electric field can be generated, but the surface electric field cannot be generated by a surface continuous electric dipole material film in the classical electromagnetic theory. On the other hand, in practical application, if the intensity or spatial distribution of the surface electric field needs to be adjusted, the traditional method can only be achieved by changing the type of the material of the modification layer, so that the regulation and control of the surface electric field are very dependent on the characteristics of the modification material, and the application range of the surface electric field is greatly restricted.
Disclosure of Invention
The invention aims to overcome the defects, provides a method for generating and changing surface potential based on a discontinuous artificial structure, and achieves the purpose of adjusting the surface electric field intensity and spatial distribution of a modified layer by designing and processing the modified layer with the artificial structure.
The purpose of the invention is realized by the following modes:
a method for changing the surface electric field of a material is to modify a modification layer with a discontinuous artificial structure on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with electric dipole property. The modification may be a photolithographic technique conventional in the art.
The discontinuous artificial structure is a discontinuous disc structure or a discontinuous square disc structure.
The diameter thickness ratio of the disc structure ranges from 0.1 to 1000:1, and the side length thickness ratio of the square disc structure ranges from 0.1 to 1000: 1.
the discontinuous artificial structure distribution can be a square array, a triangular array or a hexagonal array.
When above-mentioned discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of square array and the ratio of disc diameter are 1 ~ 100: 1; the ratio of the artificial structure interval of the triangular array to the diameter of the disc is 1-100: 1; the ratio of the spacing of the artificial structures in the hexagonal array to the diameter of the disc is 1-100: 1.
When the discontinuous artificial structure is a discontinuous square disk structure, the ratio of the artificial structure interval of the square array to the side length of the square disk is 1-100: 1; the ratio of the distance between the artificial structures of the triangular array to the side length of the square disc is 1-100: 1; the ratio of the spacing between the artificial structures of the hexagonal array to the side length of the square disk is 1-100: 1. Beyond the above ratio range, the effect of the periodic structure will no longer be apparent.
The material of the modification layer is a material having electric dipole property, and may be an organic or inorganic ferroelectric material. The inorganic ferroelectric material preferably comprises ABO3Type double oxide crystals such as barium titanate, lithium niobate, potassium nitrate; hydrogen-containing crystals such as potassium dihydrogen phosphate, triglycine sulfate, and rosette; lead-containing crystals such as any of lead zirconate titanate; the organic ferroelectric material is preferably polyvinylidene fluoride.
The above-mentioned changes of the intensity and spatial distribution of the surface electric field by selecting the material of the modification layer and the shape, size and distribution mode of the discontinuous artificial structure may specifically refer to the following relationships:
if the discontinuous artificial structure is a disk structure, as shown in FIG. 2, the electric field distribution formula at the center along the direction perpendicular to the disk is shown in (1.1)
Figure RE-GDA0002355228890000031
Wherein epsilon is the dielectric constant of the medium in which the structure is positioned, D is the diameter of the disk, D is the thickness of the disk, sigma is the charge density, and z is the height from the disk. As can be seen from the formula, when the disc diameter D is much larger than the disc thickness 2D, Ez is approximately 0, i.e., the surface electric field is not present. When the order of the disc diameter dimension is close to the disc thickness, Ez is a finite value, i.e. a surface electric field is present.
The above results show that for continuous films of electric dipole material, as indicated by classical electromagnetic theory, there is no surface electric field, whereas when the electric dipole material is processed into structures with a thickness close to the order of the in-plane dimensions, the surface electric field is not zero. Thus, the technical principle that discontinuous artificial structures can generate surface electric fields is revealed through the simple physical model. It can be known from the formula (1.1) that the artificial structure disks made of the same material have different diameter-thickness ratios, and the intensity and spatial distribution of the surface electric field have obvious differences. This means that the intensity and spatial distribution of the surface electric field can be artificially controlled by the dimensioning of the artificial structure.
If the discontinuous artificial structure is a square disc structure, the electric field distribution formula at the center along the direction vertical to the disc is as follows:
Figure RE-GDA0002355228890000041
wherein epsilon is the dielectric constant of the medium in which the structure is positioned, D is the side length of the square disk, D is the thickness of the square disk, sigma is the charge density, and z is the height from the square disk.
As can be seen from the formula (1.2), the artificial square disk made of the same material has different side length-thickness ratios, and the intensity and spatial distribution of the surface electric field have obvious differences.
Compared with the prior art, the invention has the beneficial effects that: the method overcomes the defect that the traditional method for regulating the surface electric field depends on the specific properties of materials, and achieves the purpose of regulating the strength and the spatial distribution of the surface electric field generated by the artificial structure array through the parameter design of the artificial structure configuration and the array size, so that the influence range of the surface electric field is wider. The method is simple in implementation mode and wide in application range.
Drawings
Fig. 1 is a schematic diagram of an artificial structure for changing an electric field on a surface of a material according to an embodiment, in which: 1-substrate, 2-artificial structure.
Fig. 2 is a schematic diagram of a dipole disk, where the center of the disk is used as an origin to establish rectangular coordinates, the upper surface z ═ d is positively charged, and the charge density is σ; the lower surface z-d carries an equal amount of heterogeneous charge.
FIG. 3 is a graph showing the variation of the electric field intensity of the center line of the disk with the distance in the thickness ratio of different diameters.
FIG. 4 is a graph comparing the electric field potential distributions generated by the disk structure with the square disk structure; a) the electric field potential generated by the disk microstructure is distributed in the xoy plane. b) The electric field potential generated by the square microstructure is distributed in the xoy plane.
Fig. 5 is a graph of the electric field potential generated by the disk microstructure array at a normalized distance z/D of 2, xoy plane.
FIG. 6 is a graph showing the comparison of electric field and potential generated by different distribution patterns of the disk microstructure; a) b) electric field potential generated by square array of disc microstructure with lattice constant of a-2D (a) and a-4D (b). c) D) electric field potentials generated by the triangular array and the hexagonal array, and lattice constants of the electric field potentials are both a-2D.
Fig. 7a) schematic diagram of artificial structure of silicon-water interface lithium niobate. b) Electric field potential generated by the artificial microstructure array is distributed in the xoy plane, and a black point is the position of the center of a single microstructure. c) The electric field potential generated by the artificial microstructure array is distributed in the yoz plane.
Detailed Description
Embodiments of the present invention will be described in more detail below with reference to specific examples.
Example 1
A device capable of changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the modification layer is made of polyvinylidene fluoride, and the discontinuous artificial structure 2 is a discontinuous disc structure. The device structure is shown in fig. 1.
The specific method for changing the surface electric field is as follows:
and changing the diameter-thickness ratio D/D of the disc structures, changing the distribution mode of the disc structures or changing the intervals of the disc structures according to the electric field distribution formula (1.1) of the disc structures.
Figure RE-GDA0002355228890000051
When the disk structure diameter-thickness ratios D/D are 1:1, 10:1, 100:1 and 1000:1, the intensity distribution of the electric field Ez of the disk at the center in the direction perpendicular to the disk is shown in fig. 3. It is obvious that the intensity and spatial distribution of the surface electric field of the artificial structure disc made of the same material have obvious difference under different size designs. This means that the intensity and spatial distribution of the surface electric field can be artificially controlled by the dimensioning of the artificial structure.
Example 2
A device capable of changing an electric field on the surface of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the modification layer is made of polyvinylidene fluoride, and the discontinuous artificial structure 2 is of a discontinuous square disc structure.
The specific method for changing the surface electric field is as follows:
and changing the side length-thickness ratio D/D of the square disc structure according to the square disc structure electric field distribution formula (1.2), and changing the distribution mode of the square disc structure or changing the interval of the square disc structure.
Figure RE-GDA0002355228890000061
Example 3
A comparison of the disc structure prepared according to example 1 with the square disc structure prepared according to example 2 is made, the method and results are as follows.
The XY plane spatial field distribution results of a disk with the same material and the diameter-thickness ratio of 10:1 and a square disk with the side-length-thickness ratio of 10:1 at the normalized distance Z ═ Z/D of 0.25 are shown in fig. 4, and it is obvious that the spatial field distributions of the disk and the square disk are different, that is, the purpose of regulating and controlling the surface electric field potential spatial distribution generated by the artificial structure can be achieved through shape design.
The result of the XY plane spatial field distribution at a normalized distance Z of 2 for a disk array having a diameter to thickness ratio D/D of 10:1 and a lattice constant a satisfying a normalized length a/D of 2 is shown in fig. 5, where the black point is the position of the center of a single microstructure. Comparing the spatial distribution of the electric field of the isolated artificial structure disks with the same size in fig. 4, it is apparent that the electric field distribution range of the artificial structure array is wider. The surface electric field generated by the isolated artificial structure has locality, and the artificial microstructure array can overcome the problem.
The XY plane space field distribution result of the disk arrays arranged at different pitches and different shapes and with the diameter-thickness ratio of 10:1 at the normalized distance Z of 2 is shown in figure 6, a black point in the figure is the position of the center of a single microstructure, and the purpose of regulating and controlling the surface electric field space distribution generated by the artificial structure array can be achieved by designing the arrangement mode of the artificial structure array. Namely, the relative position relationship of the artificial structures in the artificial structure array is changed, and the spatial distribution of the electric field generated by the array can be regulated and controlled.
Example 4
To verify the effectiveness of the design of the present invention, the following experiments were performed.
The lithium niobate thin film with the discontinuous artificial structure is selected to be modified on an intrinsic silicon substrate and placed in a pure water environment, as shown in fig. 7(a), the discontinuous artificial structure is a disc structure, the diameter of the disc is 20 microns, the thickness of the disc is 2 microns, and the lattice constant of a square array formed by the disc structure is 40 microns. In this experiment, the relative dielectric constant of water taken was 80, the relative dielectric constant of intrinsic silicon was 119, and the relative dielectric constant of lithium niobate was εxx=εyy=84,ε zz30, the charge density of the lithium niobate surface after complete polarization is 75 · 10-2C/m2With this structure, the electric field intensity distribution obtained at the solid-liquid interface is as shown in fig. 7(b) and (c).
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.

Claims (10)

1. A method for changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure is modified on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with electric dipole property.
2. The method of claim 1, wherein the discontinuous artificial structure is a discontinuous circular disk structure or a discontinuous square disk structure.
3. The method for generating and varying a surface electric field based on a discontinuous artificial structure according to claim 2, wherein the ratio of the diameter to the thickness of the disc structure is 0.1-1000: 1.
4. the method for generating and varying the surface electric field based on the discontinuous artificial structure according to claim 2, wherein the ratio of the side length to the thickness of the square disk structure is 0.1-1000: 1.
5. the method of claim 2, wherein the distribution of the discontinuous structures is a square array, a triangular array or a hexagonal array.
6. The method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of square array and the ratio of disc diameter are 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disk structure, the ratio of the artificial structure interval of the square array to the side length of the square disk is 1-100: 1.
7. the method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of triangular array and the ratio of disc diameter are 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the artificial structure interval of the triangular array to the side length of the square disc is 1-100: 1.
8. the method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the ratio of the artificial structure interval of hexagonal array and disc diameter is 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the distance between the artificial structures of the hexagonal array to the side length of the square disc is 1-100: 1.
9. the method of claim 1, wherein the material having electric dipole property is organic ferroelectric material or inorganic ferroelectric material.
10. The method of claim 9, wherein the organic ferroelectric material is polyvinylidene fluoride; the inorganic ferroelectric material is ABO3Any one of type double oxide crystals, hydrogen-containing crystals, or lead-containing crystals.
CN201911228539.1A 2019-12-04 2019-12-04 Method for changing surface electric field of material Active CN111029255B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911228539.1A CN111029255B (en) 2019-12-04 2019-12-04 Method for changing surface electric field of material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911228539.1A CN111029255B (en) 2019-12-04 2019-12-04 Method for changing surface electric field of material

Publications (2)

Publication Number Publication Date
CN111029255A true CN111029255A (en) 2020-04-17
CN111029255B CN111029255B (en) 2023-09-15

Family

ID=70207947

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911228539.1A Active CN111029255B (en) 2019-12-04 2019-12-04 Method for changing surface electric field of material

Country Status (1)

Country Link
CN (1) CN111029255B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147860A (en) * 1994-05-09 1997-04-16 迪肯研究室 Fabrication of patterned poled dielectric structures and devices
JP2006147774A (en) * 2004-11-18 2006-06-08 Seiko Epson Corp Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus
US20130149500A1 (en) * 2011-12-06 2013-06-13 Nazanin Bassiri-Gharb Soft-template infiltration manufacturing of nanomaterials
CN103885190A (en) * 2014-04-11 2014-06-25 北京交通大学 Manufacturing method of submicron photonic crystal phase array light beam splitter
CN108875225A (en) * 2018-06-25 2018-11-23 西安交通大学 Regulation method for insulator and its surface field in GIS/GIL

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1147860A (en) * 1994-05-09 1997-04-16 迪肯研究室 Fabrication of patterned poled dielectric structures and devices
JP2006147774A (en) * 2004-11-18 2006-06-08 Seiko Epson Corp Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus
US20130149500A1 (en) * 2011-12-06 2013-06-13 Nazanin Bassiri-Gharb Soft-template infiltration manufacturing of nanomaterials
CN103885190A (en) * 2014-04-11 2014-06-25 北京交通大学 Manufacturing method of submicron photonic crystal phase array light beam splitter
CN108875225A (en) * 2018-06-25 2018-11-23 西安交通大学 Regulation method for insulator and its surface field in GIS/GIL

Also Published As

Publication number Publication date
CN111029255B (en) 2023-09-15

Similar Documents

Publication Publication Date Title
US6540972B1 (en) Carbon material and method of preparing the same
US20080160316A1 (en) Particle Network and Method For Realizing Such a Network
JP2007096304A (en) Ferroelectric domain array structure, manufacturing method thereof, and ferroelectric film of the structure
CN108565336B (en) BiFeO3Film and preparation method thereof
US20160005949A1 (en) DEVICES AND METHODS FOR CONTROLLlNG MAGNETIC ANISTROPY WITH LOCALIZED BIAXIAL STRAIN IN A PIEZOELECTRIC SUBSTRATE
Bakaul et al. Freestanding ferroelectric bubble domains
AU2021102996A4 (en) Topological Magnetic structure and preparation method thereof, regulation method of topological magnetic structure and memory based on the topological magnetic structure
Tian et al. Manipulating the ferroelectric domain states and structural distortion in epitaxial BiFeO3 ultrathin films via Bi nonstoichiometry
Zhou et al. Internal electric field and polarization backswitching induced by Nb doping in BiFeO3 thin films
Tang et al. Periodic polarization waves in a strained, highly polar ultrathin SrTiO3
Takamoto et al. Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential
CN111029255A (en) Method for changing surface electric field of material
CN112467025B (en) Method for constructing periodic strip domain in ferroelectric film by utilizing needlepoint electric field
Gong et al. Thickness-dependent polar domain evolution in strained, ultrathin PbTiO3 films
WO2020087888A1 (en) Method for testing columnar self-assembled thin film structure and preparation method thereof
Tian et al. Templated growth strategy for highly ordered topological ferroelectric quad-domain textures
NT AL-RASHID et al. Study of the effect of nanoparticle size on the dielectric constant and concentration of charge carriers of Si and CdS materials
Zhou et al. Ferroelectricity in epitaxial perovskite oxide Bi2WO6 films with one-unit-cell thickness
Liang et al. Characterization of multiferroic domain structures in multiferroic oxides
Hyun et al. Self-positioned nanosized mask for transparent and flexible ferroelectric polymer nanodiodes array
Ievlev et al. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness
Zhang et al. Electromagnetic Field‐Responsive and Accurate Control of Bending in VO2 Based Micro‐Pillar Array
CN110473873B (en) Preparation method of ordered ferroelectric topological domain structure array
Levanyuk et al. Effects of the depolarization field in a perforated film of the biaxial ferroelectric
Feng et al. Crystallographic Orientation and Surface Charge-Tailored Continuous Polarization Rotation State in Epitaxially Ferroelectric Nanostructures

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant