CN111029255A - Method for changing surface electric field of material - Google Patents
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- CN111029255A CN111029255A CN201911228539.1A CN201911228539A CN111029255A CN 111029255 A CN111029255 A CN 111029255A CN 201911228539 A CN201911228539 A CN 201911228539A CN 111029255 A CN111029255 A CN 111029255A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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Abstract
The invention discloses a method for changing the surface electric field of a material, which is to modify a modification layer with a discontinuous artificial structure on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer, the shape, the size and the distribution mode of the discontinuous artificial structure, wherein the material of the modification layer is a material with electric dipole property. The method overcomes the defect that the traditional method for regulating the surface electric field depends on the specific properties of materials, achieves the aim of regulating the strength and the spatial distribution of the surface electric field generated by the artificial structure array by designing and regulating the parameters of the artificial structure configuration and the array size, and has wider influence range of the surface electric field. The method is simple in implementation mode and wide in application range.
Description
Technical Field
The invention belongs to the field of material surface modification, and particularly relates to a method for changing an electric field on a material surface.
Background
Surface electric fields are critical to the physicochemical properties of material surfaces and interfaces and are an important parameter in many fields of semiconductor, chemical engineering and biological engineering. The surface electric field of a material is an inherent characteristic of the material, and a general method for changing the surface electric field of the material is to modify a material with a modified layer having different surface electric field properties on the surface of the material. For example, the modification of the surface electric field is achieved by modifying the molecular material with a permanent dipole moment.
The above method has a disadvantage that the surface electric field characteristics of the molecules of the modification layer are inherent in the material itself and cannot be adjusted. In an actual material system, a dielectric material with electric dipole property (such as an organic or inorganic ferroelectric material) tends to have larger surface charge, and theoretically, a larger surface electric field can be generated, but the surface electric field cannot be generated by a surface continuous electric dipole material film in the classical electromagnetic theory. On the other hand, in practical application, if the intensity or spatial distribution of the surface electric field needs to be adjusted, the traditional method can only be achieved by changing the type of the material of the modification layer, so that the regulation and control of the surface electric field are very dependent on the characteristics of the modification material, and the application range of the surface electric field is greatly restricted.
Disclosure of Invention
The invention aims to overcome the defects, provides a method for generating and changing surface potential based on a discontinuous artificial structure, and achieves the purpose of adjusting the surface electric field intensity and spatial distribution of a modified layer by designing and processing the modified layer with the artificial structure.
The purpose of the invention is realized by the following modes:
a method for changing the surface electric field of a material is to modify a modification layer with a discontinuous artificial structure on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with electric dipole property. The modification may be a photolithographic technique conventional in the art.
The discontinuous artificial structure is a discontinuous disc structure or a discontinuous square disc structure.
The diameter thickness ratio of the disc structure ranges from 0.1 to 1000:1, and the side length thickness ratio of the square disc structure ranges from 0.1 to 1000: 1.
the discontinuous artificial structure distribution can be a square array, a triangular array or a hexagonal array.
When above-mentioned discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of square array and the ratio of disc diameter are 1 ~ 100: 1; the ratio of the artificial structure interval of the triangular array to the diameter of the disc is 1-100: 1; the ratio of the spacing of the artificial structures in the hexagonal array to the diameter of the disc is 1-100: 1.
When the discontinuous artificial structure is a discontinuous square disk structure, the ratio of the artificial structure interval of the square array to the side length of the square disk is 1-100: 1; the ratio of the distance between the artificial structures of the triangular array to the side length of the square disc is 1-100: 1; the ratio of the spacing between the artificial structures of the hexagonal array to the side length of the square disk is 1-100: 1. Beyond the above ratio range, the effect of the periodic structure will no longer be apparent.
The material of the modification layer is a material having electric dipole property, and may be an organic or inorganic ferroelectric material. The inorganic ferroelectric material preferably comprises ABO3Type double oxide crystals such as barium titanate, lithium niobate, potassium nitrate; hydrogen-containing crystals such as potassium dihydrogen phosphate, triglycine sulfate, and rosette; lead-containing crystals such as any of lead zirconate titanate; the organic ferroelectric material is preferably polyvinylidene fluoride.
The above-mentioned changes of the intensity and spatial distribution of the surface electric field by selecting the material of the modification layer and the shape, size and distribution mode of the discontinuous artificial structure may specifically refer to the following relationships:
if the discontinuous artificial structure is a disk structure, as shown in FIG. 2, the electric field distribution formula at the center along the direction perpendicular to the disk is shown in (1.1)
Wherein epsilon is the dielectric constant of the medium in which the structure is positioned, D is the diameter of the disk, D is the thickness of the disk, sigma is the charge density, and z is the height from the disk. As can be seen from the formula, when the disc diameter D is much larger than the disc thickness 2D, Ez is approximately 0, i.e., the surface electric field is not present. When the order of the disc diameter dimension is close to the disc thickness, Ez is a finite value, i.e. a surface electric field is present.
The above results show that for continuous films of electric dipole material, as indicated by classical electromagnetic theory, there is no surface electric field, whereas when the electric dipole material is processed into structures with a thickness close to the order of the in-plane dimensions, the surface electric field is not zero. Thus, the technical principle that discontinuous artificial structures can generate surface electric fields is revealed through the simple physical model. It can be known from the formula (1.1) that the artificial structure disks made of the same material have different diameter-thickness ratios, and the intensity and spatial distribution of the surface electric field have obvious differences. This means that the intensity and spatial distribution of the surface electric field can be artificially controlled by the dimensioning of the artificial structure.
If the discontinuous artificial structure is a square disc structure, the electric field distribution formula at the center along the direction vertical to the disc is as follows:
wherein epsilon is the dielectric constant of the medium in which the structure is positioned, D is the side length of the square disk, D is the thickness of the square disk, sigma is the charge density, and z is the height from the square disk.
As can be seen from the formula (1.2), the artificial square disk made of the same material has different side length-thickness ratios, and the intensity and spatial distribution of the surface electric field have obvious differences.
Compared with the prior art, the invention has the beneficial effects that: the method overcomes the defect that the traditional method for regulating the surface electric field depends on the specific properties of materials, and achieves the purpose of regulating the strength and the spatial distribution of the surface electric field generated by the artificial structure array through the parameter design of the artificial structure configuration and the array size, so that the influence range of the surface electric field is wider. The method is simple in implementation mode and wide in application range.
Drawings
Fig. 1 is a schematic diagram of an artificial structure for changing an electric field on a surface of a material according to an embodiment, in which: 1-substrate, 2-artificial structure.
Fig. 2 is a schematic diagram of a dipole disk, where the center of the disk is used as an origin to establish rectangular coordinates, the upper surface z ═ d is positively charged, and the charge density is σ; the lower surface z-d carries an equal amount of heterogeneous charge.
FIG. 3 is a graph showing the variation of the electric field intensity of the center line of the disk with the distance in the thickness ratio of different diameters.
FIG. 4 is a graph comparing the electric field potential distributions generated by the disk structure with the square disk structure; a) the electric field potential generated by the disk microstructure is distributed in the xoy plane. b) The electric field potential generated by the square microstructure is distributed in the xoy plane.
Fig. 5 is a graph of the electric field potential generated by the disk microstructure array at a normalized distance z/D of 2, xoy plane.
FIG. 6 is a graph showing the comparison of electric field and potential generated by different distribution patterns of the disk microstructure; a) b) electric field potential generated by square array of disc microstructure with lattice constant of a-2D (a) and a-4D (b). c) D) electric field potentials generated by the triangular array and the hexagonal array, and lattice constants of the electric field potentials are both a-2D.
Fig. 7a) schematic diagram of artificial structure of silicon-water interface lithium niobate. b) Electric field potential generated by the artificial microstructure array is distributed in the xoy plane, and a black point is the position of the center of a single microstructure. c) The electric field potential generated by the artificial microstructure array is distributed in the yoz plane.
Detailed Description
Embodiments of the present invention will be described in more detail below with reference to specific examples.
Example 1
A device capable of changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the modification layer is made of polyvinylidene fluoride, and the discontinuous artificial structure 2 is a discontinuous disc structure. The device structure is shown in fig. 1.
The specific method for changing the surface electric field is as follows:
and changing the diameter-thickness ratio D/D of the disc structures, changing the distribution mode of the disc structures or changing the intervals of the disc structures according to the electric field distribution formula (1.1) of the disc structures.
When the disk structure diameter-thickness ratios D/D are 1:1, 10:1, 100:1 and 1000:1, the intensity distribution of the electric field Ez of the disk at the center in the direction perpendicular to the disk is shown in fig. 3. It is obvious that the intensity and spatial distribution of the surface electric field of the artificial structure disc made of the same material have obvious difference under different size designs. This means that the intensity and spatial distribution of the surface electric field can be artificially controlled by the dimensioning of the artificial structure.
Example 2
A device capable of changing an electric field on the surface of a material is characterized in that a modification layer with a discontinuous artificial structure 2 is modified on the surface of a substrate 1, the modification layer is made of polyvinylidene fluoride, and the discontinuous artificial structure 2 is of a discontinuous square disc structure.
The specific method for changing the surface electric field is as follows:
and changing the side length-thickness ratio D/D of the square disc structure according to the square disc structure electric field distribution formula (1.2), and changing the distribution mode of the square disc structure or changing the interval of the square disc structure.
Example 3
A comparison of the disc structure prepared according to example 1 with the square disc structure prepared according to example 2 is made, the method and results are as follows.
The XY plane spatial field distribution results of a disk with the same material and the diameter-thickness ratio of 10:1 and a square disk with the side-length-thickness ratio of 10:1 at the normalized distance Z ═ Z/D of 0.25 are shown in fig. 4, and it is obvious that the spatial field distributions of the disk and the square disk are different, that is, the purpose of regulating and controlling the surface electric field potential spatial distribution generated by the artificial structure can be achieved through shape design.
The result of the XY plane spatial field distribution at a normalized distance Z of 2 for a disk array having a diameter to thickness ratio D/D of 10:1 and a lattice constant a satisfying a normalized length a/D of 2 is shown in fig. 5, where the black point is the position of the center of a single microstructure. Comparing the spatial distribution of the electric field of the isolated artificial structure disks with the same size in fig. 4, it is apparent that the electric field distribution range of the artificial structure array is wider. The surface electric field generated by the isolated artificial structure has locality, and the artificial microstructure array can overcome the problem.
The XY plane space field distribution result of the disk arrays arranged at different pitches and different shapes and with the diameter-thickness ratio of 10:1 at the normalized distance Z of 2 is shown in figure 6, a black point in the figure is the position of the center of a single microstructure, and the purpose of regulating and controlling the surface electric field space distribution generated by the artificial structure array can be achieved by designing the arrangement mode of the artificial structure array. Namely, the relative position relationship of the artificial structures in the artificial structure array is changed, and the spatial distribution of the electric field generated by the array can be regulated and controlled.
Example 4
To verify the effectiveness of the design of the present invention, the following experiments were performed.
The lithium niobate thin film with the discontinuous artificial structure is selected to be modified on an intrinsic silicon substrate and placed in a pure water environment, as shown in fig. 7(a), the discontinuous artificial structure is a disc structure, the diameter of the disc is 20 microns, the thickness of the disc is 2 microns, and the lattice constant of a square array formed by the disc structure is 40 microns. In this experiment, the relative dielectric constant of water taken was 80, the relative dielectric constant of intrinsic silicon was 119, and the relative dielectric constant of lithium niobate was εxx＝εyy＝84，ε zz30, the charge density of the lithium niobate surface after complete polarization is 75 · 10-2C/m2With this structure, the electric field intensity distribution obtained at the solid-liquid interface is as shown in fig. 7(b) and (c).
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A method for changing the surface electric field of a material is characterized in that a modification layer with a discontinuous artificial structure is modified on the surface of a substrate; the intensity and the spatial distribution of the surface electric field are changed by selecting the material of the modification layer and the shape, the size and the distribution mode of the discontinuous artificial structure; wherein, the material of the modification layer is a material with electric dipole property.
2. The method of claim 1, wherein the discontinuous artificial structure is a discontinuous circular disk structure or a discontinuous square disk structure.
3. The method for generating and varying a surface electric field based on a discontinuous artificial structure according to claim 2, wherein the ratio of the diameter to the thickness of the disc structure is 0.1-1000: 1.
4. the method for generating and varying the surface electric field based on the discontinuous artificial structure according to claim 2, wherein the ratio of the side length to the thickness of the square disk structure is 0.1-1000: 1.
5. the method of claim 2, wherein the distribution of the discontinuous structures is a square array, a triangular array or a hexagonal array.
6. The method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of square array and the ratio of disc diameter are 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disk structure, the ratio of the artificial structure interval of the square array to the side length of the square disk is 1-100: 1.
7. the method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the artificial structure interval of triangular array and the ratio of disc diameter are 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the artificial structure interval of the triangular array to the side length of the square disc is 1-100: 1.
8. the method of claim 5, wherein the surface electric field is generated and changed based on the discontinuous artificial structure, and the method further comprises:
when discontinuous artificial structure is discontinuous disc structure, the ratio of the artificial structure interval of hexagonal array and disc diameter is 1 ~ 100: 1;
when the discontinuous artificial structure is a discontinuous square disc structure, the ratio of the distance between the artificial structures of the hexagonal array to the side length of the square disc is 1-100: 1.
9. the method of claim 1, wherein the material having electric dipole property is organic ferroelectric material or inorganic ferroelectric material.
10. The method of claim 9, wherein the organic ferroelectric material is polyvinylidene fluoride; the inorganic ferroelectric material is ABO3Any one of type double oxide crystals, hydrogen-containing crystals, or lead-containing crystals.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147860A (en) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | Fabrication of patterned poled dielectric structures and devices |
| JP2006147774A (en) * | 2004-11-18 | 2006-06-08 | Seiko Epson Corp | Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus |
| US20130149500A1 (en) * | 2011-12-06 | 2013-06-13 | Nazanin Bassiri-Gharb | Soft-template infiltration manufacturing of nanomaterials |
| CN103885190A (en) * | 2014-04-11 | 2014-06-25 | 北京交通大学 | Manufacturing method of submicron photonic crystal phase array light beam splitter |
| CN108875225A (en) * | 2018-06-25 | 2018-11-23 | 西安交通大学 | Regulation method for insulator and its surface field in GIS/GIL |
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- 2019-12-04 CN CN201911228539.1A patent/CN111029255B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147860A (en) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | Fabrication of patterned poled dielectric structures and devices |
| JP2006147774A (en) * | 2004-11-18 | 2006-06-08 | Seiko Epson Corp | Ferroelectric memory and its manufacturing method, ferroelectric memory device and its manufacturing method, and electronic apparatus |
| US20130149500A1 (en) * | 2011-12-06 | 2013-06-13 | Nazanin Bassiri-Gharb | Soft-template infiltration manufacturing of nanomaterials |
| CN103885190A (en) * | 2014-04-11 | 2014-06-25 | 北京交通大学 | Manufacturing method of submicron photonic crystal phase array light beam splitter |
| CN108875225A (en) * | 2018-06-25 | 2018-11-23 | 西安交通大学 | Regulation method for insulator and its surface field in GIS/GIL |
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