CN111016231A - PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof - Google Patents
PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof Download PDFInfo
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- CN111016231A CN111016231A CN201911327702.XA CN201911327702A CN111016231A CN 111016231 A CN111016231 A CN 111016231A CN 201911327702 A CN201911327702 A CN 201911327702A CN 111016231 A CN111016231 A CN 111016231A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 100
- 229920001343 polytetrafluoroethylene Polymers 0.000 title claims abstract description 100
- 239000004810 polytetrafluoroethylene Substances 0.000 title claims abstract description 100
- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 25
- 238000007514 turning Methods 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 238000007873 sieving Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 76
- 239000000843 powder Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 239000000047 product Substances 0.000 claims description 7
- 239000011265 semifinished product Substances 0.000 claims description 6
- 229920000295 expanded polytetrafluoroethylene Polymers 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000005360 mashing Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- 238000004891 communication Methods 0.000 abstract description 9
- 239000011889 copper foil Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004744 fabric Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 239000000839 emulsion Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
- B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
- B29K2027/18—PTFE, i.e. polytetrafluorethene, e.g. ePTFE, i.e. expanded polytetrafluorethene
Abstract
The invention relates to a PTFE ceramic film for a 5G network high-performance copper-clad plate and a processing method thereof, wherein the method comprises the following steps: (1) sieving raw materials, (2) manufacturing blanks, (3) sintering the blanks, (4) turning or rotary cutting, and (5) cutting films. The PTFE ceramic film is obtained by turning a PTFE ceramic blank, and the thickness of the film is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the film is 1050 mm or more and 1300 mm or less. The copper foil has stable dielectric property, low dielectric loss, extremely low water absorption, CTE (coefficient of thermal expansion) value close to that of a copper foil, excellent dimensional stability and good peel strength resistance of the copper foil. The invention improves the thermal expansion coefficient, can eliminate the risk of copper fracture, and the thickness and the enough width of the PTFE ceramic film can meet the processing requirements of 5G communication on high-frequency and high-speed copper-clad plates.
Description
Technical Field
The invention relates to the technical field of wireless communication, in particular to a PTFE (polytetrafluoroethylene) ceramic film for a 5G network high-performance copper-clad plate and a processing method thereof.
Background
With the development and popularization of the fifth generation mobile communication technology (5G), the vision of everything interconnection, automatic driving, intelligent society and the like changing the life style of people is coming closer and closer. The 5G communication technology adopts a millimeter wave band, and the shorter the wavelength of the electromagnetic wave is, the poorer the diffraction capability thereof is, and the greater the attenuation of the electromagnetic wave in the transmission process is, which results in the poorer interference resistance of the signal in the transmission process. Therefore, the laying density of the 5G communication base stations is increased by a certain amount compared with that of the 4G base stations, so as to ensure the strength of the 5G signals and the stability of signal transmission. Meanwhile, 5G communication also puts forward more strict requirements on copper-clad plate materials, some American enterprises apply PTFE materials to the production of high-frequency copper-clad plates in the early 50 s, and through the development of nearly 60 years, the manufacturing and forming processes of PTFE-based high-frequency copper-clad plates are diversified, so that the requirements of different customers in different fields are met. Since the PTFE/ceramic microwave composite dielectric substrate material has excellent high-frequency low-loss characteristics and stable dielectric constant, the PTFE/ceramic microwave composite dielectric substrate material is always applied to the communication fields of military industry, aerospace, aviation and the like, and since the last 90 th century, with the development of civil radio frequency communication technology, PTFE is also beginning to be applied to base station antennas, automobile radars, various radio frequency devices and the like in large quantities, and the market demand of the PTFE/ceramic microwave composite dielectric substrate material is increased year by year.
At present, the mainstream PTFE copper-clad plate in the domestic market is generally a glass cloth reinforced PTFE copper-clad plate without filler, the PTFE/ceramic filled copper-clad plate is divided into a copper-clad plate with glass cloth reinforcement and a copper-clad plate without glass cloth reinforcement, and the molding process adopted by the PTFE/ceramic filled copper-clad plate is different due to different structures: (1) the PTFE/ceramic material reinforced by the glass cloth is prepared by coating PTFE emulsion containing ceramic powder on glass fiber cloth by adopting an impregnation method, and because the PTFE emulsion is a polymer with very low surface polarity, the surface polarity of the ceramic powder is very high, the density of the ceramic powder is larger than that of the emulsion, the ceramic powder is easy to precipitate in the impregnation process, a dispersing agent, a coupling agent and the like are required to be added, the ceramic powder is easy to aggregate in the sintering process, so that the finally prepared PTFE/ceramic cloth has uneven electrical property, and the high-frequency circuit board cannot be normally used due to the difference of dielectric constants and thermal expansibility at different positions; (2) the PTFE/ceramic material without glass cloth reinforcement is made into a ceramic-containing filler material by adopting an extrusion rolling method, and because the PTFE/ceramic material is difficult to process, a coupling agent is grafted on the surface of the inorganic ceramic, and other auxiliary agents are added in the production process, even if the process cannot prepare a product with thinner and wider size, the requirement of mass production cannot be met, and the practicability is very low.
Disclosure of Invention
The invention aims to provide a PTFE ceramic film for a 5G network high-performance copper-clad plate with stable dielectric property and lower dielectric loss and a processing method thereof.
The purpose of the invention is realized by adopting the following technical scheme:
a processing method of a PTFE ceramic film for a 5G network high-performance copper-clad plate comprises the following steps:
(1) sieving raw materials: sieving the nanoscale ceramic powder through a 150-mesh vibrating screen, mixing the nanoscale ceramic powder with pure PTFE fine powder sieved through a 60-mesh vibrating screen, then mashing, mixing and stirring the mixture through a high-speed mixer, and then sieving the mixture through a 60-mesh vibrating screen to obtain a PTFE ceramic mixture;
(2) blank preparation: preparing the PTFE ceramic mixture into a hollow cylindrical blank by a mould pressing method, demolding the blank, and placing the demolded blank in an environment at 23-25 ℃ for 20-24 hours at constant temperature to eliminate the internal stress of the blank;
(3) and (3) blank sintering: placing the blank obtained in the step (2) into a full-automatic rotary tetrafluoro sintering furnace, sintering according to a set program, controlling the sintering time to be 72-168 hours, and cooling to obtain a blank;
(4) turning or rotary cutting: putting the blank obtained in the step (3) into an oven at 100-120 ℃ for preheating, keeping the temperature for 5-6 hours, pressing or pulling a special core rod with trapezoidal teeth on the outer surface into a central hole of the blank after the inner temperature and the outer temperature of the blank are consistent, installing the special core rod on a high-precision numerical control lathe or a rotary cutter by using a crane, and turning or rotary cutting the blank by using a hard alloy cutter according to the thickness of a set film to obtain a PTFE ceramic film semi-finished product;
(5) and (3) detecting a thin film: inspecting and measuring the PTFE ceramic film semi-finished product obtained in the step (4), and removing defective products;
(6) cutting the film: and (5) installing the PTFE ceramic film meeting the thickness and width detection requirements in the step (5) on a special numerical control transverse cutting machine, and cutting into PTFE ceramic film finished products with specified length and width.
As a preferred technical scheme of the invention, the addition amount of the nano-scale ceramic powder in the step (1) accounts for 2-20% of the total weight.
As a preferred technical scheme of the invention, the maximum diameter of the blank in the step (2) is determined by the width of the film to be cut, and when the width of the film is 1280 mm, the maximum diameter of the blank is 500 mm.
As a preferable technical scheme of the invention, the thickness of the film obtained by turning or rotary cutting in the step (4) is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the film is 1050 mm or more and 1300 mm or less.
In a preferred embodiment of the present invention, the dielectric constant (. epsilon.r) of the PTFE ceramic film obtained in the step (5) is 2.5 to 10.2 at a high frequency of 10G to 30 GHz.
In a preferred embodiment of the present invention, the dielectric loss tangent (tan δ) of the PTFE ceramic film is 0.001 to 0.005.
A PTFE ceramic film for a 5G network high-performance copper-clad plate is obtained by turning or rotary cutting a PTFE hollow blank containing nano-scale ceramic powder, wherein the thickness of the PTFE ceramic film is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the PTFE ceramic film is more than or equal to 1050 mm and less than or equal to 1300 mm.
In a preferred embodiment of the present invention, the dielectric constant (ε r) of the PTFE ceramic film is 2.5 to 10.2 at a high frequency of 10G to 30 GHz.
In a preferred embodiment of the present invention, the dielectric loss tangent (tan δ) of the PTFE ceramic film is 0.001 to 0.005.
In a preferred embodiment of the present invention, the PTFE hollow preform has a diameter of 500 mm, and the PTFE ceramic membrane has a width of 1280 mm.
The invention has the beneficial effects that: compared with the prior art, the compatible nano-scale ceramic powder is sieved and mixed with the sieved pure PTFE fine powder through a high-speed mixer to obtain a PTFE ceramic mixture; and carrying out compression molding on the mixture, sintering to obtain a blank, and turning the blank to obtain the PTFE ceramic film.
Compared with the glass fiber cloth coated with ceramic powder PTFE emulsion by the traditional dipping method and the ceramic PTFE filler-containing film manufactured by the extrusion rolling method, the invention has the advantages of stable dielectric property, lower dielectric loss, extremely low water absorption, CTE (coefficient of thermal expansion) value close to that of copper foil, excellent dimensional stability and good copper foil peel strength resistance. The invention improves the thermal expansion coefficient, can eliminate the risk of copper fracture, and the thickness and the enough width of the PTFE ceramic film can meet the processing requirements of 5G communication on high-frequency and high-speed copper-clad plates.
The PTFE ceramic film obtained by the processing method has the thickness of 0.02 mm to 0.5 mm, and the thickness tolerance value is less than 0.5 percent; a width of between 1050 millimeters and 1300 millimeters; a length of between 1270 and 2000 millimeters; the dielectric constant (epsilon r) at a high frequency of 10-30 GHz is between 2.5 and 10.2, the dielectric loss tangent (tan delta) is between 0.001 and 0.005, and performance indexes such as passive intermodulation and the like are greatly improved.
Drawings
FIG. 1 is a schematic structural view of a hollow PTFE ceramic billet according to the present invention;
FIG. 2 is a schematic view of the structure of the thin film obtained by turning the blank of the present invention.
In the figure: 1. PTFE blank, 2, a central hole, 3 and a PTFE ceramic film.
Detailed Description
The invention will be further described with reference to the following detailed description of embodiments and with reference to the accompanying drawings in which:
a processing method of a PTFE ceramic film for a 5G network high-performance copper-clad plate comprises the following steps:
(1) sieving raw materials: sieving the nanoscale ceramic powder through a 150-mesh vibrating screen, mixing the nanoscale ceramic powder with pure PTFE fine powder sieved through a 60-mesh vibrating screen, then mashing, mixing and stirring the mixture through a high-speed mixer, and then sieving the mixture through a 60-mesh vibrating screen to obtain a PTFE ceramic mixture;
(2) blank preparation: preparing the PTFE ceramic mixture into a hollow cylindrical blank by a mould pressing method, demolding the blank, and placing the demolded blank in an environment at 23-25 ℃ for 20-24 hours at constant temperature to eliminate the internal stress of the blank;
(3) and (3) blank sintering: placing the blank obtained in the step (2) into a full-automatic rotary tetrafluoro sintering furnace, sintering according to a set program, controlling the sintering time to be 72-168 hours, and cooling to obtain a blank;
(4) turning or rotary cutting: putting the blank obtained in the step (3) into an oven at 100-120 ℃ for preheating, keeping the temperature for 5-6 hours, pressing or pulling a special core rod with trapezoidal teeth on the outer surface into a central hole of the blank after the inner temperature and the outer temperature of the blank are consistent, installing the special core rod on a high-precision numerical control lathe or a rotary cutter by using a crane, and turning or rotary cutting the blank by using a hard alloy cutter according to the thickness of a set film to obtain a PTFE ceramic film semi-finished product;
(5) and (3) detecting a thin film: inspecting and measuring the PTFE ceramic film semi-finished product obtained in the step (4), and removing defective products;
(6) cutting the film: and (5) installing the PTFE ceramic film meeting the thickness and width detection requirements in the step (5) on a special numerical control transverse cutting machine, and cutting into PTFE ceramic film finished products with specified length and width.
In this embodiment, the addition amount of the nanoscale ceramic powder in step (1) accounts for 2-20% of the total weight; the maximum diameter of the blank in the step (2) is determined by the width of the film to be cut, and when the width of the film is 1280 mm, the maximum diameter of the blank is 500 mm. The thickness of the film obtained by turning or rotary cutting in the step (4) is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the film is greater than or equal to 1050 mm and less than or equal to 1300 mm; the dielectric constant (epsilon r) of the PTFE ceramic film obtained in the step (5) is between 2.5 and 10.2 at the high frequency of 10G to 30 GHz; the dielectric loss tangent (tan delta) of the PTFE ceramic film is between 0.001 and 0.005, and performance indexes such as passive intermodulation and the like are greatly improved.
As shown in fig. 1 and fig. 2, a PTFE ceramic film for a 5G network high-performance copper-clad plate is obtained by turning or rotary cutting a PTFE blank 1 containing nano-scale ceramic powder, wherein the PTFE blank 1 is a hollow cylindrical structure, and a central hole 2 is formed in the axis of the PTFE blank 1; the thickness of the PTFE ceramic film 3 obtained by turning or rotary cutting is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the PTFE ceramic film 3 is more than or equal to 1050 mm and less than or equal to 1300 mm.
In the embodiment, the dielectric constant (epsilonr) of the PTFE ceramic film 3 at a high frequency of 10-30 GHz is between 2.5 and 10.2; the dielectric loss tangent (tan delta) of the PTFE ceramic film is between 0.001 and 0.005; when the diameter of the PTFE blank 1 is 500 mm and the width of the PTFE ceramic film 3 is 1280 mm, the thickness of the PTFE ceramic film 3 is more than or equal to 0.05 mm and less than or equal to 0.20 mm.
The invention overcomes the defects of the prior art, and directly adds nano-scale ceramic powder into PTFE fine powder, and the PTFE ceramic film is obtained by smashing, mixing, stirring, sieving, pressing into a blank, sintering, turning and cutting. The invention has stable dielectric property and lower dielectric loss; extremely low water absorption; CTE values close to copper foil; excellent dimensional stability of the sheet; good peel strength of the copper foil; the thermal expansion coefficient of the material is improved, and the risk of copper fracture can be eliminated; the PTFE ceramic film has the thickness and the enough width which can meet the processing requirements of 5G communication on high-frequency and high-speed copper-clad plates.
The above examples are only for illustrating the concept and technical features of the present invention, and are intended to enable those skilled in the art to understand the technical scheme and implementation manner of the present invention, and the protection scope of the present invention is not limited thereby. All equivalents and changes equivalent to the technical solution of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A processing method of PTFE ceramic film for a 5G network high-performance copper-clad plate is characterized by comprising the following steps:
(1) sieving raw materials: sieving the nanoscale ceramic powder through a 150-mesh vibrating screen, mixing the nanoscale ceramic powder with pure PTFE fine powder sieved through a 60-mesh vibrating screen, then mashing, mixing and stirring the mixture through a high-speed mixer, and then sieving the mixture through a 60-mesh vibrating screen to obtain a PTFE ceramic mixture;
(2) blank preparation: preparing the PTFE ceramic mixture into a hollow cylindrical blank by a mould pressing method, demolding the blank, and placing the demolded blank in an environment at 23-25 ℃ for 20-24 hours at constant temperature to eliminate the internal stress of the blank;
(3) and (3) blank sintering: placing the blank obtained in the step (2) into a full-automatic rotary tetrafluoro sintering furnace, sintering according to a set program, controlling the sintering time to be 72-168 hours, and cooling to obtain a blank;
(4) turning or rotary cutting: putting the blank obtained in the step (3) into an oven at 100-120 ℃ for preheating, keeping the temperature for 5-6 hours, pressing or pulling a special core rod with trapezoidal teeth on the outer surface into a central hole of the blank after the inner temperature and the outer temperature of the blank are consistent, installing the special core rod on a high-precision numerical control lathe or a rotary cutter by using a crane, and turning or rotary cutting the blank by using a hard alloy cutter according to the thickness of a set film to obtain a PTFE ceramic film semi-finished product;
(5) and (3) detecting a thin film: inspecting and measuring the PTFE ceramic film semi-finished product obtained in the step (4), and removing defective products;
(6) cutting the film: and (5) installing the PTFE ceramic film meeting the thickness and width detection requirements in the step (5) on a special numerical control transverse cutting machine, and cutting into PTFE ceramic film finished products with specified length and width.
2. The processing method of the PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 1, which is characterized in that: the addition amount of the nano-scale ceramic powder in the step (1) accounts for 2-20% of the total weight.
3. The processing method of the PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 1, which is characterized in that: the maximum diameter of the blank in the step (2) is determined by the width of the film to be cut, and when the width of the film is 1280 mm, the maximum diameter of the blank is 500 mm.
4. The processing method of the PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 1, which is characterized in that: the thickness of the film obtained by turning or rotary cutting in the step (4) is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the film is 1050 mm or more and 1300 mm or less.
5. The processing method of the PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 1, which is characterized in that: the dielectric constant (epsilon r) of the PTFE ceramic film obtained in the step (5) is between 2.5 and 10.2 at a high frequency of 10G to 30 GHz.
6. The processing method of the PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 5, which is characterized in that: the dielectric loss tangent (tan delta) of the PTFE ceramic film is between 0.001 and 0.005.
7. The PTFE ceramic film for the 5G network high-performance copper-clad plate obtained by the processing method of any one of claims 1 to 6 is characterized in that: the PTFE ceramic film is obtained by turning or rotary cutting a PTFE hollow blank containing nano-scale ceramic powder, and the thickness of the PTFE ceramic film is more than or equal to 0.02 mm and less than or equal to 0.50 mm; the width of the PTFE ceramic film is more than or equal to 1050 mm and less than or equal to 1300 mm.
8. The PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 7, which is characterized in that: the dielectric constant (epsilonr) of the PTFE ceramic film is between 2.5 and 10.2 at a high frequency of 10G-30 GHz.
9. The PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 7, which is characterized in that: the dielectric loss tangent (tan delta) of the PTFE ceramic film is between 0.001 and 0.005.
10. The PTFE ceramic film for the 5G network high-performance copper-clad plate according to claim 7, which is characterized in that: the diameter of the PTFE hollow blank is 500 mm, and the width of the PTFE ceramic film is 1280 mm.
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Cited By (6)
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| CN111574794A (en) * | 2020-05-15 | 2020-08-25 | 浙江科赛新材料科技有限公司 | High-dielectric-constant polytetrafluoroethylene film and preparation method and application thereof |
| CN111823619A (en) * | 2020-06-24 | 2020-10-27 | 腾辉电子（苏州）有限公司 | Preparation method of PTFE composite material film, PTFE film and copper-clad plate using PTFE film |
| CN111844824A (en) * | 2020-06-24 | 2020-10-30 | 腾辉电子（苏州）有限公司 | Preparation method of PTFE composite material sheet, PTFE composite material sheet and copper-clad plate using PTFE composite material sheet |
| CN111976164A (en) * | 2020-06-24 | 2020-11-24 | 腾辉电子（苏州）有限公司 | Preparation method of polytetrafluoroethylene-based metal substrate and metal substrate |
| CN113174076A (en) * | 2021-06-01 | 2021-07-27 | 江苏旭氟新材料有限公司 | Preparation method of PTFE composite film with high dielectric constant |
| CN113214582A (en) * | 2021-06-01 | 2021-08-06 | 江苏旭氟新材料有限公司 | Preparation process of PTFE (polytetrafluoroethylene) film with spherical ceramic powder as filler |
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