CN113174076A - Preparation method of PTFE composite film with high dielectric constant - Google Patents
Preparation method of PTFE composite film with high dielectric constant Download PDFInfo
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- CN113174076A CN113174076A CN202110610628.3A CN202110610628A CN113174076A CN 113174076 A CN113174076 A CN 113174076A CN 202110610628 A CN202110610628 A CN 202110610628A CN 113174076 A CN113174076 A CN 113174076A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/18—Homopolymers or copolymers of tetrafluoroethylene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
Abstract
The invention discloses a preparation method of a PTFE composite film with a high dielectric constant, which comprises the following components in percentage by mass: 30-70% of ceramic powder and 70-30% of PTFE resin dry powder; the method specifically comprises the following steps: mechanical mixing: ceramic powder and PTFE resin dry powder are selected to be added into a mixer and fully mixed for 2-8h to obtain composite powder; the molding process comprises the following steps: putting the mixed composite powder into a die, and pre-forming the composite powder into a cylindrical blank under the pressure of 10-50 MPa; storing the demolded blank in an environment at 35-65 ℃ for 10-24 h; the sintering process comprises the following steps: placing the cylindrical blank into a sintering furnace, and preserving heat for 2-10 days at the temperature of 360-390 ℃; preheating the cylindrical blank in a baking oven at 80-150 deg.C, maintaining the temperature for 2-5h, and turning or rotary cutting the blank with a hard alloy cutter according to the thickness of the film to obtain a film material with a thickness of 10-100 μm.
Description
Background
With the rapid development of information technology, it is increasingly difficult for traditional materials to meet the requirements of electronic products such as light weight, high speed of signal transmission, high frequency bandwidth and the like. The PTFE resin has excellent and stable microwave performance due to the special molecular structure, the relative dielectric constant is about 2.1, and the dielectric loss is 10–4The order of magnitude is that the product can be used for a long time at 180-260 ℃; the high dielectric constant PTFE film has the characteristics of higher dielectric constant, and is matched with a dipping sheet for use, so that the size of the circuit board is favorably reduced; the dielectric constant of the conventional film is mainly in the range of 2.1-3.0, and the relative dielectric constant isThe PTFE composite film with the constant of 6.0-12.0 has not been reported.
Disclosure of Invention
The invention provides a preparation method of a PTFE composite film with a high dielectric constant.
A preparation method of a PTFE composite film with a high dielectric constant comprises the following components in percentage by mass:
30-70% of ceramic powder and 70-30% of PTFE resin dry powder;
the method specifically comprises the following steps:
s1 mechanical mixing: selecting ceramic powder and PTFE resin dry powder according to mass percent, adding the ceramic powder and the PTFE resin dry powder into a mixer, and fully mixing for 2-8 hours to obtain composite powder;
s2 forming process: putting the mixed composite powder into a die, and pre-forming the composite powder into a cylindrical blank under the pressure of 10-50 MPa; storing the demolded blank in an environment at 35-65 ℃ for 10-24h to eliminate the internal stress of the blank;
s3 sintering process: placing the cylindrical blank into a sintering furnace, and preserving heat for 2-10 days at the temperature of 360-390 ℃;
s4 turning to form a film: and (3) preheating the cylindrical blank obtained in the step (S3) in an oven at the temperature of 80-150 ℃, keeping the temperature for 2-5 hours to ensure that the inner temperature and the outer temperature of the blank are consistent, and turning or rotary cutting the blank by using a hard alloy cutter according to the thickness of a set film to form a film material with the thickness of 10-100 mu m.
As a preferred technical solution of the present invention, further, in the preparation method of the PTFE composite film with high dielectric constant, the ceramic powder is TiO2Oxide ceramic powder.
Compared with the prior art, the invention adopts the mixing of titanium dioxide ceramic powder and PTFE dry powder in different proportions, because the relative dielectric constant of the titanium dioxide ceramic powder is 110, the relative dielectric constant of the PTFE is 2.1, the dielectric constant of the composite material is controlled by adjusting the proportion of the titanium dioxide ceramic powder; PTFE composite films with dielectric constants (Dk) of 6.0-12.0 are prepared by mixing, die pressing, sintering, turning and other processes according to different proportions, and have excellent temperature characteristics and lower loss factors at high frequency of more than 10 GHz.
Drawings
FIG. 1 is a process flow diagram of the preparation method of the high dielectric constant PTFE composite film designed by the present invention.
Detailed Description
Example 1
The embodiment provides a preparation method of a PTFE composite film with a high dielectric constant, which comprises the following specific steps:
mixing process
Selecting 30% of ceramic powder and 70% of PTFE resin dry powder according to mass percent, and fully mixing for 8 hours; the ceramic powder is TiO2Oxide ceramic powder;
molding process
Putting the mixed composite powder into a die, and pre-forming a cylindrical blank under the pressure of 10 MPa; storing the demolded blank in an environment at 45 ℃ for 20 hours to eliminate the internal stress of the blank;
sintering process
Putting the cylindrical blank into a sintering furnace, and preserving heat for 7 days at 380 ℃;
turning into film
The cylindrical blank is put into a 120 ℃ oven for preheating, the temperature is kept for 3 hours, after the inner temperature and the outer temperature of the blank are consistent, the blank is turned by a hard alloy cutter according to the thickness of a set film to form a film material with the thickness of 50 mu m, and the dielectric constant of the prepared film is 6.0.
Example 2
Mixing process
Selecting 50% of ceramic powder and 50% of PTFE resin dry powder according to mass percent, and fully mixing for 2 h; the ceramic powder is TiO2Oxide ceramic powder;
molding process
Putting the mixed composite powder into a die, and pre-forming a cylindrical blank under the pressure of 30 MPa; storing the demolded blank in an environment at 35 ℃ for 24 hours to eliminate the internal stress of the blank;
sintering process
Putting the cylindrical blank into a sintering furnace, and preserving heat for 9 days at 360 ℃;
turning into film
Preheating the cylindrical blank in a 150 deg.C oven, maintaining the temperature for 2h to make the inner and outer temperatures of the blank consistent, rotary cutting the blank with a hard alloy cutter according to the thickness of the film to obtain a film material with a thickness of 100 μm, and making the dielectric constant of the film to be 10.0.
Example 3
Mixing process
Selecting 70% of ceramic powder and 30% of PTFE resin dry powder according to mass percentage, and fully mixing for 6 h; the ceramic powder is TiO2Oxide ceramic powder;
molding process
Putting the mixed composite powder into a die, and pre-forming a cylindrical blank under the pressure of 50 MPa; storing the demolded blank in an environment at 65 ℃ for 10h to eliminate the internal stress of the blank;
sintering process
Putting the cylindrical blank into a sintering furnace, and preserving heat for 2 days at 390 ℃;
turning into film
The cylindrical blank is put into an oven at 80 ℃ for preheating, the temperature is kept for 5 hours, after the inner temperature and the outer temperature of the blank are consistent, the blank is turned by a hard alloy cutter according to the thickness of a set film to form a film material with the thickness of 10 mu m, and the dielectric constant of the prepared film is 12.0.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.
Claims (2)
1. A preparation method of a PTFE composite film with a high dielectric constant is characterized by comprising the following steps: the PTFE composite film comprises the following components in percentage by mass:
30-70% of ceramic powder and 70-30% of PTFE resin dry powder;
the method specifically comprises the following steps:
s1 mechanical mixing:
according to the mass percentage, ceramic powder and PTFE resin dry powder are selected and added into a mixer, and are fully mixed for 2-8 hours to obtain composite powder;
s2 forming process: putting the mixed composite powder into a die, and pre-forming the composite powder into a cylindrical blank under the pressure of 10-50 MPa; storing the demolded blank in an environment at 35-65 ℃ for 10-24h to eliminate the internal stress of the blank;
s3 sintering process: placing the cylindrical blank into a sintering furnace, and preserving heat for 2-10 days at the temperature of 360-390 ℃;
s4 turning to form a film: and (3) preheating the cylindrical blank obtained in the step (S3) in an oven at the temperature of 80-150 ℃, keeping the temperature for 2-5 hours to ensure that the inner temperature and the outer temperature of the blank are consistent, and turning or rotary cutting the blank by using a hard alloy cutter according to the thickness of a set film to form a film material with the thickness of 10-100 mu m.
2. The method for preparing the high dielectric constant PTFE composite film according to claim 1, wherein: the ceramic powder is TiO2Oxide ceramic powder.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107311517A (en) * | 2017-06-29 | 2017-11-03 | 安徽升鸿电子有限公司 | The method that Dk ＞ 10 copper-clad plate base material is made using turning mode |
| CN109760384A (en) * | 2018-12-24 | 2019-05-17 | 嘉兴佳利电子有限公司 | A kind of preparation method of high dielectric constant composite laminate |
| CN110372369A (en) * | 2018-04-13 | 2019-10-25 | 中国科学院上海硅酸盐研究所 | One kind having Gao Jie, low-loss PTFE/CLST composite dielectric materials and preparation method thereof |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN111016231A (en) * | 2019-12-20 | 2020-04-17 | 江苏泰氟隆科技有限公司 | PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof |
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2021
- 2021-06-01 CN CN202110610628.3A patent/CN113174076A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107311517A (en) * | 2017-06-29 | 2017-11-03 | 安徽升鸿电子有限公司 | The method that Dk ＞ 10 copper-clad plate base material is made using turning mode |
| CN110372369A (en) * | 2018-04-13 | 2019-10-25 | 中国科学院上海硅酸盐研究所 | One kind having Gao Jie, low-loss PTFE/CLST composite dielectric materials and preparation method thereof |
| CN109760384A (en) * | 2018-12-24 | 2019-05-17 | 嘉兴佳利电子有限公司 | A kind of preparation method of high dielectric constant composite laminate |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN111016231A (en) * | 2019-12-20 | 2020-04-17 | 江苏泰氟隆科技有限公司 | PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof |
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Application publication date: 20210727 |