CN110995043B - Converter and control method thereof - Google Patents

Converter and control method thereof Download PDF

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Publication number
CN110995043B
CN110995043B CN201911268468.8A CN201911268468A CN110995043B CN 110995043 B CN110995043 B CN 110995043B CN 201911268468 A CN201911268468 A CN 201911268468A CN 110995043 B CN110995043 B CN 110995043B
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power module
switch device
semiconductor switch
voltage
controlling
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CN110995043A (en
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王武华
许亚明
常伟
童炎
周党生
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Shenzhen Hopewind Electric Co Ltd
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Shenzhen Hopewind Electric Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current

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  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The control method of the converter comprises the steps that when the voltage difference between an alternating current output port and a direct current midpoint is switched between a preset voltage and a first voltage and the current direction flows from the alternating current output port to a bridge arm circuit, and/or when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction flows from the bridge arm circuit to the alternating current output port, the working state of a semiconductor switch device in the bridge arm circuit is controlled so that the current flowing paths in the bridge arm circuit are switched inside the same power module. According to the power module switching control method and device, the current flowing paths in the bridge arm circuits are controlled to be switched in the same power module, parasitic inductance of the current conversion paths and turn-off peak voltage borne by the semiconductor switch device in the turn-off process are reduced, the service life of the semiconductor switch device is prolonged, and the operation reliability and capacity of the converter are improved.

Description

Converter and control method thereof
Technical Field
The application relates to the technical field of power electronics, in particular to a converter and a control method thereof.
Background
In 1980, the university of Changga science and technology of Japan A.Nabae et al proposed a diode Neutral Point Clamped (NPC) topology converter in the IEEE-IAS annual meeting. As shown in fig. 1, the NPC topology adopts a two-segment bus serial connection mode, so that the bus voltage and the ac output voltage can be increased, and the switching loss of the semiconductor switching device can be reduced; therefore, the NPC topology is widely used, and semiconductor manufacturers continuously develop semiconductor power modules based on the NPC topology. In addition, because of the limitation of packaging and parasitic inductance, the power of an integrated NPC semiconductor power module is generally small, and a large amount of two-level semiconductor power modules used in the market have large capacity and low price, so that converter manufacturers generally build a converter of an NPC topology through the two-level semiconductor power modules.
As shown in fig. 2, fig. 2 is an internal circuit of a two-level semiconductor power module including two semiconductor switching devices S1 and S2, and two diode devices D1 and D2. Fig. 3 shows a scheme of building a converter of an NPC topology through a two-level semiconductor power module, wherein PM1: S1 (represents a semiconductor switching device S1 in a two-level semiconductor power module PM1, and is similar below), PM1: D1, PM1: S2, PM1: D2 are built through the two-level semiconductor power module PM1, PM2: S1, PM2: D1, PM2: S2, PM2: D2 are built through the two-level semiconductor power module PM2, and PM3: S1, PM3: D1, PM3: S2, PM3: D2 are built through the two-level semiconductor power module PM 3.
When the two-level semiconductor power module is applied to the NPC topology, the parasitic parameters of the commutation path can be greatly increased, the semiconductor switch device can bear turn-off voltage in the turn-off process, the turn-off spike voltage is related to the turn-off current and the parasitic inductance of the commutation loop (the turn-off current is larger, the turn-off spike voltage is larger, the parasitic inductance of the commutation loop is larger, the turn-off spike voltage is larger), and the turn-off spike voltage of the semiconductor switch device can be increased due to the larger turn-off current and the parasitic inductance of the commutation loop. The turn-off peak voltage of the semiconductor switching device rises, so that the semiconductor switching device is damaged or the service life of the semiconductor switching device is reduced, the operation reliability of the converter is reduced, and the capacity of the converter is limited.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a converter and a control method thereof, so as to solve the problem that a semiconductor switching device will bear a large turn-off spike voltage during turn-off due to a large parasitic inductance of a commutation path.
The technical scheme adopted by the application for solving the technical problems is as follows:
according to one aspect of the present application, a control method of a converter is provided, where the converter includes a dc positive port, a dc midpoint, a dc negative port, an ac output port, and a bridge arm circuit disposed between the dc positive port and the dc negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port;
the control method of the converter comprises the following steps:
when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the first voltage is equal to the direct current positive port voltage.
According to another aspect of the present application, a converter is provided, which includes a dc positive port, a dc midpoint, a dc negative port, an ac output port, and a bridge arm circuit disposed between the dc positive port and the dc negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port;
the converter further comprises a control unit;
the control unit is used for controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the flowing paths of the current in the bridge arm circuit to be switched in the same power module when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; and under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the second voltage is equal to the direct current negative port voltage.
According to the converter and the control method thereof, the working state of the semiconductor switch device in the bridge arm circuit is controlled so that the current flowing paths in the bridge arm circuit are switched in the same power module, the parasitic inductance of the current conversion path and the turn-off peak voltage borne by the semiconductor switch device in the turn-off process are reduced, the service life of the semiconductor switch device is prolonged, and the operation reliability and the capacity of the converter are improved.
Drawings
FIG. 1 is a schematic diagram of a diode midpoint clamping topology;
FIG. 2 is a schematic diagram of an internal circuit structure of a two-level semiconductor power module;
FIG. 3 is a schematic structural diagram of an NPC topological converter built through a two-level semiconductor power module;
fig. 4 is a schematic structural diagram of a current conversion path of an NPC topology converter;
fig. 5 is a schematic structural diagram of another existing commutation path of an NPC topology converter;
fig. 6 is a schematic diagram of a commutation path structure of a converter according to an embodiment of the present application;
fig. 7 is a schematic diagram of another commutation path structure of a converter according to an embodiment of the present application.
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
First embodiment
In order to better illustrate the embodiment of the present application, the following describes the control process of the existing NPC topology converter with reference to fig. 1 to 5:
as shown in fig. 3, the NPC topology converter includes a dc positive port P, a dc midpoint O, a dc negative port N, NPC bridge arm circuit, and an AC output port AC.
Two-level semiconductor power modules (PM 1-PM3 in the figure), each of which includes two semiconductor switching devices S1, S2, and two diodes D1, D2; each semiconductor switch device comprises a current input interface C, a current output interface E and a control interface G; each diode interface comprises a current input port A and a current output port K. For convenience of description, the following description will be made in the form of PMx: Sy, PMx: Dy, where x, y denote numbers, and PMx: Sy denotes a semiconductor switching device Sy in the two-level semiconductor power module PMx. For example: PM1: S1 denotes a semiconductor switching device S1 in the two-level semiconductor power module PM1, and PM1: D1 denotes a diode D1 in the two-level semiconductor power module PM 1. Further, PM1: S1: G denotes a control interface G of the semiconductor switching device S1 in the two-level semiconductor power module PM 1.
The semiconductor switching device Sy and the diode Dy, which have the same number, are connected in anti-parallel. Specifically, a current input interface C of the semiconductor switching device Sy is connected to a current output port K of the diode Dy, and a current output interface E of the semiconductor switching device Sy is connected to a current input port a of the diode Dy. After the anti-parallel connection, the current input interface C of the semiconductor switching device S1 is the 1 port of the two-level semiconductor power module PMx, the current output interface E of the semiconductor switching device S1 and the current input interface C of the semiconductor switching device S2 are connected to form the 2 port of the two-level semiconductor power module PMx, and the current output interface E of the semiconductor switching device S2 is the 3 port of the two-level semiconductor power module PMx.
The NPC bridge arm circuit comprises 3 two-level semiconductor power modules (namely x in PMx has values of 1, 2 and 3), a port 1 of PM1 is connected with a direct current positive port P, a port 2 of PM1 is connected with a port 1 of PM2, a port 3 of PM1 and a port 1 of PM3 are connected with a direct current midpoint O, a port 2 of PM2 is connected with an alternating current output port AC, a port 3 of PM2 is connected with a port 2 of PM3, a port 3 of PM3 is connected with a direct current negative port N, and control interfaces G (PM1: S1: G, PM1: S2: G, PM2: S1: G, PM2: S2: G, PM3: S1: G and PM3: S2: G) of all semiconductor switching devices are directly or indirectly connected with a control unit U1.
Voltage U of dc positive port P and dc midpoint OPO＝Udc+Voltage U of dc neutral point O and dc negative port NO(＝Udc-The voltage difference between the AC output port of the NPC bridge arm circuit and the DC midpoint O is UACOThe control unit U1 controls the on/off of the semiconductor switch device in the NPC bridge arm circuit and obtains the expected voltage difference U between the AC output port and the DC midpoint OACOIf the control signal sent by the control unit U1 to the semiconductor switching device is 1, it indicates that the semiconductor switching device is controlled to be on, and if the control signal is 0, it indicates that the semiconductor switching device is controlled to be off, the direction of the current flowing from the NPC bridge arm circuit to the AC output port is + and the direction of the current flowing from the AC output port to the NPC bridge arm circuit is-.
The converter can output U throughdc+、0、Udc-To simulate the output voltage, the conventional control method is to control PM1: S1, PM2: S1, PM2: S2, PM3: S2 to obtain the output of the converter, and the following table is an example of the output signal:
Figure BDA0002313515130000061
as shown in FIG. 4, when the modulation output voltage is 0 and Udc+When the current direction is "-", the states of the switching devices are PM1: S1 ═ 0, PM2: S1 ═ 1, PM2: S2 ═ 1, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 0, and the voltage difference U between the AC output port AC and the dc midpoint O is equal to UACO0, the current flow path is (shown by a solid line): AC → PM2: S2 → PM3: D1 → O, voltage difference U between AC output port AC and DC midpoint O of the next converterACOThe desired modulation is Udc+The switching device states sent by the control unit U1 of the converter are PM1: S1 ═ 0, PM2: S1 ═ 1, PM2: S2 ═ 0, PM3: S2 ═ 0, PM1: S2 ═ 0, PM1: S2 ═ 0, and the current flow path is (indicated by a dotted line in the figure): AC → PM2: D1 → PM1: D1 → P, at this time, the current path switches from (r) to (r), and the parasitic inductance of the path (r) is L1 and the parasitic inductance of the path (r) is L2 through the conversion among a plurality of semiconductor power modules. In the commutation process, the current i output by the AC output port is a constant value, and the current i flowing through the AC output port is a constant valueL1(t) the current i flowing through (i) increases with timeL2(t) decreases with time. These three currents have the following relationship.
iL1(t)+iL2(t)＝i，
Figure BDA0002313515130000062
The peak value of the voltage borne by the switching device PM2: S2 in the turn-off process is as follows:
VCE(PM2:S2)＝Udc++VL1+VL2，
Figure BDA0002313515130000063
Figure BDA0002313515130000064
Figure BDA0002313515130000071
therefore, the commutation time of the semiconductor switch device is not changed, the voltage peak value borne by the semiconductor switch device in the turn-off process is positively correlated with the magnitude of the turn-off current and the parasitic inductance of the commutation loop, and the larger the turn-off current is, the larger the voltage peak value borne by the semiconductor switch device in the turn-off process is, the larger the parasitic inductance is, and the larger the voltage peak value borne by the semiconductor switch device in the turn-off process is. Therefore, reducing the parasitic inductance L1, L2 of the inductance commutation loop or reducing the turn-off current i can reduce the spike voltage that the semiconductor switch device bears during the turn-off process.
Similarly, as shown in FIG. 5, when the modulation output voltage is at 0 and Udc-When the current direction is "+", the states of the switching devices are PM1: S1 ═ 0, PM2: S1 ═ 1, PM2: S2 ═ 1, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 0, and the voltage difference U between the AC output port AC and the dc midpoint O is equal to UACO0, the current flow path is (shown by a solid line): o → PM1: D2 → PM2: S1 → AC, voltage difference U between AC output port AC and DC midpoint O of the next converterACOThe desired modulation is Udc-The switching device states sent by the control unit U1 of the converter are PM1: S1 ═ 0, PM2: S1 ═ 0, PM2: S2 ═ 1, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 0, and the current flow path is (indicated by a dotted line in the figure): n → PM3: D2 → PM2: D2 → AC, in the process, PM2: S1 bears turn-off voltage, the magnitude of turn-off spike voltage is related to the parasitic inductance of a commutation path and the magnitude of current amplitude of an alternating current output end AC, and the larger the parasitic inductance of the commutation path is, the larger the turn-off voltage of PM2: S1 is; the larger the magnitude of the current at the AC output port AC, the larger the turn-off spike voltage experienced by the PM2: S1.
Based on the above analysis, a first embodiment of the present application provides a control method for a converter, where the converter includes a dc positive port, a dc midpoint, a dc negative port, an ac output port, and a bridge arm circuit disposed between the dc positive port and the dc negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; and the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port.
In this embodiment, the first power module, the second power module and the third power module may be the aforementioned two-level semiconductor power modules PM1, PM2 and PM3, respectively; or constructed using a single-tube semiconductor switching device, as will be understood with reference to fig. 3: the first power module may be composed of two single-tube semiconductor switching devices S1 (including D1), S2 (including D2).
For convenience of explanation, the two-level semiconductor power modules PM1, PM2, and PM3 will be described below as examples. The dc positive port, the dc neutral point, the dc negative port, and the ac output port are P, O, N, AC in fig. 3, the first power module is PM1, the first end of the first power module is denoted by reference numeral 1 in PM1, the second end of the first power module is denoted by reference numeral 2, the third end of the first power module is denoted by reference numeral 3, and the others are similar.
The control method of the converter comprises the following steps:
when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; and under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the second voltage is equal to the direct current negative port voltage.
In this embodiment, the preset voltage is 0 or other voltage value close to the midpoint of the bus, and is not limited herein.
In one embodiment, when the voltage difference between the ac output port and the dc midpoint is switched between a preset voltage and a first voltage, and the current direction is from the ac output port to the bridge arm circuit, controlling the operating state of the semiconductor switching device in the bridge arm circuit to switch the current flowing path in the bridge arm circuit within the same power module includes:
and controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be switched on, and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be switched off.
In this embodiment, after controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the first semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be switched on, and controlling the second semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be switched off.
In this embodiment, after controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off, the method further includes the steps of controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on, and
before controlling the first semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on and controlling the second semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the first semiconductor switch device in the second power module to be turned on, and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module, and the second semiconductor switch device in the third power module to be turned off.
In one embodiment, when the voltage difference between the ac output port and the dc midpoint is switched between the preset voltage and the second voltage, and the current direction is from the bridge arm circuit to the ac output port, controlling the operating state of the semiconductor switch device in the bridge arm circuit to switch the current flowing path in the bridge arm circuit inside the same power module includes:
and controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be switched on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be switched off.
In this embodiment, after controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be turned on and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be switched on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be switched off.
In this embodiment, the controlling of the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module is conducted, and after the controlling of the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module is turned off, the controlling of the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module are conducted, and
before controlling the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned on and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the second semiconductor switch device in the second power module to be turned on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module, the first semiconductor switch device in the third power module, and the second semiconductor switch device in the third power module to be turned off.
In order to better illustrate the embodiment of the present application, the following describes the control process of the NPC topology converter with reference to fig. 6 to 7:
the scheme of the application uses semiconductor devices PM1: S2 and PM3: S1 to share the current of the commutation process, and the voltage borne by semiconductor switches PM2: S2 and PM2: S1 in the turn-off process of the commutation process is reduced. The new control strategy is to control PM1: S1, PM2: S1, PM2: S2, PM3: S2, PM1: S2, PM3: S1 to obtain the output of the converter, and the following table is an example of the output signal:
Figure BDA0002313515130000111
as shown in FIG. 6, when the modulation output voltage is 0 and Udc+When the current direction is "-", the states of the switching devices are PM1: S1 ═ 0, PM2: S1 ═ 1, PM2: S2 ═ 0, PM3: S2 ═ 0, PM1: S2 ═ 1, PM3: S1 ═ 0, and the voltage difference U between AC and DC midpoint O is UACO0, the current flow path is (r): AC → PM2: D1 → PM1: S2 → O. The voltage difference U between the AC output port AC and the DC midpoint O is obtainedACOThe desired modulation is Udc+The states of the switching devices controlled by the converter are PM1: S1 ═ 0, PM2: S1 ═ 1, PM2: S2 ═ 0, PM3: S2 ═ 0, PM1: S2 ═ 0, and PM3: S1 ═ 0. In this case, the current commutation path is from (i) to (ii) (shown by a dotted line in the figure): AC → PM2: D1 → PM1: D1 → P commutation, which commutates inside the two-level semiconductor power module PM 1. The parasitic inductance between 1 and 2 of the two-level semiconductor power module PM1 is LPm12Parasitic inductance between 2 and 3 of PM1 is LPm25During the commutation process, the current i output from the AC output port is a constant value, and the current i flowing through PM1: D1Pm1:D1(t) increasing with time, a current i flowing through PM1: S2PM1:82(t) decreases with time. These three currents have the following relationship:
iPM1:D1(t)+iPM1:S2(t)＝i，
Figure BDA0002313515130000112
the peak voltage value borne by the semiconductor switch PM1: S2 in the turn-off process is as follows:
VCE(PM1:S2)＝Udc++VLPM12+VLPM23，
Figure BDA0002313515130000113
Figure BDA0002313515130000114
Figure BDA0002313515130000115
Figure BDA0002313515130000116
comparing the parasitic inductance and current rise rate of the commutation path of fig. 6 with that of fig. 4, one can obtain:
Figure BDA0002313515130000121
it can therefore be seen that the voltage spikes experienced by the PM1: S2 in the commutation path of figure 6 are less than the voltage spikes experienced by the PM2: S2 in the commutation path of figure 4:
VCE(PM1:S2)<VCE(PM2:S2)
in conclusion, the converter control method can reduce the voltage peak value borne by the semiconductor switch device in the conversion process, improve the reliability and the service life of the converter and increase the capacity of the converter.
Similarly, as shown in FIG. 7, whenModulating output voltage at 0 and Udc-When the current direction is "+", the states of the switching devices are PM1: S1 ═ 0, PM2: S1 ═ 0, PM2: S2 ═ 1, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 1, and the voltage difference UA between the AC output port AC and the dc midpoint O isCO0, the current flow path is (r): o → PM3: S1 → PM2: D2 → AC, voltage difference U between AC port of AC output port and DC midpoint O of the next converterACOThe desired modulation is Udc-The states of the converter control switching devices are PM1: S1 ═ 0, PM2: S1 ═ 0, PM2: S2 ═ 1, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 0, and the flowing path of the current is (indicated by a broken line in the figure): n → PM3: D2 → PM2: D2 → AC. At this time, the commutation path of the current commutates from (r) to (r), and the parasitic inductance value of the commutation path is much smaller than that of the commutation path shown in fig. 5, so the voltage spike value borne by the commutation process PM3: S1 in fig. 7 is smaller than that borne by the commutation process PM2: S1 in fig. 5.
In the implementation process of the scheme of the present application, the conduction of part of the semiconductor switching devices has no influence on the commutation path, and the effect of the scheme of the present application is not affected, such as:
1. when the modulation output voltage is between 0 and Udc+When the current transformer is changed, the switching state of the current transformer can be changed according to the control unit U1, wherein the voltage difference between AC and the direct current midpoint O is U1: S1 is 0, PM2: S1 is 1, PM2: S2 is 0, PM3: S2 is 0, PM1: S2 is 1, PM3: S1 is 1, and the voltage difference between AC and the direct current midpoint O is U1ACOIs 0, and does not influence the effect of the scheme of the application.
2. When the modulation output voltage is between 0 and Udc-When the current transformer is changed, the switching state of the current transformer can be changed according to the control unit U1, wherein the voltage difference between AC and the direct current midpoint O is U1: S1 is 0, PM2: S1 is 0, PM2: S2 is 1, PM3: S2 is 0, PM1: S2 is 1, PM3: S1 is 1, and the voltage difference between AC and the direct current midpoint O is U1ACOIs 0, and does not influence the effect of the scheme of the application.
3. When the modulation output voltage is between 0 and Udc+The converter switching state may also be, according to the control unit U1: PM1: S1 ═ 1, PM2: S1 ═ 1, PM2: S2 ═ 0, PM3: S2 ═ 0, PM1: S2 ═ 0, PM3: S1 ═ 1, and the voltage difference U between AC and DC midpoint OACOIs Udc+The effect of the scheme of the application is not affected.
4. When the modulation output voltage is between 0 and Udc-The converter switching state may also be, according to the control unit U1: PM1: S1 ═ 0, PM2: S1 ═ 0, PM2: S2 ═ 1, PM3: S2 ═ 1, PM1: S2 ═ 1, PM3: S1 ═ 0, and the voltage difference U between AC and DC midpoint OACOIs Udc-The effect of the scheme of the application is not affected.
Furthermore, when the NPC topological converter is built by using the single-tube semiconductor switching device, the parasitic inductance of the loop is large, and the turn-off peak voltage of the semiconductor switching device can also be influenced.
According to the control method of the converter, the working states of the semiconductor switch devices in the bridge arm circuits are controlled, so that the flowing paths of the currents in the bridge arm circuits are switched in the same power module, the parasitic inductance of the current conversion paths and the turn-off peak voltage borne by the semiconductor switch devices in the turn-off process are reduced, the service life of the semiconductor switch devices is prolonged, and the operation reliability and the capacity of the converter are improved.
Second embodiment
A second embodiment of the present application provides a converter, where the converter includes a dc positive port, a dc midpoint, a dc negative port, an ac output port, and a bridge arm circuit disposed between the dc positive port and the dc negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port;
the converter further comprises a control unit;
the control unit is used for controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the flowing paths of the current in the bridge arm circuit to be switched in the same power module when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; and under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the second voltage is equal to the direct current negative port voltage.
For the specific control process of the control unit, reference may be made to the foregoing description, which is not repeated herein.
According to the converter, the working state of the semiconductor switch device in the bridge arm circuit is controlled so that the current flowing paths in the bridge arm circuit are switched in the same power module, the parasitic inductance of the current conversion path and the turn-off peak voltage borne by the semiconductor switch device in the turn-off process are reduced, the service life of the semiconductor switch device is prolonged, and the operation reliability and the capacity of the converter are improved.
The preferred embodiments of the present application have been described above with reference to the accompanying drawings, and are not intended to limit the scope of the claims of the application accordingly. Any modifications, equivalents and improvements which may occur to those skilled in the art without departing from the scope and spirit of the present application are intended to be within the scope of the claims of the present application.

Claims (8)

1. A control method of a converter comprises a direct current positive port, a direct current midpoint, a direct current negative port, an alternating current output port and a bridge arm circuit arranged between the direct current positive port and the direct current negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port;
the control method of the converter is characterized by comprising the following steps:
when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the second voltage is equal to the direct current negative port voltage.
2. The method for controlling a converter according to claim 1, wherein when the voltage difference between the ac output port and the dc midpoint is switched between a preset voltage and a first voltage, and the current direction is from the ac output port to the bridge arm circuit, controlling the operating state of the semiconductor switching devices in the bridge arm circuit to switch the current flowing path in the bridge arm circuit within the same power module comprises:
and controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be on, and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be off.
3. The method of claim 2, wherein the controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on and the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off further comprises:
and controlling the first semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be on, and controlling the second semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be off.
4. The method of claim 3, wherein the controlling the second semiconductor switch device in the first power module and the first semiconductor switch device in the second power module are turned on, and the controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module are turned off, and
before controlling the first semiconductor switch device in the first power module and the first semiconductor switch device in the second power module to be turned on and controlling the second semiconductor switch device in the first power module, the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the first semiconductor switch device in the second power module to be turned on, and controlling the first semiconductor switch device in the first power module, the second semiconductor switch device in the second power module, and the second semiconductor switch device in the third power module to be turned off.
5. The method for controlling a converter according to claim 1, wherein when the voltage difference between the ac output port and the dc midpoint is switched between the preset voltage and a second voltage, and the current direction is from the leg circuit to the ac output port, controlling the operating state of the semiconductor switching devices in the leg circuit to switch the current flowing path in the leg circuit within the same power module comprises:
and controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be off.
6. The method of claim 5, wherein the controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be turned on and the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned off further comprises:
and controlling the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be off.
7. The method of claim 6, wherein the controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module are turned on, and wherein the controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the second semiconductor switch device in the third power module are turned off, and wherein the controlling the second semiconductor switch device in the second power module and the first semiconductor switch device in the third power module are turned off
Before controlling the second semiconductor switch device in the second power module and the second semiconductor switch device in the third power module to be turned on and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module and the first semiconductor switch device in the third power module to be turned off, the method further includes:
and controlling the second semiconductor switch device in the second power module to be turned on, and controlling the first semiconductor switch device in the first power module, the first semiconductor switch device in the second power module, the first semiconductor switch device in the third power module, and the second semiconductor switch device in the third power module to be turned off.
8. A current transformer comprises a direct current positive port, a direct current midpoint, a direct current negative port, an alternating current output port and a bridge arm circuit arranged between the direct current positive port and the direct current negative port;
the bridge arm circuit comprises a first power module, a second power module and a third power module; each power module comprises a first diode, a second diode, and a first semiconductor switching device and a second semiconductor switching device which are connected in series, wherein the first semiconductor switching device is connected in anti-parallel with the first diode, and the second semiconductor switching device is connected in anti-parallel with the second diode;
the first end of the first power module is connected with the positive direct-current port, the second end of the first power module is connected with the first end of the second power module, and the third end of the first power module is connected with the direct-current midpoint; the second end of the second power module is connected with the alternating current output port, and the third end of the second power module is connected with the second end of the third power module; the first end of the third power module is connected with the direct current midpoint, and the third end of the third power module is connected with the direct current negative port;
the converter is characterized by further comprising a control unit;
the control unit is used for controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the flowing paths of the current in the bridge arm circuit to be switched in the same power module when the voltage difference between the alternating current output port and the direct current midpoint is switched between a preset voltage and a first voltage and the current direction is from the alternating current output port to the bridge arm circuit; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct-current midpoint voltage, and the first voltage is equal to the direct-current positive port voltage; and/or the presence of a gas in the gas,
when the voltage difference between the alternating current output port and the direct current midpoint is switched between the preset voltage and a second voltage and the current direction is from the bridge arm circuit to the alternating current output port, controlling the working state of a semiconductor switch device in the bridge arm circuit to enable the current flowing paths in the bridge arm circuit to be switched in the same power module; under the condition that the voltage drop of a bridge arm circuit and the voltage drop of a line are not counted, the preset voltage is equal to the direct current midpoint voltage, and the second voltage is equal to the direct current negative port voltage.
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