CN109088559A - A kind of modulator approach applied to mixed active neutral-point-clamped formula three-level converter - Google Patents
A kind of modulator approach applied to mixed active neutral-point-clamped formula three-level converter Download PDFInfo
- Publication number
- CN109088559A CN109088559A CN201811050459.7A CN201811050459A CN109088559A CN 109088559 A CN109088559 A CN 109088559A CN 201811050459 A CN201811050459 A CN 201811050459A CN 109088559 A CN109088559 A CN 109088559A
- Authority
- CN
- China
- Prior art keywords
- switch
- switching tube
- nought state
- switching
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of modulator approaches applied to mixed active neutral-point-clamped formula three-level converter.In each switch periods, measure real-time duty ratio and real-time alternating current, and predict to use nought state 0UL for main nought state after conduction loss reduction amount；Measure current DC bus-bar voltage and switching frequency, and the prediction of the extra switch damage curve by having measured use nought state 0UL for main nought state after switching loss incrementss.Two kinds of losses that comparison prediction obtains, when conduction loss reduction amount is more than switching loss incrementss, using the modulation sequence of four switch motions；When conduction loss reduction amount is less than switching loss incrementss, using the modulation sequence of switch motion twice.Using modulator approach of the present invention, the conduction loss of mixed active neutral-point-clamped formula three-level converter is smaller, and overall losses distribution is more balanced.Realize efficiency optimization.
Description
Technical field
The present invention relates to power electronics fields, more particularly to one kind to be applied to mixed active neutral-point-clamped formula three
The modulator approach of level converter.
Background technique
Mixed type multi-level converter applies silicon carbide device and silicon device simultaneously, can be in Lifting Transform device performance
Simultaneously within the acceptable range by cost control.The most common mixed structure is to be parallel to SiC schottky diode
On silicon substrate insulated gate bipolar transistor (silicon IGBT), which can reduce the turn-on consumption and silicon carbide schottky of silicon IGBT
The reverse recovery loss of diode.But due to silicon IGBT and silicon carbide diode switching frequency having the same, on silicon IGBT
Switching loss is still larger.
" the An Extreme High Efficient Three-Level Active Neutral-Point- in document
Clamped Converter Comprising SiC&Si Hybrid Power Stage,"(IEEE Transactions on
Power Electronics, pp.1-1.) in propose mixed active neutral point clamped multi three-level converter apply carbonization
Silicon based metal oxide semiconductor field effect transistor and silicon substrate insulated gate bipolar transistor.Pass through the choosing of redundancy nought state
It selects, so that all silicon devices can switch under low switching frequency, to substantially reduce switching loss.Meanwhile document "
Carrier-based PWM design of multilevel ANPC-based converter through
hierarchical decomposition,"in 2018 IEEE Applied Power Electronics Conference
It proposes converter being divided into high frequency in and Exposition (APEC), San Antonio, TX, 2018, pp.2542-2549.
Part and low frequency part use silicon carbide device in high frequency section, and low frequency part uses silicon device, realizes efficiency and cost
Two-win.But mixing code converter modulation system does not all make full use of redundancy nought state above, causes to mix code converter damage
Consumption is unevenly distributed weighing apparatus, still will limit peak power output.
The application proposes a kind of new modulation system, using the redundancy nought state 0UL that can reduce converter conduction loss
As main nought state, so as to greatly reduce conduction loss in the partial section of entire duty cycle and optimize damage
Consumption distribution.Meanwhile the modulator approach realizes the Sofe Switch for generating extra switch movement silicon device by being inserted into intermediate nought state,
To avoid the substantial increase of switching loss.And the switching for passing through more modulation sequence, so that converter is in entire work week
Efficiency in phase is realized optimal.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide one kind to be applied to mixed active neutral-point-clamped
The modulator approach of formula three-level converter.
Mixed active neutral-point-clamped formula three-level converter of the present invention includes four identical silicon substrate insulated gates
Bipolar junction transistor Q1、Q4、Q5、Q6With two identical silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor Q2、Q3,
Modulator approach applied to mixed active neutral-point-clamped formula three-level converter includes the following steps:
(a) the action time t of next switch periods non-zero status is calculated in each switch periodsnon-zero,
tnon-zeroBy reference voltage compared with triangular carrier voltage after obtain；
(b) the effect duty ratio d of the main nought state of next switch periodszeroIt is calculated and is provided by formula (1)
Wherein tsFor switch periods duration；
(c) applying equation (2) prediction use nought state 0UL for main nought state after conduction loss reduction amount
Wherein Δ PconConduction loss reduction amount after indicating expected application nought state 0UL, RQ3It indicates in the converter
The conducting resistance of the silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor used, RQ6It indicates to use in the converter
The conducting resistance of silicon substrate insulated gate bipolar transistor, i (t) indicate that converter current time exports electric current；
(d) it is adopted according to the extra switch damage curve of converter, current DC bus-bar voltage and switching frequency, prediction
It is the incrementss of switching loss after main nought state with nought state 0UL；
(e) incrementss for the conduction loss reduction amount and switching loss that comparison prediction obtains in real time；
(f) when the conduction loss of reduction is more than increased switching loss, next switch periods are used and are opened comprising four times
The modulation sequence of pass movement, according to different reference voltages, the modulation sequence comprising four switch motions is as follows:
When the conduction loss of reduction is less than increased switching loss, next switch periods are used comprising switching twice
The modulation sequence of movement, according to different reference voltages, the modulation sequence comprising switch motion twice is as follows:
Mixed active neutral-point-clamped formula three-level converter of the present invention includes DC side, capacitor, bridge arm and friendship
Side is flowed, connect as follows: the capacitor is directly coupled to DC side and draws neutral point；The bridge arm includes four series connection
Silicon substrate insulated gate bipolar transistor Q1、Q4、Q5、Q6It is directly coupled to capacitor both ends, and Q5、Q6Midpoint and capacitor in
Property point connection, the bridge arm also includes two concatenated silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor Q2、Q3, coupling
Close first switch tube Q1, the 5th switching tube Q5Midpoint and the 6th switching tube Q6, the 4th switching tube Q4Midpoint, and draw
Second switch Q2, third switching tube Q3Midpoint as the output of bridge arm be connected to exchange side.
Switch state of the present invention includes " P ", " N ", " 0L ", " 0U ", " 0UL ", is defined as follows
Non-zero status P: third switching tube (Q3), the 4th switching tube (Q4), the 5th switching tube (Q5) shutdown, first switch tube
(Q1), second switch (Q2), the 6th switching tube (Q6) open-minded；
Non-zero status N: first switch tube (Q1), second switch (Q2), the 6th switching tube (Q6) shutdown, third switching tube
(Q3), the 4th switching tube (Q4), the 5th switching tube (Q5) open-minded；
Nought state 0L: second switch (Q2), the 4th switching tube (Q4), the 5th switching tube (Q5) shutdown, first switch tube
(Q1), third switching tube (Q3), the 6th switching tube (Q6) open-minded；
Nought state 0U: first switch tube (Q1), third switching tube (Q3), the 6th switching tube (Q6) shutdown, second switch
(Q2), the 4th switching tube (Q4), the 5th switching tube (Q5) open-minded；
Nought state 0UL: first switch tube (Q1), the 4th switching tube (Q4) shutdown, second switch (Q2), third switching tube
(Q3), the 5th switching tube (Q5), the 6th switching tube (Q6)。
Preferably, the reference voltage is calculated by traditional carrier modulating method, or by space vector modulation
Method Equivalent Conversion obtains.
Preferably, the action time of the intermediate nought state is preferably 0.5 μ s-1 μ s.
The present invention measures real-time duty ratio and real-time alternating current in each switch periods, and predicts using nought state
0UL is the reduction amount of conduction loss after main nought state；Current DC bus-bar voltage and switching frequency are measured, and by
Measurement extra switch damage curve prediction use nought state 0UL for main nought state after switching loss incrementss.Compare
Two kinds obtained losses are predicted, when conduction loss reduction amount is more than switching loss incrementss, using the modulation of four switch motions
Sequence；When conduction loss reduction amount is less than switching loss incrementss, using the modulation sequence of switch motion twice.Using this hair
The conduction loss of the bright modulator approach, mixed active neutral-point-clamped formula three-level converter is smaller, and overall losses point
Cloth is more balanced.Realize efficiency optimization.
Detailed description of the invention
Fig. 1 is mixed active neutral point clamped multi three-level structure and current path schematic diagram；
Fig. 2 is three level portions switch state figure of mixed active neutral point clamped multi；
Fig. 3 is modulation, switch drive waveforms and single-phase circuit output waveform based on Fig. 1 topology；
Fig. 4 is modulator approach process；
Fig. 5 is based on Fig. 1 topology, in fsw=20kHz, Iorms=15A, Ma=0.9, andUnder the conditions of nought state
Select example；
Fig. 6 is Ma=0.9, UDC=600V, PF=0.8, Iorms=15A, fswIn the case of=20kHz, (1) is conventional modulated side
Each element loss of method, (2) are each element loss of the modulator approach.
Fig. 7 is the mixing ANPC converter switches waveform that the modulator approach is used under inverter mode；
Fig. 8 is the switch gate pole letter for using the mixing ANPC converter amplitude modulation of above-mentioned modulator approach than for 0.75 when
Number.
Specific embodiment
In order to more specifically describe the present invention, with reference to the accompanying drawing and specific embodiment is to technical side of the invention
Case is described in detail.
The modulation system is suitable for mixed active neutral point clamped multi three-level converter as shown in Figure 1, and described is mixed
The active neutral-point-clamped formula three-level converter of mould assembly includes DC side, capacitor, bridge arm and exchanges side, is connected as follows: the electricity
Appearance is directly coupled to DC side and draws neutral point；The bridge arm includes four concatenated silicon substrate insulated gate bipolar crystal
Pipe Q1、Q2、Q3、Q4It is directly coupled to capacitor both ends, and Q2、Q3Midpoint connect with capacitor neutral point, the bridge arm also includes
Two concatenated silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor Q5、Q6, it is coupled to first switch tube Q1, second open
Close pipe Q2Midpoint and third switching tube Q3, the 4th switching tube Q4Midpoint, and draw the 5th switching tube Q5, the 6th switching tube
Q6Midpoint as the output of bridge arm be connected to exchange side.
Three-level converter as shown in Figure 1, there are three types of different output voltage "+UDC/2”、“0”、“-UDC/2".Three
The corresponding switch state of the different output voltages of kind is as shown in Figure 2 and Table 1, in the case where output voltage is " 0 ", compared to zero
Q in state 0L and 0U, nought state 0UL2、Q3、Q5、Q6It is both turned on, conducting resistance is small, and conduction loss is small.
Table 1
It is selective to include using a kind of modulation sequence comprising switch motion twice or one kind in each switch periods
The modulation sequence of four switch motions realizes the efficiency optimization in the switch periods.Modulation sequence comprising switch motion twice
It is as shown in the table:
In the modulation sequence comprising switch motion twice, only silicon carbide device Q2、Q3Carry out switch motion, silicon substrate
Insulated gate bipolar transistor Q1、Q4、Q5、Q6Without switch motion, therefore only Q2、 Q3On have switching loss.
Modulation sequence comprising four switch motions is as shown in the table:
Modulation sequence comprising four switch motions increases two compared to the modulation sequence comprising switch motion twice
Switching between secondary difference nought state, causes the switch motion of silicon substrate insulated gate bipolar transistor.Modulation waveform, switch drive
Dynamic waveform and output waveform are but increased as shown in figure 3, HF switch movement occurs in silicon substrate insulated gate bipolar transistor
Switch motion all realizes Sofe Switch.
In reference voltage positive half period, it is switched to 0UL state from 0L state, when output is 0L state, Q1、Q3And Q6It opens
It is logical, turn off Q1, due to Q1Upper no voltage is zero voltage turn-off.After one section of dead time, Q is opened2And Q5, export 0UL shape
State, in Q2And Q5When not opening completely, two switching tubes do not have electric current to flow through, therefore are zero current turning-ons.It is cut from 0UL state
0L state is gained, Q is turned off2And Q5, device both ends do not have voltage, are zero voltage turn-off, open Q1, it is zero that no electric current, which flows through,
Electric current is open-minded.
In reference voltage negative half-cycle, it is switched to 0UL state from 0U state, when output is 0U state, Q2、Q4And Q5It opens
It is logical, turn off Q4, due to Q4Upper no voltage is zero voltage turn-off.After one section of dead time, Q is opened3And Q6, export 0UL shape
State, in Q3And Q6When not opening completely, two switching tubes do not have electric current to flow through, therefore are zero current turning-ons.It is cut from 0UL state
0U state is gained, Q is turned off3And Q6, device both ends do not have voltage, are zero voltage turn-off, open Q4, it is zero that no electric current, which flows through,
Electric current is open-minded.
Therefore according to above-mentioned analysis, the tune using switch motion twice is compared using the modulation sequence of four switch motions
Sequence processed and additional increased switch motion is Sofe Switch, switching loss only has posting for silicon substrate insulated gate bipolar transistor
It is lost caused by raw capacitor charge and discharge.
Modulator approach process proposed by the present invention is as shown in figure 4, among determining after the selection of nought state, and survey calculation is not
Under same DC bus-bar voltage, different switching frequencies, switching band between main nought state 0UL and intermediate nought state 0L or 0U
The extra switch damage curve come；Measurement records the equivalent conducting resistance of each power switch tube simultaneously；
In each switch periods, real-time duty ratio and real-time alternating current are measured, and use zero by formula (2) prediction
State 0UL is the reduction amount Δ P of conduction loss after main nought statecon；Current DC bus-bar voltage and switching frequency are measured,
And by the prediction of the extra switch damage curve that has measured use nought state 0UL for main nought state after switching loss increasing
Dosage Δ Pswi_zero。
Two kinds of losses that comparison prediction obtains, as conduction loss reduction amount Δ PconMore than switching loss incrementss Δ
Pswi_zero, using the modulation sequence of four switch motions；As conduction loss reduction amount Δ PconLess than switching loss incrementss Δ
Pswi_zero, using the modulation sequence of switch motion twice, as shown in figure 5, dash area uses the modulation sequence of four switch motions
Column, blank parts use the modulation sequence of switch motion twice.
For conventional modulated method and the corresponding each element loss of modulator approach of the present invention, use is of the present invention
The element Q of modulator approach2And Q5On conduction loss it is smaller, and overall losses distribution it is more balanced.Fig. 7 and Fig. 8 is to use
The experimental waveform of modulator approach of the present invention, as shown in fig. 7, in reference level positive half period, using four switch motions
Modulation sequence is P → 0L → 0UL → 0L → P, consistent with theory.In a carrier cycle as shown in Figure 8, nought state is used
When 0UL uses the modulation sequence of four switch motions, silicon substrate insulated gate bipolar transistor Q1And Q5It is opened in high frequency
It closes, is silicon substrate insulated gate bipolar transistor when using the modulation sequence of switch motion twice without using nought state 0UL
Q1And Q5It is very low in switching frequency.Switch state result in a carrier cycle is consistent with Fig. 5, and existing use is opened twice
The modulation sequence of pass movement, and have the modulation sequence using four switch motions, realize efficiency optimization.
The above-mentioned description to embodiment is for this hair can be understood and applied convenient for those skilled in the art
It is bright.Person skilled in the art obviously easily can make various modifications to above-described embodiment, and described herein
General Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to above-mentioned implementations
Example, those skilled in the art's announcement according to the present invention, the improvement made for the present invention and modification all should be of the invention
Within protection scope.
Claims (5)
1. a kind of modulator approach applied to mixed active neutral-point-clamped formula three-level converter, in the mixed active
Point clamping type three-level converter includes four identical silicon substrate insulated gate bipolar transistor Q1、Q4、Q5、Q6It is identical with two
Silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor Q2、Q3, it is characterised in that include the following steps:
(a) the action time t of next switch periods non-zero status is calculated in each switch periodsnon-zero,tnon-zeroBy joining
It is obtained after voltage is examined compared with triangular carrier voltage；
(b) the effect duty ratio d of the main nought state of next switch periodszeroIt is calculated and is provided by formula (1)
Wherein tsFor switch periods duration；
(c) applying equation (2) prediction use nought state 0UL for main nought state after conduction loss reduction amount
Wherein Δ PconConduction loss reduction amount after indicating expected application nought state 0UL, RQ3It indicates to use in the converter
The conducting resistance of silicon carbide-based Metal Oxide Semiconductor Field Effect Transistor, RQ6Indicate that the silicon substrate used in the converter insulate
The conducting resistance of grid bipolar junction transistor, i (t) indicate that converter current time exports electric current；
(d) according to the extra switch damage curve of converter, current DC bus-bar voltage and switching frequency, prediction uses zero shape
State 0UL is the incrementss of switching loss after main nought state；
(e) incrementss for the conduction loss reduction amount and switching loss that comparison prediction obtains in real time；
(f) when the conduction loss of reduction is more than increased switching loss, next switch periods use dynamic comprising No. four switches
The modulation sequence of work；According to different reference voltages, the modulation sequence comprising four switch motions is as follows:
In reference voltage positive half period, four switch motions are followed successively by from non-zero status P and are switched to intermediate nought state 0L, from centre
Nought state 0L is switched to main nought state 0UL, is switched to intermediate nought state 0L from main nought state 0UL, from intermediate nought state 0L
It is switched to non-zero status P；In reference voltage negative half-cycle, four switch motions are followed successively by from non-zero status N and are switched to centre zero
State 0U, is switched to main nought state 0UL from intermediate nought state 0U, is switched to intermediate nought state 0U from main nought state 0UL, from
Intermediate nought state 0U is switched to non-zero status N；
When the conduction loss of reduction is less than increased switching loss, next switch periods, which use, includes switch motion twice
Modulation sequence, according to different reference voltages, the modulation sequence comprising switch motion twice is as follows:
In reference voltage positive half period, switch motion twice is followed successively by from non-zero status P and is switched to main nought state 0L, from main
Nought state 0L is switched to non-zero status P；In reference voltage negative half-cycle, switch motion twice, which is followed successively by from non-zero status N, to be switched
To main nought state 0U, non-zero status N is switched to from main nought state 0U.
2. the method as described in claim 1, it is characterised in that the mixed active neutral-point-clamped formula three-level converter
Comprising DC side, capacitor, bridge arm and side is exchanged, connect as follows: the capacitor is directly coupled to DC side and draws neutral point；
The bridge arm includes four concatenated silicon substrate insulated gate bipolar transistor Q1、Q4、Q5、Q6Capacitor both ends are directly coupled to, and
And Q5、Q6Midpoint connect with capacitor neutral point, the bridge arm also includes two concatenated silicon carbide-based metal-oxide semiconductor (MOS)s
Field effect transistor Q2、Q3, it is coupled to first switch tube Q1, the 5th switching tube Q5Midpoint and the 6th switching tube Q6, the 4th switch
Pipe Q4Midpoint, and draw second switch Q2, third switching tube Q3Midpoint as the output of bridge arm be connected to exchange side.
3. the method as described in claim 1, it is characterised in that the switch state include " P ", " N ", " 0L ", " 0U ",
" 0UL ", is defined as follows
Non-zero status P: third switching tube (Q3), the 4th switching tube (Q4), the 5th switching tube (Q5) shutdown, first switch tube (Q1)、
Second switch (Q2), the 6th switching tube (Q6) open-minded；
Non-zero status N: first switch tube (Q1), second switch (Q2), the 6th switching tube (Q6) shutdown, third switching tube (Q3)、
4th switching tube (Q4), the 5th switching tube (Q5) open-minded；
Nought state 0L: second switch (Q2), the 4th switching tube (Q4), the 5th switching tube (Q5) shutdown, first switch tube (Q1),
Three switching tube (Q3), the 6th switching tube (Q6) open-minded；
Nought state 0U: first switch tube (Q1), third switching tube (Q3), the 6th switching tube (Q6) shutdown, second switch (Q2),
Four switching tube (Q4), the 5th switching tube (Q5) open-minded；
Nought state 0UL: first switch tube (Q1), the 4th switching tube (Q4) shutdown, second switch (Q2), third switching tube (Q3)、
5th switching tube (Q5), the 6th switching tube (Q6)。
4. the method as described in claim 1, it is characterised in that the reference voltage is calculated by traditional carrier modulating method
It obtains, or is obtained by space vector modulating method Equivalent Conversion.
5. the method as described in claim 1, it is characterised in that the action time of the intermediate nought state is preferably 0.5 μ s-1
μs。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811050459.7A CN109088559B (en) | 2018-09-10 | 2018-09-10 | Modulation method applied to mixed active neutral point clamp type three-level converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811050459.7A CN109088559B (en) | 2018-09-10 | 2018-09-10 | Modulation method applied to mixed active neutral point clamp type three-level converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109088559A true CN109088559A (en) | 2018-12-25 |
| CN109088559B CN109088559B (en) | 2021-01-08 |
Family
ID=64841314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811050459.7A Active CN109088559B (en) | 2018-09-10 | 2018-09-10 | Modulation method applied to mixed active neutral point clamp type three-level converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109088559B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110995043A (en) * | 2019-12-11 | 2020-04-10 | 深圳市禾望电气股份有限公司 | Converter and control method thereof |
| CN111313734A (en) * | 2020-03-05 | 2020-06-19 | 深圳科士达科技股份有限公司 | Active neutral point clamped three-level converter, operating method and control device thereof |
| WO2020169512A1 (en) * | 2019-02-19 | 2020-08-27 | Sma Solar Technology Ag | Method for switching off power semiconductor switches in a bridge circuit, bridge circuit, and inverter comprising a bridge circuit |
| CN112187068A (en) * | 2020-08-25 | 2021-01-05 | 中国长江三峡集团有限公司 | Mixed fundamental frequency modulation method of three-level wind power converter |
| CN112202353A (en) * | 2020-08-25 | 2021-01-08 | 远景能源有限公司 | Double-fed frequency converter and modulation method thereof |
| CN112532092A (en) * | 2020-12-04 | 2021-03-19 | 河海大学 | SiC and Si mixed type three-level ANPC inverter modulation circuit |
| CN112688584A (en) * | 2020-12-15 | 2021-04-20 | 西安奇点能源技术有限公司 | Three-level topology ANPC four-quadrant operation modulation method |
| CN113037112A (en) * | 2021-04-16 | 2021-06-25 | 双一力(宁波)电池有限公司 | ANPC type three-level inverter, control method and power system |
| CN113098310A (en) * | 2021-05-24 | 2021-07-09 | 青岛大学 | Active clamping three-level inverter circuit and control method thereof |
| US11563327B2 (en) * | 2018-08-31 | 2023-01-24 | Kk Wind Solutions A/S | Flexible and efficient switched string converter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2779345A1 (en) * | 2013-03-14 | 2014-09-17 | ABB Oy | Method for controlling switching branch of active neutral point clamped (ANPC) three-level converter and switching branch for such converter |
| CN105186902A (en) * | 2015-09-10 | 2015-12-23 | 阳光电源股份有限公司 | ANPC type three-level inverter, modulation method and electrical equipment |
| CN106787906A (en) * | 2016-12-27 | 2017-05-31 | 电子科技大学 | A kind of switching loss dispersed distribution modulator approach of ANPC three-level inverters |
| CN106877720A (en) * | 2017-04-28 | 2017-06-20 | 阳光电源股份有限公司 | Active neutral-point-clamped type inverter and its zero passage changing method and zero passage switching device |
-
2018
- 2018-09-10 CN CN201811050459.7A patent/CN109088559B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2779345A1 (en) * | 2013-03-14 | 2014-09-17 | ABB Oy | Method for controlling switching branch of active neutral point clamped (ANPC) three-level converter and switching branch for such converter |
| CN105186902A (en) * | 2015-09-10 | 2015-12-23 | 阳光电源股份有限公司 | ANPC type three-level inverter, modulation method and electrical equipment |
| CN106787906A (en) * | 2016-12-27 | 2017-05-31 | 电子科技大学 | A kind of switching loss dispersed distribution modulator approach of ANPC three-level inverters |
| CN106877720A (en) * | 2017-04-28 | 2017-06-20 | 阳光电源股份有限公司 | Active neutral-point-clamped type inverter and its zero passage changing method and zero passage switching device |
Non-Patent Citations (2)
| Title |
|---|
| XIN JING 等: "Application and losses analysis of ANPC converters in doubly-fed induction generator wind energy conversion system", 《2013 INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE》 * |
| 马大俊 等: "三电平ANPC逆变器中点电压平衡的VSVPWM控制策略", 《电气传动》 * |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11563327B2 (en) * | 2018-08-31 | 2023-01-24 | Kk Wind Solutions A/S | Flexible and efficient switched string converter |
| WO2020169512A1 (en) * | 2019-02-19 | 2020-08-27 | Sma Solar Technology Ag | Method for switching off power semiconductor switches in a bridge circuit, bridge circuit, and inverter comprising a bridge circuit |
| US11901805B2 (en) | 2019-02-19 | 2024-02-13 | Sma Solar Technology Ag | Method for switching off power semiconductor switches in a bridge circuit, bridge circuit, and inverter comprising a bridge circuit |
| JP2022520864A (en) * | 2019-02-19 | 2022-04-01 | エスエムエイ ソーラー テクノロジー アクティエンゲゼルシャフト | How to turn off power semiconductor switches in a bridge circuit, a bridge circuit, and an inverter that includes a bridge circuit |
| CN110995043A (en) * | 2019-12-11 | 2020-04-10 | 深圳市禾望电气股份有限公司 | Converter and control method thereof |
| CN110995043B (en) * | 2019-12-11 | 2021-08-31 | 深圳市禾望电气股份有限公司 | Converter and control method thereof |
| CN111313734B (en) * | 2020-03-05 | 2021-06-29 | 深圳科士达科技股份有限公司 | Active neutral point clamped three-level converter, operating method and control device thereof |
| CN111313734A (en) * | 2020-03-05 | 2020-06-19 | 深圳科士达科技股份有限公司 | Active neutral point clamped three-level converter, operating method and control device thereof |
| CN112202353A (en) * | 2020-08-25 | 2021-01-08 | 远景能源有限公司 | Double-fed frequency converter and modulation method thereof |
| WO2022041813A1 (en) * | 2020-08-25 | 2022-03-03 | 远景能源有限公司 | Doubly-fed converter and modulation method thereof |
| CN112187068B (en) * | 2020-08-25 | 2022-04-26 | 中国长江三峡集团有限公司 | Mixed fundamental frequency modulation method of three-level wind power converter |
| GB2618406A (en) * | 2020-08-25 | 2023-11-08 | Envision Energy Co Ltd | Doubly-fed converter and modulation method thereof |
| CN112187068A (en) * | 2020-08-25 | 2021-01-05 | 中国长江三峡集团有限公司 | Mixed fundamental frequency modulation method of three-level wind power converter |
| CN112532092B (en) * | 2020-12-04 | 2022-02-22 | 河海大学 | SiC and Si mixed type three-level ANPC inverter modulation circuit |
| CN112532092A (en) * | 2020-12-04 | 2021-03-19 | 河海大学 | SiC and Si mixed type three-level ANPC inverter modulation circuit |
| CN112688584A (en) * | 2020-12-15 | 2021-04-20 | 西安奇点能源技术有限公司 | Three-level topology ANPC four-quadrant operation modulation method |
| CN113037112A (en) * | 2021-04-16 | 2021-06-25 | 双一力(宁波)电池有限公司 | ANPC type three-level inverter, control method and power system |
| CN113098310A (en) * | 2021-05-24 | 2021-07-09 | 青岛大学 | Active clamping three-level inverter circuit and control method thereof |
| CN113098310B (en) * | 2021-05-24 | 2022-06-07 | 青岛大学 | Active clamping three-level inverter circuit and control method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109088559B (en) | 2021-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109088559A (en) | A kind of modulator approach applied to mixed active neutral-point-clamped formula three-level converter | |
| Barater et al. | Performance evaluation of a three-level ANPC photovoltaic grid-connected inverter with 650-V SiC devices and optimized PWM | |
| CN106655853B (en) | A kind of three-level inverter | |
| CN102185514B (en) | Single-phase three-level inverter | |
| CN109067219B (en) | Three-phase AC/DC converter and control method thereof | |
| CN101728964B (en) | Bridgeless power factor correction converter with single inductance and three levels | |
| CN110798072B (en) | Modulation method and system of ANPC active bridge applied to DAB structure | |
| CN108377104A (en) | A kind of space vector control method applied to mixed type three-phase tri-level active neutral point clamped multi converter | |
| CN106329977A (en) | Inverter circuit control method | |
| CN105874703A (en) | Soft switching inverter | |
| CN110086360A (en) | A kind of five level high efficiency rectifiers | |
| US10148196B2 (en) | Inverter and control method thereof | |
| CN102255544A (en) | DC (direct current)/AC (alternating current) inverter circuit | |
| CN103618336B (en) | The output digital modulation circuit of rectifier type High Frequency Link combining inverter and control system | |
| CN104300811A (en) | Unipolar and bipolar hybrid modulation method for single-phase voltage type PWM rectifier | |
| CN108390581A (en) | A kind of bridge circuit being used for inverter or rectifier | |
| CN105048842B (en) | A kind of single-phase four electrical level inverters and its application circuit | |
| CN113328649A (en) | Conversion circuit and control method thereof | |
| Wang et al. | Efficiency improvement of 2-and 3-level inverters for distributed photovoltaic application using hybrid devices | |
| CN104467501B (en) | Shoot-through-prevention midpoint clamping type single-phase non-isolated photovoltaic inverter topology | |
| CN103856061A (en) | Full-range soft switching method of input-series output-paralleled phase-shifted full-bridge convertor | |
| CN205265554U (en) | Five level inverter unit and application circuit thereof | |
| Kumari et al. | Loss analysis of NPC and T-type three-level converter for Si, SiC, and GaN based devices | |
| CN116545285A (en) | Hybrid device four-level converter with T-shaped high-frequency structure and SPWM (sinusoidal pulse Width modulation) mixing modulation control method | |
| Wu et al. | A novel efficient t type three level neutral-point-clamped inverter for renewable energy system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |