CN103633850A - Half-bridge LLCPFM (liquid level control power factor meter) frequency change circuit and control method thereof - Google Patents
Half-bridge LLCPFM (liquid level control power factor meter) frequency change circuit and control method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of power conversion and in particular relates to a half-bridge LLCPFM (liquid level control power factor meter) frequency change circuit and a control method of the half-bridge LLCPFM frequency change circuit. The half-bridge LLCPFM frequency change circuit comprises a switch circuit, an LLC resonance circuit and a rectification output circuit, wherein the switch circuit consists of two groups of half-bridge sub modules which are cascaded; each group of half-bridge sub modules comprise two MOSFETs (metal-oxide-semiconductor field effect transistors); middle nodes of the two groups of half-bridge sub modules are connected with the voltage input side of the LLC resonance circuit; the voltage output side of the LLC resonance circuit is connected with the rectification output circuit. A PWM (pulse width modulation) signal is sent to the switch circuit according to a current value or a voltage value of a load; the switch circuit supplies a driving signal generated according to the PWM signal to the two groups of half-bridge sub modules to realize soft switching conversion. According to the half-bridge LLCPFM frequency change circuit and the control method of the half-bridge LLCPFM frequency change circuit, zero voltage switching is realized by an LLC series-connection resonance technology, the switching loss of the circuit is reduced, and high-frequency half-bridge soft switching conversion is realized; due to the design of an electrical symmetric topological structure, the circuit can make a response quickly, so that the stability of the circuit is improved, and the size and the weight of the circuit are reduced.
Description
Technical field
The present invention relates to power converter technical field, relate in particular to a kind of half-bridge LLCPFM frequency changer circuit and control method thereof.
Background technology
Along with the development of Switching Power Supply, soft switch technique has obtained developing widely and applying, and has now worked out many high efficiency circuit topologies, mainly contains the soft switch topology of mode of resonance and the soft switch topology of PWM type.In recent years, along with the development of semiconductor device processing technology, the conducting resistance of switching tube, parasitic capacitance and reverse recovery time are more and more less, and this development that is controlled resonant converter provides opportunity again.How to utilize resonant circuit to realize soft switch conversion, thereby the efficiency of raising Switching Power Supply has become current people urgently to wish the problem solving.
Summary of the invention
The object of the invention is to propose a kind of half-bridge LLCPFM frequency changer circuit and control method thereof, adopt electric symmetrical topological structure, realized efficiently, half-bridge soft switch conversion fast, circuit volume is little and stability is high.
For reaching this object, the present invention by the following technical solutions:
First aspect, provides a kind of half-bridge LLCPFM frequency changer circuit, comprises switching circuit, LLC resonant circuit and rectifying output circuit;
Described switching circuit is formed by the cascade of two groups of half-bridge submodules, every group of half-bridge submodule comprises 2 MOSFET pipes, the intermediate node of two groups of half-bridge submodules connects the voltage input side of LLC resonant circuit, the Voltage-output side of LLC resonant circuit connects rectifying output circuit, two groups of half-bridge submodules the control utmost point connect respectively the switching signal of a pair of phase place complementation of input.
Wherein, one group of half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S1-1 and MOSFET pipe S1-2, wherein MOSFET manages the electrode input end of the drain electrode connecting valve signal of S1-1, the source electrode of MOSFET pipe S1-1 connects the drain electrode of MOSFET pipe S1-2, and the source electrode of MOSFET pipe S1-2 connects intermediate node; One end of the grid contact resistance R8 of MOSFET pipe S1-1, the other end of resistance R 8 connects the source electrode of MOSFET pipe S1-1; One end of the grid contact resistance R2 of MOSFET pipe S1-2, the other end of resistance R 2 connects the source electrode of MOSFET pipe S1-2;
Another group half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S2-1 and MOSFET pipe S2-2, wherein the drain electrode of MOSFET pipe S2-1 connects intermediate node, the source electrode of MOSFET pipe S2-1 connects the drain electrode of MOSFET pipe S2-2, the negative input of the source electrode connecting valve signal of MOSFET pipe S2-2; One end of the grid contact resistance R3 of MOSFET pipe S2-1, the other end of resistance R 3 connects the source electrode of MOSFET pipe S2-1; One end of the grid contact resistance R1 of MOSFET pipe S2-2, the other end of resistance R 1 connects the source electrode of MOSFET pipe S2-2.
Wherein, described LLC resonant circuit comprises resonant capacitance CS1, resonant capacitance CS2, resonant inductance LR and main transformer TR, main transformer TR is integrated with leakage inductance Ls and magnetizing inductance Lm, wherein, the input of resonant inductance LR connects intermediate node, the output of resonant inductance LR connects one end of the former limit winding of main transformer TR, the other end of the former limit winding of main transformer TR connects respectively one end of resonant capacitance CS1 and one end of resonance capacitor C S2, the electrode input end of the other end connecting valve signal of resonant capacitance CS1, the negative input of the other end connecting valve signal of resonant capacitance CS2, the secondary winding of main transformer TR connects rectifying output circuit.
Wherein, described rectifying output circuit comprises output capacitance C8, output capacitance C9, diode D1-1, diode D1-2, diode D2-1 and diode D2-2, wherein, one end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D2-1 and the anode of diode D1-1; The other end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D1-2 and the anode of diode D2-2, the anode of diode D2-1 and the anode of diode D1-2 are connected respectively one end of output capacitance C8, the negative electrode of diode D1-1 and the negative electrode of diode D2-2 are connected respectively the other end of output capacitance C8, output capacitance C8 and output capacitance C9 are in parallel, the two ends of output capacitance C9 are shunt load also, thereby produces output voltage.
Wherein, described resonant capacitance CS1 parallel diode D2, resonant capacitance CS2 parallel diode D3.
Wherein, the negative electrode of described diode D1-1 also connects one end of capacitor C 5, and the other end of capacitor C 5 connects the anode of diode D1-1 by resistance R 4;
The negative electrode of described diode D2-1 also connects one end of capacitor C 11, and the other end of capacitor C 11 connects the anode of diode D2-1 by resistance R 5;
The negative electrode of described diode D2-2 also connects one end of capacitor C 10, and the other end of capacitor C 10 connects the anode of diode D2-2 by resistance R 7;
The negative electrode of described diode D1-2 also connects one end of capacitor C 12, and the other end of capacitor C 12 connects the anode of diode D1-2 by resistance R 6.
Wherein, described output capacitance C9 output capacitance CF in parallel also.
Wherein, the electrode input end of described switching signal is by capacitor C 7 ground connection, and the negative input of switching signal is by capacitor C 6 ground connection.
Wherein, the source electrode of described MOSFET pipe S1-1 and the drain electrode of MOSFET pipe S1-2 are connected respectively the negative electrode of bidirectional diode D1, the plus earth of bidirectional diode D1, the source electrode of described MOSFET pipe S2-1 and the drain electrode of MOSFET pipe S2-2 are connected respectively the anode of bidirectional diode D8, the minus earth of bidirectional diode D8, the anode of the negative electrode of bidirectional diode D1 and bidirectional diode D8 is connected by capacitor C 1.
Second aspect, provides a kind of control method that is applied to half-bridge LLCPFM frequency changer circuit described above, comprising:
According to the current value of load or magnitude of voltage, and the voltage gain of LLC resonant circuit and the relation of switching frequency are sent pwm signal to described switching circuit;
Described switching circuit generates and drives signal after pwm signal isolation is amplified, and offers respectively two groups of half-bridge submodules, to realize soft switch conversion.
Beneficial effect of the present invention is: a kind of half-bridge LLCPFM frequency changer circuit and control method thereof, comprise switching circuit, LLC resonant circuit and rectifying output circuit; Described switching circuit is formed by the cascade of two groups of half-bridge submodules, every group of half-bridge submodule comprises 2 MOSFET pipes, the intermediate node of two groups of half-bridge submodules connects the voltage input side of LLC resonant circuit, the Voltage-output side of LLC resonant circuit connects rectifying output circuit, two groups of half-bridge submodules the control utmost point connect respectively the switching signal of a pair of phase place complementation of input.According to the current value of load or magnitude of voltage, and the voltage gain of LLC resonant circuit and the relation of switching frequency are sent pwm signal to described switching circuit; Described switching circuit generates and drives signal to offer respectively two groups of half-bridge submodules after pwm signal isolation is amplified, to realize soft switch conversion.The present invention adopts LLC resonant technology to realize the zero voltage switch of MOSFET pipe, thereby greatly reduce the switching loss of circuit, realized efficient half-bridge soft switch conversion, adopt electric symmetrical Topology Structure Design, reduced electric stress and made circuit reaction fast, improved circuit stability and reduced the volume and weight of circuit.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during the embodiment of the present invention is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to the content of the embodiment of the present invention and these accompanying drawings other accompanying drawing.
Fig. 1 is the circuit diagram of half-bridge LLCPFM frequency changer circuit provided by the invention.
Fig. 2 is the LLC resonant circuit waveform schematic diagram of half-bridge LLCPFM frequency changer circuit provided by the invention.
Embodiment
For the technical scheme of technical problem that the present invention is solved, employing and the technique effect that reaches clearer, below in conjunction with accompanying drawing, the technical scheme of the embodiment of the present invention is described in further detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those skilled in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, be the circuit diagram of half-bridge LLCPFM frequency changer circuit provided by the invention.
A half-bridge LLCPFM frequency changer circuit, comprises switching circuit, LLC resonant circuit and rectifying output circuit;
Described switching circuit is formed by the cascade of two groups of half-bridge submodules, every group of half-bridge submodule comprises 2 MOSFET pipes, the intermediate node of two groups of half-bridge submodules connects the voltage input side of LLC resonant circuit, the Voltage-output side of LLC resonant circuit connects rectifying output circuit, two groups of half-bridge submodules the control utmost point connect respectively the switching signal of a pair of phase place complementation of input.
The present invention adopts LLC resonant technology to realize the zero voltage switch of MOSFET pipe, thereby greatly reduce the switching loss of circuit, realized efficient half-bridge soft switch conversion, adopt electric symmetrical Topology Structure Design, reduced electric stress and made circuit reaction fast, improved circuit stability and reduced the volume and weight of circuit.
Wherein, one group of half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S1-1 and MOSFET pipe S1-2, wherein MOSFET manages the electrode input end of the drain electrode connecting valve signal of S1-1, the source electrode of MOSFET pipe S1-1 connects the drain electrode of MOSFET pipe S1-2, and the source electrode of MOSFET pipe S1-2 connects intermediate node; One end of the grid contact resistance R8 of MOSFET pipe S1-1, the other end of resistance R 8 connects the source electrode of MOSFET pipe S1-1; One end of the grid contact resistance R2 of MOSFET pipe S1-2, the other end of resistance R 2 connects the source electrode of MOSFET pipe S1-2;
Another group half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S2-1 and MOSFET pipe S2-2, wherein the drain electrode of MOSFET pipe S2-1 connects intermediate node, the source electrode of MOSFET pipe S2-1 connects the drain electrode of MOSFET pipe S2-2, the negative input of the source electrode connecting valve signal of MOSFET pipe S2-2; One end of the grid contact resistance R3 of MOSFET pipe S2-1, the other end of resistance R 3 connects the source electrode of MOSFET pipe S2-1; One end of the grid contact resistance R1 of MOSFET pipe S2-2, the other end of resistance R 1 connects the source electrode of MOSFET pipe S2-2.
Between the grid of MOSFET pipe and source electrode, by resistance, connect, can prevent electrostatic breakdown MOSFET pipe.The resistance size of resistance is calculated according to switching frequency, is generally Europe, a little Europe to tens.
Wherein, described LLC resonant circuit comprises resonant capacitance CS1, resonant capacitance CS2, resonant inductance LR and main transformer TR, main transformer TR is integrated with leakage inductance Ls and magnetizing inductance Lm, wherein, the input of resonant inductance LR connects intermediate node, the output of resonant inductance LR connects one end of the former limit winding of main transformer TR, the other end of the former limit winding of main transformer TR connects respectively one end of resonant capacitance CS1 and one end of resonance capacitor C S2, the electrode input end of the other end connecting valve signal of resonant capacitance CS1, the negative input of the other end connecting valve signal of resonant capacitance CS2, the secondary winding of main transformer TR connects rectifying output circuit.
The MOSFET pipe being connected with the former limit winding of main transformer TR is operated in ZVS, and the rectifier diode being connected with the secondary winding of main transformer TR is operated in ZCS.
Wherein, described rectifying output circuit comprises output capacitance C8, output capacitance C9, diode D1-1, diode D1-2, diode D2-1 and diode D2-2, wherein, one end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D2-1 and the anode of diode D1-1; The other end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D1-2 and the anode of diode D2-2, the anode of diode D2-1 and the anode of diode D1-2 are connected respectively one end of output capacitance C8, the negative electrode of diode D1-1 and the negative electrode of diode D2-2 are connected respectively the other end of output capacitance C8, output capacitance C8 and output capacitance C9 are in parallel, the two ends of output capacitance C9 are shunt load also, thereby produces output voltage.
As shown in Figure 2, be the LLC resonant circuit waveform schematic diagram of half-bridge LLCPFM frequency changer circuit provided by the invention.Wherein, Vgs1-1, Vgs1-2, Vgs2-1 and Vgs2-2 represent respectively MOSFET pipe S1-1, and MOSFET manages S1-2, the switching signal of MOSFET pipe S2-1 and MOSFET pipe S2-2, Vgs1-1 is identical with Vgs1-2, and Vgs2-1 is identical with Vgs2-2, and Vgs1-1 and Vgs2-1 are complementary.Ics1 and Ics2 are the electric current that flows through resonant capacitance CS1 and resonance capacitor C S2, and Va is the output voltage signal of LLC resonant circuit, Id1-1, Id1-2, Id2-1 and Id2-2 are respectively and flow through diode D1-1, diode D1-2, the electric current of diode D2-1 and diode D2-2.
This LLC resonant circuit has two resonance links.A resonance link consists of resonant inductance LR, resonant capacitance CS, and its resonance frequency is fr; This resonant capacitance CS is the equivalent capacity after the resonant capacitance CS1 of two same capabilities and resonance capacitor C S2 parallel connection, and after the resonant capacitance CS1 that two capacity are identical and resonance capacitor C S2 parallel connection, capacity doubles.Another resonance link consists of magnetizing inductance Lm, resonant inductance LR and resonance capacitor C S, and its resonance frequency is fm.The computing formula of two resonance frequencys is as follows:
fr=1/[2π（LR·CS）1/2]；
fm=1/{2π[（LR+Lm）·CS]1/2}。
According to the difference of operating frequency, circuit can be divided into fm<f<fr, f=fr, tri-operating frequency ranges of f>fr.In these three operating frequency ranges, the no-voltage that all can realize soft switch is open-minded, thereby has reduced the turn-on consumption of switching circuit.Simultaneously at fm<f<fr operating frequency range, the electric current natural zero-crossing of the diode being connected with the secondary winding of main transformer TR, can realize zero-current switching, there is not reverse-recovery problems, therefore, fm<f<fr is the groundwork frequency separation of LLC resonant circuit.The stable state specific works process of LLC resonant circuit is as follows:
In a switch periods, have 6 working stages, be respectively t1～t2 stage, t2～t3 stage, t3～t4 stage, t4～t5 stage, t5～t6 and t6～t7 stage.
1) t1～t2 stage: when t=t1, MOSFET pipe S2-1 and MOSFET pipe S2-2 turn-off, resonance current is to the parasitic capacitance discharge of MOSFET pipe S1-1 and MOSFET pipe S1-2, until the voltage on MOSFET pipe S1-1 and MOSFET pipe S1-2 is zero, then diode conducting in the body of MOSFET pipe S1-1 and MOSFET pipe S1-2.This stage diode D1-1 and diode D1-2 conducting, the voltage on magnetizing inductance Lm is output voltage clamping, therefore, only has leakage inductance Ls and resonance inductance L R to participate in resonance with resonant capacitance CS1, resonant capacitance CS2.
2) t2～t3 stage: when t=t2, MOSFET pipe S1-1 and MOSFET pipe S1-2 conducting under the condition of no-voltage, the former limit winding of main transformer TR bears forward voltage; Diode D1-1 and diode D1-2 continue conducting, MOSFET pipe S2-1 and MOSFET pipe S2-2 and diode D2-1 and diode D2-2 cut-off.Now resonant capacitance CS1, resonant capacitance CS2 participate in resonance with leakage inductance Ls, resonant inductance LR, and magnetizing inductance Lm does not participate in resonance.
3) t3～t4 stage: when t=t3, MOSFET pipe S1-1 and still conducting of MOSFET pipe S1-2, and diode D1-1, diode D1-2 and diode D2-1, diode D2-2 are in off state, the secondary winding of main transformer TR and circuit are thrown off, magnetizing inductance Lm now, resonant inductance LR, leakage inductance Ls participates in resonance together with resonance capacitor C S1, resonant capacitance CS2.Magnetizing inductance Lm>> leakage inductance Ls in side circuit, therefore, can think that in this stage exciting curent and resonance current all remain unchanged.
4) t4～t5 stage: when t=t4, MOSFET pipe S1-1 and MOSFET pipe S1-2 turn-off, resonance current is to the parasitic capacitance discharge of MOSFET pipe S2-1 and MOSFET pipe S2-2, until the voltage on MOSFET pipe S2-1 and MOSFET pipe S2-2 is zero, then diode conducting in the body of MOSFET pipe S2-1 and MOSFET pipe S2-2.This stage diode D2-1 and diode D2-2 conducting, the voltage on magnetizing inductance Lm is output voltage clamping, therefore, only has leakage inductance Ls and resonance inductance L R to participate in resonance with resonant capacitance CS1, resonant capacitance CS2.
5) t5～t6 stage: when t=t5, MOSFET pipe S2-1 and MOSFET pipe S2-2 conducting under the condition of no-voltage, the former limit winding of main transformer TR bears reverse voltage; Diode D2-1 and diode D2-2 continue conducting, and MOSFET pipe S1-1, MOSFET pipe S1-2, diode D1-1 and diode D1-2 cut-off.Now only resonant capacitance CS1, resonant capacitance CS2 participate in resonance with resonant inductance LR, leakage inductance Ls, and the voltage on magnetizing inductance Lm is output voltage clamp, and does not participate in resonance.
6) t6～t7 stage: when t=t6, MOSFET pipe S2-1 and still conducting of MOSFET pipe S2-2, and diode D1-1, diode D1-2, diode D2-1 and diode D2-2 are in off state, the secondary winding of main transformer TR and circuit are thrown off, magnetizing inductance Lm now, resonant inductance LR, leakage inductance Ls participates in resonance together with resonance capacitor C S1, resonant capacitance CS2.Magnetizing inductance Lm>> leakage inductance Ls in side circuit, therefore, can think that in this stage exciting curent and resonance current all remain unchanged.
By above process, completed the soft switch cycle of a half-bridge LLCPFM frequency changer circuit.When t=t7, repeat the course of work in t1～t2 stage, so move in circles down.
Wherein, described resonant capacitance CS1 parallel diode D2, resonant capacitance CS2 parallel diode D3.
Diode can produce when back-emf or other reason occur electric capacity negative terminal current potential higher than positive terminal potential and protect electric capacity at circuit, prevents when electric capacity burst is applied in reverse voltage fragilely, and even the phenomenon of blast occurs.
Wherein, the negative electrode of described diode D1-1 also connects one end of capacitor C 5, and the other end of capacitor C 5 connects the anode of diode D1-1 by resistance R 4;
The negative electrode of described diode D2-1 also connects one end of capacitor C 11, and the other end of capacitor C 11 connects the anode of diode D2-1 by resistance R 5;
The negative electrode of described diode D2-2 also connects one end of capacitor C 10, and the other end of capacitor C 10 connects the anode of diode D2-2 by resistance R 7;
The negative electrode of described diode D1-2 also connects one end of capacitor C 12, and the other end of capacitor C 12 connects the anode of diode D1-2 by resistance R 6.
Wherein, described output capacitance C9 output capacitance CF in parallel also.
Wherein, the duty ratio of described MOSFET pipe S1-1, MOSFET pipe S1-2, MOSFET pipe S2-1 and MOSFET pipe S2-2 is all 0.5.
Wherein, the electrode input end of described switching signal is by capacitor C 7 ground connection, and the negative input of switching signal is by capacitor C 6 ground connection.
Wherein, the source electrode of described MOSFET pipe S1-1 and the drain electrode of MOSFET pipe S1-2 are connected respectively the negative electrode of bidirectional diode D1, the plus earth of bidirectional diode D1, the source electrode of described MOSFET pipe S2-1 and the drain electrode of MOSFET pipe S2-2 are connected respectively the anode of bidirectional diode D8, the minus earth of bidirectional diode D8, the anode of the negative electrode of bidirectional diode D1 and bidirectional diode D8 is connected by capacitor C 1.
Bidirectional diode is for clamper, amplitude limit.When the signal amplitude in circuit is greater than 0.7V, within being limited in 0.7V, be amplitude limit or clamper.
The embodiment of the control method of the half-bridge LLCPFM frequency changer circuit providing for the embodiment of the present invention below.The embodiment of the control method of half-bridge LLCPFM frequency changer circuit and above-mentioned half-bridge LLCPFM frequency changer circuit embodiment belong to same design, the detail content of detailed description not in the embodiment of the control method of half-bridge LLCPFM frequency changer circuit, can be with reference to the embodiment of above-mentioned half-bridge LLCPFM frequency changer circuit.
A control method that is applied to half-bridge LLCPFM frequency changer circuit described above, comprising:
According to the current value of load or magnitude of voltage, and the voltage gain of LLC resonant circuit and the relation of switching frequency are sent pwm signal to described switching circuit;
Described switching circuit generates and drives signal after pwm signal isolation is amplified, and offers respectively two groups of half-bridge submodules, to realize soft switch conversion.
According to the relation of the voltage gain M of half-bridge LLCPFM frequency changer circuit and switching frequency f, in no-voltage, open region, voltage gain M and switching frequency f are inversely proportional to, and therefore, can regulate the output voltage of LLC resonant circuit by modulation switch frequency.Control chip be take 50% duty ratio alternately as two groups of half-bridge submodules provide control signal, and changes operating frequency with load variations, and regulation output voltage or output current, be pulse frequency modulated (PFM).During design, according to the relation of voltage gain M and switching frequency f, choose suitable voltage gain scope, consider the height of rated voltage with load, and the frequency values of fr, two resonance points of fm, determine the scope of switching frequency, i.e. the maximum fmax of operating frequency and minimum value fmin; For prevent startup stage, impulse current is excessive, output voltage overshoot, need to progressively increase the voltage gain of LLC resonant circuit, in view of voltage gain and the switching frequency of LLC resonant circuit is inversely proportional to, for realizing soft switching function, should be from the downward scanning switch frequency of initial high frequency (fISS), until output voltage is set up.
Control method provided by the invention adopts LLC resonant technology to realize the zero voltage switch of MOSFET pipe, thereby greatly reduce the switching loss of circuit, realized efficient half-bridge soft switch conversion, adopt electric symmetrical Topology Structure Design, reduced electric stress and made circuit reaction fast, improved circuit stability and reduced the volume and weight of circuit.
Half-bridge LLCPFM frequency changer circuit and a control method thereof, adopt electric symmetrical topological structure, realized efficiently, half-bridge soft switch conversion fast, and circuit volume is little and stability is high.
Above content is only preferred embodiment of the present invention, for those of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, and this description should not be construed as limitation of the present invention.
Claims (10)
1. a half-bridge LLCPFM frequency changer circuit, is characterized in that, comprises switching circuit, LLC resonant circuit and rectifying output circuit;
Described switching circuit is formed by the cascade of two groups of half-bridge submodules, every group of half-bridge submodule comprises 2 MOSFET pipes, the intermediate node of two groups of half-bridge submodules connects the voltage input side of LLC resonant circuit, the Voltage-output side of LLC resonant circuit connects rectifying output circuit, two groups of half-bridge submodules the control utmost point connect respectively the switching signal of a pair of phase place complementation of input.
2. half-bridge LLCPFM frequency changer circuit according to claim 1, it is characterized in that, one group of half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S1-1 and MOSFET pipe S1-2, wherein MOSFET manages the electrode input end of the drain electrode connecting valve signal of S1-1, the source electrode of MOSFET pipe S1-1 connects the drain electrode of MOSFET pipe S1-2, and the source electrode of MOSFET pipe S1-2 connects intermediate node; One end of the grid contact resistance R8 of MOSFET pipe S1-1, the other end of resistance R 8 connects the source electrode of MOSFET pipe S1-1; One end of the grid contact resistance R2 of MOSFET pipe S1-2, the other end of resistance R 2 connects the source electrode of MOSFET pipe S1-2;
Another group half-bridge submodule in described two groups of half-bridge submodules comprises MOSFET pipe S2-1 and MOSFET pipe S2-2, wherein the drain electrode of MOSFET pipe S2-1 connects intermediate node, the source electrode of MOSFET pipe S2-1 connects the drain electrode of MOSFET pipe S2-2, the negative input of the source electrode connecting valve signal of MOSFET pipe S2-2; One end of the grid contact resistance R3 of MOSFET pipe S2-1, the other end of resistance R 3 connects the source electrode of MOSFET pipe S2-1; One end of the grid contact resistance R1 of MOSFET pipe S2-2, the other end of resistance R 1 connects the source electrode of MOSFET pipe S2-2.
3. half-bridge LLCPFM frequency changer circuit according to claim 1, it is characterized in that, described LLC resonant circuit comprises resonant capacitance CS1, resonant capacitance CS2, resonant inductance LR and main transformer TR, main transformer TR is integrated with leakage inductance Ls and magnetizing inductance Lm, wherein, the input of resonant inductance LR connects intermediate node, the output of resonant inductance LR connects one end of the former limit winding of main transformer TR, the other end of the former limit winding of main transformer TR connects respectively one end of resonant capacitance CS1 and one end of resonance capacitor C S2, the electrode input end of the other end connecting valve signal of resonant capacitance CS1, the negative input of the other end connecting valve signal of resonant capacitance CS2, the secondary winding of main transformer TR connects rectifying output circuit.
4. half-bridge LLCPFM frequency changer circuit according to claim 3, it is characterized in that, described rectifying output circuit comprises output capacitance C8, output capacitance C9, diode D1-1, diode D1-2, diode D2-1 and diode D2-2, wherein, one end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D2-1 and the anode of diode D1-1; The other end of the secondary winding of main transformer TR connects respectively the negative electrode of diode D1-2 and the anode of diode D2-2, the anode of diode D2-1 and the anode of diode D1-2 are connected respectively one end of output capacitance C8, the negative electrode of diode D1-1 and the negative electrode of diode D2-2 are connected respectively the other end of output capacitance C8, output capacitance C8 and output capacitance C9 are in parallel, the two ends of output capacitance C9 are shunt load also, thereby produces output voltage.
5. half-bridge LLCPFM frequency changer circuit according to claim 3, is characterized in that, described resonant capacitance CS1 parallel diode D2, resonant capacitance CS2 parallel diode D3.
6. half-bridge LLCPFM frequency changer circuit according to claim 4, is characterized in that, the negative electrode of described diode D1-1 also connects one end of capacitor C 5, and the other end of capacitor C 5 connects the anode of diode D1-1 by resistance R 4;
The negative electrode of described diode D2-1 also connects one end of capacitor C 11, and the other end of capacitor C 11 connects the anode of diode D2-1 by resistance R 5;
The negative electrode of described diode D2-2 also connects one end of capacitor C 10, and the other end of capacitor C 10 connects the anode of diode D2-2 by resistance R 7;
The negative electrode of described diode D1-2 also connects one end of capacitor C 12, and the other end of capacitor C 12 connects the anode of diode D1-2 by resistance R 6.
7. half-bridge LLCPFM frequency changer circuit according to claim 4, is characterized in that, described output capacitance C9 is output capacitance CF in parallel also.
8. half-bridge LLCPFM frequency changer circuit according to claim 2, is characterized in that, the electrode input end of described switching signal is by capacitor C 7 ground connection, and the negative input of switching signal is by capacitor C 6 ground connection.
9. half-bridge LLCPFM frequency changer circuit according to claim 2, it is characterized in that, the source electrode of described MOSFET pipe S1-1 and the drain electrode of MOSFET pipe S1-2 are connected respectively the negative electrode of bidirectional diode D1, the plus earth of bidirectional diode D1, the source electrode of described MOSFET pipe S2-1 and the drain electrode of MOSFET pipe S2-2 are connected respectively the anode of bidirectional diode D8, the minus earth of bidirectional diode D8, the anode of the negative electrode of bidirectional diode D1 and bidirectional diode D8 is connected by capacitor C 1.
10. a control method that is applied to half-bridge LLCPFM frequency changer circuit as claimed in claim 1, is characterized in that, comprising:
According to the current value of load or magnitude of voltage, and the voltage gain of LLC resonant circuit and the relation of switching frequency are sent pwm signal to described switching circuit;
Described switching circuit generates and drives signal after pwm signal isolation is amplified, and offers respectively two groups of half-bridge submodules, to realize soft switch conversion.
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