CN110993496B - Processing method of semiconductor wafer chip - Google Patents
Processing method of semiconductor wafer chip Download PDFInfo
- Publication number
- CN110993496B CN110993496B CN201911336771.7A CN201911336771A CN110993496B CN 110993496 B CN110993496 B CN 110993496B CN 201911336771 A CN201911336771 A CN 201911336771A CN 110993496 B CN110993496 B CN 110993496B
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- CN
- China
- Prior art keywords
- semiconductor wafer
- water
- wafer chip
- substrate
- based adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a processing method of a semiconductor wafer chip, which comprises the following steps: step 1, dripping a certain amount of water-based adhesive on a mounting station of a substrate; step 2, attaching the bonding surface of the semiconductor wafer chip to an installation station and fully contacting the bonding surface with the water-based adhesive; step 3, absorbing and removing the water-based adhesive overflowing in the bonding process of the semiconductor wafer chip; step 4, putting the substrate adhered with the semiconductor wafer chip into a pressing device, heating the semiconductor wafer chip and pressing the semiconductor wafer chip on the substrate; step 5, taking out the substrate after heating and pressing are finished, and naturally cooling; step 6, after cooling, placing the substrate on a grinding machine table, and grinding and processing the semiconductor wafer chip; and 7, after the grinding processing is finished, removing the water-based adhesive on the substrate by using hot water to obtain the ground semiconductor wafer chip. The water-based adhesive is adopted to replace the adhesive effect of the original wax in the semiconductor wafer chip processing process, the adhesive effect is good, the water can be dissolved, and the wastewater pollution is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a processing method of a semiconductor wafer chip.
Background
Semiconductor wafer chips (chips for short) need to be fixed on a sapphire substrate during grinding, and wax is adopted in the conventional bonding mode. When the chip is peeled off from the sapphire substrate after polishing, there are the following problems: wax removal liquid is required to remove the wax from the fixed chip. Because the dewaxing liquid contains substances such as normal acetone, rosin and the like, harmful wastewater is generated in the dewaxing process, and pollution exists.
Disclosure of Invention
In order to overcome the above disadvantages, the present invention provides a method for processing semiconductor wafer chips, which uses aqueous glue to replace wax to fix the chips, thereby reducing wastewater pollution.
In order to achieve the above purposes, the invention adopts the technical scheme that: a semiconductor wafer chip grinding water-based adhesive comprises the following steps:
step 1, dripping a certain amount of water-based adhesive on a mounting station of a substrate;
step 2, attaching the bonding surface of the semiconductor wafer chip to an installation station and fully contacting the bonding surface with the water-based adhesive;
step 3, absorbing and removing the water-based adhesive overflowing in the bonding process of the semiconductor wafer chip;
step 4, putting the substrate adhered with the semiconductor wafer chip into a pressing device, heating the semiconductor wafer chip and pressing the semiconductor wafer chip on the substrate;
Step 5, taking out the substrate after heating and pressing are finished, and naturally cooling;
step 6, after cooling, placing the substrate on a grinding machine table, and grinding and processing the semiconductor wafer chip;
and 7, after the grinding process is finished, removing the water-based adhesive on the substrate by using hot water to obtain the ground semiconductor wafer chip.
The water-based adhesive (water-based adhesive) is an environment-friendly adhesive prepared by using natural polymers or synthetic polymers as adhesives and water as a solvent or a dispersant to replace toxic organic solvents polluting the environment.
Further, the bonding tool in step 4 has a thermal bonding apparatus having a sealing cover member for forming a sealing environment including the heater table, and the substrate is placed on the heater table.
Further, the water-based adhesive is a water-soluble hot adhesive and comprises the following components in parts by weight: 64% of modified PU resin, 6% of water-based auxiliary agent, 24% of hot melt powder, 4% of water, 1% of curing agent, 0.5% of defoaming agent and 0.5% of flame retardant.
Further, the aqueous auxiliary agent is one of polyvinyl alcohol, polyvinyl pyrrolidine Chiung or polyether modified polyurethane compound.
Further, a downward pressing mold is arranged in the hot pressing device, and the pressing mold is made of marble.
Compared with the prior art, the invention adopts the water-based adhesive to replace the bonding effect of the original wax in the processing process of the semiconductor wafer chip, has good bonding effect, can be dissolved by water, and reduces the pollution of waste water; the aqueous glue is dripped on the substrate to realize the same fixing effect as wax, and can be removed by hot water after grinding, so that the use of dewaxing liquid (containing normal acetone, rosin and the like) and other polluted liquid is avoided; the process of harmful wastewater generated in the dewaxing process in the grinding process is reduced, the corresponding equipment investment is reduced, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic flow chart of an embodiment of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
Examples
Referring to fig. 1, the aqueous adhesive for polishing semiconductor wafer chips in the present embodiment includes the following steps:
s1, dripping a certain amount of water-based adhesive on the installation station of the substrate;
S2, attaching the bonding surface of the semiconductor wafer chip to the mounting station and fully contacting the water-based adhesive;
s3, absorbing the water-based adhesive overflowing in the bonding process of the semiconductor wafer chip;
s4, putting the substrate adhered with the semiconductor wafer chip into a stitching device, heating the semiconductor wafer chip and pressing the semiconductor wafer chip on the substrate;
s5, taking out the substrate after heating and pressing are finished, and naturally cooling;
s6, after cooling, placing the substrate on a grinding machine table, and grinding and processing the semiconductor wafer chip;
and S7, removing the aqueous adhesive on the substrate by using hot water after finishing the grinding process to obtain the ground semiconductor wafer chip.
The water-based adhesive in this embodiment is an environment-friendly adhesive prepared by using a natural polymer or a synthetic polymer as an adhesive and water as a solvent or a dispersant to replace a toxic organic solvent which pollutes the environment.
In this embodiment, the bonding tool in step 4 has a thermal bonding apparatus therein, the thermal bonding apparatus has a sealed cover member for forming a sealed environment including a heater table on which the substrate is placed. The thermocompression bonding device is provided with a downward pressing die made of marble. The pressing die adopting the marble is not easy to deform due to temperature, the pressing surface is stable, and the pressing effect is good.
The water-based adhesive in the embodiment is a water-soluble hot adhesive and comprises the following components in parts by weight: 64% of modified PU resin, 6% of water-based auxiliary agent, 24% of hot melt powder, 4% of water, 1% of curing agent, 0.5% of defoaming agent and 0.5% of flame retardant. The water-based auxiliary agent is one of polyvinyl alcohol, polyvinyl pyrrolidine Chiung or polyether modified polyurethane compound.
In addition to the aqueous adhesive of the polyvinyl alcohol aqueous adhesive, an ethylene acetate aqueous adhesive, an acrylic aqueous adhesive, a polyurethane aqueous adhesive, an epoxy aqueous adhesive, a phenol aqueous adhesive, a silicone aqueous adhesive, and a rubber aqueous adhesive may be used.
The invention adopts the water-based adhesive to replace the adhesive effect of the original wax in the processing process of the semiconductor wafer chip, has good adhesive effect, can be dissolved by water, and reduces the pollution of waste water; the aqueous glue is dripped on the substrate to realize the same fixing effect as wax, and can be removed by hot water after grinding, so that the use of dewaxing liquid (containing normal acetone, rosin and the like) and other polluted liquid is avoided; the process of harmful wastewater generated in the dewaxing process in the grinding process is reduced, the corresponding equipment investment is reduced, and the production efficiency is improved.
The above embodiments are provided only for illustrating the technical idea and features of the present invention, and the purpose of the present invention is to provide those skilled in the art with understanding and implementing the present invention, and not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the scope of the present invention.
Claims (5)
1. A method for processing semiconductor wafer chips is characterized in that: the method comprises the following steps:
step 1, dripping a certain amount of water-based adhesive on a mounting station of a substrate;
step 2, attaching the bonding surface of the semiconductor wafer chip to an installation station and fully contacting with the water-based adhesive;
step 3, absorbing and removing the water-based adhesive overflowing in the bonding process of the semiconductor wafer chip;
step 4, putting the substrate adhered with the semiconductor wafer chip into a pressing device, heating the semiconductor wafer chip and pressing the semiconductor wafer chip on the substrate;
step 5, taking out the substrate after heating and pressing are finished, and naturally cooling;
step 6, after cooling, placing the substrate on a grinding machine table, and grinding and processing the semiconductor wafer chip;
step 7, removing the aqueous glue on the substrate by using hot water after the grinding processing is finished to obtain a ground semiconductor wafer chip;
The water-based adhesive comprises the following components in parts by weight: 64% of modified PU resin, 6% of water-based auxiliary agent, 24% of hot melt powder, 4% of water, 1% of curing agent, 0.5% of defoaming agent and 0.5% of flame retardant.
2. The method as claimed in claim 1, wherein the step of processing the semiconductor wafer chip comprises the steps of: the pressing device in the step 4 is internally provided with a hot pressing device, the hot pressing device is provided with a closed cover component used for forming a closed environment including a heater workbench, and the substrate is placed on the heater workbench.
3. The method of claim 1, wherein: the water-based adhesive is a water-soluble hot adhesive.
4. The method of claim 1, wherein: the water-based auxiliary agent is one of polyvinyl alcohol, polyvinyl pyrrolidine Chiung or polyether modified polyurethane compound.
5. The method as claimed in claim 2, wherein: the hot pressing device is internally provided with a downward pressing die which is made of marble.
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CN201911336771.7A CN110993496B (en) | 2019-12-23 | 2019-12-23 | Processing method of semiconductor wafer chip |
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CN201911336771.7A CN110993496B (en) | 2019-12-23 | 2019-12-23 | Processing method of semiconductor wafer chip |
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CN110993496B true CN110993496B (en) | 2022-06-10 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1336867A (en) * | 1999-11-22 | 2002-02-20 | 住友化学工业株式会社 | Easily delaminatable laminate and resin composition for use therein |
CN1481428A (en) * | 2001-01-10 | 2004-03-10 | 化研科技株式会社 | Removable adhesive compsns and process for producing same |
CN103031101A (en) * | 2013-01-04 | 2013-04-10 | 张元平 | Waterborne hot-melt adhesive |
TW201332035A (en) * | 2011-09-07 | 2013-08-01 | Tokyo Electron Ltd | Bonding method, computer storage medium, and bonding system |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9533473B2 (en) * | 2014-04-03 | 2017-01-03 | Infineon Technologies Ag | Chip card substrate and method of forming a chip card substrate |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1336867A (en) * | 1999-11-22 | 2002-02-20 | 住友化学工业株式会社 | Easily delaminatable laminate and resin composition for use therein |
CN1481428A (en) * | 2001-01-10 | 2004-03-10 | 化研科技株式会社 | Removable adhesive compsns and process for producing same |
TW201332035A (en) * | 2011-09-07 | 2013-08-01 | Tokyo Electron Ltd | Bonding method, computer storage medium, and bonding system |
CN103031101A (en) * | 2013-01-04 | 2013-04-10 | 张元平 | Waterborne hot-melt adhesive |
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