CN110983282A - Device for replacing laser direct forming technology - Google Patents

Device for replacing laser direct forming technology Download PDF

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Publication number
CN110983282A
CN110983282A CN201911252415.7A CN201911252415A CN110983282A CN 110983282 A CN110983282 A CN 110983282A CN 201911252415 A CN201911252415 A CN 201911252415A CN 110983282 A CN110983282 A CN 110983282A
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chamber
cathode
energy ion
ion beam
low
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CN110983282B (en
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廖斌
欧阳晓平
罗军
张旭
吴先映
庞盼
陈琳
韩然
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Beijing Normal University
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Beijing Normal University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a device for replacing a laser direct forming technology.A substrate sample enters a preparation room through a transmission belt, and a blow-drying system is arranged in the preparation room to ensure the cleanness and the drying of the sample; after being dried, the matrix sample enters a pre-pumping chamber through a conveyor belt; after the air pumping is finished, the mixture enters a buffer chamber through a conveyor belt, and the buffer chamber performs high vacuum air pumping through a molecular pump; and finally, entering a processing chamber, performing high-energy ion implantation and low-energy ion beam deposition operation in the processing chamber, and finally collecting a sample to finish the processing flow. The invention provides a device for replacing a laser direct forming technology, and the method is used for forming a metal antenna with certain functions based on a high-energy ion beam technology, a low-energy ion beam technology and a related mask technology. The antenna prepared by the method has the characteristics of low cost, no need of laser powder, good corrosion resistance, high bonding strength, good film layer consistency, low surface roughness, environmental protection and the like.

Description

Device for replacing laser direct forming technology
Technical Field
The invention relates to the technical field of antenna preparation, in particular to a device for replacing a laser direct forming technology.
Background
With the increasing concern of people on the appearance of the smart phone, mobile phone manufacturers continuously innovate the appearance of the mobile phone at present. The thinner the mobile phone is, the more and more metal is used, which brings great challenge to the debugging of the mobile phone antenna, and the difficulty of antenna design is increased because the use frequency bands of the existing smart mobile phone are all more than 5. A currently common antenna implementation technology is LDS antenna. The LDS antenna is formed by directly plating a metal antenna pattern on a formed plastic support by using a laser technology. The LDS technology is realized by three key factors, and firstly, an LDS special material sensitive to laser etching laser is required to be used as a base material; secondly, a circuit design and laser engraving system; finally, the effective plating system and the process control are good. The current LDS antenna technology has three major disadvantages: firstly, the surface of a polymer needs to be coated or doped with laser powder, a metal core can be formed in the laser scanning process, and the technical difficulty of doping the laser powder is high; secondly, the roughness of the surface of the formed line is too large, which seriously affects the transmission of signals and increases the loss; thirdly, the pattern needs to be thickened through chemical plating after the metal core is formed, and the environmental protection performance is poor.
Therefore, how to provide a new antenna preparation technology is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a device for replacing the laser direct structuring technology, which can conveniently form the designed circuit, greatly improve the processing, and greatly reduce the manufacturing cost. Through technical replacement, the corrosion-resistant steel has the characteristics of high corrosion resistance, high stability, low cost and the like; the method is based on a high-energy ion beam technology, a low-energy ion beam technology and a related mask technology to form the metal antenna with certain functions. The antenna prepared by the method has the characteristics of low cost, no need of laser powder, good corrosion resistance, high bonding strength, good film layer consistency, low surface roughness, environmental protection and the like; the preparation method has important application prospect in the aspect of 5G antenna preparation.
In order to achieve the above purpose, the invention provides the following technical scheme:
an apparatus that replaces laser direct structuring technology, comprising: the device comprises a pre-pumping chamber, a buffer chamber and a processing chamber; the reserved sample sequentially passes through the pre-pumping chamber, the buffer chamber and the processing chamber; the pre-pumping chamber and the buffer chamber maintain the indoor vacuum degree; the processing chamber is used for carrying out high-energy ion implantation and low-energy ion deposition; the pre-pumping chamber, the buffer chamber and the processing chamber have reserved sample channels with the same size as the reserved sample.
Through the technical scheme, the invention has the technical effects that: the pre-pumping chamber has the function of maintaining the vacuum degree of 1 × 10-110Pa, preventing the deposition conditions from being not met or the equipment from being damaged due to too high a pressure difference; wherein the buffer chamber functions to maintain a vacuum degree of 1X 10-2-1×10-1Pa, preventing the deposition condition from being not satisfied or the equipment from being damaged due to too high pressure difference.
Preferably, in the above apparatus instead of the laser direct structuring technique, the apparatus further includes: a transmission device and a preparation chamber; the preparation chamber is connected with the pre-pumping chamber; the transmission device comprises a conveying belt, a driving roller and a driven roller; the number of the driving roller and the driven roller is at least one; the driving roller and the driven roller are connected through the conveying belt; the conveyor belt is arranged below the preparation chamber, the pre-pumping chamber, the buffer chamber and the processing chamber; the direction of rotation of the conveyor belt is from the preparation chamber to the treatment chamber.
Through the technical scheme, the invention has the technical effects that: the automation degree is higher, and the whole treatment process can be realized only by placing the reserved samples on the conveyer belt.
Preferably, in the above-mentioned apparatus instead of the laser direct structuring technique, a molecular pump is installed on the top of the buffer chamber.
Through the technical scheme, the invention has the technical effects that: the buffer chamber is pumped by a molecular pump in high vacuum to maintain the vacuum degree of 1 × 10-2-1×10-1Pa。
Preferably, in the above apparatus as an alternative to the laser direct structuring technique, the process chamber is provided with a high energy ion beam system and a low energy ion beam system at the top; the high energy ion beam system is mounted near one end of the buffer chamber.
Preferably, in an apparatus as described above instead of the laser direct structuring technique, the high energy ion beam system includes: the device comprises a first cathode, a second cathode, an accelerating electrode, a high-energy anode cylinder and a pulse trigger system; the two pulse trigger systems are respectively in one-to-one correspondence with the first cathode and the second cathode; the first cathode and the second cathode are arranged on a cathode base and are connected with the pulse triggering system; the cathode seat is arranged in the high-energy anode cylinder; the accelerating electrodes generate magnetic fields to accelerate the ions.
Furthermore, the high-energy ion beam system is composed of two pulse trigger systems, two groups of cathodes and accelerating electrodes; compared with the traditional 1 set of cathode corresponding to 1 set of trigger and acceleration system, the invention has obvious advantages in efficiency, and simultaneously performs special processing on the aspect of circuits (the trigger circuit is provided with alternate triggering, the alternate triggering frequency and the triggering interval can be controlled by external software; the invention can realize the purpose of transmitting plasma which has no difference between an upper source and a lower source and can be controlled in the processing process) and can inhibit the mutual interference of two sets of pulse trigger systems so as to realize normal work; meanwhile, the beam density and the processing speed are more than 2 times of the original beam density and processing speed. The distance between the accelerating electrode and the cathode is 0-30mm, and the distance between every two strip accelerating electrodes is 0-10mm, so that collimation can be realized to a certain degree.
Preferably, in the above apparatus instead of the laser direct structuring technique, the low energy ion beam system comprises: a direct current trigger system, a low-energy anode cylinder and a cathode; the direct current trigger systems correspond to the cathodes one by one; three cathodes are arranged; the direct current trigger system is connected with the cathode; the cathode is mounted in the low-energy anode cylinder.
Furthermore, the low-energy ion beam system consists of three direct current trigger systems and three groups of cathodes; compared with the traditional 1 set of cathode widening system, the invention has obvious advantages in efficiency, and meanwhile, special treatment is carried out on the aspects of circuit and mechanical design, so that the mutual interference of plasmas formed by three sets of trigger systems can be inhibited, and the normal work is realized; it is difficult to achieve stable operation of two or three arcs in a device according to the conventional art because strong interference is generated between adjacent cathodes after plasma formation, and the interference directly affects the stability of arc striking. The invention realizes the stable work of the electric arc by arranging the magnetic shielding baffle and arranging the floating positive potential on the baffle.
Preferably, in the above-mentioned device, a magnetic shielding baffle is arranged between the cathode and the cathode.
A method for replacing a laser direct structuring technology comprises the following specific steps:
the method comprises the following steps: performing glue spinning and line photoetching on the three-dimensional substrate;
step two: performing high-energy ion beam implantation on the three-dimensional substrate;
step three: carrying out low-energy ion beam deposition on the three-dimensional substrate;
step four: and removing the photoresist.
Preferably, in the above method instead of the laser direct structuring technique, in the first step, first, ultraviolet light is irradiated onto the surface of the three-dimensional substrate attached with a layer of photoresist film through a mask to cause a chemical reaction of the photoresist in the exposure region; dissolving and removing the photoresist in the exposed area or the unexposed area by a developing technology, so that the pattern on the mask is copied to the photoresist film; and finally, transferring the pattern to the three-dimensional substrate by utilizing an etching technology.
According to the technical scheme, compared with the prior art, the device for replacing the laser direct forming technology is provided, a substrate sample enters the preparation chamber through the transmission belt, and the preparation chamber is internally provided with the blow-drying system to ensure that the sample is clean and dry; after being dried, a matrix sample enters a pre-pumping chamber, the pre-pumping chamber and a preparation chamber through a conveyor belt, the entering size of the sample is reserved, the size of the sample is 510 multiplied by 5mm, and the rest of the sample is hermetically connected through an O ring; after the air pumping is finished, the mixture enters a buffer chamber through a conveyor belt, and the buffer chamber performs high vacuum air pumping through a molecular pump; the pre-pumping chamber and the buffer chamber are also reserved sample transmission channels, the size is 510 multiplied by 5mm, and the rest are sealed by O rings; and finally, entering a processing chamber, performing high-energy ion implantation and low-energy ion beam deposition operation in the processing chamber, and finally collecting a sample to finish the processing flow.
Compared with the existing LDS technology, the method for replacing the laser direct structuring technology (LDS) has the following advantages that:
1. compared with the existing LDS technology, the method has the advantages that the large-batch and high-efficiency treatment can be realized by treating the base material with the high-energy and low-energy ion beams, the obvious cost advantage is realized, meanwhile, the repeatability is strong, the cost is low, and the industrial production is easier to realize;
2. compared with the existing LDS technology, the laser powder is not required to be doped into the base material, and the preparation process of the base material can be greatly simplified;
3. compared with the existing LDS technology, the high-energy and low-energy ion implantation/deposition is more controllable, the bonding strength of the grown film is higher, and the stability is better;
4. compared with the existing LDS technology, the preparation process of the LDS does not need high temperature, the roughness of the surface of the substrate cannot be damaged, the roughness in the process can be accurately controlled, and the repeatability and the stability of the LDS technology are stronger than those of the LDS technology;
5. compared with the existing LDS technology, the method can be finished in one step in a vacuum chamber, chemical plating or electroplating is not needed, and the method is an obvious environment-friendly technology;
6. compared with the traditional high-low energy ion beam technology, the high/low energy of the invention can realize large-area and large-dosage surface treatment, and the treatment efficiency and the cost are both greatly reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of a high energy ion beam system according to the present invention;
fig. 3 is a schematic diagram of a low energy ion beam system of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a device for replacing a laser direct forming technology, which can conveniently form a designed circuit, greatly improve the treatment and greatly reduce the preparation cost. Through technical replacement, the corrosion-resistant steel has the characteristics of high corrosion resistance, high stability, low cost and the like; the method is based on a high-energy ion beam technology, a low-energy ion beam technology and a related mask technology to form the metal antenna with certain functions. The antenna prepared by the method has the characteristics of low cost, no need of laser powder, good corrosion resistance, high bonding strength, good film layer consistency, low surface roughness, environmental protection and the like; the preparation method has important application prospect in the aspect of 5G antenna preparation.
An apparatus, as shown in fig. 1, which replaces the laser direct structuring technique, comprises: a pre-pumping chamber 110, a buffer chamber 105, and a processing chamber 114; the reserved sample sequentially passes through the pre-pumping chamber 110, the buffer chamber 105 and the processing chamber 114; the pre-pumping chamber 110 and the buffer chamber 105 maintain the vacuum degree in the chamber; the process chamber 114 performs high energy ion implantation and low energy ion deposition; the pre-pump chamber 110, buffer chamber 105 and process chamber 114 have a pre-sample channel of the same size as the pre-sample.
In order to further optimize the above technical solution, the method further comprises: the transmission and preparation chamber 108; the preparation chamber 108 is connected with the pre-pumping chamber 110; the transmission device comprises a conveying belt 108, a driving roller 102 and a driven roller 103; the number of the drive roller 102 and the driven roller 103 is at least one; the drive roller 102 and the driven roller 103 are connected by a conveyor belt 108; the conveyor 108 is disposed below the preparation chamber 108, the pre-drawing chamber 110, the buffer chamber 105, and the processing chamber 114; the direction of rotation of the conveyor 108 is from the preparation chamber 108 to the processing chamber 114.
In order to further optimize the above technical solution, a molecular pump 111 is installed on the top of the buffer chamber 105.
In order to further optimize the above technical solution, the top of the processing chamber 114 is installed with a high energy ion beam system 112 and a low energy ion beam system 113; the high energy ion beam system 112 is mounted near one end of the buffer chamber 105.
To further optimize the above solution, as shown in fig. 2, the high energy ion beam system 112 includes: a first cathode 405, a second cathode 404, an accelerating electrode, a high-energy anode cylinder and a pulse trigger system; the number of the pulse trigger systems is two, and the two pulse trigger systems are respectively in one-to-one correspondence with the first cathode 405 and the second cathode 404; a first cathode 405 and a second cathode 404 are mounted on the cathode base 403 and connected to a pulse triggering system; the cathode base 403 is mounted in the high-energy anode cylinder 401; the acceleration electrodes 402 generate a magnetic field to accelerate the ions.
Further, the high-energy ion beam system 112 is composed of two pulse trigger systems, two sets of cathodes and accelerating electrodes; compared with the traditional method that 1 set of cathode corresponds to 1 set of trigger and acceleration electrode, the method has obvious advantages in efficiency, and meanwhile, special treatment is carried out on the aspect of a circuit, so that mutual interference of two sets of pulse trigger systems can be inhibited, and normal work is realized; meanwhile, the beam density and the processing speed are more than 2 times of the original beam density and processing speed. The distance between the accelerating electrode and the cathode is 0-30mm, and the distance between every two strip accelerating electrodes is 0-10mm, so that collimation can be realized to a certain degree.
To further optimize the above solution, as shown in fig. 3, the low energy ion beam system 113 includes: a direct current trigger system 303, a low energy anode barrel 301 and a cathode 302; the direct current trigger system 303 corresponds to the cathodes 302 one by one; three cathodes 302 are provided; the direct current trigger system 303 is connected with the cathode 302; the cathode 302 is mounted within a low energy anode can 301.
Further, the low-energy ion beam system 113 is composed of three direct current trigger systems and three groups of cathodes; compared with the traditional 1 set of cathode widening system, the invention has obvious advantages in efficiency, and meanwhile, special treatment is carried out on the aspects of circuit and mechanical design, so that the mutual interference of plasmas formed by three sets of trigger systems can be inhibited, and the normal work is realized; (the circuit sets up prevents quenching device and prevents outer arc starting device, when being close to receiving to be influenced by the arc and fast extinction, through increasing voltage, and magnetic field current realize the effect of steady arc) traditional technique hardly realizes realizing the stable work of two or three electric arcs in a device, because after forming plasma, can produce strong interference between the close negative pole, these interference directly influence the stability of arc starting. The invention realizes the stable work of the electric arc by arranging the magnetic shielding baffle and arranging the floating positive potential on the baffle.
In order to further optimize the above technical solution, a magnetic shielding baffle 304 is arranged between the cathode and the cathode.
A method for replacing a laser direct structuring technology comprises the following specific steps:
the method comprises the following steps: performing glue spinning and line photoetching on the three-dimensional substrate;
step two: performing high-energy ion beam implantation on the three-dimensional substrate;
step three: carrying out low-energy ion beam deposition on the three-dimensional substrate;
step four: and removing the photoresist.
It is to be understood that: the photoetching technology is a process technology which utilizes the principle of optical-chemical reaction and chemical and physical etching methods in the manufacture of integrated circuits to transfer circuit patterns onto the surface of a single crystal or a dielectric layer to form effective pattern windows or functional patterns. Photolithography refers to a technique of transferring a pattern on a reticle onto a substrate by means of a photoresist (also called a photoresist) under the influence of light.
In order to further optimize the technical scheme, in the first step, ultraviolet light irradiates the surface of the three-dimensional substrate attached with a layer of photoresist film through a mask plate to cause the photoresist in an exposure area to generate chemical reaction; dissolving and removing the photoresist in the exposed area or the unexposed area by a developing technology, so that the pattern on the mask is copied to the photoresist film; and finally, transferring the pattern to the three-dimensional substrate by utilizing an etching technology. The substrate is coated by photoresist, and the photoresist is designed according to the technical requirements, wherein the line width can be 3-100 mu m, and the line distance can be 3-1000 mu m.
In order to further optimize the technical scheme, in the second step, the high-energy ion beam is used for implanting the substrate, the ion energy is 10-300KeV, the pulse trigger frequency is 0-1000Hz, the pulse width is 0-1.2ms, the air pressure is 1 x 10 < -3 > -6 x 10 < -3 > Pa, the dose is 1 x 1015-1 x 1016/cm2, the processing size is 500-1000mm, the scanning speed is 1.5-5m/s, and the temperature is not higher than 40 ℃.
In order to further optimize the technical scheme, in the third step, low-energy ion beams are used for injecting the substrate, a magnetic filtration plasma metal source is selected, the arcing current is 140-280A, and the vacuum degree is 1 multiplied by 10-3-6×10-3Pa, scanning speed of 1.5-5m/s, deposition thickness of not less than 8 μm, and deposition temperature of not more than 60 deg.C;
the working process of the invention is as follows: the base body sample is lofted in a lofting section 109 and enters a preparation chamber 108 through a conveyor belt, and a blow-drying system is arranged in the preparation chamber 108 to ensure that the sample is clean and dry; after being dried, the matrix sample enters a pre-pumping chamber 110, the pre-pumping chamber 110 and a preparation chamber 108 through a conveyor belt 108, the entering size of the sample is reserved, the size of the sample is 510 mm multiplied by 5mm, and the rest of the sample is hermetically connected through an O ring; after the pumping is finished, the mixture enters the buffer chamber 105 through the conveyor belt 108, and the buffer chamber 105 is pumped by a molecular pump 111 under high vacuum; the pre-pumping chamber 110 and the buffer chamber 105 are also reserved sample transmission channels, the size is 510 multiplied by 5mm, and the rest are sealed by O rings; finally enters the processing chamber 114, high-energy ion implantation and low-energy ion beam deposition operations are carried out in the processing chamber 114, and finally the sample is collected in the collecting section 101, so that the processing flow is completed
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (6)

1. An apparatus for replacing a laser direct structuring technique, comprising: the device comprises a pre-pumping chamber, a buffer chamber and a processing chamber; the reserved sample sequentially passes through the pre-pumping chamber, the buffer chamber and the processing chamber; the pre-pumping chamber and the buffer chamber maintain the indoor vacuum degree; the reserved sample channel sizes of the pre-pumping chamber, the buffer chamber and the processing chamber are the same as the reserved sample; the top of the processing chamber is provided with a high-energy ion beam system and a low-energy ion beam system; the high-energy ion beam system is arranged at one end close to the buffer chamber, and the reserved sample sequentially passes through the processing chamber to carry out high-energy ion implantation and low-energy ion deposition.
2. The apparatus of claim 1, further comprising: a transmission device and a preparation chamber; the preparation chamber is connected with the pre-pumping chamber; the transmission device comprises a conveying belt, a driving roller and a driven roller; the number of the driving roller and the driven roller is at least one; the driving roller and the driven roller are connected through the conveying belt; the conveyor belt is arranged below the preparation chamber, the pre-pumping chamber, the buffer chamber and the processing chamber; the direction of rotation of the conveyor belt is from the preparation chamber to the treatment chamber.
3. An alternative laser direct structuring device as claimed in claim 1, wherein a molecular pump is mounted on top of said buffer chamber.
4. The apparatus of claim 1, wherein the high energy ion beam system comprises: the device comprises a first cathode, a second cathode, an accelerating electrode, a high-energy anode cylinder and a pulse trigger system; the two pulse trigger systems are respectively in one-to-one correspondence with the first cathode and the second cathode; the first cathode and the second cathode are arranged on a cathode base and are connected with the pulse triggering system; the cathode seat is arranged in the high-energy anode cylinder; the accelerating electrodes generate magnetic fields to accelerate the ions.
5. The apparatus of claim 1, wherein the low energy ion beam system comprises: a direct current trigger system, a low-energy anode cylinder and a cathode; the direct current trigger systems correspond to the cathodes one by one; three cathodes are arranged; the direct current trigger system is connected with the cathode; the cathode is mounted in the low-energy anode cylinder.
6. An alternative laser direct structuring apparatus as claimed in claim 5, wherein a magnetically shielded baffle is provided between the cathode and the cathode.
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