CN110964221B - 一种段节厚度编码的条形码纳米棒及其制备方法 - Google Patents

一种段节厚度编码的条形码纳米棒及其制备方法 Download PDF

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CN110964221B
CN110964221B CN201911069145.6A CN201911069145A CN110964221B CN 110964221 B CN110964221 B CN 110964221B CN 201911069145 A CN201911069145 A CN 201911069145A CN 110964221 B CN110964221 B CN 110964221B
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nanorod
poly
thickness
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CN110964221A (zh
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陈洪旭
李海东
程凤梅
陈超
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Jiaxing University
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Abstract

本发明涉及一种段节厚度编码的条形码纳米棒及其制备方法，制备方法为：在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；制得的一种段节厚度编码的条形码纳米棒为包含两个以上段节且至少一个段节的厚度不均匀的多段节纳米棒，不均匀即沿与多段节纳米棒长度方向垂直的方向递变。本发明的一种段节厚度编码的条形码纳米棒的制备方法简单易行，成本低廉，且可以批量制备；本发明的一种段节厚度编码的条形码纳米棒，至少一个段节的厚度不均匀，通过将形貌因素引入到纳米棒阵列中大大增加了其编码容量。

Description

一种段节厚度编码的条形码纳米棒及其制备方法
技术领域
本发明属于纳米编码材料技术领域，涉及一种段节厚度编码的条形码纳米棒及其制备方法。
背景技术
纳米编码材料由于自身大量的图案区分信息，从产品追踪到生物检测等方面都有重要的应用，也因此引起了人们的广泛关注。同超市里肉眼可见的黑白相间的产品标识码不同，纳米编码材料肉眼不可见，使得它可以用作贵重商品或重要材料的编码。纳米编码材料的广泛应用需要高的编码容量、低耗、高粒子产量和合适精确的检测体系，面对这些要求，很多的设计编码材料技术快速发展起来。其中，纳米棒由于其低花费、高产量、高长径比、易于制备和可以进行多种表面修饰等优点已经获得了广泛的关注，同球形条形码相比，条形码纳米棒因为自身长度的优势有利于增加编码容量和易于进行表面修饰，成为非常重要的一种结构。但是目前条形码纳米棒的构建主要是依赖氧化铝模板法，该方法仅可以沉积特定的金属，大大限制了其编码容量。
因此，研究一种增加条形码纳米棒的编码容量的方法具有十分重要的意义。
发明内容
本发明的目的为进一步提高条形码纳米棒的编码容量，提供一种段节厚度编码的条形码纳米棒及其制备方法。本发明首先制备递变厚度的多层膜，然后结合等离子体刻蚀技术制备纳米棒段节厚度递变的条形码纳米棒阵列，方法简单、成本低廉且可批量制备，大大增加了编码容量。
为达到上述目的，本发明采用的技术方案如下：
一种段节厚度编码的条形码纳米棒，为包含两个以上段节且至少一个段节的厚度不均匀的多段节纳米棒，不均匀即沿与多段节纳米棒长度方向垂直的方向递变(不均匀也可以是沿与多段节纳米棒长度方向垂直的方向先递增后递减，或先递减后递增等等，不均匀所参考的方向不必须为“与多段节纳米棒长度方向垂直的方向”，也可以为与多段节纳米棒长度方向呈锐角或钝角夹角的方向)。厚度不均匀，其形貌就不一样，形貌可以作为编码信息，假设形貌有m种，对于n段节的纳米棒而言，其编码容量为m的n次方。形貌越多，编码信息m就越多，编码容量就越大。
作为优选的技术方案：
如上所述的一种段节厚度编码的条形码纳米棒，厚度递变的段节的厚度递变方向相同或不同，厚度的递变方向不同，最后形貌中段节厚度的递变方向也会不同，厚度的递变方向不同可以是指厚度的递变方向相反，也可以是指厚度的递变方向成锐角、直角、钝角夹角。
如上所述的一种段节厚度编码的条形码纳米棒，各段节的材质选自于聚甲基丙烯酸羟乙酯、聚乙烯醇、聚对苯二甲酸乙二醇酯、聚二甲基硅氧烷、聚对二甲苯、光刻胶、光敏树脂、聚四氟乙烯、聚偏氟乙烯、聚乙烯、聚苯乙烯、聚碳酸酯、聚甲基丙烯酸甲酯、聚乙烯基亚胺、壳聚糖、海藻酸、透明质酸、明胶、胶原、聚L-赖氨酸、聚L-谷胺酸、羟丙基甲基纤维素、羟乙基纤维素、羧甲基纤维素、羧乙烯聚合物、聚丙烯酸、聚甲基丙烯酸、聚甲基丙烯酸乙二醇酯、聚乙二醇、聚丙三醇、聚(N-异丙基丙烯酰胺)、聚(N-正丙基丙烯酰胺)、聚(N-环丙基丙烯酰胺)、聚(N-异丙基甲基丙烯酰胺)、聚(N-乙基丙烯酰胺)、聚(N-(L)-(1-羟甲基)丙基甲基丙烯酰胺)、聚(4-乙烯吡啶)、聚[N-(2-甲基丙烯酰氧乙基)吡咯烷酮]、聚[N-(3-丙烯酰氧丙基)吡咯烷酮]、聚[N-(3-甲基丙烯酰氧丙基)吡咯烷酮]、聚[N-(2-丙烯酰氧丙基)吡咯烷酮]和聚[N-(1-甲基-2-丙烯酰氧乙基)吡咯烷酮]，其中，非相邻段节的材质可以相同或不同。
本发明还提供制备如上任一项所述的一种段节厚度编码的条形码纳米棒的方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°，聚合物是溶液，具有流动性，当基底倾斜角度不为0°时在重力作用下会使其向下坡方向留，因此导致膜层厚度成梯度递变。
作为优选的技术方案：
如上所述的方法，构建采用胶体晶体刻蚀法，胶体晶体刻蚀法由于简单、低成本、通用性强等特点被广泛用于微纳图案的大面积制备。
如上所述的方法，构建过程为：首先采用旋涂法或滴涂法将不同的聚合物溶液在同一基底表面依次沉积成膜，控制上层采用的聚合物溶液中的溶剂不能溶解下层采用的聚合物溶液中的聚合物(目的是为了形成层层分明的结构，避免各层混为一体)，然后在多层聚合物膜表面组装聚苯乙烯微球或二氧化硅微球，最后利用苯乙烯微球或刻蚀后的二氧化硅微球为掩板刻蚀下面的多层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒，其中，所述刻蚀是指将紧密堆积的二氧化硅微球刻蚀成非紧密堆积的阵列，当采用二氧化硅微球时，最终产品多段节纳米棒为圆柱形；当采用聚苯乙烯微球，最终产品多段节纳米棒为锥形棒。
上述的聚合物中，聚合物是薄膜态的，还可以将该聚合物薄膜作为基底，当其为基底时，基底可以被刻蚀成为多段节纳米棒的一个段节。
如上所述的方法，刻蚀采用等离子体刻蚀技术。
如上所述的方法，聚苯乙烯微球或二氧化硅微球的平均直径为300nm～3μm。
本发明通过在同一基底上制备出多种不同尺寸和递变厚度的纳米棒，且同一纳米棒上每个段节可以是固定的厚度也可以是递变的厚度，这种制备方法简单、低花费、可以批量制备，且通过将形貌因素引入到纳米棒阵列中大大增加了编码容量。
有益效果：
(1)本发明的一种段节厚度编码的条形码纳米棒的制备方法，简单易行，成本低廉，且可以批量制备；
(2)本发明的一种段节厚度编码的条形码纳米棒的制备方法，通过将形貌因素引入到纳米棒阵列中大大增加了其编码容量；
(3)本发明的一种段节厚度编码的条形码纳米棒的制备方法，可以通过调节旋涂或滴涂层数对聚合物纳米棒的段节数进行调节，从而增加编码容量；
(4)本发明的一种段节厚度编码的条形码纳米棒，至少一个段节的厚度不均匀，编码信息多，编码容量大。
附图说明
图1为本发明的多段节纳米棒的构建示意图；
其中，1-二氧化硅微球，2-聚合物a，3-聚合物b，4-基底。
具体实施方式
下面结合具体实施方式，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建示意图如图1所示，具体过程为：首先采用旋涂法将聚合物b 3溶液和聚合物a 2溶液在同一基底4(基底为硅基底)表面依次交替沉积成膜，然后在六层聚合物膜表面组装二氧化硅微球1，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球(平均直径为400nm)为掩板刻蚀下面的六层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，六层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000041
实施例2
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用旋涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在三层聚合物膜表面组装二氧化硅微球(平均直径为500nm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板，刻蚀下面的三层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，三层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
聚合物 溶剂 角度 方向 平均厚度
第一层(即最下层) 聚乙烯醇 水 0° —— 300nm
第二层 聚对二甲苯 氯仿 30° 水平向右 200nm
第三层 光刻胶 AZ4620中的溶剂 0° 水平向左 400nm
实施例3
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用旋涂法将不同的聚合物溶液在同一基底(基底为二氧化硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在三层聚合物膜表面组装二氧化硅微球，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的三层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，三层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
聚合物 溶剂 角度 方向 平均厚度
第一层(即最下层) 光刻胶 AZ5214中的溶剂 30° 水平向右 600nm
第二层 聚乙烯醇 水 10° 水平向右 100nm
第三层 光刻胶 AZ5214中的溶剂 0° 水平向左 300nm
实施例4
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用滴涂法将不同的聚合物溶液在同一基底(基底为聚四氟乙烯薄膜)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在四层聚合物膜表面组装二氧化硅微球(平均直径为1.5μm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的四层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，四层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
聚合物 溶剂 角度 方向 平均厚度
第一层(即基底) 聚四氟乙烯 —— 0° —— 300nm
第二层 聚偏氟乙烯 丙酮 30° 水平向右 400nm
第三层 壳聚糖 水 10° 水平向右 200nm
第四层 聚甲基丙烯酸羟乙酯 乙醇 0° 水平向左 150nm
实施例5
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用滴涂法将不同的聚合物溶液在同一基底(基底为聚对苯二甲酸乙二醇酯薄膜)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在六层聚合物膜表面组装二氧化硅微球(平均直径为400nm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的六层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，六层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000061
实施例6
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用旋涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在十一层聚合物膜表面组装二氧化硅微球(平均直径为1μm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的十一层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，十一层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000062
Figure BDA0002260386490000071
实施例7
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用旋涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在六层聚合物膜表面组装二氧化硅微球(平均直径为550nm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的六层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，六层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000072
Figure BDA0002260386490000081
实施例8
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用滴涂法将不同的聚合物溶液在同一基底(基底为石英基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在六层聚合物膜表面组装二氧化硅微球(平均直径为2.5μm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的六层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，六层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000082
实施例9
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用滴涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在十层聚合物膜表面组装二氧化硅微球(平均直径为1μm)，接着将紧密堆积的二氧化硅微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用刻蚀后的二氧化硅微球为掩板刻蚀下面的十层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，十层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000091
实施例10
段节厚度编码的条形码纳米棒的制备方法，基本同实施例3，不同之处在于沉积该不同的聚合物膜，控制基底相对于水平面倾斜一定的角度时，聚乙烯醇的厚度递增方向与光刻胶的段节递增方向之间的夹角不为0，该夹角为60°。
实施例11
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用滴涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在五层聚合物膜表面组装聚苯乙烯微球(平均直径为2μm)，最后利用聚苯乙烯微球为掩板刻蚀下面的五层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，五层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000101
实施例12
段节厚度编码的条形码纳米棒的制备方法，在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
多段节纳米棒采用胶体晶体刻蚀法构建，构建过程为：首先采用旋涂法将不同的聚合物溶液在同一基底(基底为硅基底)表面依次沉积成膜，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，然后在九层聚合物膜表面组装聚苯乙烯微球(平均直径为3μm)，接着将紧密堆积的聚苯乙烯微球采用等离子体刻蚀技术刻蚀成非紧密堆积的阵列，最后利用聚苯乙烯微球为掩板刻蚀下面的九层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒(一层聚合物膜即为一段节)，即为段节厚度编码的条形码纳米棒，其中，自下而上，九层聚合物膜中各层对应的聚合物、聚合物对应的溶剂、各层对应的基底相对于水平面的倾斜角度、各层的厚度递增的方向、各层的平均厚度的对比关系见下表。
Figure BDA0002260386490000102
Figure BDA0002260386490000111
实施例13
段节厚度编码的条形码纳米棒的制备方法，基本同实施例1，不同之处在于将聚苯乙烯溶液(溶剂为甲苯)替换为光敏树脂(溶剂为丙酮)。
实施例14
段节厚度编码的条形码纳米棒的制备方法，基本同实施例9，不同之处在于将聚(N-乙基丙烯酰胺)溶液(溶剂为乙醇)替换为聚(N-(L)-(1-羟甲基)丙基甲基丙烯酰胺)(溶剂为乙醇)。
实施例15
段节厚度编码的条形码纳米棒的制备方法，基本同实施例9，不同之处在于将聚[N-(2-丙烯酰氧丙基)吡咯烷酮]溶液(溶剂为N，N-二甲基甲酰胺)替换为聚[N-(1-甲基-2-丙烯酰氧乙基)吡咯烷酮](溶剂为N，N-二甲基甲酰胺)。
实施例16
段节厚度编码的条形码纳米棒的制备方法，基本同实施例9，不同之处在于将聚[N-(2-丙烯酰氧丙基)吡咯烷酮]溶液(溶剂为N，N-二甲基甲酰胺)替换为聚[N-(2-甲基丙烯酰氧乙基)吡咯烷酮](溶剂为N，N-二甲基甲酰胺)。
实施例17
段节厚度编码的条形码纳米棒的制备方法，基本同实施例2，不同之处在于将聚乙烯醇(溶剂为水)替换为聚乙二醇(溶剂为乙醇)。
实施例18
段节厚度编码的条形码纳米棒的制备方法，基本同实施例1，不同之处在于将聚苯乙烯溶液(溶剂为甲苯)替换为聚乙烯(溶剂为甲苯)。
实施例19
段节厚度编码的条形码纳米棒的制备方法，基本同实施例11，不同之处在于将羧甲基纤维素溶液(溶剂为水)替换为羟乙基纤维素(溶剂为水)。

Claims (6)

1.一种段节厚度编码的条形码纳米棒的制备方法，其特征是：在构建多段节纳米棒的过程中，每沉积一层聚合物膜时，控制基底相对于水平面倾斜一定的角度，基底倾斜的角度不全为0°；
构建采用胶体晶体刻蚀法，构建过程为：首先采用旋涂法或滴涂法将不同的聚合物溶液在同一基底表面依次沉积成膜，控制上层采用的聚合物溶液中的溶剂不能溶解下层采用的聚合物溶液中的聚合物，然后在多层聚合物膜表面组装聚苯乙烯微球或二氧化硅微球，最后利用苯乙烯微球或刻蚀后的二氧化硅微球为掩板刻蚀下面的多层聚合物膜制得多段节纳米棒阵列后释放，制得多段节纳米棒，其中，所述刻蚀是指将紧密堆积的二氧化硅微球刻蚀成非紧密堆积的阵列。
2.根据权利要求1所述的方法，其特征在于，刻蚀采用等离子体刻蚀技术。
3.根据权利要求2所述的方法，其特征在于，聚苯乙烯微球或二氧化硅微球的平均直径为300nm～3μm。
4.根据权利要求1～3任一项所述的方法制得的一种段节厚度编码的条形码纳米棒，其特征是：为包含两个以上段节且至少一个段节的厚度不均匀的多段节纳米棒，不均匀即沿与多段节纳米棒长度方向垂直的方向递变。
5.根据权利要求4所述的一种段节厚度编码的条形码纳米棒，其特征在于，厚度递变的段节的厚度递变方向相同或不同。
6.根据权利要求4所述的一种段节厚度编码的条形码纳米棒，其特征在于，各段节的材质选自于聚甲基丙烯酸羟乙酯、聚乙烯醇、聚对苯二甲酸乙二醇酯、聚二甲基硅氧烷、聚对二甲苯、光刻胶、光敏树脂、聚偏氟乙烯、聚乙烯、聚苯乙烯、聚碳酸酯、聚四氟乙烯、聚甲基丙烯酸甲酯、聚乙烯基亚胺、壳聚糖、海藻酸、透明质酸、明胶、胶原、聚L-赖氨酸、聚L-谷胺酸、羟丙基甲基纤维素、羟乙基纤维素、羧甲基纤维素、羧乙烯聚合物、聚丙烯酸、聚甲基丙烯酸、聚甲基丙烯酸乙二醇酯、聚乙二醇、聚丙三醇、聚(N-异丙基丙烯酰胺)、聚(N-正丙基丙烯酰胺)、聚(N-环丙基丙烯酰胺)、聚(N-异丙基甲基丙烯酰胺)、聚(N-乙基丙烯酰胺)、聚(N-(L)-(1-羟甲基)丙基甲基丙烯酰胺)、聚(4-乙烯吡啶)、聚[N-(2-甲基丙烯酰氧乙基)吡咯烷酮]、聚[N-(3-丙烯酰氧丙基)吡咯烷酮]、聚[N-(3-甲基丙烯酰氧丙基)吡咯烷酮]、聚[N-(2-丙烯酰氧丙基)吡咯烷酮]和聚[N-(1-甲基-2-丙烯酰氧乙基)吡咯烷酮]。
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