CN110957392A - 一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统 - Google Patents
一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统 Download PDFInfo
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Abstract
本发明涉及一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,解决了目前铜铟镓硒共蒸法的硒源加热的热场不均匀,硒蒸气不稳定,膜层均匀性不佳、成分偏差,甚至无法用于制造电池问题。本装置包括内部装有硒源的硒盒,硒盒顶面开设有硒蒸气喷口,硒盒的顶面或者侧面顶部设有可开合的硒源加料口,其特征在于:所述硒盒的顶面上方贴设有加热器,环绕硒盒底面和所有侧面设有温控系统,温控系统的温度低于加热器温度。本发明对硒源采用上加热、下冷却的温控方法,硒蒸气从硒源上表面蒸发生成,生成的硒蒸气平稳,气压稳定、线性可控,大大提高了硒源蒸发的稳定性,提升产品质量。
Description
技术领域
本发明属于新能源领域,涉及一种太阳能电池片生产设备,尤其是一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统。
背景技术
柔性太阳能电池片是在柔性可卷绕的基底上形成太阳能光伏材料镀层。铜铟镓硒(CIGS)薄膜电池是一种质量功率比高、稳定性好的太阳能光伏材料,被普遍认为是最具发展前景的柔性太阳能电池材料。多元共蒸法是最广泛应用的CIGS镀膜方法,利用铜、铟、镓、硒各元素共蒸,在基底表面反应形成多晶镀层。蒸汽镀膜的方式无法直接干预,只能通过蒸发源的蒸发气体控制来间接控制镀膜层的质量,蒸发源的稳定与否直接影响镀膜层的质量。
传统的硒源加热蒸硒方法,一般采用下加热的方式,加热器下置,在蒸发工艺过程中,加热器对硒源的热场分布不均匀,造成硒蒸发速率不一,而且下置的热源导致硒盒内下部温度高于上部,硒盒内的硒源上下形成比较强烈的对流,而且硒源液面下产生大量的蒸发气泡,导致硒蒸气的压力难以稳定控制,造成原材料浪费,膜层均匀性不佳、成分偏差,甚至无法用于制造电池。
发明内容
本发明的目的在于解决目前铜铟镓硒共蒸法的硒源加热的热场不均匀,硒蒸气压力难以稳定控制,造成原材料浪费,膜层均匀性不佳、成分偏差,甚至无法用于制造电池问题,提供一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统。
本发明解决其技术问题所采用的技术方案是:一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,包括内部装有硒源的硒盒,硒盒顶面开设有硒蒸气喷口,硒盒的顶面或者侧面顶部设有可开合的硒源加料口,其特征在于:所述硒盒的顶面上方贴设有加热器,环绕硒盒底面和所有侧面设有温控系统,温控系统的温度低于加热器温度。本装置对于硒蒸气硒源的加热系统,采用上加热、下冷却的温控方法,电热器的温度从上向下传导辐射,使硒源融化,硒源融化成液态后,下部通过温控的方法保持稳定的温度且下部温度低于上表面的温度,使硒源上热下冷,硒源液面以下减少上下之间的对流,且液位以下不产生蒸发气泡,保证硒源内部的稳定,硒蒸气从硒源上表面蒸发生成,生成的硒蒸气平稳,气压稳定、线性可控,大大提高了硒源蒸发的稳定性,提升产品质量。
作为优选,所述硒盒的内部设有若干导热石墨板,各导热石墨板竖向设置且相互平行,导热石墨板的顶边低于硒源的液面。导热石墨板用于硒源液面以下横向的热传导,使硒源横向的热力分布均匀稳定,减少横向对流,保证液态硒源稳定,从而使硒蒸气的生成稳定可控。
作为优选,所述导热石墨板的底边抵靠硒盒底面,导热石墨板的侧边抵靠硒盒侧壁,所述导热石墨板将硒盒底部分隔成栅格状。
作为优选,所述温控系统包括液冷槽,所述液冷槽内设有温控液,硒盒的下部浸泡在液冷槽中。温控液可以循环流动,采用“水浴”的方式保证硒盒内部温度的精准控制。
作为优选,所述液冷槽的液面高度不超过硒盒内硒源的液面高度,所述温控液的温度不超过硒源的蒸发温度。
作为优选,所述硒盒在硒源液面之上设置监控硒蒸气温度的热电偶。热电偶监控硒蒸气的温度,配合电池片镀膜流水线对膜层的在线监控探测器来探测膜层的厚度,来调控加热器的功率,以获取更好的铜铟镓硒镀膜效果。
作为优选,所述加热器的上方扣设有保温盖板。
作为优选,所述硒蒸气喷口的外端为喇叭形喷口。硒蒸气呈锥型向外喷出,与铜铟镓蒸汽均匀混合,使膜层更加均匀稳定。
作为优选,所述硒盒顶面的一侧为斜面,所述硒蒸气喷口在斜面处居中设置。
作为优选,所述硒盒为不锈钢材质。
本发明对硒源采用上加热、下冷却的温控方法,使硒源上热下冷,硒源液面以下减少上下之间的对流,且液位以下不产生蒸发气泡,保证硒源内部的稳定,硒蒸气从硒源上表面蒸发生成,生成的硒蒸气平稳,气压稳定、线性可控,大大提高了硒源蒸发的稳定性,提升产品质量。
附图说明
下面结合附图对本发明做进一步说明。
图1是本发明的一种结构示意图。
图2是本发明的一种侧向剖视结构示意图。
图3是本发明的一种俯视结构示意图。
图4是本发明的一种控制连接示意图。
图中:1、硒盒,2、硒源,3、导热石墨板,4、液冷槽,5、加热器,6、保温盖板,7、热电偶,8、硒蒸气喷口,9、硒源加料口,10、斜面。
具体实施方式
下面通过具体实施例并结合附图对本发明进一步说明。
实施例:一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,如图1、2所示。本装置包括内部装有硒源2的硒盒1,硒盒的内部设有若干导热石墨板3,各导热石墨板竖向设置且相互平行,导热石墨板3的顶边低于硒源2的液面。导热石墨板3的底边抵靠硒盒1底面,导热石墨板的侧边抵靠硒盒侧壁,所述导热石墨板3将硒盒1底部分隔成栅格状。如图2、3所示,硒盒1顶面的一侧为斜面10,硒蒸气喷口8在斜面处居中设置,斜面的一侧还设置有可开合的硒源加料口9。硒盒1侧壁在硒源2液面之上设置监控硒蒸气温度的热电偶7。
所述硒盒1的顶面上方贴设有加热器5,加热器为电热管,电热管可以为U型、S型、M型或者蛇形等各种异型盘绕。加热器的上方扣设有保温盖板6。环绕硒盒底面和各侧面环绕设置温控系统。温控系统为液冷槽4,所述液冷槽内设有温控液,硒盒1的下部浸泡在液冷槽4中。所述液冷槽的液面高度不超过硒盒内硒源的液面高度,所述温控液的温度不超过硒源的蒸发温度。
如图4所示,热电偶监控硒蒸气的温度,电池片镀膜流水线对膜层的在线监控探测器来探测膜层的厚度,两者的信息反馈到PLC控制器,PCL控制器通过加热控制器控制变压器功率,从而来调控加热器的功率,以获取更好的铜铟镓硒镀膜效果。
采用上加热、下冷却的温控方法,电热器的温度从上向下传导辐射,使硒源融化,硒源融化成液态后,下部通过温控的方法保持稳定的温度且下部温度低于上表面的温度,使硒源上热下冷,硒源液面以下减少上下之间的对流,且液位以下不产生蒸发气泡,保证硒源内部的稳定,硒蒸气从硒源上表面蒸发生成,生成的硒蒸气平稳,气压稳定、线性可控。
Claims (10)
1.一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,包括内部装有硒源的硒盒,硒盒顶面开设有硒蒸气喷口,硒盒的顶面或者侧面顶部设有可开合的硒源加料口,其特征在于:所述硒盒的顶面上方贴设有加热器,环绕硒盒底面和所有侧面设有温控系统,温控系统的温度低于加热器温度。
2.根据权利要求1所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述硒盒的内部设有若干导热石墨板,各导热石墨板竖向设置且相互平行,导热石墨板的顶边低于硒源的液面。
3.根据权利要求2所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述导热石墨板的底边抵靠硒盒底面,导热石墨板的侧边抵靠硒盒侧壁,所述导热石墨板将硒盒底部分隔成栅格状。
4.根据权利要求1所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述温控系统包括液冷槽,所述液冷槽内设有温控液,硒盒的下部浸泡在液冷槽中。
5.根据权利要求4所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述液冷槽的液面高度不超过硒盒内硒源的液面高度,所述温控液的温度不超过硒源的蒸发温度。
6.根据权利要求1或2或3或4或5所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述硒盒在硒源液面之上设置监控硒蒸气温度的热电偶。
7.根据权利要求1或2或3或4或5所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述加热器的上方扣设有保温盖板。
8.根据权利要求1或2或3或4或5所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述硒蒸气喷口的外端为喇叭形喷口。
9.根据权利要求1或2或3或4或5所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述硒盒顶面的一侧为斜面,所述硒蒸气喷口在斜面处居中设置。
10.根据权利要求1或2或3或4或5所述的一种柔性太阳能电池片铜铟镓硒共蒸法的硒源加热系统,其特征在于:所述硒盒为不锈钢材质。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112609159A (zh) * | 2020-12-16 | 2021-04-06 | 尚越光电科技股份有限公司 | 一种cigs薄膜太阳能电池热电偶装配的共蒸设备 |
CN112609160A (zh) * | 2020-12-29 | 2021-04-06 | 尚越光电科技股份有限公司 | 一种cigs共蒸法的蒸发源加热结构 |
CN113512701A (zh) * | 2021-06-29 | 2021-10-19 | 浙江尚越新能源开发有限公司 | 一种cigs柔性太阳能电池片硒源的线性源装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009105423A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
JP2010070829A (ja) * | 2008-09-22 | 2010-04-02 | Fujifilm Corp | 蒸発源用治具およびその製造方法 |
CN207845760U (zh) * | 2017-12-14 | 2018-09-11 | 深圳先进技术研究院 | 一种具有网栅导热件的热蒸发坩埚组件 |
CN110408891A (zh) * | 2019-07-31 | 2019-11-05 | 河南城建学院 | 一种叠层蒸发源装置 |
-
2019
- 2019-11-29 CN CN201911206355.5A patent/CN110957392B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009105423A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
JP2010070829A (ja) * | 2008-09-22 | 2010-04-02 | Fujifilm Corp | 蒸発源用治具およびその製造方法 |
CN207845760U (zh) * | 2017-12-14 | 2018-09-11 | 深圳先进技术研究院 | 一种具有网栅导热件的热蒸发坩埚组件 |
CN110408891A (zh) * | 2019-07-31 | 2019-11-05 | 河南城建学院 | 一种叠层蒸发源装置 |
Non-Patent Citations (1)
Title |
---|
李文科, 唐振方: "Se 量对CIGS 薄膜的结构及光学性质的影响", 《材料科学与工程学报》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112609159A (zh) * | 2020-12-16 | 2021-04-06 | 尚越光电科技股份有限公司 | 一种cigs薄膜太阳能电池热电偶装配的共蒸设备 |
CN112609159B (zh) * | 2020-12-16 | 2023-02-14 | 尚越光电科技股份有限公司 | 一种cigs薄膜太阳能电池热电偶装配的共蒸设备 |
CN112609160A (zh) * | 2020-12-29 | 2021-04-06 | 尚越光电科技股份有限公司 | 一种cigs共蒸法的蒸发源加热结构 |
CN113512701A (zh) * | 2021-06-29 | 2021-10-19 | 浙江尚越新能源开发有限公司 | 一种cigs柔性太阳能电池片硒源的线性源装置 |
CN113512701B (zh) * | 2021-06-29 | 2023-06-23 | 浙江尚越新能源开发有限公司 | 一种cigs柔性太阳能电池片硒源的线性源装置 |
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