CN110957380A - 一种选择性发射极perc电池的激光掺杂图形 - Google Patents
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- 239000004332 silver Substances 0.000 description 13
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- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
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- 230000002093 peripheral effect Effects 0.000 description 1
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Abstract
本发明公开了一种选择性发射极PERC电池的激光掺杂图形，包括若干组相互平行的主体模块，所述的主体模块包括两条相互平行的直线，所述直线的两端均设有向外弯曲的弧线。本方案中的弧形设置为同时向上、向外弯曲，正好可以应对PERC电池加工时正电极网版向外和两边变形的情况，从而提升网版变形后激光槽的对准问题，且此激光图形可适用于批量生产，工艺时间短、稳定性好。
Description
技术领域
本发明涉及一种选择性发射极PERC电池的激光掺杂图形。
背景技术
目前选择性发射极PERC电池的激光掺杂图形为等间距的直线图形。该图形中每根线与正银副栅线一一对应，在刻蚀正面氮化硅膜印刷正银电极时浆料落在激光槽内，形成正银副栅线。在太阳能电池正银电极的印刷过程中，网布在刮刀的压力下会出现变形，导致实际印刷在硅片上的正银电极发生偏移，容易出现正银副栅线与激光掺杂区对位不准的问题。
为了解决上述问题，中国专利CN208690277U公开了一种P型SE-PERC双面太阳能电池，其中具体公开了两种激光槽结构，结构一是：采用间距不等的开槽区设计，相邻激光槽之间的间距自中部向两侧呈由小变大的逐渐增大状，每条激光槽的宽度均相等。此种方法可以解决网布在刮刀的压力下沿着垂直的于刮刀前进的方向向两侧变形导致对位不准的问题，但是无法解决网布在刮刀压力下平行于刮刀前进方向的单侧变形。而且在初始加工不变形的状态下，会出现对位不准的情况。
结构二是：采用宽度不同的开槽区设计，激光槽的宽度自中部向两侧呈由窄变宽的逐渐增宽状，相邻激光槽之间的间距均相等。此种方法可以解决网布在刮刀的压力下沿着垂直的于刮刀前进的方向向两侧变形以及网布在刮刀压力下平行于刮刀前进方向的单侧变形导致对位不准的问题，但是此激光图形在初始加工不变形的状态下，会出现对位不准的情况，且在量产过程中较难实现，且制作时间长、稳定性差。
发明内容
本发明的目的是为了解决以上现有技术的不足，提出了一种选择性发射极PERC电池的激光掺杂图形。
一种选择性发射极PERC电池的激光掺杂图形，包括若干组相互平行的主体模块，所述的主体模块包括两条相互平行的直线，所述直线的两端均设有向外、向上弯曲的弧线。
优选地，所述主体模块中两条相互平行的直线之间的距离为a，0≤a≤100μm。
优选地，0≤a≤60μm。
优选地，同一组主体模块中两条向外弯曲的弧线间的最大距离为b，a≤b≤120μm。
有益效果：
1、此激光图形的主体模块为两条平行的直线、直线两端增加两条分别向外的弧线，其中主体模块的数量与正银副栅线的数量相等，且一个主体模块对应一根正银副栅线电极，使得印刷正银电极时浆料落在激光槽内，形成正银副栅线电极。
2、本方案中，两条相互平行的直线可以增加正银浆料落入激光槽的概率；同时两条分别向外弯曲设置的弧线可以预防网版变形后与激光槽对位不准的问题，可避免因此造成的EL黑边问题。
具体的，在加工时，网布在刮刀压力下，会出现以下两种变形：1、沿着垂直于刮刀前进方向向两侧变形；2、网布在刮刀压力下平行于刮刀前进方向的单侧变形。上述的两种变形均会导致对位不准的问题。
为了应对以上两种变形，本方案中的弧形设置为同时向上、向外弯曲，正好可以应对加工时向外和两边变形的情况，从而提升网版变形后激光槽的对准问题，且此激光图形可适用于批量生产，工艺时间短、稳定性好。
附图说明
图1是一种选择性发射极PERC电池的激光掺杂图形的整体示意图；
图2是图1中的局部放大图；
图3是现有技术下网版变形后生产出来的产品效果图；
图4是本方案中网版变形后生产出来的产品效果图；
具体实施方式
为了加深对本发明的理解，下面将结合实施例和附图对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
一种SE-PERC型太阳能电池选择性发射极结构的加工工艺，包括以下步骤：
1、硅片预处理：对硅片进行预清洗和绒面制备；
2、PN结制备：在P型硅正面进行扩散，形成N型发射极；
3、激光掺杂：在N型硅正面进行激光掺杂，形成激光槽，激光槽与正银副栅线相对应；
4、硅片再处理：去除扩散过程形成的磷硅玻璃和周边PN结，并对硅片背面进行抛光，形成高反射率的背表面；
5、膜层制备：对硅片进行热退火，然后在硅片背面进行氧化铝和氮化硅的膜层制备，在硅片正面进行氮化硅减反射膜的制备；
6、激光开槽：对硅片背面进行激光开槽，开通背面氮化硅膜、背面氧化铝膜后至硅片，形成背面激光开槽区；
7、印刷与烧结：在硅片表面进行背电极、背电场以及正面电极制备，并进行烘干、烧结，完成SE-PERC电池制备；
其中，第3步中激光掺杂的具体激光掺杂图形如图1-2所示：
一种选择性发射极PERC电池的激光掺杂图形，包括若干组相互平行的主体模块，所述的主体模块包括两条相互平行的直线，所述直线的两端均设有向外弯曲的弧线。其中两条相互平行的直线之间的距离为a，0≤a≤100μm，同一组主体模块中两条向外弯曲的弧线间的最大距离为b，a≤b≤120μm。
本方案中激光图形的两条平行直线可以增加正银浆料落入激光槽的概率；直线两端增加两条分别向外的弧线设计，通过弧形设计在可能出现的变形方向设置一定的补偿量，由此可以防止变形后出现对位不准的现象，可以预防网布变形后与激光槽对不准的问题，可避免因此造成的EL黑边问题。
如图3所示，当网布变形后出现与激光槽对位不准时，容易出现黑边问题。而采用本方案后，可以有效的解决黑边问题，解决后的效果如图4所示。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (4)
1.一种选择性发射极PERC电池的激光掺杂图形，其特征在于，包括若干组相互平行的主体模块，所述的主体模块包括两条相互平行的直线，所述直线的两端均设有向外弯曲的弧线。
2.根据权利要求1所述的一种选择性发射极PERC电池的激光掺杂图形，其特征在于，所述主体模块中两条相互平行的直线之间的距离为a，0≤a≤100μm。
3.根据权利要求1所述的一种选择性发射极PERC电池的激光掺杂图形，其特征在于，0≤a≤60μm。
4.根据权利要求1所述的一种选择性发射极PERC电池的激光掺杂图形，其特征在于，同一组主体模块中两条向外弯曲的弧线间的最大距离为b，a≤b≤120μm。
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