CN110957309A - 一种薄型化之集成式led封装光源及其制作方法 - Google Patents
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Abstract
本发明提供了一种薄型化之集成式LED封装光源及其制作方法,包括用于固定芯片的PCB基板,其特征在于:所述PCB基板上设置有锡膏,所述锡膏上等距离黏着设置有多个倒蓝光芯片,所述倒蓝光芯片上覆盖设置有用于保护所述倒蓝光芯片的封装透明胶层,所述封装透明胶层上贴合设置有荧光膜层;本发明能够通过直接将芯片封装稳定在基板上,从而减少LED封装光源的光学距离,实现LED封装光源的薄型化。
Description
技术领域
本发明涉及LED封装技术领域,特别是一种薄型化之集成式LED封装光源及其制作方法。
背景技术
现有技术中直下式显示器使用的SMD白光光源因使用了SMD的封装组件,其厚度较厚,封装好的光源厚度范围一般会达到0.5mm-1mm之间,这样的封装光源一般适用于光学距离OD在20mm-50mm之间的显示器。
发明内容
有鉴于此,本发明的目的是提供一种薄型化之集成式LED封装光源,能够通过直接将芯片封装稳定在基板上,从而减少LED封装光源的光学距离,实现LED封装光源的薄型化。
本发明采用以下方法来实现:一种薄型化之集成式LED封装光源,包括用于固定芯片的PCB基板,其特征在于:所述PCB基板上设置有锡膏,所述锡膏上等距离黏着设置有多个倒蓝光芯片,所述倒蓝光芯片上覆盖设置有用于保护所述倒蓝光芯片的封装透明胶层,所述封装透明胶层上贴合设置有荧光膜层。
进一步的,所述薄型化之集成式LED封装光源的厚度为d,所述厚度d的范围为0.1mm-0.5mm。
进一步的,所述PCB基板上方设置有背光模组,所述倒蓝光芯片到所述背光模组的光学距离为OD,所述光学距离OD的范围为5mm-15mm。
本发明的另一目的是提供一种薄型化之集成式LED封装光源的制作方法,能够让工作人员更好的进行制作薄型化之集成式LED封装光源。
所述一种薄型化之集成式LED封装光源的制作方法包括以下步骤:
步骤S1、将锡膏置附于所述PCB基板上;
步骤S2、将倒装蓝光芯片置于所述PCB基板的锡膏上;
步骤S3、经由回流焊炉加热固化锡膏,使倒装蓝光芯片黏着于PCB基板上;
步骤S4、使用硅胶以成型方式,在集成芯片的PCB基板上形成封装透明胶层,保护倒装蓝光芯片;
步骤S5、在倒装蓝光芯片的封装透明胶层上黏合所述荧光膜层完成光源。
进一步的,所述步骤S4中的成型方式为压模成型或热压成型。
本发明的有益效果在于:本发明可直接将倒蓝光芯片黏着在基板上,结构少了封装组件的导线架与导线的高度,光源的整体高度仅略高于倒转芯片即可,可借此达到薄型化光源,且通过加入第二层荧光膜层可依不同光色的需求,灵活贴合不同的荧光膜层,其厚度几乎等于蓝光芯片厚度(约0.15mm), 可大幅降低光学距离,且因封装后为蓝光的面光源,可依不同的色域需求, 选用黏合上层的荧光膜层。
附图说明
图1为本发明的结构示意图。
具体实施方式
下面结合附图对本发明做进一步说明。
请参阅图1所示,本发明提供了一实施例:一种薄型化之集成式LED封装光源,包括用于固定芯片的PCB基板1,所述PCB基板1上设置有锡膏(未图示),所述锡膏上等距离黏着设置有多个倒蓝光芯片2,黏着的方式为以印刷、沾胶或针筒挤压方式将锡膏置于PCB基板1的焊接位置,再将倒蓝光芯片2放置于锡膏上与PCB基板1贴合,然后将黏着好倒蓝光芯片2的PCB基板1放进回流焊炉, 进行锡膏固化,所述倒蓝光芯片2上覆盖设置有用于保护所述倒蓝光芯片2的封装透明胶层3,所述封装透明胶层3上贴合设置有荧光膜层4。
所述一种薄型化之集成式LED封装光源的制作方法包括以下步骤:
步骤S1、将锡膏置附于所述PCB基板上;
步骤S2、将倒装蓝光芯片置于所述PCB基板的锡膏上;
步骤S3、经由回流焊炉加热固化锡膏,使倒装蓝光芯片黏着于PCB基板上;
步骤S4、使用硅胶以成型方式,在集成芯片的PCB基板上形成封装透明胶层,保护倒装蓝光芯片;
步骤S5、在倒装蓝光芯片的封装透明胶层上黏合所述荧光膜层完成光源。
进一步的,所述步骤S4中的成型方式为压模成型或热压成型。
本发明中的倒蓝光芯片2为现有技术,本领域技术人员已经能够了解,在此不进行详细说明。
请继续参阅图1所示,本发明一实施例中,所述薄型化之集成式LED封装光源的厚度为d,所述厚度d的范围为0.1mm-0.5mm。与现有的集成式LED封装光源厚度相比,整体厚度大大减少,实现了薄型化LED封装光源。
请继续参阅图1所示,本发明一实施例中,所述PCB基板1上方设置有背光模组5,所述倒蓝光芯片2到所述背光模组5的光学距离为OD,所述光学距离OD的范围为5mm-15mm。与现有光学距离相比大大降低,从而实现了薄型化LED封装光源。
总之,本发明可直接将倒蓝光芯片黏着在基板上,结构少了封装组件的导线架与导线的高度,光源的整体高度仅略高于倒转芯片即可,大幅降低光学距离,可借此达到薄型化光源。
值得一提的是,步骤S2中的将倒装蓝光芯片置于所述PCB基板的锡膏上,采用了现有的贴装设备将倒装蓝光芯片贴装在PCB基板的锡膏上,所述贴装设备包括用于放置和传输PCB基板的导轨和用于放置锡膏的胶盘,所述胶盘设置于所述导轨前端正下方,所述导轨末端下方设置有用于放置倒装蓝光芯片的蓝膜,所述导轨末端上设置有用于取倒装蓝光芯片和凝固晶的吸嘴,所述导轨前端设置有用于取胶和点胶的点胶针;贴装的步骤为:
步骤S10、将PCB基板放置在导轨上,通过点胶针将胶盘上的锡膏取出;
步骤S20、取出后点胶针将锡膏点在PCB基板上;
步骤S30、将锡膏点在PCB基板上后,通过吸嘴将倒装蓝光芯片吸起,通过顶针将蓝膜顶起,让吸嘴将倒装蓝光芯片吸起;
步骤S40、吸嘴将倒装蓝光芯片吸起后,通过吸嘴将倒装蓝光芯片防止在PCB基板进行固定,从而实现将倒装蓝光芯片贴装在PCB基板上。
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。
Claims (5)
1.一种薄型化之集成式LED封装光源,包括用于固定芯片的PCB基板,其特征在于:所述PCB基板上设置有锡膏,所述锡膏上等距离黏着设置有多个倒蓝光芯片,所述倒蓝光芯片上覆盖设置有用于保护所述倒蓝光芯片的封装透明胶层,所述封装透明胶层上贴合设置有荧光膜层。
2.根据权利要求1所述的一种薄型化之集成式LED封装光源,其特征在于:所述薄型化之集成式LED封装光源的厚度为d,所述厚度d的范围为0.1mm-0.5mm。
3.根据权利要求1所述的一种薄型化之集成式LED封装光源,其特征在于:所述PCB基板上方设置有背光模组,所述倒蓝光芯片到所述背光模组的光学距离为OD,所述光学距离OD的范围为5mm-15mm。
4.一种如权利要求1的薄型化之集成式LED封装光源的制作方法,其特征在于,包括以下步骤:
步骤S1、将锡膏置附于所述PCB基板上;
步骤S2、将倒装蓝光芯片置于所述PCB基板的锡膏上;
步骤S3、经由回流焊炉加热固化锡膏,使倒装蓝光芯片黏着于PCB基板上;
步骤S4、使用硅胶以成型方式,在集成芯片的PCB基板上形成封装透明胶层,保护倒装蓝光芯片;
步骤S5、在倒装蓝光芯片的封装透明胶层上黏合所述荧光膜层完成光源。
5.根据权利要求4的薄型化之集成式LED封装光源的制作方法,其特征在于:所述步骤S4中的成型方式为压模成型或热压成型。
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Application publication date: 20200403 |