CN110942990A - AlGaN/GaN HEMT heat management method - Google Patents
AlGaN/GaN HEMT heat management method Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 31
- 238000007726 management method Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 30
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 26
- 239000010432 diamond Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 13
- 239000006185 dispersion Substances 0.000 claims abstract description 10
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000011241 protective layer Substances 0.000 claims abstract description 4
- 230000007480 spreading Effects 0.000 claims description 9
- 238000003892 spreading Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract
The invention discloses a heat management method of an AlGaN/GaN HEMT, wherein on an AlGaN/GaN/Si substrate, deep grooves are etched on an AlGaN layer and a GaN layer by using an ICP method for insulation between devices; depositing an ohmic contact electrode by using an electron beam evaporation method; growing a passivation layer by adopting a PECVD method; etching the passivation layer at the source and drain electrodes; growing a diamond heat dispersion layer by adopting a PECVD method; etching the diamond layer by using SiN as a protective layer and adopting an ICP (inductively coupled plasma) method to form a source electrode window, a drain electrode window and a grid electrode window; etching the passivation layer at the gate electrode; electron beam evaporation deposits the gate electrode. The invention can effectively reduce the channel temperature of the device, increase the leakage current output of the device and obtain better heat dissipation effect.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a heat management method of an AlGaN/GaN HEMT.
Background
The third generation semiconductor material GaN and its alloy AlGaN have large spontaneous and piezoelectric polarization charges. When these two materials form a heterojunction, a higher polarization charge density is generated at the AlGaN/GaN interface, resulting in a high density of two-dimensional electron gas (2DEG) formed in the GaN channel near the interface. The source, drain and gate electrodes are fabricated on the heterojunction to form a field effect transistor, commonly referred to as an AlGaN/GaN HEMT (high electron mobility transistor). Due to the high carrier concentration of the device and the wide forbidden bandwidth of the GaN material, the AlGaN/GaN HEMT has many excellent characteristics, such as higher power output, higher breakdown voltage bearing, fast switching speed and low loss when used as a switch, capability of working in severe environments such as high temperature and high radiation, and the like, and has great application potential in the military and civil fields.
When the AlGaN/GaN HEMT operates under a high power condition, the channel temperature of the AlGaN/GaN HEMT also rises correspondingly, so that the mobility of carriers is reduced, and the leakage current of the device is reduced, namely the self-heating effect. Therefore, it is desirable to use appropriate thermal management methods for devices to reduce their channel temperature and increase the leakage current output. The heat management methods that have been reported to be used are as follows:
1) the substrate of the device is removed by etching, and then the high-thermal-conductivity heat sink is bonded at an atomic level, wherein the mainly used heat sink materials are diamond and AlN. However, the method has the problems of complex manufacturing process, high cost and poor stability; moreover, the newly welded heat sink and the channel are separated by about 2 microns of GaN buffer layers, and the distance is long, so that the heat dissipation effect is influenced; meanwhile, an interface layer with high thermal resistance exists between the buffer layer GaN and the newly welded heat sink, which also influences the heat dissipation effect.
2) Cavities are etched in the substrate to a depth of about the thickness of the substrate, and then a diamond film with high thermal conductivity is deposited in the cavities to act as a heat sink. With this method, since there is a large amount of diamond to be deposited, the growth rate is slow, which affects the practicality. On the other hand, the high thermal conductivity diamond is also separated from the channel by the GaN buffer layer, which affects the heat dissipation effect.
3) AlN is passivated directly or bonded as a heat sink on the device surface, and the insufficient high AlN thermal conductance (about 320W/mK) in this approach limits the effectiveness of its thermal management to some extent.
Disclosure of Invention
The invention aims to solve the technical problems that the heat dissipation efficiency is low due to high channel temperature and low leakage current output of the conventional device, and provides a heat management method of an AlGaN/GaN HEMT (high Electron mobility transistor), so that the heat dissipation problem of the AlGaN/GaN HEMT device is solved.
The invention is realized by the following technical scheme:
a heat management method of an AlGaN/GaN HEMT comprises the following steps:
(1) etching deep grooves on the AlGaN layer and the GaN layer by using an ICP (inductively coupled plasma) method on the AlGaN/GaN/Si substrate for insulation between devices;
(2) depositing an ohmic contact electrode by using an electron beam evaporation method;
(3) growing a passivation layer by adopting a PECVD method;
(4) etching the passivation layer at the source and drain electrodes;
(5) growing a diamond heat dispersion layer by adopting a PECVD method;
(6) etching the diamond layer by using SiN as a protective layer and adopting an ICP (inductively coupled plasma) method to form a source electrode window, a drain electrode window and a grid electrode window;
(7) etching the passivation layer at the gate electrode;
(8) electron beam evaporation deposits the gate electrode.
Specifically, the ohmic contact is a Ti/Al/Ni/Au multilayer structure; the passivation layer is SiO2Or a SiN material.
Wherein the thickness of the passivation layer is 10-30 nm. The thickness of the diamond heat dispersion layer is 500-1000 nm. In step (8), the gate electrode is Ni/Au.
Because the heat source of the device is concentrated at the edge of the grid electrode close to the drain electrode, the diamond heat dispersion layer integrated in the invention is very close to the heat source (only the AlGaN barrier layer with the interval of about 20nm is arranged in the middle), and the thermal conductivity of the diamond is high (about 1000-. For example, at the same power dissipation, when AlN (with a thermal conductance of about 320W/mK) is used as the thermal spreading layer, the leakage current increases by 8%, the maximum channel temperature decreases by 13%, which is 14% lower than the leakage current obtained by using the thermal management method of the present invention, and the maximum channel temperature decreases by 28%.
Compared with the existing structure, the structure of the device can effectively improve the leakage current, can also reduce the maximum temperature of a channel, and effectively improves the heat dissipation efficiency.
And, after depositing the gate electrode, a metal layer is deposited by electron beam evaporation. The deposition of a metal layer can be more beneficial to the use of the device and external connection.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the heat management method of the AlGaN/GaN HEMT, the diamond layer is integrated on the surface of the AlGaN/GaN HEMT to be used as the heat dispersion layer, so that the channel temperature of a device can be effectively reduced, the leakage current output of the device is increased, and the better heat dispersion effect is achieved;
meanwhile, the method has the advantages of simple process, good stability, lower cost and more convenience for long-term use.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic view of an AlGaN/GaN/Si substrate structure according to the present invention;
FIG. 2 is a schematic diagram of a structure of etched deep trenches;
FIG. 3 is a schematic diagram of a deposited ohmic structure;
FIG. 4 is a schematic view of a passivation layer;
FIG. 5 is a schematic diagram of a passivation layer structure at etched source and drain electrodes;
FIG. 6 is a schematic view of a high thermal conductivity diamond heat spreading layer structure;
FIG. 7 is a schematic diagram of a structure for etching a diamond layer;
FIG. 8 is a schematic diagram of etching a dielectric structure at a gate;
FIG. 9 is a schematic diagram of the gate electrode structure deposition;
FIG. 10 is a schematic diagram of drain current and channel maximum temperature as a function of drain voltage;
FIG. 11 is a graph showing the variation of the channel temperature (T) from source to drain;
fig. 12 is a graph showing the change with time of the leak current and the maximum temperature of the channel in the presence or absence of the diamond heat dispersion layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
The invention relates to a heat management method of an AlGaN/GaN HEMT.A basic structure of a wafer is an AlGaN/GaN/Si substrate, the structure of the wafer is shown in figure 1, and the AlGaN layer, the GaN layer and the Si substrate are sequentially arranged from top to bottom in figure 1;
(2) etching a deep trench using an ICP method, as shown in fig. 2, for insulation between devices;
(3) depositing Ti/Al/Ni/Au ohmic contact electrode by electron beam evaporation method, as shown in FIG. 3;
(4) growing 20nm SiO by PECVD method2Or SiN passivation layer as shown in fig. 4 to eliminate surface state and suppress current collapse effect;
(5) etching the passivation layer at the source and drain electrodes, as shown in fig. 5;
(6) as shown in fig. 6, a high thermal conductivity diamond thermal dispersion layer of 500nm is grown by using a PECVD method;
(7) as shown in fig. 7, using SiN as a protective layer, the diamond layer was etched using the ICP method to form source, drain and gate windows;
(8) etching the dielectric SiO at the gate as shown in FIG. 82Or SiN;
(9) as shown in FIG. 9, electron beam evaporation is used to deposit Ni/Au gate electrode;
(10) e-beam evaporation deposits a layer of metal to facilitate connection to the outside.
By the technical scheme, the self-heating effect of the AlGaN/GaN HEMT can be reduced, and the leakage current output of the device is increased.
Example 2
The AlGaN/GaN HEMT was tested for the leakage current (IDS) and the maximum channel temperature (Tmax) with and without the surface-integrated diamond heat spreading layer as a function of the leakage Voltage (VDS), and the results shown in fig. 10 were obtained.
Fig. 10 depicts simulation results comparing the drain current (IDS) and channel maximum temperature (Tmax) versus drain Voltage (VDS) for AlGaN/GaN HEMTs with and without surface integrated diamond thermal spreading layers. As can be seen from fig. 10, the leakage current of the device with the surface-integrated diamond is significantly increased, and the maximum temperature of the channel is significantly decreased, for example, at a leakage voltage of 15V, the leakage current is increased by 14%, and the maximum temperature of the channel is decreased by 28%. The effect of this heat dissipation is more pronounced as the device drain voltage increases, i.e. the power is greater.
Example 3
The variation of the channel temperature (T) from the source to the drain of the device was detected, resulting in fig. 11.
Fig. 11 depicts simulation results of the distribution of the channel temperature (T) from the source to the drain device along the AlGaN/GaN interface. It can be seen that the device has a diamond heat spreading layer with a significant reduction in channel temperature, particularly at the edge of the gate near the drain, where the temperature is highest in the channel.
Example 4
The leakage current and the change of the maximum channel temperature with time (t) of the device with and without the diamond heat dispersion layer were detected by comparison, and fig. 12 was obtained.
Fig. 12 depicts simulation results comparing the variation of the drain current and the maximum channel temperature with time (t) with and without a diamond thermal spreading layer when the device is operated in a transient condition, i.e., the drain voltage VDS of the device is 15V and the gate voltage jumps from the off-state to the on-state (i.e., the gate voltage is 0V). It can be seen from the figure that the self-heating effect of the device is not significant in the initial stage of the device's transition to the on-state, and thus the heat spreading layer has not yet acted. As time increases, the channel temperature also gradually increases and the self-heating effect starts to become significant, at which time the heat spreading layer also starts to function, which makes the leakage current and the channel temperature less affected by the self-heating effect.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A heat management method of an AlGaN/GaN HEMT is characterized by comprising the following steps:
(1) etching deep grooves on the AlGaN layer and the GaN layer by using an ICP (inductively coupled plasma) method on the AlGaN/GaN/Si substrate for insulation between devices;
(2) depositing an ohmic contact electrode by using an electron beam evaporation method;
(3) growing a passivation layer by adopting a PECVD method;
(4) etching the passivation layer at the source and drain electrodes;
(5) growing a diamond heat dispersion layer by adopting a PECVD method;
(6) etching the diamond layer by using SiN as a protective layer and adopting an ICP (inductively coupled plasma) method to form a source electrode window, a drain electrode window and a grid electrode window;
(7) etching the passivation layer at the gate electrode;
(8) electron beam evaporation deposits the gate electrode.
2. The method of claim 1, wherein the ohmic contact is a Ti/Al/Ni/Au multilayer structure.
3. The method of claim 1, wherein the passivation layer is SiO2 or SiN.
4. The method of claim 1, wherein the passivation layer has a thickness of 10-30 nm.
5. The method of claim 1, wherein the thickness of the diamond heat spreading layer is 500-1000 nm.
6. The method of claim 1, wherein in step (8) the gate electrode is Ni/Au.
7. The method of claim 1, wherein the gate electrode is deposited and a metal layer is deposited by electron beam evaporation.
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| CN201911294276.4A CN110942990A (en) | 2019-12-16 | 2019-12-16 | AlGaN/GaN HEMT heat management method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022056922A1 (en) * | 2020-09-21 | 2022-03-24 | 华为技术有限公司 | Transistor device and electronic apparatus |
| CN118412273A (en) * | 2024-07-03 | 2024-07-30 | 成都航天博目电子科技有限公司 | Gate preparation method of GaN HEMT device, gate and GaN HEMT device |
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| US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
| US20090146186A1 (en) * | 2007-12-07 | 2009-06-11 | The Government of the United State of America, as represented by the Secretary of the Navy | Gate after Diamond Transistor |
| CN105552047A (en) * | 2015-12-14 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | AlGaN/GaN HEMT transistor and making method thereof |
| CN108133961A (en) * | 2017-12-20 | 2018-06-08 | 成都海威华芯科技有限公司 | A kind of GaN_HEMT device preparation methods based on aluminum nitride barrier layers |
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- 2019-12-16 CN CN201911294276.4A patent/CN110942990A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
| US20090146186A1 (en) * | 2007-12-07 | 2009-06-11 | The Government of the United State of America, as represented by the Secretary of the Navy | Gate after Diamond Transistor |
| CN105552047A (en) * | 2015-12-14 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | AlGaN/GaN HEMT transistor and making method thereof |
| CN108133961A (en) * | 2017-12-20 | 2018-06-08 | 成都海威华芯科技有限公司 | A kind of GaN_HEMT device preparation methods based on aluminum nitride barrier layers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022056922A1 (en) * | 2020-09-21 | 2022-03-24 | 华为技术有限公司 | Transistor device and electronic apparatus |
| CN118412273A (en) * | 2024-07-03 | 2024-07-30 | 成都航天博目电子科技有限公司 | Gate preparation method of GaN HEMT device, gate and GaN HEMT device |
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Application publication date: 20200331 |