CN110729346B - Wide-forbidden-band semiconductor rectifying device with low on-resistance and high voltage withstand capability - Google Patents
Wide-forbidden-band semiconductor rectifying device with low on-resistance and high voltage withstand capability Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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Abstract
The invention relates to a wide band gap semiconductor rectifying device with low on-resistance and high voltage withstand capability, which comprises: the first metal electrode is sequentially provided with a heavily doped first conductive type conductive layer and a lightly doped first conductive type conductive layer, a deep groove structure is arranged in the lightly doped first conductive type conductive layer, a second conductive type region is arranged at the bottom of the deep groove structure, a second metal electrode is arranged on the upper surface of the lightly doped first conductive type conductive layer, an electron conductive channel structure is arranged between and outside the deep groove structures, and the deep groove structures and the electron conductive channel structures are parallel to each other and are equal in interval.
Description
Technical Field
The invention relates to a rectifier diode, in particular to a wide-band-gap semiconductor rectifier device with low on-resistance and high voltage withstand capability.
Background
The third generation semiconductor materials are mainly wide band gap semiconductor materials represented by silicon carbide, gallium nitride, diamond and aluminum nitride. In the aspect of power electronic devices, the research on silicon carbide and gallium nitride is mature, and the silicon carbide and gallium nitride are hot spots in the research field of semiconductor materials and devices at present. Among them, gallium nitride has many excellent electrical characteristics such as: the wide forbidden band enables the gallium nitride material to withstand higher operating temperatures, with a larger critical breakdown electric field, which means that the device can withstand higher operating voltages. Further, as a main structural representation in gallium nitride-based heterojunction materials, aluminum gallium nitride/gallium nitride forms two-dimensional electron gas, which has excellent characteristics of high electron mobility. Gallium nitride is an excellent material for manufacturing high-frequency, high-voltage, high-power semiconductor devices.
At present, common rectifying devices mainly comprise a PN junction diode, a Schottky diode, a novel structure JBS and a TMBS. Compared with PN junction diode, the common Schottky diode has lower forward turn-on voltage, which is mainly determined by the metal-semiconductor contact formed by Schottky contact, so that switching power loss can be effectively reduced. The conventional trench schottky diode structure is shown in fig. 1, and mainly includes a first metal electrode, a heavily doped first-type conductive layer, a lightly doped first-type conductive layer, a multi-trench structure formed in the lightly doped first-type conductive layer at equal intervals, a second-type conductive region at the bottom of the deep trench structure, and a second metal electrode above the lightly doped first-type conductive layer.
The conventional planar schottky diode can effectively reduce the forward conduction voltage drop of the device due to the metal-semiconductor contact, but simultaneously causes the problems of larger reverse leakage current, low reverse withstand voltage and the like, a trench MOS structure is usually added in the structure at present, a depletion layer generated by an MOS capacitor is utilized to pinch off a schottky barrier region, and a reverse electric field of the schottky barrier region is introduced into the device so as to reduce the reverse leakage current and improve the reverse voltage resistance of the schottky. However, the trench structure occupies a conductive surface area, which causes the device to have a problem of larger forward conduction voltage drop; meanwhile, the reverse electric field of the Schottky barrier region is introduced into the device by the groove structure, so that the corner part at the bottom of the groove becomes an easy-breakdown region, and the reverse electric field is an important factor for limiting the voltage endurance capacity of the device; another important parameter of schottky rectifier devices is generally to adjust the forward voltage drop by adjusting the schottky barrier properties, which is expected to be smaller and better, but this approach is more difficult. Therefore, various effective methods are utilized to reduce the on-resistance and improve the voltage withstand capability of the trench gate schottky rectifier, which is the most urgent problem to be solved.
Disclosure of Invention
The invention aims at the problems and provides an improved heterojunction semiconductor rectifying device which reduces forward on-resistance and improves high voltage resistance.
The technical scheme adopted by the invention is as follows:
a wide bandgap semiconductor rectifying device having a low on-resistance and high withstand voltage capability, comprising: the high-electron-mobility semiconductor device comprises a first metal electrode, a heavily doped first conductive type conductive layer and a lightly doped first conductive type conductive layer which are sequentially arranged on the first metal electrode, a deep groove structure is arranged in the lightly doped first conductive type conductive layer, a second conductive type region is arranged at the bottom of the deep groove structure, the transverse size of the second conductive type region is larger than the width of the deep groove, the second conductive type region completely covers the corner of the groove bottom, a second metal electrode is arranged on the upper surface of the lightly doped first conductive type conductive layer, an electron conductive channel structure is arranged between and outside the deep groove structure, the deep groove structure and the electron conductive channel structure are parallel to each other and are equal in interval, the electron conductive channel structure comprises a high-electron-mobility layer on the inner wall of the shallow groove and an insulating medium filled in the groove, and the high-electron-mobility layer in the electron conductive channel structure is a two-dimensional electronic material containing graphene and not limited by graphene or an aluminum gallium nitride material.
Further, the first metal electrode forms ohmic contact with the heavily doped first conductive type conductive layer, and the second metal electrode forms Schottky contact with the lower aluminum gallium nitride layer and is conducted with the conductive metal interconnection of the deep groove structure.
Further, the high electron mobility layer outside the electron conducting channel structure forms a two-dimensional electron current channel.
Compared with the prior device, the invention has the following advantages:
(1) The on-resistance of the device decreases. The semiconductor device of the conventional channel MOS Schottky diode rectifier structure works in a forward conduction state and only relies on the metal-semiconductor contact interface between the grooves to transmit current, and the current flows to a path shown by an arrow 8a in fig. 2; the rectifying device in the invention provides a high electron migration forward conduction path by additionally arranging an electron conduction channel structure between two adjacent deep trench structures, wherein the electron conduction channel structure is formed by a high electron mobility layer 6b and a lightly doped first conduction type conduction layer 3, and the forward conduction path is that electrons pass through the first conduction type conduction layer from cathode metal, then pass through the additionally arranged electron conduction channel structure and finally flow into anode metal, and an arrow shown as 8b in fig. 2 is the high electron migration forward conduction path. Because the conducting channel structure has the characteristic of high electron mobility, more electron current flows when the device is conducted in the forward direction, so that the forward on-resistance is effectively reduced, and the power loss of the device is reduced.
Meanwhile, the combination of the electron conduction trench structure and the second conduction type region 4 can eliminate the influence of the electron conduction trench structure on the increase of the reverse leakage current.
(2) The device voltage endurance is improved. The semiconductor device of the conventional trench MOS schottky diode rectifier structure, which operates in a reverse bias state, the MOS structure formed by the deep trench structure and the lightly doped first conductivity type conductive layer forms depletion in the lightly doped first conductivity type conductive layer, so that the device has a voltage endurance capability, and the depletion region is shown as region 8 in fig. 3. The novel composite type trench diode rectifier structure is characterized in that the aluminum gallium nitride material is added on the outer wall of the deep trench structure, the lattice quality of the side wall of the deep trench is effectively improved, and the critical breakdown electric field of the material is higher than that of gallium nitride, so that the voltage-withstanding capability of the device is further improved.
(3) The process compatibility is high. A high electron mobility layer or aluminum gallium nitride material may be directly deposited in the trench without the need for an additional complex process.
Drawings
Fig. 1 is a structural diagram of a schottky rectifying device of a conventional trench gate structure;
fig. 2 is a schematic forward conduction diagram of a wide bandgap semiconductor rectifying device with low on-resistance and high voltage-withstand capability, in which fig. 8a is a current forward conduction path of a semiconductor device with a conventional channel MOS schottky diode rectifier structure, and fig. 8b is a high electron mobility forward conduction path added to the rectifying device in the present invention;
FIG. 3 is a diagram of a wide bandgap semiconductor rectifying device with low on-resistance and high withstand voltage capability, wherein FIG. 8 is a depletion region when the device is inverted;
FIG. 4 is a block diagram of a heterojunction semiconductor rectifying device with low on-resistance and high withstand voltage capabilities including a high electron mobility layer of an electron conducting channel structure as a two-dimensional material graphene, according to one embodiment;
FIG. 5 is a block diagram of a heterojunction semiconductor rectifying device with low on-resistance and high withstand voltage capabilities including a high electron mobility layer of an electron conducting channel structure being an AlGaN material, according to one embodiment;
FIG. 6 is a simulation result of the forward characteristic curves of a wide bandgap semiconductor rectifying device with low on-resistance and high voltage withstand capability and a conventional schottky rectifying device with a trench structure; it can be seen that the on-resistance of the device of the invention is reduced and the current transmission capability is enhanced.
FIG. 7 is a simulation result of the forward characteristic curves of a wide bandgap semiconductor rectifying device with low on-resistance and high withstand voltage capability and a conventional schottky rectifying device with a trench structure; it can be seen that the breakdown voltage of the device is improved, and the voltage-withstanding capability is enhanced.
Detailed Description
A wide bandgap semiconductor rectifying device having a low on-resistance and high withstand voltage capability, comprising: the first metal electrode 1 is positioned on the first metal electrode 1, a heavily doped first conductive type conductive layer 2 and a lightly doped first conductive type conductive layer 3 are sequentially arranged in the lightly doped first conductive type conductive layer 3, a deep groove structure 5 is arranged on the upper surface of the lightly doped first conductive type conductive layer 3, a second metal electrode 7 is arranged on the upper surface of the lightly doped first conductive type conductive layer 3, an electron conductive channel structure 6 is arranged between the deep groove structures 5 and outside the deep groove structure 5, the deep groove structures 5 and the electron conductive channel structures 6 are parallel to each other and are equal in interval, and the electron conductive channel structure 6 is a shallow groove structure and comprises a high electron mobility layer 6b on the inner wall of the groove and an insulating medium 6a filled in the groove. In the present embodiment of the present invention, in the present embodiment,
the high electron mobility layer 6b in the electron conducting channel structure 6 is a graphene two-dimensional electron material layer, or the high electron mobility layer 6b in the electron conducting channel structure 6 is an aluminum gallium nitride material layer, and the mass percentage content of the aluminum component in the aluminum gallium nitride material is 10% -20%, and the thickness is 10-20 nm.
A medium layer 5b and a conductive material 5a filled in the medium layer 5b are arranged in the groove of the deep groove structure 5; the medium layer 5b is coated with an aluminum gallium nitride layer 5c, the thickness of the aluminum gallium nitride layer 5c is 1-10 um, and the mass percentage content of aluminum components in the aluminum gallium nitride material is l-5%. The depth of the electron conducting channel structure 6 is 1/10-2/5 of the depth of the deep groove structures 5, and the maximum width of the electron conducting channel structure 6 is 10-50% of the maximum width between two adjacent deep groove structures 5. A second conductivity type region 4 is provided under the deep trench structure 5 and the lateral dimension of said second conductivity type region 4 is larger than the trench bottom width of the deep trench structure 5, i.e. the second conductivity type region 4 completely covers the trench bottom corners.
The first conductive type conductive layer material is gallium nitride, the first conductive type is N type, the second conductive type is P type, the first metal electrode 1 is a metal cathode, the second metal electrode 7 is a metal anode, wherein the first metal electrode 1 and the second metal electrode 7 are one or more of titanium, titanium nitride, aluminum, copper, silver and the like. The present invention will be described in detail below with reference to the drawings.
Example 1:
referring to fig. 5, there is shown a structural diagram of a heterojunction semiconductor rectifying device comprising an electron conducting channel structure with a low on-resistance and high withstand voltage capability of aluminum gallium nitride material at the periphery, the device of this example comprising: the first metal electrode 1 is provided with a heavily doped first conductive type conductive layer 2 and a lightly doped first conductive type conductive layer 3 in sequence on the first metal electrode 1, a deep groove structure 5 is arranged in the lightly doped first conductive type conductive layer 3, a second conductive type region 4 is arranged at the bottom of the deep groove structure 5, the transverse size of the second conductive type region 4 is larger than the width of the deep groove, the second conductive type region 4 completely covers the corner of the groove bottom, a second metal electrode 7 is arranged on the upper surface of the lightly doped first conductive type conductive layer 3, an electron conductive channel structure 6 is arranged between and outside the deep groove structures, the deep groove structure 5 and the electron conductive channel structure 6 are parallel to each other and are equal in interval, and the electron conductive channel structure 6 is a shallow groove structure and comprises a high electron mobility layer 6b on the inner wall of the groove and an insulating medium 6a filled in the groove.
In this embodiment, under the combined action of the MOS capacitor formed by the deep trench structure 5 and the lightly doped first conductivity type conductive layer 3 and the PN junction formed by the second conductivity type layer 4 and the lightly doped first conductivity type conductive layer 3, the depletion barrier layer blocks the current flow. In addition, the aluminum gallium nitride layer 5c on the outer wall of the deep groove structure 5 can improve the critical withstand voltage value of the device;
in this embodiment, when the device is operated in the forward conduction state, the electron conduction channel structure is added, so that the forward conduction path is increased. The forward conduction path is that electrons flow from the cathode metal through the first conductive type conductive layer, then through the additionally arranged electron conductive channel structure and finally flow into the anode metal. Because the conducting channel structure has the characteristic of high electron mobility, more electron current flows when the device is conducted in the forward direction, so that the forward on-resistance is effectively reduced, and the power loss of the device is reduced.
Example 2:
referring to fig. 6, in comparison with embodiment 1, the material of the peripheral high electron mobility layer 6b of the electron conduction channel structure 6 is changed from a two-dimensional electron material to aluminum gallium nitride.
In this embodiment, when the rectifying device works in the forward conduction state, the forward conduction path is increased due to the additional electronic conduction channel structure. The forward conduction path is that electrons flow from the cathode metal through the first conductive type conductive layer, then through the additionally arranged electron conductive channel structure and finally flow into the anode metal. Because the aluminum gallium nitride outside the electron conducting channel structure and the lightly doped first conducting layer generate piezoelectric polarization reaction, a two-dimensional electron gas conducting channel is generated. The two-dimensional electron gas has high electron density and high electron mobility, so that the resistance of the device is greatly reduced when the device is in forward conduction, and the static power consumption of the device is effectively reduced; meanwhile, the aluminum gallium nitride layer at the outermost side of the deep groove structure has higher critical breakdown voltage, so that the aluminum gallium nitride layer can have higher reverse withstand voltage value.
The invention is prepared by the following method:
the first step: a deposition process is adopted, a heavily doped first conductive type conductive layer 2 and a lightly doped first conductive type conductive layer 3 are sequentially grown on the surface of a silicon substrate;
and a second step of: etching deep grooves and shallow grooves in the lightly doped first conductive type conductive layer 3 by adopting a photoetching process to form deep grooves and shallow grooves;
and a third step of: adopting doping and deposition processes, injecting boron ions into the bottom of the deep trench in the lightly doped first conductive type conductive layer 3 to form P-type gallium nitride doping, and then sequentially depositing an aluminum gallium nitride layer and a dielectric layer on the side wall of the deep trench; finally, depositing to form metal filling; a high electron mobility layer is also deposited on the shallow trench sidewalls, followed by a fill dielectric.
Fourth step: and depositing an aluminum gallium nitride layer on the surface of the device by adopting a deposition and etching process, and etching away the aluminum gallium nitride above the deep groove structure and the electron channel region.
Fourth step: and depositing a metal layer on the surface of the device by adopting a deposition and etching process, and etching an electrode contact area to lead out an electrode to form a second cathode metal.
Fifth step: etching and depositing processes are adopted to etch the silicon substrate, a metal layer is deposited on the lower surface of the device, an electrode contact area leading-out electrode is etched, a first cathode metal is formed, and finally passivation treatment is carried out.
Claims (5)
1. A wide bandgap semiconductor rectifying device having a low on-resistance and high withstand voltage capability, comprising: the first metal electrode (1), lie in the first metal electrode (1) and have heavily doped first conductive type conductive layer (2) and lightly doped first conductive type conductive layer (3) sequentially, there are deep trench structures (5) in the said lightly doped first conductive type conductive layer (3), there are second metal electrodes (7) on the said lightly doped first conductive type conductive layer (3) upper surface, characterized by, there are electron conductive channel structures (6) between deep trench structures (5) and outside, said deep trench structures (5) and electron conductive channel structures (6) are parallel and interval equal each other, the said electron conductive channel structures (6) are shallow trench structures and include high electron mobility layer (6 b) and insulating medium (6 a) filled in the said ditch groove on the ditch groove inner wall; the high electron mobility layer (6 b) in the electron conduction channel structure (6) is an aluminum gallium nitride material layer, the mass percentage content of aluminum components in the aluminum gallium nitride material is 10% -20%, the thickness of the aluminum gallium nitride material is 10-20 nm, a second conduction type region (4) is arranged below the deep groove structure (5), and the transverse size of the second conduction type region (4) is larger than the groove bottom width of the deep groove structure (5), namely the second conduction type region (4) completely covers the corner of the groove bottom.
2. The wide bandgap semiconductor rectifying device with low on-resistance and high withstand voltage capability according to claim 1, characterized in that a dielectric layer (5 b) and a conductive material (5 a) filled in said dielectric layer (5 b) are provided in the trench of said deep trench structure (5).
3. The wide bandgap semiconductor rectifying device with low on-resistance and high voltage withstand capability according to claim 2, wherein an aluminum gallium nitride layer (5 c) is coated outside the dielectric layer (5 b), the thickness of the aluminum gallium nitride layer (5 c) is 1-10 um, and the mass percentage content of aluminum components in the aluminum gallium nitride material is 1% -5%.
4. A wide bandgap semiconductor rectifying device with low on-resistance and high withstand voltage capability according to claim 3, characterized in that said electron conducting channel structure (6) has a depth of 1/10-2/5 of the depth of said deep trench structures (5), and the maximum width of said electron conducting channel structure (6) is 10% -50% of the maximum width between two adjacent deep trench structures (5).
5. The wide bandgap semiconductor rectifying device with low on-resistance and high withstand voltage capability according to claim 1, wherein the first conductive type conductive layer material is gallium nitride, the first conductive type is N-type, the second conductive type is P-type, the first metal electrode (1) is a metal cathode, and the second metal electrode (7) is a metal anode, wherein said first metal electrode (1) and said second metal electrode (7) are one or more of titanium, titanium nitride, aluminum, copper and silver.
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| CN201910937475.6A CN110729346B (en) | 2019-09-30 | 2019-09-30 | Wide-forbidden-band semiconductor rectifying device with low on-resistance and high voltage withstand capability |
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