CN110932573B - Power-taking rectifying and protecting circuit - Google Patents
Power-taking rectifying and protecting circuit Download PDFInfo
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- CN110932573B CN110932573B CN201911311241.7A CN201911311241A CN110932573B CN 110932573 B CN110932573 B CN 110932573B CN 201911311241 A CN201911311241 A CN 201911311241A CN 110932573 B CN110932573 B CN 110932573B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
- H02M7/062—Avoiding or suppressing excessive transient voltages or currents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
- H02M7/066—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode particular circuits having a special characteristic
Abstract
The invention relates to a power-taking rectifying and protecting circuit which can solve the technical problems of large loss of a rectifying bridge and low efficiency of the conventional rectifying and protecting circuit. The invention is based on an equipment mutual inductor, which comprises a circuit, a voltage comparator U1 and a control circuit, wherein the circuit comprises bidirectional transient suppression protection diodes VD1 and VD2, a Schottky diode rectifying circuit, a high-efficiency rectifying auxiliary circuit, an electrolytic capacitor C1 and the voltage comparator U1; the bidirectional transient suppression protection diodes VD1 and VD2 are respectively connected with the two ends AC _ L and AC _ N of the mutual inductor, and the other end of the bidirectional transient suppression protection diodes is grounded; compared with the traditional distribution network equipment, the high-efficiency power taking rectifying and protecting circuit can greatly increase the power taking efficiency, greatly simplify the result, obviously reduce the volume, have extremely high protection speed input and have smaller heat productivity.
Description
Technical Field
The invention relates to the technical field of distribution network automation, in particular to a power-taking rectifying and protecting circuit.
Background
In the distribution automation technology, distribution network equipment often involves accurate line current measurement and high-speed recording, so that a fault section can be quickly positioned, the response and processing time of line faults is shortened, and the power supply reliability is improved.
In order to meet the technical requirements of service life of many years, the equipment inevitably needs to use an external power supply to reduce the consumption of a backup power supply, the most extensive application is to use a mutual inductor to take power from a power line to meet the operation requirement, but the power line is provided with alternating current, so that the rectification circuit and the method can be applied to the equipment.
Meanwhile, in order to further improve the service life of the backup power supply, it is required that sufficient energy can be obtained from the line by the equipment when the electricity taking capability of the low current or the mutual inductor is weak, and the efficiency of the electricity taking and rectifying part needs to be improved. Thirdly, because the current sudden change and the load fluctuation exist on the power line, the energy taken by the mutual inductor is negligible, and corresponding protection measures are required to be taken to ensure the safety of the equipment.
The traditional method for taking electricity, rectifying and protecting is full-bridge rectifying, and the protection uses a switch to control a load, for example, a power resistor is switched into a system to discharge redundant energy, so that the method has the defects of large loss of a rectifier bridge, low efficiency and low energy utilization rate; the protection system has the problems of slow response time, large heating, large volume and the like.
Disclosure of Invention
The invention provides a power-taking rectifying and protecting circuit which can solve the technical problems of large loss of a rectifying bridge and low efficiency of the conventional rectifying and protecting circuit.
In order to achieve the purpose, the invention adopts the following technical scheme:
an electricity-taking rectification and protection circuit is based on an equipment mutual inductor and comprises bidirectional transient suppression protection diodes VD1 and VD2, a Schottky diode rectification circuit, a rectification auxiliary circuit, an electrolytic capacitor C1, a voltage comparator U1 and a control circuit;
the bidirectional transient suppression protection diodes VD1 and VD2 are respectively connected with the two ends AC _ L and AC _ N of the mutual inductor, and the other end of the bidirectional transient suppression protection diodes is grounded;
the Schottky diode rectifying circuit comprises a Schottky rectifying diode D1, a Schottky rectifying diode D2, a Schottky rectifying diode D3 and a Schottky rectifying diode D4; the anode of the Schottky rectifying diode D2 is interconnected with the AC _ L end of the transformer; the anode of the Schottky rectifying diode D3 is interconnected with the AC _ N end of the transformer; the cathode of the Schottky rectifier diode D2 is connected with the cathode of the Schottky rectifier diode D3 and is connected to the anode of the electrolytic capacitor C1; the cathode of the Schottky rectifier diode D1 is interconnected with the AC _ L end of the transformer; the Schottky rectifying diode D4 is connected with the anode of the Schottky rectifying diode D3; schottky rectifying diode D1 is interconnected with schottky rectifying diode D4 and is connected to ground reference;
the rectification auxiliary circuit comprises an N-type metal oxide semiconductor Q1A, an N-type metal oxide semiconductor Q1B, a Schottky diode D5, a Schottky diode D6, a thin-film resistor R1 and a thin-film resistor R2;
the drain of the N-type metal oxide semiconductor Q1A is connected with the cathode of the Schottky rectifier diode D1, the source of the N-type metal oxide semiconductor Q1A is connected with the reference ground, the gate of the N-type metal oxide semiconductor Q1A is connected with one end of the thin-film resistor R1, and the other end of the thin-film resistor R1 is connected with the reference ground; the drain electrode of the N-type metal oxide semiconductor Q1B is connected with the cathode electrode of the Schottky rectifier diode D4, the source electrode of the N-type metal oxide semiconductor Q1B is connected with the reference ground, the grid electrode of the N-type metal oxide semiconductor Q1B is connected with one end of a thin-film resistor R2, and the other end of the thin-film resistor R2 is connected with the reference ground; the anode of the schottky diode D5 is connected to the cathode of the schottky rectifying diode D4, and the cathode of the schottky diode D5 is connected to the gate of the nmos Q1A; the anode of the schottky diode D6 is connected to the cathode of the schottky rectifying diode D1, and the cathode of the schottky diode D6 is connected to the gate of the nmos Q1B;
the voltage comparator U1 and the control circuit thereof comprise a voltage comparator U1, a Schottky diode D7, a Schottky diode D8 and a thin-film resistor R3; the output VOUT of the voltage comparator U1 is connected with the anode of a Schottky diode D7, the anode of a Schottky diode D8 is connected with the same time, the input VIN of the voltage comparator U1 is connected with the anode of the electrolytic capacitor C1, and the ground of the voltage comparator U1 is connected with the reference ground; one end of the film resistor R3 is connected with the output VOUT of the voltage comparator U1, and the other end of the film resistor R3 is connected with the reference ground; the cathode of the Schottky diode D7 is connected with the cathode of the Schottky diode D5; the cathode of the schottky diode D8 is connected to the cathode of the schottky diode D6.
Compared with the prior art, the power-taking rectifying and protecting circuit has the following beneficial effects:
1. at present, all traditional rectification modes are full-wave rectification, alternating current is output by a mutual inductor, a Schottky rectifier diode D2 is conducted with a Schottky rectifier diode D4 when a voltage positive half shaft is used, a Schottky rectifier diode D3 is conducted with a Schottky rectifier diode D1 when a voltage negative half shaft is used, no matter the positive half shaft or the negative half shaft is used, two Schottky rectifier diodes are conducted, the rectified actual output voltage VCCIN is obtained by subtracting the voltage drop of the two corresponding Schottky rectifier diodes from the output of the mutual inductor, and therefore rectification efficiency is low. When the invention adopts the voltage positive and negative half shafts, one Schottky rectifier diode is conducted, the auxiliary control circuit for rectification can be automatically controlled, the corresponding N-type metal oxide semiconductor (NMOS tube) Q1A or Q1B is conducted, the voltage drop of the other rectifier diode required by rectification is reduced to the conduction voltage drop of the corresponding N-type metal oxide semiconductor (NMOS tube), which is basically 0, and thus, the rectification efficiency is improved. For example, when the voltage is positive in the half axis, the schottky rectifying diode D2 is turned on, and the positive voltage of the schottky rectifying diode D2 makes the N-type metal oxide semiconductor (NMOS transistor) Q1B turned on through the schottky diode D6, so that the schottky rectifying diode D4 is basically close to the short-circuit state; when the voltage is negative in the half axis, the schottky rectifying diode D3 is conducted, and simultaneously the positive voltage of the schottky rectifying diode D3 makes the N-type metal oxide semiconductor (NMOS transistor) Q1A conducted through the schottky diode D5, and the conduction voltage drop is basically ignored even if the schottky rectifying diode D1 is basically close to the short-circuit state. The thin-film resistors R1 and R2 are used to clamp the gate (G-pole) voltages of the NMOS transistors Q1A and Q1B to the ground reference when the auxiliary rectifying circuit is not activated, thereby enhancing the anti-interference capability and preventing malfunction.
2. At present, the traditional protection mode adopts a MOS tube cascade control power resistor access system to release redundant energy, and has the disadvantages of large volume, large heat generation and slow response. To solve these problems, the present invention is realized by the following method: the voltage comparator U1 monitors the input voltage VCCIN after the rectifier bridge in real time when the input VIN (pin 3) of the voltage comparator U1, once the voltage exceeds the protection fixed value of the voltage comparator U1, the output VOUT (pin 1) of the voltage comparator U1 will output high level, the Schottky diodes D7 and D8 control the N-type metal oxide semiconductor (NMOS tube) Q1A and Q1B to be conducted simultaneously, which is equivalent to simultaneously short-connecting the transformer outputs AC _ L and AC _ N to the reference ground, limited by the transformer output power, the transformer output voltage can be clamped to be below the protection threshold value set before, and the N-type metal oxide semiconductor (NMOS tube) Q1A and Q1B have extremely small conduction resistance and very small heat value. When the voltage does not exceed the protection fixed value of the voltage comparator U1, the output VOUT (pin 1) of the voltage comparator U1 will output low level, and meanwhile, the output VOUT is connected to the ground reference through the film resistor R3, so that the anti-interference capability is improved. The method combines the rectifier bridge auxiliary circuit and the leakage energy protection circuit, effectively reduces the circuit volume, is controlled by only one-stage N-type metal oxide semiconductor (NMOS) tube, and has extremely fast response
3. In order to prevent the failure of the protection device, the transient diode (TVS tube) is connected between the output AC _ L and the output AC _ N of the transformer, and the transient diodes VD1 and VD2 are respectively connected to the reference ground at the two ends of the output AC _ L and the output AC _ N of the transformer when the transformer is input, so that the load of each transient diode (TVS tube) can be effectively reduced, and the transient diodes are respectively conducted when the output AC _ L and the output AC _ N are respectively in overvoltage, and the heat generation and the service life loss of the device are effectively reduced.
In conclusion, compared with the traditional distribution network equipment, the power-taking rectifying and protecting circuit and the method can greatly increase the power-taking efficiency, greatly simplify the result, obviously reduce the volume, have extremely high protection speed and lower heat productivity.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
As shown in fig. 1, the power-taking rectification and protection circuit described in this embodiment is connected based on an equipment transformer, and includes bidirectional transient suppression protection diodes VD1, VD 2; a Schottky diode rectifier circuit; a rectification auxiliary circuit; an electrolytic capacitor C1; the voltage comparator U1 and a control circuit thereof.
The bidirectional transient suppression protection diodes VD1 and VD2 are respectively connected with two ends AC _ L and AC _ N of the mutual inductor, and the other end is connected to the reference ground.
The Schottky diode rectifying circuit comprises a Schottky rectifying diode D1, a Schottky rectifying diode D2, a Schottky rectifying diode D3 and a Schottky rectifying diode D4. The anode of the Schottky rectifying diode D2 is interconnected with the AC _ L end of the transformer; the anode of the Schottky rectifying diode D3 is interconnected with the AC _ N end of the transformer; the cathode of the Schottky rectifier diode D2 is connected with the cathode of the Schottky rectifier diode D3 and is connected to the anode of the electrolytic capacitor C1; the cathode of the Schottky rectifier diode D1 is interconnected with the AC _ L end of the transformer; the Schottky rectifying diode D4 is connected with the anode of the Schottky rectifying diode D3; schottky rectifying diode D1 is interconnected with schottky rectifying diode D4 and is connected to ground.
The rectification auxiliary circuit is composed of an N-type metal oxide semiconductor (NMOS tube) Q1A, an N-type metal oxide semiconductor (NMOS tube) Q1B, a Schottky diode D5, a Schottky diode D6, a thin-film resistor R1 and a thin-film resistor R2. The drain (D pole) of the NMOS transistor Q1A is connected to the cathode of the schottky rectifying diode D1, the source (S pole) of the NMOS transistor Q1A is connected to the ground, the gate (G pole) of the NMOS transistor Q1A is connected to one end of the thin-film resistor R1, and the other end of the thin-film resistor R1 is connected to the ground. The drain (D pole) of the NMOS transistor Q1B is connected to the cathode of the schottky rectifying diode D4, the source (S pole) of the NMOS transistor Q1B is connected to the ground, the gate (G pole) of the NMOS transistor Q1B is connected to one end of the thin-film resistor R2, and the other end of the thin-film resistor R2 is connected to the ground.
The anode of the schottky diode D5 is connected to the cathode of the schottky rectifying diode D4, and the cathode of the schottky diode D5 is connected to the gate (G pole) of the N-type metal oxide semiconductor (NMOS transistor) Q1A; the anode of the schottky diode D6 is connected to the cathode of the schottky rectifying diode D1, and the cathode of the schottky diode D6 is connected to the gate (G-pole) of the N-type metal oxide semiconductor (NMOS transistor) Q1B. When the output voltage of the mutual inductor is not influenced by the positive half shaft and the negative half shaft, one Schottky rectifier diode is conducted, the auxiliary rectification control circuit can be automatically controlled, the corresponding N-type metal oxide semiconductor (NMOS tube) Q1A or Q1B is conducted, the voltage drop of the other rectifier diode required by rectification is reduced to be the conduction voltage drop of the corresponding N-type metal oxide semiconductor (NMOS tube), and the voltage drop is basically 0, so that the rectification efficiency is improved. For example, when the voltage is positive in the half axis, the schottky rectifying diode D2 is turned on, and the positive voltage of the schottky rectifying diode D2 makes the N-type metal oxide semiconductor (NMOS transistor) Q1B turned on through the schottky diode D6, so that the schottky rectifying diode D4 is basically close to the short-circuit state; when the voltage is negative in the half axis, the schottky rectifying diode D3 is conducted, and simultaneously the positive voltage of the schottky rectifying diode D3 makes the N-type metal oxide semiconductor (NMOS transistor) Q1A conducted through the schottky diode D5, and the conduction voltage drop is basically ignored even if the schottky rectifying diode D1 is basically close to the short-circuit state. The thin-film resistors R1 and R2 are used to clamp the gate (G-pole) voltages of the NMOS transistors Q1A and Q1B to the ground reference when the auxiliary rectifying circuit is not activated, thereby enhancing the anti-interference capability and preventing malfunction.
The voltage comparator U1 and the control circuit thereof are composed of a voltage comparator U1, a Schottky diode D7, a Schottky diode D8 and a thin-film resistor R3. The output VOUT (pin 1) of the voltage comparator U1 is connected with the anode of the Schottky diode D7, the anode of the Schottky diode D8 is connected with the same time, the input VIN (pin 3) of the voltage comparator U1 is connected with the anode of the electrolytic capacitor C1, and the ground (pin 2) of the voltage comparator U1 is connected with the reference ground. The thin film resistor R3 has one end connected to the output VOUT (pin 1) of the voltage comparator U1 and the other end connected to a reference ground. The cathode of the Schottky diode D7 is connected with the cathode of the Schottky diode D5; the cathode of the schottky diode D8 is connected to the cathode of the schottky diode D6.
In the embodiment of the invention, VIN (pin 3) is input through a voltage comparator U1 to monitor the input voltage VCCIN after the rectifier bridge in real time, once the voltage exceeds the protection fixed value of the voltage comparator U1, VOUT (pin 1) output by the voltage comparator U1 outputs high level, N-type metal oxide semiconductor (NMOS tube) Q1A and Q1B are controlled to be simultaneously conducted through Schottky diodes D7 and D8, which is equivalent to simultaneously short-connecting the transformer outputs AC _ L and AC _ N to a reference ground, and limited by the output power of the transformer, the output voltage of the transformer can be quickly clamped below the protection threshold value set before, and the conduction resistance of the N-type metal oxide semiconductor (NMOS tube) Q1A and Q1B is extremely small, and the heat productivity is also very small. When the voltage does not exceed the protection fixed value of the voltage comparator U1, the output VOUT (pin 1) of the voltage comparator U1 will output low level, and meanwhile, the output VOUT is connected to the ground reference through the film resistor R3, so that the anti-interference capability is improved. The method combines the rectifier bridge auxiliary circuit and the leakage energy protection circuit, effectively reduces the circuit volume, is controlled by only one level of N-type metal oxide semiconductor (NMOS) tube, and has extremely fast response.
Meanwhile, in the embodiment of the invention, when the mutual inductor is input, a transient diode VD1 and a transient diode VD2 are respectively connected to the reference ground at the two ends of the AC _ L and the AC _ N, and when the mutual inductor is in a fault and inputs high voltage, the transient diodes VD1 and VD2 can be sequentially conducted, so that the load of each transient diode (TVS tube) can be effectively reduced, and the heat generation and the service life loss of devices can be effectively reduced.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (1)
1. The utility model provides an get electric rectification and protection circuit, is based on equipment mutual-inductor, its characterized in that:
the circuit comprises bidirectional transient suppression protection diodes VD1 and VD2, a Schottky diode rectifying circuit, a rectifying auxiliary circuit, an electrolytic capacitor C1, a voltage comparator U1 and a control circuit;
the bidirectional transient suppression protection diodes VD1 and VD2 are respectively connected with the two ends AC _ L and AC _ N of the mutual inductor, and the other end of the bidirectional transient suppression protection diodes is grounded;
the Schottky diode rectifying circuit comprises a Schottky rectifying diode D1, a Schottky rectifying diode D2, a Schottky rectifying diode D3 and a Schottky rectifying diode D4; the anode of the Schottky rectifying diode D2 is interconnected with the AC _ L end of the transformer; the anode of the Schottky rectifying diode D3 is interconnected with the AC _ N end of the transformer; the cathode of the Schottky rectifier diode D2 is connected with the cathode of the Schottky rectifier diode D3 and is connected to the anode of the electrolytic capacitor C1; the cathode of the Schottky rectifier diode D1 is interconnected with the AC _ L end of the transformer; the Schottky rectifying diode D4 is connected with the anode of the Schottky rectifying diode D3; schottky rectifying diode D1 is interconnected with schottky rectifying diode D4 and is connected to ground reference;
the rectification auxiliary circuit comprises an N-type metal oxide semiconductor Q1A, an N-type metal oxide semiconductor Q1B, a Schottky diode D5, a Schottky diode D6, a thin-film resistor R1 and a thin-film resistor R2;
the drain of the N-type metal oxide semiconductor Q1A is connected with the cathode of the Schottky rectifier diode D1, the source of the N-type metal oxide semiconductor Q1A is connected with the reference ground, the gate of the N-type metal oxide semiconductor Q1A is connected with one end of the thin-film resistor R1, and the other end of the thin-film resistor R1 is connected with the reference ground; the drain electrode of the N-type metal oxide semiconductor Q1B is connected with the cathode electrode of the Schottky rectifier diode D4, the source electrode of the N-type metal oxide semiconductor Q1B is connected with the reference ground, the grid electrode of the N-type metal oxide semiconductor Q1B is connected with one end of a thin-film resistor R2, and the other end of the thin-film resistor R2 is connected with the reference ground; the anode of the schottky diode D5 is connected to the cathode of the schottky rectifying diode D4, and the cathode of the schottky diode D5 is connected to the gate of the nmos Q1A; the anode of the schottky diode D6 is connected to the cathode of the schottky rectifying diode D1, and the cathode of the schottky diode D6 is connected to the gate of the nmos Q1B;
the voltage comparator U1 and the control circuit thereof comprise a voltage comparator U1, a Schottky diode D7, a Schottky diode D8 and a thin-film resistor R3; the output VOUT of the voltage comparator U1 is connected with the anode of a Schottky diode D7, the anode of a Schottky diode D8 is connected with the same time, the input VIN of the voltage comparator U1 is connected with the anode of the electrolytic capacitor C1, and the ground of the voltage comparator U1 is connected with the reference ground; one end of the film resistor R3 is connected with the output VOUT of the voltage comparator U1, and the other end of the film resistor R3 is connected with the reference ground; the cathode of the Schottky diode D7 is connected with the cathode of the Schottky diode D5; the cathode of the schottky diode D8 is connected to the cathode of the schottky diode D6.
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| CN201911311241.7A CN110932573B (en) | 2019-12-18 | 2019-12-18 | Power-taking rectifying and protecting circuit |
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| CN201911311241.7A CN110932573B (en) | 2019-12-18 | 2019-12-18 | Power-taking rectifying and protecting circuit |
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| CN110932573B true CN110932573B (en) | 2020-12-08 |
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| CN102647031B (en) * | 2012-04-06 | 2015-04-29 | 中国电力科学研究院 | Direct-current power supply powered by current transformer |
| JP6003429B2 (en) * | 2012-09-12 | 2016-10-05 | 富士通株式会社 | measuring device |
| CN103346686B (en) * | 2013-05-29 | 2015-08-05 | 浙江大学 | A kind of DC source based on the power taking of current transformer resonance |
| CN103840567A (en) * | 2014-03-19 | 2014-06-04 | 浙江图维电力科技有限公司 | Device and method for obtaining electric energy through current transformer made of composite magnetic core materials |
| CN104092391B (en) * | 2014-07-24 | 2017-01-25 | 国家电网公司 | Zero-loss rectifying circuit for induction electricity obtaining power supply |
| JP6467905B2 (en) * | 2014-12-18 | 2019-02-13 | 富士電機株式会社 | Grid interconnection power converter |
| CN207166158U (en) * | 2017-08-21 | 2018-03-30 | 安徽科盟电子科技有限公司 | A kind of efficient electricity getting device for ultra-high-tension power transmission line |
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