CN116317056B - Low-voltage ride-through circuit and low-voltage ride-through method - Google Patents
Low-voltage ride-through circuit and low-voltage ride-through method Download PDFInfo
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- CN116317056B CN116317056B CN202310525125.5A CN202310525125A CN116317056B CN 116317056 B CN116317056 B CN 116317056B CN 202310525125 A CN202310525125 A CN 202310525125A CN 116317056 B CN116317056 B CN 116317056B
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- 230000005611 electricity Effects 0.000 claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims description 6
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- 238000004519 manufacturing process Methods 0.000 abstract description 8
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/345—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering using capacitors as storage or buffering devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
- H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
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Abstract
The invention discloses a low-voltage ride through circuit and a low-voltage ride through method, whichThe circuit provided by the invention comprises: the voltage sampling circuit, the operational amplifier comparator, the silicon controlled rectifier driving circuit, the silicon controlled rectifier circuit and the electrolytic capacitor; the voltage sampling circuit is used for collecting bus voltage; operational amplifier comparator for bus voltageAnd reference voltageOutputting an enable signal when an enable condition is satisfied; the silicon controlled rectifier driving circuit controls the silicon controlled rectifier circuit to be switched on or off according to the enabling signal; the electrolytic capacitor is connected in parallel with the bus, and the conduction of the silicon controlled rectifier circuit controls the electrolytic capacitor to discharge so as to provide auxiliary electricity for the bus. According to the invention, by collecting the bus voltage, when the bus voltage is smaller than the reference voltage, an enabling signal is sent to the silicon controlled rectifier driving circuit to control the silicon controlled rectifier driving circuit to be conducted, so that the electrolytic capacitor connected in parallel with the bus is discharged to provide auxiliary electricity for the bus voltage, the damage of voltage dip to production equipment is avoided, and the stability of the production equipment is improved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a low-voltage ride-through circuit and a low-voltage ride-through method.
Background
In recent years, with the continuous development of high-tech technology, the electric energy quality is increasingly closely related to industries such as industrial production, IT communication, medical treatment and the like, and life of people. Also for this reason, the effect caused by the voltage sag is increasing. Voltage sag has become a power quality problem that plagues power enterprises and power consumers. A large number of high-precision control instruments are arranged on the semiconductor industry production line, and the control instruments are extremely easy to be disturbed by voltage sag, so that products are scrapped. In this regard, the semiconductor industry association (SEMI) also established SEMI F47 standards that define the general immunity of the level of voltage dip that semiconductor processing equipment can withstand. In order to protect the equipment from voltage dip, SEMI F47-0706 specifies the time that the semiconductor processing equipment is tolerant to voltage dip.
At present, two modes are generally adopted to solve the problem of voltage dip, one is to improve the capability of semiconductor guidance equipment for resisting the voltage dip, and the mode only solves the problem that a certain equipment is harmful when the voltage dip occurs, so that other control instruments on a production line cannot be protected, and huge cost is required to be input in order to ensure the operation of the production line; another approach is to change the design of the circuit network, which is usually connected in series between the sensitive load (i.e. the semiconductor guidance device) and the power grid by using a DVR, so as to protect the semiconductor guidance device from voltage dip, but because the configuration capacity of the DVR is the same as the load capacity, when the load of the power grid is changed, a targeted setting is still required.
Therefore, a low voltage ride through circuit and a low voltage ride through method are needed to reduce the damage caused by voltage dip to semiconductor processing equipment, and to ensure that the semiconductor processing equipment meets the SEMI F47 standard, and to adapt to the situation of different numbers of semiconductor guidance equipment in a power grid system.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a low-voltage ride-through circuit and a low-voltage ride-through method, which are used for solving the problem that the semiconductor processing equipment is damaged by sudden voltage drop and the SEMI F47 standard is not met at the same time, so that auxiliary electricity is provided for production equipment during the sudden voltage drop, and the voltage step-type stable drop is ensured.
In a first aspect, the invention provides a low voltage ride through circuit, which comprises a voltage sampling circuit, an operational amplifier comparator, a silicon controlled drive circuit, a silicon controlled circuit and an electrolytic capacitor,
the voltage sampling circuit is used for collecting bus voltage;
the operational amplifier comparator is used for comparing the collected bus voltage with the reference voltageOutputting an enable signal when an enable condition is satisfied;
the controllable silicon drive circuit controls the controllable silicon circuit to be switched on or off according to the enabling signal;
the electrolytic capacitor is connected in parallel with the bus, and the conduction of the silicon controlled rectifier circuit controls the electrolytic capacitor to discharge so as to provide auxiliary electricity for the bus.
Optionally, the operational amplifier comparatorThe input end inputs the collected bus voltage, and the +.>The input terminal is the reference voltage +.>The +.>A resistor is also connected between the input end and the output endThe output end of the operational amplifier comparator is connected with the output end of the operational amplifier through a resistor +.>And external power supply->And (5) connection.
Optionally, the silicon controlled rectifier circuit comprises a silicon controlled rectifier module, and the silicon controlled rectifier module comprises two silicon controlled rectifiers connected in parallel in opposite polarities、/>。
Optionally, the first pin and the second pin of the silicon controlled module are grounded, and the fourth pin is connected with a resistor in seriesThe rear ground is also connected with a resistor +.>The third pin is connected to the inductor +.>Is one end of (1), inductance->The other end of the (B) is connected with BUS+,
electrolytic capacitorAnd heat dissipation resistor->The two ends of BUS+ and BUS-are connected in parallel after being connected in series, and the heat dissipation resistor is +.>Parallel to electrolytic capacitor->Is provided.
Optionally, the silicon controlled rectifier circuit further comprises a diodeAnd->，
DiodeParallel to the resistor->Is diode->The cathode of the (B) is connected with the second pin of the silicon controlled rectifier circuit and is grounded, and the diode is +>The anode of the (C) is connected with a third pin of the silicon controlled rectifier circuit;
diodeParallel to the resistor->Is diode->The cathode of the (C) is connected with the fourth pin of the silicon controlled rectifier circuit, and the diode +.>Is grounded.
Optionally, the thyristor driving circuit comprises an enabling driving circuit and a transformerA MOS tube VT1 and a MOS tube VT2,
an enable signal is input into the enable driving circuit via a transformerAfter isolation, inputting a MOS tube VT1 and a MOS tube VT2;
when the enabling signal is at a high level, the MOS tube VT1 and the MOS tube VT2 are conducted, and the silicon controlled drive circuit sends a high-level pulse signal to the silicon controlled circuit。
Optionally, the silicon controlled drive circuit further comprises a rectifying circuit and a diodeTriode Q1, capacitor->And resistance->、/>、/>、/>、/>；
The input end of the enabling driving circuit inputs an enabling signal, the output end of the enabling driving circuit outputs driving signals SCR_DRIVE1 and SCR_DRIVE2, and the driving signals SCR_DRIVE1 and SCR_DRIVE2 respectively pass through capacitorsAnd a resistorOutput to transformer->Third and fourth pins of (2), transformer->The output end of the (a) is connected with the rectifying circuit, and the rectifying circuit is also connected with the rectifying circuit through a resistor +.>And diode->Cathode, triode->Base and resistance of->Is connected with one end of the resistorIs->Is provided with a collector electrode of the MOS tube VT1, a source electrode of the MOS tube VT2The source is commonly connected to the transformer->Sixth and seventh pins;
diodeCathode, triode->The emitter of the MOS tube VT1 and the grid of the MOS tube VT2 are connected together, and the diode is +.>Is->The rectifier circuit is connected with the power supply circuit;
the drain electrode of the MOS tube VT1 and the drain electrode of the MOS tube VT2 are connected with the controllable silicon circuit;
resistor、/>One end of the resistor is connected with the drains of the MOS transistors VT1 and VT2 respectively>Resistance->Outputs a thyristor driving signal +.>、/>。
Optionally, the rectifying circuit includes a diodeAnd diode->Diode->And diode->Cathode-common-connection resistance +.>Diode->Anode of transformer->Eighth pin of (2), diode->Anode of transformer->Is provided.
In a second aspect, the present invention provides a low voltage ride through method, based on any one of the possible forms of the first aspect, comprising:
collecting bus voltage;
when the bus voltage meets the enabling condition, an enabling signal is sent to the controllable silicon driving circuit;
responding to the trigger of the enabling signal, the silicon controlled drive circuit outputs trigger current to the silicon controlled circuit to trigger the silicon controlled module to be conducted;
and in response to the conduction of the silicon controlled module, the electrolytic capacitor discharges to provide auxiliary electricity for the bus.
By adopting the technical scheme, the application has the following beneficial effects:
according to the invention, by collecting the bus voltage, when the bus voltage is smaller than the reference voltage, an enabling signal is sent to the controllable silicon driving circuit, and the controllable silicon driving circuit is controlled to be conducted, so that forward voltage is provided for the controllable silicon module, an electrolytic capacitor connected in parallel with the bus is discharged to provide auxiliary electricity for the bus voltage, the damage of voltage dip to production equipment is avoided, and the stability of the production equipment is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
Fig. 1 shows a schematic diagram of a low voltage ride through circuit according to an embodiment of the present invention;
fig. 2 shows a schematic diagram of a scr driving circuit according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a low voltage ride through method according to an embodiment of the present invention;
fig. 4 shows a schematic diagram of three-phase voltages, open-phase voltages and driving signals provided by an embodiment of the present invention.
Detailed Description
Embodiments of the technical scheme of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and thus are merely examples, which should not be construed as limiting the scope of the present invention.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention pertains.
As shown in fig. 1, the present embodiment provides a schematic diagram of a low voltage ride through circuit, which includes: the voltage sampling circuit, the operational amplifier comparator, the silicon controlled rectifier driving circuit, the silicon controlled rectifier circuit and the electrolytic capacitor; the voltage sampling circuit is used for collecting bus voltage; the operational amplifier comparator is used for comparing the collected bus voltage with the reference voltageInputting when the enabling condition is satisfiedAn enable signal; the silicon controlled rectifier driving circuit controls the silicon controlled rectifier circuit to be switched on or off according to the enabling signal; the electrolytic capacitor is connected in parallel with the bus, and the conduction of the silicon controlled rectifier circuit controls the electrolytic capacitor to discharge so as to provide auxiliary electricity for the bus.
The low voltage ride through circuit also comprises a signal modulation circuit, wherein the input end of the signal modulation circuit is connected with the voltage sampling circuit, the bus voltage acquired by the voltage sampling circuit is subjected to signal conditioning, and the conditioned voltage signal is output to the operational amplifier comparator.
As shown in fig. 1, the input terminal of the operational amplifier comparator CThe input end of the operational amplifier comparator C is connected with the output end of the signal modulation circuit>For the reference signal terminal, the obtained bus voltage is modulated and the reference voltage +.>Comparing, when the driving condition of the silicon controlled rectifier is met, the enabling level is sent to the silicon controlled rectifier driving circuit to conduct the silicon controlled rectifier of the silicon controlled rectifier module>、。
Optionally, the input of the op-amp comparator CAnd resistance->Is connected with one end of the resistor->The other end of the resistor is connected with the output end of the operational amplifier comparator C>Is connected with the output end of the operational amplifier comparator C, resistance +>Is connected with the other end of the external power supply>And (5) connection. Wherein, resistance->Resistance->Can be used for regulating the reference voltage of the operational amplifier comparator C. After signal conditioning and different reference voltages +.>And comparing to realize the voltage maintaining function under different voltage sag conditions.
Optionally, after the thyristor driving circuit obtains the enable signal output by the operational amplifier comparator C, the enable signal is isolated by the transformer T1 and rectified to output a thyristor driving signalAnd->The controllable silicon module is sent to the controllable silicon circuit and comprises two controllable silicon ++in parallel with opposite polarities>、/>。
In one possible embodiment, the first pin and the second pin of the thyristor module are grounded, and the fourth pin is connected in series with a resistorAnd the rear is grounded.A resistor is connected in parallel between the second pin and the third pin of the silicon controlled module>And diode->Diode->The cathode of the (B) is connected with the second pin of the silicon controlled module and is grounded, and the diode is +.>The anode of the (C) is connected with a third pin of the silicon controlled rectifier circuit.
DiodeAnd the inductance->Is connected with one end of the inductor->The other end of the capacitor is connected with BUS+ and BUS-ground, and the electrolytic capacitor is->And heat dissipation resistor->The two ends of BUS+ and BUS-are connected in parallel after being connected in series, and the heat dissipation resistor is +.>Parallel to electrolytic capacitor->Is provided. Resistance->、/>The function of the trigger circuit is to prevent the false triggering of the silicon controlled rectifier.
Wherein the diodeParallel to the resistor->Is provided; diode->The cathode is connected with a fourth pin of the silicon controlled rectifier circuit, and the anode is grounded; drain electrode of MOS tube VT1 passes through resistance +.>The drain electrode of the MOS tube VT2 is connected with the fourth pin of the silicon controlled rectifier circuit and passes through the resistor +.>And the second pin of the silicon controlled rectifier circuit is connected.
As shown in fig. 2, the scr driving circuit provided in this embodiment includes: enable drive circuit and transformerRectifying circuit, diode->Triode->MOS tube VT1 and VT2, capacitance +.>And resistance->、/>、/>、/>、。
Specifically, the input end of the enabling driving circuit inputs driving enabling level, and the driving signals SCR_DRIVE1 and SCR_DRIVE2 output by the output end are respectively connected with the capacitorAnd resistance->Capacitance->And resistance->Respectively and the other end of the transformerThe third pin and the fourth pin are connected. Transformer->The input end of the transformer is connected with the rectification circuit.
Specifically, the rectifying circuit includes a diode、/>Diode->、/>Cathode-common-connection resistance +.>Diode->Anode of transformer->Fifth pin of (3), diode->Anode of transformer->Is provided for the eighth pin of (c). The rectifying circuit is also connected with the resistor->And diode->Cathode, triode->Base and resistance of->Is connected with one end of the resistor->Is->The collector electrode of the MOS tube VT1 and the source electrode of the MOS tube VT2 are commonly connected to a transformer +.>And (2) the sixth and seventh two pins.
DiodeCathode, triode->The emitter of the MOS tube VT1 and the grid of the MOS tube VT2 are connected together, and the diode is +.>Is->The rectifier circuit is connected with the power supply circuit; the drain electrode of the MOS tube VT1 and the drain electrode of the MOS tube VT2 are connected with a silicon controlled rectifier circuit.
ResistorResistance->One end of the resistor is connected with the drains of the MOS transistors VT1 and VT2 respectively>Resistance->Outputs a driving signal +.>And->I.e. a drive signal for driving a thyristor circuit +.>、/>. In fig. 2, the push-pull circuit formed by the MOS transistors VT1 and VT2 can reduce loss, output more safely, and a triode +.>Playing a role of amplifying signals.
As shown in fig. 3, this embodiment further provides a low voltage ride through method, including:
collecting bus voltage;
when the bus voltage meets the enabling condition, an enabling signal is sent to the controllable silicon driving circuit;
responding to the trigger of the enabling signal, the silicon controlled drive circuit outputs trigger current to the silicon controlled circuit to trigger the silicon controlled to be conducted;
and in response to the conduction of the silicon controlled rectifier, the electrolytic capacitor discharges to provide auxiliary electricity for the bus.
Step (a)The enabling conditions of (a) are as follows: bus voltage->Less than the reference voltage of the operational amplifier comparator>. During the drop of the bus voltage Us, once the bus voltage +.>Reference voltage less than the op-amp comparator>The operational amplifier comparator C triggers the discharge of the electrolytic capacitor by an output enabling signal, and voltage step-type stable drop is ensured. Thus, reference voltage +.>To enable the semiconductor processing equipment to accord with SEMI F47 standard for targeted setting; by adjusting the reference signal->The voltage dip was allowed to stand for 1 second at 80%, for 0.5 second at 70% and for 0.2 second at 50%. Reference voltage->As the bus voltage Us decreases, it also changes.
As shown in FIG. 4, when the two ends of the BUS BUS supply power to the low voltage ride through circuit provided in this embodiment, that is, the voltage sampling circuit collects the BUS voltage, the output voltage of the low voltage ride through circuit steadily and rapidly rises toElectrolytic capacitor->In a charged state.
In particular in the view of figure 4,the curve is a schematic diagram of three-phase mains supply input by a bus;the curve is a schematic diagram of the input three-phase mains supply phase loss; />The curve is a schematic diagram of the bus voltage; />The curve is a schematic diagram of the bus voltage after the phase loss of the input mains supply; />The curve is a schematic diagram of the output pulse signal of the thyristor driving circuit.
When the input mains supply lacks phase, as shown in FIG. 4, the B-phase voltage signal is absent, without the regulation of a thyristor, asCurve, busbar voltage->Will be from->Rapidly dropping to a zero value, the voltage dip causes the semiconductor processing equipment to fail the SEMI F47 standard. It should be noted that, the mains supply phase loss is only one possible form of voltage dip provided in this embodiment, and in practical application, different voltage dip causes are also included, which will not be described in detail herein.
After the low voltage ride through circuit provided in the embodiment is at the zero crossing point of the open phase, the output pulse signal controls the silicon controlled rectifier to be turned off, and when the silicon controlled rectifier driving circuit receives the invalid level, the silicon controlled rectifier driving circuit is turned off to disconnect the gate pole loop of the silicon controlled rectifier circuit, so that the silicon controlled rectifier circuit is in a cut-off state; when the silicon controlled drive circuit receives the effective level, the silicon controlled drive circuit is conducted, and trigger current is provided for the gate electrode of the silicon controlled circuit, so that forward voltage is connected between the anode and the cathode of the silicon controlled to trigger the silicon controlled to be conducted.
As shown in figure 4 of the drawings,tthe zero crossing point of phase B at time 1, after a short delay time,t2 time silicon controlled drive circuit outputs pulse signal. When pulse signal +.>Is at high level, at this time the thyristor is turned on, bus voltage +.>The rising trend is presented; when outputting pulse signal +>At low level, the thyristor is turned off, bus voltage +.>Is in a descending trend; thus, the electrolytic capacitor is connected in parallel with the bus bar>The way of discharging, the voltage at both ends of the busbar +.>In the instant drop, the output voltage is slowly dropped in a zigzag shape.
At the position oftAt time 2, electrolytic capacitorStart discharging->In an upward trend untiltTime 3. Wherein, electrolytic capacitorThe capacitance of (2) should be satisfiedt2-tDischarge condition at 3 time, bus voltage +.>At the position oft2-tAnd maintaining the discharge state at the moment 3.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention, and are intended to be included within the scope of the appended claims and description.
Claims (7)
1. A low voltage ride through circuit is characterized by comprising a voltage sampling circuit, an operational amplifier comparator, a silicon controlled drive circuit, a silicon controlled circuit and an electrolytic capacitor,
the voltage sampling circuit is used for collecting bus voltage;
the operational amplifier comparator is used for comparing the collected bus voltage with the reference voltageOutputting an enable signal when an enable condition is satisfied;
the controllable silicon drive circuit controls the controllable silicon circuit to be switched on or off according to the enabling signal;
the silicon controlled drive circuit comprises an enabling drive circuit and a transformerA MOS tube VT1 and a MOS tube VT2,
an enable signal is input into the enable driving circuit via a transformerAfter isolation, inputting a MOS tube VT1 and a MOS tube VT2;
when the enabling signal is at a high level, the MOS tube VT1 and the MOS tube VT2 are conducted, and the silicon controlled drive circuit sends a high-level pulse signal to the silicon controlled circuit；
The silicon controlled drive circuit also comprises a rectifying circuit and a diodeTriode->Capacitance->And resistance->、/>、、/>、/>；
The input end of the enabling driving circuit inputs an enabling signal, the output end of the enabling driving circuit outputs driving signals SCR_DRIVE1 and SCR_DRIVE2, and the driving signals SCR_DRIVE1 and SCR_DRIVE2 respectively pass through capacitorsAnd resistance->Output to transformer->Third and fourth pins of (2), transformer->The output end of the (a) is connected with the rectifying circuit, and the rectifying circuit is also connected with the rectifying circuit through a resistor +.>And diode->Anode, triode->Base and resistance of->Is connected with one end of the resistor->Is->Is connected to the collector electrode of the MOS tube VT1 and the source electrode of the MOS tube VT2Transformer->Sixth and seventh pins of (a);
diodeCathode, triode->The emitter of the MOS tube VT1 and the grid of the MOS tube VT2 are connected together, and the diode is +.>Is->The rectifier circuit is connected with the power supply circuit;
the drain electrode of the MOS tube VT1 and the drain electrode of the MOS tube VT2 are connected with the controllable silicon circuit;
resistor、/>One end of the resistor is connected with the drains of the MOS transistors VT1 and VT2 respectively>Resistance->Outputs a thyristor driving signal +.>、/>；
The electrolytic capacitor is connected in parallel with the bus, and the conduction of the silicon controlled rectifier circuit controls the electrolytic capacitor to discharge so as to provide auxiliary electricity for the bus.
2. The circuit of claim 1, wherein the op-amp comparatorThe input end inputs the collected bus voltage, and the +.>The input terminal is the reference voltage +.>The +.>A resistor +.>The output end of the operational amplifier comparator is connected with the output end of the operational amplifier through a resistor +.>And external power supply->And (5) connection.
3. The circuit of claim 1, wherein the thyristor circuit comprises a thyristor module comprising two thyristors in parallel of opposite polarity、/>。
4. A circuit according to claim 3, characterized in thatIs characterized in that a first pin of the silicon controlled module is grounded, and a fourth pin is connected with a resistor in seriesThe rear ground is also connected with a resistor +.>The third pin is connected to the inductorIs one end of (1), inductance->The other end of the (B) is connected with BUS+,
electrolytic capacitorAnd heat dissipation resistor->The two ends of BUS+ and BUS-are connected in parallel after being connected in series, and the heat dissipation resistor is +.>Parallel to electrolytic capacitor->Is provided.
5. The circuit of claim 4, wherein the thyristor circuit further comprises a diodeAnd->，
DiodeParallel to the resistor->Is diode->The cathode of the (C) is connected with the second pin of the silicon controlled rectifier circuit and is connected with a silicon controlled rectifier driving signal +.>Diode->The anode of the (C) is connected with a third pin of the silicon controlled rectifier circuit;
diodeParallel to the resistor->Is diode->The cathode of the (C) is connected with the fourth pin of the silicon controlled rectifier circuit, and the diode +.>Is grounded.
6. The circuit of claim 1, wherein the rectifying circuit comprises a diodeAnd diode->Diode->And diode->Cathode-common-connection resistance +.>Diode->Anode of transformer->Eighth pin of (2), diode->Anode of transformer->Is provided.
7. A low voltage ride through method based on the circuit of any one of claims 1-6, comprising:
collecting bus voltage;
when the bus voltage meets the enabling condition, an enabling signal is sent to the controllable silicon driving circuit;
responding to the trigger of the enabling signal, the silicon controlled drive circuit outputs trigger current to the silicon controlled circuit to trigger the silicon controlled to be conducted;
and in response to the conduction of the silicon controlled rectifier, the electrolytic capacitor discharges to provide auxiliary electricity for the bus.
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| CN202310525125.5A CN116317056B (en) | 2023-05-11 | 2023-05-11 | Low-voltage ride-through circuit and low-voltage ride-through method |
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| CN202310525125.5A CN116317056B (en) | 2023-05-11 | 2023-05-11 | Low-voltage ride-through circuit and low-voltage ride-through method |
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| CN109818484A (en) * | 2019-02-15 | 2019-05-28 | 深圳市火音智控科技有限公司 | Bidirectional triode thyristor isolated power supply trigger circuit |
| CN212727498U (en) * | 2020-06-17 | 2021-03-16 | 厦门阳光恩耐照明有限公司 | Bus voltage compensation circuit and LED drive circuit |
| CN216216500U (en) * | 2021-09-14 | 2022-04-05 | 阳光电源股份有限公司 | Driving circuit of thyristor and hydrogen production power supply |
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2023
- 2023-05-11 CN CN202310525125.5A patent/CN116317056B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818484A (en) * | 2019-02-15 | 2019-05-28 | 深圳市火音智控科技有限公司 | Bidirectional triode thyristor isolated power supply trigger circuit |
| CN212727498U (en) * | 2020-06-17 | 2021-03-16 | 厦门阳光恩耐照明有限公司 | Bus voltage compensation circuit and LED drive circuit |
| CN216216500U (en) * | 2021-09-14 | 2022-04-05 | 阳光电源股份有限公司 | Driving circuit of thyristor and hydrogen production power supply |
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