CN110931641B - Silicon-based organic-inorganic hybrid solar cell and preparation method thereof - Google Patents
Silicon-based organic-inorganic hybrid solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN110931641B CN110931641B CN201911158110.XA CN201911158110A CN110931641B CN 110931641 B CN110931641 B CN 110931641B CN 201911158110 A CN201911158110 A CN 201911158110A CN 110931641 B CN110931641 B CN 110931641B
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- type monocrystalline
- spiro
- monocrystalline silicon
- ometad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 92
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 67
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims abstract description 24
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 32
- 238000004528 spin coating Methods 0.000 claims description 27
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 14
- 238000002207 thermal evaporation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000011987 methylation Effects 0.000 claims description 6
- 238000007069 methylation reaction Methods 0.000 claims description 6
- 239000002070 nanowire Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 6
- 229920001940 conductive polymer Polymers 0.000 description 4
- 238000005660 chlorination reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a silicon-based organic-inorganic hybrid solar cell and a preparation method thereof, comprising the following steps: preparing a silicon wire array on the upper surface of an N-type monocrystalline silicon substrate, and then passivating the N-type monocrystalline silicon substrate; preparing a first Spiro-OMeTAD layer, a second Spiro-OMeTAD layer and a first PEDOT PSS layer under a certain pressure, and then preparing a front electrode on the N-type monocrystalline silicon substrate; evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate; and preparing a back electrode on the back of the N-type monocrystalline silicon substrate.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a silicon-based organic-inorganic hybrid solar cell and a preparation method thereof.
Background
Compared with the traditional monocrystalline silicon battery or polycrystalline silicon battery, the Schottky solar battery based on the transparent conducting layer and the silicon has the advantages that the structure is simple, the preparation process is simple and easy, and the high-temperature process is not needed in the preparation process, so that the interests of researchers in universities and enterprises are aroused. In recent years, conductive polymers such as Spiro-OMeTAD, P3HT, PEDOT: PSS and the like are widely used in silicon-based organic-inorganic hybrid solar cells due to their high specific conductivity and high light transmittance. However, in the process of preparing the conductive polymer layer on the surface of the silicon wire, since the silicon wire has a very high specific surface area, the quality of the conductive polymer layer becomes a key factor affecting the photoelectric conversion efficiency thereof, and how to prepare the high-quality conductive polymer layer is a research hot spot of researchers.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a silicon-based organic-inorganic hybrid solar cell and a preparation method thereof.
In order to achieve the above purpose, the preparation method of the silicon-based organic-inorganic hybrid solar cell provided by the invention comprises the following steps:
1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 2-5 microns, the diameter of the silicon wire is 600-900 nanometers, and the distance between adjacent silicon nanowires is 1-2 microns;
2) Then, passivating the N-type monocrystalline silicon substrate;
3) Preparation of the first Spiro-OMeTAD layer: at a pressure of 1.0X10 5 Dripping the first Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 2 in a sealed cavity of Pa, standing for 1-2 min, and keeping the pressure in the sealed cavity from 1.0X10 during standing 5 Pa is gradually increased to 1.3X10 5 Pa, then at a pressure of 1.3X10 5 Spin-coating for 60-90 seconds under the Pa condition, and then performing a first annealing treatment to form a first Spiro-OMeTAD layer;
4) Preparation of the second Spiro-OMeTAD layer: at a pressure of 1.3X10 5 Dripping the second Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 3 in the Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.3X10 during standing 5 Pa is gradually increased to 1.6X10 5 Pa, then at a pressure of 1.6X10 5 Spin-coating for 60-90 seconds under the Pa condition, and then carrying out a second annealing treatment to form a second Spiro-OMeTAD layer;
5) Preparation of first PEDOT: PSS layer: at a pressure of 1.0X10 5 Dripping PEDOT: PSS solution on the N-type monocrystalline silicon substrate obtained in the step 4 in a Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.0X10 in the standing process 5 Pa is gradually increased to 1.5X10 5 Pa, then at a pressure of 1.5X10 5 Spin-coating for 60-90 seconds under Pa, and then carrying out annealing treatment for the third time to form a first PEDOT PSS layer;
6) Preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step 5;
7) Evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate obtained in the step 6;
8) And (3) preparing a back electrode on the back surface of the N-type monocrystalline silicon substrate obtained in the step (7).
Preferably, in the step 1, the silicon line array is prepared on the upper surface of the N-type monocrystalline silicon substrate by wet etching or dry etching.
Preferably, in the step 2), the specific step of passivating the N-type monocrystalline silicon substrate includes: soaking the N-type monocrystalline silicon substrate in HF for 3-10 minutes, then chloridizing the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate.
Preferably, in the step 3), the concentration of the Spiro-ome tad in the first Spiro-ome tad solution is 10-20mg/ml, the rotation speed of spin coating the first Spiro-ome tad solution is 2000-3000 rpm, and the specific steps of the first annealing treatment are as follows: at a pressure of 1.3X10 5 And heat-treating at 80-90deg.C for 10-15 min under Pa.
Preferably, in the step 4), the concentration of the Spiro-ome tad in the second Spiro-ome tad solution is 5-10mg/ml, the rotation speed of the second Spiro-ome tad solution is 3000-4000 rpm, and the specific steps of the second annealing treatment are as follows: at a pressure of 1.6X10 5 And heat-treating at 85-95deg.C for 15-20 min under Pa.
Preferably, in the step 5), the rotational speed of the PEDOT/PSS solution is 2500-3500 rpm, and the specific steps of the third annealing treatment are as follows: at a pressure of 1.5X10 5 And heat-treating for 20-30 min at 120-140 deg.C under Pa.
Preferably, in the step 6), the method for forming the front electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the material of the front electrode is copper or silver, the thickness of the front electrode is 90-150 nm, and the front electrode is a gate electrode.
Preferably, in the step 7), the thickness of the lithium fluoride layer is 1-2 nm, and in the step 8), the method of forming the back electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 100-200 nm.
The invention also provides a silicon-based organic-inorganic hybrid solar cell, which is prepared by adopting the method.
Compared with the prior art, the invention has the following advantages:
in the process of preparing the first Spiro-OMeTAD layer, the second Spiro-OMeTAD layer and the first PEDOT-PSS layer on the silicon wire array, the pressure of the closed cavity is increased in the standing process, so that the Spiro-OMeTAD solution and the PEDOT-PSS solution can enter gaps between adjacent silicon wires in the silicon wire array more easily, and meanwhile, the closed cavity is kept to have a certain pressure in the spin coating and annealing processes, so that the Spiro-OMeTAD and the PEDOT-PSS can be attached to the silicon wires more easily, and further, the compact first Spiro-OMeTAD layer, the second Spiro-OMeTAD layer and the first PEDOT-PSS layer can be formed, meanwhile, the concentration of each Spiro-OMeTAD solution and the annealing process are optimized, and the filling factor and the short-circuit current of the silicon-based organic-inorganic hybrid solar cell are improved effectively, and the photoelectric conversion efficiency of the silicon-based organic-inorganic hybrid solar cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based organic-inorganic hybrid solar cell of the present invention.
Detailed Description
The invention particularly provides a preparation method of a silicon-based organic-inorganic hybrid solar cell, which comprises the following steps:
1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 2-5 microns, the diameter of the silicon wire is 600-900 nanometers, the distance between adjacent silicon nanowires is 1-2 microns, and in the step 1, preparing the silicon wire array on the upper surface of the N-type monocrystalline silicon substrate by wet etching or dry etching.
2) Then passivating the N-type monocrystalline silicon substrate, wherein the specific steps of passivating the N-type monocrystalline silicon substrate are as follows: soaking the N-type monocrystalline silicon substrate in HF for 3-10 minutes, then chloridizing the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate.
3) Preparation of the first Spiro-OMeTAD layer: at a pressure of 1.0X10 5 Dripping the first Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 2 in a sealed cavity of Pa, standing for 1-2 min, and keeping the pressure in the sealed cavity from 1.0X10 during standing 5 Pa is gradually increased to 1.3X10 5 Pa, then at a pressure of 1.3X10 5 Spin-coating for 60-90 seconds under Pa, and then performing a first annealing treatment to form a first Spiro-OMeTAD layer.
In the step 3), the concentration of the Spiro-OMeTAD in the first Spiro-OMeTAD solution is 10-20mg/ml, the rotating speed of the spin-coating of the first Spiro-OMeTAD solution is 2000-3000 rpm, and the specific steps of the first annealing treatment are as follows: at a pressure of 1.3X10 5 And heat-treating at 80-90deg.C for 10-15 min under Pa.
4) Preparation of the second Spiro-OMeTAD layer: at a pressure of 1.3X10 5 Dripping the second Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 3 in the Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.3X10 during standing 5 Pa is gradually increased to 1.6X10 5 Pa, then at a pressure of 1.6X10 5 Spin-coating for 60-90 seconds under Pa, and then carrying out a second annealing treatment to form a second Spiro-OMeTAD layer.
In the step 4), the concentration of the Spiro-OMeTAD in the second Spiro-OMeTAD solution is 5-10mg/ml, the rotating speed of the second Spiro-OMeTAD solution is 3000-4000 rpm, and the specific steps of the second annealing treatment are as follows: at a pressure of 1.6X10 5 And heat-treating at 85-95deg.C for 15-20 min under Pa.
5) Preparation of first PEDOT: PSS layer: at a pressure of 1.0X10 5 Dripping PEDOT: PSS solution on the N-type monocrystalline silicon substrate obtained in the step 4 in a Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.0X10 in the standing process 5 Pa is gradually increased to 1.5X10 5 Pa, then atPressure is 1.5X10 5 Spin-coating for 60-90 seconds under Pa, and then performing a third annealing treatment to form a first PEDOT: PSS layer.
In the step 5), the rotational speed of the PEDOT-PSS solution is 2500-3500 rpm, and the specific steps of the third annealing treatment are as follows: at a pressure of 1.5X10 5 And heat-treating for 20-30 min at 120-140 deg.C under Pa.
6) And 5, preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step 5, wherein the method for forming the front electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the front electrode is made of copper or silver, the thickness of the front electrode is 90-150 nanometers, and the front electrode is a grid electrode.
7) And (3) evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate obtained in the step (6), wherein the thickness of the lithium fluoride layer is 1-2 nanometers.
8) And (3) preparing a back electrode on the back surface of the N-type monocrystalline silicon substrate obtained in the step (7), wherein the method for forming the back electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 100-200 nanometers.
The invention also provides a silicon-based organic-inorganic hybrid solar cell, which is prepared by adopting the method. As shown in fig. 1, the silicon-based organic-inorganic hybrid solar cell comprises a back electrode 1, a lithium fluoride layer 2, an N-type monocrystalline silicon substrate 3, a silicon line array 4, a Spiro-ome tad layer 5 (comprising a first Spiro-ome tad layer and a second Spiro-ome tad layer), a first PEDOT PSS layer 6 and a front electrode 7.
Example 1:
a preparation method of a silicon-based organic-inorganic hybrid solar cell comprises the following steps:
1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 4 microns, the diameter of the silicon wire is 800 nanometers, the distance between adjacent silicon nanowires is 1.5 microns, and in the step 1, preparing the silicon wire array on the upper surface of the N-type monocrystalline silicon substrate by using PS balls as masks through wet etching.
2) Then passivating the N-type monocrystalline silicon substrate, wherein the specific steps of passivating the N-type monocrystalline silicon substrate are as follows: soaking the N-type monocrystalline silicon substrate in HF for 6 minutes, then carrying out chlorination treatment on the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate.
3) Preparation of the first Spiro-OMeTAD layer: at a pressure of 1.0X10 5 Dripping the first Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 2 in a sealed cavity of Pa, standing for 1.5 min, and keeping the pressure in the sealed cavity from 1.0X10 during standing 5 Pa is gradually increased to 1.3X10 5 Pa, then at a pressure of 1.3X10 5 Spin-coating for 80 seconds under Pa, and then performing a first annealing treatment to form a first Spiro-OMeTAD layer.
Wherein in the step 3), the concentration of the Spiro-OMeTAD in the first Spiro-OMeTAD solution is 15mg/ml, the rotating speed of the spin-coating of the first Spiro-OMeTAD solution is 2500 rpm, and the specific steps of the first annealing treatment are as follows: at a pressure of 1.3X10 5 And heat-treating at 85 ℃ for 12 minutes under Pa.
4) Preparation of the second Spiro-OMeTAD layer: at a pressure of 1.3X10 5 Dripping the second Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 3 in the Pa closed cavity, standing for 1 min, and keeping the pressure in the closed cavity from 1.3X10 during standing 5 Pa is gradually increased to 1.6X10 5 Pa, then at a pressure of 1.6X10 5 Spin-coating for 80 seconds under Pa, and then carrying out a second annealing treatment to form a second Spiro-OMeTAD layer.
Wherein in the step 4), the concentration of the Spiro-OMeTAD in the second Spiro-OMeTAD solution is 7mg/ml, the rotating speed of the spin-coating of the second Spiro-OMeTAD solution is 3500 revolutions per minute, and the specific steps of the second annealing treatment are as follows: at a pressure of 1.6X10 5 Heat treatment at 90℃under PaAnd (5) arranging for 18 minutes.
5) Preparation of first PEDOT: PSS layer: at a pressure of 1.0X10 5 Dripping PEDOT: PSS solution on the N-type monocrystalline silicon substrate obtained in the step 4 in a Pa closed cavity, standing for 1.5 min, and keeping the pressure in the closed cavity from 1.0X10 in the standing process 5 Pa is gradually increased to 1.5X10 5 Pa, then at a pressure of 1.5X10 5 Spin-coating for 70 seconds under Pa, and then carrying out a third annealing treatment to form a first PEDOT: PSS layer.
In the step 5), the rotational speed of spin coating the PEDOT/PSS solution is 3000 rpm, and the specific steps of the third annealing treatment are as follows: at a pressure of 1.5X10 5 And heat-treating under Pa at 130 ℃ for 25 minutes.
6) And 5, preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step 5, wherein the method for forming the front electrode is thermal evaporation, the front electrode is made of copper, the thickness of the front electrode is 120 nanometers, and the front electrode is a gate electrode.
7) And (3) evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate obtained in the step (6), wherein the thickness of the lithium fluoride layer is 1.5 nanometers.
8) And (3) preparing a back electrode on the back surface of the N-type monocrystalline silicon substrate obtained in the step (7), wherein the method for forming the back electrode is thermal evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 150 nanometers.
The open-circuit voltage of the silicon-based organic-inorganic hybrid solar cell prepared by the method is 0.61V, and the short-circuit current is 35.8mA/cm 2 The fill factor was 0.75 and the photoelectric conversion efficiency was 16.4%.
Example 2
A preparation method of a silicon-based organic-inorganic hybrid solar cell comprises the following steps:
1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 2 microns, the diameter of the silicon wire is 600 nanometers, the distance between adjacent silicon nanowires is 1 micron, and in the step 1, preparing the silicon wire array on the upper surface of the N-type monocrystalline silicon substrate by dry etching.
2) Then passivating the N-type monocrystalline silicon substrate, wherein the specific steps of passivating the N-type monocrystalline silicon substrate are as follows: soaking the N-type monocrystalline silicon substrate in HF for 6 minutes, then carrying out chlorination treatment on the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate.
3) Preparation of the first Spiro-OMeTAD layer: at a pressure of 1.0X10 5 Dripping the first Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 2 in a sealed cavity of Pa, standing for 2 min, and keeping the pressure in the sealed cavity from 1.0X10 during standing 5 Pa is gradually increased to 1.3X10 5 Pa, then at a pressure of 1.3X10 5 Spin-coating for 90 seconds under Pa, and then performing a first annealing treatment to form a first Spiro-OMeTAD layer.
Wherein in the step 3), the concentration of the Spiro-OMeTAD in the first Spiro-OMeTAD solution is 20mg/ml, the rotating speed of the spin-coating of the first Spiro-OMeTAD solution is 3000 rpm, and the specific steps of the first annealing treatment are as follows: at a pressure of 1.3X10 5 And heat-treating at 90 ℃ for 15 minutes under Pa.
4) Preparation of the second Spiro-OMeTAD layer: at a pressure of 1.3X10 5 Dripping the second Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 3 in the Pa closed cavity, standing for 2 min, and keeping the pressure in the closed cavity from 1.3X10 during standing 5 Pa is gradually increased to 1.6X10 5 Pa, then at a pressure of 1.6X10 5 Spin-coating for 90 seconds under Pa, and then carrying out a second annealing treatment to form a second Spiro-OMeTAD layer.
Wherein in the step 4), the concentration of the Spiro-OMeTAD in the second Spiro-OMeTAD solution is 10mg/ml, the rotating speed of the spin coating of the second Spiro-OMeTAD solution is 4000 rpm, and the specific steps of the second annealing treatment are as follows: at a pressure of 1.6X10 5 Bars at 95℃under PaHeat treatment under the piece for 20 minutes.
5) Preparation of first PEDOT: PSS layer: at a pressure of 1.0X10 5 Dripping PEDOT: PSS solution on the N-type monocrystalline silicon substrate obtained in the step 4 in a Pa closed cavity, standing for 2 minutes, and keeping the pressure in the closed cavity from 1.0X10 in the standing process 5 Pa is gradually increased to 1.5X10 5 Pa, then at a pressure of 1.5X10 5 Spin-coating for 90 seconds under Pa, and then performing a third annealing treatment to form a first PEDOT: PSS layer.
In the step 5), the rotational speed of the PEDOT-PSS solution is 3500 revolutions per minute, and the specific steps of the third annealing treatment are as follows: at a pressure of 1.5X10 5 And heat-treating at 140 ℃ for 30 minutes under Pa.
6) And 5, preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step 5, wherein the method for forming the front electrode is thermal evaporation, the front electrode is made of silver, the thickness of the front electrode is 90 nanometers, and the front electrode is a gate electrode.
7) And (3) evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate obtained in the step (6), wherein the thickness of the lithium fluoride layer is 1 nanometer.
8) And (3) preparing a back electrode on the back surface of the N-type monocrystalline silicon substrate obtained in the step (7), wherein the method for forming the back electrode is thermal evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 200 nanometers.
The open-circuit voltage of the silicon-based organic-inorganic hybrid solar cell prepared by the method is 0.59V, and the short-circuit current is 34.9mA/cm 2 The fill factor was 0.74 and the photoelectric conversion efficiency was 15.2%.
Comparative example:
in order to highlight that the silicon-based organic-inorganic hybrid solar cell of the invention has excellent photoelectric conversion efficiency, as a comparison, a conventional silicon-based organic-inorganic hybrid solar cell manufacturing method comprises the following steps: 1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 4 microns, the diameter of the silicon wire is 800 nanometers, the distance between adjacent silicon nanowires is 1.5 microns, and in the step 1, preparing the silicon wire array on the upper surface of the N-type monocrystalline silicon substrate by using PS balls as masks through wet etching. 2) Then passivating the N-type monocrystalline silicon substrate, wherein the specific steps of passivating the N-type monocrystalline silicon substrate are as follows: soaking the N-type monocrystalline silicon substrate in HF for 6 minutes, then carrying out chlorination treatment on the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate. 3) Preparation of the Spiro-OMeTAD layer: the solution of Spiro-OMeTAD was spin-coated at a concentration of 20mg/ml for 80 seconds at a spin speed of 2500 rpm, and then heat-treated at 85℃for 20 minutes to form a Spiro-OMeTAD layer. 4) PEDOT: preparation of PSS layer: and spin-coating the PEDOT-PSS solution, wherein the spin-coating time is 70 seconds, the spin-coating rotating speed is 3000 rpm, and the heat treatment is carried out for 25 minutes at 130 ℃ to form the PEDOT-PSS layer. 5) And (3) preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step (4), wherein the method for forming the front electrode is thermal evaporation, the front electrode is made of copper, the thickness of the front electrode is 120 nanometers, and the front electrode is a gate electrode. 6) And 5, preparing a back electrode on the back surface of the N-type monocrystalline silicon substrate obtained in the step 5, wherein the method for forming the back electrode is thermal evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 150 nanometers.
The open-circuit voltage of the silicon-based organic-inorganic hybrid solar cell prepared by the method is 0.6V, and the short-circuit current is 31.8mA/cm 2 The fill factor was 0.71 and the photoelectric conversion efficiency was 13.5%.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (7)
1. A preparation method of a silicon-based organic-inorganic hybrid solar cell is characterized by comprising the following steps: the method comprises the following steps:
1) Providing an N-type monocrystalline silicon substrate, preparing a silicon wire array on the upper surface of the N-type monocrystalline silicon substrate, wherein the length of a silicon wire in the silicon wire array is 2-5 microns, the diameter of the silicon wire is 600-900 nanometers, and the distance between adjacent silicon nanowires is 1-2 microns;
2) Then, passivating the N-type monocrystalline silicon substrate;
3) Preparation of the first Spiro-OMeTAD layer: at a pressure of 1.0X10 5 Dripping the first Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 2) in a Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.0X10 in the standing process 5 Pa is gradually increased to 1.3X10 5 Pa, then at a pressure of 1.3X10 5 Spin-coating for 60-90 seconds under the Pa condition, and then performing a first annealing treatment to form a first Spiro-OMeTAD layer;
4) Preparation of the second Spiro-OMeTAD layer: at a pressure of 1.3X10 5 Dripping the second Spiro-OMeTAD solution on the N-type monocrystalline silicon substrate obtained in the step 3) in the Pa closed cavity, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.3X10 during standing 5 Pa is gradually increased to 1.6X10 5 Pa, then at a pressure of 1.6X10 5 Spin-coating for 60-90 seconds under the Pa condition, and then carrying out a second annealing treatment to form a second Spiro-OMeTAD layer;
5) Preparation of first PEDOT: PSS layer: at a pressure of 1.0X10 5 Dripping PEDOT: PSS solution on the N-type monocrystalline silicon substrate obtained in the step 4) in a closed cavity of Pa, standing for 1-2 min, and keeping the pressure in the closed cavity from 1.0X10 during standing 5 Pa is gradually increased to 1.5X10 5 Pa, then at a pressure of 1.5X10 5 Spin-coating for 60-90 seconds under Pa, and then carrying out annealing treatment for the third time to form a first PEDOT PSS layer;
6) Preparing a front electrode on the N-type monocrystalline silicon substrate obtained in the step 5);
7) Evaporating a lithium fluoride layer on the back surface of the N-type monocrystalline silicon substrate obtained in the step 6);
8) Preparing a back electrode on the back of the N-type monocrystalline silicon substrate obtained in the step 7);
in the step 3), the concentration of the Spiro-OMeTAD in the first Spiro-OMeTAD solution is 10-20mg/ml, the rotating speed of the spin-coating of the first Spiro-OMeTAD solution is 2000-3000 rpm, and the specific steps of the first annealing treatment are as follows: at a pressure of 1.3X10 5 Heat treatment under Pa condition at 80-90deg.C for 10-15 min;
in the step 4), the concentration of the Spiro-OMeTAD in the second Spiro-OMeTAD solution is 5-10mg/ml, the rotating speed of the second Spiro-OMeTAD solution is 3000-4000 rpm, and the specific steps of the second annealing treatment are as follows: at a pressure of 1.6X10 5 And heat-treating at 85-95deg.C for 15-20 min under Pa.
2. The method for preparing a silicon-based organic-inorganic hybrid solar cell according to claim 1, wherein: in the step 1), the silicon line array is prepared on the upper surface of the N-type monocrystalline silicon substrate by wet etching or dry etching.
3. The method for preparing a silicon-based organic-inorganic hybrid solar cell according to claim 1, wherein: in the step 2), the specific steps of passivating the N-type monocrystalline silicon substrate are as follows: soaking the N-type monocrystalline silicon substrate in HF for 3-10 minutes, then chloridizing the hydrogenated N-type monocrystalline silicon substrate to enable silicon-hydrogen bonds to be changed into silicon-chlorine bonds, and then carrying out methylation treatment on the N-type monocrystalline silicon substrate to enable the silicon-chlorine bonds to be changed into silicon-carbon bonds so as to passivate the N-type monocrystalline silicon substrate.
4. The method for preparing a silicon-based organic-inorganic hybrid solar cell according to claim 1, wherein: in the step 5), the rotational speed of the PEDOT-PSS solution is 2500-3500 rpm, and the specific steps of the third annealing treatment are as follows: at a pressure of 1.5X10 5 And heat-treating for 20-30 min at 120-140 deg.C under Pa.
5. The method for preparing a silicon-based organic-inorganic hybrid solar cell according to claim 1, wherein: in the step 6), the method for forming the front electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the material of the front electrode is copper or silver, the thickness of the front electrode is 90-150 nanometers, and the front electrode is a grid electrode.
6. The method for preparing a silicon-based organic-inorganic hybrid solar cell according to claim 1, wherein: in the step 7), the thickness of the lithium fluoride layer is 1-2 nanometers, and in the step 8), the method for forming the back electrode is one of thermal evaporation, magnetron sputtering and electron beam evaporation, the material of the back electrode is aluminum, and the thickness of the back electrode is 100-200 nanometers.
7. A silicon-based organic-inorganic hybrid solar cell, characterized in that the silicon-based organic-inorganic hybrid solar cell is prepared by the method of any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911158110.XA CN110931641B (en) | 2019-11-22 | 2019-11-22 | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911158110.XA CN110931641B (en) | 2019-11-22 | 2019-11-22 | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110931641A CN110931641A (en) | 2020-03-27 |
| CN110931641B true CN110931641B (en) | 2024-01-02 |
Family
ID=69850847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911158110.XA Active CN110931641B (en) | 2019-11-22 | 2019-11-22 | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110931641B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946470A (en) * | 2017-11-28 | 2018-04-20 | 佛山市宝粤美科技有限公司 | A kind of heterojunction solar battery and preparation method thereof |
| CN108461580A (en) * | 2018-05-04 | 2018-08-28 | 苏州宝澜环保科技有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN108598288A (en) * | 2018-07-10 | 2018-09-28 | 上海大学 | A kind of composite multifunction OLED electrodes and preparation method thereof |
| CN108598267A (en) * | 2018-06-08 | 2018-09-28 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction solar cell and preparation method thereof |
| CN110364628A (en) * | 2019-07-15 | 2019-10-22 | 上海大学 | A kind of hybrid dimension flexible transparent electrode and its preparation method and application |
-
2019
- 2019-11-22 CN CN201911158110.XA patent/CN110931641B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946470A (en) * | 2017-11-28 | 2018-04-20 | 佛山市宝粤美科技有限公司 | A kind of heterojunction solar battery and preparation method thereof |
| CN108461580A (en) * | 2018-05-04 | 2018-08-28 | 苏州宝澜环保科技有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN108598267A (en) * | 2018-06-08 | 2018-09-28 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction solar cell and preparation method thereof |
| CN108598288A (en) * | 2018-07-10 | 2018-09-28 | 上海大学 | A kind of composite multifunction OLED electrodes and preparation method thereof |
| CN110364628A (en) * | 2019-07-15 | 2019-10-22 | 上海大学 | A kind of hybrid dimension flexible transparent electrode and its preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110931641A (en) | 2020-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dong et al. | Chlorobenzenesulfonic potassium salts as the efficient multifunctional passivator for the buried interface in regular perovskite solar cells | |
| CN107946471B (en) | Heterojunction photovoltaic cell based on silicon nanowire array and preparation method thereof | |
| CN107946470B (en) | Heterojunction solar cell and preparation method thereof | |
| CN107994119B (en) | Organic-inorganic hybrid solar cell and preparation method thereof | |
| CN109904330B (en) | Based on passivation material Me4Method for preparing tin-lead hybrid perovskite solar cell by NBr | |
| CN108417719B (en) | Silicon-based core-shell structure photovoltaic cell and preparation method thereof | |
| Jiang et al. | Efficiency enhancement mechanism for poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)/silicon nanowires hybrid solar cells using alkali treatment | |
| Yameen et al. | Low temperature fabrication of PEDOT: PSS/micro-textured silicon-based heterojunction solar cells | |
| Ge et al. | Substantial improvement of short wavelength response in n-SiNW/PEDOT: PSS solar cell | |
| CN108258124B (en) | Heterojunction photovoltaic cell and preparation method thereof | |
| CN105470399A (en) | Perovskite solar cell based on undoped organic hole transport layer and preparation method | |
| CN107946384A (en) | A kind of silicon PEDOT:PSS hybrid solar cells and preparation method thereof | |
| CN108023021B (en) | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof | |
| CN110931641B (en) | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof | |
| CN108011045B (en) | Silicon micro-column array organic-inorganic hybrid solar cell and preparation method thereof | |
| CN108183150B (en) | Heterojunction photovoltaic cell and preparation method thereof | |
| Kois et al. | Glass/ITO/In (O, S)/CuIn (S, Se) 2 solar cell with conductive polymer window layer | |
| WO2019144336A1 (en) | Solar cell module | |
| CN102769102A (en) | Solution-processable anode modification material for solar battery and modification method thereof | |
| CN110993794B (en) | Heterojunction solar cell and preparation method thereof | |
| CN108807679B (en) | Si-PEDOT (Poly ethylene diamine tetra-ethyl ether)/PSS (Poly styrene) organic-inorganic hybrid solar cell and preparation method thereof | |
| CN108336181B (en) | A kind of solar battery and preparation method thereof | |
| CN108336234B (en) | Solar cell based on modified conductive polymer and preparation method thereof | |
| CN109935698B (en) | In2Se3Organic solar cell as hole transport layer and method for manufacturing the same | |
| CN108172686B (en) | Silicon photovoltaic cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231128 Address after: 4407-55, 4th Floor, Building 4, Shanxi Data Flow Ecological Park, No. 1 Huazhang North Street, Science and Technology Innovation City, Shanxi Transformation Comprehensive Reform Demonstration Zone, Taiyuan City, Shanxi Province, 030000 Applicant after: Shanxi Jinkai Electric Power Technology Co.,Ltd. Address before: 221000 room 527, building 11, Xuzhou Software Park, No. 6, Software Park Road, Quanshan District, Xuzhou City, Jiangsu Province Applicant before: Xuzhou wurui Information Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |