CN108023021B - silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof - Google Patents
silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof Download PDFInfo
- Publication number
- CN108023021B CN108023021B CN201711249126.2A CN201711249126A CN108023021B CN 108023021 B CN108023021 B CN 108023021B CN 201711249126 A CN201711249126 A CN 201711249126A CN 108023021 B CN108023021 B CN 108023021B
- Authority
- CN
- China
- Prior art keywords
- spiro
- ometad
- pedot
- pss
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a silicon-Spiro-OMeTAD heterojunction photovoltaic cell and a preparation method thereof. The preparation method of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell comprises the following steps: cleaning the n-type silicon substrate; carrying out surface methylation treatment on the n-type silicon substrate; preparing a Spiro-OMeTAD layer; preparing a Spiro-OMeTAD/PEDOT PSS composite layer; preparing a PSS layer; preparing a front electrode; and preparing a back electrode, wherein the Spiro-OMeTAD layer and the Spiro-OMeTAD/PEDOT PSS composite layer both contain zirconium diselenide nanosheets and tantalum diselenide nanosheets. The synergy between layers in the silicon-Spiro-OMeTAD heterojunction photovoltaic cell enables the cell to have excellent photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a silicon-cyclone-OMeTAD heterojunction photovoltaic cell and a preparation method thereof.
Background
With the high development of industry and the continuous increase of population, energy problems become key problems restricting the development of human beings. The solar energy is energy which is accumulated in nuclear fusion in the sun and can be exploded to radiate outwards, and compared with the traditional energy, the solar energy is inexhaustible. How to fully utilize solar energy to make solar energy really replace petrochemical energy becomes the most important source of energy consumption of all mankind, and has become the research focus of people. At present, there are two main ways of utilizing solar energy: photothermal conversion and photoelectric conversion. The most important representative of the photothermal conversion is a solar water heater, and the best application mode of the photoelectric conversion is a solar cell.
The photoelectric conversion efficiency of the monocrystalline silicon solar cell and the polycrystalline silicon solar cell is excellent, the cost of the monocrystalline silicon solar cell and the polycrystalline silicon solar cell is high due to the complex and tedious preparation process of the monocrystalline silicon solar cell and the polycrystalline silicon solar cell, and the problem that the photoelectric conversion efficiency of the amorphous silicon thin film solar cell is attenuated along with the increase of illumination time is not properly solved. The organic-inorganic hybrid silicon heterojunction solar cell attracts people's attention due to simple preparation process, however, the existing organic-inorganic hybrid silicon heterojunction solar cell has low photoelectric conversion efficiency.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a silicon-Spiro-OMeTAD heterojunction photovoltaic cell and a preparation method thereof.
In order to achieve the above object, the present invention provides a method for preparing a silicon-Spiro-OMeTAD heterojunction photovoltaic cell, comprising the following steps: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2000-3000 r/min, and then performing annealing treatment to form the Spiro-OMeTAD layer; (4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 3500-4000 rpm, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer; (5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: PSS solution, the spin coating speed is 2000-2500 rpm, then annealing treatment is carried out, and the PEDOT PSS layer is formed; (6) preparing a front electrode; (7) preparing a back electrode; wherein the concentration of the zirconium diselenide nanosheets in the mixed solution in the steps (3) and (4) is 0.1-0.5mg/ml, the concentration of the tantalum diselenide nanosheets is 0.1-0.5mg/ml, the concentration of Spiro-OMeTAD is 10-15mg/ml, and the concentration of PEDOT: PSS in the PEDOT: PSS solution in the steps (4) and (5) is 8-12 mg/ml.
Preferably, the cleaning of the n-type silicon substrate in the step (1) includes: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use.
Preferably, the surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface.
Preferably, the annealing temperature of the annealing treatment in the step (3) is 100-110 ℃ and the annealing time is 10-20 minutes; the annealing temperature of the annealing treatment in the step (4) is 90-100 ℃, and the annealing time is 5-10 minutes; the annealing temperature of the annealing treatment in the step (5) is 110-120 ℃, and the annealing time is 10-20 minutes.
Preferably, the front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 100-150 nm.
Preferably, the back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 200 nm-300 nm.
The invention also provides a silicon-Spiro-OMeTAD heterojunction photovoltaic cell which is prepared by the method.
Compared with the prior art, the invention has the following advantages:
in the silicon-Spiro-OMeTAD heterojunction photovoltaic cell, the Spiro-OMeTAD layer contains the zirconium diselenide nanosheets and the tantalum diselenide nanosheets, so that the contact performance between the Si/Spiro-OMeTAD heterojunction can be adjusted, the built-in electric field is improved, the conductivity of the Spiro-OMeTAD layer is improved, the separation and the transmission of electron hole pairs are facilitated, and the open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell is improved.
A layer of Spiro-OMeTAD/PEDOT: PSS composite layer is arranged between the Spiro-OMeTAD layer and the PEDOT: PSS layer, the composite layer is formed by spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets, Spiro-OMeTAD and PEDOT: PSS solution in sequence and then annealing together, the zirconium diselenide nanosheets, tantalum diselenide nanosheets, Spiro-OMeTAD and PEDOT: PSS are mixed with each other in the annealing process to form a uniform and compact composite layer, the contact performance between the Spiro-OMeTAD layer and the PEDOT: PSS layer is improved, holes in the Spiro-OMeTAD layer can be rapidly transmitted to the PEDOT: PSS layer through the composite layer and then collected by a front electrode, the short-circuit current and the filling factor of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell are improved, photoelectric conversion can be stably and efficiently carried out, specific process parameters of each step are optimized, the photoelectric conversion efficiency of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell is up to 13.7%.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-Spiro-OMeTAD heterojunction photovoltaic cell of the present invention.
Detailed Description
The preparation method of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell provided by the specific embodiment of the invention comprises the following steps: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2000-3000 r/min, and then performing annealing treatment to form the Spiro-OMeTAD layer; (4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 3500-4000 rpm, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer; (5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: PSS solution, the spin coating speed is 2000-2500 rpm, then annealing treatment is carried out, and the PEDOT PSS layer is formed; (6) preparing a front electrode; (7) preparing a back electrode; wherein the concentration of the zirconium diselenide nanosheets in the mixed solution in the steps (3) and (4) is 0.1-0.5mg/ml, the concentration of the tantalum diselenide nanosheets is 0.1-0.5mg/ml, the concentration of Spiro-OMeTAD is 10-15mg/ml, and the concentration of PEDOT: PSS in the PEDOT: PSS solution in the steps (4) and (5) is 8-12 mg/ml.
Wherein the cleaning of the n-type silicon substrate in the step (1) comprises: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use. The surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface. The annealing temperature of the annealing treatment in the step (3) is 100-110 ℃ and the annealing time is 10-20 minutes; the annealing temperature of the annealing treatment in the step (4) is 90-100 ℃, and the annealing time is 5-10 minutes; the annealing temperature of the annealing treatment in the step (5) is 110-120 ℃, and the annealing time is 10-20 minutes. The front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 100-150 nm. The back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 200 nm-300 nm.
As shown in fig. 1, the silicon-Spiro-OMeTAD heterojunction photovoltaic cell prepared by the method comprises a back electrode 1, an n-type silicon substrate 2, a Spiro-OMeTAD layer 3, a Spiro-OMeTAD/PEDOT: PSS composite layer 4, a PEDOT: PSS layer 5 and a front electrode 6 from bottom to top.
Example 1:
a preparation method of a silicon-Spiro-OMeTAD heterojunction photovoltaic cell comprises the following steps: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2500 rpm, and then performing annealing treatment to form a Spiro-OMeTAD layer; (4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 3800 r/min, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer; (5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: the PSS solution is spin-coated at 2300 rpm, and then annealing treatment is carried out to form the PEDOT, namely the PSS layer; (6) preparing a front electrode; (7) preparing a back electrode; wherein the concentration of zirconium diselenide nanosheets in the mixed solution in steps (3) and (4) is 0.3mg/ml, the concentration of tantalum diselenide nanosheets is 0.3mg/ml, the concentration of Spiro-OMeTAD is 12mg/ml, and the concentration of PEDOT: PSS in the PEDOT: PSS solution in steps (4) and (5) is 10 mg/ml.
Wherein the cleaning of the n-type silicon substrate in the step (1) comprises: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use. The surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface. The annealing temperature of the annealing treatment in the step (3) is 105 ℃ and the annealing time is 15 minutes; the annealing temperature of the annealing treatment in the step (4) is 95 ℃, and the annealing time is 7 minutes; the annealing temperature of the annealing treatment in the step (5) is 115 ℃, and the annealing time is 15 minutes. The front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 120 nm. The back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 270 nm.
The open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell prepared by the method is 0.6V, and the short-circuit current is 30.5mA/cm2The fill factor was 0.75, and the photoelectric conversion efficiency was 13.7%.
Example 2
A preparation method of a silicon-Spiro-OMeTAD heterojunction photovoltaic cell comprises the following steps: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2000-3000 r/min, and then performing annealing treatment to form the Spiro-OMeTAD layer; (4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 3500 rpm, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer; (5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: PSS solution, the spin coating speed is 2000 r/min, then annealing treatment is carried out, and the PEDOT, PSS layer is formed; (6) preparing a front electrode; (7) preparing a back electrode; wherein the concentration of zirconium diselenide nanosheets in the mixed solution in steps (3) and (4) is 0.1mg/ml, the concentration of tantalum diselenide nanosheets is 0.1mg/ml, the concentration of Spiro-OMeTAD is 10mg/ml, and the concentration of PEDOT: PSS in the PEDOT: PSS solution in steps (4) and (5) is 8 mg/ml.
Wherein the cleaning of the n-type silicon substrate in the step (1) comprises: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use. The surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface. The annealing temperature of the annealing treatment in the step (3) is 100 ℃ and the annealing time is 10 minutes; the annealing temperature of the annealing treatment in the step (4) is 90 ℃, and the annealing time is 5 minutes; the annealing temperature of the annealing treatment in the step (5) is 110 ℃, and the annealing time is 20 minutes. The front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 100 nanometers. The back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 200 nm.
The open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell prepared by the method is 0.58V, and the short-circuit current is 29mA/cm2The fill factor was 0.7 and the photoelectric conversion efficiency was 11.8%.
Example 3
A preparation method of a silicon-Spiro-OMeTAD heterojunction photovoltaic cell comprises the following steps: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2000-3000 r/min, and then performing annealing treatment to form the Spiro-OMeTAD layer; (4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 4000 revolutions per minute, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer; (5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: PSS solution, the spin coating speed is 2500 rpm, then annealing treatment is carried out, and the PEDOT, PSS layer is formed; (6) preparing a front electrode; (7) preparing a back electrode; wherein the concentration of zirconium diselenide nanosheets in the mixed solution in steps (3) and (4) is 0.5mg/ml, the concentration of tantalum diselenide nanosheets is 0.5mg/ml, the concentration of Spiro-OMeTAD is 15mg/ml, and the concentration of PEDOT: PSS in the PEDOT: PSS solution in steps (4) and (5) is 12 mg/ml.
Wherein the cleaning of the n-type silicon substrate in the step (1) comprises: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use. The surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface. The annealing temperature of the annealing treatment in the step (3) is 110 ℃ and the annealing time is 15 minutes; the annealing temperature of the annealing treatment in the step (4) is 100 ℃, and the annealing time is 10 minutes; the annealing temperature of the annealing treatment in the step (5) is 120 ℃, and the annealing time is 20 minutes. The front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 150 nm. The back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 300 nanometers.
The open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell prepared by the method is 0.57V, and the short-circuit current is 28.5mA/cm2The fill factor was 0.67, and the photoelectric conversion efficiency was 10.9%.
Comparative example:
by way of comparison, a method of fabricating a silicon-Spiro-OMeTAD heterojunction photovoltaic cell, comprising the steps of: (1) cleaning the n-type silicon substrate; (2) passivating the surface of the n-type silicon substrate; (3) preparation of a Spiro-OMeTAD layer: spin-coating a Spiro-OMeTAD solution on the front surface of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2500 rpm, and then performing annealing treatment to form the Spiro-OMeTAD layer; (4) preparation of PEDOT: PSS layer: and (3) spin coating PEDOT on the surface of the Spiro-OMeTAD layer: the PSS solution is spin-coated at 2300 rpm, and then annealing treatment is carried out to form the PEDOT, namely the PSS layer; (5) preparing a front electrode; (6) preparing a back electrode; wherein the concentration of Spiro-OMeTAD in the Spiro-OMeTAD solution is 12mg/ml, and the concentration of PEDOT to PSS in the PEDOT to PSS solution is 10 mg/ml.
Wherein the cleaning of the n-type silicon substrate in the step (1) comprises: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use. The surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface. The annealing temperature of the annealing treatment in the step (3) is 105 ℃ and the annealing time is 15 minutes; the annealing temperature of the annealing treatment in the step (4) is 115 ℃, and the annealing time is 25 minutes. The front electrode in the step (5) is a silver gate electrode, and the thickness of the front electrode is 120 nm. The back electrode in the step (6) is an aluminum electrode, and the thickness of the back electrode is 270 nm.
The open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cell is 0.53V, and the short-circuit current is 24.6mA/cm2The fill factor was 0.55, and the photoelectric conversion efficiency was 7.2%.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (6)
1. A preparation method of a silicon-Spiro-OMeTAD heterojunction photovoltaic cell is characterized by comprising the following steps: the method comprises the following steps:
(1) cleaning the n-type silicon substrate;
(2) passivating the surface of the n-type silicon substrate;
(3) preparation of a Spiro-OMeTAD layer: spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD on the front side of the n-type silicon substrate obtained in the step (2), wherein the spin-coating rotation speed is 2000-3000 r/min, and then performing annealing treatment to form the Spiro-OMeTAD layer;
(4) preparation of Spiro-OMeTAD/PEDOT PSS composite layer: sequentially spin-coating a mixed solution containing zirconium diselenide nanosheets, tantalum diselenide nanosheets and Spiro-OMeTAD and a PEDOT (PSS) solution on the surface of the Spiro-OMeTAD layer at the spin-coating speed of 3500-4000 rpm, and then carrying out annealing treatment to form the Spiro-OMeTAD/PEDOT (PSS) composite layer;
(5) preparation of PEDOT: PSS layer: and spin-coating PEDOT on the surface of the Spiro-OMeTAD/PEDOT composite layer: PSS solution, the spin coating speed is 2000-2500 rpm, then annealing treatment is carried out, and the PEDOT PSS layer is formed;
(6) preparing a front electrode;
(7) preparing a back electrode;
wherein the concentration of the zirconium diselenide nanosheets in the mixed solution in the steps (3) and (4) is 0.1-0.5mg/ml, the concentration of the tantalum diselenide nanosheets is 0.1-0.5mg/ml, the concentration of Spiro-OMeTAD is 10-15mg/ml, and the concentration of PEDOT: PSS in the PEDOT solution in the steps (4) and (5) is 8-12 mg/ml; wherein the annealing temperature of the annealing treatment in the step (3) is 100-110 ℃ and the annealing time is 10-20 minutes; the annealing temperature of the annealing treatment in the step (4) is 90-100 ℃, and the annealing time is 5-10 minutes; the annealing temperature of the annealing treatment in the step (5) is 110-120 ℃, and the annealing time is 10-20 minutes.
2. The method of preparing a silicon-Spiro-OMeTAD heterojunction photovoltaic cell of claim 1, wherein: the cleaning of the n-type silicon substrate in the step (1) includes: and ultrasonically cleaning the n-type silicon substrate in acetone, ethanol and deionized water in sequence, and then blowing the n-type silicon substrate by using nitrogen for later use.
3. The method of preparing a silicon-Spiro-OMeTAD heterojunction photovoltaic cell of claim 1, wherein: the surface passivation treatment of the n-type silicon substrate in the step (2) includes: the n-type silicon substrate is subjected to a methylation process to form Si-CH3 bonds to passivate the silicon surface.
4. The method of preparing a silicon-Spiro-OMeTAD heterojunction photovoltaic cell of claim 1, wherein: the front electrode in the step (6) is a silver gate electrode, and the thickness of the front electrode is 100-150 nm.
5. The method of preparing a silicon-Spiro-OMeTAD heterojunction photovoltaic cell of claim 1, wherein: the back electrode in the step (7) is an aluminum electrode, and the thickness of the back electrode is 200 nm-300 nm.
6. A silicon-Spiro-OMeTAD heterojunction photovoltaic cell, wherein the silicon-Spiro-OMeTAD heterojunction photovoltaic cell is a silicon-Spiro-OMeTAD heterojunction photovoltaic cell formed by a method according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249126.2A CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249126.2A CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108023021A CN108023021A (en) | 2018-05-11 |
| CN108023021B true CN108023021B (en) | 2020-11-24 |
Family
ID=62078282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711249126.2A Active CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108023021B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598267B (en) * | 2018-06-08 | 2021-09-24 | 常州福佑达智能装备科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN108847449B (en) * | 2018-06-21 | 2021-11-02 | 江苏日御光伏新材料科技有限公司 | Novel heterojunction photovoltaic cell and preparation method thereof |
| CN109326719B (en) * | 2018-09-28 | 2022-05-27 | 青岛融合装备科技有限公司 | Heterojunction solar cell based on N-type monocrystalline silicon substrate and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876595A (en) * | 2017-04-21 | 2017-06-20 | 江苏天雄电气自动化有限公司 | A kind of silicon heterogenous solar cell of N-type and preparation method thereof |
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
-
2017
- 2017-12-01 CN CN201711249126.2A patent/CN108023021B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
| CN106876595A (en) * | 2017-04-21 | 2017-06-20 | 江苏天雄电气自动化有限公司 | A kind of silicon heterogenous solar cell of N-type and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "基于硅纳米线阵列的有机/无机杂化光伏电池的制备及性能表征研究 ";申小娟;《中国博士学位论文全文数据库(电子期刊)》;20131015;44-70 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108023021A (en) | 2018-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111180587B (en) | Special doped perovskite solar cell and preparation method thereof | |
| CN113257940B (en) | Laminated photovoltaic device and production method | |
| CN102299206B (en) | Heterojunction solar cell and manufacturing method thereof | |
| CN108023021B (en) | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof | |
| CN103594627A (en) | Inversed organic thin-film solar cell and manufacturing method of inversed organic thin-film solar cell | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| CN107895760A (en) | A kind of silicon nanowire array heterojunction solar battery and preparation method thereof | |
| Zhang et al. | High-performance ultrathin organic–inorganic hybrid silicon solar cells via solution-processed interface modification | |
| JP2012186415A (en) | Manufacturing method of photoelectric conversion element, photoelectric conversion element, and tandem-type photoelectric conversion element | |
| WO2021047673A1 (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN103000709B (en) | Back electrode, back electrode absorbing layer composite structure and solar cell | |
| CN104241411A (en) | Efficient cadmium telluride nanocrystalline Schottky junction solar cell with modified anode interface and preparing method thereof | |
| CN114335348B (en) | PN heterojunction antimony selenide/perovskite solar cell and preparation method thereof | |
| CN108258124A (en) | A kind of heterojunction photovoltaic cell and preparation method thereof | |
| CN108878594B (en) | Silicon heterojunction photovoltaic cell and manufacturing method thereof | |
| CN108183150B (en) | Heterojunction photovoltaic cell and preparation method thereof | |
| CN108011045B (en) | Silicon micro-column array organic-inorganic hybrid solar cell and preparation method thereof | |
| CN112885967B (en) | Double-layer organic solar cell based on delayed fluorescent material and preparation method | |
| Jarkov et al. | Conductive polymer PEDOT: PSS back contact for CdTe solar cell | |
| CN104485367A (en) | Micro-nano structure capable of improving properties of HIT solar cells and preparation method of micro-nano structure | |
| CN112349801B (en) | Intermediate series layer of laminated battery, production method thereof and laminated battery | |
| CN108807679B (en) | Si-PEDOT (Poly ethylene diamine tetra-ethyl ether)/PSS (Poly styrene) organic-inorganic hybrid solar cell and preparation method thereof | |
| CN109192798B (en) | P-type monocrystalline silicon HIT photovoltaic cell and manufacturing method thereof | |
| CN108695435A (en) | A kind of organic solar batteries and preparation method thereof based on ultrasonic wave annealing process | |
| CN101707219B (en) | Solar cell with intrinsic isolation structure and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201110 Address after: 221000 Wujiang Road, industrial park, Yitang Town, Pizhou City, Xuzhou City, Jiangsu Province Applicant after: Xuzhou jialitai New Material Technology Co., Ltd Address before: No. 1701 Binhe Road, Suzhou High-tech Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU BAOLAN ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |