CN108023021A - A kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells and preparation method thereof - Google Patents
A kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells and preparation method thereof Download PDFInfo
- Publication number
- CN108023021A CN108023021A CN201711249126.2A CN201711249126A CN108023021A CN 108023021 A CN108023021 A CN 108023021A CN 201711249126 A CN201711249126 A CN 201711249126A CN 108023021 A CN108023021 A CN 108023021A
- Authority
- CN
- China
- Prior art keywords
- spiro
- ometad
- preparation
- pedot
- pss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of silicon-Spiro OMeTAD heterojunction photovoltaic cells and preparation method thereof.The preparation method of the silicon-Spiro OMeTAD heterojunction photovoltaic cells includes：The cleaning of n-type silicon substrate；The surface methyl groupsization processing of n-type silicon substrate；The preparation that OMeTAD layers of Spiro；Spiro‑OMeTAD/PEDOT:The preparation of PSS composite beds；PEDOT:The preparation of PSS layer；The preparation of front electrode；The preparation of backplate, wherein described Spiro OMeTAD layers and the Spiro OMeTAD/PEDOT:Contain zirconium diselenide nanometer sheet and two selenizing tantalum nanometer sheets in PSS composite beds.Synergistic effect in the silicon-Spiro OMeTAD heterojunction photovoltaic cells between each layer causes it with excellent photoelectric conversion efficiency.
Description
Technical field
The present invention relates to photovoltaic cell technical field, more particularly to a kind of silicon-Spiro-OMeTAD heterojunction photovoltaics electricity
Pond and preparation method thereof.
Background technology
With the high development of industry and the sustainable growth of population, energy problem will be asked as the key for restricting human development
Topic.It is that the nuclear fusion that solar energy comes from solar interior is contained and the energy to external radiation can be broken out, with traditional energy
Compare, solar energy is inexhaustible.How solar energy is made full use of so that solar energy really substitutes fossil energy, into
For the most important source of the energy consumption of the whole mankind, it has also become the research emphasis of people.Currently with the major way of solar energy
There are two kinds：Photothermal conversion and opto-electronic conversion.The most important representative of photothermal conversion is solar water heater, and opto-electronic conversion is best to answer
It is exactly solar cell with mode.
The electricity conversion of single crystal silicon solar cell and polysilicon solar cell is excellent, due to mono-crystalline silicon solar electricity
The preparation process of pond and polycrystalline solar cell complexity is cumbersome to cause their cost to remain high, amorphous silicon film solar battery
Photoelectric conversion efficiency increase with light application time and the problem of decaying is not properly settled always.The silicon of organic inorganic hybridization is different
Matter joint solar cell causes the extensive concern of people since preparation process is simple, but existing organic inorganic hybridization silicon
The photoelectric conversion efficiency of heterojunction solar battery is relatively low.
The content of the invention
The purpose of the present invention is overcome above-mentioned the deficiencies in the prior art, there is provided a kind of silicon-Spiro-OMeTAD hetero-junctions light
Lie prostrate battery and preparation method thereof.
To achieve the above object, the preparation side of a kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells proposed by the present invention
Method, comprises the following steps：(1) cleaning of n-type silicon substrate；(2) surface passivating treatment of n-type silicon substrate；(3)Spiro-OMeTAD
The preparation of layer：Contain zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets in the positive spin coating for the n-type silicon substrate that step (2) obtains
And the mixed solution of Spiro-OMeTAD, the rotating speed of spin coating is 2000-3000 revs/min, is then made annealing treatment, and is formed
It is Spiro-OMeTAD layers described；(4)Spiro-OMeTAD/PEDOT:The preparation of PSS composite beds：Spiro-OMeTAD layers described
Surface successively spin coating contain zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD mixed solution and
PEDOT:PSS solution, the speed of spin coating is 3500-4000 revs/min, is then made annealing treatment, and forms the Spiro-
OMeTAD/PEDOT:PSS composite beds；(5)PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:PSS is compound
Layer surface spin coating PEDOT：PSS solution, the speed of spin coating is 2000-2500 revs/min, is then made annealing treatment, and forms institute
State PEDOT:PSS layer；(6) preparation of front electrode；(7) preparation of backplate；Institute in wherein described step (3) and (4)
The concentration for stating zirconium diselenide nanometer sheet in mixed solution is 0.1-0.5mg/ml, and the concentration of two selenizing tantalum nanometer sheet nanometer sheets is
The concentration of 0.1-0.5mg/ml, Spiro-OMeTAD are 10-15mg/ml, the PEDOT in the step (4) and (5):PSS
PEDOT in solution:The concentration of PSS is 8-12mg/ml.
Preferably, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, second
It is cleaned by ultrasonic in alcohol, deionized water, is then dried up with nitrogen spare.
Preferably, the surface passivating treatment of n-type silicon substrate includes in the step (2)：First is carried out to n-type silicon substrate
Baseization processing, forms Si-CH3 keys to be passivated silicon face.
Preferably, the annealing temperature of the annealing in the step (3) is 100-110 DEG C and annealing time is
10-20 minutes；The annealing temperature of annealing in the step (4) is 90-100 DEG C, annealing time 5-10 minutes；The step
Suddenly the annealing temperature of the annealing in (5) is 110-120 DEG C, annealing time 10-20 minutes.
Preferably, the front electrode in the step (6) is silver-colored gate electrode, the thickness of the front electrode is
100-150 nanometers.
Preferably, the backplate in the step (7) is aluminium electrode, the thickness of the backplate is
200-300 nanometers.
Present invention also offers a kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, the silicon-Spiro-OMeTAD
Heterojunction photovoltaic cell is that a kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells to be formed are prepared using the above method.
The present invention has following advantages compared with prior art：
In silicon-Spiro-OMeTAD heterojunction photovoltaic cells of the present invention, contain zirconium diselenide in Spiro-OMeTAD layers
Nanometer sheet and two selenizing tantalum nanometer sheets, can adjust the contact performance between Si/Spiro-OMeTAD hetero-junctions, improve built-in electricity
, while improve Spiro-OMeTAD layers of electrical conductivity, easy to the separation and transmission of electron hole pair, improve silicon-Spiro-
The open-circuit voltage of OMeTAD heterojunction photovoltaic cells.
In Spiro-OMeTAD layers and PEDOT:There is one layer of Spiro-OMeTAD/PEDOT between PSS layer:PSS is compound
Layer, the composite bed contain the mixed of zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD by spin coating successively
Close solution and PEDOT:PSS solution, then common annealing are formed, zirconium diselenide nanometer sheet, two selenizing tantalums in annealing process
Nanometer sheet, Spiro-OMeTAD and PEDOT:PSS is mutually mixed the composite bed to form even compact, improves Spiro-
OMeTAD layers and PEDOT:Contact performance between PSS layer so that the hole in Spiro-OMeTAD layers can run through multiple
Close layer and be transmitted to PEDOT:PSS layer, and then collected by front electrode, improve silicon-Spiro-OMeTAD heterojunction photovoltaic cells
Short circuit current flow and fill factor, curve factor so that it can be with the carry out opto-electronic conversion of stability and high efficiency, by the specific work for optimizing each step
Skill parameter so that the photoelectric conversion efficiency of the silicon-Spiro-OMeTAD heterojunction photovoltaic cells is up to 13.7%.
Brief description of the drawings
Fig. 1 is the structure diagram of silicon-Spiro-OMeTAD heterojunction photovoltaic cells of the present invention.
Embodiment
A kind of preparation method for silicon-Spiro-OMeTAD heterojunction photovoltaic cells that the specific embodiment of the invention proposes, bag
Include following steps：(1) cleaning of n-type silicon substrate；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers
Prepare：The positive spin coating for the n-type silicon substrate that step (2) obtains contain zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and
The mixed solution of Spiro-OMeTAD, the rotating speed of spin coating is 2000-3000 revs/min, is then made annealing treatment, described in formation
Spiro-OMeTAD layers；(4)Spiro-OMeTAD/PEDOT:The preparation of PSS composite beds：In the Spiro-OMeTAD layer surfaces
Spin coating contains the mixed solution and PEDOT of zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD successively:
PSS solution, the speed of spin coating is 3500-4000 revs/min, is then made annealing treatment, and forms the Spiro-OMeTAD/
PEDOT:PSS composite beds；(5)PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:The compound layer surface rotations of PSS
Apply PEDOT：PSS solution, the speed of spin coating is 2000-2500 revs/min, is then made annealing treatment, forms the PEDOT:
PSS layer；(6) preparation of front electrode；(7) preparation of backplate；The mixing in wherein described step (3) and (4) is molten
The concentration of zirconium diselenide nanometer sheet is 0.1-0.5mg/ml in liquid, and the concentration of two selenizing tantalum nanometer sheet nanometer sheets is 0.1-0.5mg/
The concentration of ml, Spiro-OMeTAD are 10-15mg/ml, the PEDOT in the step (4) and (5):In PSS solution
PEDOT:The concentration of PSS is 8-12mg/ml.
Wherein, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, ethanol, go
It is cleaned by ultrasonic in ionized water, is then dried up with nitrogen spare.In the step (2) at the surface passivation of n-type silicon substrate
Reason includes：The processing that methylates is carried out to n-type silicon substrate, forms Si-CH3 keys to be passivated silicon face.Annealing in the step (3)
The annealing temperature of processing is 100-110 DEG C and annealing time is 10-20 minutes；Annealing in the step (4) is moved back
Fiery temperature is 90-100 DEG C, annealing time 5-10 minutes；The annealing temperature of annealing in the step (5) is 110-120
DEG C, annealing time 10-20 minutes.The front electrode in the step (6) is silver-colored gate electrode, the thickness of the front electrode
Spend for 100-150 nanometers.The backplate in the step (7) is aluminium electrode, and the thickness of the backplate is
200-300 nanometers.
As shown in Figure 1, silicon-Spiro-OMeTAD heterojunction photovoltaic cells that the present invention is prepared according to the above method, described
Silicon-Spiro-OMeTAD heterojunction photovoltaic cells from bottom to up include backplate 1, n-type silicon substrate 2, Spiro-OMeTAD layers
3、Spiro-OMeTAD/PEDOT:PSS composite beds 4, PEDOT:PSS layer 5 and front electrode 6.
Embodiment 1：
A kind of preparation method of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, comprises the following steps：(1) n-type silicon base
The cleaning at bottom；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers of preparation：In the n that step (2) obtains
The mixing that the positive spin coating of type silicon base contains zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD is molten
Liquid, the rotating speed of spin coating is 2500 revs/min, is then made annealing treatment, is formed Spiro-OMeTAD layers described；(4)Spiro-
OMeTAD/PEDOT:The preparation of PSS composite beds：Contain zirconium diselenide nanometer in the Spiro-OMeTAD layer surfaces successively spin coating
The mixed solution and PEDOT of piece, two selenizing tantalum nanometer sheets and Spiro-OMeTAD:PSS solution, the speed of spin coating are
3800 revs/min, then made annealing treatment, form the Spiro-OMeTAD/PEDOT:PSS composite beds；(5)PEDOT:
The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:The compound layer surface spin coating PEDOT of PSS：PSS solution, the speed of spin coating
Spend for 2300 revs/min, then made annealing treatment, form the PEDOT:PSS layer；(6) preparation of front electrode；(7) carry on the back
The preparation of face electrode；The concentration of zirconium diselenide nanometer sheet is in the mixed solution in wherein described step (3) and (4)
0.3mg/ml, the concentration of two selenizing tantalum nanometer sheet nanometer sheets are 0.3mg/ml, and the concentration of Spiro-OMeTAD is 12mg/ml, institute
State the PEDOT in step (4) and (5):PEDOT in PSS solution:The concentration of PSS is 10mg/ml.
Wherein, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, ethanol, go
It is cleaned by ultrasonic in ionized water, is then dried up with nitrogen spare.In the step (2) at the surface passivation of n-type silicon substrate
Reason includes：The processing that methylates is carried out to n-type silicon substrate, forms Si-CH3 keys to be passivated silicon face.Annealing in the step (3)
The annealing temperature of processing is 105 DEG C and annealing time is 15 minutes；The annealing temperature of annealing in the step (4) is
95 DEG C, annealing time 7 minutes；The annealing temperature of annealing in the step (5) is 115 DEG C, annealing time 15 minutes.
The front electrode in the step (6) is silver-colored gate electrode, and the thickness of the front electrode is 120 nanometers.In the step
(7) backplate in is aluminium electrode, and the thickness of the backplate is 270 nanometers.
The open-circuit voltage of silicon-Spiro-OMeTAD heterojunction photovoltaic cells prepared by the above method is 0.6V, short circuit current flow
For 30.5mA/cm2, fill factor, curve factor 0.75, photoelectric conversion efficiency 13.7%.
Embodiment 2
A kind of preparation method of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, comprises the following steps：(1) n-type silicon base
The cleaning at bottom；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers of preparation：In the n that step (2) obtains
The mixing that the positive spin coating of type silicon base contains zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD is molten
Liquid, the rotating speed of spin coating is 2000-3000 revs/min, is then made annealing treatment, is formed Spiro-OMeTAD layers described；(4)
Spiro-OMeTAD/PEDOT:The preparation of PSS composite beds：Contain two selenizings in the Spiro-OMeTAD layer surfaces successively spin coating
The mixed solution and PEDOT of zirconium nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD:PSS solution, the speed of spin coating
It is 3500 revs/min, is then made annealing treatment, forms the Spiro-OMeTAD/PEDOT:PSS composite beds；(5)
PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:The compound layer surface spin coating PEDOT of PSS：PSS solution, rotation
The speed of painting is 2000 revs/min, is then made annealing treatment, forms the PEDOT:PSS layer；(6) preparation of front electrode；
(7) preparation of backplate；The concentration of zirconium diselenide nanometer sheet in the mixed solution in wherein described step (3) and (4)
For 0.1mg/ml, the concentration of two selenizing tantalum nanometer sheet nanometer sheets is 0.1mg/ml, and the concentration of Spiro-OMeTAD is 10mg/ml,
The PEDOT in the step (4) and (5):PEDOT in PSS solution:The concentration of PSS is 8mg/ml.
Wherein, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, ethanol, go
It is cleaned by ultrasonic in ionized water, is then dried up with nitrogen spare.In the step (2) at the surface passivation of n-type silicon substrate
Reason includes：The processing that methylates is carried out to n-type silicon substrate, forms Si-CH3 keys to be passivated silicon face.Annealing in the step (3)
The annealing temperature of processing is 100 DEG C and annealing time is 10 minutes；The annealing temperature of annealing in the step (4) is
90 DEG C, annealing time 5 minutes；The annealing temperature of annealing in the step (5) is 110 DEG C, annealing time 20 minutes.
The front electrode in the step (6) is silver-colored gate electrode, and the thickness of the front electrode is 100 nanometers.In the step
(7) backplate in is aluminium electrode, and the thickness of the backplate is 200 nanometers.
The open-circuit voltage of silicon-Spiro-OMeTAD heterojunction photovoltaic cells prepared by the above method is 0.58V, short circuit electricity
Flow for 29mA/cm2, fill factor, curve factor 0.7, photoelectric conversion efficiency 11.8%.
Embodiment 3
A kind of preparation method of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, comprises the following steps：(1) n-type silicon base
The cleaning at bottom；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers of preparation：In the n that step (2) obtains
The mixing that the positive spin coating of type silicon base contains zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD is molten
Liquid, the rotating speed of spin coating is 2000-3000 revs/min, is then made annealing treatment, is formed Spiro-OMeTAD layers described；(4)
Spiro-OMeTAD/PEDOT:The preparation of PSS composite beds：Contain two selenizings in the Spiro-OMeTAD layer surfaces successively spin coating
The mixed solution and PEDOT of zirconium nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD:PSS solution, the speed of spin coating
It is 4000 revs/min, is then made annealing treatment, forms the Spiro-OMeTAD/PEDOT:PSS composite beds；(5)
PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:The compound layer surface spin coating PEDOT of PSS：PSS solution, rotation
The speed of painting is 2500 revs/min, is then made annealing treatment, forms the PEDOT:PSS layer；(6) preparation of front electrode；
(7) preparation of backplate；The concentration of zirconium diselenide nanometer sheet in the mixed solution in wherein described step (3) and (4)
For 0.5mg/ml, the concentration of two selenizing tantalum nanometer sheet nanometer sheets is 0.5mg/ml, and the concentration of Spiro-OMeTAD is 15mg/ml,
The PEDOT in the step (4) and (5):PEDOT in PSS solution:The concentration of PSS is 12mg/ml.
Wherein, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, ethanol, go
It is cleaned by ultrasonic in ionized water, is then dried up with nitrogen spare.In the step (2) at the surface passivation of n-type silicon substrate
Reason includes：The processing that methylates is carried out to n-type silicon substrate, forms Si-CH3 keys to be passivated silicon face.Annealing in the step (3)
The annealing temperature of processing is 110 DEG C and annealing time is 15 minutes；The annealing temperature of annealing in the step (4) is
100 DEG C, annealing time 10 minutes；The annealing temperature of annealing in the step (5) is 120 DEG C, annealing time 20 minutes.
The front electrode in the step (6) is silver-colored gate electrode, and the thickness of the front electrode is 150 nanometers.In the step
Suddenly the backplate in (7) is aluminium electrode, and the thickness of the backplate is 300 nanometers.
The open-circuit voltage of silicon-Spiro-OMeTAD heterojunction photovoltaic cells prepared by the above method is 0.57V, short circuit electricity
Flow for 28.5mA/cm2, fill factor, curve factor 0.67, photoelectric conversion efficiency 10.9%.
Comparative example：
As a comparison, the preparation method of a kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, comprises the following steps：
(1) cleaning of n-type silicon substrate；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers of preparation：In step
(2) the positive spin coating Spiro-OMeTAD solution of the n-type silicon substrate obtained, the rotating speed of spin coating is 2500 revs/min, is then carried out
Annealing, forms Spiro-OMeTAD layers described；(4)PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD layer surfaces
Spin coating PEDOT：PSS solution, the speed of spin coating is 2300 revs/min, is then made annealing treatment, forms the PEDOT:PSS
Layer；(5) preparation of front electrode；(6) preparation of backplate；Spiro-OMeTAD in wherein described Spiro-OMeTAD solution
Concentration be 12mg/ml, the PEDOT:PEDOT in PSS solution:The concentration of PSS is 10mg/ml.
Wherein, the cleaning of n-type silicon substrate includes in the step (1)：By n-type silicon substrate successively in acetone, ethanol, go
It is cleaned by ultrasonic in ionized water, is then dried up with nitrogen spare.In the step (2) at the surface passivation of n-type silicon substrate
Reason includes：The processing that methylates is carried out to n-type silicon substrate, forms Si-CH3 keys to be passivated silicon face.Annealing in the step (3)
The annealing temperature of processing is 105 DEG C and annealing time is 15 minutes；The annealing temperature of annealing in the step (4) is
115 DEG C, annealing time 25 minutes.The front electrode in the step (5) is silver-colored gate electrode, the thickness of the front electrode
Spend for 120 nanometers.The backplate in the step (6) is aluminium electrode, and the thickness of the backplate is received for 270
Rice.
The open-circuit voltage of the silicon-Spiro-OMeTAD heterojunction photovoltaic cells is 0.53V, short circuit current flow 24.6mA/
cm2, fill factor, curve factor 0.55, photoelectric conversion efficiency 7.2%.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (7)
- A kind of 1. preparation method of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that：Comprise the following steps：(1) cleaning of n-type silicon substrate；(2) surface passivating treatment of n-type silicon substrate；(3) Spiro-OMeTAD layers of preparation：Contain zirconium diselenide in the positive spin coating for the n-type silicon substrate that step (2) obtains to receive The mixed solution of rice piece, two selenizing tantalum nanometer sheets and Spiro-OMeTAD, the rotating speed of spin coating is 2000-3000 revs/min, so After made annealing treatment, formed Spiro-OMeTAD layers described；(4)Spiro-OMeTAD/PEDOT:The preparation of PSS composite beds：Contain in the Spiro-OMeTAD layer surfaces successively spin coating There are the mixed solution and PEDOT of zirconium diselenide nanometer sheet, two selenizing tantalum nanometer sheets and Spiro-OMeTAD:PSS solution, rotation The speed of painting is 3500-4000 revs/min, is then made annealing treatment, and forms the Spiro-OMeTAD/PEDOT:PSS Composite bed；(5)PEDOT:The preparation of PSS layer：In the Spiro-OMeTAD/PEDOT:The compound layer surface spin coating PEDOT of PSS：PSS Solution, the speed of spin coating is 2000-2500 revs/min, is then made annealing treatment, forms the PEDOT:PSS layer；(6) preparation of front electrode；(7) preparation of backplate；The concentration of zirconium diselenide nanometer sheet is 0.1-0.5mg/ml in the mixed solution in wherein described step (3) and (4), The concentration of two selenizing tantalum nanometer sheet nanometer sheets is 0.1-0.5mg/ml, and the concentration of Spiro-OMeTAD is 10-15mg/ml, described The PEDOT in step (4) and (5):PEDOT in PSS solution:The concentration of PSS is 8-12mg/ml.
- 2. the preparation method of silicon according to claim 1-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that： The cleaning of n-type silicon substrate includes in the step (1)：N-type silicon substrate is carried out in acetone, ethanol, deionized water successively It is cleaned by ultrasonic, is then dried up with nitrogen spare.
- 3. the preparation method of silicon according to claim 1-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that： The surface passivating treatment of n-type silicon substrate includes in the step (2)：The processing that methylates is carried out to n-type silicon substrate, forms Si- CH3 keys are to be passivated silicon face.
- 4. the preparation method of silicon according to claim 1-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that： The annealing temperature of annealing in the step (3) is 100-110 DEG C and annealing time is 10-20 minutes；The step (4) annealing temperature of the annealing in is 90-100 DEG C, annealing time 5-10 minutes；Annealing in the step (5) Annealing temperature be 110-120 DEG C, annealing time 10-20 minutes.
- 5. the preparation method of silicon according to claim 1-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that： The front electrode in the step (6) is silver-colored gate electrode, and the thickness of the front electrode is 100-150 nanometers.
- 6. the preparation method of silicon according to claim 1-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that： The backplate in the step (7) is aluminium electrode, and the thickness of the backplate is 200-300 nanometers.
- 7. a kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells, it is characterised in that the silicon-Spiro-OMeTAD is heterogeneous Junction photovoltaic battery is to prepare the silicon to be formed-Spiro-OMeTAD hetero-junctions light using claim 1-6 any one of them methods Lie prostrate battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249126.2A CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249126.2A CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108023021A true CN108023021A (en) | 2018-05-11 |
| CN108023021B CN108023021B (en) | 2020-11-24 |
Family
ID=62078282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711249126.2A Active CN108023021B (en) | 2017-12-01 | 2017-12-01 | silicon-Spiro-OMeTAD heterojunction photovoltaic cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108023021B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598267A (en) * | 2018-06-08 | 2018-09-28 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction solar cell and preparation method thereof |
| CN108847449A (en) * | 2018-06-21 | 2018-11-20 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction photovoltaic cell and preparation method thereof |
| CN109326719A (en) * | 2018-09-28 | 2019-02-12 | 苏州钱正科技咨询有限公司 | A kind of heterojunction solar battery and preparation method thereof based on n type single crystal silicon substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876595A (en) * | 2017-04-21 | 2017-06-20 | 江苏天雄电气自动化有限公司 | A kind of silicon heterogenous solar cell of N-type and preparation method thereof |
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
-
2017
- 2017-12-01 CN CN201711249126.2A patent/CN108023021B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017105247A1 (en) * | 2015-12-18 | 2017-06-22 | Stichting Energieonderzoek Centrum Nederland | Tandem solar cell and method for manufacturing such a solar cell |
| CN106876595A (en) * | 2017-04-21 | 2017-06-20 | 江苏天雄电气自动化有限公司 | A kind of silicon heterogenous solar cell of N-type and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 申小娟: ""基于硅纳米线阵列的有机/无机杂化光伏电池的制备及性能表征研究 "", 《中国博士学位论文全文数据库(电子期刊)》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598267A (en) * | 2018-06-08 | 2018-09-28 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction solar cell and preparation method thereof |
| CN108847449A (en) * | 2018-06-21 | 2018-11-20 | 苏州宝澜环保科技有限公司 | A kind of novel heterojunction photovoltaic cell and preparation method thereof |
| CN108847449B (en) * | 2018-06-21 | 2021-11-02 | 江苏日御光伏新材料科技有限公司 | Novel heterojunction photovoltaic cell and preparation method thereof |
| CN109326719A (en) * | 2018-09-28 | 2019-02-12 | 苏州钱正科技咨询有限公司 | A kind of heterojunction solar battery and preparation method thereof based on n type single crystal silicon substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108023021B (en) | 2020-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102299206B (en) | Heterojunction solar cell and manufacturing method thereof | |
| CN104993059B (en) | A kind of silicon substrate perovskite heterojunction solar battery and preparation method thereof | |
| WO2008086709A1 (en) | Carbon nanotube film based solar cell and fabricating method thereof | |
| CN106558650A (en) | A kind of preparation method of flexible copper indium gallium selenide/perovskite lamination solar cell | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| CN109509807A (en) | Emitter structure of silicon/crystalline silicon heterojunction solar battery and preparation method thereof | |
| CN107369764A (en) | A kind of perovskite solar cell and preparation method for adulterating lead acetate trihydrate | |
| CN107895760A (en) | A kind of silicon nanowire array heterojunction solar battery and preparation method thereof | |
| CN106450001A (en) | Composite laminated perovskite solar cell and manufacturing method therefor | |
| CN108023021A (en) | A kind of silicon-Spiro-OMeTAD heterojunction photovoltaic cells and preparation method thereof | |
| CN109449227A (en) | Silicon/crystalline silicon heterojunction solar battery electrode structure of lamination intrinsic layer and preparation method thereof | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| WO2023115870A1 (en) | Pn heterojunction antimony selenide/perovskite solar cell, and preparation method therefor | |
| CN108258124A (en) | A kind of heterojunction photovoltaic cell and preparation method thereof | |
| CN104241411A (en) | Efficient cadmium telluride nanocrystalline Schottky junction solar cell with modified anode interface and preparing method thereof | |
| CN101587916A (en) | Based on Si nano-wire array solar cell and manufacture method thereof | |
| Zhou et al. | An investigation on a crystalline-silicon solar cell with black silicon layer at the rear | |
| CN106876595A (en) | A kind of silicon heterogenous solar cell of N-type and preparation method thereof | |
| CN107706248A (en) | A kind of silicon nanostructure heterojunction solar battery and preparation method thereof | |
| CN101257094A (en) | Silicon nanometer wire solar cell apparatus | |
| Chen et al. | Efficiency enhancement of silicon nanowire solar cells by using UV/Ozone treatments and micro-grid electrodes | |
| CN110416345A (en) | Heterojunction solar battery structure of the double-deck amorphous silicon intrinsic layer and preparation method thereof | |
| CN111180588B (en) | Thick-film organic solar cell based on continuous blade coating double-body heterojunction and preparation method thereof | |
| CN108336181B (en) | A kind of solar battery and preparation method thereof | |
| CN203883017U (en) | Perovskite solar cell with hole transport layer made of zinc telluride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201110 Address after: 221000 Wujiang Road, industrial park, Yitang Town, Pizhou City, Xuzhou City, Jiangsu Province Applicant after: Xuzhou jialitai New Material Technology Co., Ltd Address before: No. 1701 Binhe Road, Suzhou High-tech Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU BAOLAN ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |