CN107946470A - A kind of heterojunction solar battery and preparation method thereof - Google Patents
A kind of heterojunction solar battery and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of heterojunction solar battery and preparation method thereof, to improve the photoelectric conversion efficiency of solar cell.The production method of heterojunction photovoltaic cell includes：The cleaning of n-type silicon chip；Silicon nanowire array is prepared on the surface of n-type silicon chip；Processing is passivated to n-type silicon chip and the respective surface of silicon nanowires；The preparation of silicon nanowires/Spiro OMeTAD composite reactive films；PEDOT:The preparation of PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers；The preparation of polyvinyl alcohol organic passivation layer；The preparation of transparent conductive layer；The preparation of positive silver gate electrode；The preparation of backplate.
Description
Technical field
The present invention relates to photovoltaic cell technical field, more particularly to a kind of heterojunction solar battery and its preparation side
Method.
Background technology
Inorganic solar cell can not be applied on a large scale because its cost is prohibitively expensive.Organic solar batteries by
It is hopeful to reduce the production cost of solar cell in the advantage such as its material is cheap, annealing temperature is low, manufacturing process is simple, so
And the efficiency of organic solar batteries is far below inorganic solar cell.Therefore based on inorganic and organic semiconducting materials organic
Inorganic hybridization solar cell increasingly receives the favor of people, it, which is provided, a kind of can not only simplify manufacturing step but also can be with
Reduce the production technology of cost.Reduce the photoelectric conversion efficiency of the reflective raising solar cell of incident light on battery smooth surface
In want means, and can effectively reduce light reflection in the silicon nanowire array that silicon chip surface is formed, and cause the wide of people
General concern.
The content of the invention
The purpose of the present invention is overcome above-mentioned the deficiencies in the prior art, there is provided a kind of heterojunction solar battery.
To achieve the above object, the preparation method of a kind of heterojunction solar battery proposed by the present invention, including following step
Suddenly：(1) cleaning of n-type silicon chip：N-type silicon chip is cleaned by ultrasonic 20-40 minutes in acetone, ethanol, deionized water successively, is used in combination
Nitrogen dries up, and then the n-type silicon chip of drying is placed in the concentrated sulfuric acid/hydrogen peroxide mixed solution, 40- is heat-treated at 110-120 DEG C
60 minutes, then with deionized water rinsing n-type silicon chip, the natural oxygen on the surface of the n-type silicon chip is finally removed using hydrofluoric acid
SiClx layer；(2) silicon nanowire array is prepared on the surface of n-type silicon chip：The silicon chip that step 1 is obtained is placed in silver nitrate/hydrofluoric acid
In mixed solution, wherein the molar concentration of silver nitrate is 0.02mol/l, and the molar concentration of hydrofluoric acid is 4.8mol/l, at room temperature
Reaction 20-40 minutes, then takes out n-type silicon chip, after deionization rinses, is soaked 30-70 minutes in salpeter solution, to remove n
The Argent grain of type silicon chip surface, then with deionized water cleaning silicon chip, and is dried up with spare with nitrogen；(3) to n-type silicon chip and
The respective surface of silicon nanowires is passivated processing：Step 2 is obtained n-type silicon chip to soak in a solution of hydrofluoric acid 5-20 minutes,
And dried up with nitrogen, it is then immersed in the chlorobenzene solution of saturation phosphorus pentachloride, is heat-treated at 110 DEG C 40-60 minutes, then will
N-type silicon chip is taken out from the chlorobenzene solution of saturation phosphorus pentachloride and is cleaned successively in chlorobenzene and tetrahydrofuran, then by n-type silicon
Piece is positioned in the tetrahydrofuran solution of methyl-magnesium-chloride, to form silicon-methyl passivation layer on n-type silicon chip surface；(4) silicon nanometer
The preparation of line/Spiro-OMeTAD composite reactive films：Contain n-type silicon nano wire in the positive spin coating for the n-type silicon chip that step 3 obtains
Spiro-OMeTAD solution, rotating speed be 1000-2000 revs/min, spin-coating time be 2-5 minutes, at room temperature in nitrogen atmosphere
When middle placement 5-12 is small, silicon nanowires/Spiro-OMeTAD composite reactive films are formed；(5)PEDOT:PSS/ silver nano-grains/more
The preparation of wall carbon nano tube composite conductive layers：Contain silver in silicon nanowires/Spiro-OMeTAD composite reactive film surface spin coatings and receive
The PEDOT of rice grain and multi-walled carbon nanotube:PSS solution；Rotating speed is 3000-4000 revs/min, and spin-coating time is 4-6 minutes,
It is subsequently placed in nitrogen atmosphere and is made annealing treatment, degenerate temperature is 110-120 DEG C, and annealing time is 5-15 minutes, is formed and caused
Close PEDOT:PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers；(6) preparation of polyvinyl alcohol organic passivation layer：
In the n-type silicon chip front spin coating poly-vinyl alcohol solution, it is subsequently placed in nitrogen atmosphere and is made annealing treatment, degenerate temperature is
90-110 DEG C, annealing time is 5-10 minutes, to form polyvinyl alcohol organic passivation layer；(7) preparation of transparent conductive layer：
In the front for the n-type silicon chip that step 6 obtains transparent conductive layer is formed using magnetron sputtering technique；(8) front silver-colored gate electrode
Prepare：Thermal evaporation deposition is utilized under vacuum conditions, in the silver-colored gate electrode in n-type silicon chip front evaporation front；(9) system of backplate
It is standby：Thermal evaporation deposition is utilized under vacuum conditions, and titanium palladium-silver backplate is deposited at the n-type silicon chip back side.
Preferably, in the step 4, the length of the n-type silicon nano wire is 200-300nm, the n-type silicon nanometer
A diameter of 10-20nm of line, the thickness of the silicon nanowires/Spiro-OMeTAD composite reactive films is 20-60 nanometers.
Preferably, the preparation method of the Spiro-OMeTAD solution containing n-type silicon nano wire is：Carved using dry method
Erosion in the upper surface of n-type silicon substrate prepares n-type silicon nano-wire array, then using blade by n-type silicon nano-wire array scrape into
In Spiro-OMeTAD solution, to form the Spiro-OMeTAD solution containing n-type silicon nano wire.
Preferably, the particle diameter of the silver nano-grain is 10-20 nanometers, the PEDOT:PSS/ silver nano-grains/more
The thickness of wall carbon nano tube composite conductive layers is 30-60nm.
Preferably, the thickness of the polyvinyl alcohol organic passivation layer is 1-2 nanometers.
Preferably, the thickness of the transparent conductive layer is 50-150nm, the thickness of the silver-colored gate electrode in front is
50-100 nanometers.
Preferably, the thickness of the titanium palladium-silver backplate is 100-200nm.
Present invention also offers a kind of heterojunction solar battery, the heterojunction solar battery is using the above method
Prepare a kind of heterojunction solar battery formed.
The present invention has following advantages compared with prior art：
(1) present invention reduces light reflection, while silicon nanowires and silicon nanometer using silicon nanowire array as light absorbing layer
Line/Spiro-OMeTAD composite reactives film forms radial direction hetero-junctions so that the increase of heterojunction boundary area, improves electron hole
To separation and efficiency of transmission, be effectively improved the transfer efficiency of solar cell.
(2) present invention has silicon nanowires/Spiro-OMeTAD composite reactive films, and a part of Spiro-OMeTAD receives with silicon
While nanowire arrays form hetero-junctions, another part Spiro-OMeTAD and silicon nanowires/Spiro-OMeTAD composite reactives
N-type silicon nano wire in film forms the hetero-junctions of high quality, effectively increases silicon and the contact area of Spiro-OMeTAD, at the same time
Due to the random alignment of the n-type silicon nano wire in silicon nanowires/Spiro-OMeTAD composite reactive films, electronics can effectively be passed
Silicon nanowire array is transported to, and then improves its photoelectric conversion efficiency.
(3) present invention uses PEDOT:PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers and transparent are conductive
The bilayer conductive Rotating fields of layer, and the polyvinyl alcohol organic passivation layer with tunnelling is formed between, it can improve
The efficiency of transmission of carrier, while by PEDOT:Silver nano-grain and multi-walled carbon nanotube are added in PSS, reduces contact electricity
Resistance, improves the conductivity of composite conductive layers, is conducive to the transmission of carrier in battery, and then improves the open circuit electricity of solar cell
Pressure and fill factor, curve factor.
(4) present invention prepares heterojunction solar battery using the simple, process of low temperature, effectively reduces production cost
Obtain the heterojunction solar battery of a high-photoelectric transformation efficiency at the same time.
Brief description of the drawings
Fig. 1 is the structure diagram of the heterojunction solar battery of the present invention.
Embodiment
A kind of preparation method for heterojunction solar battery that the specific embodiment of the invention proposes, comprises the following steps：(1)
The cleaning of n-type silicon chip：N-type silicon chip is cleaned by ultrasonic 20-40 minutes in acetone, ethanol, deionized water successively, and is blown with nitrogen
It is dry, then the n-type silicon chip of drying is placed in the concentrated sulfuric acid/hydrogen peroxide mixed solution, is heat-treated 40-60 minutes at 110-120 DEG C,
Then deionized water rinsing n-type silicon chip is used, the autoxidation silicon layer on the surface of the n-type silicon chip is finally removed using hydrofluoric acid；
(2) silicon nanowire array is prepared on the surface of n-type silicon chip：The silicon chip that step 1 is obtained is placed in silver nitrate/hydrofluoric acid mixed solution
In, wherein the molar concentration of silver nitrate is 0.02mol/l, and the molar concentration of hydrofluoric acid is 4.8mol/l, reacts 20-40 at room temperature
Minute, n-type silicon chip is then taken out, after deionization rinses, is soaked 30-70 minutes in salpeter solution, to remove n-type silicon chip surface
Argent grain, then with deionized water cleaning silicon chip, and dried up with nitrogen with spare；(3) it is each to n-type silicon chip and silicon nanowires
From surface be passivated processing：Step 2 is obtained n-type silicon chip to soak in a solution of hydrofluoric acid 5-20 minutes, and is blown with nitrogen
It is dry, be then immersed in the chlorobenzene solution of saturation phosphorus pentachloride, be heat-treated 40-60 minutes at 110 DEG C, then by n-type silicon chip from
Take out in the chlorobenzene solution of saturation phosphorus pentachloride and cleaned successively in chlorobenzene and tetrahydrofuran, be then positioned over n-type silicon chip
In the tetrahydrofuran solution of methyl-magnesium-chloride, to form silicon-methyl passivation layer on n-type silicon chip surface；(4) silicon nanowires/
The preparation of Spiro-OMeTAD composite reactive films：Contain n-type silicon nano wire in the positive spin coating for the n-type silicon chip that step 3 obtains
SPIRO-OMETAD solution, rotating speed are 1000-2000 revs/min, and spin-coating time is 2-5 minutes, at room temperature in nitrogen atmosphere
When placement 5-12 is small, silicon nanowires/SPIRO-OMETAD composite reactive films are formed；(5)PEDOT:PSS/ silver nano-grains/multi wall
The preparation of carbon nanotubes composite conductive layers：Contain silver nanoparticle in silicon nanowires/SPIRO-OMETAD composite reactive film surface spin coatings
The PEDOT of particle and multi-walled carbon nanotube:PSS solution；Rotating speed is 3000-4000 revs/min, and spin-coating time is 4-6 minutes, so
It is placed in nitrogen atmosphere and is made annealing treatment, degenerate temperature is 110-120 DEG C, and annealing time is 5-15 minutes, is formed fine and close
PEDOT:PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers；(6) preparation of polyvinyl alcohol organic passivation layer：
The n-type silicon chip front spin coating poly-vinyl alcohol solution, is subsequently placed in nitrogen atmosphere and is made annealing treatment, degenerate temperature 90-
110 DEG C, annealing time is 5-10 minutes, to form polyvinyl alcohol organic passivation layer；(7) preparation of transparent conductive layer：In step
The front of rapid 6 obtained n-type silicon chips forms transparent conductive layer using magnetron sputtering technique；(8) system of the silver-colored gate electrode in front
It is standby：Thermal evaporation deposition is utilized under vacuum conditions, in the silver-colored gate electrode in n-type silicon chip front evaporation front；(9) preparation of backplate：
Thermal evaporation deposition is utilized under vacuum conditions, and titanium palladium-silver backplate is deposited at the n-type silicon chip back side.
Wherein, in the step 4, the length of the n-type silicon nano wire is 200-300nm, the n-type silicon nano wire
A diameter of 10-20nm, the thickness of the silicon nanowires/SPIRO-OMETAD composite reactive films is 20-60 nanometers.It is described to contain n
The preparation method of the SPIRO-OMETAD solution of type silicon nanowires is：N is prepared using the upper surface for being dry-etched in n-type silicon substrate
Type silicon nanowire array, is then scraped n-type silicon nano-wire array in SPIRO-OMETAD solution using blade, with described in formation
SPIRO-OMETAD solution containing n-type silicon nano wire.The particle diameter of the silver nano-grain is 10-20 nanometers, the PEDOT:
The thickness of PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers is 30-60nm.The polyvinyl alcohol organic passivation layer
Thickness is 1-2 nanometers.The thickness of the transparent conductive layer is 50-150nm, and the thickness of the silver-colored gate electrode in front is 50-
100 nanometers.The thickness of the titanium palladium-silver backplate is 100-200nm.
As shown in Figure 1, the heterojunction solar battery that the present invention is prepared according to the above method, the heterojunction solar electricity
Pond from bottom to up include titanium palladium-silver backplate 9, n-type silicon chip 1, silicon nanowire array 2, silicon-methyl passivation layer 3, silicon nanowires/
SPIRO-OMETAD composite reactives film 4, PEDOT:PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers 5, polyvinyl alcohol
Organic passivation layer 6, the silver-colored gate electrode 8 of transparent conductive layer 7 and front.
Embodiment 1：
A kind of preparation method of heterojunction solar battery, comprises the following steps：(1) cleaning of n-type silicon chip：By n-type silicon
Piece is cleaned by ultrasonic 30 minutes in acetone, ethanol, deionized water successively, and is dried up with nitrogen, then puts the n-type silicon chip of drying
In the concentrated sulfuric acid/hydrogen peroxide mixed solution, 50 minutes are heat-treated at 110 DEG C, then with deionized water rinsing n-type silicon chip, finally
The autoxidation silicon layer on the surface of the n-type silicon chip is removed using hydrofluoric acid；(2) silicon nanowires is prepared on the surface of n-type silicon chip
Array：The silicon chip that step 1 is obtained is placed in silver nitrate/hydrofluoric acid mixed solution, and the molar concentration of wherein silver nitrate is
0.02mol/l, the molar concentration of hydrofluoric acid is 4.8mol/l, reacts 30 minutes at room temperature, then takes out n-type silicon chip, deionization
After flushing, soaked 40 minutes in salpeter solution, to remove the Argent grain on n-type silicon chip surface, then clean silicon with deionized water
Piece, and dried up with nitrogen with spare；(3) processing is passivated to n-type silicon chip and the respective surface of silicon nanowires：By step 2
Obtain n-type silicon chip to soak in a solution of hydrofluoric acid 10 minutes, and dried up with nitrogen, the chlorobenzene for being then immersed in saturation phosphorus pentachloride is molten
In liquid, 50 minutes are heat-treated at 110 DEG C, then take out from the chlorobenzene solution of saturation phosphorus pentachloride n-type silicon chip and successively
Clean in chlorobenzene and tetrahydrofuran, then n-type silicon chip is positioned in the tetrahydrofuran solution of methyl-magnesium-chloride, with N-shaped
Silicon chip surface forms silicon-methyl passivation layer；(4) preparation of silicon nanowires/SPIRO-OMETAD composite reactive films：Obtained in step 3
To the positive spin coating of n-type silicon chip contain the SPIRO-OMETAD solution of n-type silicon nano wire, rotating speed is 1000 revs/min, spin coating
Time is 5 minutes, when placement 8 is small in nitrogen atmosphere at room temperature, forms silicon nanowires/SPIRO-OMETAD composite reactive films；
(5)PEDOT:The preparation of PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers：In silicon nanowires/SPIRO-OMETAD
Composite reactive film surface spin coating contains the PEDOT of silver nano-grain and multi-walled carbon nanotube:PSS solution；Rotating speed is 3500 revs/min
Clock, spin-coating time are 5 minutes, are subsequently placed in nitrogen atmosphere and are made annealing treatment, and degenerate temperature is 120 DEG C, and annealing time is
10 minutes, form the PEDOT of densification:PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers；(6) polyvinyl alcohol is organic
The preparation of passivation layer：In the n-type silicon chip front spin coating poly-vinyl alcohol solution, it is subsequently placed in nitrogen atmosphere and carries out at annealing
Reason, degenerate temperature are 100 DEG C, and annealing time is 8 minutes, to form polyvinyl alcohol organic passivation layer；(7) transparent conductive layer
Preparation：In the front for the n-type silicon chip that step 6 obtains transparent conductive layer is formed using magnetron sputtering technique；(8) front silver
The preparation of gate electrode：Thermal evaporation deposition is utilized under vacuum conditions, in the silver-colored gate electrode in n-type silicon chip front evaporation front；(9) back side electricity
The preparation of pole：Thermal evaporation deposition is utilized under vacuum conditions, and titanium palladium-silver backplate is deposited at the n-type silicon chip back side.
Wherein, in the step 4, the length of the n-type silicon nano wire is 200nm, the diameter of the n-type silicon nano wire
For 10nm, the thickness of the silicon nanowires/SPIRO-OMETAD composite reactive films is 50 nanometers.It is described to contain n-type silicon nano wire
The preparation method of SPIRO-OMETAD solution be：N-type silicon nano wire is prepared using the upper surface for being dry-etched in n-type silicon substrate
Array, is then scraped n-type silicon nano-wire array in SPIRO-OMETAD solution using blade, to contain n-type silicon described in formation
The SPIRO-OMETAD solution of nano wire.The particle diameter of the silver nano-grain is 20 nanometers, the PEDOT:PSS/ silver nanoparticles
The thickness of grain/multi-walled carbon nanotube composite conductive layers is 50nm.The thickness of the polyvinyl alcohol organic passivation layer is 2 nanometers.Institute
The thickness for stating transparent conductive layer is 150nm, and the thickness of the silver-colored gate electrode in front is 90 nanometers.The titanium palladium-silver back side electricity
The thickness of pole is 150nm.
Heterojunction photovoltaic cell based on silicon nanowire array prepared by the above method, by matching somebody with somebody cooperation between each layer
With the open-circuit voltage for being somebody's turn to do the heterojunction photovoltaic cell based on silicon nanowire array is 0.55V, short circuit current flow 37.5mA/cm2,
Fill factor, curve factor is 0.76, photoelectric conversion efficiency 15.67%.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
- A kind of 1. preparation method of heterojunction solar battery, it is characterised in that：Comprise the following steps：（1）The cleaning of n-type silicon chip：N-type silicon chip is cleaned by ultrasonic 20-40 minutes in acetone, ethanol, deionized water successively, and Dried up with nitrogen, then the n-type silicon chip of drying is placed in the concentrated sulfuric acid/hydrogen peroxide mixed solution, be heat-treated at 110-120 DEG C 40-60 minutes, then with deionized water rinsing n-type silicon chip, the nature on the surface of the n-type silicon chip is finally removed using hydrofluoric acid Silicon oxide layer；（2）Silicon nanowire array is prepared on the surface of n-type silicon chip：The silicon chip that step 1 is obtained is placed in silver nitrate/hydrofluoric acid mixing In solution, wherein the molar concentration of silver nitrate is 0.02mol/l, and the molar concentration of hydrofluoric acid is 4.8mol/l, is reacted at room temperature 20-40 minutes, n-type silicon chip is then taken out, after deionization rinses, is soaked 30-70 minutes in salpeter solution, to remove n-type silicon The Argent grain on piece surface, then with deionized water cleaning silicon chip, and is dried up with spare with nitrogen；（3）Processing is passivated to n-type silicon chip and the respective surface of silicon nanowires：Step 2 is obtained into n-type silicon chip in hydrofluoric acid Soak 5-20 minutes in solution, and dried up with nitrogen, is then immersed in the chlorobenzene solution of saturation phosphorus pentachloride, it is hot at 110 DEG C Processing 40-60 minutes, then takes out n-type silicon chip and successively in chlorobenzene and tetrahydrochysene furan from the chlorobenzene solution of saturation phosphorus pentachloride Mutter middle cleaning, then n-type silicon chip be positioned in the tetrahydrofuran solution of methyl-magnesium-chloride, with formed on n-type silicon chip surface silicon- Methyl passivation layer；（4）The preparation of silicon nanowires/Spiro-OMeTAD composite reactive films：Contain in the positive spin coating for the n-type silicon chip that step 3 obtains There is the Spiro-OMeTAD solution of n-type silicon nano wire, rotating speed is 1000-2000 revs/min, and spin-coating time is 2-5 minutes, room temperature Under in nitrogen atmosphere place 5-12 it is small when, formed silicon nanowires/Spiro-OMeTAD composite reactive films；（5）PEDOT:The preparation of PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers：In silicon nanowires/Spiro- OMeTAD composite reactive film surface spin coatings contain the PEDOT of silver nano-grain and multi-walled carbon nanotube:PSS solution；Rotating speed is 3000-4000 revs/min, spin-coating time is 4-6 minutes, is subsequently placed in nitrogen atmosphere and is made annealing treatment, degenerate temperature is 110-120 DEG C, annealing time is 5-15 minutes, forms the PEDOT of densification:PSS/ silver nano-grains/multi-walled carbon nanotube is compound Conductive layer；（6）The preparation of polyvinyl alcohol organic passivation layer：In the n-type silicon chip front spin coating poly-vinyl alcohol solution, nitrogen is subsequently placed in Atmosphere is made annealing treatment in enclosing, and degenerate temperature is 90-110 DEG C, and annealing time is 5-10 minutes, organic to form polyvinyl alcohol Passivation layer；（7）The preparation of transparent conductive layer：In the front for the n-type silicon chip that step 6 obtains ITO is formed using magnetron sputtering technique Transparency conducting layer；（8）The preparation of positive silver gate electrode：Thermal evaporation deposition is utilized under vacuum conditions, in the silver-colored grid in n-type silicon chip front evaporation front Electrode；（9）The preparation of backplate：Thermal evaporation deposition is utilized under vacuum conditions, in n-type silicon chip back side evaporation titanium palladium-silver back side electricity Pole.
- 2. the preparation method of heterojunction solar battery according to claim 1, it is characterised in that：In the step 4, The length of the n-type silicon nano wire is 200-300 nm, a diameter of 10-20nm of the n-type silicon nano wire, the silicon nanometer The thickness of line/Spiro-OMeTAD composite reactive films is 20-60 nanometers.
- 3. the preparation method of heterojunction solar battery according to claim 2, it is characterised in that：It is described to contain n-type silicon The preparation method of the Spiro-OMeTAD solution of nano wire is：N-type silicon is prepared using the upper surface for being dry-etched in n-type silicon substrate Nano-wire array, is then scraped n-type silicon nano-wire array in Spiro-OMeTAD solution using blade, to contain described in formation The Spiro-OMeTAD solution of n-type silicon nano wire.
- 4. the preparation method of heterojunction solar battery according to claim 1, it is characterised in that：The silver nano-grain Particle diameter be 10-20 nanometers, the PEDOT:The thickness of PSS/ silver nano-grains/multi-walled carbon nanotube composite conductive layers is 30- 60nm。
- 5. the preparation method of the heterojunction photovoltaic cell according to claim 1 based on silicon nanowire array, its feature exist In：The thickness of the polyvinyl alcohol organic passivation layer is 1-2 nanometers.
- 6. the preparation method of heterojunction solar battery according to claim 1, it is characterised in that：The transparent is led The thickness of electric layer is 50-150nm, and the thickness of the silver-colored gate electrode in front is 50-100 nanometers.
- 7. the preparation method of heterojunction solar battery according to claim 1, it is characterised in that：The titanium palladium-silver back side The thickness of electrode is 100-200nm.
- 8. a kind of heterojunction solar battery, it is characterised in that the heterojunction solar battery is to be appointed using claim 1-7 Method described in one prepares the heterojunction solar battery to be formed.
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Cited By (10)
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| CN108461580A (en) * | 2018-05-04 | 2018-08-28 | 苏州宝澜环保科技有限公司 | A kind of silicon solar cell and preparation method thereof |
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| CN108832007A (en) * | 2018-07-04 | 2018-11-16 | 河南师范大学 | A kind of preparation method of perovskite and semi-conductor type silicon hybrid solar cell |
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| CN110668425A (en) * | 2019-10-12 | 2020-01-10 | 厦门大学 | Flexible lithium ion battery silicon-carbon composite negative electrode material and preparation method thereof |
| CN110668425B (en) * | 2019-10-12 | 2021-06-11 | 厦门大学 | Flexible lithium ion battery silicon-carbon composite negative electrode material and preparation method thereof |
| CN110993794A (en) * | 2019-11-22 | 2020-04-10 | 徐州吴瑞信息科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN110931641A (en) * | 2019-11-22 | 2020-03-27 | 徐州吴瑞信息科技有限公司 | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof |
| CN110993794B (en) * | 2019-11-22 | 2023-09-05 | 江苏海钜星新能源科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN110931641B (en) * | 2019-11-22 | 2024-01-02 | 山西晋开电力科技有限公司 | Silicon-based organic-inorganic hybrid solar cell and preparation method thereof |
| CN111029471A (en) * | 2019-12-05 | 2020-04-17 | 徐州吴瑞信息科技有限公司 | Solar cell and preparation method thereof |
| CN111029471B (en) * | 2019-12-05 | 2023-10-13 | 和光同程光伏科技(宜宾)有限公司 | Solar cell and preparation method thereof |
| CN111540832A (en) * | 2020-05-27 | 2020-08-14 | 扬州大学 | Silicon nanowire composite CsPbBr3Quantum dot organic hybrid solar cell |
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