CN108831955A - A kind of silicon solar cell and preparation method thereof - Google Patents
A kind of silicon solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN108831955A CN108831955A CN201810586050.0A CN201810586050A CN108831955A CN 108831955 A CN108831955 A CN 108831955A CN 201810586050 A CN201810586050 A CN 201810586050A CN 108831955 A CN108831955 A CN 108831955A
- Authority
- CN
- China
- Prior art keywords
- preparation
- type silicon
- silicon chip
- spin coating
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 145
- 239000010703 silicon Substances 0.000 title claims abstract description 145
- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 43
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 32
- 239000002070 nanowire Substances 0.000 claims abstract description 31
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims description 56
- 239000000243 solution Substances 0.000 claims description 54
- 238000000137 annealing Methods 0.000 claims description 49
- 239000011259 mixed solution Substances 0.000 claims description 25
- 238000002207 thermal evaporation Methods 0.000 claims description 23
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 18
- BLFXMRWZBRCIQG-UHFFFAOYSA-N hafnium;propan-2-ol Chemical compound [Hf].CC(C)O BLFXMRWZBRCIQG-UHFFFAOYSA-N 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 15
- DYHSMQWCZLNWGO-UHFFFAOYSA-N di(propan-2-yloxy)alumane Chemical compound CC(C)O[AlH]OC(C)C DYHSMQWCZLNWGO-UHFFFAOYSA-N 0.000 claims description 15
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 claims description 7
- 230000011987 methylation Effects 0.000 claims description 6
- 238000007069 methylation reaction Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 abstract 1
- 229960002337 magnesium chloride Drugs 0.000 description 8
- CCERQOYLJJULMD-UHFFFAOYSA-M magnesium;carbanide;chloride Chemical compound [CH3-].[Mg+2].[Cl-] CCERQOYLJJULMD-UHFFFAOYSA-M 0.000 description 4
- 241000209140 Triticum Species 0.000 description 3
- 235000021307 Triticum Nutrition 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 235000013312 flour Nutrition 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OBYFVISULYVYNB-UHFFFAOYSA-N ClC1=CC=CC=C1.P(Cl)(Cl)(Cl)(Cl)Cl Chemical compound ClC1=CC=CC=C1.P(Cl)(Cl)(Cl)(Cl)Cl OBYFVISULYVYNB-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- -1 acetic acid aluminum-diisopropoxide Chemical compound 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229940091250 magnesium supplement Drugs 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to a kind of silicon solar cell and preparation method thereof, the silicon solar cell includes rear electrode, backside passivation layer, n type single crystal silicon piece, silicon nanowire array, upper surface passivation layer, Spiro-OMeTAD/ CuPc composite layer, PEDOT from bottom to up:PSS layer and positive gate electrode, the PEDOT:PSS layer contains magnesium elements, by the specific process parameter of optimization silicon solar battery structure and each layer, so that silicon solar cell of the invention has excellent photoelectric conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of silicon solar cell and preparation method thereof.
Background technique
Single crystal silicon solar cell can not be widely applied because its cost is prohibitively expensive, though and organic solar batteries
So cost is relatively low, however the efficiency of organic solar batteries is far below inorganic solar cell, can not be also widely applied.?
On the basis of this, people increasingly pay close attention to the development process of hybrid inorganic-organic solar battery, hybrid inorganic-organic solar energy
Battery can avoid respective defect, in conjunction with the advantage of organic material and inorganic material to obtain higher photoelectric conversion efficiency.
Existing Si/PEDOT:The photoelectric conversion efficiency of PSS hybrid inorganic-organic solar battery needs further 10% or so
Improve the internal structure of hybrid inorganic-organic solar battery, to improve its photoelectric conversion efficiency.
Summary of the invention
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of silicon solar cell and its preparation side are provided
Method.
To achieve the above object, the preparation method of a kind of silicon solar cell proposed by the present invention, includes the following steps：
1) cleaning of N-type silicon chip；
2) silicon nanowire array is prepared on the surface of N-type silicon chip；
3) methylation processing is carried out to the N-type silicon chip that the step 2 obtains；
4) then contain oacetic acid aluminum-diisopropoxide and isopropanol hafnium in the upper surface spin coating of the N-type silicon chip
Organic solution, and be heat-treated, further it is passivated the upper surface of the N-type silicon chip；
5) preparation of Spiro-OMeTAD/ CuPc composite layer：The N-type silicon chip that the step 4 obtains front successively
Spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating
Spiro-OMeTAD solution, thermal evaporation CuPc carry out first time annealing, then to form the Spiro-OMeTAD/
CuPc composite layer；
6)PEDOT:The preparation of PSS layer：In PEDOT:A certain amount of magnesium chloride is added in PSS aqueous solution, to be formed
PEDOT:PSS mixed solution, the PEDOT described in the positive spin coating for the N-type silicon chip that the step 5 obtains:PSS mixed solution, and
It carries out second to make annealing treatment, to form the PEDOT:PSS modified layer；
7) back side of the N-type silicon chip obtained in the step 6 prepares an alumina flake using atomic layer deposition method,
In, the rate of deposition of aluminium oxide is 1-2 Ethylmercurichlorendimide/period, and the periodicity of deposition is 3-5；
8) preparation of positive gate electrode；
9) preparation of rear electrode.
The preparation method of silicon solar cell as above further in the step (2), by wet etching or is done
Method etching prepares silicon nanowire array on the surface of N-type silicon chip, the length of the single silicon nanowires in the silicon nanowire array
It is 1.5-2 microns, the diameter of the silicon nanowires is 300-500 nanometers, and the spacing of adjacent silicon nanowires is 400-800 nanometers.
The preparation method of silicon solar cell as above further in the step (3), first obtains step (2)
N-type silicon chip immerse in the chlorobenzene solution of saturation phosphorus pentachloride, impregnate 1-2 hours at 120 DEG C, then by the N-type silicon chip from
It is taken out in the chlorobenzene solution of the saturation phosphorus pentachloride, then which is placed in the tetrahydro furan of 1mol/L methyl-magnesium-chloride
It mutters in solution, is impregnated 6-9 hours at 85 DEG C, to form Si-CH on the surface of the N-type silicon chip3Key, to be passivated the N-type
Silicon wafer.
The preparation method of silicon solar cell as above, it is further, described to contain ethyl in the step (4)
The concentration of oacetic acid aluminum-diisopropoxide described in acetic acid aluminum-diisopropoxide and the organic solution of isopropanol hafnium is 0.3-
0.6mg/ml, the concentration of the isopropanol hafnium are 0.3-0.6mg/ml, and the revolving speed of spin coating is 4000-5000 revs/min, spin coating
Time is 1-3 minutes, 200-300 DEG C of the temperature of the heat treatment, and the time of the heat treatment is 10-20 minutes.
The preparation method of silicon solar cell as above, further, in the step (5), the Spiro-OMeTAD
The revolving speed of the concentration 2-4mg/ml of solution, Spiro-OMeTAD solution described in each spin coating are 1500-2500 revs/min, often
The time of Spiro-OMeTAD solution described in secondary spin coating is 1-3 minutes, and the rate of each thermal evaporation CuPc is 1-2 angstroms
Meter per second, the time of each thermal evaporation CuPc are 3-6 seconds, and the annealing temperature of the first time annealing is 100-110
DEG C, the annealing time of the first time annealing is 15-25 minutes.
The preparation method of silicon solar cell as above, further, in the step (6), PEDOT:PSS mixed solution
In the concentration of magnesium chloride be 0.05-0.5mg/ml, PEDOT described in spin coating:The revolving speed of PSS mixed solution be 1800-2500 turn/
Minute, PEDOT described in spin coating:The time of PSS mixed solution is 2-5 minutes, and the annealing temperature of second of annealing is
110-130 DEG C, the annealing time of second of annealing is 20-30 minutes.
The preparation method of silicon solar cell as above further in the step (8), passes through hot evaporation metallic silver
Form the positive gate electrode, the positive gate electrode with a thickness of 180-260 nanometers.
The preparation method of silicon solar cell as above further in the step (9), passes through hot evaporation metallic aluminium
Form the rear electrode, the rear electrode with a thickness of 200-300 nanometers.
The present invention also proposes a kind of silicon solar cell, uses the above method to prepare to be formed.
The present invention has following advantages compared with prior art：
To be passivated silicon face, then in the preparation process of silicon solar cell of the invention, methylation processing is carried out first
Spin coating contains the organic solution of oacetic acid aluminum-diisopropoxide and isopropanol hafnium, and is further passivated silicon table by heat treatment
Face effectively reduces the defect state of silicon face by two step passivation process；It is initially formed on silicon nanowire array surface
Spiro-OMeTAD/ CuPc composite layer re-forms PEDOT:PSS layer is effectively kept away with obtaining the organic compound film of high quality
The top for exempting from silicon nanowires is exposed to PEDOT:PSS layer, ultra-thin Spiro-OMeTAD/ CuPc composite layer improve silicon nanometer
Line and PEDOT:Contact berrier between PSS layer, while PEDOT:PSS layer contains magnesium elements and further improves built in field, N
The back side of type silicon wafer is prepared with a ultra-thin alumina flake, has effectively been passivated the back side of silicon wafer, the phase interworking of above-mentioned each structure
It closes, and then imitates the photoelectric conversion efficiency for improving silicon solar cell of the invention.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silicon solar cell of the invention.
Specific embodiment
As shown in Figure 1, the present invention proposes that a kind of silicon solar cell, the silicon solar cell include the back side from bottom to up
Electrode 1, backside passivation layer 2, n type single crystal silicon piece 3, silicon nanowire array 4, upper surface passivation layer 5, Spiro-OMeTAD/ phthalocyanine
Copper composite layer 6, PEDOT:PSS layer 7 and positive gate electrode 8.
The present invention also proposes the preparation method of above-mentioned silicon solar cell, includes the following steps：
1) cleaning of N-type silicon chip；
2) silicon nanowire array is prepared on the surface of N-type silicon chip, by wet etching or is dry-etched in the table of N-type silicon chip
Wheat flour is for silicon nanowire array, and the length of the single silicon nanowires in the silicon nanowire array is 1.5-2 microns, and the silicon is received
The diameter of rice noodles is 300-500 nanometers, and the spacing of adjacent silicon nanowires is 400-800 nanometers；
3) methylation processing is carried out to the N-type silicon chip that the step 2 obtains, the N-type silicon chip for first obtaining step (2) is soaked
Enter to be saturated in the chlorobenzene solution of phosphorus pentachloride, be impregnated at 120 DEG C 1-2 hours, it is then that the N-type silicon chip is phosphoric from the saturation
It takes out, is then placed in the N-type silicon chip in the tetrahydrofuran solution of 1mol/L methyl-magnesium-chloride, 85 in the chlorobenzene solution of phosphorus
It is impregnated 6-9 hours at DEG C, to form Si-CH on the surface of the N-type silicon chip3Key, to be passivated the N-type silicon chip；
4) then contain oacetic acid aluminum-diisopropoxide and isopropanol hafnium in the upper surface spin coating of the N-type silicon chip
Organic solution, and be heat-treated, further it is passivated the upper surface of the N-type silicon chip, wherein described to contain oacetic acid
The concentration of oacetic acid aluminum-diisopropoxide described in aluminum-diisopropoxide and the organic solution of isopropanol hafnium is 0.3-0.6mg/
Ml, the concentration of the isopropanol hafnium are 0.3-0.6mg/ml, and the revolving speed of spin coating is 4000-5000 revs/min, and the time of spin coating is
1-3 minutes, 200-300 DEG C of the temperature of the heat treatment, the time of the heat treatment was 10-20 minutes；
5) preparation of Spiro-OMeTAD/ CuPc composite layer：The N-type silicon chip that the step 4 obtains front successively
Spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating
Spiro-OMeTAD solution, thermal evaporation CuPc carry out first time annealing, then to form the Spiro-OMeTAD/
CuPc composite layer, wherein the concentration 2-4mg/ml of the Spiro-OMeTAD solution, Spiro-OMeTAD described in each spin coating
The revolving speed of solution is 1500-2500 revs/min, and the time of Spiro-OMeTAD solution described in each spin coating is 1-3 minutes,
The rate of each thermal evaporation CuPc is 1-2 angstroms of meter per second, and the time of each thermal evaporation CuPc is 3-6 seconds, and described first
The annealing temperature of secondary annealing is 100-110 DEG C, and the annealing time of the first time annealing is 15-25 minutes；
6)PEDOT:The preparation of PSS layer：In PEDOT:A certain amount of magnesium chloride is added in PSS aqueous solution, to be formed
PEDOT:PSS mixed solution, the PEDOT described in the positive spin coating for the N-type silicon chip that the step 5 obtains:PSS mixed solution, and
It carries out second to make annealing treatment, to form the PEDOT:PSS modified layer, wherein PEDOT:Magnesium chloride in PSS mixed solution
Concentration be 0.05-0.5mg/ml, PEDOT described in spin coating:The revolving speed of PSS mixed solution is 1800-2500 revs/min, spin coating
The PEDOT:The time of PSS mixed solution is 2-5 minutes, and the annealing temperature of second of annealing is 110-130 DEG C,
The annealing time of second of annealing is 20-30 minutes；
7) back side of the N-type silicon chip obtained in the step 6 prepares an alumina flake using atomic layer deposition method,
In, the rate of deposition of aluminium oxide is 1-2 Ethylmercurichlorendimide/period, and the periodicity of deposition is 3-5；
8) preparation of positive gate electrode forms the positive gate electrode, the positive gate electrode by hot evaporation metallic silver
With a thickness of 180-260 nanometers；
9) preparation of rear electrode forms the rear electrode, the thickness of the rear electrode by hot evaporation metallic aluminium
It is 200-300 nanometers.
Embodiment 1：
The present invention also proposes the preparation method of above-mentioned silicon solar cell, includes the following steps：
1) cleaning of N-type silicon chip；
2) silicon nanowire array is prepared on the surface of N-type silicon chip, by wet etching or is dry-etched in the table of N-type silicon chip
Wheat flour is for silicon nanowire array, and the length of the single silicon nanowires in the silicon nanowire array is 1.8 microns, the silicon nanometer
The diameter of line is 400 nanometers, and the spacing of adjacent silicon nanowires is 600 nanometers；
3) methylation processing is carried out to the N-type silicon chip that the step 2 obtains, the N-type silicon chip for first obtaining step (2) is soaked
Enter to be saturated in the chlorobenzene solution of phosphorus pentachloride, be impregnated at 120 DEG C 1.5 hours, it is then that the N-type silicon chip is phosphoric from the saturation
It takes out, is then placed in the N-type silicon chip in the tetrahydrofuran solution of 1mol/L methyl-magnesium-chloride, 85 in the chlorobenzene solution of phosphorus
It is impregnated 8 hours at DEG C, to form Si-CH on the surface of the N-type silicon chip3Key, to be passivated the N-type silicon chip；
4) then contain oacetic acid aluminum-diisopropoxide and isopropanol hafnium in the upper surface spin coating of the N-type silicon chip
Organic solution, and be heat-treated, further it is passivated the upper surface of the N-type silicon chip, wherein described to contain oacetic acid
The concentration of oacetic acid aluminum-diisopropoxide described in aluminum-diisopropoxide and the organic solution of isopropanol hafnium is 0.5mg/ml, institute
The concentration for stating isopropanol hafnium is 0.5mg/ml, and the revolving speed of spin coating is 4500 revs/min, and the time of spin coating is 2 minutes, at the heat
240 DEG C of the temperature of reason, the time of the heat treatment are 18 minutes；
5) preparation of Spiro-OMeTAD/ CuPc composite layer：The N-type silicon chip that the step 4 obtains front successively
Spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating
Spiro-OMeTAD solution, thermal evaporation CuPc carry out first time annealing, then to form the Spiro-OMeTAD/
CuPc composite layer, wherein the concentration 3mg/ml of the Spiro-OMeTAD solution, Spiro-OMeTAD described in each spin coating are molten
The revolving speed of liquid is 2200 revs/min, and the time of Spiro-OMeTAD solution described in each spin coating is 2 minutes, and heat is steamed every time
The rate for sending out CuPc is 1.8 angstroms of meter per seconds, and the time of each thermal evaporation CuPc is 5 seconds, the first time annealing
Annealing temperature be 105 DEG C, the annealing time of first time annealing is 20 minutes；
6)PEDOT:The preparation of PSS layer：In PEDOT:A certain amount of magnesium chloride is added in PSS aqueous solution, to be formed
PEDOT:PSS mixed solution, the PEDOT described in the positive spin coating for the N-type silicon chip that the step 5 obtains:PSS mixed solution, and
It carries out second to make annealing treatment, to form the PEDOT:PSS modified layer, wherein PEDOT:Magnesium chloride in PSS mixed solution
Concentration be 0.25mg/ml, PEDOT described in spin coating:The revolving speed of PSS mixed solution is 2200 revs/min, PEDOT described in spin coating:
The time of PSS mixed solution is 3 minutes, and the annealing temperature of second of annealing is 125 DEG C, at second of the annealing
The annealing time of reason is 25 minutes；
7) back side of the N-type silicon chip obtained in the step 6 prepares an alumina flake using atomic layer deposition method,
In, the rate of deposition of aluminium oxide is 1.5 Ethylmercurichlorendimides/period, and the periodicity of deposition is 4；
8) preparation of positive gate electrode forms the positive gate electrode, the positive gate electrode by hot evaporation metallic silver
With a thickness of 220 nanometers；
9) preparation of rear electrode forms the rear electrode, the thickness of the rear electrode by hot evaporation metallic aluminium
It is 260 nanometers.
The open-circuit voltage of the silicon solar cell of above method preparation is 0.62V, short circuit current 34.2mA/cm2, filling
The factor is 0.75, photoelectric conversion efficiency 15.9%.
Embodiment 2
The present invention also proposes the preparation method of above-mentioned silicon solar cell, includes the following steps：
1) cleaning of N-type silicon chip；
2) silicon nanowire array is prepared on the surface of N-type silicon chip, by wet etching or is dry-etched in the table of N-type silicon chip
Wheat flour is for silicon nanowire array, and the length of the single silicon nanowires in the silicon nanowire array is 1.5 microns, the silicon nanometer
The diameter of line is 300 nanometers, and the spacing of adjacent silicon nanowires is 500 nanometers；
3) methylation processing is carried out to the N-type silicon chip that the step 2 obtains, the N-type silicon chip for first obtaining step (2) is soaked
Enter to be saturated in the chlorobenzene solution of phosphorus pentachloride, impregnate 2 hours at 120 DEG C, then by the N-type silicon chip from the saturation phosphorus pentachloride
Chlorobenzene solution in take out, then the N-type silicon chip is placed in the tetrahydrofuran solution of 1mol/L methyl-magnesium-chloride, at 85 DEG C
It is lower to impregnate 9 hours, to form Si-CH on the surface of the N-type silicon chip3Key, to be passivated the N-type silicon chip；
4) then contain oacetic acid aluminum-diisopropoxide and isopropanol hafnium in the upper surface spin coating of the N-type silicon chip
Organic solution, and be heat-treated, further it is passivated the upper surface of the N-type silicon chip, wherein described to contain oacetic acid
The concentration of oacetic acid aluminum-diisopropoxide described in aluminum-diisopropoxide and the organic solution of isopropanol hafnium is 0.4mg/ml, institute
The concentration for stating isopropanol hafnium is 0.5mg/ml, and the revolving speed of spin coating is 4000 revs/min, and the time of spin coating is 3 minutes, at the heat
280 DEG C of the temperature of reason, the time of the heat treatment are 20 minutes；
5) preparation of Spiro-OMeTAD/ CuPc composite layer：The N-type silicon chip that the step 4 obtains front successively
Spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating
Spiro-OMeTAD solution, thermal evaporation CuPc carry out first time annealing, then to form the Spiro-OMeTAD/
CuPc composite layer, wherein the concentration 2mg/ml of the Spiro-OMeTAD solution, Spiro-OMeTAD described in each spin coating are molten
The revolving speed of liquid is 1800 revs/min, and the time of Spiro-OMeTAD solution described in each spin coating is 3 minutes, and heat is steamed every time
The rate for sending out CuPc is 1 angstrom of meter per second, and the time of each thermal evaporation CuPc is 6 seconds, the first time annealing
Annealing temperature is 110 DEG C, and the annealing time of the first time annealing is 15 minutes；
6)PEDOT:The preparation of PSS layer：In PEDOT:A certain amount of magnesium chloride is added in PSS aqueous solution, to be formed
PEDOT:PSS mixed solution, the PEDOT described in the positive spin coating for the N-type silicon chip that the step 5 obtains:PSS mixed solution, and
It carries out second to make annealing treatment, to form the PEDOT:PSS modified layer, wherein PEDOT:Magnesium chloride in PSS mixed solution
Concentration be 0.1mg/ml, PEDOT described in spin coating:The revolving speed of PSS mixed solution is 2500 revs/min, PEDOT described in spin coating:
The time of PSS mixed solution is 4 minutes, and the annealing temperature of second of annealing is 110 DEG C, at second of the annealing
The annealing time of reason is 30 minutes；
7) back side of the N-type silicon chip obtained in the step 6 prepares an alumina flake using atomic layer deposition method,
In, the rate of deposition of aluminium oxide is 2 Ethylmercurichlorendimides/period, and the periodicity of deposition is 5；
8) preparation of positive gate electrode forms the positive gate electrode, the positive gate electrode by hot evaporation metallic silver
With a thickness of 200 nanometers；
9) preparation of rear electrode forms the rear electrode, the thickness of the rear electrode by hot evaporation metallic aluminium
It is 250 nanometers.
The open-circuit voltage of the silicon solar cell of above method preparation is 0.61V, short circuit current 33.8mA/cm2, filling
The factor is 0.73, photoelectric conversion efficiency 15.05%.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (9)
1. a kind of preparation method of silicon solar cell, it is characterised in that：Include the following steps：
1) cleaning of N-type silicon chip；
2) silicon nanowire array is prepared on the surface of N-type silicon chip；
3) methylation processing is carried out to the N-type silicon chip that the step 2 obtains；
4) then contain the organic of oacetic acid aluminum-diisopropoxide and isopropanol hafnium in the upper surface spin coating of the N-type silicon chip
Solution, and be heat-treated, further it is passivated the upper surface of the N-type silicon chip；
5) preparation of Spiro-OMeTAD/ CuPc composite layer：In the positive successively spin coating for the N-type silicon chip that the step 4 obtains
Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-OMeTAD solution, thermal evaporation CuPc, spin coating Spiro-
OMeTAD solution, thermal evaporation CuPc carry out first time annealing, then to form the Spiro-OMeTAD/ CuPc
Composite layer；
6)PEDOT:The preparation of PSS layer：In PEDOT:A certain amount of magnesium chloride is added in PSS aqueous solution, to form PEDOT:PSS
Mixed solution, the PEDOT described in the positive spin coating for the N-type silicon chip that the step 5 obtains:PSS mixed solution, and carry out second
Annealing, to form the PEDOT:PSS modified layer；
7) back side of the N-type silicon chip obtained in the step 6 prepares an alumina flake using atomic layer deposition method, wherein heavy
The rate of product aluminium oxide is 1-2 Ethylmercurichlorendimide/period, and the periodicity of deposition is 3-5；
8) preparation of positive gate electrode；
9) preparation of rear electrode.
2. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (2), lead to
It crosses wet etching or is dry-etched in the surface of N-type silicon chip and prepare silicon nanowire array, it is single in the silicon nanowire array
The length of silicon nanowires is 1.5-2 microns, and the diameter of the silicon nanowires is 300-500 nanometers, the spacing of adjacent silicon nanowires
It is 400-800 nanometers.
3. the preparation method of silicon solar cell according to claim 1, it is characterised in that：It is first in the step (3)
The N-type silicon chip that first step (2) is obtained immerses in the chlorobenzene solution of saturation phosphorus pentachloride, impregnates 1-2 hours, connects at 120 DEG C
The N-type silicon chip is taken out from the chlorobenzene solution of the saturation phosphorus pentachloride, the N-type silicon chip is then placed in 1mol/L methyl
It in the tetrahydrofuran solution of magnesium chloride, is impregnated 6-9 hours at 85 DEG C, to form Si-CH on the surface of the N-type silicon chip3Key,
To be passivated the N-type silicon chip.
4. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (4), institute
State oacetic acid aluminum-diisopropoxide described in the organic solution containing oacetic acid aluminum-diisopropoxide and isopropanol hafnium
Concentration be 0.3-0.6mg/ml, the concentration of the isopropanol hafnium is 0.3-0.6mg/ml, and the revolving speed of spin coating is 4000-5000
Rev/min, the time of spin coating is 1-3 minutes, 200-300 DEG C of the temperature of the heat treatment, and the time of the heat treatment is 10-20
Minute.
5. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (5), institute
The concentration 2-4mg/ml of Spiro-OMeTAD solution is stated, the revolving speed of Spiro-OMeTAD solution described in each spin coating is 1500-
2500 revs/min, the time of Spiro-OMeTAD solution described in each spin coating is 1-3 minutes, each thermal evaporation CuPc
Rate is 1-2 angstroms of meter per second, and the time of each thermal evaporation CuPc is 3-6 seconds, the annealing temperature of the first time annealing
Degree is 100-110 DEG C, and the annealing time of the first time annealing is 15-25 minutes.
6. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (6),
PEDOT:The concentration of magnesium chloride in PSS mixed solution is 0.05-0.5mg/ml, PEDOT described in spin coating:PSS mixed solution
Revolving speed is 1800-2500 revs/min, PEDOT described in spin coating:The time of PSS mixed solution is 2-5 minutes, described to move back for the second time
The annealing temperature of fire processing is 110-130 DEG C, and the annealing time of second of annealing is 20-30 minutes.
7. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (8), lead to
Overheat evaporation metal silver forms the positive gate electrode, the positive gate electrode with a thickness of 180-260 nanometers.
8. the preparation method of silicon solar cell according to claim 1, it is characterised in that：In the step (9), lead to
Overheat evaporation metal aluminium forms the rear electrode, the rear electrode with a thickness of 200-300 nanometers.
9. a kind of silicon solar cell, which is characterized in that prepare using the described in any item methods of claim 1-8 to be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810586050.0A CN108831955B (en) | 2018-06-08 | 2018-06-08 | Silicon solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810586050.0A CN108831955B (en) | 2018-06-08 | 2018-06-08 | Silicon solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108831955A true CN108831955A (en) | 2018-11-16 |
| CN108831955B CN108831955B (en) | 2020-08-11 |
Family
ID=64144813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810586050.0A Active CN108831955B (en) | 2018-06-08 | 2018-06-08 | Silicon solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108831955B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029433A (en) * | 2019-12-05 | 2020-04-17 | 徐州吴瑞信息科技有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263204A (en) * | 2011-07-20 | 2011-11-30 | 苏州大学 | Organic-inorganic hybridization solar battery and manufacturing method thereof |
| CN102280588A (en) * | 2011-08-02 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof |
| CN103236501A (en) * | 2013-03-13 | 2013-08-07 | 华中科技大学 | Metal-halide-doped organic hole transporting layer, and preparation method and application thereof |
| CN104488089A (en) * | 2012-07-19 | 2015-04-01 | 日立化成株式会社 | Passivation-layer-forming composition, semiconductor substrate having passivation layer, method for manufacturing semiconductor substrate having passivation layer, solar-cell element, method for manufacturing solar-cell element, and solar cell |
| CN107275485A (en) * | 2016-04-05 | 2017-10-20 | 韩国化学研究院 | Perovskite solar cell with high-fire resistance |
| CN107946470A (en) * | 2017-11-28 | 2018-04-20 | 佛山市宝粤美科技有限公司 | A kind of heterojunction solar battery and preparation method thereof |
| CN108011045A (en) * | 2017-12-01 | 2018-05-08 | 苏州宝澜环保科技有限公司 | A kind of silicon micron column array organic inorganic hybridization solar cell and preparation method thereof |
-
2018
- 2018-06-08 CN CN201810586050.0A patent/CN108831955B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263204A (en) * | 2011-07-20 | 2011-11-30 | 苏州大学 | Organic-inorganic hybridization solar battery and manufacturing method thereof |
| CN102280588A (en) * | 2011-08-02 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof |
| CN104488089A (en) * | 2012-07-19 | 2015-04-01 | 日立化成株式会社 | Passivation-layer-forming composition, semiconductor substrate having passivation layer, method for manufacturing semiconductor substrate having passivation layer, solar-cell element, method for manufacturing solar-cell element, and solar cell |
| CN103236501A (en) * | 2013-03-13 | 2013-08-07 | 华中科技大学 | Metal-halide-doped organic hole transporting layer, and preparation method and application thereof |
| CN107275485A (en) * | 2016-04-05 | 2017-10-20 | 韩国化学研究院 | Perovskite solar cell with high-fire resistance |
| CN107946470A (en) * | 2017-11-28 | 2018-04-20 | 佛山市宝粤美科技有限公司 | A kind of heterojunction solar battery and preparation method thereof |
| CN108011045A (en) * | 2017-12-01 | 2018-05-08 | 苏州宝澜环保科技有限公司 | A kind of silicon micron column array organic inorganic hybridization solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JUNPENG LIU: ""Organic/inorganic hybrid solar cells with vertically oriented ZnO nanowires"", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029433A (en) * | 2019-12-05 | 2020-04-17 | 徐州吴瑞信息科技有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN111029433B (en) * | 2019-12-05 | 2021-08-03 | 吉林省富德嘉合能源科技有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108831955B (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105469996B (en) | A kind of perovskite solar cell based on metal nanoparticle modifying interface and preparation method thereof | |
| CN108461580B (en) | A kind of silicon solar cell and preparation method thereof | |
| CN105702865B (en) | A kind of metal-doped perovskite thin film, preparation method and application | |
| CN107768467B (en) | A kind of silica-based solar cell and preparation method thereof | |
| CN107946405B (en) | A kind of production method being passivated contact solar cell | |
| CN105226187A (en) | Film crystal silicon perovskite heterojunction solar cell and preparation method thereof | |
| CN104362253A (en) | All solid state perovskite microcrystalline silicon composite solar battery and preparation method thereof | |
| CN108417719A (en) | A kind of silicon substrate nucleocapsid photovoltaic cell and preparation method thereof | |
| CN110112258A (en) | Perovskite solar battery and its manufacturing method | |
| CN105742494A (en) | Perovskite solar cell and preparation method thereof | |
| Wu et al. | Integrated planar and bulk dual heterojunctions capable of efficient electron and hole extraction for perovskite solar cells with> 17% efficiency | |
| CN107895760A (en) | A kind of silicon nanowire array heterojunction solar battery and preparation method thereof | |
| Lu et al. | Improved efficiency of silicon nanoholes/gold nanoparticles/organic hybrid solar cells via localized surface plasmon resonance | |
| CN104167492A (en) | Perovskite battery and preparation method thereof | |
| CN105489769A (en) | Preparation method of cathode and anode jointly modified perovskite type solar cell | |
| Wang et al. | Interface modification for organic and perovskite solar cells | |
| CN109402653A (en) | InGaN nano-pillar@Au Nanocomposites structure and the preparation method and application thereof on a kind of Si substrate | |
| WO2019144335A1 (en) | Heterojunction photovoltaic cell and preparation method therefor | |
| Gao et al. | High‐Efficiency Graphene‐Oxide/Silicon Solar Cells with an Organic‐Passivated Interface | |
| CN108831955A (en) | A kind of silicon solar cell and preparation method thereof | |
| CN108539027B (en) | Organic-inorganic hybrid solar cell and preparation method thereof | |
| CN105449103A (en) | Thin film crystalline silicon perovskite heterojunction solar cell and preparation method thereof | |
| CN106449983B (en) | A kind of barium oxide anode buffer layer and its preparation method and application | |
| CN108847428A (en) | A kind of solar battery and preparation method thereof based on silicon nanowire array | |
| CN108011045A (en) | A kind of silicon micron column array organic inorganic hybridization solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200720 Address after: 226100 No. 468 Xiushan Road, Haimen Street, Haimen City, Nantong City, Jiangsu Province Applicant after: Haimen Mingchi Industrial Design Co.,Ltd. Address before: No. 1701 Binhe Road, Suzhou High-tech Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU BAOLAN ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210201 Address after: 226100 Guangzhou Road 999 Haimen Economic and Technological Development Zone, Nantong City, Jiangsu Province Patentee after: Nantong Construction Engineering Co.,Ltd. Address before: 226100 468 Xiushan Road, Haimen street, Haimen, Nantong, Jiangsu Patentee before: Haimen Mingchi Industrial Design Co.,Ltd. |