CN102280588A - Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof - Google Patents
Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof Download PDFInfo
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Abstract
The invention discloses a silicon-based nuclear shell nanowire photovoltaic cell and a preparation process thereof. The photovoltaic cell comprises an N-type silicon substrate, wherein an N-type silicon nanowire array serving as a photoactivity layer is formed on the front of the substrate, and a metal back electrode is arranged on the bottom of the substrate; and the silicon nanowire array and an organic conductive polymer in electron hole transmission form a nuclear shell Schottky heterojunction on which an ITO (indium tin oxide) top electrode is arranged. Furthermore, the organic conductive polymer comprises a PEDOT (polyethylenedioxythiophene):PSS (poly(sodium sulfonate)). The silicon nanowire array and the silicon substrate are formed by single crystal silicon or polycrystalline silicon with purity of 3-6N level, the nanowire height is 3-5 mu m, and the substrate thickness is 5-200 mu m. The preparation process is as follows: preparing the silicon nanowire array on the front of the N-type silicon substrate by using wet etching, then forming the nuclear shell nanowire heterojunction with the organic conductive polymer in electron hole transmission, and finally respectively assembling the metal back electrode and the ITO top electrode on the bottom of the silicon substrate and the heterojunction. The photovoltaic cell has the advantages of less raw material amount, low cost, high conversion efficiency and simple preparation process.
Description
Technical field
The present invention be more particularly directed to a kind of organic conductive polyalcohol nucleocapsid nano wire photovoltaic cell and preparation technology thereof of N type silicon/hole transport, belong to the solar energy converting technical field.
Background technology
Photovoltaic cell can constantly change into electric energy in a steady stream with sunlight and solve lack of energy and the problem of environmental pollution that current people face.The photoelectric conversion efficiency height of crystal silicon photovoltaic cell has occupied 80% of whole photovoltaic market.But the crystal silicon photovoltaic cell cost is higher at present, has hindered the development of photovoltaic generation industry.Wherein, crystal silicon photovoltaic cell need be used a greater number (200-300 μ m is thick) and high-purity (〉 6N level) crystalline silicon as raw material, cost of material accounts for more than 40% of overall optical photovoltaic assembly, is a higher principal element of crystal silicon photovoltaic cell cost.The usage quantity that how to reduce raw material on the basis that keeps crystal silicon photovoltaic cell efficient effectively is an effective way that reduces the photovoltaic module cost.The photovoltaic cell of silicon nanowire array can be realized this approach.The article of having reported (as, " Light trapping in silicon nanowire solar cells ", " Nano Letters ", 2010,10, p1082 – 1087) mention in that silicon nanowire array has remarkable photo-induction and catches performance, the silicon nanowire array that several μ m are high can absorb the spectral region that 300-1100nm(silicon intrinsic absorbs fully) solar photon, can reduce the usage quantity of crystalline silicon raw material effectively.Simultaneously, photovoltaic junction in this photovoltaic cell can be made into the core-shell nano line structure, photo-generated carrier can effectively be separated by photovoltaic junction in the very short distance of silicon nanowires radial motion, thereby allows to use low-quality silicon feedstock production device, further reduces the cost of silicon raw material.
The key that obtains above-mentioned silicon nanowires photovoltaic cell is design and the photovoltaic junction of constructing the core-shell nano linear array structure.Mention a kind of employing P type heterojunction photovoltaic cell that silicon nanowire array/N type organic semiconductor mixes in the application for a patent for invention of publication number CN101257094.Mention that in this photovoltaic cell silicon nanowire array serves as the sunlight anti-reflection layer, the photoactive layer of device (base) still is a body phase crystalline silicon, still needs to make device with high quantity, high-quality silicon raw material.
Summary of the invention
The objective of the invention is to propose a kind of core-shell nano linear light volt battery and preparation technology thereof, it is with low cost, the photoelectric conversion efficiency height, and be easy to preparation, thus overcome deficiency of the prior art.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of silica-based core-shell nano linear light volt battery, it is characterized in that: it comprises N type silicon substrate, described N type silicon substrate front is formed with silicon nanowire array as photoactive layer, its bottom surface is provided with metal back electrode, the nanowire heterojunction that the organic conductive polymer of conformal covering hole transport forms nucleocapsid structure on the described silicon nanowire array is as photovoltaic junction, and described heterojunction is provided with the ITO top electrode.
Preferably, the organic conductive polymer of described hole transport comprises PEDOT:PSS.
Described N type silicon nanowire array and silicon substrate are the monocrystalline or the polysilicon formation of 3-6N level by purity, and wherein, the silicon nanowires height is 3-5 μ m, and silicon substrate thickness is 5-200 μ m.
Described metal back electrode comprises the Al electrode layer that covers on N type silicon substrate bottom surface, and described ITO top electrode comprises the ito glass that covers on heterojunction.
A kind of preparation technology of silica-based core-shell nano linear light volt battery, it is characterized in that, this technology is: adopt wet etching to prepare silicon nanowire array in N type silicon substrate front, cover on the silicon nanowire array so that the organic conductive polymer of hole transport is conformal then, form core-shell nano line heterojunction, difference assembling metal back electrode and ITO top electrode on N type silicon substrate bottom surface and heterojunction obtain target product at last.
Further, this technology specifically comprises the steps:
ⅰ, prepare silicon nanowire array in the positive metal assistance chemistry of silicones etching that adopts of N type silicon substrate with catalytic activity;
After ⅱ, the solution of getting the organic conductive polymer of hole transport were filled silicon nanowire array, the solvent in this organic conductive polymer solution was removed in evaporation, forms the conformal organic conductive thin polymer film that covers on the silicon nanowire array;
ⅲ, on N type silicon substrate bottom surface and heterojunction respectively assembling metal back electrode and ITO top electrode, obtain target product.
Step I is specially: at first form discontinuous silver-colored film in the positive deposited electroless of N type silicon substrate, then by the catalytic action of silver-colored film, form silicon nanowire array at N type silicon substrate front wet etching, remove silver-colored film at last.
The organic conductive polymer of described hole transport comprises PEDOT:PSS, and described metal back electrode comprises the Al electrode layer that is deposited on the N type silicon substrate bottom surface.
The process of assembling ITO top electrode is on heterojunction array:
Get the organic conductive polymer solution that applies hole transport on the conducting surface of ito glass, and be placed on the heterojunction surface, the solvent in this organic conductive polymer solution is removed in evaporation then, and the conducting surface of ito glass is fixedlyed connected with heterojunction.
The organic conductive polymer solution of described hole transport comprises that volume ratio is the polar organic solvent and the commercial PEDOT:PSS aqueous solution of 1:3-1:1, and described polar organic solvent is selected from any one in ethanol, acetone and the isopropyl alcohol at least.
The principal character of silicon of the present invention/PEDOT:PSS core-shell nano linear light volt battery is: photoactive layer is the silicon nanowire array that is positioned on the silicon substrate, photovoltaic is become the N type silicon of core-shell nano line structure and the organic conductive polymer of hole transport, PEDOT:PSS heterojunction particularly, PEDOT:PSS conduction, transparent wherein, and the conduction band of Fermi level and silicon helps opto-electronic conversion near can be effectively and silicon formation Window layer/absorption build Schottky photovoltaic junction.In addition, silicon nanowires and silicon substrate are to be that the monocrystalline or the polysilicon of 3-6N level forms by purity, and nanowire height is 3-5 μ m, and substrate thickness is 5-200 μ m, helps reducing device cost.In addition, this photovoltaic cell also can comprise assemblies such as top electrode ito glass, Al hearth electrode.
The main process of the manufacturing process of photovoltaic cell of the present invention is: at first metal assistance chemistry of silicones is etched in and prepares silicon nanowire array on the silicon substrate; What adopt to add polar organic solvent subsequently is that the organic conductive polymer solution of the hole transport of example is filled in the silicon nanowire array of metal assistance chemistry of silicones etching with the PEDOT:PSS aqueous solution, forms silicon/PEDOT:PSS core-shell nano linear array after the solvent evaporated; At last by preparing metal back electrode at silicon substrate back of the body surface heat evaporation and, forming photovoltaic device at the front surface assembling ITO of silicon/PEDOT:PSS core-shell nano linear array top electrode.Wherein, have super-hydrophobicity because metal assistance chemistry of silicones etching prepares the silicon nanowire array surface, the PEDOT:PSS aqueous solution is difficult to fill silicon nanowire array, is difficult to form the core-shell nano line.So, among the present invention alcohol, acetone or isopropyl alcohol isopolarity organic solvent are added in the PEDOT:PSS aqueous solution, thereby make PEDOT:PSS solution effectively fill silicon nanowire array, to form the core-shell nano line.
The operation principle of photovoltaic cell of the present invention is: sunlight sees through the ito glass top electrode and the PEDOT:PSS layer is absorbed by silicon nanowires, produce hole-duplet, separated by silicon/PEDOT:PSS photovoltaic junction with back cavitation-duplet, the hole is collected by the ITO top electrode after being transferred to the PEDOT:PSS layer, electronics is then collected by the AL hearth electrode, realizes whole opto-electronic conversion.
Compared with prior art, the invention has the advantages that: this silica-based core-shell nano linear light volt battery raw material consumption is few, with low cost, the photoelectric conversion efficiency height, and its preparation technology is succinct, easy to operate, can realize the large-scale production of photovoltaic cell.
Description of drawings
Fig. 1 is the structural representation of silicon among the present invention/PEDOT:PSS core-shell nano linear light volt battery, and among the figure: 1 is the AL hearth electrode, and 2 is silicon substrate, 3 is silicon/PEDOT:PSS core-shell nano linear array, 31 is silicon nanowire array, and 32 is the PEDOT:PSS layer, and 4 is the top electrode ito glass;
Fig. 2 a is the electron scanning micrograph of silicon shown in Fig. 1/PEDOT:PSS core-shell nano linear array;
Fig. 2 b is the transmission electron microscope photo of a single silicon/PEDOT:PSS core-shell nano line;
Fig. 2 c is the transmission electron microscope photo at silicon/PEDOT:PSS core-shell nano line interface;
Fig. 3 is the current-voltage characteristic curve figure of a typical silicon of the present invention/PEDOT:PSS core-shell nano linear light volt battery in the illumination of AM 1.5G simulated solar.
Specific embodiments
Below in conjunction with accompanying drawing and a preferred embodiment technical scheme of the present invention is elaborated.
Consult Fig. 1, this silicon/PEDOT:PSS core-shell nano linear light volt battery is made of ito glass, silicon/PEDOT:PSS core-shell nano linear array, N type silicon substrate and Al electrode.
The principal character of this photovoltaic cell is, photoactive layer is a silicon nanowire array, and photovoltaic is become the N type silicon and the PEDOT:PSS heterojunction of core-shell nano line structure.PEDOT:PSS conduction, transparent wherein, and the conduction band of Fermi level and silicon is approaching can be effectively and silicon formation Window layer/absorption build Schottky photovoltaic junction, helps opto-electronic conversion.Aforementioned silicon nanowires and silicon substrate are to be that the monocrystalline or the polysilicon of 3-6N level forms by purity, and nanowire height is 3-5 μ m, and substrate thickness is 5-200 μ m, helps reducing the cost of material of device.
The preparation technology of this silicon/PEDOT:PSS core-shell nano linear light volt battery comprises the steps:
(1) prepares silicon nanowire array on the silicon substrate.At first under the room temperature cleaned N type silicon chip is placed in 0.02M silver nitrate and the 5M hydrofluoric acid mixed aqueous solution, at the discontinuous silver-colored film of surface of silicon nanowires deposited electroless one deck, sample is placed in the mixed aqueous solution of 4.6M hydrofluoric acid and 0.8M hydrogen peroxide subsequently, and metal assistance chemistry of silicones etching prepares silicon nanowire array.At last, the silicon chip that etching is good places 40% nitric acid to remove silver catalyst, uses 5% hydrofluoric acid, washed with de-ionized water then successively, obtains silicon nanowire array 31 on silicon substrate;
(2) preparation silicon/PEDOT:PSS core-shell nano linear array: with the alcohol and the commercial PEDOT:PSS aqueous solution is that 1:3 mixes with the volume ratio, subsequently the mixed solution spin coating is filled in the silicon nanowire array, at last sample is placed on solvent evaporated in 120 ℃ the baking oven, obtains silicon/PEDOT:PSS core-shell nano linear array 3(and consult Fig. 2 a-2c);
(3) preparation silicon/PEDOT:PSS core-shell nano linear light volt battery: at first adopt hot evaporation at silicon substrate back of the body surface deposition Al electrode, the PEDOT:PSS that spin coating one deck is wet on ito glass and be placed on silicon/PEDOT:PSS core-shell nano line surface subsequently, at last sample is placed on solvent evaporated in 120 ℃ the baking oven, has promptly obtained silicon/PEDOT:PSS core-shell nano linear light volt battery.Test obtains the photovoltaic performance (see figure 3) of device, and its photoelectric conversion efficiency can reach more than 6%.
Photoactive layer is N type silicon nanowire array (3-5 μ m) among the present invention, can fully absorb the 300-1100nm sunlight, can reduce the usage quantity of silicon raw material.Simultaneously, the present invention adopts Schottky heterojunction that the organic conductive polymer of the N type silicon/hole transport of core-shell nano line structure forms as photovoltaic junction, it is short that photo-generated carrier in the photoactive layer separates the path, can adopt low-purity, low-quality cheap silicon raw material to make device.And the way that the present invention adopts the organic conductive polymer solution to fill is constructed photovoltaic junction, and technology is simple, can construct large-area device.To sum up, the organic conductive polyalcohol nucleocapsid nano wire photovoltaic cell of the N type silicon/hole transport among the present invention can be realized low cost, high efficiency.
Below only be the introduction of inner characteristic of the present invention being carried out by concrete exemplary applications, the protection range of inventing is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop in the rights protection scope of the present invention.
Claims (10)
1. a silica-based core-shell nano linear light lies prostrate battery, it is characterized in that: it comprises N type silicon substrate, described N type silicon substrate front is formed with silicon nanowire array as photoactive layer, its bottom surface is provided with metal back electrode, the nanowire heterojunction that the organic conductive polymer of conformal covering hole transport forms nucleocapsid structure on the described silicon nanowire array is as photovoltaic junction, and described heterojunction is provided with the ITO top electrode.
2. silica-based core-shell nano linear light volt battery according to claim 1, it is characterized in that: the organic conductive polymer of described hole transport comprises PEDOT:PSS.
3. silica-based core-shell nano linear light volt battery according to claim 1, it is characterized in that: described N type silicon nanowire array and silicon substrate are the monocrystalline or the polysilicon formation of 3-6N level by purity, wherein, the silicon nanowires height is 3-5 μ m, and silicon substrate thickness is 5-200 μ m.
4. silica-based core-shell nano linear light volt battery according to claim 1, it is characterized in that: described metal back electrode comprises the Al electrode layer that covers on N type silicon substrate bottom surface, and described ITO top electrode comprises the ito glass that covers on heterojunction.
5. the preparation technology of a silica-based core-shell nano linear light volt battery, it is characterized in that, this technology is: adopt wet etching to prepare silicon nanowire array in N type silicon substrate front, cover on the silicon nanowire array so that the organic conductive polymer of hole transport is conformal then, form core-shell nano line heterojunction, difference assembling metal back electrode and ITO top electrode on N type silicon substrate bottom surface and heterojunction obtain target product at last.
6. the preparation technology of silica-based core-shell nano linear light volt battery as claimed in claim 5 is characterized in that this technology specifically comprises the steps:
ⅰ, prepare silicon nanowire array in the positive metal assistance chemistry of silicones etching that adopts of N type silicon substrate with catalytic activity;
After ⅱ, the solution of getting the organic conductive polymer of hole transport were filled silicon nanowire array, the solvent in this organic conductive polymer solution was removed in evaporation, forms the conformal organic conductive thin polymer film that covers on the silicon nanowire array;
ⅲ, on N type silicon substrate bottom surface and heterojunction respectively assembling metal back electrode and ITO top electrode, obtain target product.
7. the preparation technology of silica-based core-shell nano linear light volt battery as claimed in claim 6, it is characterized in that, step I is specially: at first form discontinuous silver-colored film in the positive deposited electroless of N type silicon substrate, then by the catalytic action of silver-colored film, form silicon nanowire array at N type silicon substrate front wet etching, remove silver-colored film at last.
8. according to the preparation technology of claim 5 or 6 described silica-based core-shell nano linear lights volt batteries, it is characterized in that: the organic conductive polymer of described hole transport comprises PEDOT:PSS, and described metal back electrode comprises the Al electrode layer that is deposited on the N type silicon substrate bottom surface.
9. according to the preparation technology of claim 5 or 6 described silica-based core-shell nano linear light volt batteries, it is characterized in that the process of assembling ITO top electrode is on heterojunction array:
Get the organic conductive polymer solution that applies hole transport on the conducting surface of ito glass, and be placed on the heterojunction surface, the solvent in this organic conductive polymer solution is removed in evaporation then, and the conducting surface of ito glass is fixedlyed connected with heterojunction.
10. the preparation technology of silica-based core-shell nano linear light volt battery according to claim 6, it is characterized in that: the organic conductive polymer solution of described hole transport comprises that volume ratio is the polar organic solvent and the commercial PEDOT:PSS aqueous solution of 1:3-1:1, and described polar organic solvent is selected from any one in ethanol, acetone and the isopropyl alcohol at least.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030100A (en) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | Method for preparing sub-wavelength silicon nano-wire array with antireflection characteristic |
| CN103647016A (en) * | 2013-12-12 | 2014-03-19 | 中国科学院半导体研究所 | Preparation method for thermo-electric device based on core shell structure |
| CN104600196A (en) * | 2015-01-09 | 2015-05-06 | 浙江大学 | Preparation method of conductive organic matter/silicon nanowire solar cell and product thereof |
| WO2015096028A1 (en) * | 2013-12-24 | 2015-07-02 | 香港城市大学 | Solar cell and manufacturing method therefor |
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| CN108831955A (en) * | 2018-06-08 | 2018-11-16 | 苏州宝澜环保科技有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN109467159A (en) * | 2018-11-29 | 2019-03-15 | 长春理工大学 | Self-powered semiconductor photoelectrocatalysielectrode device with WSA sensing structures |
| CN118064899A (en) * | 2024-02-02 | 2024-05-24 | 西安电子科技大学 | Full spectrum silicon-based composite photo-anode array and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132028A (en) * | 2006-08-25 | 2008-02-27 | 通用电气公司 | Single conformal junction nanowire photovoltaic devices |
| CN101257094A (en) * | 2008-03-31 | 2008-09-03 | 北京师范大学 | Silicon nanometer wire solar cell apparatus |
| CN101960611A (en) * | 2008-02-29 | 2011-01-26 | 国际商业机器公司 | Photovoltaic devices with high-aspect-ratio nanostructures |
| CN102263204A (en) * | 2011-07-20 | 2011-11-30 | 苏州大学 | Organic-inorganic hybridization solar battery and manufacturing method thereof |
-
2011
- 2011-08-02 CN CN 201110219803 patent/CN102280588B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132028A (en) * | 2006-08-25 | 2008-02-27 | 通用电气公司 | Single conformal junction nanowire photovoltaic devices |
| CN101960611A (en) * | 2008-02-29 | 2011-01-26 | 国际商业机器公司 | Photovoltaic devices with high-aspect-ratio nanostructures |
| CN101257094A (en) * | 2008-03-31 | 2008-09-03 | 北京师范大学 | Silicon nanometer wire solar cell apparatus |
| CN102263204A (en) * | 2011-07-20 | 2011-11-30 | 苏州大学 | Organic-inorganic hybridization solar battery and manufacturing method thereof |
Non-Patent Citations (3)
| Title |
|---|
| HONG-JHANG SYU ET.AL: "Silicon Nanowire/Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) Core-Sheath Heterojunction Solar Cells", 《CLEO: 2011-LASER SCIENCE TO PHOTONIC APPLICATIONS》 * |
| SHU-CHIA SHIU等: "Silicon Nanowire/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Heterojuntion Solar Cells", 《PROC. SPIE 7772, NEXT GENERATION (NANO) PHOTONIC AND CELL TECHNOLOGIES FOR SOLAR ENERGY CONVERSION》 * |
| ZHANG FT ET. AL: "Efficient Hybrid Photovoltaic Devices Based on Poly(3-hexylthiophene) and Silicon Nanostructures", 《CHEMISTRY OF MATERIALS》 * |
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| CN103030100B (en) * | 2013-01-09 | 2015-10-21 | 华北电力大学 | A kind of preparation method with the sub-wavelength silicon nanowire array of antireflection characteristic |
| CN103030100A (en) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | Method for preparing sub-wavelength silicon nano-wire array with antireflection characteristic |
| CN103647016A (en) * | 2013-12-12 | 2014-03-19 | 中国科学院半导体研究所 | Preparation method for thermo-electric device based on core shell structure |
| CN103647016B (en) * | 2013-12-12 | 2016-04-20 | 中国科学院半导体研究所 | Based on the thermoelectric device preparation method of nucleocapsid structure |
| WO2015096028A1 (en) * | 2013-12-24 | 2015-07-02 | 香港城市大学 | Solar cell and manufacturing method therefor |
| CN104600196B (en) * | 2015-01-09 | 2017-08-01 | 浙江大学 | A kind of preparation method of conductive organic matter/silicon nanometer line solar battery and products thereof |
| CN104600196A (en) * | 2015-01-09 | 2015-05-06 | 浙江大学 | Preparation method of conductive organic matter/silicon nanowire solar cell and product thereof |
| CN105720197A (en) * | 2016-02-19 | 2016-06-29 | 暨南大学 | Self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and preparation method therefor |
| CN105720197B (en) * | 2016-02-19 | 2018-10-09 | 暨南大学 | It is a kind of to respond silicon-based hybrid heterojunction photovoltaic sensor and preparation method thereof from driving wide spectrum |
| CN108831955A (en) * | 2018-06-08 | 2018-11-16 | 苏州宝澜环保科技有限公司 | A kind of silicon solar cell and preparation method thereof |
| CN108831955B (en) * | 2018-06-08 | 2020-08-11 | 海门名驰工业设计有限公司 | Silicon solar cell and preparation method thereof |
| CN109467159A (en) * | 2018-11-29 | 2019-03-15 | 长春理工大学 | Self-powered semiconductor photoelectrocatalysielectrode device with WSA sensing structures |
| CN109467159B (en) * | 2018-11-29 | 2021-10-01 | 长春理工大学 | Self-powered semiconductor photoelectric catalytic device with WSA (Wireless sensor array) position sensitive structure |
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