CN109935698B - In2Se3Organic solar cell as hole transport layer and method for manufacturing the same - Google Patents

In2Se3Organic solar cell as hole transport layer and method for manufacturing the same Download PDF

Info

Publication number
CN109935698B
CN109935698B CN201910253985.1A CN201910253985A CN109935698B CN 109935698 B CN109935698 B CN 109935698B CN 201910253985 A CN201910253985 A CN 201910253985A CN 109935698 B CN109935698 B CN 109935698B
Authority
CN
China
Prior art keywords
transport layer
hole transport
active layer
solar cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910253985.1A
Other languages
Chinese (zh)
Other versions
CN109935698A (en
Inventor
於黄忠
王键鸣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201910253985.1A priority Critical patent/CN109935698B/en
Publication of CN109935698A publication Critical patent/CN109935698A/en
Application granted granted Critical
Publication of CN109935698B publication Critical patent/CN109935698B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention discloses an In2Se3The organic solar cell is a hole transport layer and the preparation method thereof, and the organic solar cell comprises an anode substrate, a hole transport layer, an active layer, an electron transport layer and a cathode layer which are sequentially stacked; the hole transport layer is In2Se3. The organic solar cell prepared by the invention uses In with high conductivity and high light transmittance2Se3First, In2Se3The organic solar cell has higher conductivity, can effectively improve the charge transmission efficiency of the organic solar cell, and reduces the sensitivity to the thickness of a thin film; second In2Se3The light transmittance is high, so that the active layer can effectively utilize incident light; finally, In the present invention2Se3The powder is mixed with deionized water and isopropanol to prepare solution, and then spin-coating is carried out to form the film, so that the environment-friendly effect is achieved.

Description

In2Se3Organic solar cell as hole transport layer and method for manufacturing the same
Technical Field
The invention relates to the field of solar cells, In particular to In2Se3An organic solar cell which is a hole transport layer and a method for manufacturing the same.
Background
The organic solar cell has attracted attention due to the advantages of wide raw material source, easy process, easy physical and chemical modification, various cell device structures, low cost, environmental friendliness and the like. The energy conversion efficiency reported by the organic solar cell is close to 15%, and the organic solar cell becomes a research hotspot of a new generation of solar cells.
The working principle of the organic solar cell is as follows: (1) light irradiates the active layer through the ITO electrode, and the active layer absorbs photons to generate excitons; exciton diffusion to the donor/acceptor interface; (2) excitons in the acceptor transfer holes to the donor, and excitons in the donor transfer electrons to the acceptor, thereby realizing charge separation; (3) electrons and holes diffuse to the cathode and the anode along the acceptor and the donor respectively; (4) the electrons and holes are collected at the electrode/active layer interface by the cathode and anode, respectively, and a photocurrent and a photovoltage are generated therefrom.
The interface layer material includes an electron transport layer material and a hole transport layer material. Current hole transport layer material developmentRelatively backward, only PEDOT, PSS, is commercially available. The strong acidity and hydrophilicity of PEDOT, PSS, can have great influence on the stability of the device. In addition, the light transmittance of the PEDOT, the insulativity of the PSS and the strong anisotropy of the PEDOT limit the transmission and collection of charges, thereby limiting the improvement of the photoelectric conversion efficiency of the cell. Attempts have been made to replace PEDOT: PSS with other materials, such as polymers, small molecule organic materials, transition metal oxides, etc.; the Hou subject group uses hydrochloric acid to dope PANI, so that HAPAN with high conductivity is prepared, and the HAPAN is used as a hole transport layer, so that a high-efficiency battery is obtained; the Heeger subject group uses a conjugated polyelectrolyte CPEPh-Na as a hole transport layer, the material is neutral, the work function is-5.2 eV, the interface barrier between ITO and an active layer is effectively reduced, and the battery performance is improved; metal oxide WO used in Han subject group3The surface of the ITO is effectively smoothed, the parallel resistance of the battery is obviously improved, the charge recombination probability under illumination is reduced, and the filling factor is improved, so that the efficiency of the battery is improved.
Disclosure of Invention
Based on this, the present invention provides In2Se3An organic solar cell which is a hole transport layer and a method for manufacturing the same.
The purpose of the invention is realized by the following technical scheme.
In2Se3The organic solar cell is a hole transport layer and comprises an anode substrate, a hole transport layer, an active layer, an electron transport layer and a cathode layer, wherein the hole transport layer is In2Se3。
Further, the anode substrate is selected from indium tin oxide glass (ITO).
Further, the thickness of the hole transport layer is 20-30 nm.
Further, the active layer is P3HT/PCBM, and the thickness of the active layer is 150-200 nm.
Further, the electron transport layer is Ca or PFNBr, and the thickness of the electron transport layer is 5-8nm
Further, the cathode layer is Al, and the thickness of the cathode layer is 80-85 nm.
Another object of the present invention is to provide In2Se3A method of making an organic solar cell that is a hole transport layer, comprising the steps of:
cleaning an anode substrate, and carrying out surface treatment on the surface of the anode substrate;
step two, spin-coating a hole transport layer and an active layer on the surface of the anode layer subjected to the surface treatment in the step one in sequence; the hole transport layer is In2Se3；
Thirdly, sequentially evaporating an electron transmission layer and a cathode layer on the surface of the active layer in the second step;
after the above-mentioned technological process is completed, the In is made2Se3An organic solar cell that is a hole transport layer;
further, in the first step, the anode substrate treatment includes: firstly, ultrasonic cleaning is sequentially carried out for 15-20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol respectively; then drying in a vacuum drying oven at 80-90 ℃; and finally, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate for 13-15 minutes.
Further, In the second step, the hole transport layer is In2Se3In is2Se3Dissolving the powder in a mixed solution of isopropanol and deionized water to prepare a mixed solution with the mass concentration of 0.9-1 mg/ml; after the mixed solution is subjected to ultrasonic treatment for 4 to 5 hours, centrifuging the mixed solution for 4 to 5 minutes at the speed of 7000-plus 8000r.p.m, and taking out supernatant; centrifuging the supernatant at the same speed for 13-15min, and taking out the supernatant to obtain the desired In2Se3And (3) solution. In is mixed with2Se3The solution is coated on the surface of the treated anode substrate in a rotating way at 3000-3500rpm for 35-40 s; and annealing the anode substrate which is spin-coated with the indium selenide, wherein the temperature is 280-300 ℃, and the time is 45-60 minutes. Preferably, the volume fraction of isopropanol in the mixed solution of isopropanol and deionized water is 30-40%.
In the second step, the active layer is P3 HT/PCBM: dissolving P3HT and PCBM in dichlorobenzene, dissolving P3HT and PCBM in o-dichlorobenzene, wherein the mass ratio of P3HT to PCBM is 0.8-1.2:1, the concentration of P3HT is 15-25mg/ml, and stirring for 12-24 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 13-15 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at 850-; and after the active layer is spin-coated, the active layer is placed for 2-3 hours and naturally dried, and then annealing treatment is carried out at 125-150 ℃ for 7-10 minutes.
In of the present invention2Se3Organic solar cell as hole transport layer by using high conductivity, high light transmittance In2Se3(ii) a First, In2Se3The organic solar cell has higher conductivity, can effectively improve the charge transmission efficiency of the organic solar cell, and reduces the sensitivity to the thickness of a thin film; second In2Se3The light transmittance is high, so that the active layer can effectively utilize incident light; finally, In the present invention2Se3The powder is dissolved In the mixed solution of deionized water and isopropanol and then spin-coated to form a film, compared with In the prior art2Se3Compared with various high-temperature and high-pressure methods commonly used in film forming, the method is more environment-friendly. Using In2Se3As the hole transport layer, under appropriate conditions, photoelectric conversion efficiency comparable to that of conventional PEDOT PSS as the hole transport layer can be obtained, and In is used In addition to the above advantages2Se3The strong acidity and hydrophilicity of PEDOT (PSS) can be prevented from influencing the service life of the solar cell, and In2Se3The band gap can be changed along with the thickness of the film, and the like, and the application prospect is expected.
Drawings
FIG. 1 shows In according to the present invention2Se3The structure schematic diagram of the organic solar cell is a hole transport layer;
FIG. 2 shows In2Se3A flow chart of a method for manufacturing an organic solar cell device which is a hole transport layer;
fig. 3 is a graph of current density versus voltage for the solar devices of example 1 and comparative example.
Detailed description of the preferred embodiments
The following further describes embodiments of the present invention in conjunction with the following examples and figures, but the practice of the present invention is not limited thereto.
The present invention provides a method for producing In2Se3An organic solar cell which is a hole transport layer includes an anode substrate 01, a hole transport layer 02, an active layer 03, an electron transport layer 04, and a cathode layer 05 as shown in fig. 1.
In as mentioned above2Se3The process for fabricating an organic solar cell that is a hole transport layer is shown in fig. 2 and comprises the following steps:
step 1, cleaning an anode substrate ITO;
step 2, carrying out surface treatment on the cleaned and dried ITO surface of the anode substrate;
step 3, spin-coating In on the ITO surface processed In the step 22Se3Carrying out post-annealing treatment on the solution to prepare a hole transport layer;
step 4, spin coating on the surface of the hole transport layer to prepare an active layer;
step 5, evaporating an electron transport layer Ca on the surface of the active layer;
step 6, evaporating a cathode layer Al on the surface of the electron transport layer;
in is obtained after the above steps are finished2Se3An organic solar cell which is a hole transport layer.
Example 1
In this example2Se3The organic solar cell device structure of the hole transport layer is as follows: ITO/In2Se3/P3HT:PCBM/Ca/Al。
In as mentioned above2Se3The preparation process flow of the organic solar cell serving as the hole transport layer is as follows:
step 1, ultrasonic cleaning is sequentially carried out for 20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol respectively; then drying in a vacuum drying oven at 80 ℃;
step 2, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate (ITO) for 13 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO, and simultaneously can improve the oxygen vacancy on the surface of the ITO and improve the work function of the surface of the ITO;
step 3, spin-coating In on the ITO surface processed In the step 22Se3A solution; said In2Se3The solution preparation process comprises: in is mixed with2Se3The powder is dissolved in a mixed solution of isopropanol and deionized water, and the volume fraction of the isopropanol is 30 percent, so as to prepare a mixed solution with the mass concentration of 1 mg/ml. And (3) carrying out ultrasonic treatment on the mixed solution for 5 hours, centrifuging the mixed solution for 5min at the speed of 8000r.p.m, and taking out a supernatant. Centrifuging the supernatant at the same speed for 15min, and taking out the supernatant to obtain the desired In2Se3And (3) solution. In is mixed with2Se3Spin-coating the solution on the surface of the treated anode substrate at 3500rpm for 40 s; annealing the anode substrate coated with indium selenide in a spinning mode for 1 hour at the temperature of 300 ℃ to form a hole transport layer, wherein the thickness of the hole transport layer is 30 nm;
step 4, spin coating an active layer solution on the surface of the hole transport layer; the active layer is P3 HT/PCBM. The preparation process of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 1:1 and a P3HT concentration of 20mg/ml, and stirring for 12 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 13 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotating speed of 1000rpm for 40s, wherein the thickness of the active layer is 150 nm; after the active layer is spin-coated, the active layer is placed for 3 hours to be naturally dried, and then annealing treatment is carried out for 7 minutes at 125 ℃;
step 5, evaporating an electron transport layer Ca on the surface of the active layer, wherein the thickness of the electron transport layer Ca is 5 nm;
step 6, evaporating a cathode layer Al on the surface of the electron transport layer, wherein the thickness of the cathode layer Al is 80 nm;
in is obtained after the above steps are finished2Se3An organic solar cell which is a hole transport layer.
Comparative example
The comparative example was prepared under substantially the same conditions as example 1 except that the hole transport layer material was PEDOT: PSS.
FIG. 3 shows In of example 12Se3PSS is the current density of the organic solar cell of the hole transport layer and the organic solar cell of the comparative example which takes PEDOT; wherein the solid line is the current density versus voltage curve of the organic solar cell (structure: ITO/PEDOT: PSS/P3HT: PCBM/Ca/Al) having PEDOT: PSS as the hole transport layer In the comparative example, and the dotted line is In of example 12Se3Organic solar cell (structure: ITO/In) as hole transport layer2Se3Current density versus voltage curve of/P3 HT: PCBM/Ca/Al); as can be seen from FIG. 3, the open circuit voltage (V) of the organic solar cell using PEDOT PSS as the hole transport layer in the comparative exampleoc) 0.61V, short-circuit current density (J)sc) Is 9.36mA/cm2(ii) a In of example 12Se3Organic solar cell as hole transport layer and its open circuit voltage (V)oc) 0.57V, short-circuit current density (J)sc) Is 10.74mA/cm2. This indicates In2Se3The high conductivity of the conductive layer can effectively improve the charge transfer efficiency, thereby improving the short-circuit current density.
Example 2
In this example 22Se3The organic solar cell device structure of the hole transport layer is as follows: ITO/In2Se3/P3HT:PCBM/Ca/Al。
In as mentioned above2Se3The preparation process flow of the organic solar cell serving as the hole transport layer is as follows:
step 1, ultrasonic cleaning is sequentially carried out on the raw materials by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol for 15 minutes respectively; drying in a vacuum drying oven at 80 deg.C;
step 2, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate (ITO) for 15 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO, and simultaneously can improve oxygen vacancies on the surface of the ITO and improve the work function of the surface of the ITO;
step 3, spin-coating In on the ITO surface processed In the step 22Se3A solution; said In2Se3The solution preparation process comprises: in is mixed with2Se3The powder is dissolved in a mixed solution of isopropanol and deionized water, and the volume fraction of the isopropanol is 40 percent, so as to prepare a mixed solution with the mass concentration of 0.9 mg/ml. The mixture was sonicated for 4 hours, centrifuged at 7000r.p.m for 4min and the supernatant was removed. Centrifuging the supernatant at the same speed for 13min, and taking out the supernatant to obtain the desired In2Se3And (3) solution. In is mixed with2Se3Spin-coating the solution on the surface of the treated anode substrate at 3000rpm for 35 s; annealing the anode substrate coated with indium selenide in a spinning mode for 45 minutes at 250 ℃ to form a hole transport layer, wherein the thickness of the hole transport layer is 25 nm;
step 4, spin coating an active layer solution on the surface of the hole transport layer; the active layer is P3 HT/PCBM. The preparation process of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 0.8:1 and a P3HT concentration of 25mg/ml, and stirring for 24 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 15 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotating speed of 850rpm for 35s, wherein the thickness of the active layer is 200 nm; after the active layer is spin-coated, the active layer is placed for 2 hours and naturally dried, and then annealing treatment is carried out for 7 minutes at 150 ℃;
step 5, evaporating an electron transport layer Ca on the surface of the active layer, wherein the thickness of the electron transport layer Ca is 8 nm;
6, evaporating a cathode layer Al on the surface of the electron transport layer, wherein the thickness of the cathode layer Al is 85 nm;
in is obtained after the above steps are finished2Se3An organic solar cell which is a hole transport layer.
Example 3
In this example 32Se3The organic solar cell device structure of the hole transport layer is as follows: ITO/In2Se3/P3HT:PCBM/Ca/Al。
In as mentioned above2Se3The preparation process flow of the organic solar cell serving as the hole transport layer is as follows:
step 1, ultrasonic cleaning is sequentially carried out on the raw materials by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol for 17.5 minutes respectively; drying in a vacuum drying oven at 85 deg.C;
step 2, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate (ITO) for 14 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO, and simultaneously can improve the oxygen vacancy on the surface of the ITO and improve the work function of the surface of the ITO;
step 3, spin-coating In on the ITO surface processed In the step 22Se3A solution; said In2Se3The solution preparation process comprises: in is mixed with2Se3The powder is dissolved in a mixed solution of isopropanol and deionized water, the volume fraction of the isopropanol is 35%, and the mixed solution is prepared into a mixed solution with the mass concentration of 0.95 mg/ml. The mixture was sonicated for 4.5 hours, centrifuged at 7500r.p.m for 4min and the supernatant was removed. Centrifuging the supernatant at the same speed for 14min, and taking out the supernatant to obtain the desired In2Se3And (3) solution. In is mixed with2Se3Spin-coating the solution on the surface of the treated anode substrate at 3250rpm for 37.5 s; annealing the anode substrate coated with indium selenide in a spinning mode for 52.5 minutes at the temperature of 300 ℃ to form a hole transport layer, wherein the thickness of the hole transport layer is 27.5 nm;
step 4, spin coating an active layer solution on the surface of the hole transport layer; the active layer is P3 HT/PCBM. The preparation process of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 1.2:1 and a concentration of P3HT of 15mg/ml, and stirring for 18 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 14 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotating speed of 925rpm for 37.5s and the thickness of the active layer of 175 nm; after the active layer is spin-coated, the active layer is placed for 2.5 hours to be naturally dried, and then annealing treatment is carried out for 7 minutes at 137 ℃;
step 5, evaporating an electron transport layer Ca on the surface of the active layer, wherein the thickness of the electron transport layer Ca is 6.5 nm;
step 6, evaporating a cathode layer Al on the surface of the electron transport layer, wherein the thickness of the cathode layer Al is 82.5 nm;
in is obtained after the above steps are finished2Se3An organic solar cell which is a hole transport layer.
Example 4
In this example 42Se3The organic solar cell device structure of the hole transport layer is as follows: ITO/In2Se3/P3HT:PCBM/Ca/Al。
In as mentioned above2Se3The preparation process flow of the organic solar cell serving as the hole transport layer is as follows:
step 1, ultrasonic cleaning is sequentially carried out on the raw materials by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol for 15 minutes respectively; drying in a vacuum drying oven at 90 deg.C;
step 2, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate (ITO) for 15 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO, and simultaneously can improve oxygen vacancies on the surface of the ITO and improve the work function of the surface of the ITO;
step 3, spin-coating In on the ITO surface processed In the step 22Se3A solution; said In2Se3The solution preparation process comprises: in is mixed with2Se3The powder is dissolved in a mixed solution of isopropanol and deionized water, and the volume fraction of the isopropanol is 40 percent, so as to prepare a mixed solution with the mass concentration of 0.9 mg/ml. The mixture was sonicated for 4 hours, centrifuged at 7000r.p.m for 4min and the supernatant was removed. Centrifuging the supernatant at the same speed for 13min, and taking out the supernatant to obtain the desired In2Se3And (3) solution. In is mixed with2Se3Spin coating the solution on the surface of the treated anode substrate at 4500rpm for 35 s; annealing the anode substrate coated with indium selenide in a spinning mode for 45 minutes at 300 ℃ to form a hole transport layer, wherein the thickness of the hole transport layer is 20 nm;
step 4, spin coating an active layer solution on the surface of the hole transport layer; the active layer is P3 HT/PCBM. The preparation process of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 0.8:1 and a P3HT concentration of 25mg/ml, and stirring for 24 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 15 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotating speed of 850rpm for 40s, wherein the thickness of the active layer is 150 nm; after the active layer is spin-coated, the active layer is placed for 2 hours and naturally dried, and then annealing treatment is carried out for 7 minutes at 150 ℃;
step 5, evaporating an electron transport layer Ca on the surface of the active layer, wherein the thickness of the electron transport layer Ca is 8 nm;
6, evaporating a cathode layer Al on the surface of the electron transport layer, wherein the thickness of the cathode layer Al is 85 nm;
in is obtained after the above steps are finished2Se3An organic solar cell which is a hole transport layer.
The following table 1 shows the comparison of the parameters of the organic solar cells prepared in examples 1 to 4 and comparative example.
TABLE 1 comparison of the parameters of examples 1-4 with comparative examples
Figure BDA0002013146880000081
From Table 1, it can be found that the short-circuit current density (J) of example 1sc) From 9.36mA/cm2The temperature is increased to 10.74mA/cm2The open circuit voltage (Voc) and Fill Factor (FF) were slightly lower than the comparative example, as was the case with the remaining examples, and the final photoelectric conversion efficiency was comparable to the comparative example. This illustrates In2Se3The organic solar cell which is the hole transport layer has stronger transport capability to carriers, thereby realizing energy conversion efficiency equivalent to that of the organic solar cell which takes PEDOT (PSS) as the hole transport layer. And the strong acidity and the hydrophilicity of the PEDOT, namely PSS, which is used as a hole transport layer can greatly influence the stability of a device, so that the service life of the solar cell is low. In addition, PEDOT, PSS has low light transmittance, and PSS insulation and PEDOT strong anisotropyThe opposite properties limit the transfer and collection of charge, thereby limiting the improvement in the photoelectric conversion efficiency of the cell. And In2Se3The material has advantages in conductivity, service life and light transmittance; in according to literature reports2Se3The material has a band gap that changes due to its film thickness, which makes its use more likely. And In the invention, In is spin-coated by solution2Se3The selected solution has higher safety and is more traditional In2Se3The deposition film-forming method is more environment-friendly and convenient.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various changes and modifications without departing from the spirit of the present invention, and these changes and modifications are within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (4)

1. In2Se3The organic solar cell is characterized by comprising an anode substrate, a hole transport layer, an active layer, an electron transport layer and a cathode layer which are sequentially stacked, wherein the hole transport layer is In2Se3(ii) a The active layer is P3HT PCBM, and the thickness of the active layer is 150-200 nm; the electron transport layer is Ca or PFNBr, and the thickness of the electron transport layer is 5-8 nm; the thickness of the hole transport layer is 20-30 nm; the organic solar cell is prepared by the following steps:
cleaning an anode substrate, and carrying out surface treatment on the surface of the anode substrate; the anodic substrate treatment comprises: firstly, ultrasonic cleaning is sequentially carried out for 15-20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol respectively; then drying in a vacuum drying oven at 80-90 ℃; finally, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate for 13-15 minutes;
step two, spin-coating air on the surface of the anode substrate subjected to the surface treatment in the step one in sequenceA hole transport layer, an active layer; the preparation of the hole transport layer comprises: in is mixed with2Se3Dissolving the powder In a mixed solution of isopropanol and deionized water, wherein the volume fraction of the isopropanol is 30-40%, preparing a mixed solution with the mass concentration of 0.9-1mg/ml, carrying out ultrasonic treatment on the mixed solution for 4-5 hours, centrifuging the mixed solution at the speed of 7000-8000r.p.m for 4-5min, taking out the supernatant, centrifuging the supernatant at the same speed for 13-15min, and taking out the supernatant, thus obtaining the required In2Se3A solution; in is mixed with2Se3The solution is coated on the surface of the treated anode substrate in a rotating way at the rotating speed of 3000-3500r.p.m for 35-40 s; annealing the anode substrate which is spin-coated with indium selenide, wherein the temperature is 280-300 ℃, and the time is 45-60 minutes;
thirdly, sequentially evaporating an electron transmission layer and a cathode layer on the surface of the active layer in the second step; the preparation of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 0.8-1.2:1 and a concentration of P3HT of 15-25mg/ml, and stirring for 12-24 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 13-15 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotation speed of 850-; after the active layer is spin-coated, the active layer is placed for 2-3 hours to be naturally dried, and then annealing treatment is carried out at 125-150 ℃ for 7-10 minutes;
after the above-mentioned technological process is completed, the In is made2Se3An organic solar cell which is a hole transport layer.
2. The organic solar cell of claim 1, wherein the anode substrate is indium tin oxide glass.
3. The organic solar cell of claim 1, wherein the cathode layer is aluminum and has a thickness of 80-85 nm.
4. The method of any one of claims 1 to 3, wherein In is2Se3A method for producing an organic solar cell as a hole transport layer, comprisingThe following steps:
cleaning an anode substrate, and carrying out surface treatment on the surface of the anode substrate; the anodic substrate treatment comprises: firstly, ultrasonic cleaning is sequentially carried out for 15-20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol respectively; then drying in a vacuum drying oven at 80-90 ℃; finally, carrying out plasma surface treatment on the surface of the cleaned and dried anode substrate for 13-15 minutes;
step two, spin-coating a hole transport layer and an active layer on the surface of the anode substrate subjected to the surface treatment in the step one in sequence; the preparation of the hole transport layer comprises: in is mixed with2Se3Dissolving the powder In a mixed solution of isopropanol and deionized water, wherein the volume fraction of the isopropanol is 30-40%, preparing a mixed solution with the mass concentration of 0.9-1mg/ml, carrying out ultrasonic treatment on the mixed solution for 4-5 hours, centrifuging the mixed solution at the speed of 7000-8000r.p.m for 4-5min, taking out the supernatant, centrifuging the supernatant at the same speed for 13-15min, and taking out the supernatant, thus obtaining the required In2Se3A solution; in is mixed with2Se3The solution is coated on the surface of the treated anode substrate in a rotating way at the rotating speed of 3000-3500r.p.m for 35-40 s; annealing the anode substrate which is spin-coated with indium selenide, wherein the temperature is 280-300 ℃, and the time is 45-60 minutes;
thirdly, sequentially evaporating an electron transmission layer and a cathode layer on the surface of the active layer in the second step; the preparation of the active layer comprises the following steps: dissolving P3HT and PCBM in o-dichlorobenzene at a mass ratio of P3HT to PCBM of 0.8-1.2:1 and a concentration of P3HT of 15-25mg/ml, and stirring for 12-24 hours; carrying out plasma surface treatment on the surface of the annealed hole transport layer for 13-15 minutes; finally, spin-coating an active layer solution on the surface of the hole transport layer at the rotation speed of 850-; after the active layer is spin-coated, the active layer is placed for 2-3 hours to be naturally dried, and then annealing treatment is carried out at 125-150 ℃ for 7-10 minutes;
after the above-mentioned technological process is completed, the In is made2Se3An organic solar cell which is a hole transport layer.
CN201910253985.1A 2019-03-30 2019-03-30 In2Se3Organic solar cell as hole transport layer and method for manufacturing the same Active CN109935698B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910253985.1A CN109935698B (en) 2019-03-30 2019-03-30 In2Se3Organic solar cell as hole transport layer and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910253985.1A CN109935698B (en) 2019-03-30 2019-03-30 In2Se3Organic solar cell as hole transport layer and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN109935698A CN109935698A (en) 2019-06-25
CN109935698B true CN109935698B (en) 2020-11-24

Family

ID=66988792

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910253985.1A Active CN109935698B (en) 2019-03-30 2019-03-30 In2Se3Organic solar cell as hole transport layer and method for manufacturing the same

Country Status (1)

Country Link
CN (1) CN109935698B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111682111B (en) * 2020-05-20 2022-03-29 华南理工大学 PBDB-T ITIC alpha-In2Se3Organic solar cell as active layer and method for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904224A (en) * 2014-03-05 2014-07-02 宁波大学 Organic photovoltaic cell based on inorganic quantum dot and preparing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904224A (en) * 2014-03-05 2014-07-02 宁波大学 Organic photovoltaic cell based on inorganic quantum dot and preparing method

Also Published As

Publication number Publication date
CN109935698A (en) 2019-06-25

Similar Documents

Publication Publication Date Title
Zhang et al. Efficient and ultraviolet durable planar perovskite solar cells via a ferrocenecarboxylic acid modified nickel oxide hole transport layer
Wang et al. Low temperature solution processed planar heterojunction perovskite solar cells with a CdSe nanocrystal as an electron transport/extraction layer
Zhao et al. Simplification of device structures for low-cost, high-efficiency perovskite solar cells
Liu et al. Novel efficient C60-based inverted perovskite solar cells with negligible hysteresis
CN109904326B (en) Organic solar cell with MXene doped PEDOT (PSS) as anode modification layer material and preparation method thereof
CN110335945B (en) Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof
CN111883659B (en) Efficient ternary organic solar cell prepared based on gradual deposition method
CN108281553B (en) Tungsten oxide nanorod coated with poly (3, 4-ethylenedioxythiophene), and preparation method and application thereof
Yoon et al. Improving the performance and reliability of inverted planar perovskite solar cells with a carbon nanotubes/PEDOT: PSS hybrid hole collector
Guo et al. Improvement of stability of ZnO/CH 3 NH 3 PbI 3 bilayer by aging step for preparing high-performance perovskite solar cells under ambient conditions
CN111682111B (en) PBDB-T ITIC alpha-In2Se3Organic solar cell as active layer and method for manufacturing the same
CN109935697B (en) In2Se3Organic solar cell with PEDOT (PEDOT-PSS) -doped hole transport layer and preparation method thereof
CN106410037A (en) Small organic molecule donor material based double-junction solar cell device and preparation method thereof
CN114784193A (en) Organic photoelectric device based on metal-induced organic interface layer and preparation method thereof
CN108767112B (en) BiI with different hole transport layers3Solar cell and preparation method thereof
CN113097388B (en) Perovskite battery based on composite electron transport layer and preparation method thereof
Xie et al. Highly air-stable and efficient CH3NH3PbI3 solar cells enhanced by ZnO-embedded PCBM electron transport layers
CN109935698B (en) In2Se3Organic solar cell as hole transport layer and method for manufacturing the same
CN113224242A (en) Organic solar cell preparation method for improving shape thermal stability of active layer
CN109216563B (en) Cs (volatile organic Compounds)2SnI6Doped organic solar cell and preparation method thereof
CN109301070B (en) Bi2OS2Doped organic solar cell and preparation method thereof
CN109244241B (en) CSPbBr3Doped organic solar cell and preparation method thereof
KR101149782B1 (en) Inverted organic photovoltaic cells and manufacturing method thereof
CN113611800A (en) All-small-molecule organic solar cell based on novel additive and preparation method thereof
CN113707809A (en) Organic solar device electron transport layer composition, organic solar device and preparation method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant