CN110890628B - Differential end-fire antenna based on SIW structure - Google Patents
Differential end-fire antenna based on SIW structure Download PDFInfo
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- CN110890628B CN110890628B CN201911029228.2A CN201911029228A CN110890628B CN 110890628 B CN110890628 B CN 110890628B CN 201911029228 A CN201911029228 A CN 201911029228A CN 110890628 B CN110890628 B CN 110890628B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/50—Feeding or matching arrangements for broad-band or multi-band operation
Abstract
The invention discloses a differential endfire antenna based on a SIW structure, which comprises a dielectric substrate, and an SIW transmission line, a chute antenna and a differential feed module which are printed on the dielectric substrate; the SIW transmission line is provided with a short-circuit end and an open-circuit end, and the chute antenna is connected with the open-circuit end of the SIW transmission line to form an end-fire antenna based on the SIW; the differential feed module is used for carrying out differential feed on the SIW-based end-fire antenna. The chute antenna comprises two right-angle trapezoidal metal surfaces; each of the right trapezoid metal surfaces has four rectangular slits therein. The SIW transmission line includes three rows of metal vias disposed in a dielectric substrate a in a U-shape. The differential feed module comprises two feed microstrip lines and a probe. The feeding mode of the invention is converted from the differential microstrip to the differential SIW, and can realize wider matching bandwidth. In addition, the method has the characteristics of good common mode rejection effect, wide matching bandwidth, high gain, low side lobe, low cross polarization and the like; meanwhile, the method has the advantage of low profile and is easy to integrate with a planar circuit.
Description
Technical Field
The invention relates to the field of wireless communication, in particular to a differential endfire antenna based on a SIW (substrate integrated waveguide) structure.
Background
In modern wireless communication systems, the substrate integrated waveguide has the advantages of low profile, low insertion loss, easy integration with planar circuits, and the like, and is widely applied to design microwave devices. The balanced circuit technology can suppress transmission of common mode signals such as external noise and system internal noise, and is therefore increasingly applied to design of microwave circuits. An antenna is an indispensable transmitting and receiving device in a wireless communication system. The differential antenna can be directly connected with the balance circuit, so that balun, loss and occupied space are avoided. The end-fire antenna has the advantages of high gain, low standing-wave ratio, wide matching bandwidth and the like, and has a stable radiation effect in the working bandwidth. In order to meet the requirements of small volume, strong anti-interference capability and the like of wireless communication equipment, the differential end-fire antenna based on the SIW structure has important significance for the development of a wireless communication system.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a differential end-fire antenna based on SIW structure, which has the characteristics of good common mode rejection effect, wide matching bandwidth, high gain, low side lobe, low cross polarization, etc., in order to overcome the defects of the prior art; meanwhile, the method has the advantage of low profile and is easy to integrate with a planar circuit.
In order to solve the technical problems, the invention adopts the technical scheme that:
a differential endfire antenna based on a SIW structure comprises a dielectric substrate, and a SIW transmission line, a skewed slot antenna and a differential feed module which are printed on the dielectric substrate.
The SIW transmission line is provided with a short-circuit end and an open-circuit end, and the skewed slot antenna is connected with the open-circuit end of the SIW transmission line to form an end-fire antenna based on the SIW. The differential feed module is used for carrying out differential feed on the SIW-based end-fire antenna.
The medium substrate is divided into three layers, namely an upper layer medium substrate, a middle layer medium substrate and a lower layer medium substrate from top to bottom. The middle layer dielectric substrate comprises a dielectric substrate A and a dielectric substrate B which are arranged in parallel. The dielectric substrate A is the same as the upper dielectric substrate and the lower dielectric substrate in size and is provided with an upper common metal surface and a lower common metal surface.
The SIW transmission line is arranged in the dielectric substrate A, and the oblique slot antenna is positioned on the dielectric substrate B.
The three-layer medium substrate has a symmetry axis N-N' parallel to the length direction. The chute antenna comprises two right-angle trapezoidal metal surfaces. The two right-angle trapezoid metal surfaces are respectively arranged on the upper surface and the lower surface of the dielectric substrate B and are symmetrical about a symmetry axis N-N'. Each right-angle trapezoid metal surface is internally provided with at least one rectangular gap which is vertical to the height direction of the right-angle trapezoid metal surface.
The upper bottom edge, the lower bottom edge and the right-angle side edge of each right-angle trapezoid metal surface are respectively coincided with the straight lines where three adjacent side edges in the medium substrate B are located. Wherein, the lower bottom edge of the right trapezoid metal surface is connected with the upper common metal surface or the lower common metal surface.
Four rectangular gaps are uniformly distributed in each right-angle trapezoid metal surface at intervals. The gap lengths of the four rectangular gaps gradually decrease from the lower bottom edge to the upper bottom edge.
The length of the middle lower bottom edge of each right-angle trapezoid metal surface is larger than one half of the width of the dielectric substrate B.
The SIW transmission line includes three rows of metal vias disposed in a dielectric substrate a that enclose a U-shaped cavity that is symmetric about an axis of symmetry N-N'. And the open end of the U-shaped cavity is the open end of the SIW transmission line.
The differential feed module comprises two feed microstrip lines and a probe. Two feed microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate. The probe is positioned on a vertical plane where the symmetry axis N-N' is positioned, sequentially penetrates through the upper-layer dielectric substrate, the upper shared metal surface, the dielectric substrate A, the lower shared metal surface and the lower-layer dielectric substrate, and is connected with the two feed microstrip lines.
Each feed microstrip line is linear and is perpendicular to the symmetric axis N-N'.
The differential feed module also comprises two arc microstrip lines and a plurality of metalized through holes. The two arc microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate and are symmetrical about a symmetry axis N-N'. Each arc microstrip line takes the probe as the center of a circle. The feed microstrip line passes through the opening end of the corresponding arc microstrip line. The upper dielectric substrate positioned below the arc microstrip line and the lower dielectric substrate positioned above the arc microstrip line are both provided with a plurality of metalized through holes along the arc direction.
The invention has the following beneficial effects:
1. the differential feed module completes the conversion from the differential microstrip to the differential SIW, so that the structure has the advantage of low profile and can be integrated in a planar circuit.
2. The differential feeding mode can be directly connected with the balanced circuit, and the loss and the occupied space caused by a single-end-to-differential conversion structure (balun) are saved.
3. The differential feed mode inhibits the transmission of common-mode signals, and has a wider matching bandwidth, the absolute bandwidth which can be matched is 11-17GHz, the relative bandwidth is 43%, and the ultra-wideband transmission is in the ultra-wideband category; the differential broadband antenna can achieve a common-mode rejection effect in a wide range, can cover a plurality of practical application frequency bands, and has very good performance stability in the whole broadband although the bandwidth is wide.
4. The linear skewed slot antenna has stable direction diagram in the working bandwidth and has the characteristics of low cross polarization and low side lobe. The low cross polarization and the low side lobe are traditional antenna indexes and can affect the transmission quality of antenna signals, the low cross polarization is beneficial to eliminating the influence of noise, and the low side lobe can reduce other interferences in the main lobe direction as far as possible.
5. The whole structure is narrower in the direction perpendicular to the end-fire direction, the whole size of the antenna is small, the occupied space is small, the use of the dielectric substrate is reduced, and the cost is low.
Drawings
Fig. 1 shows a longitudinal section of a printed circuit board for a differential endfire antenna based on a SIW structure according to the present invention.
Fig. 2 shows a three-dimensional diagram of a differential endfire antenna based on a SIW structure according to the present invention.
Fig. 3 shows a top view of a differential endfire antenna based on a SIW structure according to the present invention.
FIG. 4 shows a schematic layout of the slot antenna and the SIW transmission line according to the present invention.
FIG. 5 is a schematic diagram showing the layout positions of metal vias in the SIW transmission line according to the present invention.
Fig. 6 shows a schematic diagram of the preferred layout dimensions of the chute antenna of the present invention.
FIG. 7 shows a schematic diagram of the preferred layout dimensions of probe wells in the present invention.
FIG. 8 is a graph showing the results of scattering parameter simulation and testing in the present invention.
Fig. 9 shows a frequency gain plot in accordance with the present invention.
FIG. 10 (a) shows the E-plane pattern at 13 GHz.
FIG. 10 (b) shows the 13GHz H-plane pattern.
FIG. 10 (c) shows the E-plane pattern at 14 GHz.
FIG. 10 (d) shows the H-plane pattern at 14 GHz.
Among them are:
C1. a first metal face; C2. a second metal layer; C3. a third metal surface; C4. a fourth metal surface;
s1, an upper medium substrate; s2, a middle-layer medium substrate; s21, a medium substrate A; s22, a medium substrate B; s3, a lower medium substrate;
11. a first row of metal vias; 12. a second row of metal vias; 13. a third row of metal vias; 14. an upper common metal surface;
21. a right trapezoid metal face; 22. a rectangular slit;
31. a feed microstrip line; 32. an arc microstrip line; 33. metallizing the via hole; 34. a probe via hole; 35. and (3) a probe.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 1, 2 and 3, a differential endfire antenna based on a SIW structure includes a dielectric substrate, and a SIW transmission line, a tapered slot antenna and a differential feed module printed on the dielectric substrate.
The dielectric substrate is divided into three layers, namely an upper dielectric substrate S1, a middle dielectric substrate S2 and a lower dielectric substrate S3 from top to bottom. The intermediate dielectric substrate includes a dielectric substrate A S21 and a dielectric substrate B S22 arranged side-by-side.
The three-layer medium substrate has a symmetry axis N-N' parallel to the length direction.
The upper dielectric substrate and the lower dielectric substrate are both preferably PCBs with the thickness of 0.508mm and the dielectric constant of 3.55. The middle layer dielectric substrate is preferably a PCB board with the thickness of 1.5mm and the dielectric constant of 3.55. And PCBs with other specifications can be used as the dielectric substrate.
The dielectric substrate a has the same size as the upper dielectric substrate and the lower dielectric substrate, respectively, and has an upper common metal surface 14 and a lower common metal surface.
The metal surface has four layers, and the first metal surface C1, the second metal surface C2, the third metal surface C3 and the fourth metal surface C4 are arranged from top to bottom in sequence. The first metal surface C1 is printed on the upper surface of the upper-layer dielectric substrate, the second metal surface C2 is printed on the upper surface of the middle-layer dielectric substrate, the third metal surface C3 is printed on the lower surface of the middle-layer dielectric substrate, and the fourth metal surface C4 is printed on the lower surface of the lower-layer dielectric substrate.
The SIW transmission line has a short end and an open end. The SIW transmission line is disposed in the dielectric substrate a, and as shown in fig. 5 and 7, the SIW transmission line includes three rows of metal vias, namely, a first row of metal vias 11, a second row of metal vias 12, and a third row of metal vias 13, disposed in the dielectric substrate a, and the three rows of metal vias surround to form a U-shaped cavity symmetrical about the symmetry axis N-N'. And the open end of the U-shaped cavity is the open end of the SIW transmission line.
The first row of metal through holes are vertical to the symmetry axis N-N ', the second row of metal through holes and the third row of metal through holes are respectively and vertically connected to two ends of the first row of metal through holes and extend to the edge of the dielectric substrate A, and the first row of metal through holes and the third row of metal through holes are symmetrically distributed about the symmetry axis N-N'. And the three rows of metal through holes form a SIW transmission line with one end short-circuited and one end open-circuited.
The skewed slot antenna is connected with the open end of the SIW transmission line to form an end-fire antenna based on the SIW. Therefore, a relatively wide bandwidth can be satisfied, and a low-sidelobe, low-cross-polarization directional pattern can be guided.
The chute antenna is positioned on the dielectric substrate B.
The chute antenna comprises two metal surfaces 21 of right trapezoid shape. The two right-angle trapezoid metal surfaces are respectively arranged on the upper surface and the lower surface of the dielectric substrate B and are symmetrical about a symmetry axis N-N'. Each of the metal surfaces has at least one rectangular slot 22 perpendicular to its height.
The upper bottom edge, the lower bottom edge and the right-angle side edge of each right-angle trapezoid metal surface are respectively coincided with the straight lines where three adjacent side edges in the medium substrate B are located. The lower bottom edge of the right trapezoid metal surface is connected with the upper common metal surface or the lower common metal surface, and the length of the lower bottom edge is preferably greater than one half of the width of the dielectric substrate B.
As shown in FIG. 6, the lower base, the upper base and the height of each of the right trapezoid metal surfaces are preferably L3=9.6mm，L2=0.9mm and L4=24 mm. As shown in FIG. 4, the outer side of each metal face of the right trapezoid is preferably spaced from the axis of symmetry N-N' by a distance L1=8.5mm。
Four rectangular gaps with equal width and unequal length are uniformly distributed in each right-angle trapezoid metal surface at intervals. The gap lengths of the four rectangular gaps gradually decrease from the lower bottom edge to the upper bottom edge.
The right-angle trapezoidal metal surface and the upper common metal surface which are positioned on the upper surface of the dielectric substrate B form a second layer of metal surface; and the right-angle trapezoidal metal surface and the lower common metal surface which are positioned on the lower surface of the medium substrate B form a third layer metal surface.
The differential feed module is used for carrying out differential feed on the SIW-based end-fire antenna.
The differential feed module comprises two feed microstrip lines 31, two arc microstrip lines 32, a plurality of metalized via holes 33, a probe via hole 34 and a probe 35.
Two feed microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate. One end of each of the two feed microstrip lines is aligned with one long side of the upper dielectric substrate to form a microstrip port with characteristic impedance of 50 omega, and the other end slightly exceeds the symmetry axis N-N'.
The upper dielectric substrate, the upper common metal surface, the dielectric substrate A, the lower common metal surface and the lower dielectric substrate are all provided with probe through holes 34, and the probe through holes 34 are positioned at the place of the symmetry axis N-NIn a vertical plane, a preferred radius is r =0.25 mm; the probe via holes on the upper common metal surface and the lower common metal surface are larger and are 2.33 r; the probe via holes are all positioned in a U-shaped cavity of the SIW transmission line, and the distance between the probe via holes and the short-circuited end is preferably L5=4.12mm。
The probe sequentially penetrates through the upper-layer dielectric substrate, the upper common metal surface, the dielectric substrate A, the lower common metal surface and the probe through hole on the lower-layer dielectric substrate and is connected with the two feed microstrip lines. The differential feed module feeds the differential microstrip signal into the SIW transmission line through the probe, so that the conversion of a feed mode from the differential microstrip to the differential SIW is completed, and a wider matching bandwidth can be realized.
Each feed microstrip line is linear and is perpendicular to the symmetric axis N-N'. The two feed microstrip lines are preferably equal in width and length.
The two arc microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate and are symmetrical about a symmetry axis N-N'. Each arc microstrip line takes the probe as the center of a circle. The feed microstrip line passes through the opening end of the corresponding arc microstrip line. The upper dielectric substrate positioned below the arc microstrip line and the lower dielectric substrate positioned above the arc microstrip line are both provided with a plurality of metalized through holes along the arc direction. The diameter of the arc microstrip line needs to have a certain distance with the microstrip feeder part, and the distance is adjusted according to the field distribution strength of the microstrip line.
The metalized via hole and the metal through hole are preferably in a periodic structure with the radius R =0.4mm and the period p =1.2 mm.
When the differential feeding is carried out, signals are transmitted to two ends of the probe in a constant amplitude and opposite phase mode, and the SIW transmission line can be effectively excited. The arc microstrip line on the upper layer and the arc-shaped metalized through hole play a matching role.
Fig. 8 shows simulation and test results for differential and common mode scattering parameters, and fig. 9 shows simulation and test results for frequency gain curves. The E-plane and H-plane patterns of 13GHz are shown in the (a) diagram and the (b) diagram of FIG. 10; the E-plane and H-plane patterns of 14GHz are shown in the (c) diagram and the (d) diagram of FIG. 10. The test adopts an Agilent 5230C vector network analyzer. Through the design, the bandwidth of the differential mode impedance of the differential end-fire antenna based on the SIW structure is 10.9GHz to 16.1 GHz; within the differential mode operating bandwidth, the common mode maximum return loss is less than 1 dB. The frequency gain curves in the differential mode working bandwidth are all larger than 7.1 dBi. Cross polarization is less than-11 dB; the E-plane half power lobe widths at 14GHZ and 16GHZ are 60 degrees with a low side lobe level of-13 dBi. The test result and the simulation result are well matched.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent modifications can be made within the technical spirit of the present invention, and the scope of the present invention is also within the scope of the present invention.
Claims (6)
1. A differential end-fire antenna based on SIW structure is characterized in that: the antenna comprises a dielectric substrate, and an SIW transmission line, a skewed slot antenna and a differential feed module which are printed on the dielectric substrate;
the SIW transmission line is provided with a short-circuit end and an open-circuit end, and the chute antenna is connected with the open-circuit end of the SIW transmission line to form an end-fire antenna based on the SIW; the differential feed module is used for carrying out differential feed on the SIW-based end-fire antenna;
the medium substrate is divided into three layers, namely an upper medium substrate, a middle medium substrate and a lower medium substrate from top to bottom; the middle layer dielectric substrate comprises a dielectric substrate A and a dielectric substrate B which are arranged in parallel; the dielectric substrate A has the same size with the upper dielectric substrate and the lower dielectric substrate, and has an upper common metal surface with the upper dielectric substrate and a lower common metal surface with the lower dielectric substrate;
the SIW transmission line is arranged in the dielectric substrate A, and the oblique slot antenna is positioned on the dielectric substrate B;
the three layers of medium substrates are provided with symmetrical axes N-N' parallel to the length direction; the chute antenna comprises two right-angle trapezoidal metal surfaces; the two right-angle trapezoid metal surfaces are respectively arranged on the upper surface and the lower surface of the dielectric substrate B and are symmetrical about a symmetry axis N-N'; each right-angle trapezoid metal surface is internally provided with at least one rectangular gap vertical to the height direction of the right-angle trapezoid metal surface;
the SIW transmission line comprises three rows of metal through holes arranged in a dielectric substrate A, and the three rows of metal through holes surround to form a U-shaped cavity which is symmetrical about a symmetry axis N-N'; the open end of the U-shaped cavity is the open end of the SIW transmission line;
the differential feed module comprises two feed microstrip lines and a probe; the two feed microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate; the probe is positioned on a vertical plane where the symmetry axis N-N' is positioned, sequentially penetrates through the upper-layer dielectric substrate, the upper shared metal surface, the dielectric substrate A, the lower shared metal surface and the lower-layer dielectric substrate, and is connected with the two feed microstrip lines.
2. The SIW structure based differential endfire antenna of claim 1, wherein: the upper bottom edge, the lower bottom edge and the right-angle side edge of each right-angle trapezoid metal surface are respectively superposed with the straight lines where three adjacent side edges in the dielectric substrate B are located; wherein, the lower bottom edge of the right trapezoid metal surface is connected with the upper common metal surface or the lower common metal surface.
3. A SIW structure based differential endfire antenna according to claim 2, wherein: four rectangular gaps are uniformly distributed in each right-angle trapezoid metal surface at intervals; the gap lengths of the four rectangular gaps gradually decrease from the lower bottom edge to the upper bottom edge.
4. A SIW structure based differential endfire antenna according to claim 3, wherein: the length of the middle lower bottom edge of each right-angle trapezoid metal surface is larger than one half of the width of the dielectric substrate B.
5. A differential endfire antenna based on a SIW structure according to claim 4, characterized in that: each feed microstrip line is linear and is perpendicular to the symmetric axis N-N'.
6. A differential endfire antenna based on a SIW structure according to claim 4, characterized in that: the differential feed module also comprises two arc microstrip lines and a plurality of metallized through holes; the two arc microstrip lines are respectively arranged on the upper surface of the upper-layer dielectric substrate and the lower surface of the lower-layer dielectric substrate; each arc microstrip line takes the probe as the center of a circle; the feed microstrip line penetrates through the opening end of the corresponding arc microstrip line; the upper dielectric substrate positioned below the arc microstrip line and the lower dielectric substrate positioned above the arc microstrip line are both provided with a plurality of metalized through holes along the arc direction.
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| CN111883913B (en) * | 2020-06-28 | 2021-09-21 | 华南理工大学 | Branch-loaded low-profile wide-bandwidth beam antenna |
| CN112018474A (en) * | 2020-08-12 | 2020-12-01 | 南京航空航天大学 | SIW dual-frequency dual-mode balanced band-pass filter with inherent common-mode rejection |
| CN112072235B (en) * | 2020-08-26 | 2022-01-11 | 南京航空航天大学 | Microstrip-probe structure feed dual-mode SIW balance band-pass filter |
| CN113140881B (en) * | 2021-04-07 | 2021-12-10 | 博微太赫兹信息科技有限公司 | 45-degree-rotation-angle millimeter wave differential line-to-SIW (substrate integrated waveguide) structure |
| CN115425409B (en) * | 2022-11-07 | 2023-03-24 | 中国人民解放军国防科技大学 | Waveguide slot energy selection antenna |
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| CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
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| US10170839B2 (en) * | 2016-05-16 | 2019-01-01 | City University Of Hong Kong | Circularly polarized planar aperture antenna with high gain and wide bandwidth for millimeter-wave application |
| CN108767437A (en) * | 2018-04-24 | 2018-11-06 | 华南理工大学 | A kind of differential bipolar antenna based on substrate integration wave-guide |
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| CN103178341B (en) * | 2013-03-12 | 2014-12-10 | 东南大学 | Indoor high-speed communication antenna of wide-beam Q-band millimeter waves |
| CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
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