CN110890457A

CN110890457A - High-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and manufacturing method thereof

Info

Publication number: CN110890457A
Application number: CN201911203680.6A
Authority: CN
Inventors: 黄火林; 张卉
Original assignee: Dalian University of Technology
Current assignee: Dalian University of Technology
Priority date: 2019-11-29
Filing date: 2019-11-29
Publication date: 2020-03-17
Anticipated expiration: 2039-11-29
Also published as: CN110890457B

Abstract

A high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions and a manufacturing method thereof belong to the field of semiconductor sensors. The technical points are as follows: the heterojunction structure layer is grown on the substrate in sequence, and two-dimensional electron gas exists in the heterojunction structure layer; the lower surface of the substrate is provided with a vertical Hall sensor used for sensing a magnetic field parallel to the surface of the device, and the upper surface of the heterojunction structure layer is provided with a cross-shaped horizontal Hall sensor used for sensing a magnetic field vertical to the surface of the device. Has the advantages that: the high-temperature Hall sensor integrating the back vertical type and front horizontal type three-dimensional magnetic field detection functions can stably work at high temperature, measure magnetic fields in any direction of a space, and has higher sensitivity when measuring the magnetic fields in the X, Y and Z directions.

Description

High-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and manufacturing method thereof

Technical Field

The invention belongs to the field of semiconductor sensors, and particularly relates to a high-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and a manufacturing method thereof.

Background

Since the hall effect was discovered in the 70 s of the 19 th century, hall sensors based on the hall effect principle have the advantages of good linearity, good dynamic characteristics, high accuracy and the like, and are widely applied to various fields such as aerospace, biomedicine, industrial production and the like. The traditional hall sensor is mainly made of materials such as silicon (Si), gallium arsenide (GaAs), indium arsenide (InAs) and indium antimonide (InSb), and although the hall sensor can meet the use requirement at low temperature or ambient temperature, the hall sensor product which can stably work at room temperature to more than 400 ℃ is still needed in the market at present. For example, local measurements of curie temperature of circuitry and ferromagnetic materials in space exploration vehicles, etc. The three-dimensional Hall sensor can detect the magnetic field in any direction of space, and the existing three-dimensional Hall sensor is usually manufactured based on Si materials. The three-dimensional Hall sensor obtained by integrating the horizontal Hall sensor for measuring the vertical magnetic field and the vertical Hall sensor for measuring the horizontal magnetic field has larger size, and has larger cross sensitivity due to the mutual interference between the sensors. The three-dimensional hall sensor can also be obtained by integrating hall sensors for measuring a single magnetic field, but the new application of the three-dimensional hall sensor in some miniature hall sensors is limited due to the large size of the three-dimensional hall sensor.

Compared with the traditional materials such as Si, GaAs and the like, the third generation semiconductor material represented by silicon carbide (SiC) and gallium nitride (GaN) has the characteristics of large forbidden bandwidth, high critical breakdown electric field, high saturated electron drift velocity and the like, and has good material advantages and wide application prospect in the aspect of preparing high-temperature Hall sensors. Wherein: compared with a Si material, the SiC material has a wide forbidden band (about 3.25eV) and high thermal conductivity (3-5W/(cm K)), a longitudinal electric field generated by high-density polarization charges on the interface of the heterojunction material does not exist, and electrons cannot be bound in a transverse current channel in the longitudinal offset process when the Hall sensor works, so that the SiC material is suitable for manufacturing a vertical Hall sensor at high temperature; potential wells at the heterojunction (typically AlGaN/GaN) interface of GaN materialsIn the presence of a high density of two-dimensional electron gas (2DEG) induced by polarization charges, a high electron mobility (typically 2000 cm) is maintained in the channel without deliberate doping²The electron mobility of the GaN-based material is higher than that of the bulk material), therefore, the GaN-based material is suitable for manufacturing a horizontal Hall sensor at high temperature, and the traditional three-dimensional Hall sensor is obtained by integrating Hall sensors for measuring a magnetic field in a single direction and has larger size.

The existing hall sensors mainly comprise two types, one type is a single-material hall sensor represented by a Si material, and the other type is a hall sensor based on a heterojunction structure. The Hall sensor made of the silicon-based material has a mature process, can be compatible with an integrated circuit process, and is easy to produce. The Hall sensor based on the InAs, InSb and other heterojunction structures can obtain higher sensitivity due to the fact that the heterojunction interface of the Hall sensor is provided with the two-dimensional electron gas with high mobility. However, because the forbidden band width of the traditional materials is narrow, the physical properties of the traditional materials can be obviously changed under the environment of more than 150 ℃, and the traditional materials cannot stably work at high temperature, so that the application range of the Hall sensor is limited.

At present, a horizontal Hall sensor and a vertical Hall sensor for measuring a single magnetic field are mainly used in the market, a three-dimensional Hall sensor which integrates the horizontal Hall sensor for measuring the surface magnetic field of a vertical device and the vertical Hall sensor for measuring the surface magnetic field of a parallel device in the same plane is designed for detecting the magnetic field in any direction of a space, the size of the finally obtained three-dimensional Hall sensor is large due to the integration of the two Hall sensors, and meanwhile, the cross sensitivity of the three-dimensional Hall sensor is also relatively large due to mutual interference between the sensors. Besides, the three-dimensional Hall sensor can be obtained by integrating three Hall sensors for measuring the magnetic field in a single direction at the X, Y, Z direction. The existing mature products on the market, such as the TLV493D three-dimensional hall sensor, can measure the magnetic field in any direction in space by rotating the vertical hall sensor in the X, Y, Z direction. But are relatively large in size and can only operate stably below 125 c. In any integration mode, the size of the finally obtained device is large, and the new application of the device in micro and nano Hall sensors is limited.

There is a high density of two-dimensional electron gas (2DEG) induced by polarization charges in a potential well at a GaN heterojunction (typically AlGaN/GaN) interface, a longitudinal electric field exists in a direction perpendicular to a channel, electrons in the channel are confined therein, although there is no influence on the horizontal type hall sensor, so that current and voltage sensed by the vertical type hall sensor are reduced, and sensor sensitivity is lowered.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides a high-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions and a manufacturing method thereof.

The technical scheme is as follows:

a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions comprises: the structure comprises a substrate, a buffer layer and a heterojunction structure layer, wherein the buffer layer and the heterojunction structure layer are sequentially grown on the substrate, and two-dimensional electron gas exists in the heterojunction structure layer; the lower surface of the substrate is provided with a vertical Hall sensor used for sensing a magnetic field parallel to the surface of the device, and the upper surface of the heterojunction structure layer is provided with a cross-shaped horizontal Hall sensor used for sensing a magnetic field vertical to the surface of the device; the vertical Hall sensor is in a cross shape as a whole, a common terminal electrode C2, a sensing electrode S2, a signal input end C0, a sensing electrode S1 and a common terminal electrode C1 are transversely and sequentially arranged in the cross shape, a common terminal electrode C1 ', a sensing electrode S1', a signal input end C0, a sensing electrode S2 'and a common terminal electrode C2' are longitudinally and sequentially arranged in the cross shape, and the signal input end C0 is arranged at the joint of the transverse and longitudinal cross shapes of the cross shape; the four ends of the cross-shaped horizontal Hall sensor are respectively provided with a signal input electrode C3, a signal input electrode C4, a sensing electrode S3 and a sensing electrode S4, the signal input electrode C3 is arranged opposite to the signal input electrode C4, and the sensing electrode S3 is arranged opposite to the sensing electrode S4.

Further, the substrate is SiC, the buffer layer is any one of AlN, GaN, and a superlattice structure, the heterojunction structure layer includes an epitaxial layer and a barrier layer, the epitaxial layer is GaN, and the barrier layer is AlGaN.

Furthermore, the thickness of the buffer layer is 10 nm-100 nm, the thickness of the epitaxial layer is 0.1 μm-50 μm, and the thickness of the barrier layer is 5 nm-100 nm.

Further, the common terminal electrode C2, the sensing electrode S2, the signal input terminal C0, the sensing electrode S1, the common terminal electrode C1, the common terminal electrode C1 ', the sensing electrode S1', the sensing electrode S2 ', the common terminal electrode C2', the signal input electrode C3, the signal input electrode C4, the sensing electrode S3, and the sensing electrode S4 are rectangular, trapezoidal, or circular.

Further, the common terminal electrode C1 and the common terminal electrode C2 are centrosymmetric with respect to the signal input terminal C0, and the sensing electrode S1 and the sensing electrode S2 are centrosymmetric with respect to the signal input terminal C0.

The invention also comprises a manufacturing method of the high-temperature Hall sensor integrating the back vertical type and front horizontal type three-dimensional magnetic field detection functions, which comprises the following steps:

s1, cleaning the substrate material to remove the pollutants on the surface of the substrate;

s2, epitaxially growing a buffer layer and a heterojunction structure layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method and a hydride vapor phase epitaxy method;

s3, after photoetching and developing, etching the sample after epitaxial growth by using an inductively coupled plasma etching method;

s4, depositing composite metal by adopting an electron beam evaporation system, and forming ohmic contact by utilizing a rapid thermal annealing process;

s5, depositing a dielectric layer by adopting any one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, an atomic layer deposition method and an electron beam evaporation method for device passivation;

and S6, photoetching and corroding the passivation layer at the electrode to form a window, and depositing metal at the electrode by adopting any one of a magnetron sputtering method, an electron beam evaporation method and a thermal evaporation method to manufacture a bonding pad and lead.

Has the advantages that:

the high-temperature Hall sensor integrating the back vertical type and the front horizontal type three-dimensional magnetic field detection functions and the manufacturing method thereof have the following technical advantages: 1) SiC and GaN materials have large band gaps and high breakdown electric fields, are high-quality materials for preparing high-temperature Hall sensors, and the prepared vertical and horizontal Hall sensors stably work at high temperature (higher than 400 ℃); 2) the GaN heterojunction structure epitaxially grown on the SiC substrate material has lower lattice mismatch. Compared with the commonly used substrate materials of Si and sapphire, the SiC and GaN have much smaller lattice mismatch (typical value is 3.5-3.8%) and much higher thermal conductivity (typical value is 4.9W/(cm K)) than the sapphire substrate, so that the SiC material is preferably adopted as the substrate; 3) the GaN heterojunction is used for manufacturing a horizontal Hall sensor for measuring a vertical magnetic field, and due to the existence of high-concentration two-dimensional electron gas, the electron mobility is high, and the sensitivity of the sensor is high; compared with a GaN heterojunction, the SiC of the bulk material does not have a two-dimensional electron gas channel, and also does not have a longitudinal electric field vertical to the channel direction, so that the channel electron constraint is small, and the sensitivity of the vertical Hall sensor is favorably improved; 4) the Hall sensor can stably work at high temperature, measure magnetic fields in any directions in space, has small size, and has high sensitivity when measuring the magnetic fields in X, Y and Z directions.

Compared with the traditional Si, GaAs, InAs and InSb materials, the invention utilizes the characteristic of large forbidden band width of SiC and GaN materials, and can meet the use requirement of the Hall sensor in a high-temperature environment. On the other hand, a novel small-size three-dimensional Hall sensor structure is provided, the front AlGaN/GaN horizontal Hall sensor and the back SiC vertical Hall sensor are integrated by utilizing the advantages of respective materials, the three-dimensional magnetic field detection can be realized, the size is saved, the power consumption is low, the space position detection sensitivity is high, and the manufacturing of the array Hall sensor is facilitated. Because the lattice mismatch between the epitaxially grown GaN heterojunction and the SiC substrate is small, and the vertical Hall sensor made of the SiC material does not have a longitudinal electric field, the sensitivity of the sensor is improved; the horizontal Hall sensor with the GaN heterojunction has the characteristic of high electron mobility due to the fact that high-concentration two-dimensional electron gas has the characteristic of high electron mobility, and the performance of the device is improved. The high-temperature three-dimensional Hall sensor manufactured by the scheme is expected to be widely applied to various military, aerospace, medical, miniature and nano sensors in the future.

Drawings

Fig. 1 is a schematic structural diagram of the front and back surfaces of a high-temperature hall sensor integrated with the back vertical type and front horizontal type three-dimensional magnetic field detection functions according to the present invention;

FIG. 2 is a schematic cross-sectional view of a high-temperature Hall sensor integrated with back vertical and front horizontal three-dimensional magnetic field detection functions according to the present application;

FIG. 3 is a schematic diagram of the operation of the AlGaN/GaN heterojunction horizontal Hall sensor of the present invention;

FIG. 4 is a schematic diagram of the operation of a vertical Hall sensor of the SiC substrate according to the present invention;

FIG. 5 is a process flow diagram of an embodiment of the present invention;

FIG. 6 is a graph of experimental verification results of the relationship between the current sensitivity and the temperature of the AlGaN/GaN heterojunction horizontal Hall sensor proposed by the present invention;

fig. 7 is a graph of experimental verification results of the relationship between the current sensitivity and the temperature of the SiC vertical hall sensor proposed by the present invention.

Detailed Description

The high-temperature hall sensor integrating the back vertical type and the front horizontal type three-dimensional magnetic field detection functions and the manufacturing method thereof will be further described with reference to fig. 1 to 7.

Example 1

The invention provides a technical scheme of a complete wide bandgap material three-dimensional Hall sensor which integrates a back SiC vertical Hall sensor and a front GaN heterojunction horizontal Hall sensor and is suitable for a high-temperature working environment. As shown in the upper diagram of fig. 1, the front structure of the device structure is schematically illustrated. The GaN heterojunction structure is used for manufacturing a cross horizontal Hall sensor and sensing a magnetic field vertical to the surface of the device. The electrodes C3 and C4 are signal input ends, current or voltage can be input, and the potential difference is measured between the electrodes S3 and S4. It is also possible to input a current or a voltage between the electrodes S3, S4 as signal inputs and measure the potential difference between the electrodes C3, C4. The GaN heterojunction structure effectively enlarges the temperature range of stable work of the sensor, and increases the sensitivity of the sensor. As shown in the lower diagram of fig. 1, the structure of the back side of the device structure is schematically illustrated. Substrates of SiC materials are used to make vertical hall sensors for sensing magnetic fields parallel to the surface of the device. The electrode C0 is a signal input end, current or voltage is input, and the electrodes C1, C2, C1 'and C2' are grounded as a common end. If a magnetic field parallel to the y direction exists, the currents of the electrodes C0 → C1 and C0 → C2 are perpendicular to the direction of the magnetic field, moving carriers are deflected under the action of Lorentz force, and potential differences, namely Hall voltages, are sensed on two sides of the electrodes S1 and S2, so that the aim of measuring the magnetic field is fulfilled. Similarly, if there is a magnetic field parallel to the x-direction, the current of the electrode C0 → C1 ', C0 → C2' is perpendicular to the direction of the magnetic field, and a potential difference is sensed on both sides of the electrodes S1 'and S2', so that the magnitude of the magnetic field in the x-direction can be measured. It is also possible to connect the electrode C0 to ground, and to input current or voltage to the electrodes C1, C2 and C1 ', C2', and to measure the potential difference at S1, S2 and S1 ', S2'. Because the SiC material does not contain two-dimensional electron gas, electrons in the bulk material are less restrained by a longitudinal electric field, so that the sensitivity of the vertical Hall sensor is improved; meanwhile, the SiC material has a large forbidden band width and has the characteristic of stable operation at high temperature.

The structural schematic diagram of the technical scheme of the invention is shown in fig. 2, and fig. 2 is a schematic cross-sectional diagram of the device with AA' in fig. 1 as a tangent. The substrate is made of SiC materials, a buffer layer and an AlGaN/GaN heterojunction structure are epitaxially grown on the substrate, wherein the buffer layer can be AlN or GaN (the thickness is 10-100 nm), the GaN is an epitaxial layer (the thickness is 0.1-50 mu m), an AlGaN barrier layer (5-100 nm) is arranged on the epitaxial layer, and the material components in the barrier layer are not limited. The electrodes C1 and C2 are symmetric with respect to the center of C0, the sensing electrodes S1 and S2 are symmetric with respect to the center of C0, the electrodes C3 and C4 are symmetric, and the shape of the electrodes is not particularly limited and may be rectangular trapezoid, etc. The electrodes need to form a good ohmic contact with the semiconductor material. Fig. 3 is a working principle diagram of a front AlGaN/GaN heterojunction horizontal hall sensor, and fig. 4 is a working principle diagram of a back SiC substrate vertical hall sensor.

The implementation process of the target device of the application of the invention is explained as follows:

(1) substrate preparation: preparing a SiC material substrate, cleaning the substrate material, and removing pollutants on the surface of the SiC substrate.

(2) And (3) epitaxial growth: epitaxially growing a buffer layer and an AlGaN/GaN heterojunction structure by any one of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE), wherein the buffer layer can be AlN, GaN or a superlattice structure, and the thickness of the buffer layer is 10-100 nm; the thickness of the generated GaN epitaxial layer is 0.1-50 mu m, and the thickness of the AlGaN barrier layer on the epitaxial layer is 5-100 nm.

(3) Etching the table top: and after photoetching and developing, etching the sample subjected to epitaxial growth by utilizing Inductively Coupled Plasma (ICP), wherein the etching depth of the table top is 50-800 nm.

(4) And (3) electrode ohmic contact manufacturing: after photoetching development, the composite metal is deposited by an electron beam evaporation system, and then a good ohmic contact is formed by utilizing a Rapid Thermal Annealing (RTA) process.

(5) Surface passivation: and depositing a dielectric layer by adopting any one of a Plasma Enhanced Chemical Vapor Deposition (PECVD), magnetron sputtering, Atomic Layer Deposition (ALD) and electron beam Evaporation (EB) mode to perform device passivation.

(6) Opening a window: and photoetching and corroding the passivation layer at the electrode to form a window, and depositing metal at the electrode by adopting any one of magnetron sputtering, electron beam Evaporation (EB) and thermal evaporation to manufacture a bonding pad and lead.

The invention provides a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions. The vertical Hall sensor is manufactured on the SiC substrate, the horizontal Hall sensor is manufactured on the GaN heterojunction subjected to epitaxial growth, the size of the three-dimensional Hall sensor can be reduced, the sensitivity of the device can be improved due to small lattice mismatch of GaN and SiC materials and the material advantages of the GaN and SiC materials, and meanwhile, the sensor can work stably at high temperature.

The invention provides a high-temperature Hall sensor integrating back vertical type and front horizontal type three-dimensional magnetic field detection functions, which is structurally innovative and manufactured.

The invention provides a technical scheme of a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions, which is characterized in that: 1) the SiC and GaN materials have large band gaps and are high-quality materials for preparing the high-temperature Hall sensor, and the prepared vertical and horizontal Hall sensors can stably work at high temperature (higher than 400 ℃); 2) the GaN heterojunction structure epitaxially grown on the SiC substrate material has lower lattice mismatch. Compared with the commonly used substrate materials of Si and sapphire, the lattice mismatch of SiC and GaN is much smaller (typical value is 3.5% -3.8%), and the thermal conductivity is much higher than that of the sapphire substrate (typical value is 4.9W/(cm K)); 3) the GaN heterojunction is used for manufacturing a horizontal Hall sensor for measuring a vertical magnetic field, and has high electron mobility and high device sensitivity due to the high-concentration two-dimensional electron gas; compared with a GaN heterojunction, the SiC substrate made of the SiC material is used for manufacturing the vertical Hall sensor for measuring the horizontal magnetic field, and compared with the SiC heterojunction, the SiC substrate made of the bulk material does not have a two-dimensional electron gas channel, and also does not have a longitudinal electric field vertical to the direction of the channel, so that the electron constraint of the channel is small, and the sensitivity of the vertical Hall sensor is improved.

Example 2

The specific embodiment of the target device of the present invention has the following manufacturing process:

1) substrate preparation: preparing a SiC material substrate, cleaning the substrate material, and removing pollutants on the surface of the SiC substrate.

2) And (3) epitaxial growth: epitaxial growth by metal organic chemical vapor depositionAlGaN/GaN heterojunction structure and buffer layer AlN, the generated GaN epitaxial layer is not doped intentionally, the thickness is 10 μm, and the background electron concentration is less than 3 × 10¹⁶cm^-3The thickness of the AlGaN barrier layer on the epitaxial layer is 25nm, and the Al component is 0.25. The buffer layer is AlN and has a thickness of 50 nm.

3) Etching the table top: after a sample which grows well in an epitaxial mode is subjected to gluing (AZ 6130 positive photoresist is used), spin coating (the rotation speed is 600rpm-3s before the sample is rotated, the rotation speed is 1000rmp-20s after the sample is rotated, the final photoresist thickness is 2um), photoetching and developing (90 seconds), etching is carried out on a heterojunction and a SiC substrate by utilizing inductive coupling plasma etching, the etching power is 200W, 150sccm Cl-based gas is introduced for etching for 250s, and finally the etching depth of about 400nm is formed.

4) And (3) electrode ohmic contact manufacturing: firstly, manufacturing a back electrode, depositing three layers of Ni (80nm)/Ti (30nm)/Al (80nm) metal on the surface of back SiC by using an electron beam evaporation system after photoetching and developing, and then annealing for 6min at 930 ℃ in a nitrogen environment to form ohmic contact. Secondly, a front electrode is manufactured, four layers of metals of Ti (20nm)/Al (100nm)/Ni (45nm)/Au (55nm) are deposited on the surface of AlGaN/GaN by using an electron beam evaporation system, and the four layers of metals are annealed for 30s by using RTA equipment at 860 ℃ in a nitrogen environment to form ohmic contact. .

5) Surface passivation: depositing 300nm thick SiO by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 300 deg.C₂And the passivation layer weakens the influence of the ambient atmosphere on the device characteristics.

6) Opening a window: and corroding the passivation layer at the electrode and opening a window lead. The sample is subjected to glue coating (using AZ6130 positive photoresist), spin coating (rotating for 600rpm-3s before, rotating for 1000rmp-20s after, and finally the thickness of the photoresist is 2um), photoetching and developing (for 90 seconds), etching is carried out at the electrode with the passivated surface by utilizing ICP etching to form a window, then 500nm of Al is deposited at the electrode by adopting a magnetron sputtering method, and then a lead is led out to lead out the electrode.

Fig. 6 and 7 show the relationship between the current-dependent sensitivity and the temperature of the sensor designed according to the present invention. As shown in FIG. 6, the current sensitivity of the horizontal Hall sensor with GaN heterojunction decreases with the increase of temperature, but the decrease range is small, and the temperature drift coefficient is about 98.89 ppm/K. As shown in fig. 7, the vertical hall sensor, which is a SiC substrate material, has a temperature drift coefficient of 808.6ppm/K, although its sensitivity decreases with increasing temperature, but its current sensitivity remains high. The results of fig. 6 and fig. 7 show that the sensor provided by the embodiment of the present invention can obtain a greater sensitivity, and can also maintain stable operation at high temperature.

The technical key point of the invention is the innovation of the three-dimensional Hall sensor structure, and the traditional Hall sensor integration mode of single-direction magnetic field measurement is converted into a complete wide-bandgap material three-dimensional Hall sensor which integrates a back SiC vertical Hall sensor and a front GaN heterojunction horizontal Hall sensor and is suitable for a high-temperature working environment. When guaranteeing to survey X, Y, Z direction magnetic field, this scheme has reduced three-dimensional hall sensor's size greatly, can satisfy the use under high temperature environment simultaneously to guarantee to improve the sensitivity of sensor under the prerequisite of steady operation. The manufacturing process of the device not only reduces the degree of lattice matching, but also ensures that the electrode has good ohmic contact, and greatly improves the performance of the device product. The invention mainly protects the proposed device structure design and device manufacturing process.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention. The technical scheme of the invention is an important technical supplement for the manufacture of the existing magnetic-sensing sensor. The embodiment of the invention is not limited to the content of the invention, and other devices with the same epitaxial structure and capable of realizing the double-sided three-dimensional magnetic field detection function are all suitable for the range related to the proposal of the invention. Any other epitaxial structure combination, stacked structure, passivation layer growth (including different growth techniques, different passivation layer combinations, or passivation process steps may also be directly omitted), ohmic contact electrode fabrication process (including different metal selection, deposition methods, annealing conditions), or mesa etching process may be suitable for the scope of the present disclosure for the purpose of achieving the basic functions described herein. The substrate material may be SiC or diamond or other high temperature resistant material, and the epitaxial structure may also comprise other materials or combinations of materials that produce high carrier mobility.

Claims

1. The utility model provides an integrated three-dimensional magnetic field of back vertical type and front level detects high temperature hall sensor of function which characterized in that includes: the structure comprises a substrate, a buffer layer and a heterojunction structure layer, wherein the buffer layer and the heterojunction structure layer are sequentially grown on the substrate, and two-dimensional electron gas exists in the heterojunction structure layer; the lower surface of the substrate is provided with a vertical Hall sensor used for sensing a magnetic field parallel to the surface of the device, and the upper surface of the heterojunction structure layer is provided with a cross-shaped horizontal Hall sensor used for sensing a magnetic field vertical to the surface of the device; the vertical Hall sensor is in a cross shape as a whole, a common terminal electrode C2, a sensing electrode S2, a signal input end C0, a sensing electrode S1 and a common terminal electrode C1 are transversely and sequentially arranged in the cross shape, a common terminal electrode C1 ', a sensing electrode S1', a signal input end C0, a sensing electrode S2 'and a common terminal electrode C2' are longitudinally and sequentially arranged in the cross shape, and the signal input end C0 is arranged at the joint of the transverse and longitudinal cross shapes of the cross shape; the four ends of the cross-shaped horizontal Hall sensor are respectively provided with a signal input electrode C3, a signal input electrode C4, a sensing electrode S3 and a sensing electrode S4, the signal input electrode C3 is arranged opposite to the signal input electrode C4, and the sensing electrode S3 is arranged opposite to the sensing electrode S4.

2. The integrated back-side vertical and front-side horizontal three-dimensional magnetic field detection capable high temperature hall sensor of claim 1 wherein the substrate is SiC, the buffer layer is any one of AlN, GaN, superlattice structure, the heterojunction structure layer comprises an epitaxial layer and a barrier layer, the epitaxial layer is GaN, and the barrier layer is AlGaN.

3. The integrated high-temperature hall sensor with three-dimensional magnetic field detection function of back vertical type and front horizontal type according to claim 2 wherein the buffer layer has a thickness of 10nm to 100nm, the epitaxial layer has a thickness of 0.1 μm to 50 μm, and the barrier layer has a thickness of 5nm to 100 nm.

4. The integrated high temperature hall sensor of claim 1 where the common terminal electrode C2, sensing electrode S2, signal input terminal C0, sensing electrode S1, common terminal electrode C1, common terminal electrode C1 ', electrode S1', sensing electrode S2 ', common terminal electrode C2', signal input electrode C3, signal input electrode C4, sensing electrode S3, sensing electrode S4 are rectangular, trapezoidal or circular in shape.

5. The integrated high temperature hall sensor of claim 1 where the common terminal electrode C1 and the common terminal electrode C2 are centrosymmetric with respect to the signal input terminal C0, and the sensing electrode S1 and the sensing electrode S2 are centrosymmetric with respect to the signal input terminal C0.

6. A manufacturing method of a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions is characterized by comprising the following steps:

7. The method as claimed in claim 6, wherein the substrate is SiC, the buffer layer is one of AlN, GaN and superlattice, the heterojunction structure layer includes an epitaxial layer and a barrier layer, the epitaxial layer is GaN and the barrier layer is AlGaN.