CN110890306A - Simple and convenient substrate thinning and unloading method for semiconductor device - Google Patents
Simple and convenient substrate thinning and unloading method for semiconductor device Download PDFInfo
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- CN110890306A CN110890306A CN201811052709.0A CN201811052709A CN110890306A CN 110890306 A CN110890306 A CN 110890306A CN 201811052709 A CN201811052709 A CN 201811052709A CN 110890306 A CN110890306 A CN 110890306A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a simple and convenient method for taking off a thinned substrate for a semiconductor device, wherein the semiconductor device comprises a substrate and a workpiece arranged on the substrate, and the method comprises the following steps: (1) thinning the substrate by the prior art; (2) placing the semiconductor device on a heating device for heating until the adhesion medium is molten, wherein the adhesion medium is positioned between the substrate and the workpiece; (3) the holding blade slowly enters a gap between the substrate and the workpiece along the edge of the substrate, and slowly advances until the substrate is completely separated from the workpiece, and simultaneously, the separated substrate is clamped and placed; (4) and cleaning the substrate with the residual adhesive medium on the surface to finish the next piece. The invention has the advantages of less raw material consumption, low cost, simple steps, simple and convenient operation, high working efficiency and difficult cracking of the substrate, improves the product yield and ensures the benefit of subsequent products.
Description
Technical Field
The invention relates to a simple and convenient method for taking off a thinned substrate for a semiconductor device, belonging to the technical field of electronic information.
Background
The semiconductor devices such as transistors, integrated circuits, LEDs, LDs, etc. all need to be fabricated with a carrier-substrate, mainly because the substrate can play the following role: firstly, the core structure with micron-scale or even nano-scale thickness is not easy to break or destroy only by attaching to the substrate; secondly, the substrate is conductive, many substrates are semiconductors such as silicon, gallium arsenide, silicon carbide and the like, and the substrate and the functional material form a heterojunction or homojunction to participate in realizing the functions of the device; thirdly, some semiconductor structures need to be grown on a proper substrate to grow required materials, and problems such as lattice structures are involved, for example, epitaxial quality and device performance can be ensured by a substrate matched with an LED and LD chip epitaxial process.
In the LED and LD industry, the silicon substrate, the silicon carbide substrate, the gallium arsenide substrate, the sapphire substrate and the like which are mature in volume production at present are used as the base body, for example, the sapphire substrate has good chemical stability, does not absorb visible light, is moderate in price and relatively mature in manufacturing technology, and is widely applied to the fields of blue light LEDs and LDs. The SiC substrate has good chemical stability, good electric conductivity and good heat conductivity, does not absorb visible light and the like, and can better solve the heat dissipation problem of the power type gallium nitride-based LED device due to the beneficial electric conductivity and heat conductivity of the SiC substrate, thereby playing an important role in the technical field of semiconductor illumination.
In the using process of the substrate, surface treatment is often needed or the thickness of the substrate is required to meet specific requirements, so that the supporting effect is achieved conveniently, the electrical and optical characteristics of the device are not affected, and even the problem of the device in the using process is prevented. The most common technology in the manufacturing process of the LED chip is a substrate thinning technology, automatic equipment is adopted for mechanical chip mounting, thinning, chip discharging and cleaning in the current substrate thinning process in a small number of large-scale semiconductor chip manufacturers, but the investment cost for the equipment is high, the later management and maintenance cost is very high, and the technology is not suitable for most of small and medium-sized chip manufacturers. The conventional substrate thinning and pasting and thinning process realize the equipment operation, but most of thinning and downloading operation depends on manual downloading except that few manufacturers adopt high-cost equipment. The most common manual piece-discharging method is to place a substrate to be discharged and a workpiece into a high-temperature organic solution together to continuously melt and dissolve an adhesive medium, and take the substrate off the workpiece. Another way of manual sheet removal is to heat the workpiece and the substrate, and slide the substrate off the workpiece by an external force, mainly using tweezers or a metal object to push the substrate horizontally off the workpiece directly along the edge of the substrate or forcibly inserting the substrate from the edge of the wafer to the lower side of the substrate to pry the substrate, which is very easy to damage the substrate surface or cause the substrate to be pried, and the broken substrate further increases the difficulty of removal. Meanwhile, due to the difference of the operation levels of operators, chips are easy to be broken, and the product yield is affected. There is no effective control measure for manual work.
At present, no report about a method for thinning a substrate for a semiconductor device and then carrying out chip mounting is discovered.
Disclosure of Invention
Aiming at the defects and the defects of the prior substrate for the semiconductor device after thinning, the invention provides a simple and convenient substrate-thinning and wafer-dropping method for the semiconductor device, which is simple and easy to implement and can improve the product yield and the operation efficiency. The manual sheet feeding can be realized only by using the tweezers and the blades, and the sheet feeding efficiency is high, the fragmentation proportion is small, and the product yield is high.
The technical scheme of the invention is as follows:
a simple and convenient method for taking off a semiconductor device after thinning a substrate, wherein the semiconductor device comprises a substrate and a workpiece arranged on the substrate, and the workpiece is arranged on the substrate through an adhesive medium, and the method comprises the following steps:
(1) thinning the substrate by the prior art;
(2) heating the semiconductor device until the adhesive medium is melted; the adhesive medium is melted under the influence of high temperature.
Further preferably, the semiconductor device is placed on a flat heater to be heated.
(3) Slowly feeding the blade into a gap between the substrate and the workpiece along the edge of the substrate, slowly pushing the blade until the substrate is completely separated from the workpiece, and simultaneously clamping and placing the separated substrate by using tweezers; through the characteristics that the blade edge area is thin and is easy to penetrate into the lower part of the substrate, the problem of taking off the substrate can be well solved, and the working efficiency is improved.
(4) And cleaning the substrate with the residual adhesive medium on the surface to finish the next piece.
Further preferably, the adhesive medium is mainly glue or wax at present, and the substrate with the adhesive medium left on the surface is placed in an organic solution for cleaning.
Preferably, in step (3), the included angle between the blade and the surface of the workpiece is not greater than 45 °.
Further preferably, the included angle between the blade and the surface of the workpiece is in the range of 5-20 °
Most preferably, the included angle between the blade and the workpiece surface is in the range of 5-10 °
The method solves the problem of low efficiency by using the blade, solves the problem of substrate fragmentation by the requirement of an included angle, and the two directly influence the product yield. With the blade slowly inserted, the substrate is slowly pried up, and after the substrate is completely pried up, the substrate is held up by tweezers and placed in a container for cleaning. If the included angle between the blade and the surface of the workpiece is too low, the blade is easy to scratch the surface of the substrate, and if the included angle is too high, the resistance of the blade penetrating into the lower part of the substrate is too large, so that the workpiece is easy to pry and crack. The selection of the angle can avoid scratching the surface of the substrate, ensure the completeness of the surface of the substrate, prevent the workpiece from being pried and cracked and ensure the completeness of the workpiece.
Preferably, according to the invention, the blade body thickness is not greater than 0.3mm and the blade edge thickness is not greater than 0.1 mm.
According to the invention, the preferable material of the blade is stainless steel or ceramic. Stainless steel and ceramic are high temperature resistant materials, and the blade can be guaranteed to be resistant to high temperature of more than 200 ℃ and not deformed.
Preferably, in the step (2), the heating temperature is (T +20) DEG C to (T +50) DEG C, wherein T is a melting point or a softening point of the adhesion medium; the heating time is 5-30 min.
The invention has the beneficial effects that:
the invention has the advantages of less raw material consumption, low cost, simple steps, simple and convenient operation, high working efficiency and difficult cracking of the substrate, improves the product yield and ensures the benefit of subsequent products.
Drawings
FIG. 1 is a schematic diagram of the operation of the sheeting process of the present invention.
1. Workpiece, 2, adhesive medium, 3, substrate, 4, blade body, 5, blade edge.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
A simple and convenient method for taking off a semiconductor device after thinning a substrate, as shown in figure 1, the semiconductor device comprises a substrate 3 and a workpiece 1 arranged on the substrate 3, the workpiece 1 is arranged on the substrate 3 through an adhesive medium 2, the adhesive medium 2 is solid wax, the softening point of the solid wax is 79 ℃, and the method comprises the following steps:
(1) thinning the substrate 3 by the prior art;
(2) heating the semiconductor device on a flat heater at 105 ℃ for 10min until the adhesive medium 2 is melted; the adhesion medium 2 melts under the influence of the high temperature.
(3) The method comprises the steps of keeping an included angle formed by a blade and the surface of a workpiece 1 to be α degrees, holding the blade to slowly enter a gap between a substrate 3 and the workpiece 1 along the edge of the substrate 3, slowly pushing the substrate 3 until the substrate 3 is completely separated from the workpiece 1, clamping the separated substrate 3 by using tweezers, placing the substrate 3 in a fixed storage workpiece for waiting to be cleaned, and well solving the problem of removing the substrate 3 by virtue of the characteristic that the blade edge 5 is thin and easily penetrates below the substrate 3, so that the working efficiency is improved.
The method solves the problem of low efficiency by using the blade, solves the problem of substrate fragmentation by the requirement of an included angle, and the two directly influence the product yield. With the blade slowly inserted, the substrate 3 is slowly pried up, and after the substrate is completely pried up, the substrate is held up by tweezers and placed in a container for cleaning. If the included angle between the blade and the surface of the workpiece 1 is too low, the blade is easy to scratch the surface of the substrate 3, and if the included angle is too high, the resistance of the blade penetrating into the lower part of the substrate 3 is too large, so that the workpiece 1 is easy to pry and crack. The selection of the angle can avoid scratching the surface of the substrate 3, ensure the integrity of the surface of the substrate 3, prevent the workpiece from being pried and cracked and ensure the integrity of the workpiece 1.
Example 2
The method for simply and conveniently taking down a semiconductor device substrate after thinning according to embodiment 1 is characterized in that:
the adhesive medium 2 is liquid wax with a softening point of 50 ℃;
in the step (2), the heating temperature is 70 ℃, and the heating time is 15 min;
in the step (3), the included angle between the blade and the surface of the workpiece is kept in a direction of α degrees, the thickness of the blade body 4 is 0.1mm, and the thickness of the blade edge 5 is 0.1 mm.
Example 3
The method for simply and conveniently taking down a semiconductor device substrate after thinning according to embodiment 1 is characterized in that:
the adhesive medium 2 is solid wax with the softening point of 98 ℃;
in the step (2), the heating temperature is 130 ℃, and the heating time is 20 min;
in the step (3), an included angle formed between the blade and the surface of the workpiece is kept at α degrees, the thickness of the blade body 4 of the blade is 0.1mm, and the thickness of the blade edge 5 of the blade is 0.02 mm.
Comparing the manual film-taking method in the prior art with the film-taking method of the invention, the effect comparison data is shown in table 1:
TABLE 1
| Sheet unloading method | Efficiency of operation | Rate of splintering | Yield of |
| Manual piece feeding in prior art | 100％ | 5.0％ | 99.0％ |
| Example 1 | 120％ | 2.0％ | 99.9％ |
| Example 2 | 115％ | 1.50％ | 99.8％ |
| Example 3 | 123％ | 1.80％ | 99.9％ |
The invention has the advantages of low raw material consumption, low cost, simple steps and simple and convenient operation, and as can be obviously seen from the table 1, the invention has the advantages of high working efficiency, difficult cracking of the substrate, improved product yield and ensured benefit of subsequent products.
Claims (9)
1. A method for taking off a thinned substrate for a semiconductor device, wherein the semiconductor device comprises the substrate and a workpiece arranged on the substrate, and the workpiece is arranged on the substrate through an adhesive medium, the method is characterized by comprising the following steps:
(1) thinning the substrate;
(2) heating the semiconductor device until the adhesive medium is melted;
(3) slowly feeding the blade into a gap between the substrate and the workpiece along the edge of the substrate, slowly pushing the blade until the substrate is completely separated from the workpiece, and simultaneously clamping and placing the separated substrate by using tweezers;
(4) and cleaning the substrate with the residual adhesive medium on the surface to finish the next piece.
2. A method for detaching a thinned substrate for a semiconductor device according to claim 1, wherein in the step (3), the blade forms an angle of not more than 45 ° with respect to the surface of the workpiece.
3. A method according to claim 1, wherein an angle between said blade and said surface of said workpiece is in a range of 5 to 20 °.
4. A method according to claim 1, wherein an angle between said blade and said workpiece surface is in a range of 5 to 10 °.
5. The method of claim 1, wherein the blade body thickness of the blade is not more than 0.3mm and the blade edge thickness of the blade is not more than 0.1 mm.
6. A method as claimed in claim 1, wherein the blade is made of stainless steel or ceramic.
7. The method of claim 1, wherein in the step (2), the heating temperature is (T +20) DEG C (T +50) DEG C, T being a melting point or a softening point of the adhesion medium; the heating time is 5-30 min.
8. A method for detaching a thinned semiconductor device from a substrate according to claim 1, wherein in the step (2), the semiconductor device is heated by being placed on a flat heater.
9. A method for detaching a thinned substrate for a semiconductor device according to any one of claims 1 to 8, wherein in the step (4), the substrate having the adhesive medium left on the surface thereof is washed by being placed in an organic solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811052709.0A CN110890306A (en) | 2018-09-10 | 2018-09-10 | Simple and convenient substrate thinning and unloading method for semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811052709.0A CN110890306A (en) | 2018-09-10 | 2018-09-10 | Simple and convenient substrate thinning and unloading method for semiconductor device |
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| CN110890306A true CN110890306A (en) | 2020-03-17 |
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| CN201811052709.0A Pending CN110890306A (en) | 2018-09-10 | 2018-09-10 | Simple and convenient substrate thinning and unloading method for semiconductor device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171745A (en) * | 2009-02-06 | 2011-08-31 | 旭硝子株式会社 | Method for manufacturing electronic device and separation apparatus used therefor |
| CN103280423A (en) * | 2013-05-29 | 2013-09-04 | 华进半导体封装先导技术研发中心有限公司 | Technology and system for mechanical bonding disassembling |
| CN103700584A (en) * | 2012-09-27 | 2014-04-02 | 株式会社迪思科 | Surface protecting member and processing method thereof |
| JP2015204383A (en) * | 2014-04-14 | 2015-11-16 | 株式会社ディスコ | tape peeling device |
| TW201545888A (en) * | 2014-02-27 | 2015-12-16 | Tokyo Electron Ltd | Peeling method, computer storage medium, peeling device, and peeling system |
| CN108336219A (en) * | 2018-03-15 | 2018-07-27 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of thin film heteroj structure |
-
2018
- 2018-09-10 CN CN201811052709.0A patent/CN110890306A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171745A (en) * | 2009-02-06 | 2011-08-31 | 旭硝子株式会社 | Method for manufacturing electronic device and separation apparatus used therefor |
| CN103700584A (en) * | 2012-09-27 | 2014-04-02 | 株式会社迪思科 | Surface protecting member and processing method thereof |
| CN103280423A (en) * | 2013-05-29 | 2013-09-04 | 华进半导体封装先导技术研发中心有限公司 | Technology and system for mechanical bonding disassembling |
| TW201545888A (en) * | 2014-02-27 | 2015-12-16 | Tokyo Electron Ltd | Peeling method, computer storage medium, peeling device, and peeling system |
| JP2015204383A (en) * | 2014-04-14 | 2015-11-16 | 株式会社ディスコ | tape peeling device |
| CN108336219A (en) * | 2018-03-15 | 2018-07-27 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of thin film heteroj structure |
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Application publication date: 20200317 |
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