CN110875262B - 半导体器件及其形成方法 - Google Patents
半导体器件及其形成方法 Download PDFInfo
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- CN110875262B CN110875262B CN201910754396.1A CN201910754396A CN110875262B CN 110875262 B CN110875262 B CN 110875262B CN 201910754396 A CN201910754396 A CN 201910754396A CN 110875262 B CN110875262 B CN 110875262B
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Abstract
形成半导体器件的方法包括在衬底的上表面的第一区域中施加粘合材料,其中,施加粘合材料包括:在第一区域的第一位置处施加第一粘合材料;在第一区域的第二位置处施加第二粘合材料,第二粘合材料具有与第一粘合材料不同的材料组分。该方法还包括使用施加在衬底的上表面上的粘合材料将环附接到衬底的上表面,其中,粘合材料在环附接之后位于环和衬底之间。本发明的实施例还涉及半导体器件。
Description
技术领域
本发明的实施例涉及半导体器件及其形成方法。
背景技术
近年来,由于各个电组件(例如,晶体管、二极管、电阻器、电容器等)的集成密度的持续改进,半导体工业已经经历了快速增长。对于大部分而言,这种集成密度的改进来自于最小部件尺寸的连续减小,这使得更多的组件集成到给定的区域。
随着对缩小电子器件的需求的增长,出现了对更小且更具创造性的半导体管芯封装技术的需求。这种封装系统的实例是堆叠封装(PoP)技术。在PoP器件中,顶部半导体封装件堆叠在底部半导体封装件的顶部上,以提供高水平的集成度和组件密度。另一实例是衬底上晶圆上芯片(CoWoS)结构。在一些实施例中,为了形成CoWoS结构,将多个半导体芯片附接到晶圆,并且接下来实施切割工艺以将晶圆分成多个中介层,其中,每个中介层具有与其附接的一个或多个半导体芯片。具有附接的半导体芯片的中介层称为晶圆上芯片(CoW)结构。然后将CoW结构附接到衬底(例如,印刷电路板)以形成CoWoS结构。这些和其他先进的封装技术使得能够生产具有增强的功能和小的占位面积的半导体器件。
发明内容
本发明的实施例公开了一种形成半导体器件的方法,所述方法包括:
在衬底的上表面的第一区域中施加粘合材料,其中,施加所述粘合材料包括:在所述第一区域的第一位置处施加第一粘合材料;在所述第一区域的第二位置处施加第二粘合材料,所述第二粘合材料具有与所述第一粘合材料不同的材料组分;以及使用施加在所述衬底的上表面上的粘合材料将环附接到所述衬底的上表面,其中,所述粘合材料在所述环附接之后位于所述环和所述衬底之间。
本发明的另一实施例公开了一种形成半导体器件的方法,所述方法包括:在衬底的上表面上的区域的第一位置处形成第一粘合材料,所述第一位置包括所述区域的拐角;在与所述第一位置不同的所述区域的第二位置处形成第二粘合材料,所述第二粘合材料是与所述第一粘合材料不同的材料,所述第一粘合材料的杨氏模量小于所述第二粘合材料的杨氏模量;以及使用所述第一粘合材料和所述第二粘合材料将环附接到所述衬底的上表面。
本发明的又一实施例公开了一种半导体器件,包括:衬底;环,附接到所述衬底的上表面;以及粘合材料,位于所述衬底和所述环之间,其中,所述粘合材料包括设置在所述环的拐角下方的第一粘合材料,并且包括设置在所述第一粘合材料之间的第二粘合材料,所述第一粘合材料具有与所述第二粘合材料不同的组分。
附图说明
当结合附图进行阅读时,从以下详细描述可最佳理解本发明的各个方面。应该指出,根据工业中的标准实践,各个部件未按比例绘制。实际上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1示出了根据一些实施例的半导体器件的截面图。
图2示出了根据实施例的图1的半导体器件的顶视图。
图3示出了根据实施例的图1的半导体器件的顶视图。
图4A示出了根据实施例的图1的半导体器件的顶视图。
图4B示出了在实施例中图4A的半导体导体器件沿截面A-A的截面图。
图5示出了根据实施例的图1的半导体器件的顶视图。
图6示出了根据一些实施例的半导体器件的截面图。
图7示出了在一些实施例中形成半导体器件的方法的流程图。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然,这些仅仅是实例,而不旨在限制本发明。例如,以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件可以不直接接触的实施例。此外,本发明可在各个实施例中重复参考标号和/或字符。贯穿描述,除非另有说明,否则不同附图中的相同的参考标号是指通过使用相同或类似的材料的相同或类似的方法形成的相同或类似的组件。
而且,为便于描述,在此可以使用诸如“在…之下”、“在…下方”、“下部”、“在…之上”、“上部”等空间相对术语,以描述如图所示的一个元件或部件与另一个(或另一些)原件或部件的关系。除了图中所示的方位外,空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定向(旋转90度或在其他方位上),而本文使用的空间相对描述符可以同样地作出相应的解释。
图1示出了根据一些实施例的部分半导体器件100的截面图。半导体器件100是CoWoS器件,其中,环131附接到CoWoS器件的衬底的上表面,其细节在下文中讨论。为简单起见,图1仅示出了半导体器件100的左侧部分,并且半导体器件100的右侧部分可以与图1中所示的左侧部分相同(例如,对称)或类似,如本领域技术人员将容易理解的。在图2、图3、图4A和图5中示出了半导体器件100的各个实施例的顶视图。
为了形成半导体器件100,将一个或多个管芯101(也可以称为半导体管芯、芯片或集成电路(IC)管芯)附接到中介层110以形成晶圆上芯片(CoW)结构,并且然后将CoW结构附接到衬底120(例如,印刷电路板)以形成衬底上晶圆上芯片(CoWoS)结构。在一些实施例中,管芯101是相同类型的管芯(例如,存储管芯或逻辑管芯)。在其他实施例中,管芯101具有不同类型,例如,一些管芯101是逻辑管芯而其他管芯101是存储管芯。使用粘合材料133将环131(其可以是矩形环)附接到CoW结构周围的衬底120。粘合材料133可以包括设置在环131下方的不同位置处的不同类型的粘合材料(见例如图2、图3和图4A中的粘合材料133A和粘合材料133B)。在实施例中,粘合材料133A和粘合材料133B都保留在半导体器件100的最终产品中。在另一实施例中,在附接环131之后去除粘合材料(例如,133B)。在又一实施例中,在环131附接到衬底120的上表面之后,将衬底120的下表面附接到工件(例如,母板),并且此后,从半导体器件100去除粘合材料133和环131。在下文中讨论各个实施例的细节。
为了形成CoW结构,将一个或多个管芯101附接到中介层110。管芯101中的每个均包括衬底、形成在衬底内/上的电子组件(例如,晶体管、电阻器、电容器、二极管等)以及位于衬底上方连接电组件以形成管芯101的功能电路的互连结构。管芯101还包括导电柱103(也称为管芯连接件),其提供与管芯101的电路的电连接。
管芯101的衬底可以是掺杂或未掺杂的半导体衬底,或绝缘体上硅(SOI)衬底的有源层。通常,SOI衬底包括半导体材料层,半导体材料诸如硅、锗、硅锗、SOI、绝缘体上硅锗(SGOI)或它们的组合。可以使用的其他衬底包括多层衬底、梯度衬底或混合取向衬底。
管芯101的电子组件包括各种有源器件(例如,晶体管)和无源器件(例如,电容器、电阻器、电感器)等。管芯101的电子组件可以使用任何合适的方法形成在管芯101的衬底内或衬底上。管芯101的互连结构包括形成在一个或多个介电层中的一个或多个金属化层(例如,铜层),并且用于连接各种电子组件以形成功能电路。在实施例中,互连结构由电介质和导电材料(例如,铜)的交替层形成,并且可以通过任何合适的工艺(诸如沉积、镶嵌、双镶嵌等)形成。
可以在管芯101的互连结构上方形成一个或多个钝化层(未示出),以为管芯101的下层结构提供一定程度的保护。钝化层可以由诸如氧化硅、氮化硅、诸如碳掺杂的氧化物的低k电介质、诸如多孔碳掺杂的二氧化硅的极低k电介质、这些的组合等的一种或多种合适的介电材料制成。可以通过诸如化学气相沉积(CVD)的工艺来形成钝化层,但是可以利用任何合适的工艺。
导电焊盘(未示出)可以形成在钝化层上方并且可以延伸穿过钝化层以与管芯101的互连结构电接触。导电焊盘可以包括铝,但可以可选地使用诸如铜的其他材料。
管芯101的导电柱103形成在导电焊盘上,以提供用于电连接到管芯101的电路的导电区域。导电柱103可以是铜柱、诸如微凸块的接触凸块等,并且可以包括诸如铜、锡、银的材料或其他合适材料。
观察中介层110,其包括衬底111、通孔115(也称为衬底通孔(TSV)),以及衬底111的上/下表面上的导电焊盘113/117。图1还示出了中介层110的钝化层119(例如,聚合物层),其覆盖导电焊盘117的至少一部分。此外,中介层110可以包括外部连接件118(也可以称为导电凸块)。
衬底111可以是例如掺杂或未掺杂的硅衬底,或绝缘体上硅(SOI)衬底的有源层。然而,衬底111可以可选地是玻璃衬底、陶瓷衬底、聚合物衬底或可以提供合适的保护和/或互连功能的任何其他衬底。
在一些实施例中,衬底111可以包括电子组件,诸如电阻器、电容器、信号分配电路、这些的组合等。这些电子组件可以是有源的、无源的或它们的组合。在其他实施例中,衬底111中没有有源和无源电子组件。所有这些组合完全旨在包括在本发明的范围内。
通孔115从衬底111的上表面延伸到衬底111的下表面,并在导电焊盘113和117之间提供电连接。通孔115可以由合适的导电材料形成,诸如铜、钨、铝、合金、掺杂多晶硅、它们的组合等。阻挡层可以形成在通孔115和衬底111之间。阻挡层可以包括合适的材料,诸如氮化钛,但是可以可选地利用其他材料,诸如氮化钽,钛等。
外部连接件118形成在导电焊盘117上,并且可以是任何合适类型的外部接触件,诸如微凸块、铜柱、铜层、镍层、无铅(LF)层、化学镀镍化学镀钯浸金(ENEPIG)层、Cu/LF层、Sn/Ag层、Sn/Pb、这些的组合等。
如图1所示,管芯101的导电柱103通过例如焊接区域105接合到中介层110的导电焊盘113。可以实施回流工艺以将管芯101接合到中介层110。
在将管芯101接合到中介层110之后,在管芯101和中介层110之间形成底部填充材料107。底部填充材料107可以包括例如分配在管芯101和中介层110之间的间隙中的液态环氧树脂,例如,使用分配针或其他合适的分配工具,并且然后固化以使其硬化。如图1所示,底部填充材料107填充介于管芯101和中介层110之间的间隙,并且还可以填充管芯101的侧壁之间的间隙。在其他实施例中,省略底部填充材料107。
接下来,在中介层110上方和管芯101周围形成模塑材料109。在形成底部填充材料107的实施例中,模塑材料109还围绕底部填充材料107。作为实例,模塑材料109可包括环氧树脂、有机聚合物、添加或不添加基于二氧化硅的填料或玻璃填料的聚合物或其他材料。在一些实施例中,模塑材料109包括液体模塑化合物(LMC),其在施加时是凝胶型液体。模塑材料109在施加时还可包含液体或固体。可选地,模塑材料109可包括其他绝缘和/或密封材料。在一些实施例中,使用晶圆级模塑工艺来施加模塑材料109。模塑材料109可以使用例如压缩模塑、传递模塑、模塑底部填充(MUF)或其他方法来模塑。
接下来,在一些实施例中,使用固化工艺来固化模塑材料109。固化工艺可包括使用退火工艺或其他加热工艺将模塑材料109加热至预定温度预定的时间段。固化工艺还可包括紫外(UV)曝光工艺、红外(IR)能量曝光工艺、它们的组合或它们与加热工艺的组合。可选地,可以使用其他方法固化模塑材料109。在一些实施例中,不包括固化工艺。
在形成模塑材料109之后,可以实施平坦化工艺,诸如化学和机械平坦化(CMP),以从管芯101上方去除模塑材料109的过量部分,使得模塑材料109和管芯101具有共面的上表面。如图1所示,模塑材料109与衬底111共末端。
在图1的实例中,CoW结构包括中介层110、管芯101、底部填充材料107和模塑材料109。接下来,将CoW结构接合到衬底120,衬底120可以是印刷电路板(PCB),以形成CoWoS结构。
在一些实施例中,观察衬底120,衬底120是多层电路板。例如,衬底120可以包括由双马来酰亚胺三嗪(BT)树脂、FR-4(由编织玻璃纤维布和具有阻燃性的环氧树脂粘合剂组成的复合材料)、陶瓷、玻璃、塑料、胶带、薄膜或其他辅助材料形成的一个或多个介电层121/123/125。衬底120可以包括形成在衬底120中/上的导电部件(例如,导线127和通孔129)。如图1所示,衬底120具有形成在衬底120的上表面上的导电焊盘126,和形成在衬底120的下表面上的导电焊盘128,导电焊盘126/128电耦合到衬底120的导电部件。
将中介层110接合到衬底120。可以实施回流工艺以通过,例如外部连接件118,将中介层110电和机械地耦合到衬底120。接下来,在中介层110和衬底120之间形成底部填充材料112。底部填充材料112可以与底部填充材料107相同或类似,并且可以通过相同或类似的形成方法来形成,因此不再重复细节。在将中介层110接合到衬底120之后,形成图1中的CoWoS结构。
随着越来越多的管芯101集成到CoWoS结构中以为半导体器件提供增强的功能和/或更大的存储容量(例如,内存容量),可以增加中介层110的尺寸和衬底120的尺寸以容纳管芯101。随着衬底120的尺寸增加,越来越难以保持衬底120平坦(例如,具有平坦的上表面和/或平坦的下表面)。衬底120的翘曲可能使得难以将半导体器件100接合到另一工件(例如,衬底120下方的母板,未示出),因为在衬底120的下表面处的导电焊盘128由于衬底120的翘曲而未设置在同一平面中。如果将翘曲的衬底120附接到母板,则可能出现诸如虚焊的问题。类似地,如果衬底120不是平坦的,则可能难以将CoW结构接合到衬底120。
为了控制(例如,减小)衬底120由于其大尺寸引起的翘曲,通过粘合材料133将环131附接到衬底120的上表面,并且用于改善衬底120的平面性(例如,平坦度)。在一些实施例中,环131由刚性材料形成,诸如钢、铜、玻璃等。在实施例中,环131由块状材料(例如,块状钢、块状铜、块状玻璃)形成以提供结构支撑,并且在环131内没有电路。在一些实施例中,将UV发光器件139附接到环131的底部,其细节在下文中讨论。UV发光器件139可以形成为环131的一部分。在所示的实施例中,环131是矩形环(例如,在顶视图中具有中空矩形形状),并且附接到衬底120,从而使得环131围绕CoW结构(例如,围绕管芯101和中介层110)。CoW结构还可以具有矩形顶视图,如图2所示。在一些实施例中,在形成CoWoS结构之后,将环131附接到衬底120的上表面。在其他实施例中,首先将环131附接到衬底120的上表面,并且因此,包括管芯101和中介层110的CoW结构附接到环131内部的衬底120的上表面。
图2示出了根据实施例的在附接环131之后的图1的半导体器件100的顶视图。应该注意,虽然图1示出了半导体器件100的左侧部分,但是图2示出了半导体器件100的左侧部分和右侧部分。为了说明环131下方的粘合材料133(例如,133A和133B)的细节,在图2中未示出环131,应该理解,环131(如果示出)的顶视图将与图2中所示的区域134(例如,中空矩形区域)重叠,其中,区域134对应于由粘合材料133(例如,133A和133B)占据(例如,覆盖)的衬底120的上表面的区域。换句话说,区域134对应于衬底120的表面的位于环131的下方(例如,正下方)的中空矩形区域。
图2示出了管芯101、管芯101周围的模塑材料109。中介层110(见图1)位于管芯101和模塑材料109正下方,因此在图2的顶视图中不可见。图2还示出了模塑材料109周围的底部填充材料112、设置在区域134中的粘合材料133以及衬底120。图2中所示的管芯101的数量和管芯101的位置用于说明目的,而不是限制。管芯的其他数量和管芯101的其他位置也是可能的,并且完全旨在包括在本发明的范围内。
半导体器件100中使用的不同材料具有不同的热膨胀系数(CTE)。例如,管芯101可具有约2.6ppm/℃的CTE,衬底120可具有约8.4ppm/℃的CTE,并且环可具有约17.8ppm/℃的CTE。由于半导体器件100中使用的不同材料的CTE的差异,半导体器件100中存在应力。在半导体器件100的拐角附近(诸如靠近区域134的四个拐角)应力水平可能特别高。如果不加以解决,则应力可能导致半导体器件100中的分层和裂缝。
参考图2,在一些实施例中,为了减轻应力,多种类型的粘合材料(例如,具有不同材料组分的粘合材料),诸如粘合材料133A和粘合材料133B,用于区域134的不同位置处的粘合材料133。例如,在区域134的拐角处使用的粘合材料133B比在拐角以外的区域134的区中使用的粘合材料133A更柔软和/或更有弹性。图2可用于表示两个不同的实施例。在实施例中,在附接环131之后,粘合材料133A和粘合材料133B都保留在半导体器件100的最终产品中。在另一实施例中,沉积在区域134的拐角处的粘合材料133B是牺牲粘合材料,其在环131附接之后被去除,因此,在半导体器件100的最终产品中仅粘合材料133A留在环131下方。下面讨论上述不同实施例的细节。
如图2所示,粘合材料133B包括沉积在区域134的四个拐角处的分离部分。粘合材料133A包括沉积在区域134的未由粘合材料133B占据的其他区中的分离部分。例如,粘合材料133A的部分可以在粘合材料133B的两个分离部分之间的区域134中连续延伸,其中,粘合材料133B的两个分离部分包括设置在区域134的第一拐角处的粘合材料133B的第一部分和设置在区域134的邻近第一拐角的第二拐角处的粘合材料133B的第二部分。可以使用任何合适的沉积方法将粘合材料133A和133B沉积在区域134的相应区中,并且此后,将环131放置在粘合材料133上方并附接到衬底120。
在沉积之后,可以通过固化工艺固化粘合材料133A/133B。固化工艺可在约150℃至约300℃的温度下实施介于约1分钟和约30分钟之间的持续时间。在粘合材料133B是牺牲粘合材料的实施例中,固化工艺固化粘合材料133A并且去除粘合材料133B。在另一实施例中,固化工艺固化粘合材料133A/133B,并且随后实施单独的热工艺以去除粘合材料133B(例如,牺牲粘合材料)。
在图2中,沉积在区域134的两个相邻拐角处的粘合材料133B的分离部分分别具有长度L1和L2,其中,L1和L2沿着区域134的边缘测量,并且区域134的边缘具有长度L。L1和L2的总和与长度L之间的比率(例如,(L1+L2)/L)可以介于约10%和约50%之间,作为示例,但是其他尺寸也是可能的,并且完全旨在包括在本发明的范围内。
在粘合材料133A和粘合材料133B都保留在半导体器件100的最终产品(例如,用于使用的最终产品)中的实施例中,粘合材料133B是弹性粘合材料。例如,粘合材料133B可以是橡胶类粘合材料、硅树脂类粘合材料等。橡胶类粘合材料可包括天然橡胶或合成橡胶,诸如异戊二烯和/或任何其他二烯的聚合物。有机硅类粘合材料可包括例如含有聚硅氧烷主链(例如,Si-O-Si)的聚合物。在一些实施例中,粘合材料133B的杨氏模量(例如,弹性粘合材料)介于约0.0001兆帕(MPa)和约10000MPa之间,诸如介于约0.001MPa和约10MPa之间。在一些实施例中,粘合材料133B的伸长率介于约10%和约1000%之间,诸如介于约50%和约1000%之间。
粘合材料133A比粘合材料133B更硬和/或弹性更小(例如,更刚性)。在一些实施例中,粘合材料133A的杨氏模量介于约0.01千兆帕(GPa)和约5GPa之间。作为示例,粘合材料133A的伸长率介于约20%和约100%之间。粘合材料133A的实例包括环氧树脂等。
弹性粘合材料(例如,粘合材料133B)与粘合材料133的非均质结构一起使用有助于缓和半导体器件100中(例如,在区域134的拐角处)的应力,并且因此减少或防止应力引起的对半导体器件100的损坏(例如,分层、破裂)。
在粘合材料133B是牺牲粘合材料的实施例中,粘合材料133B可以是或包括可热降解材料(也称为热释放材料),诸如具有可热降解功能基团的树脂或聚合物。热降解材料的实例包括丙烯酸酯、甲基丙烯酸酯、羧酸酯等。又例如,粘合材料133B(例如,牺牲粘合材料)可以是或包括可以通过暴露于UV光而去除的UV可降解材料(也称为UV释放材料)。在随后的工艺中,去除粘合材料133B,同时粘合材料133A保持附着至环131和衬底120。因此,在最终产品中,仅粘合材料133A保留在半导体器件100中的环131和衬底120之间。换句话说,在使用粘合材料133B(在其被去除之前)的每个位置处,在环131和衬底120之间存在开口132(例如,空的空间)。因此,在图2和随后的附图中,粘合材料133B的每个位置也标记为开口132,以指示在去除粘合材料133B之后开口132将替换粘合材料133B。在一些实施例中,在将半导体器件100接合到另一工件(例如,母板)之后,去除粘合材料133B。
在一些实施例中,粘合材料133B的杨氏模量(例如,牺牲粘合材料)介于约0.001兆帕(MPa)和约10MPa之间。作为实例,粘合材料133B的伸长率介于约50%和约1000%之间。因此,粘合材料133B(例如,牺牲粘合材料)是柔软和/或弹性材料。粘合材料133A比粘合材料133B更硬和/或弹性更小(例如,更刚性)。粘合材料133A的实例包括环氧树脂等。在一些实施例中,粘合材料133A的杨氏模量介于约0.01千兆帕(GPa)和约5GPa之间。作为实例,粘合材料133A的伸长率介于约20%和约100%之间。
根据粘合材料133B的性质(例如,可热降解材料、UV可降解材料),可以实施不同的工艺以去除粘合材料133B。例如,粘合材料133B可以是热释放材料,在这种情况下,可以例如在介于约200℃和约300℃之间的温度下实施加热工艺介于约1分钟和约60分钟之间的持续时间。加热工艺可以使热释放材料失去其粘合性并与衬底120和环131分离。加热工艺也可以使热释放材料分成小块。在加热工艺之后,可以通过例如清洁工艺(使用清洗流体)或真空工艺(以吸走松散的热释放材料)从半导体器件100去除松散的热释放材料。
作为另一实例,粘合材料133B可以是UV释放材料,在这种情况下,UV光可以用于去除UV释放材料。应该注意,在实施例中,如果UV释放材料用作粘合材料133B,则环131由透明材料(例如,对UV光透明)制成,诸如玻璃,使得UV光(例如,来自环131外部的UV光源)可以穿过环131行进到达粘合材料133B。在另一实施例中,环131具有附接到例如环131的下表面的UV发光器件139(见图1),该下表面面向(例如,附接到)粘合材料133B,在这种情况下,环131可以由对UV光不透明的材料(例如,钢、铜)制成。当UV发光器件139被激活时,生成UV光并照射在粘合材料133B上,从而使得粘合材料133B失去其粘合性并且与衬底120和环131分离。UV光也可以使UV释放材料分成小块。在UV工艺之后,可以通过例如清洁工艺(使用清洗流体)或真空工艺(以吸走松散的UV释放材料)从半导体器件100去除松散的UV释放材料。
在环131附接到衬底120之后可以进行附加工艺。例如,可以将衬底120的下表面粘合到另一工件,诸如母板,从而使得衬底120的导电焊盘128机械和电耦合到工件的导电部件。此处不讨论细节。
图3示出了根据实施例图1的半导体器件100的顶视图。图3中的实施例类似于图2的实施例,但是粘合材料133B的附加部分(标记为133BA)沉积在设置在区域134的四个拐角处的粘合材料133B之间。粘合材料133B的部分133BA包括与粘合材料133B相同的材料(例如,具有相同的组分),并且包括嵌入在粘合材料133A内(例如,与粘合材料133A物理接触)的多个粘合材料带133B。每个带均从衬底120的上表面延伸到环131的下表面。图3中的粘合材料133BA的带的数量和带的位置仅用于说明而非限制,其他数量和其他位置也是可能的,并且完全旨在包括在本发明的范围内。
参考图3,在实施例中,粘合材料133B是弹性粘合材料,并且粘合材料133A和133B都保留在半导体器件100的最终产品中。在另一实施例中,粘合材料133B是牺牲粘合材料,并且例如通过加热工艺或UV工艺去除粘合材料133B,从而使得仅粘合材料133A留在最终产品中。因此,在使用粘合材料133B/133BA(牺牲粘合材料)的每个位置处,在环131和衬底120之间存在开口132(例如,空的空间)。细节与上面参考图2讨论的细节相同或类似,因此不再重复。
图4A示出根据实施例的图1的半导体器件100的顶视图。图4A中的实施例类似于图2的实施例,但是具有形成在区域134的虚线矩形区域中的粘合材料133A下方的粘合材料133B的附加部分(见标记133BB)。换句话说,粘合材料133具有位于虚线矩形区域中的分层结构,该分层结构包括形成在粘合材料133A下方的粘合材料层133B(标记为133BB)。图4B中示出了虚线矩形区域中的粘合材料133的分层结构的细节。
图4B示出了沿着截面A-A的图4A的半导体器件100的部分的截面图。图4B示出了虚线矩形区域(见图4A)中的粘合材料133的分层结构,其包括位于粘合材料层133B(标记为133BB)上方的粘合材料层133A。图4B还示出了层结构下方的衬底120。另外,图4B还示出了粘合材料133A的与层结构相邻并且位于层结构两侧上的部分。如图4B所示,粘合材料133A的位于层结构两侧上的部分的高度等于层结构的高度。
参考图4A和图4B,在实施例中,粘合材料133B是弹性粘合材料,并且粘合材料133A和133B都保留在半导体器件100的最终产品中。在另一实施例中,粘合材料133B是牺牲粘合材料并且例如通过加热工艺或UV工艺去除,从而使得仅粘合材料133A留在最终产品中。因此,在使用粘合材料133B/133BB(在其被去除之前)的每个位置处,在环131和衬底120之间存在开口132(例如,空的空间)。细节与上面参考图2讨论的细节相同或类似,因此不再重复。
图5示出了根据实施例的图1的半导体器件100的顶视图。在图5的实施例中,作为牺牲粘合材料的粘合材料133B在区域134中连续形成以覆盖区域134。换句话说,在该实例中,粘合材料133仅包括粘合材料133B(例如,牺牲粘合材料)。牺牲粘合材料可以具有与上面参考图2所讨论的牺牲粘合材料相同的杨氏模量和相同的伸长率。在CoWoS结构通过位于衬底120的下表面的导电焊盘128附接到例如母板之后,在实施例中,通过例如加热工艺或UV工艺去除粘合材料133B(例如,牺牲粘合材料)。因此,环131也从半导体器件100去除。换句话说,环131和粘合材料133(例如,133B)都从半导体器件100的最终产品去除。
图6示出了根据一些实施例的半导体器件200的截面图。半导体器件200类似于图1的半导体器件100,但是具有附接到环131的盖137。在一些实施例中,盖137可以由与环131相同的材料形成。在其他实施例中,盖137由与环131不同的材料形成。此外,盖137通过粘合材料135附接到管芯101和模塑材料109。粘合材料135可以是用于散热的热界面材料(TIM)。TIM可以包括作为基底材料的聚合物、树脂或环氧树脂以及填料以改善其导热性。填料可以包括介电填料,诸如氧化铝、氧化镁、氮化铝、氮化硼、金刚石粉末等。填料也可以是金属填料,诸如银、铜、铝等。
参考图6,以上参考图2、图3、图4A和图4B讨论的各个实施例可以应用于半导体器件200。例如,粘合材料133可以包括粘合材料133A和粘合材料133B,如在各个实施例中参考图2、图3、图4A和图4B所讨论的。在一些实施例中,粘合材料133B是弹性粘合材料,并且粘合材料133A和133B都保留在半导体器件100的最终产品中。在其他实施例中,粘合材料133B是牺牲粘合材料并且例如,通过加热工艺或UV工艺被去除,从而使得仅粘合材料133A留在最终产品中。细节与上面参考图2、图3、图4A和图4B讨论的细节相同或类似,因此不再重复。
仍然参考图6,在实施例中,粘合材料133B是UV释放材料,环131由诸如玻璃的UV透明材料形成,以用于去除粘合材料133B,并且盖137由有利于散热的与环131不同的材料形成,诸如钢或铜。在另一实施例中,环131和盖137由相同的材料(例如,铜、钢)形成,并且环131包括位于环131的底面处的UV发光器件139。
所公开的实施例的变化是可能的,并且完全旨在包括在本发明的范围内。虽然沉积在区域134的不同位置处的粘合材料133B在所示实施例中是相同的材料,但这些仅仅是非限制性实例。可以在由粘合材料133B占据的区域134的位置处沉积多于一种类型的粘合材料。换句话说,粘合材料133B可以由多于一种类型的粘合材料替换。例如,在图2中,区域134的每个拐角处的粘合材料133B可以由不同的弹性粘合材料形成(例如,每个弹性粘合材料均具有与粘合材料133B相同或类似的杨氏模量和/或伸长率),或者,至少两个拐角上形成有不同的粘合弹性材料。另外,图3中的粘合材料带133BA可包括两种或多种不同的弹性粘合材料,其中,带133BA中的至少两个由不同的弹性材料形成。作为又一实例,在图4A和图4B中,粘合材料133BB可以由不同的弹性粘合材料的两层或多层替换(例如,每种弹性粘合材料均具有与粘合材料133B相同或类似的杨氏模量和/或伸长率)。这些和其他变化完全旨在包括在本发明的范围内。
实施例可以实现许多优势。例如,通过使用更柔软和/或更弹性的粘合材料133B,例如在环131下方的拐角位置处,减轻了由于CTE不匹配导致的半导体器件100中的应力。因此,避免或减少了对半导体器件100的损坏,诸如分层和破裂。环131的使用还有助于改善衬底120的平面性,因此有利于将衬底120附接到另一工件(例如,母板),或用于将CoW结构附接到衬底120。衬底120的改善的平面性使得更容易将衬底120接合到其他器件,并且可以减少或避免诸如虚焊的问题。
图7示出了在一些实施例中形成半导体器件的方法的流程图。应该理解,图7中所示的示例性方法仅仅是许多可能的示例性方法的实例。本领域普通技术人员将认识到许多变化、替换和修改。例如,可以添加、去除、替换、重新布置和重复如图7所示的各个步骤。
参照图7,在框1010处,将粘合材料施加在衬底的上表面的第一区域中,其中,施加粘合材料包括:在第一区域的第一位置处施加第一粘合材料;在第一区域的第二位置处施加第二粘合材料,第二粘合材料具有与第一粘合材料不同的材料组分。在框1020,使用施加在衬底的上表面上的粘合材料将环附接到衬底的上表面,其中,粘合材料在环附接之后位于环和衬底之间。
根据实施例,形成半导体器件的方法包括在衬底的上表面的第一区域中施加粘合材料,其中,施加粘合材料包括:在第一区域的第一位置处施加第一粘合材料;在第一区域的第二位置处施加第二粘合材料,第二粘合材料具有与第一粘合材料不同的材料组分。该方法还包括使用施加在衬底的上表面上的粘合材料将环附接到衬底的上表面,其中,粘合材料在环附接之后位于环和衬底之间。在实施例中,第一粘合材料和第二粘合材料施加在第一区域的不同位置。在实施例中,第一粘合材料包括设置在环的拐角下方的第一分离部分,并且第二粘合材料包括设置在第一粘合材料的第一分离部分之间的第二分离部分。在实施例中,第一粘合材料的杨氏模量小于第二粘合材料的杨氏模量。在实施例中,第一粘合材料的杨氏模量介于0.001MPa和10MPa之间,并且其中,第二粘合材料的杨氏模量介于0.01GPa和5GPa之间。在实施例中,第一粘合材料的伸长率大于第二粘合材料的伸长率。在实施例中,第一粘合材料的伸长率介于50%和1000%之间,并且第二粘合材料的伸长率介于20%和100%之间。在实施例中,该方法还包括将管芯附接到中介层的第一表面;在管芯周围的中介层的第一表面上形成模塑材料;以及将中介层的与第一表面相对的第二表面附接到第一区域内的衬底的上表面,其中,中介层由环包围。在实施例中,该方法还包括,在附接环之后,去除第一粘合材料,同时将第二粘合材料保持在环和衬底之间。在实施例中,去除第一粘合材料包括实施加热工艺以将第一粘合材料与衬底分离,其中,第二粘合材料在加热工艺之后保持附着至衬底。在实施例中,环对紫外(UV)光是透明的,其中,去除第一粘合材料包括:通过环将UV光照射在粘合材料上来实施UV工艺,其中,在UV工艺之后,第一粘合材料与衬底分离,而第二粘合材料保持附着至衬底。在实施例中,环包括位于环的面向粘合材料的底面处的紫外(UV)发光器件,其中,去除第一粘合材料包括:通过激活UV发光器件以将UV光照射在粘合材料上来实施UV工艺,其中,在UV工艺之后,第一粘合材料与衬底分离,而第二粘合材料保持附着至衬底。
根据实施例,形成半导体器件的方法包括在衬底的上表面上的区域的第一位置处形成第一粘合材料,第一位置包括区域的拐角;在与第一位置不同的区域的第二位置处形成第二粘合材料,第二粘合材料是与第一粘合材料不同的材料,第一粘合材料的杨氏模量小于第二粘合材料的杨氏模量;以及使用第一粘合材料和第二粘合材料将环附接到衬底的上表面。在实施例中,该方法还包括将中介层的下侧附接到该区域内的衬底的上表面,其中,管芯附接到中介层的上侧。在实施例中,第一位置还包括在区域的拐角之间的区域中的位置。在实施例中,第一粘合材料的伸长率大于第二粘合材料的伸长率。在实施例中,该方法还包括在附接环之后去除第一粘合材料,其中,第二粘合材料在去除第一粘合材料之后保持附着至衬底和环。
根据实施例,半导体器件包括衬底;附接到衬底的上表面的环;以及位于衬底和环之间的粘合材料,其中,粘合材料包括设置在环的拐角下方的第一粘合材料,并且包括设置在第一粘合材料之间的第二粘合材料,第一粘合材料具有与第二粘合材料不同的组分。在实施例中,第一粘合材料包括设置在环的拐角下方的第一分离部分,第二粘合材料包括设置在第一粘合材料的第一分离部分之间的第二分离部分。在实施例中,第一粘合材料比第二粘合材料更具弹性。
上面概述了若干实施例的特征,使得本领域人员可以更好地理解本发明的方面。本领域人员应该理解,他们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到,这种等同构造并不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,本文中他们可以做出多种变化、替换以及改变。
Claims (20)
1.一种形成半导体器件的方法,所述方法包括:
在衬底的上表面的第一区域中施加粘合材料,其中,施加所述粘合材料包括:
在所述第一区域的第一位置处施加第一粘合材料;
在所述第一区域的第二位置处施加第二粘合材料,所述第二粘合材料具有与所述第一粘合材料不同的材料组分;以及
使用施加在所述衬底的上表面上的第一粘合材料和第二粘合材料将环附接到所述衬底的上表面,其中,所述第一粘合材料和第二粘合材料在所述环附接之后位于所述环和所述衬底之间,
其中,所述第一粘合材料包括设置在所述环的拐角下方的第一分离部分,并且所述第二粘合材料包括设置在所述第一粘合材料的所述第一分离部分之间的第二分离部分,并且所述第一粘合材料比所述第二粘合材料更柔软和/或更有弹性。
2.根据权利要求1所述的方法,其中,所述第一粘合材料和所述第二粘合材料施加在所述第一区域的不同位置处。
3.根据权利要求1所述的方法,其中,所述第一粘合材料是紫外释放材料。
4.根据权利要求3所述的方法,其中,所述第一粘合材料的杨氏模量小于所述第二粘合材料的杨氏模量。
5.根据权利要求4所述的方法,其中,所述第一粘合材料的杨氏模量介于0.001MPa和10MPa之间,并且其中,所述第二粘合材料的杨氏模量介于0.01GPa和5GPa之间。
6.根据权利要求4所述的方法,其中,所述第一粘合材料的伸长率大于所述第二粘合材料的伸长率。
7.根据权利要求6所述的方法,其中,所述第一粘合材料的伸长率介于50%和1000%之间,并且所述第二粘合材料的伸长率介于20%和100%之间。
8.根据权利要求4所述的方法,还包括:
将管芯附接到中介层的第一表面;
在所述管芯周围的所述中介层的第一表面上形成模塑材料;以及
将所述中介层的与所述第一表面相对的第二表面附接到所述第一区域内的所述衬底的上表面,其中,所述中介层由所述环包围。
9.根据权利要求4所述的方法,还包括:
在附接所述环之后,去除所述第一粘合材料,同时将所述第二粘合材料保持在所述环和所述衬底之间。
10.根据权利要求9所述的方法,其中,去除所述第一粘合材料包括:
实施加热工艺以将所述第一粘合材料与所述衬底分离,其中,所述第二粘合材料在所述加热工艺之后保持附着至所述衬底。
11.根据权利要求9所述的方法,其中,所述环对紫外光是透明的,其中,去除所述第一粘合材料包括:
通过所述环将所述紫外光照射在所述粘合材料上来实施紫外工艺,其中,在所述紫外工艺之后,所述第一粘合材料与所述衬底分离,而所述第二粘合材料保持附着至所述衬底。
12.根据权利要求9所述的方法,其中,所述环包括位于所述环的面向所述粘合材料的底面处的紫外发光器件,其中,去除所述第一粘合材料包括:
通过激活所述紫外发光器件以将紫外光照射在所述粘合材料上来实施紫外工艺,其中,在所述紫外工艺之后,所述第一粘合材料与所述衬底分离,而所述第二粘合材料保持附着至所述衬底。
13.一种形成半导体器件的方法,所述方法包括:
在衬底的上表面上的区域的第一位置处形成第一粘合材料,所述第一位置包括所述区域的拐角;
在所述区域的与所述第一位置不同的第二位置处形成第二粘合材料,所述第二粘合材料是与所述第一粘合材料不同的材料,所述第一粘合材料的杨氏模量小于所述第二粘合材料的杨氏模量;以及
使用所述第一粘合材料和所述第二粘合材料将环附接到所述衬底的上表面。
14.根据权利要求13所述的方法,还包括,将中介层的下侧附接到所述区域内的所述衬底的上表面,其中,管芯附接到所述中介层的上侧。
15.根据权利要求13所述的方法,其中,所述第一位置还包括在所述区域的拐角之间的所述区域中的位置。
16.根据权利要求13所述的方法,其中,所述第一粘合材料的伸长率大于所述第二粘合材料的伸长率。
17.根据权利要求13所述的方法,还包括:
在附接所述环之后去除所述第一粘合材料,其中,所述第二粘合材料在去除所述第一粘合材料之后保持附着至所述衬底和所述环。
18.一种半导体器件,包括:
衬底;
环,附接到所述衬底的上表面;以及
粘合材料,位于所述衬底和所述环之间,其中,所述粘合材料包括设置在所述环的拐角下方的第一粘合材料,并且包括设置在所述第一粘合材料之间的第二粘合材料,所述第一粘合材料具有与所述第二粘合材料不同的组分,并且所述第一粘合材料比所述第二粘合材料更柔软和/或更有弹性。
19.根据权利要求18所述的半导体器件,其中,所述第一粘合材料包括设置在所述环的拐角下方的第一分离部分,并且所述第二粘合材料包括设置在所述第一粘合材料的所述第一分离部分之间的第二分离部分。
20.根据权利要求19所述的半导体器件,其中,所述第一粘合材料的杨氏模量介于0.001MPa和10MPa之间,并且其中,所述第二粘合材料的杨氏模量介于0.01GPa和5GPa之间。
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