CN110863247A - 一种碳化硅晶体二次退火方法 - Google Patents
一种碳化硅晶体二次退火方法 Download PDFInfo
- Publication number
- CN110863247A CN110863247A CN201911096313.0A CN201911096313A CN110863247A CN 110863247 A CN110863247 A CN 110863247A CN 201911096313 A CN201911096313 A CN 201911096313A CN 110863247 A CN110863247 A CN 110863247A
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- CN
- China
- Prior art keywords
- silicon carbide
- carbide crystal
- graphite crucible
- temperature
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000013078 crystal Substances 0.000 title claims abstract description 89
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 83
- 238000000137 annealing Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 52
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 70
- 239000010439 graphite Substances 0.000 claims abstract description 70
- 238000001816 cooling Methods 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002994 raw material Substances 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 238000004321 preservation Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000004804 winding Methods 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000012958 reprocessing Methods 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 description 7
- 238000009529 body temperature measurement Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201911096313.0A CN110863247A (zh) | 2019-11-11 | 2019-11-11 | 一种碳化硅晶体二次退火方法 |
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CN201911096313.0A CN110863247A (zh) | 2019-11-11 | 2019-11-11 | 一种碳化硅晶体二次退火方法 |
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CN110863247A true CN110863247A (zh) | 2020-03-06 |
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CN201911096313.0A Pending CN110863247A (zh) | 2019-11-11 | 2019-11-11 | 一种碳化硅晶体二次退火方法 |
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CN (1) | CN110863247A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112694090A (zh) * | 2020-12-18 | 2021-04-23 | 国宏中宇科技发展有限公司 | 一种改进的碳化硅原料合成方法 |
CN113174638A (zh) * | 2021-04-27 | 2021-07-27 | 云南鑫耀半导体材料有限公司 | 一种碳化硅晶体的高温二次退火方法 |
CN116695258A (zh) * | 2023-08-07 | 2023-09-05 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的退火装置和退火方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7767022B1 (en) * | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
CN101984153A (zh) * | 2009-12-24 | 2011-03-09 | 新疆天科合达蓝光半导体有限公司 | 一种降低碳化硅晶体应力的退火工艺 |
CN103114336A (zh) * | 2013-03-12 | 2013-05-22 | 中国科学院上海硅酸盐研究所 | 碳化硅晶片的退火方法 |
CN104357913A (zh) * | 2014-12-07 | 2015-02-18 | 中国电子科技集团公司第四十六研究所 | 一种碳化硅晶体高温退火处理方法 |
TWM497673U (zh) * | 2014-11-03 | 2015-03-21 | Gold Choice Electric Technology Co Ltd | 碳化矽長晶設備 |
CN106480504A (zh) * | 2016-12-09 | 2017-03-08 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
-
2019
- 2019-11-11 CN CN201911096313.0A patent/CN110863247A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7767022B1 (en) * | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
CN101984153A (zh) * | 2009-12-24 | 2011-03-09 | 新疆天科合达蓝光半导体有限公司 | 一种降低碳化硅晶体应力的退火工艺 |
CN103114336A (zh) * | 2013-03-12 | 2013-05-22 | 中国科学院上海硅酸盐研究所 | 碳化硅晶片的退火方法 |
TWM497673U (zh) * | 2014-11-03 | 2015-03-21 | Gold Choice Electric Technology Co Ltd | 碳化矽長晶設備 |
CN104357913A (zh) * | 2014-12-07 | 2015-02-18 | 中国电子科技集团公司第四十六研究所 | 一种碳化硅晶体高温退火处理方法 |
CN106480504A (zh) * | 2016-12-09 | 2017-03-08 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112694090A (zh) * | 2020-12-18 | 2021-04-23 | 国宏中宇科技发展有限公司 | 一种改进的碳化硅原料合成方法 |
CN112694090B (zh) * | 2020-12-18 | 2022-11-29 | 北京汇琨新材料有限公司 | 一种改进的碳化硅原料合成方法 |
CN113174638A (zh) * | 2021-04-27 | 2021-07-27 | 云南鑫耀半导体材料有限公司 | 一种碳化硅晶体的高温二次退火方法 |
CN113174638B (zh) * | 2021-04-27 | 2022-06-03 | 云南鑫耀半导体材料有限公司 | 一种碳化硅晶体的高温二次退火方法 |
CN116695258A (zh) * | 2023-08-07 | 2023-09-05 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的退火装置和退火方法 |
CN116695258B (zh) * | 2023-08-07 | 2024-01-19 | 苏州优晶光电科技有限公司 | 一种碳化硅单晶的退火装置和退火方法 |
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Effective date of registration: 20200722 Address after: 1205, floor 12, building 3, No. 11, Changchun Bridge Road, Haidian District, Beijing 100089 Applicant after: GUOHONG HUAYE INVESTMENT Co.,Ltd. Address before: 100081 building 4, floor 8, No. 9, Haidian District meteorological Road, Beijing City, 418 Applicant before: CISRI ENERGY SAVING TECHNOLOGY Co.,Ltd. |
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