CN110854188A - Low-temperature formed P-type SiC ohmic contact structure and manufacturing method - Google Patents
Low-temperature formed P-type SiC ohmic contact structure and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims description 20
- 239000011259 mixed solution Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
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- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
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- 238000005406 washing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- 238000000861 blow drying Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 101000932768 Conus catus Alpha-conotoxin CIC Proteins 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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Abstract
The invention relates to a low-temperature formed P-type SiC ohmic contact structure and a manufacturing method thereof, wherein in the prior art, a rough ohmic contact surface is caused by high annealing temperature in the ohmic contact forming process, and the capacitance of a grid oxide layer is reduced; sequentially depositing a Ni metal layer, a Si layer and an Al metal layer on the surface of the substrate by utilizing a magnetron sputtering process; and (4) performing rapid annealing treatment to form the structure of the P-type SiC ohmic contact. The P-type SiC ohmic contact provided by the invention has lower forming temperature, improves the reliability of the device and provides favorable conditions for the device process.
Description
Technical Field
The invention belongs to the field of silicon carbide device manufacturing, and particularly relates to a structure for forming a P-type SiC ohmic contact at low temperature and a manufacturing method thereof.
Background
The third generation semiconductor material, silicon carbide, is not attacked by any acid at temperatures as high as 800 c. SiC-based devices have higher breakdown voltages than Si-based devices. SiC devices are thinner and have low on-resistance compared to Si-based devices. SiC has an extremely strong radiation hardness, which means that the radiation does not degrade the electronic properties of SiC to a great extent either. In order to develop the potential of the SiC material in the field of high-temperature, high-power and high-frequency semiconductor devices, a key process problem to be solved is to prepare ohmic contact with high stability and low resistance, and the quality of the ohmic contact directly influences the performance indexes of the devices, such as efficiency, gain, switching speed and the like. The high annealing temperature during the formation of the ohmic contact results in a rough ohmic contact surface and reduces the capacitance of the gate oxide layer, which is undesirable for SiC devices.
For P-type silicon carbide devices, because of the high chemical stability of SiC, conventional TiAl contacts require high temperature annealing (up to 1000 ℃) to enhance the chemical reaction between the contact material and the SiC to form a good ohmic contact. The improved Ni/Ti/Al contact has high chemical reactivity with SiC at temperatures as low as 500 ℃, but ohmic at temperatures of about 800 ℃.
Disclosure of Invention
Aiming at the problem of high annealing temperature in the prior art, the invention provides a Ni/Si/Al structure for forming P-type SiC ohmic contact at low temperature and a manufacturing method thereof.
In order to achieve the above object, the present invention provides a low-temperature forming P-type SiC ohmic contact structure, the structure including: the SiC substrate, and the Ni metal layer, the Si layer and the Al metal layer which are arranged on the surface of the SiC substrate in sequence.
A SiC epitaxial layer is arranged on the SiC substrate layer;
the SiC substrate layer is an N-type heavily doped SiC substrate layer; the SiC epitaxial layer is an N-type lightly doped epitaxial layer; a P-type heavily doped epitaxial layer is arranged on the N-type lightly doped epitaxial layer;
the epitaxial layer is provided with the Ni metal layer; the Si layer is arranged on the Ni metal layer; the Al metal layer is arranged on the Si layer.
Further, N of the SiC-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3；P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3；
Further, the thickness of the Ni metal layer is 80 nm;
further, the thickness of the Si layer is 10-50 nm;
further, the thickness of the Al metal layer is 100 nm.
In order to achieve the purpose, the invention provides a manufacturing method for forming a P-type SiC ohmic contact structure at low temperature, which is characterized by comprising the following steps:
A) manufacturing a SiC substrate;
B) sequentially depositing a Ni metal layer, a Si layer and an Al metal layer on the surface of the SiC epitaxial layer by using a magnetron sputtering process;
C) and performing rapid annealing to form the P-type SiC ohmic contact structure.
Further, in an embodiment of the present invention, the step a includes:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a3, using H2SO4And H2O2The 4H-SiC epitaxial substrate is cleaned by the mixed solution, wherein the volume ratio of the mixed solution to the H is2SO4:H2O2＝7:3。
Further, in an embodiment of the present invention, the step B includes:
b1, depositing the Ni metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 300W, Ar, the pressure is 8mTorr, and the deposition rate is
B2, depositing the Si layer on the surface of the Ni layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 100W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Si layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
Further, in one embodiment of the invention, the vacuum degree in the cavity of the magnetron sputtering cavity is less than or equal to 6e during deposition- 6Torr。
Compared with the prior art, the invention provides the Ni/Si/Al structure for forming the P-type SiC ohmic contact at low temperature and the manufacturing method thereof, and the structure reduces the temperature (as low as 700 ℃) required by ohmic contact annealing under the condition of meeting the ohmic contact resistance requirement of a P-type SiC device, thereby improving the reliability of the device.
Drawings
FIG. 1 is a cross-sectional view of a structure for forming a P-type SiC ohmic contact at a low temperature according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for forming a P-type SiC ohmic contact structure at low temperature according to an embodiment of the present invention;
fig. 3 is a TLM structure layout provided in an embodiment of the present invention;
FIG. 4 is an I-V curve diagram of a P-type SiC ohmic contact structure provided by an embodiment of the present invention after annealing at different temperatures;
FIG. 5 is a graph of the R-d fit of a P-type SiC ohmic contact structure provided by an embodiment of the invention after 700 ℃ annealing.
In fig. 1: 11 is an SiC substrate, 12 is N-Epitaxial layer, 13 is P+The epitaxial layer, 2, 3 and 4 are Ni, Si and Al metal layers, respectively.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a cross-sectional view of a structure for forming a P-type SiC ohmic contact at a low temperature according to an embodiment of the present invention;
SiC N is provided on the SiC substrate 11-An epitaxial layer 12; SiC N-SiC P is provided on the epitaxial layer 12+An epitaxial layer 13;
SiC P+an Ni metal layer 2 is arranged on the epitaxial layer 13, a Si layer 3 is arranged on the Ni metal layer 2, and an Al metal layer 4 is arranged on the Si layer 3;
specifically, the SiC substrate 11 is an N-type heavily doped SiC substrate; the SiC N-The epitaxial layer 12 is an N-type lightly doped epitaxial layer; the SiC P+The epitaxial layer 13 is a P-type heavily doped epitaxial layer;
specifically, SiC N-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3。
In particular, SiC P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3
Specifically, the thickness of the Ni metal layer is 80nm, the thickness of the Si layer is 10-50nm, and the thickness of the Al metal layer is 100 nm.
As shown in fig. 2, a flowchart of a method for manufacturing a structure for forming a P-type SiC ohmic contact at a low temperature according to an embodiment of the present invention includes the following steps:
A) manufacturing a SiC substrate;
B) sequentially depositing a Ni metal layer, a Si layer and an Al metal layer on the surface of the SiC epitaxial layer by using a magnetron sputtering process;
C) and performing rapid annealing to form the P-type SiC ohmic contact structure.
Step a may comprise:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a1.1, with H2SO4And H2O2The mixed solution of (a) is washed and waits for cooling,deionized water flushing and nitrogen blow-drying, wherein H2SO4And H2O2Volume ratio H in the mixed solution2SO4:H2O2＝7:3；
A1.2 with NH4OH、H2O2Cleaning with DIW mixed solution for 2min, washing with deionized water, blowing with nitrogen, wherein NH is used4OH、H2O2Volume ratio NH in mixed solution with DIW4OH:H2O2:DIW＝1:1:6；
A1.3 with HCl, H2O2Cleaning with DIW mixed solution for 2min, washing with deionized water, blowing with nitrogen, wherein HCl and H are used2O2H and HCl in volume ratio in mixed solution of the HCl and the DIW2O2:DIW＝1:1:6；
A1.4, cleaning with BOE for 2min, washing with deionized water, and blow-drying with nitrogen, wherein the volume ratio of the BOE is 1:20 or 1: 7.
A2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a2.1, pretreating the SiC sample at 150 ℃ for 5-10 min;
a2.2, coating photoresist on the front side of the SiC sample and spin coating;
a2.3, pre-drying the spin-coated SiC sample at 100 ℃ for 1-2 min;
a2.4, exposing the sample by using a photoetching mask;
a2.5, developing the sample by using a developing solution for 85 +/-5 seconds;
a2.6, hardening the exposed SiC sample at 110 ℃ for 90-120 s;
a2.7, using a degumming machine to carry out degumming treatment on the sample wafer, wherein the power is 200-.
A2.8, using the photoresist as a mask, and etching the SiC epitaxial layer by a dry method, wherein the etching depth is 2 μm, the etching power is 100W, and the etching time is 220-240 s;
a3, using H2SO4:H2O2The 4H-SiC epitaxial substrate was cleaned with a 7:3 solution.
Preferably, step B may comprise:
b1, depositing the Ni metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 300W, Ar, the pressure is 8mTorr, and the deposition rate is
B1.1, pretreating the SiC sample at 150 ℃ for 5-10 min;
b1.2, coating photoresist on the front side of the SiC sample and spin coating;
b1.3, pre-drying the spin-coated SiC sample at 95 ℃ for 90-120 s;
b1.4, exposing the sample by using a photoetching mask;
b1.5, hardening the exposed SiC sample at 110 ℃ for 60-90 s;
b1.6, carrying out photoresist reversal exposure treatment on the hardened SiC sample;
b1.7, developing the sample by using 3038 developing solution for 45 +/-5 seconds;
b1.8, carrying out photoresist removing treatment on the sample wafer by using a photoresist remover, wherein the power is 300W;
b1.9, sputtering a Ni metal layer by using a magnetron sputtering method.
B2, depositing the Si layer on the surface of the Ni layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 100W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Si layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
Wherein the vacuum degree in the cavity of the magnetron sputtering cavity during deposition in the step B is less than or equal to 6e-6Torr。
Preferably, the thickness of the Ni metal layer is 80nm, the thickness of the Si layer is 10-50nm, and the thickness of the Al metal layer is 100 nm.
Preferably, step C may comprise:
and C1, stripping the non-TLM pattern part metal.
C1.1, ultrasonically cleaning for 10 +/-1 min by using an acetone solution, flushing by using deionized water, and drying by using nitrogen;
c1.2, ultrasonically cleaning for 10 +/-1 min by using an isopropanol solution, flushing by using deionized water, and drying by using nitrogen.
C2, introducing N into an annealing furnace25min。
C3, placing the slices, heating to 450 ℃ for 30s, and then heating to 700/750/800/850/900 ℃ for 2 min.
C4, cooling to below 50 ℃, and taking out the slices.
Preferably, the TLM pattern has a transmission distance of 10-150 μm, as shown in FIG. 3.
As shown in FIGS. 4 and 5, the Ni/Si/Al structure of the P-type SiC ohmic contact reduces the temperature (as low as 700 ℃) required by ohmic contact annealing under the condition of meeting the ohmic contact resistance requirement of a P-type SiC device, and improves the reliability of the device. The reason why the annealing temperature is likely to be lowered is that the reaction compound is generated in advance due to the addition of Si, and the reaction of combination proceeds in advance.
In summary, the embodiments of the present invention are described herein by using specific examples, and the descriptions of the above examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (7)
1. A low temperature formed P-type SiC ohmic contact structure, comprising: the SiC substrate, and the Ni metal layer, the Si layer and the Al metal layer which are arranged on the surface of the SiC substrate in sequence.
2. The low-temperature formed P-type SiC ohmic contact structure of claim 1, wherein the SiC substrate layer is provided with SiC N-Epitaxial layer of said N-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3(ii) a The SiC N-On the epitaxial layer is provided with SiC P+Epitaxial layer of SiC P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3。
3. The low-temperature-formed P-type SiC ohmic contact structure of claim 1, wherein the Ni metal layer has a thickness of 80nm, the Si layer has a thickness of 10-50nm, and the Al metal layer has a thickness of 100 nm.
4. The method for manufacturing the low-temperature formed P-type SiC ohmic contact structure according to claim 1, wherein the method comprises the following steps:
A) manufacturing a SiC substrate;
B) sequentially depositing a Ni metal layer, a Si layer and an Al metal layer on the surface of the SiC epitaxial layer by using a magnetron sputtering process;
C) and performing rapid annealing to form the P-type SiC ohmic contact structure.
5. The manufacturing method of forming the P-type SiC ohmic contact structure at the low temperature according to claim 4, wherein the step A comprises:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a3, using H2SO4And H2O2To the outside of the 4H-SiCCleaning along the substrate, wherein the volume ratio of the mixed solution is H2SO4:H2O2＝7:3。
6. The method for manufacturing the low-temperature formed P-type SiC ohmic contact structure according to claim 4, wherein the step B comprises the following steps:
b1, depositing the Ni metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 300W, Ar, the pressure is 8mTorr, and the deposition rate is
B2, depositing the Si layer on the surface of the Ni layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 100W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Si layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
7. The method for forming a P-type SiC ohmic contact structure at a low temperature according to claim 4, wherein a degree of vacuum in a cavity of a magnetron sputtering cavity during deposition is less than or equal to 6e-6Torr。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012099752A (en) * | 2010-11-05 | 2012-05-24 | Mitsubishi Electric Corp | Silicon carbide semiconductor device and manufacturing method thereof |
| CN109786447A (en) * | 2017-11-13 | 2019-05-21 | 比亚迪股份有限公司 | A kind of p-type SiC ohmic contact material and preparation method thereof |
| CN109979813A (en) * | 2019-03-28 | 2019-07-05 | 厦门市三安集成电路有限公司 | A kind of preparation method and metal structure of cryogenic carbon SiClx Ohmic contact |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012099752A (en) * | 2010-11-05 | 2012-05-24 | Mitsubishi Electric Corp | Silicon carbide semiconductor device and manufacturing method thereof |
| CN109786447A (en) * | 2017-11-13 | 2019-05-21 | 比亚迪股份有限公司 | A kind of p-type SiC ohmic contact material and preparation method thereof |
| CN109979813A (en) * | 2019-03-28 | 2019-07-05 | 厦门市三安集成电路有限公司 | A kind of preparation method and metal structure of cryogenic carbon SiClx Ohmic contact |
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Application publication date: 20200228 |