CN110854189A - P-type silicon carbide ohmic contact structure and manufacturing method - Google Patents
P-type silicon carbide ohmic contact structure and manufacturing method Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 84
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 35
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 230000006835 compression Effects 0.000 abstract description 3
- 238000007906 compression Methods 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 101000932768 Conus catus Alpha-conotoxin CIC Proteins 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a P-type silicon carbide ohmic contact structure and a manufacturing method thereof, comprising the following steps: selecting a SiC epitaxial substrate; sequentially depositing a Cu metal layer, a Ti metal layer and an Al metal layer on the surface of the substrate by utilizing a magnetron sputtering process; and (4) performing rapid annealing treatment to form the structure of the P-type silicon carbide ohmic contact. The P-type silicon carbide ohmic contact structure provided by the invention is applied with the Cu metal material, can be combined with a power element compression joint packaging technology of sintered copper, and both ohmic contact and packaging are applied with the Cu metal, so that the ohmic contact structure has consistent thermal expansion coefficient and higher applicability, and is favorable for improving the reliability of devices; and process costs can be saved.
Description
Technical Field
The invention belongs to the field of silicon carbide device manufacturing, and particularly relates to a P-type SiC/Cu/Ti/Al ohmic contact structure and a manufacturing method thereof.
Background
Compared with the traditional germanium and silicon materials, the third generation wide band gap semiconductor silicon carbide mainly has the following advantages: the electric field bearing capacity is about ten times of that of silicon material, the forbidden band width is about three times of that of silicon material, and the heat conductivity is about three times of that of silicon material. The above material characteristics make it exhibit incomparable advantages over conventional silicon-based devices under conditions of extreme temperature (especially high temperature) and large voltage, high frequency and power, and strong radiation.
Ohmic contacts are a key process technology in semiconductor manufacturing, and the purpose of the ohmic contacts is to make the voltage matrix at the contacts small enough to not affect the performance of the device when a voltage is applied to the semiconductor material. If the reliability of the ohmic contact resistance is poor, the on-resistance of the device is increased, and the performance of the device is seriously affected. Researchers have studied the Cu/Si/Cu multilayer contact structure on n-type 4H-SiC substrates as a reliable power device ohmic contact technology, and copper silicide contacts are expected to be thermally stable at high operating temperatures. Copper suicide is believed to provide low contact resistance for device metallization because it does not react with carbon. It can be seen that Cu is a new material that can be used for ohmic contacts.
Disclosure of Invention
In view of the above background, the present invention proposes to realize a P-type silicon carbide Cu/Ti/Al ohmic contact structure and a manufacturing method.
In order to achieve the above object, the present invention provides a P-type silicon carbide ohmic contact structure, comprising: the silicon carbide substrate comprises a silicon carbide substrate, and a Cu metal layer, a Ti metal layer and an Al metal layer which are sequentially arranged on the surface of the silicon carbide substrate.
The silicon carbide substrate layer is provided with a silicon carbide epitaxial layer;
the silicon carbide substrate layer is an N-type heavily-doped silicon carbide substrate layer; the silicon carbide epitaxial layer is an N-type lightly doped epitaxial layer; a P-type heavily doped epitaxial layer is arranged on the N-type lightly doped epitaxial layer;
the Cu metal layer is arranged on the epitaxial layer; the Ti metal layer is arranged on the Cu metal layer; the Al metal layer is arranged on the Ti metal layer.
Further, N of the silicon carbide-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3；P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3；
Further, the thickness of the Cu metal layer is 5-80 nm;
further, the thickness of the Ti metal layer is 25 nm;
further, the thickness of the Al metal layer is 100 nm.
In order to achieve the purpose, the invention provides a method for manufacturing a P-type silicon carbide ohmic contact structure, which is characterized by comprising the following steps:
A) manufacturing a silicon carbide substrate;
B) sequentially depositing a Cu metal layer, a Ti metal layer and an Al metal layer on the surface of the silicon carbide epitaxial layer by utilizing a magnetron sputtering process;
C) and performing rapid annealing to form the P-type silicon carbide ohmic contact structure.
Further, in an embodiment of the present invention, the step a includes:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a3, using H2SO4And H2O2Cleaning the 4H-SiC epitaxial substrate by using the mixed solution, wherein H is2SO4And H2O2H in the mixed solution2SO4:H2O2＝7:3。
Further, in an embodiment of the present invention, the step B includes:
b1, depositing the Cu metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 250W, Ar, the pressure is 5mTorr, and the deposition rate is
B2, depositing the Ti metal layer on the surface of the Cu layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 350W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Ti metal layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
Further, in one embodiment of the invention, the vacuum degree in the cavity of the magnetron sputtering cavity is less than or equal to 6e during deposition- 6Torr。
Compared with the prior art, the invention provides a P-type silicon carbide Cu/Ti/Al ohmic contact structure and a manufacturing method thereof, the structure can be combined with a power element compression joint packaging technology of sintered copper by applying a Cu metal material under the condition of meeting the ohmic contact resistance requirement of a P-type silicon carbide device, both ohmic contact and packaging are applied by Cu metal, the thermal expansion coefficient is consistent, and the structure has applicability, thereby being beneficial to improving the reliability of the device; and process costs can be saved.
Drawings
FIG. 1 is a cross-sectional view of a P-type silicon carbide ohmic contact according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for fabricating a P-type silicon carbide ohmic contact structure according to an embodiment of the present invention;
fig. 3 is a TLM structure layout provided in an embodiment of the present invention;
FIG. 4 is an I-V plot of a P-type silicon carbide ohmic contact structure provided by an embodiment of the present invention after annealing at different temperatures;
FIG. 5 is a graph of the R-d fit of a P-type silicon carbide ohmic contact structure provided by an embodiment of the invention after annealing at 850 ℃.
In fig. 1: 11 is a silicon carbide substrate, 12 is N-Epitaxial layer, 13 is P+The epitaxial layer, 2, 3 and 4 are Cu, Ti and Al metal layers, respectively.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a cross-sectional view of a P-type silicon carbide ohmic contact according to an embodiment of the present invention, as shown in the figure:
silicon carbide N is arranged on the silicon carbide substrate 11-An epitaxial layer 12; silicon carbide N-Silicon carbide P is provided on the epitaxial layer 12+An epitaxial layer 13;
silicon carbide P+A Cu metal layer 2 is arranged on the epitaxial layer 13, a Ti metal layer 3 is arranged on the Cu metal layer 2, and an Al metal layer 4 is arranged on the Ti metal layer 3;
specifically, the silicon carbide substrate 11 is an N-type heavily doped silicon carbide substrate; the silicon carbide N-The epitaxial layer 12 is an N-type lightly doped epitaxial layer; the silicon carbide P+The epitaxial layer 13 is a P-type heavily doped epitaxial layer;
specifically, silicon carbide N-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3。
In particular, silicon carbide P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3
Specifically, the thickness of the Cu metal layer is 5-80nm, the thickness of the Ti metal layer is 25nm, and the thickness of the Al metal layer is 100 nm.
Fig. 2 is a flowchart of a method for fabricating a P-type silicon carbide ohmic contact structure according to an embodiment of the present invention, which includes the following steps:
A) manufacturing a silicon carbide substrate;
B) sequentially depositing a Cu metal layer, a Ti metal layer and an Al metal layer on the surface of the silicon carbide epitaxial layer by utilizing a magnetron sputtering process;
C) and performing rapid annealing to form the P-type silicon carbide ohmic contact structure.
Preferably, step a may comprise:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a1.1, with H2SO4And H2O2The mixed solution is cleaned and cooled, washed by deionized water and dried by nitrogen, wherein H2SO4And H2O2Volume ratio H in the mixed solution2SO4:H2O2＝7:3；
A1.2 with NH4OH、H2O2Cleaning with DIW mixed solution for 2min, washing with deionized water, blowing with nitrogen, wherein NH is used4OH、H2O2Volume ratio NH in mixed solution with DIW4OH:H2O2:DIW＝1:1:6；
A1.3 with HCl, H2O2Cleaning with DIW mixed solution for 2min, washing with deionized water, blowing with nitrogen, wherein HCl and H are used2O2H and HCl in volume ratio in mixed solution of the HCl and the DIW2O2:DIW＝1:1:6；
A1.4, cleaning with BOE for 2min, washing with deionized water, and blow-drying with nitrogen, wherein the volume ratio of the BOE is 1:20 or 1: 7.
A2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a2.1, pretreating a silicon carbide sample at 150 ℃ for 5-10 min;
a2.2, coating photoresist on the front side of the silicon carbide sample and spin coating;
a2.3, pre-drying the silicon carbide sample subjected to spin coating at 100 ℃ for 1-2 min;
a2.4, exposing the sample by using a photoetching mask;
a2.5, developing the sample by using a developing solution for 85 +/-5 seconds;
a2.6, hardening the exposed silicon carbide sample at 110 ℃ for 90-120 s;
a2.7, using a degumming machine to carry out degumming treatment on the sample wafer, wherein the power is 200-.
A2.8, using the photoresist as a mask, and etching the silicon carbide epitaxial layer by a dry method, wherein the etching depth is 2 μm, the etching power is 100W, and the etching time is 220-240 s;
a3, using H2SO4:H2O2The 4H-SiC epitaxial substrate was cleaned with a 7:3 solution.
Preferably, step B may comprise:
b1, depositing the Cu metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 250W, Ar, the pressure is 5mTorr, and the deposition rate is
B1.1, pretreating the silicon carbide sample at 150 ℃ for 5-10 min;
b1.2, coating photoresist on the front side of the silicon carbide sample and spin coating;
b1.3, pre-drying the silicon carbide sample subjected to spin coating at 95 ℃ for 90-120 s;
b1.4, exposing the sample by using a photoetching mask;
b1.5, hardening the exposed silicon carbide sample at 110 ℃ for 60-90 s;
b1.6, carrying out photoresist reversal exposure treatment on the hardened silicon carbide sample;
b1.7, developing the sample by using 3038 developing solution for 45 +/-5 seconds;
b1.8, carrying out photoresist removing treatment on the sample wafer by using a photoresist remover, wherein the power is 300W;
b1.9, sputtering a Cu metal layer by using a magnetron sputtering method.
B2, depositing the Ti layer on the surface of the Cu layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 350W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Ti layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
Wherein the vacuum degree in the cavity of the magnetron sputtering cavity during deposition in the step B is less than or equal to 6e-6Torr。
Preferably, the thickness of the Cu metal layer is 5-80nm, the thickness of the Ti layer is 25nm, and the thickness of the Al metal layer is 100 nm.
Preferably, step C may comprise:
and C1, stripping the non-TLM pattern part metal.
C1.1, ultrasonically cleaning for 10 +/-1 min by using an acetone solution, flushing by using deionized water, and drying by using nitrogen;
c1.2, ultrasonically cleaning for 10 +/-1 min by using an isopropanol solution, flushing by using deionized water, and drying by using nitrogen.
C2, introducing N into an annealing furnace25min。
C3, placing the slices, heating to 450 ℃ for 30s, and then heating to 850/900/950/1000 ℃ for 2 min.
C4, cooling to below 50 ℃, and taking out the slices.
Preferably, the TLM pattern has a transmission distance of 10-150 μm, as shown in FIG. 3.
As shown in fig. 4 and 5, the Cu/Ti/Al structure of the P-type silicon carbide ohmic contact can be combined with the power element compression joint packaging technology of sintered copper by applying a Cu metal material under the condition that the ohmic contact resistance requirement of the P-type silicon carbide device is met, and both the ohmic contact and the packaging are made of Cu metal, so that the thermal expansion coefficient is consistent, and the Cu/Ti/Al structure has applicability, thereby being beneficial to improving the reliability of the device; and process costs can be saved.
In summary, the embodiments of the present invention are described herein by using specific examples, and the descriptions of the above examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (6)
1. A P-type silicon carbide ohmic contact structure, comprising: the silicon carbide substrate comprises a silicon carbide substrate, and a Cu metal layer, a Ti metal layer and an Al metal layer which are sequentially arranged on the surface of the silicon carbide substrate; the thickness of the Cu metal layer is 5-80nm, the thickness of the Ti metal layer is 25nm, and the thickness of the Al metal layer is 100 nm.
2. The P-type silicon carbide ohmic contact structure of claim 1, wherein the silicon carbide substrate layer has silicon carbide N thereon-Epitaxial layer of said N-The epitaxial layer has a thickness of 8-10 μm and a doping concentration of 8 × 1015-1×1016cm-3(ii) a The silicon carbide N-Silicon carbide P on the epitaxial layer+Epitaxial layer of silicon carbide P+The epitaxial layer has a thickness of 2 μm and a doping concentration of 9 × 1018-1×1019cm-3。
3. The method as claimed in claim 1, wherein the method comprises:
A) manufacturing a silicon carbide substrate;
B) sequentially depositing a Cu metal layer, a Ti metal layer and an Al metal layer on the surface of the silicon carbide epitaxial layer by utilizing a magnetron sputtering process;
C) and performing rapid annealing to form the P-type silicon carbide ohmic contact structure.
4. The method as claimed in claim 3, wherein the step A comprises:
a1, selecting a 4H-SiC epitaxial substrate and carrying out standard RCA cleaning on the 4H-SiC epitaxial substrate;
a2, manufacturing a 2-micrometer table top on the 4H-SiC substrate by utilizing photoetching and etching processes so as to facilitate the isolation of a subsequent test model;
a3, using H2SO4And H2O2Cleaning the 4H-SiC epitaxial substrate by using the mixed solution, wherein H is2SO4And H2O2H in the mixed solution2SO4:H2O2＝7:3。
5. The method as claimed in claim 3, wherein step B comprises:
b1, depositing the Cu metal layer on the surface of the substrate by using a direct-current magnetron sputtering process; the deposition power of the direct current magnetron sputtering process is 250W, Ar, the pressure is 5mTorr, and the deposition rate is
B2, depositing the Ti metal layer on the surface of the Cu layer by using a direct-current magnetron sputtering process; the deposition power of the radio frequency magnetron sputtering process is 350W, Ar, the pressure is 5mTorr, and the deposition rate is
B3, depositing the Al metal layer on the surface of the Ti layer by using a direct-current magnetron sputtering process; the deposition power of the direct-current magnetron sputtering process is 350W, Ar, the pressure is 4mTorr, and the deposition rate is
6. The method according to claim 3, wherein the deposition process has a vacuum degree of less than or equal to 6e-6Torr。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227319A (en) * | 2007-03-15 | 2008-09-25 | Shindengen Electric Mfg Co Ltd | Manufacturing method of silicon carbide semiconductor device |
| CN106847895A (en) * | 2016-12-14 | 2017-06-13 | 西安电子科技大学 | GaN base HEMT and preparation method based on TiN/Cu/Ni gate electrodes |
| CN107546113A (en) * | 2017-07-18 | 2018-01-05 | 西安电子科技大学 | High-temperature resistant silicon carbide ohmic contact structure preparation method and its structure |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227319A (en) * | 2007-03-15 | 2008-09-25 | Shindengen Electric Mfg Co Ltd | Manufacturing method of silicon carbide semiconductor device |
| CN106847895A (en) * | 2016-12-14 | 2017-06-13 | 西安电子科技大学 | GaN base HEMT and preparation method based on TiN/Cu/Ni gate electrodes |
| CN107546113A (en) * | 2017-07-18 | 2018-01-05 | 西安电子科技大学 | High-temperature resistant silicon carbide ohmic contact structure preparation method and its structure |
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