CN110846621A - 一种制备大面积单层二碲化钒材料的两步气相方法 - Google Patents

一种制备大面积单层二碲化钒材料的两步气相方法 Download PDF

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CN110846621A
CN110846621A CN201911093519.8A CN201911093519A CN110846621A CN 110846621 A CN110846621 A CN 110846621A CN 201911093519 A CN201911093519 A CN 201911093519A CN 110846621 A CN110846621 A CN 110846621A
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vanadium
ditelluride
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杨万丽
陈鑫
孙艳
刘从峰
戴宁
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Shanghai Institute of Technical Physics of CAS
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Abstract

本发明公开了一种制备大面积单层二碲化钒材料的两步气相方法，该制备过程分为两步：先用化学气相沉积、热蒸发或溅射法三种化学或物理气相方法制备，在尺寸为1～100cm2的硅、二氧化硅、二氧化钛、三氧化二铝或碳化硅衬底上沉积厚度为2～50nm钒氧化物薄膜，沉积温度为100～500℃，沉积时间为10分钟～24小时；再在惰性气体或氢气气氛下，将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，反应温度为550～800℃，反应气压为100～800帕，反应时间为1分钟～30分钟，自然冷却后得到大面积单层二碲化钒材料。本发明的优点是：反应简单，可控性好，能在100cm2的衬底上制备出均一、稳定的单层二碲化钒材料。该发明制备的单层二碲化钒材料，在二维金属和半导体材料的制备及应用等方面有重要意义。

Description

一种制备大面积单层二碲化钒材料的两步气相方法
技术领域
本发明属于材料制备领域，涉及气相沉积技术，具体指一种制备大面积单层二碲化钒材料的两步气相方法。
背景技术
近年来，二维(2D)材料因其作为高性能的功能性纳米材料的潜在应用而受到广泛关注。超薄二维过渡金属双卤代烷(TMDs)因其优异的电学、光学和电化学等性能而受到广泛研究。超薄二硫化钒是除石墨烯外的二维材料中的一种金属材料，其电子结构中不存在带隙。对二硫化钒的研究揭示了它在超级电容器、电池材料、电催化剂、水分传感器等方面的广泛应用。鉴于二硫化钒的优异性能，对二碲化钒进行研究是必要的。
然而，一般的化学、物理法难以制备出厚度仅为几个原子层的二碲化钒。目前制备单层二碲化钒的方法主要有机械剥离法、液相剥离法和以惰性非金属材料(如二氧化硅/硅，三氧化二铝等)为生长基体的化学气相沉积法。前两种方法产量小，效率低，重复性差，不能大面积得到单层二碲化钒。相比于前两种方法，传统的化学气相沉积法由于范德华外延生长机制，所得材料的层数可控性差，难以获得大面积均一的单层材料，并且材料晶粒尺寸小，存在大量的碲原子空位碲原子空位等结构缺陷。因此,获得大面积单层结构一直是进一步应用二碲化钒材料的基础，更是技术难题。
发明内容
本发明的目的是提供一种制备大面积单层二碲化钒的两步气相方法。该方法反应简单，可控性好，能在100cm2的衬底上制备出均匀的单层二碲化钒。
本发明所涉及的一种制备大面积单层二碲化钒材料的两步气相方法包括如下步骤：
先用化学气相沉积、热蒸发或溅射法三种化学或物理气相方法在尺寸为1～100cm2的硅、二氧化硅、二氧化钛、三氧化二铝或碳化硅衬底上沉积厚度为2～50nm钒氧化物薄膜，沉积温度为100～500℃，沉积时间为10分钟～24小时；再在惰性气体或氢气气氛下，将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，反应温度为550～800℃，反应气压为100～800帕，反应时间为1分钟～30分钟，自然冷却后得到大面积单层二碲化钒材料。
本发明的优点是：反应简单，可控性好，能在100cm2的衬底上制备出均一、稳定的单层二碲化钒材料。
具体实施方式
实施例1：
先在沉积温度为500℃条件下，用热蒸发法分别在尺寸为1cm2的硅和30cm2二氧化钛衬底上沉积厚度为2纳米钒氧化物薄膜，沉积时间为10分钟；再在氩气气氛下，反应温度为550℃，反应气压为300帕条件下，将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，反应时间为30分钟，自然冷却后得到大面积单层二碲化钒材料。
实施例2：
先在沉积温度为100℃条件下，用化学气相沉积法在尺寸为100cm2的二氧化硅和4cm2的三氧化二铝衬底上沉积厚度为50纳米钒氧化物薄膜，沉积时间为24小时；再在氢气气氛下，反应温度为800℃，反应气压为800帕，将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，反应时间为10分钟，自然冷却后得到大面积单层二碲化钒材料。
实施例3：
先在沉积温度为200℃条件下，用溅射法在尺寸为50cm2的碳化硅衬底上沉积厚度为10纳米钒氧化物薄膜，沉积时间为4小时；再在氮气气氛下，反应温度为700℃，反应气压为100帕，将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，反应时间为1分钟，自然冷却后得到大面积单层二碲化钒材料。

Claims (3)

1.一种制备大面积单层二碲化钒材料的两步气相方法，其特征在于，包括如下步骤：
1)先在衬底上沉积钒氧化物薄膜；
2)再在惰性气体或氢气气氛下,将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应，自然冷却后得到大面积单层二碲化钒材料。
2.根据权利要求1所述的一种制备大面积单层二碲化钒材料的两步气相方法，其特征在于，步骤1)中所述的钒氧化物薄膜制备温度为100℃到500℃，时间为10分钟到24小时，衬底为尺寸为1～100cm2的硅、二氧化硅、二氧化钛、三氧化二铝或碳化硅，通过化学气相沉积、热蒸发或溅射法三种化学或物理气相方法制备，沉积厚度为2～50nm。
3.根据权利要求1所述的一种制备大面积单层二碲化钒材料的两步气相方法，其特征在于，步骤2)中所述的化学反应温度为550～800℃，反应气压为100～800帕，反应时间为1～30分钟。
CN201911093519.8A 2019-11-11 2019-11-11 一种制备大面积单层二碲化钒材料的两步气相方法 Pending CN110846621A (zh)

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CN111874876A (zh) * 2020-08-12 2020-11-03 湖北工业大学 一种采用新原料生长碲化铜的方法、碲化铜及应用

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111874876A (zh) * 2020-08-12 2020-11-03 湖北工业大学 一种采用新原料生长碲化铜的方法、碲化铜及应用
CN111874876B (zh) * 2020-08-12 2022-02-22 湖北工业大学 一种生长碲化铜的方法、碲化铜及应用

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