CN110838529A - 用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 - Google Patents
用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 Download PDFInfo
- Publication number
- CN110838529A CN110838529A CN201810938146.9A CN201810938146A CN110838529A CN 110838529 A CN110838529 A CN 110838529A CN 201810938146 A CN201810938146 A CN 201810938146A CN 110838529 A CN110838529 A CN 110838529A
- Authority
- CN
- China
- Prior art keywords
- cavity
- film deposition
- pvd
- pecvd
- tco
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 62
- 230000008021 deposition Effects 0.000 claims abstract description 59
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 47
- 238000000427 thin-film deposition Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 6
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明涉及一种用于太阳电池制造的7腔体立式PECVD‑PVD一体化设备，真空预加热上料腔体、本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一、二、三TCO薄膜沉积PVD腔体和下料腔体通过真空锁依次连接且头尾设置真空锁，一移动装置由前至后穿接各腔体和真空锁，真空预加热上料腔体内设立式载板，立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态，第二TCO薄膜沉积PVD腔体内设溅射靶，上述各个腔体外接超纯气路、加热系、抽真空系统。能有效避免产品制备过程工序暴露于空气，提升晶体硅异质结太阳电池的性能，降低其生产成本。
Description
技术领域
本发明涉及高效晶体硅太阳电池制造领域，特别是一种用于太阳电池制造的7腔体立式PECVD-PVD一体化设备。
背景技术
目前，一类先进高效的晶体硅太阳电池是基于非晶硅/晶体硅异质结结构。其生产技术中非常关键的两个步骤是非晶硅基薄膜的沉积（包括本征层和掺杂层，材质为非晶硅、微晶硅、纳米硅、掺氧非晶硅等）以及透明导电氧化物TCO层的沉积。比较常用的非晶硅基薄膜的沉积方法是低温化学气相沉积法，包括等离子体化学气相沉积（PECVD）和热丝化学气相沉积（HECVD）两种；而TCO层的制备一般采用PVD法（磁控溅射法最常用）。在生产中，这两种技术所对应的设备通常是分开来的。即低温CVD设备是一套独立的系统，通常包括上料及预加热腔体、本征层沉积腔、掺杂沉积腔（p型或n型）以及下料腔体等几部分；而PVD设备也要包括上料腔、预加热腔、薄膜沉积腔以及下料腔体等。CVD与PVD系统之间还需要硅片的上料和下料装置以及硅片在不同设备间传递的传送装置等。整体体系非常复杂。而且因为在CVD与PVD系统之间传递过程中产品必须暴露于空气中，导致产品的表面受空气中水蒸气、氧气、灰尘等影响造成性能下降；生产中运营费用高，需要的工人数量也较多。
发明内容
本发明所解决的技术问题是提供一种能有效避免产品制备过程中本征和掺杂硅基薄膜以及TCO膜层工序暴露于空气，提升晶体硅异质结太阳电池的性能，降低其生产成本的用于太阳电池制造的7腔体立式PECVD-PVD一体化设备。
本发明所采用的技术方案是：一种用于太阳电池制造的7腔体立式PECVD-PVD一体化设备，其特征在于：包括真空预加热上料腔体、本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体，上述各腔体之间通过真空锁依次连接，真空预加热上料腔体进料口和下料腔体的出料口同样设置真空锁，一移动装置由前至后穿接各腔体和真空锁，本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构，真空预加热上料腔体内设立式载板，立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态，第二TCO薄膜沉积PVD腔体内设溅射靶，上述各个腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
所述移动装置为推料进给轨道或移动轨道或移动挂架。
所述下料腔体外接氮气或洁净空气系统。
采用立式结构的本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体，以及立式结构的三TCO薄膜沉积PVD腔体，将这两种薄膜沉积装备集成，各腔体之间采用真空锁结构连接，产品在设备各腔体之间通过移动装置传递时不暴露大气。
该设备在使用时，各个腔体在硅片未进入前均由其外接真空系统保持真空状态。将需进行镀膜的硅片固定到垂直放置的载板上；真空预加热上料腔体破真空，打开进料端真空锁，载板由移动装置送入真空预加热上料腔体中，然后关闭真空锁抽真空进行预加热，预加热可由腔体内或外接加热系统完成，达到预定的真空度和温度后，打开真空预加热上料腔体、本征非晶硅薄膜沉积PECVD腔体之间的真空锁；将载板送入本征非晶硅薄膜沉积PECVD腔体中关闭真空锁；在本征非晶硅薄膜沉积PECVD腔体中进行本征非晶硅薄膜层的沉积，沉积结束后抽除残余反应气体，达到所需真空度后打开本征非晶硅薄膜沉积PECVD腔体掺杂非晶硅薄膜沉积PECVD腔体之间的真空锁，将载板送入到掺杂非晶硅薄膜沉积PECVD腔体中关闭真空锁；在掺杂非晶硅薄膜沉积PECVD腔体中进行掺杂非晶硅薄膜层的沉积，沉积结束后抽除残余反应气体，达到所需真空度后打开该腔室后的真空锁，将载板送入到第一TCO薄膜沉积PVD腔体中关闭真空锁；在第一TCO薄膜沉积PVD腔体中，将温度调整到合适的温度，并准备开始TCO的沉积，第一TCO薄膜沉积PVD腔体起到了TCO沉积前的预加热以及调节PECVD部分和TCO沉积部分的作用；第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态，溅射靶安装在第二TCO薄膜沉积PVD腔体中，载板匀速的依次通三个腔体，完成TCO的镀膜过程；然后打开第三TCO薄膜沉积PVD腔体后的真空锁，载板被送入下料腔体后关闭真空锁；在下料腔体中用氮气或洁净空气破真空，然后打开下料腔体出料端的真空锁，将载板移出；关闭真空锁，对下料腔体抽真空。如此，则完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
本发明的有益效果是：非晶硅/晶体硅异质结太阳电池制造过程中在硅片的一个表面上沉积的本征非晶硅、掺杂非晶硅和TCO薄膜沉积全过程不暴露空气，减少了大气对硅片薄膜的氧化和空气中水蒸气、灰尘等对各结构表面的污染，从而提高了产品的性能。将PECVD与PVD进行一体化设计，通过移动装置由前至后依次传送，省却了PECVD设备的下料腔和PVD的上料腔，以及两台设备之间的传递装置和下上料装置，大大减少设备的复杂性，缩短了工序和工时，降低产线装备购买和运营的费用；减少了工序，从而减少了产品的搬运和与载盘之间对硅片的物理冲击，从而减少了产品的破片率，进一步降低了成本。
附图说明
图1为本发明的主视图。
其中：真空预加热上料腔体1；本征非晶硅薄膜沉积PECVD腔体2；掺杂非晶硅薄膜沉积PECVD腔体3；第一TCO薄膜沉积的PVD腔体4；第二TCO薄膜沉积的PVD腔体5；第三TCO薄膜沉积的PVD腔体6；下料腔体7；载板8；移动轨道9；真空锁10。
具体实施方式
下面结合具体实施例，进一步阐述本专利。应理解，这些实施例仅用于说明本专利而不用于限制本专利的范围。此外应理解，在阅读了本专利讲授的内容之后，本领域技术人员可以对本专利作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
图1所示：一种用于太阳电池制造的7腔体立式PECVD-PVD一体化设备包括真空预加热上料腔体1、本征非晶硅薄膜沉积PECVD腔体2、掺杂非晶硅薄膜沉积PECVD腔体3、第一TCO薄膜沉积的PVD腔体4、第二TCO薄膜沉积的PVD腔体5、第三TCO薄膜沉积的PVD腔体6、下料腔体7、载板8、移动轨道9、真空锁10。上述各PECVD、PVD腔体均为立式，真空预加热上料腔体1、本征非晶硅薄膜沉积PECVD腔体2、掺杂非晶硅薄膜沉积PECVD腔体3、第一TCO薄膜沉积的PVD腔体4、第二TCO薄膜沉积的PVD腔体5、第三TCO薄膜沉积的PVD腔体6、下料腔体7由前至后依次连接且两两间经真空锁10连接，预加热上料腔体1进料端和下料腔体7出料端也设置真空锁，真空预加热上料腔体1内设垂直的载板8，本一体化设备内设置有由前至后依次上料进给载板在各腔体内移动的移动轨道9，下料腔体7中用氮气或洁净空气破真空。
在本实施例中真空预加热上料腔体、各个PECVD、各个PVD腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统，依据现场生产综合选择。
Claims (3)
1.一种用于太阳电池制造的7腔体立式PECVD-PVD一体化设备，其特征在于：包括真空预加热上料腔体、本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体，上述各腔体之间通过真空锁依次连接，真空预加热上料腔体进料口和下料腔体的出料口同样设置真空锁，一移动装置由前至后穿接各腔体和真空锁，本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构，真空预加热上料腔体内设立式载板，立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态，第二TCO薄膜沉积PVD腔体内设溅射靶，下料腔体外接氮气或洁净空气系统。
2.根据权利要求1所述的用于太阳电池制造的7腔体立式PECVD-PVD一体化设备，其特征在于：所述移动装置为推料进给轨道或移动轨道或移动挂架。
3.根据权利要求1所述的用于太阳电池制造的7腔体立式PECVD-PVD一体化设备，其特征在于：本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810938146.9A CN110838529A (zh) | 2018-08-17 | 2018-08-17 | 用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810938146.9A CN110838529A (zh) | 2018-08-17 | 2018-08-17 | 用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110838529A true CN110838529A (zh) | 2020-02-25 |
Family
ID=69574223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810938146.9A Pending CN110838529A (zh) | 2018-08-17 | 2018-08-17 | 用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110838529A (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202626293U (zh) * | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池薄膜沉积系统 |
| CN103094403A (zh) * | 2011-10-28 | 2013-05-08 | 上海太阳能工程技术研究中心有限公司 | Pecvd法制备双面异质结太阳能电池的串行式设备和工艺 |
| CN103904155A (zh) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | 硅基异质结太阳能电池真空处理系统及电池制备方法 |
-
2018
- 2018-08-17 CN CN201810938146.9A patent/CN110838529A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094403A (zh) * | 2011-10-28 | 2013-05-08 | 上海太阳能工程技术研究中心有限公司 | Pecvd法制备双面异质结太阳能电池的串行式设备和工艺 |
| CN202626293U (zh) * | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池薄膜沉积系统 |
| CN103904155A (zh) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | 硅基异质结太阳能电池真空处理系统及电池制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130171757A1 (en) | Advanced platform for passivating crystalline silicon solar cells | |
| EP4191688A1 (en) | Coating apparatus, method and system, solar cell, module, and power generation system | |
| JP2002064215A (ja) | 光起電力モジュールの大量製造装置および方法 | |
| CN110835736A (zh) | 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
| US20160359071A1 (en) | System, method and apparatus for chemical vapor deposition | |
| CN110835739A (zh) | 7腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
| CN103370800A (zh) | 用于形成薄层板的方法和设备 | |
| CN110835744A (zh) | 一种9腔体卧式pecvd-pvd一体化硅片镀膜工艺 | |
| CN110835725A (zh) | 用于太阳电池制造的7腔体卧式hwcvd-pvd一体化设备 | |
| CN110835726A (zh) | 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备 | |
| CN110835730A (zh) | 7腔体立式hwcvd-pvd一体化硅片镀膜生产工艺 | |
| CN110835734A (zh) | 一种8腔体卧式pecvd-pvd一体化硅片镀膜工艺 | |
| CN110835731A (zh) | 一种8腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
| CN110835735A (zh) | 一种8腔体卧式hwcvd-pvd一体化硅片镀膜工艺 | |
| CN110835732A (zh) | 一种9腔体卧式hwcvd-pvd一体化硅片镀膜工艺 | |
| CN107623052B (zh) | 一种太阳能电池片钝化用Al2O3镀膜系统和方法 | |
| CN110838529A (zh) | 用于太阳电池制造的7腔体立式pecvd-pvd一体化设备 | |
| US20110263065A1 (en) | Modular system for high-rate deposition of thin film layers on photovoltaic module substrates | |
| CN110838530A (zh) | 用于太阳电池制造的7腔体卧式pecvd-pvd一体化设备 | |
| EP2381010B1 (en) | Methods for high-rate sputtering of a compound semiconductor on large area substrates | |
| CN110835737A (zh) | 一种7腔体卧式pecvd-pvd一体化硅片镀膜工艺 | |
| CN110838531A (zh) | 用于太阳电池制造的8腔体立式pecvd-pvd一体化设备 | |
| AU2011201788A1 (en) | System and methods for high-rate co-sputtering of thin film layers on photovoltaic module substrates | |
| CN110835745A (zh) | 用于太阳电池制造的8腔体卧式hwcvd-pvd一体化设备 | |
| CN110835727A (zh) | 用于太阳电池制造的8腔体卧式pecvd-pvd一体化设备 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200225 |