CN110838519A - 柔性ZnO/NiO/ZnO多功能三极管及其制备方法 - Google Patents

柔性ZnO/NiO/ZnO多功能三极管及其制备方法 Download PDF

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CN110838519A
CN110838519A CN201910977844.4A CN201910977844A CN110838519A CN 110838519 A CN110838519 A CN 110838519A CN 201910977844 A CN201910977844 A CN 201910977844A CN 110838519 A CN110838519 A CN 110838519A
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徐旻轩
李馨
金成超
何志伟
张骐
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Hangzhou Electronic Science and Technology University
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Abstract

本发明公开了一种柔性ZnO/NiO/ZnO多功能三极管，该结构为从上到下依次为发射极、基极、集电极、柔性导电衬底；所述的柔性导电衬底为柔性衬底上设有导电层；所述的发射极材料为ZnO，所述的基极材料为NiO，所述的集电材料为ZnO，所述的发射极、基极、集电极的一侧对齐，所述的发射极和柔性衬底的导电层上设有电极。本发明通过压电效应与半导体能带工程的耦合作用实现该晶体管在光电探测，力电传感以及纳米发电等多种功能化应用。

Description

柔性ZnO/NiO/ZnO多功能三极管及其制备方法
技术领域
本发明涉及一种三极管，具体涉及一种柔性ZnO/NiO/ZnO多功能三极管及其制备方法。
背景技术
三极管体积小、重量轻、耗电少、寿命长、可靠性高，已广泛用于广播、电视、通信、雷达、计算机、家用电器等领域，可起到放大、振荡、开关等作用。特别在超高频应用中，如无线系统中的射频电路。
一直以来三极管的研究都备受关注，其研究工作主要侧重第一代和第二代半导体材料。硅(Si)作为第一代半导体材料的典型代表，以其优越的电子特性及热稳定性，被广泛用于电子元器件的制备，目前市场上的三极管以Si基为主。砷化铟(InAs)和砷化镓(GaAs)等第二代半导体材料拥有较Si更优异的电子特性，如高频特性，高击穿电压等，但其制作的三极管放大倍数小，导热性差，并不适宜制作大功率器件。因此基于第三代半导体材料的三极管开发逐渐成为热门。
氧化锌(ZnO)作为典型的第三代半导体材料，制备工艺成熟，成膜性强且易于找到晶格匹配的衬底材料。这些特点可大大降低制备薄膜晶体管的成本，并有利于提高薄膜质量。另外，ZnO为n型宽禁带材料，可与许多P型薄膜接触形成异质结，利于载流子的运输并抑制空穴从基极到发射极的注入，提高发射效率，增加电流增益，以上优势使ZnO成为制作高性能三极管的潜力材料。但目前关于ZnO基三极管的报道极少，且止步于三极管的基础性能研究，而对其他功能毫无关注，这使得ZnO基三极管在未来智能电子市场中表现出较弱的竞争优势，因此急需开发一种基于ZnO异质结的薄膜晶体管，并积极开发其各项功能的应用。
发明内容
本发明针对现有技术的不足，提出了一种柔性ZnO/NiO/ZnO多功能三极管及其制备方法。
本发明一种三极管为磁控溅射制备的ZnO/NiO/ZnO平面结构。设计思路以n型半导体ZnO作为集电极(C)和发射极(E)，以p型半导体NiO为基极(B)，在导电PET柔性衬底上构筑该npn型薄膜三极管，其中双层ZnO层与中间NiO层构成2个pn结区，结区载流子输运行为可被光照、应变等外场调控，从而实现光电探测、力电传感甚至纳米发电等功能。
本发明一种柔性ZnO/NiO/ZnO多功能三极管，该结构为从上到下依次为发射极、基极、集电极、柔性导电衬底；所述的柔性导电衬底为柔性衬底上设有导电层；所述的发射极材料为ZnO，所述的基极材料为NiO，所述的集电材料为ZnO，所述的发射极、基极、集电极的一侧对齐，所述的发射极和柔性衬底的导电层上设有电极。
作为优选，所述集电极为20mm×10mm×320nm大小的薄膜，采用导电PET为基底通过磁控溅射法进行制备。
作为优选，所基极为20mm×10mm×80nm大小的薄膜，在集电极上直接磁控溅射进行制备。
作为优选，所述发射极层为5mm×10mm×320nm大小的薄膜，在基极上直接磁控溅射进行制备。
作为优选，所述的导电层为ITO涂层。
作为优选，所述的柔性衬底为PET片。
作为优选，所述电极材料为银、铂或金。
柔性ZnO/NiO/ZnO多功能三极管的制备方法，该方法具体包括以下步骤：
步骤一：柔性衬底在丙酮、酒精、去离子水中各超声10分钟，然后用N2吹干备用；
步骤二：采用磁控溅射法在柔性衬底上直接制备导电层；
步骤三：通过PI胶带遮盖部分导电层，通过磁控溅射在导电层上制备n型ZnO薄膜作为集电极；
步骤四：在集电极表面直接磁控溅射制备p型NiO薄膜作为基极；
步骤五：通过PI胶带遮盖部分基极，采用与集电极相同的参数进行磁控溅射制备n型ZnO薄膜作为发射极；
步骤六：撕去两层PI胶带，裸露出部分导电层和基极，将两个电极分别设置在发射极和柔性衬底的导电层上。
本发明的有益效果在于：本发明提供了一种柔性多功能的薄膜三极管及其制备方法，以压电材料ZnO为n型薄膜，NiO为p型薄膜，构筑npn型的柔性三极管。通过压电效应与半导体能带工程的耦合作用实现该晶体管在光电探测，力电传感以及纳米发电等多种功能化应用。
附图说明
图1为本发明基于ZnO/NiO/ZnO双异质结结构的柔性多功能三极管示意图；
图2为本发明一个实施例中柔性多功能三极管对紫外光的探测结果图；
图3为本发明实施例中柔性多功能三极管对应变的传感结果图；
图4为本发明实施例中柔性多功能三极管作为纳米发电机的电流输出图。
具体实施方式
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1，本发明提供一种柔性多功能薄膜三极管的设计方案,包含：柔性衬底1，所述柔性衬底为绝缘的长方形PET薄片，分别在丙酮、酒精、去离子水中各超声10分钟，然后用N2吹干备用；导电层2，所述导电层为ITO涂层，高度透明，采用磁控溅射法在柔性衬底上直接制备；集电极3，所述集电极为n型ZnO薄膜，以带有导电层的柔性衬底为基底，通过磁控溅射进行制备，制备前需用PI胶带遮盖部分导电层；基极4，所述基极为p型NiO薄膜，制备工艺为在集电极表面直接磁控溅射；发射极5，所述发射级为n型ZnO薄膜，采用与集电极相同的参数进行磁控溅射，溅射前需用PI胶带遮盖大部分基极表面；金属电极6，所述金属电极为Ag电极，各层薄膜溅射完毕后撕去两层PI胶带，裸露出部分导电层和基极，通过银胶将外接导线分别固定于导电层、基极和发射极。
参见图2，所述柔性多功能薄膜三极管对紫外光具有明显的响应特性。采用紫外光波长为254nm，照射中心为裸露的基极表面，照射区域及距离固定，光强密度为20μW/cm2。当发射极-集电极电压恒为1V时，发射极-集电极电流初始值为42nA，经紫外光照后，电流升至56nA，且在关闭光照后迅速回落至初始电流附近。该三极管的光电探测原理为紫外光照到NiO基区上时，会有电子-空穴对在两个pn结区附近产生，这些电子-空穴对在pn结的内建电场下快速向两端分离。后在基区漂移场作用下空穴向发射区流动聚集，电子进入集电区。由于三极管中以电子为主流载流子，且流动方向为发射极-集电极，根据其能带图发现三极管中电子的输运行为主要受到发射极-基极结区的调控。而在发射区聚集的空穴会使ZnO发射极的导带和价带升高，从而导致发射极-基极结区的势垒高度降低，这会促进ZnO发射极层电子到NiO基极层的运输，即导致了三极管中电流信号的放大。
参见图3，所述柔性多功能薄膜三极管对应变信号具有明显的响应特性。当发射极-集电极加载正向扫描电压至8V时，发射极-集电极电流随三极管水平拉伸而降低，水平压缩而增大；且应变量越大，电流变化幅度越明显。该三极管的力电传感是基于n型ZnO发射极层的压电效应对发射极-基极结区势垒高度的调控规律。当三极管施加水平方向拉伸应变时，ZnO发射极层受到垂直方向的压应力，应力方向与ZnO的C轴方向相反，即发射极的下表面聚集了大量负电荷，发射极-基极结区的势垒高度被提升，抑制了ZnO发射极层电子到NiO基极层的运输；而当三极管施加反向应变时，ZnO发射极层实际受到垂直方向的拉应力，在其下表面产生正电荷，降低了发射极-基极结区的势垒高度，从而提高了ZnO发射极层电子到NiO基极层的运输。
参见图4，所述柔性多功能薄膜三极管可实现纳米发电功能。当无外加偏压时，反复弯曲三极管可得到约4nA的输出电流，该电流是由n型ZnO发射极层和集电极层的压电效应引起。三极管弯曲形变时，ZnO薄膜的上、下表面分别诱发聚集正、负电荷，即三极管内产生了压电电场，外部电子在该压电电场的驱动下流动，宏观表现为可测量的电流信号。

Claims (8)

1.柔性ZnO/NiO/ZnO多功能三极管，其特征在于：该结构为从上到下依次为发射极、基极、集电极、柔性导电衬底；所述的柔性导电衬底为柔性衬底上设有导电层；所述的发射极材料为ZnO，所述的基极材料为NiO，所述的集电材料为ZnO，所述的发射极、基极、集电极的一侧对齐，所述的发射极和柔性衬底的导电层上设有电极。
2.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所述集电极为20mm×10mm×320nm大小的薄膜，采用导电PET为基底通过磁控溅射法进行制备。
3.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所基极为20mm×10mm×80nm大小的薄膜，在集电极上直接磁控溅射进行制备。
4.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所述发射极层为5mm×10mm×320nm大小的薄膜，在基极上直接磁控溅射进行制备。
5.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所述的导电层为ITO涂层。
6.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所述的柔性衬底为PET片。
7.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管，其特征在于：所述电极材料为银、铂或金。
8.根据权利要求1所述的柔性ZnO/NiO/ZnO多功能三极管的制备方法，其特征在于，该方法具体包括以下步骤：
步骤一：柔性衬底在丙酮、酒精、去离子水中各超声10分钟，然后用N2吹干备用；
步骤二：采用磁控溅射法在柔性衬底上直接制备导电层；
步骤三：通过PI胶带遮盖部分导电层，通过磁控溅射在导电层上制备n型ZnO薄膜作为集电极；
步骤四：在集电极表面直接磁控溅射制备p型NiO薄膜作为基极；
步骤五：通过PI胶带遮盖部分基极，采用与集电极相同的参数进行磁控溅射制备n型ZnO薄膜作为发射极；
步骤六：撕去两层PI胶带，裸露出部分导电层和基极，将两个电极分别设置在发射极和柔性衬底的导电层上。
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