CN110828955A - E-plane-to-H-plane waveguide probe transition structure - Google Patents
E-plane-to-H-plane waveguide probe transition structure Download PDFInfo
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- CN110828955A CN110828955A CN201911024944.1A CN201911024944A CN110828955A CN 110828955 A CN110828955 A CN 110828955A CN 201911024944 A CN201911024944 A CN 201911024944A CN 110828955 A CN110828955 A CN 110828955A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
- H01P5/103—Hollow-waveguide/coaxial-line transitions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/165—Auxiliary devices for rotating the plane of polarisation
Abstract
The invention relates to a transition structure of an E-plane-to-H-plane waveguide probe, belonging to the field of millimeter wave frequency band communication system design; the device comprises an E-surface waveguide, a first transition waveguide, an H-surface waveguide, a second transition waveguide, a probe and a poking bead; wherein the first transition waveguide is horizontally arranged; the E-surface waveguide 1 is horizontally arranged at the center of one end side of the first transition waveguide; the H-plane waveguide is vertically arranged in the center of the side face at the other end of the first transition waveguide; the second transition waveguide is in butt joint with the output end of the H-plane waveguide; the probe is arranged on the outer side wall of the second transition waveguide; and the probe axially extends into the side wall of the second transition waveguide; the poking bead is sleeved on the outer wall of the probe extending out of the second transition waveguide end; the invention realizes the mutual conversion of the E surface and the H surface and simultaneously completes the transition design from the turning waveguide and the waveguide to the coaxial probe.
Description
Technical Field
The invention belongs to the field of millimeter wave frequency band communication system design, and relates to an E-plane-to-H-plane waveguide probe transition structure.
Background
With the wide application of wireless communication systems and radar systems in millimeter wave frequency bands, waveguide structures are increasingly favored by designers due to their high sealing and stable transmission performance. In practical application, an E-plane waveguide and an H-plane waveguide are often required to be used in a conversion manner, and the most commonly used transition structure from the E-plane waveguide to the H-plane waveguide is a twisted waveguide, but the twisted waveguide has a long length and an excessively large volume, which is not beneficial to system integration.
The traditional E-plane to H-plane conversion structure is large in size and difficult to process, and the microstrip line at the ka frequency band high end is large in insertion loss and poor in stability.
Disclosure of Invention
The technical problem solved by the invention is as follows: the defects of the prior art are overcome, the transition structure of the E-surface-to-H-surface waveguide probe is provided, the interconversion of the E surface and the H surface is realized, and the transition design from the turning waveguide and the waveguide to the coaxial probe is completed.
The technical scheme of the invention is as follows:
a transition structure of an E-surface-to-H-surface waveguide probe comprises an E-surface waveguide, a first transition waveguide, an H-surface waveguide, a second transition waveguide, a probe and a shifting bead; wherein the first transition waveguide is horizontally arranged; the E-surface waveguide is horizontally arranged at the center of one end side face of the first transition waveguide; the H-plane waveguide is vertically arranged in the center of the side face at the other end of the first transition waveguide; the second transition waveguide is in butt joint with the output end of the H-plane waveguide; the probe is arranged on the outer side wall of the second transition waveguide; and the probe axially extends into the side wall of the second transition waveguide; the bead is sleeved on the outer wall of the end, extending out of the second transition waveguide, of the probe.
In the transition structure of the waveguide probe with the E surface converted into the H surface, the waveguide with the E surface is of a cuboid structure; the butt joint surface of the E-surface waveguide and the first transition waveguide is a horizontal rectangular surface; the size of the horizontal rectangular surface is 5.7mm multiplied by 2.85 mm; the E-plane waveguide is a ka-frequency waveguide.
In the transition structure of the waveguide probe with the E surface converted into the H surface, the H surface waveguide is of a cuboid structure; the butt joint surface of the H-face waveguide and the first transition waveguide is a vertical rectangular surface; the size of the vertical rectangular surface is 5mm multiplied by 2 mm; the H-plane waveguide is a ka-frequency waveguide.
In the above transition structure of the E-plane to H-plane waveguide probe, the manufacturing method of the first transition waveguide comprises:
s1, establishing a first transition waveguide blank;
s2, cutting off 2 cuboid shells on the axial end face of the first transition waveguide blank body along the axial direction;
s3, cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the E-surface waveguide on the butt joint end surface of the first transition waveguide blank and the E-surface waveguide; the end face of the first transition waveguide blank body, which is butted with the H-face waveguide, is provided; cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the H-plane waveguide; the first transition waveguide is shaped.
In the transition structure of the waveguide probe with the surface E converted into the surface H, in S1, the first transition waveguide blank is a hollow rectangular structure formed by thin walls; the first transition waveguide blank body is axially and horizontally arranged; the axial length L1 of the first transition waveguide body is 5.1 mm; and both axial end faces of the first transition waveguide blank are of a square structure with the side length L2 of 7.8 mm.
In the transition structure of the waveguide probe with the surface E converted into the surface H, in S2, 2 rectangular solid shells are respectively located at a group of opposite angles of the axial end surface of the first transition waveguide blank; the axial length of the cuboid shell is the same as that of L1; the axial end face of the cuboid shell is of a square structure; the length L3 of the axial end face of the rectangular parallelepiped shell is 2.9 mm.
In the transition structure of the waveguide probe with the E surface converted into the H surface, the second transition waveguide is a hollow U-shaped thin-wall structure; the outer side wall of one side of the opening end of the U-shaped second transition waveguide is butted with the H-surface waveguide; the probe is axially and horizontally fixedly arranged on the outer side wall of the other side of the open end of the U-shaped second transition waveguide.
In the transition structure of the probe with the E-plane-to-H-plane waveguide, a fillet structure r1 is arranged at the joint of the second transition waveguide and the H-plane waveguide; two corners of the closed end of the U-shaped second transition waveguide are provided with rounded corner structures r2 and r 3; the radius of the fillet structure is 2.15 mm.
In the transition structure of the waveguide probe with the E surface converted into the H surface, the diameter of the probe is 0.3 mm; the length L4 of the probe axially extending into the inner wall of the second transition waveguide is 1.5 mm; the distance L5 between the axial direction of the probe and the top end of the second transition waveguide is 1.24 mm; the shifting beads are of hollow cylinder structures; an air cavity is arranged at the center of the shifting bead; the diameter of the air cavity is 0.64 mm; the probe extends axially outward into the air chamber.
In the transition structure of the waveguide probe with the E surface converted into the H surface, the first transition waveguide and the second transition waveguide are made of aluminum plate materials; the surface treatment adopts an Al/ap. Ni2-4 Ep. Au1-2 process.
Compared with the prior art, the invention has the beneficial effects that:
(1) the probe transition structure provided by the invention has good transmission performance at the high end of the ka frequency band, the insertion loss is not more than 0.2dB in the frequency range of 34GHz-40GHz, the return loss is not more than-15 dB, the insertion loss value is greatly reduced, and the application range is wider;
(2) the invention has compact and practical structure, can be applied to various transition occasions and is beneficial to realizing the miniaturization of the whole structure;
(3) the invention has simple structure, convenient processing and manufacturing and reduces the manufacturing cost;
(4) the invention reduces the system loss and makes the design more flexible.
Drawings
FIG. 1 is a schematic overall view of a transition probe according to the present invention;
FIG. 2 is a schematic view of a first transition waveguide structure according to the present invention;
fig. 3 is a schematic view of a second transition waveguide of the present invention.
Detailed Description
The invention is further illustrated by the following examples.
The invention overcomes the defects of large volume, difficult processing, large insertion loss, poor stability and the like of a high-end microstrip line at the ka frequency band in the traditional conversion from the E surface to the H surface, provides a novel transition structure of the corner-cut square waveguide, integrates the design from the H surface waveguide 3 to the coaxial probe 5, and finally realizes the compact waveguide probe transition structure. In the method, an E-surface waveguide 1 and an H-surface waveguide 3 are connected through a square first transition waveguide 2, a group of opposite angles of the first transition waveguide 2 are respectively dug to form a square step, the polarization direction of an electric field is converted from the E-surface waveguide 1 to the first transition waveguide 2 by 45 degrees, and the first transition waveguide 2 is converted from the H-surface waveguide 3 by 45 degrees, so that the polarization direction of the E-surface waveguide 1 is converted from the H-surface waveguide 3 by 90 degrees; the H-plane waveguide 3 is transited to the coaxial probe 5, and the broadband application is realized by adopting an air cavity 61 matching structure.
As shown in fig. 1, the transition structure of the probe with the E-plane to H-plane waveguide mainly includes an E-plane waveguide 1, a first transition waveguide 2, an H-plane waveguide 3, a second transition waveguide 4, a probe 5 and a bead 6; wherein the first transition waveguide 2 is horizontally disposed; the E-surface waveguide 1 is horizontally arranged at the center of one end side of the first transition waveguide 2; the H-plane waveguide 3 is vertically arranged in the center of the side face at the other end of the first transition waveguide 2; the second transition waveguide 4 is in butt joint with the output end of the H-plane waveguide 3; the probe 5 is arranged on the outer side wall of the second transition waveguide 4; and the probe 5 axially extends into the side wall of the second transition waveguide 4; the shifting bead 6 is sleeved on the outer wall of the end, extending out of the second transition waveguide 4, of the probe 5. Wherein, the E-surface waveguide 1 is a cuboid structure; the butt joint surface of the E-surface waveguide 1 and the first transition waveguide 2 is a horizontal rectangular surface; the size of the horizontal rectangular surface is 5.7mm multiplied by 2.85 mm; the E-plane waveguide 1 is a ka-frequency waveguide. The H-plane waveguide 3 is of a cuboid structure; the butt joint surface of the H-surface waveguide 3 and the first transition waveguide 2 is a vertical rectangular surface; the size of the vertical rectangular surface is 5mm multiplied by 2 mm; the H-plane waveguide 3 is a ka-frequency waveguide. The first transition waveguide 2 and the second transition waveguide 4 are made of aluminum plate materials; the surface treatment adopts an Al/ap. Ni2-4 Ep. Au1-2 process.
The manufacturing method of the first transition waveguide 2 comprises the following steps:
s1, establishing a first transition waveguide blank; the first transition waveguide blank body is of a hollow cuboid structure consisting of thin walls; the first transition waveguide blank body is axially and horizontally arranged; the axial length L1 of the first transition waveguide body is 5.1 mm; and both axial end faces of the first transition waveguide blank are of a square structure with the side length L2 of 7.8 mm.
S2, cutting off 2 cuboid shells on the axial end face of the first transition waveguide blank body along the axial direction; the 2 cuboid shells are respectively positioned at a group of opposite angles of the axial end face of the first transition waveguide blank; the axial length of the cuboid shell is the same as that of L1; the axial end face of the cuboid shell is of a square structure; the length L3 of the axial end face of the rectangular parallelepiped shell is 2.9 mm.
S3, cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the E-surface waveguide 1 on the butt joint end surface of the first transition waveguide blank and the E-surface waveguide 1; the end face of the first transition waveguide blank body, which is butted with the H-face waveguide 3; cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the H-plane waveguide 3; the first transition waveguide 2 is shaped and finally shaped as shown in FIG. 2
As shown in fig. 3, the second transition waveguide 4 is a hollow U-shaped thin-walled structure; the outer side wall of one side of the opening end of the U-shaped second transition waveguide 4 is butted with the H-surface waveguide 3; the probe 5 is axially and horizontally fixedly arranged on the outer side wall of the other side of the opening end of the U-shaped second transition waveguide 4. A fillet structure r1 is arranged at the joint of the second transition waveguide 4 and the H-plane waveguide 3; two corners of the closed end of the U-shaped second transition waveguide 4 are provided with rounded corner structures r2 and r 3; the radius of the fillet structure is 2.15 mm.
The diameter of the probe 5 is 0.3 mm; the length L4 of the probe 5 axially extending into the inner wall of the second transition waveguide 4 is 1.5 mm; the distance L5 between the probe 5 and the top end of the second transition waveguide 4 in the axial direction is 1.24 mm; the shifting beads 6 are of hollow cylinder structures; an air cavity 61 is arranged at the center of the bead 6; the diameter of the air cavity 61 is 0.64 mm; the axially outer end of the probe 5 projects into the air chamber 61.
The transition structure designed by the invention is tested, and the test result shows that the insertion loss is not more than 0.2dB and the return loss is better than 15dB in a frequency band of 34GHz-40GHz, so that the insertion loss is greatly reduced, and the transition structure has the characteristic of broadband.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (10)
1. The utility model provides a E face changes H face waveguide probe transition structure which characterized in that: the device comprises an E-surface waveguide (1), a first transition waveguide (2), an H-surface waveguide (3), a second transition waveguide (4), a probe (5) and a shifting bead (6); wherein the first transition waveguide (2) is horizontally arranged; the E-surface waveguide (1) is horizontally arranged at the center of one end side of the first transition waveguide (2); the H-face waveguide (3) is vertically arranged at the center of the side face at the other end of the first transition waveguide (2); the second transition waveguide (4) is in butt joint with the output end of the H-face waveguide (3); the probe (5) is arranged on the outer side wall of the second transition waveguide (4); and the probe (5) axially extends into the side wall of the second transition waveguide (4); the shifting bead (6) is sleeved on the outer wall of the end, extending out of the second transition waveguide (4), of the probe (5).
2. The transition structure of the E-plane to H-plane waveguide probe according to claim 1, wherein: the E-surface waveguide (1) is of a cuboid structure; the butt joint surface of the E-surface waveguide (1) and the first transition waveguide (2) is a horizontal rectangular surface; the size of the horizontal rectangular surface is 5.7mm multiplied by 2.85 mm; the E-plane waveguide (1) is a ka-frequency waveguide.
3. The transition structure of the E-plane to H-plane waveguide probe according to claim 2, wherein: the H-face waveguide (3) is of a cuboid structure; the butt joint surface of the H-face waveguide (3) and the first transition waveguide (2) is a vertical rectangular surface; the size of the vertical rectangular surface is 5mm multiplied by 2 mm; the H-plane waveguide (3) is a ka-frequency waveguide.
4. The transition structure of the E-plane to H-plane waveguide probe according to claim 3, wherein: the manufacturing method of the first transition waveguide (2) comprises the following steps:
s1, establishing a first transition waveguide blank;
s2, cutting off 2 cuboid shells on the axial end face of the first transition waveguide blank body along the axial direction;
s3, cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the E-surface waveguide (1) on the butt joint end surface of the first transition waveguide blank and the E-surface waveguide (1); the end face of the first transition waveguide blank body, which is butted with the H-face waveguide (3), is provided; cutting off the shell of the first transition waveguide blank according to the size of the butt joint surface of the H-surface waveguide (3); the first transition waveguide (2) is shaped.
5. The transition structure of the E-plane to H-plane waveguide probe according to claim 4, wherein: in the step S1, the first transition waveguide blank is a hollow rectangular parallelepiped structure composed of thin walls; the first transition waveguide blank body is axially and horizontally arranged; the axial length L1 of the first transition waveguide body is 5.1 mm; and both axial end faces of the first transition waveguide blank are of a square structure with the side length L2 of 7.8 mm.
6. The transition structure of the E-plane to H-plane waveguide probe according to claim 5, wherein: in the step S2, 2 cuboid shells are respectively positioned at a group of opposite angles of the axial end face of the first transition waveguide blank; the axial length of the cuboid shell is the same as that of L1; the axial end face of the cuboid shell is of a square structure; the length L3 of the axial end face of the rectangular parallelepiped shell is 2.9 mm.
7. The transition structure of the E-plane to H-plane waveguide probe according to claim 6, wherein: the second transition waveguide (4) is of a hollow U-shaped thin-wall structure; the outer side wall of one side of the opening end of the U-shaped second transition waveguide (4) is butted with the H-surface waveguide (3); the probe (5) is axially and horizontally fixedly arranged on the outer side wall of the other side of the opening end of the U-shaped second transition waveguide (4).
8. The transition structure of the E-plane to H-plane waveguide probe according to claim 7, wherein: a fillet structure r1 is arranged at the joint of the second transition waveguide (4) and the H-face waveguide (3); two corners of the closed end of the U-shaped second transition waveguide (4) are provided with rounded corner structures r2 and r 3; the radius of the fillet structure is 2.15 mm.
9. The transition structure of the E-plane to H-plane waveguide probe according to claim 8, wherein: the diameter of the probe (5) is 0.3 mm; the length L4 of the probe (5) axially extending into the inner wall of the second transition waveguide (4) is 1.5 mm; the distance L5 between the probe (5) and the top end of the second transition waveguide (4) in the axial direction is 1.24 mm; the shifting beads (6) are of hollow cylinder structures; an air cavity (61) is arranged at the center of the shifting bead (6); the diameter of the air cavity (61) is 0.64 mm; the axial outer end of the probe (5) extends into the air cavity (61).
10. The transition structure of an E-plane to H-plane waveguide probe of claim 9, wherein: the first transition waveguide (2) and the second transition waveguide (4) are made of aluminum plate materials; the surface treatment adopts an Al/ap. Ni2-4 Ep. Au1-2 process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911024944.1A CN110828955A (en) | 2019-10-25 | 2019-10-25 | E-plane-to-H-plane waveguide probe transition structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911024944.1A CN110828955A (en) | 2019-10-25 | 2019-10-25 | E-plane-to-H-plane waveguide probe transition structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150214A (en) * | 2006-09-19 | 2008-03-26 | 日本电气株式会社 | Polarization transformation |
| EP2750244A1 (en) * | 2012-12-25 | 2014-07-02 | Wistron Neweb Corporation | Diplexer and waveguide |
| CN105633516A (en) * | 2016-02-23 | 2016-06-01 | 陕西天翌天线有限公司 | Conversion device for waveguide polarization direction |
| CN206134903U (en) * | 2016-11-09 | 2017-04-26 | 迈特通信设备（苏州）有限公司 | E H changes waveguide device |
| CN108134171A (en) * | 2017-12-20 | 2018-06-08 | 北京遥感设备研究所 | A kind of Ku band broadband Waveguide-microbelt converters of coaxial probe transition type |
| US20190198963A1 (en) * | 2017-12-21 | 2019-06-27 | Zte Corporation | Rf waveguide twist |
-
2019
- 2019-10-25 CN CN201911024944.1A patent/CN110828955A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150214A (en) * | 2006-09-19 | 2008-03-26 | 日本电气株式会社 | Polarization transformation |
| EP2750244A1 (en) * | 2012-12-25 | 2014-07-02 | Wistron Neweb Corporation | Diplexer and waveguide |
| CN105633516A (en) * | 2016-02-23 | 2016-06-01 | 陕西天翌天线有限公司 | Conversion device for waveguide polarization direction |
| CN206134903U (en) * | 2016-11-09 | 2017-04-26 | 迈特通信设备（苏州）有限公司 | E H changes waveguide device |
| CN108134171A (en) * | 2017-12-20 | 2018-06-08 | 北京遥感设备研究所 | A kind of Ku band broadband Waveguide-microbelt converters of coaxial probe transition type |
| US20190198963A1 (en) * | 2017-12-21 | 2019-06-27 | Zte Corporation | Rf waveguide twist |
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Application publication date: 20200221 |