CN110828342A - Baking device and substrate baking method - Google Patents
Baking device and substrate baking method Download PDFInfo
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- CN110828342A CN110828342A CN201911020593.7A CN201911020593A CN110828342A CN 110828342 A CN110828342 A CN 110828342A CN 201911020593 A CN201911020593 A CN 201911020593A CN 110828342 A CN110828342 A CN 110828342A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a baking device and a substrate baking method, wherein the baking device comprises a baking platform, a substrate loading device and a substrate baking device, wherein the baking platform is used for loading a substrate and heating and baking the substrate; the device further comprises: the invention also discloses a substrate baking method, which comprises the following steps of: loading the substrate onto a baking platform of a baking device; heating the substrate by using the baking platform; venting a substrate through the hollow structure of the lift pin; moving a lifting pin upwards to lift the substrate; and unloading the substrate. By using the baking device and the substrate baking method provided by the invention to bake the substrate, the risk of fragment of the substrate in the lifting and unloading process can be reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a baking device and a substrate baking method.
Background
After the baking device has baked the substrate for a period of time, the upper surface of the baking platform (Bake Plate) of the baking device will generate local mirror surface due to the friction with the substrate deformed by bending. When the substrate is lifted by the Lift Pin (Lift Pin), the mirror-like adhesion phenomenon of the substrate caused by the large adhesion force between the substrate and the upper surface of the mirror-like baking platform occurs, and the mirror-like adhesion phenomenon further generates static electricity (ESD for short) and the risk of breaking. Particularly, as the thickness of the substrate is thinner and the generation line is larger, the phenomenon becomes more obvious.
Disclosure of Invention
The invention provides a baking device and a substrate baking method, aiming at solving the problems that when a substrate is lifted by a lifting pin, a mirrorized sticking phenomenon is generated due to large adhesive force between the substrate and the upper surface of a baking platform, and the mirrorized sticking phenomenon can cause electrostatic discharge (ESD) and fragment risks.
The utility model provides a baking equipment, includes toasts the platform for load the base plate, and to the base plate heats and toasts, toast the area that the platform loaded the base plate and seted up at least one through-hole, the device still includes:
the lifting pin is used for lifting the substrate, is arranged below the baking platform and extends into the through hole of the baking platform, and is of a hollow structure which is a gas circulation channel and used for ventilating the substrate.
Above-mentioned baking equipment possesses for hollow structure's lifting pin, extends to toast the platform through-hole and can ventilate to the base plate, can weaken base plate and the surperficial power of cohering of toasting of mirrorization, and the help base plate is from toasting the platform separation, can reduce the mirrorization and paste the electrostatic discharge and the rupture risk that piece phenomenon leads to when promoting the base plate and mirrorization.
A method of baking a substrate, the method comprising:
loading a substrate onto a baking platform of a baking device, wherein at least one through hole is formed in the substrate loading area of the baking platform, the baking device further comprises a lifting pin which is used for lifting the substrate and is of a hollow structure, and the lifting pin is arranged below the baking platform and extends into the through hole of the baking platform;
heating the substrate by using the baking platform;
ventilating the substrate through the hollow structure of the lifting pin to separate the substrate from the baking platform;
moving a lifting pin upwards to lift the substrate;
and unloading the substrate.
According to the substrate baking method, after the baking platform is used for heating the substrate, the lifting pin with the hollow structure is used for ventilating the substrate, so that the adhesive force between the substrate and the surface of the mirrorized baking platform can be weakened, the substrate and the baking platform can be separated, and the mirrorized sticking phenomenon and the electrostatic discharge and fragment risks caused by the mirrorized sticking phenomenon can be reduced when the substrate is lifted.
Drawings
FIG. 1 is a schematic diagram of a lift pin of the toasting apparatus according to an embodiment;
FIG. 2 is a schematic view of a lift pin of the toasting apparatus according to another embodiment;
FIG. 3 is a schematic structural diagram of a baking apparatus according to an embodiment;
FIG. 4 is a schematic structural view of a baking apparatus in another embodiment;
FIG. 5 is a flowchart illustrating a method for baking a substrate according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a lifting pin of a baking device, which can be applied to semiconductor equipment needing a baking process, such as glue spreading and developing equipment. The baking device comprises a baking platform used for loading and baking the substrate, and at least one through hole is formed in the substrate loading area of the baking platform. The substrate may be, but is not limited to, a glass sheet. As shown in fig. 1 and 3, the lift pin 10 is a hollow structure, the hollow structure is a gas flow channel, and the lift pin 10 is used for extending into the through hole to ventilate the substrate 15 and for lifting the substrate 15. The cross-sectional dimension of the lift pin 10 may be smaller than the cross-sectional dimension of the through-hole to allow the lift pin 10 to extend into the through-hole and also facilitate the lift pin 10 lifting the substrate 15. The cross-sectional dimension of the hollow structure at the head of the lift pin 10 can be smaller than the dimensions of the hollow structures at other parts of the lift pin 10, so that the introduced gas firstly passes through the hollow structure with large dimension and then is sprayed out from the hollow structure with small dimension, and the acting force of the gas is larger, which is beneficial to weakening the bonding force between the substrate 15 and the baking platform 14.
As shown in fig. 2 and 3, the lift pin 10 may further include a pipe 11 for introducing gas, and the pipe 11 extends into the hollow structure of the lift pin 10 and may further extend to the head of the lift pin 10. As shown in fig. 3, the head of the lift pin 10 is adjacent to the surface of the base plate 15. The duct 11 has an outlet opening facing the surface of the substrate 15 and an inlet opening facing away from the side of the substrate 15, the outlet opening of the duct 11 extending into the hollow structure of the lift pin 10, from which outlet opening gas is blown towards the substrate 15. The gas inlet of the conduit 11 may be externally connected to a gas supply for introducing gas.
Specifically, referring to fig. 1, the pipe 11 extends from the bottom of the lift pin 10 into and to the head of the lift pin 10 flush with the top of the lift pin 10. As shown in fig. 3, the bottom of the lift pin 10 faces away from the base plate 15. The lift pin 10 is configured to introduce gas through the pipe 11 and ventilate the substrate 15. Referring to fig. 2, the pipe 11 may not be disposed within the hollow structure of the lift pin 10, but may be in sealed connection with the bottom end of the hollow structure of the lift pin 10. The lift pins 10 introduce gas through the pipe 11, and the gas is blown toward the substrate 15 through the hollow structure.
As shown in fig. 1, 2 and 3, the lift pin 10 may further include a needle cap 12 sleeved on the head of the lift pin 10, wherein the needle cap is of a hollow structure, and specifically, is sleeved on the side wall surface of the head of the lift pin, so as not to block the air outlet of the hollow structure of the lift pin and not to affect ventilation of the hollow structure of the lift pin. The head of the lift pin 10 may be a part that extends to the bake plate 14 when the substrate 15 is lifted, and the leading-in needle cap 12 may protect the head of the lift pin 10 from being damaged by heat. The over-heated lift pin head also conducts heat to the substrate as it lifts the substrate, which can cause a temperature difference in the substrate, which can be reduced by the cap 12 covering the lift pin 10 head in this embodiment.
The lifting pin of the baking device in the embodiment of the invention is of a hollow structure, can extend into the through hole of the baking platform to ventilate the substrate, can weaken the adhesive force between the substrate and the surface of the mirrored baking platform, helps the substrate to be separated from the baking platform, and reduces the mirrored sticking phenomenon and the electrostatic discharge and fragment risks caused by the mirrored sticking phenomenon when the substrate is lifted.
The embodiment of the invention provides a baking device which can be applied to semiconductor equipment needing a baking process, such as glue spreading and developing equipment.
As shown in fig. 3, the roasting apparatus 13 includes: the substrate 15 is loaded on the baking platform 14, and at least one through hole is opened in the area of the baking platform 14 where the substrate 15 is loaded. The lift pin 10 is a hollow pin with a hollow structure, and is disposed below the baking platform 14, the hollow structure of the lift pin 10 is a gas flow channel, and the lift pin 10 extends into the through hole of the baking platform 14. The baking device 13 can introduce gas into the hollow structure of the lifting pin 10 to ventilate the substrate 15, weaken the adhesive force between the upper surface of the baking platform 14 and the substrate 15, help the substrate 15 to separate from the baking platform 14, and reduce the electrostatic discharge and the risk of fragment caused by the mirrorized adhesion phenomenon. In order to allow the lift pin 10 to extend into the through hole of the bake station 14, the cross-sectional dimension of the head of the lift pin 10 may be smaller than the cross-sectional dimension of the through hole, and the head of the lift pin 10 may be a portion of the lift pin 10 extending onto the bake station 14 when the lift pin 10 lifts the substrate 15.
The lifting pin 10 is disposed in the through hole of the baking platform 14 and does not exceed the upper surface of the baking platform 14. As shown in FIG. 1, the top of the lift pin 10 is flush with the upper surface of the bake plate 14, so as to shorten the distance of the gas acting on the substrate 15 and improve the ventilation effect. In this embodiment, the lift pins 10 may be disposed in the through holes of the bake station 14 when the lift pins 10 are required. In other embodiments, the lift pin 10 can be lowered to rest in other areas when the lift pin 10 is not needed.
As shown in fig. 3, the toasting device 13 may further comprise access pins 16, the access pins 16 are disposed above the toasting platform 14 for supporting the substrate 15, the number of the access pins 16 is at least two, and at least one lifting pin 10 is disposed between two adjacent access pins 16. Preferably, there should be one lift pin 10 centrally located between adjacent access pins 16. Since the substrate 15 is most likely to be warped down to contact and rub the upper surface of the bake plate 14 at the central position between the adjacent proximity pins 16, which results in local mirror-surface formation of the upper surface of the bake plate 14, the central position causes relatively serious risk of electrostatic discharge and chipping due to the mirror-surface adhesion between the substrate 15 and the upper surface of the bake plate 14 when the substrate 15 is lifted. In the present embodiment, the lifting pin 10 is disposed at the center between the adjacent proximity pins 16, so that the effect of improving the above phenomenon is more remarkable.
Specifically, as shown in fig. 3, the number of the through holes and the lifting pins 10 of the baking platform 14 may be two or more, each through hole is in a straight line, the number of the approach pins 16 is three or more, and the number of the lifting pins 10 is the same as the number of the through holes.
As shown in fig. 1, the lift pin 10 may further include a pipe 11 for introducing gas, and the pipe 11 may be disposed in the hollow structure of the lift pin 10 and may further extend to the head of the lift pin. As shown in fig. 3, the head of the lift pin 10 is adjacent to the surface of the base plate 15. The duct 11 has an outlet opening facing the surface of the substrate 15 and an inlet opening facing away from the side of the substrate 15, the outlet opening of the duct 11 extending into the hollow structure of the lift pin 10, from which outlet opening gas is blown towards the substrate 15. The gas inlet of the conduit 11 may be externally connected to a gas supply for introducing gas.
Specifically, referring to fig. 1, the pipe 11 extends from the bottom of the lift pin 10 into and to the head of the lift pin 10 flush with the top of the lift pin 10. As shown in fig. 3, the bottom of the lift pin 10 faces away from the base plate 15. The lift pin 10 is configured to introduce gas through the pipe 11 and ventilate the substrate 15. Referring to fig. 2, the pipe 11 may not be disposed within the hollow structure of the lift pin 10, but may be in sealed connection with the bottom end of the hollow structure of the lift pin 10. The lift pins 10 introduce gas through the pipe 11, and the gas is blown toward the substrate 15 through the hollow structure.
Specifically, as shown in fig. 4, the duct 11 includes a first duct extending into the hollow structure of the lift pin 10 and a second duct communicating with the first duct for introducing gas into the first duct. The second conduit may be externally connected to a gas supply to introduce gas.
Specifically, as shown in fig. 1 and 2, the lift pin 10 further includes a needle cap 12 having a hollow structure, and the needle cap 12 is sleeved on a side wall surface of the head of the lift pin 10, so as not to block an air outlet of the hollow structure of the lift pin and not to affect ventilation of the hollow structure of the lift pin. The head of the lift pin 10 may be a part of the lift pin 10 extending to the bake station when the lift pin 10 lifts the substrate, and the leading-in needle cap 12 may protect the head of the lift pin 10 from being damaged by heat. The over-heated lift pin head also conducts heat to the substrate as it lifts the substrate, which can cause a temperature difference in the substrate, which can be reduced by the cap 12 covering the lift pin 10 head in this embodiment.
As shown in fig. 4, the roasting apparatus 13 may further include a gas flow rate adjusting unit 17, and the gas flow rate adjusting unit 17 is used for adjusting the flow rate of the gas introduced into the duct 11. Specifically, the gas flow rate adjusting unit 17 is configured to detect a flow rate of the gas in the introducing pipe 11, and when the flow rate is greater than or equal to a preset flow rate value, the gas flow rate adjusting unit 17 is used to reduce the flow rate, so as to avoid the substrate 15 from shifting due to an excessive flow rate of the gas in the introducing pipe. The preset flow value is a critical value that causes the substrate 15 to shift when the flow of the gas introduced into the pipe exceeds the preset flow value, and can be obtained through experiments. The gas flow regulating unit 17 can also be used for increasing the gas flow by using the gas flow regulating unit 17 when detecting that the flow of the gas in the introducing pipeline is smaller than the preset flow range, so that the phenomenon that the adhesion force between the substrate 15 and the upper surface of the baking platform 14 cannot be weakened due to poor ventilation effect when the flow of the gas in the introducing pipeline is too low is avoided. The preset flow range meets the following requirements: when the flow rate of the gas introduced into the pipeline is within the preset flow rate range, the adhesive force between the substrate 15 and the upper surface of the baking platform 14 can be weakened; the preset flow range can be obtained through experiments.
As shown in fig. 4, the toasting device 13 further comprises a processing chamber 18 for carrying a toasting platform and a support bracket 19. Wherein the processing chamber 18 includes an upper frame 20 and a lower frame 21, the lower frame 21 having a through hole, the support bracket 19 being provided on the lower frame 20 for supporting the bake station 14, the through hole of the bake station 14 being aligned with the through hole of the lower frame 20. The introduction of the baking device 13 into the processing chamber 18 in this embodiment can collect heat, which is helpful for better baking the substrate 15.
As shown in fig. 5, an embodiment of the present invention further provides a method for baking a substrate, where the method includes steps 51 to 55:
step 51: the substrate is loaded onto a baking platform of a baking device.
Referring to fig. 3, the baking device 13 includes a baking platform 14, at least one through hole is formed in a region of the baking platform 14 where the substrate 15 is loaded, the baking device 13 further includes a lifting pin 10 for lifting the substrate 15 and having a hollow structure, the lifting pin 10 is disposed below the baking platform 14 and extends into the through hole of the baking platform 14, and the hollow structure of the lifting pin 10 is an airflow channel. For the specific limitation of the baking device 13, reference may be made to the foregoing embodiments, which are not repeated herein.
In a specific embodiment, described in conjunction with fig. 3, before step 51, or after step 51 and before the subsequent step 52, the specific position of the lift pin 10 may be detected, and the substrate 15 may be baked while the lift pin 10 is located in the through hole of the bake station 14. When the substrate is detected to be over the upper surface of the baking platform 14 due to the lifting pin 10 lifting the previous substrate, the lifting pin 10 needs to be lowered until the lifting pin 10 is located in the through hole of the baking platform 14, and then the substrate 15 is baked.
Specifically, a substrate 15 may be loaded onto the access pins 16 of the bake station 14.
Step 52: and carrying out heating treatment on the substrate by using the baking platform.
In a specific embodiment, as described with reference to fig. 3, after the substrate 15 is loaded in place, the heating platform 14 may be used to heat and bake the substrate 15, and depending on the material and process of the substrate 15, related baking parameters such as the heating and baking temperature of the substrate 15 may be set according to specific requirements.
Step 53: venting the substrate through the hollow structure of the lift pin.
As described with reference to fig. 3, in this step, the substrate 15 is ventilated through the hollow structure of the lift pin 10, that is, the substrate 15 is ventilated by introducing gas through the hollow structure of the lift pin 10, so as to weaken the adhesive force between the upper surface of the bake plate 14 and the substrate 15, and separate the substrate 15 from the upper surface of the bake plate 14. The gas may be ordinary air.
As an alternative embodiment, as shown in fig. 1, the lift pin 10 may further include a pipe 11 for introducing gas, and the pipe 11 may be disposed in the hollow structure of the lift pin 10 and may further extend to the head of the lift pin 11. As shown in fig. 3, the head of the lift pin 10 is adjacent to the surface of the base plate 15. The duct 11 has an outlet opening facing the surface of the substrate 15 and an inlet opening facing away from the side of the substrate 15, the outlet opening of the duct 11 extending into the hollow structure of the lift pin 10, from which outlet opening gas is blown towards the substrate 15. The gas inlet of the conduit 11 may be externally connected to a gas supply for introducing gas. For the specific limitation of the pipeline 11, reference is made to the foregoing embodiments, and details are not repeated. In step 53, the substrate 15 is vented through the conduit 11.
Specifically, as described in conjunction with fig. 3, the step of venting the substrate 15 through the hollow structure of the lift pin 10 includes: and if the flow of the gas introduced into the pipeline is detected to be larger than or equal to the preset flow value, reducing the flow.
The preset flow value is a critical value that causes the substrate 15 to shift when the flow of the gas in the introduction pipe 11 exceeds the preset flow value, and can be obtained through experiments. If the flow of the gas in the introducing pipeline 11 is detected to be smaller than the preset flow range, the gas flow is increased, and the situation that the adhesion force between the substrate 15 and the upper surface of the baking platform 14 cannot be weakened due to poor ventilation effect when the flow of the gas in the introducing pipeline is too low is avoided. The preset flow range meets the following requirements: when the flow rate of the gas introduced into the pipeline 11 is within the preset flow rate range, the adhesive force between the substrate 15 and the upper surface of the baking platform 14 can be weakened; the preset flow range can be obtained through experiments.
Specifically, as shown in fig. 4, the roasting apparatus 13 includes a gas flow rate adjusting unit 17, and the steps of detecting the flow rate of the gas introduced into the duct 11 and adjusting the flow rate of the gas may be implemented by the gas flow rate adjusting unit 17.
Specifically, before step 53, the method may further include the steps of: the incoming gas is compressed, cleaned and/or heated. The gas is compressed to increase the gas pressure and improve the blowing force of the gas on the substrate, the gas is cleaned and purified to reduce the pollution to the substrate, and the gas is heated to avoid the phenomenon that the temperature of the gas is too low to influence the baked substrate.
Step 54: and moving the lifting pin upwards to lift the substrate.
As described in connection with fig. 3, the lift pins 10 may contact the substrate 15 through the bake station 14 vias. The lift pin 10 may be driven to move upward by a driving means such as a motor.
Step 55: and unloading the substrate.
After the substrate 15 is completely lifted to the corresponding unloading position by the lift pins 10, the substrate 15 may be unloaded from the baking apparatus 13 using the substrate unloading apparatus.
In the substrate baking method in the embodiment of the invention, after the baking platform is used for heating the substrate, the lifting pin with the hollow structure is used for ventilating the substrate, so that the adhesive force between the substrate and the surface of the mirrorized baking platform can be weakened, the substrate and the baking platform can be separated, and the mirrorized sticking phenomenon and the electrostatic discharge and fragment risks caused by the mirrorized sticking phenomenon can be reduced when the substrate is lifted.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent flow transformations made by using the contents of the specification and the drawings, such as the mutual combination of technical features between various embodiments, or the direct or indirect application to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A baking device comprises a baking platform, a first heating device and a second heating device, wherein the baking platform is used for loading a substrate and heating and baking the substrate, and at least one through hole is formed in the substrate loading area of the baking platform; characterized in that the device further comprises: the lifting pin is used for lifting the substrate, is arranged below the baking platform and extends into the through hole of the baking platform, and is of a hollow structure which is a gas circulation channel and used for ventilating the substrate.
2. The apparatus of claim 1, wherein the lift pin further comprises: a conduit for introducing gas, the conduit extending into the hollow structure of the lift pin and extending to the lift pin head.
3. The apparatus of claim 1, wherein the lift pin further comprises: a conduit for introducing gas, the conduit being sealingly connected to the bottom end of the lift pin.
4. The device of claim 1, wherein the lift pin further comprises a needle cap, and the needle cap is a hollow structure and is sleeved on the side wall surface of the head of the lift pin.
5. The apparatus of any of claims 1-4, further comprising: at least two approach needles all arranged on the baking platform for supporting the substrate, and at least one lifting pin is arranged between every two adjacent approach needles.
6. The apparatus of any of claims 1-4, wherein the top end of the lift pin is flush with the upper surface of the bake station when the substrate is placed on the bake station.
7. The device of claim 5, wherein the number of the lift pins and the number of the through holes are two or more, each through hole is in a straight line, the number of the approach pins is three or more, and the number of the lift pins is the same as the number of the through holes.
8. A method of baking a substrate, the method comprising:
loading a substrate onto a baking platform of a baking device, wherein at least one through hole is formed in the substrate loading area of the baking platform, the baking device further comprises a lifting pin which is used for lifting the substrate and is of a hollow structure, and the lifting pin is arranged below the baking platform and extends into the through hole of the baking platform;
heating the substrate by using the baking platform;
venting a substrate through the hollow structure of the lift pin;
moving a lifting pin upwards to lift the substrate;
and unloading the substrate.
9. The method of claim 8, wherein the step prior to venting the substrate through the hollow structure of the lift pin comprises:
the introduced gas is compressed, cleaned and heated.
10. The method of claim 8 or 9, wherein the lift pin further comprises a conduit for introducing a gas, the conduit extending into the hollow structure of the lift pin;
the step of venting the substrate through the hollow structure of the lift pin comprises: if the flow of the gas introduced into the pipeline is detected to be larger than or equal to a preset flow value, reducing the flow; the preset flow value is a critical value which can cause the substrate to shift when the flow of the gas in the introducing pipeline exceeds the preset flow value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911020593.7A CN110828342A (en) | 2019-10-25 | 2019-10-25 | Baking device and substrate baking method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911020593.7A CN110828342A (en) | 2019-10-25 | 2019-10-25 | Baking device and substrate baking method |
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| CN110828342A true CN110828342A (en) | 2020-02-21 |
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| CN1737693A (en) * | 2004-08-20 | 2006-02-22 | 三星电子株式会社 | Wafer bake apparatus |
| CN103472603A (en) * | 2013-09-17 | 2013-12-25 | 京东方科技集团股份有限公司 | Supporting pin and display panel production equipment |
| CN203644735U (en) * | 2013-12-13 | 2014-06-11 | 昆山国显光电有限公司 | Improved substrate baking device |
| JP2016181665A (en) * | 2015-03-25 | 2016-10-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment device and thermal treatment method |
| CN106154607A (en) * | 2016-08-26 | 2016-11-23 | 京东方科技集团股份有限公司 | A kind of elevating mechanism |
| CN206059364U (en) * | 2016-07-22 | 2017-03-29 | 京东方科技集团股份有限公司 | A kind of baseplate support device |
| TWI645265B (en) * | 2017-06-15 | 2018-12-21 | 台灣積體電路製造股份有限公司 | Baking apparatus and baking method |
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2019
- 2019-10-25 CN CN201911020593.7A patent/CN110828342A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1737693A (en) * | 2004-08-20 | 2006-02-22 | 三星电子株式会社 | Wafer bake apparatus |
| CN103472603A (en) * | 2013-09-17 | 2013-12-25 | 京东方科技集团股份有限公司 | Supporting pin and display panel production equipment |
| CN203644735U (en) * | 2013-12-13 | 2014-06-11 | 昆山国显光电有限公司 | Improved substrate baking device |
| JP2016181665A (en) * | 2015-03-25 | 2016-10-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment device and thermal treatment method |
| CN206059364U (en) * | 2016-07-22 | 2017-03-29 | 京东方科技集团股份有限公司 | A kind of baseplate support device |
| CN106154607A (en) * | 2016-08-26 | 2016-11-23 | 京东方科技集团股份有限公司 | A kind of elevating mechanism |
| TWI645265B (en) * | 2017-06-15 | 2018-12-21 | 台灣積體電路製造股份有限公司 | Baking apparatus and baking method |
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