CN110808314B - 一种改善异质结太阳电池光电性能的方法 - Google Patents

一种改善异质结太阳电池光电性能的方法 Download PDF

Info

Publication number
CN110808314B
CN110808314B CN201911115337.6A CN201911115337A CN110808314B CN 110808314 B CN110808314 B CN 110808314B CN 201911115337 A CN201911115337 A CN 201911115337A CN 110808314 B CN110808314 B CN 110808314B
Authority
CN
China
Prior art keywords
post
treatment
covering layer
solar cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911115337.6A
Other languages
English (en)
Other versions
CN110808314A (zh
Inventor
俞健
李君君
何佳龙
李兵川
陈涛
黄跃龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huzhou Tuihuo Photoelectric Co ltd
Original Assignee
Southwest Petroleum University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest Petroleum University filed Critical Southwest Petroleum University
Priority to CN201911115337.6A priority Critical patent/CN110808314B/zh
Publication of CN110808314A publication Critical patent/CN110808314A/zh
Application granted granted Critical
Publication of CN110808314B publication Critical patent/CN110808314B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开一种改善异质结太阳电池光电性能的方法，所述覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能，步骤如下：(a)制备异质结太阳电池衬底；(b)沉积金属种子层栅极；(c)非栅极区域沉积覆盖层；(d)烘干覆盖层；(e)栅极区域电化学沉积金属电极；(f)覆盖层后处理；(g)烘干覆盖层。本发明所述之方法，能显著降低电化学沉积金属电极工艺复杂性，所用之聚合物覆盖层，处理后光电性能显著提高，亦可作为异质结太阳电池的透明导电薄膜，此方法既避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，也可少用或不用透明导电薄膜，有利于提高异质结太阳电池转换效率、降低生产成本，在工业化生产中优势显著。

Description

一种改善异质结太阳电池光电性能的方法
技术领域
本发明属于异质结太阳电池技术领域，涉及一种改善异质结太阳电池光电性能的方法。
背景技术
太阳能电池的原理是基于光生伏特效应，将太阳能直接转换为电能的一种装置，也是太阳能实际应用中的重要组成部分。目前，晶体硅太阳能电池已经成为光伏工业的主流，市场上80％以上的都是晶体硅太阳电池，而生产单晶硅的成本目前仍比较高、工艺流程复杂、总体转换效率不高、高温性能差、光致衰减等制约着其进一步的发展。
异质结太阳电池是在n型或p型单晶硅衬底上依次双面沉积本征非晶硅薄膜作为钝化层，以饱和单晶硅表面由于晶格突然截止产生的悬挂键，减少载流子复合中心。再依次沉积n型非晶硅薄膜和p型非晶硅薄膜作为发射极和背面电场，为了形成内建电场以及产生电荷分离场，可有效提高开路电压、填充因子以及转换效率，这种电池既利用了薄膜电池的制造工艺，也充分发挥了晶体硅和非晶硅的材料特性，具有较高的转换效率(目前为27％左右)、低温工艺、双面发电、高转换效率(产业化)≥23％等优点，成为太阳电池发展的热点。
异质结(SHJ)太阳电池因其透明导电薄膜(TCO)优良的导电性，其电镀选择性极差，需采用掩膜工艺来制备电极。常见的图形化掩膜技术有光刻技术、丝网印刷等。光刻工艺可以获得微小、精密的图形(线宽尺寸一般是数百微米至数十微米)，但光刻加工面积较小且工艺复杂，包括表面清洗、旋涂光刻胶、前烘、对准曝光、后烘、显影、硬烘、去胶等步骤。丝网印刷技术可以在一般太阳能电池面积(156mm×156mm)上，印刷图形化掩膜浆料，但图形尺寸和精度受限于丝网印刷技术，线宽尺寸一般为数十至数百微米。但以上工艺均需要后期去除掩膜的步骤，工艺复杂。本发明提出一种改善异质结太阳电池光电性能的方法，能显著降低电化学沉积金属电极工艺的复杂性，所用之聚合物覆盖层，在处理后具有优良的光电性能，可进一步作为异质结太阳电池的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率，进一步实现高效、低成本的目的。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷，提出一种改善异质结太阳电池光电性能的方法。
为了解决上述技术问题，本发明的技术方案是：一种改善异质结太阳电池光电性能的方法，它的步骤如下：
(a)制备异质结(SHJ)太阳电池衬底；
(b)沉积金属种子层栅极；
(c)非栅极区域沉积覆盖层；
(d)烘干覆盖层；
(e)栅极区域电化学沉积金属电极；
(f)覆盖层后处理；
(g)烘干覆盖层。
进一步，所述的覆盖层的材料成分中含有聚合物、有机溶剂及导电粒子。
进一步，在所述的步骤(c)中，制备覆盖层的方法可以包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀等方法中的一种或多种。
进一步，在所述的步骤(d)中，烘干覆盖层的温度为50℃～300℃；时间为1min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体。
进一步，在所述的步骤(d)后，覆盖层的厚度为0.05μm～5μm。
进一步，在所述的步骤(3)中，电极制备方法可以包括电镀、化学镀、光诱导电镀、喷墨打印、丝网印刷、滴涂等方法中的一种或多种。
进一步，在所述的步骤(f)中，后处理覆盖层的方法可以包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理等方法中的一种或多种；后处理时间为1min～80min；后处理温度为10℃～80℃。
进一步，在所述的步骤(g)中，所述的覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能，材料为聚(3,4-乙烯二氧基噻吩)-聚苯乙烯磺酸或聚对苯二甲酸乙二酯或聚乙烯或聚氯乙烯或聚酰亚胺或聚甲基丙烯酸甲酯，金属纳米颗粒或纳米线，聚噻吩和聚阴离子化合物中的一种或几种的组合。
进一步，在上述步骤后，所述的覆盖层后处理前电导率不大于10S/cm；后处理后覆盖层的电导率大于500S/cm。
采用了上述技术方案后，本发明方法相比于传统的掩膜方法具有更简单的工艺步骤；另外本发明涂覆掩膜层的工艺和材料成本也十分低廉，配合后处理的步骤，可得到光电性能优良的覆盖层且进一步作为异质结太阳电池(SHJ)的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率的同时降低生产成本，在工业化规模生产中具有明显的优势。
附图说明
图1为采用本方法的SHJ太阳电池的结构示意图；
图2为基于本方法的SHJ太阳电池的工艺流程：
(a)SHJ太阳电池衬底；
(b)沉积金属种子层栅极；
(c)非栅极区域沉积覆盖层；
(d)栅极区域电化学沉积铜电极；
(e)栅极区域电化学沉积锡；
(f)覆盖层后处理；
图3为覆盖层处理前后的示意图：
(a)为覆盖层后处理前图示；
(b)为覆盖层后处理后图示。
具体实施方式
为了使本发明的内容更容易被清晰地理解，下面根据实施例并结合附图，对本发明作进一步详细的说明。
如图1所示，应用本发明改善异质结太阳电池光电性能的方法，其工艺包括：
(a)对N型单晶硅衬底层进行损伤去除及表面织构化；
(b)在N型单晶硅衬底层的双面均沉积本征非晶硅薄膜；
(c)在两个沉积本征非晶硅薄膜的表面分别沉积P型非晶硅薄膜、N型非晶硅薄膜；
(d)在P型非晶硅薄膜的表面沉积掺锡的氧化铟透明导电薄膜；
(e)在N型非晶硅薄膜的表面沉积掺锡的氧化铟透明导电薄膜；
上述步骤(d)和(e)中的掺锡的氧化铟透明导电薄膜可以通过PECVD、PVD、RPD(反应等离子体沉积)等方法制备，厚度在1nm～1000nm之间；
(f)再在掺锡的氧化铟透明导电薄的表面沉积金属种子层栅极，厚度为1nm～100nm；
(g)将覆盖层材料按设计的图形制备在非栅极区域，制备覆盖层的方法可以包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀等方法中的一种或多种。
(h)后再进行烘干，烘干温度为50℃～300℃之间；时间为1min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体；覆盖层的厚度为0.05μm～5μm；如图3(a)所示，得到的覆盖层的电导率不大于10S/cm；
(i)在金属种子层栅极处双面依次制备Cu作为金属传导层、制备Sn作为保护层，制备方法可以包括电镀、化学镀、光诱导电镀、喷墨打印、丝网印刷、滴涂等方法中的一种或多种。
(j)在所述的步骤(i)后，将覆盖层经过后处理，后处理的方法可以包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理等方法中的一种或多种；后处理时间为1min～80min；后处理温度为10℃～80℃；如图3(b)所示，得到的覆盖层的电导率大于500S/cm。
经过上述步骤后，得到光电性能优良的覆盖层，可进一步作为异质结太阳电池的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率的同时降低生产成本，在工业化规模生产中具有明显的优势。
以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (5)

1.一种改善异质结太阳电池光电性能的方法，其特征在于它的步骤如下：
(a)制备异质结太阳电池衬底；
(b)沉积金属种子层；
(c)非栅极区域沉积覆盖层；
(d)烘干覆盖层；
(e)栅极区域电化学沉积金属电极；
(f)后处理覆盖层；
(g)烘干覆盖层；
所述的覆盖层的材料成分中含有聚合物、有机溶剂及导电粒子；
在所述的步骤(f)中，后处理覆盖层的方法包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理方法中的一种或多种；后处理时间为1min～20min；后处理温度为10℃～80℃；
所述的覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能。
2.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(c)中，制备覆盖层的方法包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀方法中的一种或多种。
3.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(d)中，烘干覆盖层的温度为50℃～300℃；时间为1min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体。
4.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(d)后，覆盖层的厚度为0.05μm～50μm。
5.根据权利要求2所述的一种改善异质结太阳电池光电性能的方法，其特征在于：所述的覆盖层后处理前电导率不大于10S/cm；后处理后覆盖层的电导率大于500S/cm。
CN201911115337.6A 2019-11-14 2019-11-14 一种改善异质结太阳电池光电性能的方法 Active CN110808314B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911115337.6A CN110808314B (zh) 2019-11-14 2019-11-14 一种改善异质结太阳电池光电性能的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911115337.6A CN110808314B (zh) 2019-11-14 2019-11-14 一种改善异质结太阳电池光电性能的方法

Publications (2)

Publication Number Publication Date
CN110808314A CN110808314A (zh) 2020-02-18
CN110808314B true CN110808314B (zh) 2021-05-11

Family

ID=69502785

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911115337.6A Active CN110808314B (zh) 2019-11-14 2019-11-14 一种改善异质结太阳电池光电性能的方法

Country Status (1)

Country Link
CN (1) CN110808314B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114597270B (zh) * 2022-05-09 2022-07-29 苏州晶洲装备科技有限公司 一种异质结太阳电池及其制备方法和应用
CN115323344A (zh) * 2022-08-09 2022-11-11 通威太阳能（安徽）有限公司 太阳电池及其生产设备、铜种子层镀膜工艺及镀膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107212A (zh) * 2013-02-01 2013-05-15 中国科学院上海微系统与信息技术研究所 具有电镀电极的异质结太阳电池及制备方法
CN104157726A (zh) * 2013-05-15 2014-11-19 联景光电股份有限公司 太阳能电池及其制造方法
CN207425868U (zh) * 2017-11-27 2018-05-29 君泰创新（北京）科技有限公司 一种太阳能电池

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312426B2 (en) * 2011-12-07 2016-04-12 International Business Machines Corporation Structure with a metal silicide transparent conductive electrode and a method of forming the structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107212A (zh) * 2013-02-01 2013-05-15 中国科学院上海微系统与信息技术研究所 具有电镀电极的异质结太阳电池及制备方法
CN104157726A (zh) * 2013-05-15 2014-11-19 联景光电股份有限公司 太阳能电池及其制造方法
CN207425868U (zh) * 2017-11-27 2018-05-29 君泰创新（北京）科技有限公司 一种太阳能电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
固相法制备纳米 ZnO 及其染料敏化太阳电池性能;董林 等;《太阳能学报》;20151231;第36卷(第12期);第2961-2965页 *

Also Published As

Publication number Publication date
CN110808314A (zh) 2020-02-18

Similar Documents

Publication Publication Date Title
CN108807565B (zh) 一种钝化接触电极结构，其适用的太阳能电池及制作方法
CN102263204B (zh) 一种有机-无机杂化太阳能电池及其制备方法
CN102437243B (zh) 异质浮动结背钝化的hit太阳能电池结构及其制备工艺
EP2387079A2 (en) Solar cell with metal grid
US20180190919A1 (en) Conductive polymer/si interfaces at the backside of solar cells
CN105720197B (zh) 一种自驱动宽光谱响应硅基杂化异质结光电传感器及其制备方法
US20130125974A1 (en) Solar cell with metal grid fabricated by electroplating
US20120222731A1 (en) Heterojunction Solar Cell Having Amorphous Silicon Layer
CN110808314B (zh) 一种改善异质结太阳电池光电性能的方法
TW201104907A (en) Surface treatment of silicon
CN102280588B (zh) 硅基核壳纳米线光伏电池及其制备工艺
WO2023185350A1 (zh) 用于形成光伏器件的栅线电极的方法和光伏器件
CN114284396B (zh) 栅线电极制备方法及太阳能电池
CN107275432B (zh) 一种晶体硅太阳能电池及其制备方法
Li et al. Performance improvement of PEDOT: PSS/N-Si heterojunction solar cells by alkaline etching
CN102270668B (zh) 一种异质结太阳能电池及其制备方法
CN111525031A (zh) 一种钙钛矿的三结叠层太阳能电池及其制备方法
US20230335654A1 (en) Solar cell and manufacturing method thereof
CN102148291B (zh) 低欧姆接触的背接触电池的制造方法
CN113745366B (zh) 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法
CN103594630B (zh) 一种硅基有机太阳电池及其制备方法
CN113471304A (zh) 一种局域钝化接触结构电池及其制备方法
CN108336181B (zh) 一种太阳能电池及其制备方法
CN110556433A (zh) 一种碲化镉纳米晶太阳电池及其制备方法
CN203774376U (zh) 一种硅基有机太阳电池

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230626

Address after: No. 55, Xingshan North Road, Fuxi Street, Deqing County, Huzhou, Zhejiang Province 313000

Patentee after: Huzhou Tuihuo Photoelectric Co.,Ltd.

Address before: 610500, Xindu Avenue, Xindu District, Sichuan, Chengdu, 8

Patentee before: SOUTHWEST PETROLEUM University