CN110808314A - 一种改善异质结太阳电池光电性能的方法 - Google Patents
一种改善异质结太阳电池光电性能的方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 230000000873 masking effect Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 46
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229940075507 glyceryl monostearate Drugs 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 239000001788 mono and diglycerides of fatty acids Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 claims description 2
- 239000002082 metal nanoparticle Substances 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 2
- 229920000447 polyanionic polymer Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 238000004070 electrodeposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开一种改善异质结太阳电池光电性能的方法，所述覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能，步骤如下：(a)制备异质结太阳电池衬底；(b)沉积金属种子层栅极；(c)非栅极区域沉积覆盖层；(d)烘干覆盖层；(e)栅极区域电化学沉积金属电极；(f)覆盖层后处理；(g)烘干覆盖层。本发明所述之方法，能显著降低电化学沉积金属电极工艺复杂性，所用之聚合物覆盖层，处理后光电性能显著提高，亦可作为异质结太阳电池的透明导电薄膜，此方法既避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，也可少用或不用透明导电薄膜，有利于提高异质结太阳电池转换效率、降低生产成本，在工业化生产中优势显著。
Description
技术领域
本发明属于异质结太阳电池技术领域，涉及一种改善异质结太阳电池光电性能的方法。
背景技术
太阳能电池的原理是基于光生伏特效应，将太阳能直接转换为电能的一种装置，也是太阳能实际应用中的重要组成部分。目前，晶体硅太阳能电池已经成为光伏工业的主流，市场上80％以上的都是晶体硅太阳电池，而生产单晶硅的成本目前仍比较高、工艺流程复杂、总体转换效率不高、高温性能差、光致衰减等制约着其进一步的发展。
异质结太阳电池是在n型或p型单晶硅衬底上依次双面沉积本征非晶硅薄膜作为钝化层，以饱和单晶硅表面由于晶格突然截止产生的悬挂键，减少载流子复合中心。再依次沉积n型非晶硅薄膜和 p型非晶硅薄膜作为发射极和背面电场，为了形成内建电场以及产生电荷分离场，可有效提高开路电压、填充因子以及转换效率，这种电池既利用了薄膜电池的制造工艺，也充分发挥了晶体硅和非晶硅的材料特性，具有较高的转换效率(目前为27％左右)、低温工艺、双面发电、高转换效率(产业化)≥23％等优点，成为太阳电池发展的热点。
异质结(SHJ)太阳电池因其透明导电薄膜(TCO)优良的导电性，其电镀选择性极差，需采用掩膜工艺来制备电极。常见的图形化掩膜技术有光刻技术、丝网印刷等。光刻工艺可以获得微小、精密的图形(线宽尺寸一般是数百微米至数十微米)，但光刻加工面积较小且工艺复杂，包括表面清洗、旋涂光刻胶、前烘、对准曝光、后烘、显影、硬烘、去胶等步骤。丝网印刷技术可以在一般太阳能电池面积(156mm×156mm)上，印刷图形化掩膜浆料，但图形尺寸和精度受限于丝网印刷技术，线宽尺寸一般为数十至数百微米。但以上工艺均需要后期去除掩膜的步骤，工艺复杂。本发明提出一种改善异质结太阳电池光电性能的方法，能显著降低电化学沉积金属电极工艺的复杂性，所用之聚合物覆盖层，在处理后具有优良的光电性能，可进一步作为异质结太阳电池的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率，进一步实现高效、低成本的目的。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷，提出一种改善异质结太阳电池光电性能的方法。
为了解决上述技术问题，本发明的技术方案是：一种改善异质结太阳电池光电性能的方法，它的步骤如下：
(a)制备异质结(SHJ)太阳电池衬底；
(b)沉积金属种子层栅极；
(c)非栅极区域沉积覆盖层；
(d)烘干覆盖层；
(e)栅极区域电化学沉积金属电极；
(f)覆盖层后处理；
(g)烘干覆盖层。
进一步，所述的覆盖层的材料成分中含有聚合物、有机溶剂及导电粒子。
进一步，在所述的步骤(c)中，制备覆盖层的方法可以包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀等方法中的一种或多种。
进一步，在所述的步骤(d)中，烘干覆盖层的温度为 50℃～300℃；时间为1min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体。
进一步，在所述的步骤(d)后，覆盖层的厚度为0.05μm～5 μm。
进一步，在所述的步骤(3)中，电极制备方法可以包括电镀、化学镀、光诱导电镀、喷墨打印、丝网印刷、滴涂等方法中的一种或多种。
进一步，在所述的步骤(f)中，后处理覆盖层的方法可以包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理等方法中的一种或多种；后处理时间为1min～80 min；后处理温度为10℃～80℃。
进一步，在所述的步骤(g)中，所述的覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能，材料为聚(3,4-乙烯二氧基噻吩)-聚苯乙烯磺酸或聚对苯二甲酸乙二酯或聚乙烯或聚氯乙烯或聚酰亚胺或聚甲基丙烯酸甲酯，金属纳米颗粒或纳米线，聚噻吩和聚阴离子化合物中的一种或几种的组合。
进一步，在上述步骤后，所述的覆盖层后处理前电导率不大于10S/cm；后处理后覆盖层的电导率大于500S/cm。
采用了上述技术方案后，本发明方法相比于传统的掩膜方法具有更简单的工艺步骤；另外本发明涂覆掩膜层的工艺和材料成本也十分低廉，配合后处理的步骤，可得到光电性能优良的覆盖层且进一步作为异质结太阳电池(SHJ)的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率的同时降低生产成本，在工业化规模生产中具有明显的优势。
附图说明
图1为采用本方法的SHJ太阳电池的结构示意图；
图2为基于本方法的SHJ太阳电池的工艺流程：
(a)SHJ太阳电池衬底；
(b)沉积金属种子层栅极；
(c)非栅极区域沉积覆盖层；
(d)栅极区域电化学沉积铜电极；
(e)栅极区域电化学沉积锡；
(f)覆盖层后处理；
图3为覆盖层处理前后的示意图：
(a)为覆盖层后处理前图示；
(b)为覆盖层后处理后图示。
具体实施方式
为了使本发明的内容更容易被清晰地理解，下面根据实施例并结合附图，对本发明作进一步详细的说明。
如图1所示，应用本发明改善异质结太阳电池光电性能的方法，其工艺包括：
(a)对N型单晶硅衬底层进行损伤去除及表面织构化；
(b)在N型单晶硅衬底层的双面均沉积本征非晶硅薄膜；
(c)在两个沉积本征非晶硅薄膜的表面分别沉积P型非晶硅薄膜、N型非晶硅薄膜；
(d)在P型非晶硅薄膜的表面沉积掺锡的氧化铟透明导电薄膜；
(e)在N型非晶硅薄膜的表面沉积掺锡的氧化铟透明导电薄膜；
上述步骤(d)和(e)中的掺锡的氧化铟透明导电薄膜可以通过PECVD、PVD、RPD(反应等离子体沉积)等方法制备，厚度在1 nm～1000nm之间；
(f)再在掺锡的氧化铟透明导电薄的表面沉积金属种子层栅极，厚度为1nm～100nm；
(g)将覆盖层材料按设计的图形制备在非栅极区域，制备覆盖层的方法可以包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀等方法中的一种或多种。
(h)后再进行烘干，烘干温度为50℃～300℃之间；时间为1 min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体；覆盖层的厚度为0.05μm～5μm；如图3(a)所示，得到的覆盖层的电导率不大于10S/cm；
(i)在金属种子层栅极处双面依次制备Cu作为金属传导层、制备Sn作为保护层，制备方法可以包括电镀、化学镀、光诱导电镀、喷墨打印、丝网印刷、滴涂等方法中的一种或多种。
(j)在所述的步骤(i)后，将覆盖层经过后处理，后处理的方法可以包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理等方法中的一种或多种；后处理时间为1 min～80min；后处理温度为10℃～80℃；如图3(b)所示，得到的覆盖层的电导率大于500S/cm。
经过上述步骤后，得到光电性能优良的覆盖层，可进一步作为异质结太阳电池的透明导电薄膜层而存在，此方法不仅避免了常规异质结太阳电池电化学沉积电极去除掩膜的工艺，还可降低透明导电薄膜的沉积厚度，有利于提高异质结太阳电池的转换效率的同时降低生产成本，在工业化规模生产中具有明显的优势。
以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (9)
1.一种改善异质结太阳电池光电性能的方法，其特征在于它的步骤如下：
(a)制备异质结(SHJ)太阳电池衬底；
(b)沉积金属种子层；
(c)非栅极区域沉积覆盖层；
(d)烘干覆盖层；
(e)栅极区域电化学沉积金属电极；
(f)后处理覆盖层；
(g)烘干覆盖层。
2.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：所述的覆盖层的材料成分中含有聚合物、有机溶剂及导电粒子。
3.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(c)中，制备覆盖层的方法可以包括光刻、喷墨打印、旋涂、丝网印刷、层压干膜、狭缝喷涂、等离子体刻蚀、激光烧蚀等方法中的一种或多种。
4.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(d)中，烘干覆盖层的温度为50℃～300℃；时间为1min～60min；烘干气氛为空气、氧气、氮气、氩气或氮氢混合气体。
5.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(d)后，覆盖层的厚度为0.05μm～50μm。
6.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(e)，电极制备方法可以包括电镀、化学镀、光诱导电镀、喷墨打印、丝网印刷、滴涂等方法中的一种或多种。
7.根据权利要求1所述的一种改善异质结太阳电池光电性能的方法，其特征在于：在所述的步骤(f)中，后处理覆盖层的方法可以包括无水乙醇后处理、丙酮后处理、异丙醇后处理、乙烯基乙二醇后处理、甘油单硬脂酸酯后处理、二乙二醇甲醚后处理、二甲基亚砜后处理、氯苯后处理、甲醇后处理、甲酸后处理、二甲苯后处理、硫酸后处理、盐酸后处理等方法中的一种或多种；后处理时间为1min～20min；后处理温度为10℃～80℃。
8.根据权利要求2所述的一种改善异质结太阳电池光电性能的方法，其特征在于：所述的覆盖层具有表面减反射、载流子传导、电极选择性沉积掩膜之功能，材料为聚(3,4-乙烯二氧基噻吩)-聚苯乙烯磺酸或聚对苯二甲酸乙二酯或聚乙烯或聚氯乙烯或聚酰亚胺或聚甲基丙烯酸甲酯，金属纳米颗粒或纳米线，聚噻吩和聚阴离子化合物中的一种或几种的组合。
9.根据权利要求2所述的一种改善异质结太阳电池光电性能的方法，其特征在于：所述的覆盖层后处理前电导率不大于10S/cm；后处理后覆盖层的电导率大于500S/cm。
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