CN110804726A - Binding method of rotary target material - Google Patents
Binding method of rotary target material Download PDFInfo
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- CN110804726A CN110804726A CN201911025924.6A CN201911025924A CN110804726A CN 110804726 A CN110804726 A CN 110804726A CN 201911025924 A CN201911025924 A CN 201911025924A CN 110804726 A CN110804726 A CN 110804726A
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- indium
- target
- heating device
- target material
- pipeline
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a binding method of a rotary target, which comprises the steps of coarsening the target and a titanium tube, respectively metalizing the target and the titanium tube, and uniformly coating a layer of soldering flux on the target and the titanium tube; assembling the target material and the titanium tube, starting a heating device, removing an indium liquid oxide film in an indium tank, opening an indium pipeline valve to enable the indium liquid to slowly fill the whole welding line from the bottom to an indium tank, and then starting to cool the target material in sections; and finally cooling to room temperature to finish the binding process of the whole target. The invention adopts the mode of binding the whole target material, can simply and efficiently finish the binding work of a plurality of target materials, and has the advantages that: high-temperature assembly is not needed, the assembly time is not strictly controlled, and the automation level is high; the requirements on the labor intensity of workers and the proficiency of the operation of workers are not high, and the welding rate and the welding quality are good.
Description
Technical Field
The invention relates to a binding method for a magnetron sputtering coating rotary target, in particular to a method for simultaneously binding multiple sections of rotary targets.
Background
Magnetron sputtering is one of the main techniques for preparing thin film materials, and is widely applied in the technical fields of electronic thin films, optical thin films, photoelectric thin films, magnetic thin films, superconducting thin films and the like. With the development of science and technology, the coating industry has become a specialized industry, and the market of the target material is further expanded. Sputtering targets are generally of two types: planar targets and rotary targets.
The planar target is used at first, and the utilization rate of the planar target is generally only 20% -30%; with the progress of the technology, the transition to the rotating target is gradually started, firstly, the rotating target continuously rotates in the using process, the film forming is uniform, the stability is high, the yield is high, the utilization rate can reach more than 80%, and the target material nodulation phenomenon cannot occur in the using process.
The rotary target cannot be directly used and needs to be welded on the back tube, and the bonding rate and the bonding quality of target binding directly influence the sputtering use of the target. In the sputtering process, if the target tube, the back tube and the indium layer are not bonded enough, poor conduction and poor heat dissipation can occur in the sputtering process, so that local heating is not uniform, and the target is easy to miss or even crack (ceramic target).
The rotary target is in curved surface contact with the back tube, different from a plane target, the rotary target and the back tube are generally heated in the tube target binding process, then molten solder is injected into a binding gap, the rotary target binding process is characterized in that a plurality of sections of rotary target tubes are brazed on the back tube, the larger the length of a single section of the rotary target is, the smaller the wall thickness is, the more difficult the casting uniformity and quality are to control, and the higher the requirement of the ceramic target material on temperature control is.
At present, the domestic rotary target binding adopts a sectional binding method, which has high requirements on the proficiency of staff, higher labor intensity and poor control on binding uniformity and binding quality.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method for binding the rotary target can bind multiple sections of rotary targets at the same time, does not need high-temperature assembly, and does not strictly control the assembly time; the requirements on the labor intensity of workers and the proficiency of the operation of workers are not high, and the welding quality is good.
The technical scheme for solving the technical problems is as follows: a binding method of a rotary target material adopts a binding device which comprises a heating platform, a mold base, an outer heating device, an inner heating device, an upper end cover, a target material pressing block, a pressing rod, an indium groove and an indium groove heating device, wherein the mold base is provided with an indium inlet channel, the indium groove and the indium inlet channel are communicated through an indium pipeline, a pipeline heating device is arranged outside the indium pipeline, and a valve is arranged on the indium pipeline;
the binding method comprises the following steps:
firstly, roughening the target material and the back tube;
secondly, respectively carrying out metallization treatment on the target material and the back tube;
thirdly, uniformly coating a layer of soldering flux on the inner wall of the target material and the outer wall of the back tube at normal temperature after the treatment in the step two;
respectively assembling N sections of target materials to the outer side of the back pipe, wherein the value of N is 1-10, placing an internal heating device in the back pipe, placing the back pipe in a mold base, placing the target materials on the mold base, and placing the mold base and the internal heating pipe on a heating platform; an outer heating device is sleeved outside the target and positioned on a die base, the top end face of the target is tightly pressed through a target pressing block, an upper end cover is placed on the target pressing block, a back tube and the inner heating device, an indium overflow groove is formed among the upper end cover, the target pressing block and the back tube, an indium overflow port is further formed in the upper end cover at the position of the indium overflow groove, a pressing rod is placed on the upper end cover, sealing rings are arranged between the die base and the back tube and between the target pressing block and the upper end cover, a welding seam space is formed between the back tube and the target, and the welding seam space is respectively communicated with an indium inlet channel and the;
after the coaxiality of N sections of target materials is well controlled, applying pressure through a pressure rod to tightly press an upper end cover, starting a heating platform, an inner heating device, an outer heating device, a pipeline heating device and an indium tank heating device to heat, opening a valve on an indium pipeline after the temperatures of the target materials and a back pipe reach preset temperatures, enabling indium liquid reaching the preset temperatures to be injected into a welding seam space formed by the back pipe and the target materials from an indium channel of a mold base, slowly rising the indium liquid until the indium liquid is full of an indium overflow groove, and closing the valve to stop injecting the indium;
and (VI) closing the heating platform, the inner heating device, the pipeline heating device and the indium tank heating device to stop heating, simultaneously controlling the outer heating device to gradually cool the target material, and closing the outer heating device to cool the target material to room temperature after the indium in the indium overflow tank is cooled and solidified.
And (iv) the external heating device is heating equipment with a sectional heating function, and in the step (six), the external heating device is controlled to cool the target material in sections according to the sequence from bottom to top.
A pipeline heating device is arranged outside the indium pipeline, namely a flexible heating belt is wrapped outside the indium pipeline.
Compared with the prior art, the invention can bind a plurality of sections of rotary targets simultaneously, has higher automation level, reduces the labor intensity of workers, has low requirement on the proficiency of the workers, improves the production efficiency, is not limited by the length of the binding, has good welding stability and high welding quality, and has the following specific advantages:
(1) the target material group and the back tube are assembled at normal temperature, and compared with the existing mode of assembling at high temperature, the method is easier to operate, reduces the risk of scalding, has more free assembling time, and does not need to strictly control the assembling time because of avoiding oxidation; the coaxiality and the clearance are more convenient to control;
(2) the indium liquid adopts a mode of slowly injecting at the lower end, so that gas included in the indium liquid can be better discharged;
(3) the target material and the back tube are coated with a layer of soldering flux, so that an oxide film of the metalized layer can be removed, the metalized layer of the assembly is protected from being oxidized in the heating process, and the wettability of the metalized layer is enhanced;
(4) the external heating equipment has the capability of controlling the temperature in sections, can control the equipment to cool gradually from bottom to top, has the effect of directional feeding, and enhances the welding effect of the target material and the back tube.
Drawings
Fig. 1 is a schematic structural diagram of a binding apparatus used in the present invention.
Fig. 2 is an enlarged view of a portion a of fig. 1.
In the figure: 1-a heating platform, 2-a mould base, 21-an indium inlet channel, 3-a target, 4-an external heating device, 5-a target pressing block, 6-an indium overflow groove, 61-an indium overflow port, 7-a back pipe, 8-a pressure rod, 9-an upper end cover, 10-an internal heating device, 11-an indium groove, 12-an indium pipeline, 13-a pipeline heating device and 14-a valve.
Detailed Description
Example 1:
a binding method of a rotary target material is characterized in that a back tube is a metal tube titanium tube, the target material is an ITO ceramic tube target, the adopted binding device comprises a heating platform 1, a mold base 2, an outer heating device 4, an inner heating device 10, an upper end cover 9, a target material pressing block 5, a pressing rod 8, an indium groove 11 and an indium groove heating device, the mold base is annular, an indium inlet channel 21 is formed in the mold base, the indium groove and the indium inlet channel are communicated through an indium pipeline 12, a pipeline heating device 13 is arranged outside the indium pipeline, namely a flexible heating belt wraps the outer side of the indium pipeline, a valve 14 is arranged on the indium pipeline, and the outer heating device is a heating sleeve with a segmented heating function.
The method comprises the following steps: respectively roughening the surfaces of the metal tube and the ceramic tube; and then heating the target material and the metal tube to 200 ℃, metalizing the target material and the metal tube by using an ultrasonic indium coating machine, naturally cooling to a normal temperature state, and then uniformly coating a layer of soldering flux on the inner surface of the target material and the outer surface of the titanium tube respectively.
Respectively assembling 6 sections of target materials 3 to the outer side of a back pipe 7, placing an internal heating device 10 in the back pipe, placing the back pipe in a mold base 2, placing the target materials on the mold base, and placing the mold base and an internal heating pipe on a heating platform 1; the outer heating device 4 is sleeved on the outer side of the target 3 and located on the die base 2, the top end face of the target 3 is tightly pressed through the target pressing block 5, the upper end cover 9 is placed on the target pressing block 5, the back tube 7 and the inner heating device 10, an indium overflow groove 6 is formed among the upper end cover, the target pressing block and the back tube, an indium overflow port 61 is further formed in the upper end cover at the indium overflow groove, the pressing rod 8 is placed on the upper end cover, sealing rings are arranged between the die base and the back tube and between the target pressing block and the upper end cover, a welding seam space is formed between the back tube and the target, and the welding seam space is respectively communicated with the indium inlet channel and the. The indium groove 11 is arranged at a position higher than the upper end cover.
After the coaxiality of 6 sections of target materials is controlled, pressure is applied through a pressure rod to press an upper end cover, a heating platform, an inner heating device, an outer heating device, a pipeline heating device and an indium tank heating device are started to heat, after the temperatures of the target materials and a back pipe reach a preset temperature, an oxide film naturally formed on the surface of indium liquid in an indium tank is removed, a valve on an indium pipeline is opened, the indium liquid reaching the preset temperature is injected into a welding seam space formed by the back pipe and the target materials from an indium channel of a mold base due to self weight, the indium liquid slowly rises until the indium overflow groove is filled, and at the moment, the valve is closed to stop indium injection.
And then closing the heating platform, the inner heating device, the pipeline heating device and the indium tank heating device to stop heating, controlling the outer heating device to cool the target material in a segmented manner according to the sequence from bottom to top, and finally closing the outer heating device after the indium in the indium overflow groove is cooled and solidified as observed from the indium overflow port to cool the target material to room temperature, thereby completing the binding process of the whole target material.
Practice proves that: the target material bound by the method is detected to have the bonding rate more than 97% by an immersion method ultrasonic inspection device, a sample with the size of 10mm multiplied by 10mm is taken for tensile test through destructive test, the tensile stress of the target material and a titanium tube is more than 20N, the shearing force is more than 20N, and the target material and the titanium tube can completely meet the use requirements of customers through the coating sputtering test of the customers. And through observation, the phenomena of shrinkage cavity, looseness, oxidation and the like of the solder layer of the bound target material are not found.
The heating device with the segmented heating function in the embodiment is divided into a plurality of heating zones, each heating zone corresponds to one temperature controller, and the temperature controllers are integrated and controlled together.
The invention can bind only 1 section of target material or simultaneously bind a plurality of sections of target materials, and can simultaneously bind 2 sections, 3 sections, 4 sections, 5 sections or more, and the specific binding quantity is determined according to actual needs.
The coarsening treatment mode of the target and the back tube is the same as that of the prior art, and comprises methods of sand blasting, roll grinding, mechanical turning, manual coarsening, chemical corrosion and the like.
The soldering flux is one of soldering paste or soldering flux liquid, has certain weak acidity, firstly reduces an oxide film into indium through reduction reaction, simultaneously protects a fresh metal layer from being oxidized, injects the indium liquid at proper temperature, changes one part of the soldering flux into organic matters, and floats the other part of the soldering flux together with indium slag.
Claims (3)
1. A binding method of a rotary target material is characterized in that: the adopted binding device comprises a heating platform (1), a die base (2), an outer heating device (4), an inner heating device (10), an upper end cover (9), a target material pressing block (5), a pressing rod (8), an indium groove (11) and an indium groove heating device, wherein the die base is provided with an indium inlet channel (21), the indium groove and the indium inlet channel are communicated through an indium pipeline (12), a pipeline heating device (13) is arranged outside the indium pipeline, and a valve (14) is arranged on the indium pipeline;
the binding method comprises the following steps:
firstly, roughening the target (3) and the back tube (7);
secondly, respectively carrying out metallization treatment on the target material and the back tube;
thirdly, uniformly coating a layer of soldering flux on the inner wall of the target material and the outer wall of the back tube at normal temperature after the treatment in the step two;
respectively assembling N sections of target materials to the outer side of the back pipe, wherein the value of N is 1-10, placing an internal heating device in the back pipe, placing the back pipe in a mold base, placing the target materials on the mold base, and placing the mold base and the internal heating pipe on a heating platform; an outer heating device is sleeved on the outer side of the target and positioned on a die base, the top end face of the target is tightly pressed through a target pressing block, an upper end cover is placed on the target pressing block, a back tube and the inner heating device, an indium overflow groove (6) is formed among the upper end cover, the target pressing block and the back tube, an indium overflow port (61) is further formed in the upper end cover at the indium overflow groove, a pressing rod is placed on the upper end cover, sealing rings are arranged between the die base and the back tube and between the target pressing block and the upper end cover, a welding seam space is formed between the back tube and the target, and the welding seam space is respectively communicated with an indium inlet channel;
after the coaxiality of N sections of target materials is well controlled, applying pressure through a pressure rod to tightly press an upper end cover, starting a heating platform, an inner heating device, an outer heating device, a pipeline heating device and an indium tank heating device to heat, opening a valve on an indium pipeline after the temperatures of the target materials and a back pipe reach preset temperatures, enabling indium liquid reaching the preset temperatures to be injected into a welding seam space formed by the back pipe and the target materials from an indium channel of a mold base, slowly rising the indium liquid until the indium liquid is full of an indium overflow groove, and closing the valve to stop injecting the indium;
and (VI) closing the heating platform, the inner heating device, the pipeline heating device and the indium tank heating device to stop heating, simultaneously controlling the outer heating device to gradually cool the target material, and closing the outer heating device to cool the target material to room temperature after the indium in the indium overflow tank is cooled and solidified.
2. The method of claim 1, wherein the step of bonding the target material comprises: and (iv) the external heating device is heating equipment with a sectional heating function, and in the step (six), the external heating device is controlled to cool the target material in sections according to the sequence from bottom to top.
3. The method according to claim 1 or 2, wherein the step of bonding the target material comprises: a pipeline heating device is arranged outside the indium pipeline, namely a flexible heating belt is wrapped outside the indium pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911025924.6A CN110804726A (en) | 2019-10-25 | 2019-10-25 | Binding method of rotary target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911025924.6A CN110804726A (en) | 2019-10-25 | 2019-10-25 | Binding method of rotary target material |
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| CN110804726A true CN110804726A (en) | 2020-02-18 |
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| CN201911025924.6A Withdrawn CN110804726A (en) | 2019-10-25 | 2019-10-25 | Binding method of rotary target material |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111299923A (en) * | 2020-03-30 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Temperature control device for welding tubular target and application thereof |
| CN111408864A (en) * | 2020-04-27 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
| CN111468799A (en) * | 2020-04-22 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Welding method of ceramic rotary target |
| CN111926296A (en) * | 2020-07-15 | 2020-11-13 | 先导薄膜材料（广东）有限公司 | Rotary target binding method |
| CN112458413A (en) * | 2020-10-23 | 2021-03-09 | 先导薄膜材料（广东）有限公司 | Target binding method |
| CN113215539A (en) * | 2021-04-19 | 2021-08-06 | 先导薄膜材料（广东）有限公司 | Binding method of aluminum rotary target material |
| CN113463044A (en) * | 2021-06-10 | 2021-10-01 | 芜湖映日科技股份有限公司 | Equipment for binding target material in vacuum |
| CN114481049A (en) * | 2021-12-24 | 2022-05-13 | 凯盛信息显示材料(洛阳)有限公司 | ITO rotary target binding device |
| CN114908323A (en) * | 2022-03-13 | 2022-08-16 | 先导薄膜材料（广东）有限公司 | Binding method of short cylinder |
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| EP1216772A2 (en) * | 2000-12-19 | 2002-06-26 | W.C. Heraeus GmbH & Co. KG | Method for producing a tubular sputtering target |
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| CN103620082A (en) * | 2011-04-29 | 2014-03-05 | 普莱克斯S.T.技术有限公司 | Method of forming a cylindrical sputter target assembly |
| CN105624627A (en) * | 2016-03-14 | 2016-06-01 | 无锡舒玛天科新能源技术有限公司 | Binding type magnetron sputtering rotary target material and preparation method thereof |
| CN206986276U (en) * | 2017-07-25 | 2018-02-09 | 洛阳罗伊机械有限公司 | A kind of rotary target binding device |
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2019
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1216772A2 (en) * | 2000-12-19 | 2002-06-26 | W.C. Heraeus GmbH & Co. KG | Method for producing a tubular sputtering target |
| CN102260847A (en) * | 2010-05-27 | 2011-11-30 | 苏州晶纯新材料有限公司 | Metal rotating target material with low melting point and production technology |
| CN103620082A (en) * | 2011-04-29 | 2014-03-05 | 普莱克斯S.T.技术有限公司 | Method of forming a cylindrical sputter target assembly |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111299923A (en) * | 2020-03-30 | 2020-06-19 | 宁波江丰电子材料股份有限公司 | Temperature control device for welding tubular target and application thereof |
| CN111299923B (en) * | 2020-03-30 | 2022-02-22 | 宁波江丰电子材料股份有限公司 | Temperature control device for welding tubular target and application thereof |
| CN111468799A (en) * | 2020-04-22 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Welding method of ceramic rotary target |
| CN111408864A (en) * | 2020-04-27 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
| CN111408864B (en) * | 2020-04-27 | 2022-01-11 | 宁波江丰电子材料股份有限公司 | Assembly method of rotary target material |
| CN111926296A (en) * | 2020-07-15 | 2020-11-13 | 先导薄膜材料（广东）有限公司 | Rotary target binding method |
| CN112458413A (en) * | 2020-10-23 | 2021-03-09 | 先导薄膜材料（广东）有限公司 | Target binding method |
| CN113215539B (en) * | 2021-04-19 | 2022-08-05 | 先导薄膜材料（广东）有限公司 | Binding method of aluminum rotary target material |
| CN113215539A (en) * | 2021-04-19 | 2021-08-06 | 先导薄膜材料（广东）有限公司 | Binding method of aluminum rotary target material |
| CN113463044A (en) * | 2021-06-10 | 2021-10-01 | 芜湖映日科技股份有限公司 | Equipment for binding target material in vacuum |
| CN113463044B (en) * | 2021-06-10 | 2023-02-03 | 芜湖映日科技股份有限公司 | Equipment for binding target material in vacuum |
| CN114481049A (en) * | 2021-12-24 | 2022-05-13 | 凯盛信息显示材料(洛阳)有限公司 | ITO rotary target binding device |
| CN114908323A (en) * | 2022-03-13 | 2022-08-16 | 先导薄膜材料（广东）有限公司 | Binding method of short cylinder |
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Application publication date: 20200218 |