CN110797134B - Composition for solar cell electrode and solar cell - Google Patents
Composition for solar cell electrode and solar cell Download PDFInfo
- Publication number
- CN110797134B CN110797134B CN201910492022.7A CN201910492022A CN110797134B CN 110797134 B CN110797134 B CN 110797134B CN 201910492022 A CN201910492022 A CN 201910492022A CN 110797134 B CN110797134 B CN 110797134B
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- solar cell
- glass frit
- electrode
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- 239000000203 mixture Substances 0.000 title claims abstract description 81
- 239000011521 glass Substances 0.000 claims abstract description 66
- 239000000843 powder Substances 0.000 claims abstract description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 33
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 33
- 239000010937 tungsten Substances 0.000 claims abstract description 33
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 32
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 18
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- -1 defoamers Substances 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000012963 UV stabilizer Substances 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007822 coupling agent Substances 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000004014 plasticizer Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000013008 thixotropic agent Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003513 alkali Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920000896 Ethulose Polymers 0.000 description 2
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 229920001748 polybutylene Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229940032007 methylethyl ketone Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention provides a composition for a solar cell electrode including an aluminum oxide layer, an electrode formed of the composition, and a solar cell including the electrode. The composition comprises: conductive powder, glass frit, and organic vehicle. The glass frit comprises lead, bismuth, tungsten and alkali metals, wherein tungsten is present in the glass frit in an amount of 0.1 to 7 wt% based on the oxide content, the alkali metal is present in the glass frit in an amount of 5 to 8 wt% based on the oxide content, and the weight ratio of the alkali metal to tungsten is 0.8 or greater than 0.8 based on the oxide content.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of korean patent application No. 10-2018-0090985, filed by the korean intellectual property office at 8/3 in 2018, the entire disclosure of which is incorporated herein by reference.
Technical Field
The present invention relates to a composition for a solar cell electrode including an aluminum oxide layer as a passivation layer, an electrode formed of the composition, and a solar cell including the electrode. More particularly, the present invention relates to a composition for an electrode of a solar cell, an electrode formed of the composition, and a solar cell including the electrode, wherein the composition includes a specific glass frit to reduce series resistance while improving conversion efficiency of the solar cell when forming an electrode in a solar cell including an aluminum oxide layer.
Background
Solar cells generate electricity by converting photons of sunlight into electricity using the photovoltaic effect of a PN junction (PN junction). In a solar cell, a front electrode and a rear electrode are formed on an upper surface and a lower surface of a semiconductor wafer or a substrate having a PN junction, respectively. Then, the photovoltaic effect of the PN junction is induced by sunlight entering the semiconductor wafer, and electrons generated by the photovoltaic effect of the PN junction supply an electric current to the outside via the electrode. An electrode of a solar cell is formed on a wafer by applying, patterning and baking a composition for a solar cell electrode.
Typical compositions for solar cell electrodes have limitations in reducing series resistance and improving the conversion efficiency of solar cells. In recent years, a technique of forming an aluminum oxide layer on the front surface of a solar cell has been developed to improve the processability and conversion efficiency of the solar cell.
Background art of the present invention is disclosed in unexamined Japanese patent publication No. 2015-144162.
Disclosure of Invention
An object of the present invention is to provide a composition for a solar cell electrode, which can reduce series resistance while improving conversion efficiency of a solar cell when forming an electrode in a solar cell including an aluminum oxide layer.
According to one aspect of the present invention, a composition for a solar cell electrode including an aluminum oxide layer includes: conductive powder, glass frit and organic carrier; the glass frit comprises lead, bismuth, tungsten and alkali metals, wherein tungsten is present in the glass frit in an amount of 0.1 to 7 wt% based on the oxide content, the alkali metal is present in the glass frit in an amount of 5 to 8 wt% based on the oxide content, and the weight ratio of the alkali metal to tungsten is 0.8 or greater than 0.8 based on the oxide content.
In some examples, lead may be present in the glass frit in an amount of 1 wt% to 30 wt% based on the oxide content, and bismuth may be present in the glass frit in an amount of 1 wt% to 25 wt% based on the oxide content.
In some examples, the alkali metal can be lithium.
In some examples, the glass frit may further comprise at least one metal or metal oxide selected from the group consisting of: boron (B), magnesium (Mg), tellurium (Te), phosphorus (P), gallium (Ga), cerium (Ce), iron (Fe), silicon (Si), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), aluminum (Al), zinc (Zn) and oxides thereof.
In some examples, the at least one metal or metal oxide may be present in the glass frit in an amount of 30 wt.% to 80 wt.% based on the oxide content.
In some examples, the glass frit may further include 10 to 60 wt.% tellurium, 0 to 30 wt.% or less than 30 wt.% zinc, and 0 to 10 wt.% or less than 10 wt.% molybdenum, based on the oxide content.
In some examples, the composition may include: 60 to 95 weight percent of the conductive powder; 0.1 to 20 wt% of the glass frit; and the balance of the organic vehicle.
In some examples, the composition may further comprise at least one additive selected from the group consisting of: dispersants, thixotropic agents, plasticizers, viscosity stabilizers, defoamers, pigments, uv stabilizers, antioxidants and coupling agents.
According to another aspect of the present invention, there is provided an electrode formed of the composition for a solar cell electrode according to the present invention.
According to still another aspect of the present invention, a solar cell includes: a wafer, an aluminum oxide layer formed on at least one surface of the wafer, and an electrode adjacent to the aluminum oxide layer, wherein the electrode is formed from the composition for a solar cell electrode according to the present invention.
The present invention provides a composition for a solar cell electrode, which can reduce series resistance while improving conversion efficiency of a solar cell when forming an electrode in a solar cell including an aluminum oxide layer.
Drawings
Fig. 1 is a schematic cross-sectional view of a solar cell according to an example of the present invention.
[ description of reference numerals ]
10: front electrode
20: wafer with a plurality of chips
30: silicon oxide layer
32: silicon nitride layer
34: alumina layer
40: rear electrode
Detailed Description
In the present application, the term "X to Y" indicates "X or greater than X to Y or less than Y" or ". gtoreq.X and. ltoreq.Y".
One aspect of the present invention relates to a composition for a solar cell electrode, which is used to form an electrode of a solar cell including an aluminum oxide layer and includes, a conductive powder, a glass frit, and an organic vehicle; the glass frit comprises lead, bismuth, tungsten and alkali metals, wherein tungsten is present in the glass frit in an amount of 0.1 to 7 wt% by weight based on the oxide content, the alkali metal is present in the glass frit in an amount of 5 to 8 wt% by weight based on the oxide content, and the weight ratio of the alkali metal to tungsten is 0.8 or greater than 0.8 based on the oxide content. Within these ranges, the composition may reduce series resistance while improving conversion efficiency of a solar cell when forming an electrode in a solar cell including an aluminum oxide layer.
In the present specification, "alumina" may be Al2O3But is not limited thereto.
The composition for a solar cell electrode according to the present invention may be used to form a front electrode or a rear electrode of a solar cell including an aluminum oxide layer as an electrode adjacent to the aluminum oxide layer, but is not limited thereto.
Now, each component of the composition for a solar cell electrode according to the present invention will be described in more detail.
Conductive powder
The conductive powder may include silver (Ag) powder. The silver powder may have a nano-scale particle size or a micro-scale particle size. For example, the silver powder may have an average particle diameter of several tens of nanometers to several hundreds of nanometers or an average particle diameter of several micrometers to several tens of micrometers. Alternatively, the silver powder may be a mixture of two or more silver powders having different particle size sizes.
In another example, the following materials may be used as the conductive powder instead of silver (Ag) powder: gold (Au) powder, palladium (Pd) powder, platinum (Pt) powder, copper (Cu) powder, chromium (Cr) powder, cobalt (Co) powder, aluminum (Al) powder, tin (Sn) powder, lead (Pb) powder, zinc (Zn) powder, iron (Fe) powder, iridium (Ir) powder, osmium (Os) powder, rhodium (Rh) powder, tungsten (W) powder, molybdenum (Mo) powder, and nickel (Ni) powder.
The aforementioned metal powders may be used alone or in the form of a mixture or an alloy. Preferably, silver powder is used as the conductive powder.
The conductive powder may have various particle shapes such as a spherical shape, a flake shape, or an unfixed shape, without limitation.
The conductive powder may have an average particle diameter (D50) of 0.1 μm to 10 μm, specifically 0.5 μm to 5 μm, for example, 0.1 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm. Within this range, the composition can reduce series resistance and contact resistance. Here, after dispersing the conductive powder in isopropyl alcohol (IPA) at 25 ℃ for 3 minutes by ultrasonic wave, the average particle diameter (D50) was measured using a particle diameter analyzer (model 1064LD, CILAS co., Ltd.).
The conductive powder may be present in an amount of 60 to 95 wt% based on the total weight of the composition for a solar cell electrode. Within this range, the composition can improve the conversion efficiency of the solar cell while being easily prepared in the form of a paste. Preferably, the conductive powder is present in an amount of 70 wt% to 90 wt%, such as 60 wt%, 61 wt%, 62 wt%, 63 wt%, 64 wt%, 65 wt%, 66 wt%, 67 wt%, 68 wt%, 69 wt%, 70 wt%, 71 wt%, 72 wt%, 73 wt%, 74 wt%, 75 wt%, 76 wt%, 77 wt%, 78 wt%, 79 wt%, 80 wt%, 81 wt%, 82 wt%, 83 wt%, 84 wt%, 85 wt%, 86 wt%, 87 wt%, 88 wt%, 89 wt%, 90 wt%, 91 wt%, 92 wt%, 93 wt%, 94 wt%, or 95 wt%, based on the total weight of the composition for the solar cell electrode.
Glass frit
The baking process stage of the composition of the glass frit acting on the solar cell electrode etches the anti-reflection layer and melts the conductive powder to form grains of the conductive powder in the emitter region. In addition, the glass frit improves the adhesion of the conductive powder to the wafer and is softened during the baking process to lower the baking temperature.
The glass frit comprises lead, bismuth, tungsten and alkali metals, wherein tungsten is present in the glass frit in an amount of 0.1 to 7 wt% based on the oxide content, the alkali metal is present in the glass frit in an amount of 5 to 8 wt% based on the oxide content, and the weight ratio of the alkali metal to tungsten is 0.8 or greater than 0.8 based on the oxide content. When the contents of tungsten and the alkali metal and the weight ratio of the alkali metal to tungsten are within the aforementioned ranges, an electrode formed from the composition may provide reduced series resistance when used in a solar cell including an aluminum oxide layer, thereby improving solar cell conversion efficiency.
Lead may be present in the glass frit in an amount of 1 to 30 wt%, specifically 5 to 30 wt%, such as 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, or 30 wt% in terms of oxide content. Within this range, the composition can be baked at a low temperature.
Bismuth may be present in the glass frit in an amount of 1 to 25 wt.%, specifically 5 to 20 wt.%, such as 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, or 25 wt.%, in terms of oxide content. Within this range, an electrode formed from the composition may have improved adhesion to a ribbon (ribbon).
Tungsten may be present in the frit in an amount of 0.1 to 7 wt%, specifically 1 to 6 wt%, such as 0.1 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, or 7 wt%, based on the oxide content. Within this range, the weight ratio of the alkali metal to tungsten mentioned earlier herein can be easily satisfied, and an electrode formed from the composition can provide reduced series resistance even when adjacent to an aluminum oxide layer, thereby improving solar cell efficiency.
The alkali metal may include at least one of lithium (Li), sodium (Na), and potassium (K). Preferably, lithium is used as the alkali metal to facilitate the preparation of the frit. The alkali metal may be present in the glass frit in an amount of 5 to 8 wt%, specifically 5 to 7 wt%, such as 5, 6, 7 or 8 wt%, based on the oxide content. Within this range, the weight ratio of the alkali metal to tungsten mentioned earlier herein can be easily satisfied, and an electrode formed from the composition can provide reduced series resistance even when adjacent to an aluminum oxide layer, thereby improving solar cell efficiency.
In the glass frit, the weight ratio of alkali metal to tungsten may be 0.8 or greater than 0.8 in terms of oxide content. Within this range, an electrode formed from the composition can provide reduced series resistance even when adjacent to an aluminum oxide layer, thereby improving solar cell efficiency. Preferably, the weight ratio of alkali metal to tungsten is from 0.8 to 7, more preferably from 0.8 to 5, such as 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, 3, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, 5, 5.1, 5.2, 5.3, 5.4, 5.5, 5.6, 6, 6.6, 6, 4, 6, 4, 6, 4, 4.1, 6, 4, 4.1, 4, 6, 4.1, 6, 4.1, 4, 4.1, 6, 4, 6, 4.1, 4, 4.1, 6, 4.1, or 5.1, 4.1.
The glass frit may further include a metal and/or a metal oxide in addition to lead, bismuth, tungsten, and alkali metals. For example, the glass frit may include at least one metal or metal oxide selected from the group consisting of: boron (B), magnesium (Mg), tellurium (Te), phosphorus (P), gallium (Ga), cerium (Ce), iron (Fe), silicon (Si), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), aluminum (Al), zinc (Zn) and oxides thereof.
Here, there may be present in the frit from 30 to 80 wt.%, specifically from 50 to 75 wt.%, for example 30 wt.%, 31 wt.%, 32 wt.%, 33 wt.%, 34 wt.%, 35 wt.%, 36 wt.%, 37 wt.%, 38 wt.%, 39 wt.%, 40 wt.%, 41 wt.%, 42 wt.%, 43 wt.%, 44 wt.%, 45 wt.%, 46 wt.%, 47 wt.%, 48 wt.%, 49 wt.%, 50 wt.%, 51 wt.%, 52 wt.%, 53 wt.%, 54 wt.%, 55 wt.%, 56 wt.%, 57 wt.%, 58 wt.%, 59 wt.%, 60 wt.%, 61 wt.%, 62 wt.%, 63 wt.%, 64 wt.%, 65 wt.%, 66 wt.%, 67 wt.%, 68 wt.%, 69 wt.%, 70 wt.%, 71 wt.%, based on the oxide content, A metal in an amount of 72 wt.%, 73 wt.%, 74 wt.%, 75 wt.%, 76 wt.%, 77 wt.%, 78 wt.%, 79 wt.%, or 80 wt.%. Within this range, the metal can improve the solar cell efficiency without changing the role of lead, bismuth, tungsten and alkali metals.
In one example, from 10 wt% to 60 wt%, specifically from 20 wt% to 60 wt%, such as 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 21 wt%, 22 wt%, 23 wt%, 24 wt%, 25 wt%, 26 wt%, 27 wt%, 28 wt%, 29 wt%, 30 wt%, 31 wt%, 32 wt%, 33 wt%, 34 wt%, 35 wt%, 36 wt%, 37 wt%, 38 wt%, 39 wt%, 40 wt%, 41 wt%, 42 wt%, 43 wt%, 44 wt%, 45 wt%, 46 wt%, 47 wt%, 48 wt%, 49 wt%, 50 wt%, 51 wt%, based on the oxide content, may be present in the frit, Tellurium in an amount of 52 wt.%, 53 wt.%, 54 wt.%, 55 wt.%, 56 wt.%, 57 wt.%, 58 wt.%, 59 wt.%, or 60 wt.%. Within this range, the glass frit can be easily prepared, while the electrode formed from the composition may exhibit improved properties in terms of resistance.
In one example, zinc can be present in the glass frit in an amount of 0 wt% to 30 wt%, specifically 1 wt% to 30 wt%, more specifically 10 wt% to 20 wt%, such as 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 21 wt%, 22 wt%, 23 wt%, 24 wt%, 25 wt%, 26 wt%, 27 wt%, 28 wt%, 29 wt%, or 30 wt%, based on the oxide content. Within this range, the electrode formed from the composition may exhibit improved properties in terms of electrical resistance.
In one example, molybdenum may be present in the glass frit in an amount of 0 wt% to 10 wt%, specifically 0.1 wt% to 5 wt%, such as 0 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, or 10 wt%, based on the oxide content. Within this range, the etching of the resist oxide film can be easily controlled.
In one example, magnesium may be present in the glass frit in an amount of 10 wt.% or less than 10 wt.%, specifically 0.1 wt.% to 10 wt.%, or 0.1 wt.% to 5 wt.%, such as 0 wt.%, 0.1 wt.%, 0.5 wt.%, 1 wt.%, 2 wt.%, 3 wt.%, 4 wt.%, 5 wt.%, 6 wt.%, 7 wt.%, 8 wt.%, 9 wt.%, or 10 wt.%, based on the oxide content. Within this range, the electrode formed from the composition may exhibit improved properties in electrical resistance and adhesion to the tape.
In one example, the glass frit may be a Pb-Bi-W-alkali-Te-Mg based glass frit including lead, bismuth, tungsten, alkali metals, tellurium, and magnesium. The Pb-Bi-W-alkali-Te-Mg series glass frit may include 1 to 30 wt% of lead, 1 to 25 wt% of bismuth, 0.1 to 7 wt% of tungsten, 5 to 8 wt% of alkali, 10 to 60 wt% of tellurium, and 0.1 to 10 wt% of magnesium, in terms of oxide content. Within this range, an electrode formed from the composition may provide reduced series resistance when used in a solar cell including an aluminum oxide layer, thereby improving solar cell efficiency.
In another example, the glass frit may be a Pb-Bi-W-alkali-Te-Mg-Zn series glass frit including lead, bismuth, tungsten, alkali metals, tellurium, magnesium, and zinc. The Pb-Bi-W-alkali-Te-Mg-Zn-based glass frit may include 1 to 30% by weight of lead, 1 to 25% by weight of bismuth, 0.1 to 7% by weight of tungsten, 5 to 8% by weight of alkali, 10 to 60% by weight of tellurium, 0.1 to 10% by weight of magnesium, and 1 to 30% by weight of zinc, in terms of oxide content. Within this range, an electrode formed from the composition may provide reduced series resistance when used in a solar cell including an aluminum oxide layer, thereby improving solar cell efficiency.
In yet another example, the glass frit may be a Pb-Bi-W-alkali-Te-Mg-Mo based glass frit including lead, bismuth, tungsten, alkali metals, tellurium, magnesium, and molybdenum. The Pb-Bi-W-alkali-Te-Mg-Mo-based glass frit may include 1 to 30 wt% of lead, 1 to 25 wt% of bismuth, 0.1 to 7 wt% of tungsten, 5 to 8 wt% of alkali, 10 to 60 wt% of tellurium, 0.1 to 10 wt% of magnesium, and 0.1 to 5 wt% of molybdenum, in terms of oxide content. Within this range, an electrode formed from the composition may provide reduced series resistance when used in a solar cell including an aluminum oxide layer, thereby improving solar cell efficiency.
In yet another example, the glass frit may be a Pb-Bi-W-alkali-Te-Mg-Mo-Zn-based glass frit including lead, bismuth, tungsten, alkali metals, tellurium, magnesium, molybdenum, and zinc. The Pb-Bi-W-alkali-Te-Mg-Mo-Zn-based glass frit may include 1 to 30% by weight of lead, 1 to 25% by weight of bismuth, 0.1 to 7% by weight of tungsten, 5 to 8% by weight of alkali, 10 to 60% by weight of tellurium, 0.1 to 10% by weight of magnesium, 0.1 to 5% by weight of molybdenum, and 1 to 30% by weight of zinc, in terms of oxide content. Within this range, an electrode formed from the composition may provide reduced series resistance when used in a solar cell including an aluminum oxide layer, thereby improving solar cell efficiency.
The shape and size of the frit are not particularly limited. For example, the frit may have an average particle size (D50) of 0.1 μm to 10 μm. The particle shape of the frit may be spherical or unfixed. Here, the average particle diameter (D50) may be measured using a particle diameter analyzer (model 1064LD, CILAS co., Ltd.) after dispersing glass frit powder in isopropyl alcohol (IPA) at 25 ℃ for 3 minutes by ultrasonic wave. Preferably, the frit has an average particle size (D50) of 0.5 μm to 10 μm, more preferably 0.5 μm to 2.0 μm, such as 0.1 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm.
The glass frit can be prepared by any suitable method known in the art using lead oxide, bismuth oxide, tungsten oxide, and alkali metal oxides and metal and/or metal oxides. For example, the glass frit can be prepared by: lead oxide, bismuth oxide, tungsten oxide and alkali metal oxides and metals and/or metal oxides are mixed using a ball mill or a planetary mill, the mixture is melted at about 800 to 1300 ℃, and the melted mixture is quenched to 25 ℃, and then the obtained product is pulverized using a disc mill, a planetary mill, or the like.
The glass frit may be present in an amount of 0.1 to 20 wt%, specifically 0.5 to 10 wt%, 0.8 to 5 wt%, such as 0.1 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, or 20 wt%, based on the total weight of the composition for a solar cell electrode. Within this range, the electrode formed from the composition may exhibit good properties in terms of series resistance, open circuit voltage, and short circuit current, thereby improving solar cell efficiency while having good electrical properties and improved adhesion.
Organic vehicle
The organic vehicle imparts suitable viscosity and rheological properties suitable for printing to the composition for solar cell electrodes by mechanical mixing with the inorganic components of the composition.
The organic vehicle may be any typical organic vehicle used in a composition for a solar cell electrode, and may generally include a binder resin, a solvent, and the like.
The binder resin may be selected from acrylate resins or cellulose resins. Ethyl cellulose is generally used as the binder resin. In addition, the binder resin may be ethyl hydroxyethyl cellulose (ethylhydroxyethyl cellulose), nitrocellulose (nitrocellulose), a blend of ethylcellulose and phenol resin (phenol resin), alkyd resin (alkyl resin), phenol resin (phenol resin), acrylate resin (acrylate resin), xylene resin (xylene resin), polybutylene resin (polybutylene resin), polyester resin (polyester resin), urea resin (urea resin), melamine resin (melamine resin), vinyl acetate resin (vinyl acetate resin), wood rosin (wood rosin), or polymethacrylate of alcohol (polymethacrylate of alcohol), and the like.
The solvent may be, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methyl ethyl ketone, benzyl alcohol, γ -butyrolactone, and ethyl lactate. These solvents may be used alone or in the form of a mixture of two or more thereof.
The composition for a solar cell electrode may include a balance of an organic vehicle. Preferably, the organic carrier is present in an amount of 1 to 30 wt%, such as 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, 21 wt%, 22 wt%, 23 wt%, 24 wt%, 25 wt%, 26 wt%, 27 wt%, 28 wt%, 29 wt%, or 30 wt%, based on the total weight of the composition for the solar cell electrode. Within this range, the organic vehicle may provide sufficient adhesive strength and good printability to the composition.
Additive agent
The composition for a solar cell electrode according to the present invention may further include any typical additive to enhance fluidity, processability and stability, if necessary. The additives may include dispersants, thixotropic agents, plasticizers, viscosity stabilizers, antifoaming agents, pigments, uv stabilizers, antioxidants, coupling agents, and the like. These additives may be used alone or in a mixture. Additives may be present in an amount of 0.1 wt% to 5 wt%, for example, 0.1 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, or 5 wt%, based on the total weight of the composition for a solar cell electrode, but the content of the additives may be changed as needed.
Solar cell electrode and solar cell including the same
Other aspects of the present invention relate to an electrode formed of the composition for a solar cell electrode and a solar cell including the same.
The solar cell according to the present invention includes: a wafer, an aluminum oxide layer formed on at least one surface of the wafer, and an electrode adjacent to the aluminum oxide layer, wherein the electrode is formed from the composition for a solar cell electrode according to the present invention. For example, the solar cell according to the present invention may include a solar cell having a Passivated Emitter and Rear Cell (PERC) structure, but is not limited thereto. The composition for a solar cell electrode according to the present invention can be used to form a front electrode or a rear electrode, preferably a front electrode formed on a light-receiving surface of a solar cell.
Fig. 1 is a schematic cross-sectional view of a solar cell according to an example of the present invention.
Referring to fig. 1, the solar cell according to the present example may include a wafer 20, the wafer 20 including a p layer (or an n layer) and an n layer (or a p layer) as an emitter.
The upper surface of the wafer 20 corresponds to the front side of the solar cell. On the upper surface of the wafer 20, a silicon oxide layer 30, a silicon nitride layer 32, and an aluminum oxide layer 34 are sequentially formed. A front electrode 10 is formed on the upper surface of the wafer 20 to adjoin the silicon oxide layer 30, the silicon nitride layer 32 and the aluminum oxide layer 34. The front electrode 10 may be formed of the composition for a solar cell electrode according to the present invention.
Although the silicon oxide layer 30, the silicon nitride layer 32, and the aluminum oxide layer 34 are shown in fig. 1 as being formed on the upper surface of the wafer 20 in this order, it is to be understood that the present invention is not limited thereto, and the stacking order of these layers may be changed as needed. For example, a silicon oxide layer 30, an aluminum oxide layer 34, and a silicon nitride layer 32 may be stacked in this order on the upper surface of the wafer 20.
The lower surface of the wafer 20 corresponds to the rear side of the solar cell, and the rear electrode 40 is formed on the lower surface of the wafer 20.
Although not shown in fig. 1, at least one of the silicon oxide layer 30, the silicon nitride layer 32, and the aluminum oxide layer 34 may have a textured structure.
In addition, although not shown in fig. 1, at least one of the silicon oxide layer 30, the silicon nitride layer 32, and the aluminum oxide layer 34 may be further formed on the lower surface of the wafer 20 to adjoin the back electrode 40.
For example, the preliminary process of preparing the front electrode 10 may be performed by: the composition for a solar cell electrode is deposited on the front surface of the wafer 20 by printing and then dried at about 200 to about 400 c for about 10 to 60 seconds. The dried composition may then be subjected to baking at 400 ℃ to 950 ℃, preferably 600 ℃ to 850 ℃, for about 30 seconds to 210 seconds to prepare the front electrode 10.
Next, the present invention will be explained in more detail with reference to examples. It should be noted, however, that these examples are provided for illustration only and should not be construed as limiting the invention in any way.
Table 1 shows the composition details of the glass frits used in the examples and comparative examples. Each frit was prepared by: the metal oxides in different combinations according to those listed in Table 1 were mixed in amounts (unit: parts by weight) of the respective ingredients listed in Table 1, the resultant glass frit was melted at 800 ℃ to 1300 ℃ and the molten composition was quenched to 25 ℃ and then the resultant product was pulverized by a disc mill or the like.
TABLE 1
| PbO | Bi2O3 | TeO2 | Li2O | ZnO | WO3 | MoO3 | MgO | B2O3 | Total of | Weight ratio of | |
| A | 5.5 | 19.3 | 46.2 | 6.9 | 15.5 | 5.8 | 0 | 0.8 | 0 | 100 | 1.19 |
| B | 14.3 | 5.3 | 56.3 | 6.5 | 11.7 | 4.5 | 0.8 | 0.6 | 0 | 100 | 1.44 |
| C | 14.7 | 5.5 | 52.3 | 6.7 | 14.8 | 4.6 | 0.8 | 0.6 | 0 | 100 | 1.46 |
| D | 13.5 | 14.2 | 51.8 | 6.2 | 11.0 | 1.5 | 1.4 | 0.4 | 0 | 100 | 4.13 |
| E | 14.3 | 5.3 | 58.4 | 6.6 | 11.7 | 1.6 | 1.8 | 0.3 | 0 | 100 | 4.13 |
| F | 28.4 | 5.0 | 42.3 | 5.6 | 13.5 | 4.2 | 0.7 | 0.3 | 0 | 100 | 1.33 |
| G | 26.9 | 13.4 | 37.1 | 5.2 | 12.8 | 4.0 | 0.3 | 0.3 | 0 | 100 | 1.3 |
| H | 27.4 | 13.6 | 39.5 | 5.9 | 10.6 | 1.4 | 1.2 | 0.4 | 0 | 100 | 4.21 |
| I | 27.7 | 5.3 | 42.0 | 6.6 | 14.6 | 1.6 | 1.9 | 0.3 | 0 | 100 | 4.13 |
| J | 32.5 | 17.3 | 33.9 | 2.2 | 0 | 11.2 | 1.0 | 1.9 | 0 | 100 | 0.20 |
| K | 32.5 | 17.3 | 35.9 | 2.2 | 0 | 9.2 | 1.0 | 1.9 | 0 | 100 | 0.24 |
| L | 32.5 | 17.3 | 37.9 | 2.2 | 0 | 7.2 | 1.0 | 1.9 | 0 | 100 | 0.31 |
| M | 0 | 4.0 | 54.6 | 7.9 | 13.0 | 10.3 | 0 | 2.4 | 7.8 | 100 | 0.77 |
| N | 13.4 | 5.7 | 59.4 | 6.5 | 11.7 | 0 | 2.9 | 0.4 | 0 | 100 | - |
| O | 26.6 | 9.4 | 41.7 | 1.0 | 12.6 | 8 | 0.3 | 0.4 | 0 | 100 | 0.125 |
| P | 15.3 | 6.3 | 56.3 | 4.0 | 11.7 | 5.0 | 0.8 | 0.6 | 0 | 100 | 0.8 |
| Q | 14.2 | 5.3 | 48.3 | 9.0 | 10.2 | 11.3 | 1.4 | 0.3 | 0 | 100 | 0.8 |
The weight ratio is as follows: weight ratio of lithium oxide to tungsten oxide
Example 1
As an organic binder, 2.0 parts by weight of ethyl cellulose (STD4, Dow Chemical Company) was sufficiently dissolved in 6.75 parts by weight of terpineol at 60 ℃, and then 90.0 parts by weight of spherical silver powder (AG-4-8, Dowa Hightech co., Ltd.) having an average particle diameter of 2.0 μm and 1.25 parts by weight of glass frit a shown in table 1 were added to the binder solution, followed by mixing and kneading in 3 rolls (3-roll kneader), thereby preparing a composition for a solar cell electrode.
Examples 2 to 9
Compositions for solar cell electrodes were prepared in the same manner as in example 1, except that the kind of glass frit used was changed as listed in table 2.
Comparative examples 1 to 8
Compositions for solar cell electrodes were prepared in the same manner as in example 1, except that the kind of glass frit used was changed as listed in table 2.
Fabrication and evaluation of solar cells
Solar cells were fabricated using each of the compositions prepared in examples and comparative examples, and then evaluated as described below, with the results shown in table 2.
Each of the compositions for solar cell electrodes prepared in examples and comparative examples was deposited on a wafer by screen printing in a predetermined pattern and then dried at 300 ℃ for 1 minute in an infrared drying oven (POCl was formed on the textured surface by texturing the front surface of a p-type wafer doped with boron (B)3N of (A) to (B)+Layer of and in n+A single crystal wafer prepared by sequentially forming an aluminum oxide layer and a silicon oxide layer on the layers). Next, aluminum paste was printed on the rear surface of the wafer and dried in the same manner as described above, thereby forming finger electrodes and bus electrode patterns. The cell formed according to this procedure was baked at 800 ℃ for 50 seconds in a ribbon-type (belt-type) baking oven, thereby fabricating a solar cell.
The fabricated solar cell was evaluated in terms of short-circuit current (Isc, unit: a), open-circuit voltage (Voc, unit: mV), series resistance (Rs, unit: m Ω), conversion efficiency (Eff, unit:%) and fill factor (FF, unit:%) using an h.a.l.m. solar cell performance tester.
TABLE 2
| Glass frit | Isc | Voc | Rs | FF | Eff | |
| Example 1 | A | 9.695 | 661.4 | 3.00 | 78.3 | 20.7 |
| Example 2 | B | 9.691 | 660.5 | 2.84 | 77.7 | 20.5 |
| Example 3 | C | 9.692 | 661.3 | 3.09 | 79.0 | 20.8 |
| Example 4 | D | 9.702 | 660.1 | 2.98 | 78.0 | 20.6 |
| Example 5 | E | 9.698 | 661.6 | 3.05 | 77.6 | 20.5 |
| Example 6 | F | 9.707 | 662.6 | 3.08 | 78.0 | 20.7 |
| Example 7 | G | 9.694 | 660.8 | 2.96 | 78.2 | 20.6 |
| Example 8 | H | 9.710 | 661.4 | 2.99 | 78.1 | 20.6 |
| Example 9 | I | 9.703 | 661.1 | 3.03 | 77.6 | 20.5 |
| Comparative example 1 | J | 9.705 | 657.9 | 8.53 | 68.2 | 17.9 |
| Comparative example 2 | K | 9.710 | 656.3 | 10.19 | 64.8 | 17.0 |
| Comparative example 3 | L | 9.691 | 647.5 | 11.90 | 66.2 | 17.1 |
| Comparative example 4 | M | 9.699 | 657.2 | 14.43 | 59.0 | 15.5 |
| Comparative example 5 | N | 9.72 | 654.1 | 9.13 | 64.3 | 16.8 |
| Comparative example 6 | O | 9.78 | 652.6 | 9.37 | 62.9 | 16.5 |
| Comparative example 7 | P | 9.86 | 655.4 | 7.96 | 64.5 | 17.1 |
| Comparative example 8 | Q | 9.62 | 656.4 | 9.65 | 62.6 | 16.3 |
As shown in table 2, it can be seen that the electrode formed from the composition for a solar cell electrode according to the present invention can exhibit reduced series resistance when forming an electrode of a solar cell including an aluminum oxide layer, while improving the conversion efficiency of the solar cell.
It is to be understood that various modifications, alterations, permutations and equivalent examples may be made by those skilled in the art without departing from the spirit and scope of the present invention.
Claims (8)
1. A composition for a solar cell electrode comprising an aluminum oxide layer, the composition comprising: conductive powder, glass frit, and an organic vehicle,
the glass frit consists of lead, bismuth, tungsten and alkali metals, and optionally comprises one or more metals or metal oxides from the group consisting of: boron, magnesium, tellurium, phosphorus, gallium, cerium, iron, silicon, cesium, strontium, molybdenum, titanium, tin, indium, vanadium, barium, nickel, copper, sodium, potassium, arsenic, cobalt, zirconium, manganese, aluminum, zinc and oxides thereof,
wherein tungsten is present in the glass frit in an amount of 0.1 to 7 wt.% in terms of oxide content, the alkali metal is present in the glass frit in an amount of 5 to 8 wt.% in terms of oxide content, and the weight ratio of alkali metal to tungsten is 0.8 or greater than 0.8 in terms of oxide content.
2. The composition of claim 1, wherein lead is present in the glass frit in an amount of 1 to 30 wt.% based on the oxide content and bismuth is present in the glass frit in an amount of 1 to 25 wt.% based on the oxide content.
3. The composition of claim 1, wherein the alkali metal is lithium.
4. The composition of claim 1, wherein the one metal or metal oxide is present in the glass frit in an amount of 30 wt.% to 80 wt.% on an oxide content basis.
5. The composition of claim 1, wherein the glass frit comprises 10 to 60 wt.% tellurium, 0 to 30 wt.% or less than 30 wt.% zinc, and 0 to 10 wt.% or less than 10 wt.% molybdenum, on an oxide content basis.
6. The composition of claim 1, comprising: 60 to 95 weight percent of the conductive powder; 0.1 to 20 wt% of the glass frit; and the balance of the organic vehicle.
7. The composition of claim 1, further comprising: at least one additive selected from the group consisting of: dispersants, thixotropic agents, plasticizers, viscosity stabilizers, defoamers, pigments, uv stabilizers, antioxidants and coupling agents.
8. A solar cell, comprising: a wafer, an aluminum oxide layer formed on at least one surface of the wafer, and an electrode adjacent to the aluminum oxide layer, wherein the electrode is formed of the composition for a solar cell electrode according to any one of claims 1 to 7.
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| KR10-2018-0090985 | 2018-08-03 | ||
| KR1020180090985A KR20200015318A (en) | 2018-08-03 | 2018-08-03 | Composition for forming electrode for solar cell including aluminum oxide layer, electrode prepared using the same and solar cell comprising electrode prepared using the same |
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| KR20140103233A (en) * | 2013-02-15 | 2014-08-26 | 제일모직주식회사 | The composition for forming solar cell electrode comprising the same, and electrode prepared using the same |
| CN104715804A (en) * | 2013-12-17 | 2015-06-17 | 三星Sdi株式会社 | Composition for solar cell electrodes and electrode fabricated using the same |
| CN105051830A (en) * | 2013-03-27 | 2015-11-11 | 第一毛织株式会社 | Composition for forming solar cell electrode and electrode produced from same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20140103233A (en) * | 2013-02-15 | 2014-08-26 | 제일모직주식회사 | The composition for forming solar cell electrode comprising the same, and electrode prepared using the same |
| CN105051830A (en) * | 2013-03-27 | 2015-11-11 | 第一毛织株式会社 | Composition for forming solar cell electrode and electrode produced from same |
| CN104715804A (en) * | 2013-12-17 | 2015-06-17 | 三星Sdi株式会社 | Composition for solar cell electrodes and electrode fabricated using the same |
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| CN110797134A (en) | 2020-02-14 |
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