CN110783442B - 制造发光二极管显示器的方法 - Google Patents
制造发光二极管显示器的方法 Download PDFInfo
- Publication number
- CN110783442B CN110783442B CN201910380245.4A CN201910380245A CN110783442B CN 110783442 B CN110783442 B CN 110783442B CN 201910380245 A CN201910380245 A CN 201910380245A CN 110783442 B CN110783442 B CN 110783442B
- Authority
- CN
- China
- Prior art keywords
- circuit board
- led
- shaped
- key
- piano key
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000000155 melt Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Abstract
一种用于制造发光二极管(LED)显示器的方法,包括提供其上设置有琴键形孔的模板,将琴键形LED放置到模板上,操纵琴键形LED,使得每个琴键形LED装配在模板上的相应琴键形孔内,并将琴键形LED转移到电路板上。
Description
技术领域
本公开涉及制造一种以特定配置定向LED的发光二极管(LED)显示器。
背景技术
LED显示器,包括在大型柔性电路板上的LED或小型LED或微型LED矩阵的柔性LED显示器,在需要动态照明和成像的各种应用中是有用的。这些LED显示器包括非常大量(每个显示器区域2k+)的LED,这些LED必须以特定方向和位置连接到电路板,使得每个LED均连接到电源和控制器。传统上,这些LED显示器是使用“拾取和放置”自动化方法制造的,其中每个单独的LED被拾取并放置在电路板上。
传统方法虽然能有效达到预期目的,但在本领域中仍需要一种制造LED显示器的方法,该方法比传统的“拾取和放置”方法更简单、更快速、更具成本效率,并具与传统方法类似的可靠性。
发明内容
根据若干方面,一种用于制造发光二极管(LED)显示器的方法,包括提供设置有琴键形孔的模板,将琴键形LED沉积到模板中并操纵琴键形LED,使得每个琴键形LED装配在模板上相应的琴键形孔内,并将琴键形LED转移到电路板上。
一方面,琴键形LED包括琴键形特征部,该琴键形特征部与形成在模板上琴键形孔中的琴键形状配合,以使琴键形LED在特定方向上对准。
另一方面,电路板包括具有交替的阴极条涂层和阳极条涂层的分隔透明导电膜的基板。
另一方面,分隔透明导电膜具有氧化铟锡层、FTO层或其他导电涂层。
另一方面,琴键形LED的特定方向使得琴键形LED上的阴极触点与阴极条对准,并使琴键形LED上的阳极触点与阳极条对准。
另一方面,琴键形LED包括在每个阴极触点和阳极触点处的预锡沉积物。
另一方面,将琴键形LED转移到电路板上包括将电路板与模板对准,向电路板和模板施加压力,以及加热电路板和模板,使得预锡沉积物熔化在电路板上以将琴键形LED结合到电路板上。
另一方面,将琴键形LED转移到电路板上包括将电路板与模板对准,在琴键形LED的每个阴极触点和阳极触点处施加预锡沉积物,向电路板和模板施加压力,以及加热电路板和模板,使得预锡沉积物熔化到电路板上。
另一方面,将琴键形LED转移到电路板上包括将电路板与模板对准,并将焊膏施加于阴极触点和阳极触点以及电路板上。
另一方面,电路板是透明导电膜上的蚀刻或印刷电路。
另一方面,琴键形LED的特定方向使琴键形LED上的阴极触点与蚀刻或印刷电路对准,并使琴键形LED上的阳极触点与蚀刻或印刷电路对准,以通过琴键形LED形成完整的电路。
另一方面,琴键形LED包括在每个阴极触点和阳极触点处的预锡沉积物,并且将琴键形LED转移到电路板上包括将电路板与模板对准,向电路板和模板施加压力,以及加热电路板和模板,使得预锡沉积物熔化到电路板上。
另一方面,将琴键形LED转移到电路板上包括将电路板与模板对准,在琴键形LED的每个阴极触点和阳极触点处施加预锡沉积物,向电路板和模板施加压力,以及加热电路板和模板,使得预锡沉积物熔化到电路板上。
另一方面,将琴键形LED转移到电路板上包括将电路板与模板对准,并将阴极触点和阳极触点焊接于电路板。
另一方面,模板是柔性模板,并且电路板是柔性电路板。
另一方面,将琴键形LED沉积在模板上包括将琴键形LED放置在模板上方的料斗中,并搅动料斗中的LED使得其落到模板上。
另一方面,操纵琴键形LED使得每个琴键形LED装配在模板上对应琴键形孔内,其中包括刷或扫过模板上的琴键形LED,从而使得每个琴键形LED移动以装配于琴键形孔内,并且移除多余的琴键形LED。
根据若干其他方面,一种用于制造发光二极管(LED)显示器的方法,包括:提供设置有孔的模板,每个孔具有形成在其中的琴键形元件;提供LED,每个LED具有琴键形特征部,该琴键形特征部的尺寸适于装配在模板上孔的琴键形元件内;将LED沉积在模板上;操纵LED使得每个LED基于装配在孔中琴键形元件内的LED琴键形特征部以特定方向装配在模板上相应孔内;并将琴键形LED转移到电路板上。
一方面,提供LED包括为每个LED提供容纳灯元件的外壳、与灯元件连接的阳极触点、与灯元件连接的阴极触点,以及设置在灯元件上方的透镜,其中琴键形特征部形成在外壳或透镜中,使得LED至少有一个轴线不对称。
根据若干其他方面,一种用于制造发光二极管(LED)显示器的方法,包括:提供模板,该模板上设置有琴键形孔;将琴键形LED沉积到模板上;操纵琴键形LED使得每个琴键形LED装配在模板上相应的琴键形孔内并且每个琴键形LED都具有一个定向,基于该定向将电路板与具有琴键形LED的模板对准;并向电路板和模板施加压力,以及加热电路板和模板,使得预锡沉积物熔化到电路板上并将LED连接于电路板。
根据本文提供的描述,其他适用领域将变得显而易见。应该理解的是,描述和具体示例仅用于说明的目的,并不旨在限制本公开的范围。
附图说明
本文描述的附图仅用于说明的目的,并不旨在以任何方式限制本公开的范围。
图1是在用于制造LED显示器的方法中使用的示例性LED的俯视图;
图2是示例性LED的侧视图;
图3是示例性LED的端视图;
图4是该方法中使用的示例性模板的一部分的俯视图;
图5是用于制造LED显示器的方法的示意图;
图6是设置在示例性模板中的示例性LED的侧剖视图;
图7是第一电路板的俯视图;
图8是第二电路板的俯视图;
图9是与第一电路板一起使用的LED显示器的俯视图;以及,
图10是与第二电路板一起使用的LED显示器的俯视图。
具体实施方式
以下描述实质上仅是示例性的,并不旨在限制本公开、应用或用途。
大体地参考附图,本文示出并描述了一种用于制造LED显示器的方法,该方法提供了将LED转移到电路板上以形成LED显示器。然后,可以将LED显示器单独或者与其他LED显示器结合用于任何数量的实施例中,包括机动车辆镶板、玻璃窗、曲面或装饰件、柔性面板等。该方法以特定方式使每个LED匹配电路板的电路设计,从而确保每个LED通电,如下所述。
现在参照图1-3,在本公开的方法中使用的示例性琴键形LED总体上由附图标记10表示。琴键形LED 10可以具有各种形状、尺寸和设计,只要琴键形LED包括琴键形特征部即可。例如,琴键形LED 10可以是小尺寸或微型LED(2020、5050)并且可以具有任意数量的触点,包括2个触点、4个触点等。在所提供的示例中,琴键形LED 10是具有2个触点的微型LED。琴键形LED 10包括外壳12,外壳12容纳发光器,例如p-n结二极管(未示出),该发光器连接到阳极(在附图中用“+”示意性地示出)以及阴极(在附图中用“-”示意性地示出)。阳极接触垫14设置在外壳12的一侧,阴极接触垫16设置在外壳12的相对侧。透明透镜18设置在外壳12的上方。在一个示例中,琴键形LED 10包括设置于阳极接触垫14和阴极接触垫16中每一处的预锡沉积物20。在另一个示例中,琴键形LED 10不包括预锡沉积物20。
如上所述,琴键形LED 10包括形成在其中的琴键形特征部22,使得琴键形LED 10沿横向轴线“A-A”不对称。在所提供的示例中,琴键形特征部22在透镜18中形成为从透镜18切出的切口。因此,透镜18具有为平面的第一端24和弯曲的第二端26,第二端26形成琴键形特征部22。在另一示例中,琴键形特征部22可以形成在外壳12中,其中外壳12的一部分被移除,由虚线28表示,使得外壳12沿横向轴线A-A不对称。
再看图4,示例性模板的一部分总体上由附图标记30表示。在下面描述的制造方法中,模板30用于具体地定向多个琴键形LED 10。模板30可以是连续的柔性卷或者是一系列离散的板。模板30包括基板32,基板32上形成有多个琴键形孔34。每个琴键形孔34包括与琴键形LED 10的琴键形特征部22匹配的琴键形状36。因此,在所提供的示例中,琴键形孔34与透镜18的形状相匹配。
参照图5,并继续参照图1-4,总体上由附图标记100表示制造LED显示器的方法的图示。首先,利用旋转盘、轮或者滚筒104或任何其他合适的机构,使模板30移动通过模板台102或其他合适的基板或传送系统。模板台102上方设置有料斗106。在料斗106内布置大量琴键形LED 10。接下来,将琴键形LED 10放置在模板30上。在一个示例中,通过重力将琴键形LED 10馈送到模板30上。在另一个示例中,摇动、振动或以其他方式搅动料斗106,以便将琴键形LED 10放置到模板30上或模板30中。接着,操纵琴键形LED 10,使得每个琴键形LED10装配于模板30上的相应琴键形孔34内。例如,刷子108用于在物理上移动琴键形LED 10,使得它们落入模板30的琴键形孔34内。
由于琴键形LED 10的琴键形特征部22和模板30的琴键形状36,琴键形LED 10相对于模板30以特定配置定向。简要参照图6,示出了一个设置在模板30的琴键形孔34内的琴键形LED 10。在该示例中,透镜18装配在琴键形孔34内,同时外壳12、阳极接触垫14、阴极接触垫16以及预锡沉积物20设置在模板30的外表面30A上。
一旦模板30已经填充满琴键形LED 10,模板30便移动到转移台110。在转移台110处,电路板112通过电路板馈送装置被放置在模板30和琴键形LED 10的上方。简要参照图7,在一个实例中,电路板112是具有氧化铟锡层、FTO层或其他导电涂层的分隔透明导电膜,具有将膜分成阳极条涂层117A和阴极条涂层117B的迹线刻痕116。参照图8,示出了电路板112’的替代实施例。电路板112’包括设置在透明基板上的蚀刻或印刷电路118。在两个电路板112和112’中,琴键形LED 10必须以特定配置定向,以使阳极接触垫14和阴极接触垫16与适当的阳极和阴极电路或电路板112、112’匹配。
参照图5,一旦已将电路板112、112’放置在模板30的外表面30A的上方,便通过合适的装置(例如高压釜120)施加热和压力。预锡沉积物20熔化并将琴键形LED 10固定到其配置由模板30限定的电路板112、112’,以使用电路板112产生LED显示器122(如图9所示),或者使用电路板112’产生LED显示器122’(如图10所示)。在其他实施例中,预锡沉积物20可以直接放置在电路板112、112’上,而不是放置在琴键形LED 10上。在其他实施例中,琴键形LED 10可以焊接到电路板112、112’上。熔化的预锡沉积物20将琴键形LED 10与阳极条117A、阴极条117B或电路118电耦合。然后,可以将LED显示器122、122’作为一部分来移除并用于其他制程,例如层压或直接耦合到供电电路以向阳极和阴极条117A、117B或电路118提供电力,从而向琴键形LED 10提供电力。模板30可以再循环回到方法100中或者与LED显示器122、122’保持在一起。
制造本公开的LED显示器的方法提供了若干优点。这些优点包括速度提高、成本降低、设备对下一代车辆和车窗的适应性、LED定向可靠、创建复杂曲面的能力、非矩形装饰边缘、以任何所需模式大量转移LED以在任何期望的电路板配置上创建电路的能力,并提供适合于层压的显示器。
本公开的描述本质上仅是示例性的,并且不脱离本公开主旨的变型旨在落入本公开的范围内。不应将这些变形视为脱离本公开的精神和范围。
Claims (9)
1.一种用于制造发光二极管(LED)显示器或照明的方法,包括:
提供设置有琴键形孔的模板;
将琴键形LED放置在所述模板上;
操纵所述琴键形LED,使得所述琴键形LED的每一个都装配在所述模板上相应的琴键形孔内;以及
将所述琴键形LED转移到电路板上;
其中所述琴键形LED包括外壳、透镜以及琴键形特征部,所述外壳容纳发光器,所述透镜设置在所述外壳的上方,所述琴键形特征部在所述外壳或所述透镜中形成,所述琴键形特征部与形成在所述模板的所述琴键形孔中的琴键形状相配合,以使所述琴键形LED在特定方向上对准。
2.根据权利要求1所述的方法,其中所述电路板包括具有交替的导电涂层阴极条和导电涂层阳极条的分隔透明导电膜的基板。
3.根据权利要求2所述的方法,其中所述分隔透明导电膜包括氧化铟锡涂层。
4.根据权利要求2所述的方法,其中所述琴键形LED的特定方向使所述琴键形LED上的阴极触点与所述阴极条对准,并使所述琴键形LED上的阳极触点与所述阳极条对准。
5.根据权利要求4所述的方法,其中所述琴键形LED包括在每个所述阴极触点和所述阳极触点的每一个处的预锡沉积物。
6.根据权利要求5所述的方法,其中将所述琴键形LED转移到所述电路板上包括将所述电路板与所述模板对准,向所述电路板和所述模板施加压力,以及加热所述电路板和所述模板,使得所述预锡沉积物熔化并结合到所述电路板上。
7.根据权利要求4所述的方法,其中将所述琴键形LED转移到所述电路板上包括将所述电路板与所述模板对准,在所述琴键形LED的所述阴极触点和阳极触点的每一个上施加预锡沉积物,向所述电路板和所述模板施加压力,以及加热所述电路板和所述模板,使得所述预锡沉积物熔化到所述电路板上。
8.根据权利要求4所述的方法,其中将所述琴键形LED转移到所述电路板上包括将所述电路板与所述模板对准并将所述阴极触点和所述阳极触点焊接于所述电路板。
9.如权利要求1所述的方法,其中所述电路板是透明基板上的蚀刻或印刷电路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/044,852 | 2018-07-25 | ||
US16/044,852 US10418413B1 (en) | 2018-07-25 | 2018-07-25 | Method for manufacturing a light emitting diode display |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110783442A CN110783442A (zh) | 2020-02-11 |
CN110783442B true CN110783442B (zh) | 2022-12-27 |
Family
ID=67909165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910380245.4A Active CN110783442B (zh) | 2018-07-25 | 2019-05-08 | 制造发光二极管显示器的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10418413B1 (zh) |
CN (1) | CN110783442B (zh) |
DE (1) | DE102019111671A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11335842B2 (en) * | 2018-02-14 | 2022-05-17 | Maven Optronics Co., Ltd. | Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
CN107910413B (zh) * | 2017-11-21 | 2019-07-12 | 福州大学 | 一种MicroLED的巨量转移装置及转移方法 |
CN108010994B (zh) * | 2017-12-15 | 2019-10-18 | 惠州雷通光电器件有限公司 | 微发光二极管转移方法 |
-
2018
- 2018-07-25 US US16/044,852 patent/US10418413B1/en active Active
-
2019
- 2019-05-06 DE DE102019111671.6A patent/DE102019111671A1/de active Pending
- 2019-05-08 CN CN201910380245.4A patent/CN110783442B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN110783442A (zh) | 2020-02-11 |
DE102019111671A1 (de) | 2020-01-30 |
US10418413B1 (en) | 2019-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108140634B (zh) | 对部件进行表面安装的方法 | |
KR101847100B1 (ko) | Uv 임프린팅 기술을 이용한 투명 발광장치 제조 방법 및 그에 따라 제조되는 투명 발광장치 | |
US9287467B2 (en) | Techniques for adhering surface mount devices to a flexible substrate | |
JP2016504753A (ja) | 表示器および光パネルに用いるledダイの分散 | |
EP1357773A3 (en) | Wiring transfer sheet and method for producing the same, and wiring board and method for producing the same | |
WO2011126726A1 (en) | Electrically bonded arrays of transfer printed active components | |
CN103227263A (zh) | 配线基板及配线基板的制造方法 | |
CN111199907A (zh) | 微发光器件的转移方法及转移设备 | |
CN114823996B (zh) | Led芯片的转移方法、显示面板 | |
CN110783442B (zh) | 制造发光二极管显示器的方法 | |
CN205508876U (zh) | 车灯装置及其发光模块 | |
JP2024008937A (ja) | マイクロ発光ダイオードのマストランスファー方法及びシステム | |
CN115513244A (zh) | 临时基板、发光二极管芯片的转移方法及显示组件 | |
US10999936B2 (en) | Method for applying electronic components | |
US20070221942A1 (en) | LED backlight unit without printed circuit board and method of manufacturing the same | |
US10104780B2 (en) | Flexible printed circuit board and method of producing flexible printed circuit board | |
US6882106B2 (en) | Electroluminescent display device | |
CN112839448A (zh) | 一种单面线路板成型方法、以及冲裁与敷设装置 | |
CN112432072A (zh) | 一种封闭式的led灯带及其制作方法 | |
CN117059624B (zh) | 一种显示面板的制造方法以及制造设备 | |
CN113764564B (zh) | 基板制备方法及膜片结构 | |
KR20220089570A (ko) | 유리기판 상의 회로 배선 형성방법 및 유리 회로기판 | |
KR20200079124A (ko) | 투명 led 사이니지 | |
DE102018217465A1 (de) | Vorrichtung mit mindestens einem lichtemittierenden bauelement und verfahren zum herstellen derselben | |
JPH02260322A (ja) | 導電性透明体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |