CN110783326B - Substrate, preparation method thereof, display panel and display device - Google Patents
Substrate, preparation method thereof, display panel and display device Download PDFInfo
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- CN110783326B CN110783326B CN201911053591.8A CN201911053591A CN110783326B CN 110783326 B CN110783326 B CN 110783326B CN 201911053591 A CN201911053591 A CN 201911053591A CN 110783326 B CN110783326 B CN 110783326B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/023—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring distance between sensor and object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
Abstract
The invention provides a substrate, a preparation method of the substrate, a display panel and a display device, and relates to the technical field of detection. The substrate comprises a substrate, a plurality of ultrasonic sensing devices and a plurality of photosensitive devices, wherein the ultrasonic sensing devices and the photosensitive devices are arranged on the substrate in the same layer; the ultrasonic sensing device comprises a cavity structure and a first buffer layer, the photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layer and the second buffer layer are arranged on the same layer, the cavity structure is located between the substrate and the first buffer layer, and the photosensitive structure is located between the substrate and the second buffer layer. In the invention, the ultrasonic sensing device and the photosensitive device are arranged on the substrate in the same layer, and the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process, thereby improving the detection efficiency of the three-dimensional information. In addition, the ultrasonic sensing device and the photosensitive device share the buffer layer, and the cavity structure and the photosensitive structure are both positioned between the substrate and the shared buffer layer, so that the two devices can be prepared together, and the process is simple.
Description
Technical Field
The invention relates to the technical field of detection, in particular to a substrate, a preparation method of the substrate, a display panel and a display device.
Background
Nowadays, detection technology is applied more and more widely in the biological field, so that people can be helped to obtain more physiological information. For example, in the aspect of skin detection, two-dimensional information of the skin surface and depth information of the skin depth can be respectively detected, and by combining the two information, the skin can be studied and analyzed from a three-dimensional angle.
However, in the current application, since the two-dimensional information and the depth information of the same target area need to be detected separately, the detection efficiency is low.
Disclosure of Invention
The invention provides a substrate, a preparation method thereof, a display panel and a display device, and aims to solve the problem that the existing detection efficiency for detecting three-dimensional information is low.
In order to solve the problems, the invention discloses a substrate which comprises a substrate, a plurality of ultrasonic sensing devices and a plurality of photosensitive devices, wherein the ultrasonic sensing devices and the photosensitive devices are arranged on the substrate in the same layer; the ultrasonic sensor comprises a cavity structure and a first buffer layer, the photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layer and the second buffer layer are arranged on the same layer, the cavity structure is located between the substrate and the first buffer layer, and the photosensitive structure is located between the substrate and the second buffer layer.
Optionally, the ultrasound sensing device comprises an ultrasound sensing unit, the ultrasound sensing unit comprising:
a first plate formed on the substrate;
a first insulating layer covering the first electrode plate;
a first passivation layer covering the first insulating layer;
the first buffer layer partially covers the first passivation layer, the cavity structure is arranged between the first buffer layer and the first passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the cavity structure on the substrate;
the second polar plate is formed on the first buffer layer, and the orthographic projection of the second polar plate on the substrate at least partially covers the orthographic projection of the cavity structure on the substrate;
and the first connecting layer covers the second polar plate.
Optionally, the ultrasonic sensor device further comprises a first thin film transistor, the first thin film transistor comprising:
a first electrode layer;
the second connecting layer is connected with the first electrode layer through a first through hole, the second connecting layer is connected with the first polar plate through a second through hole, and the second connecting layer and the second polar plate are arranged on the same layer;
and a first composite resin layer covering the second connection layer.
Optionally, the photosensitive device comprises a photosensitive unit, the photosensitive unit comprising:
a third insulating layer formed on the substrate, the third insulating layer and the first insulating layer being disposed on the same layer;
the photosensitive structure comprises a second electrode layer, a photosensitive layer and a third electrode layer which are arranged in a laminated mode, wherein the second electrode layer is arranged close to the third insulating layer and partially covers the third insulating layer, the third electrode layer at least partially covers the photosensitive layer, and the second electrode layer and the first electrode layer are arranged on the same layer;
the second buffer layer covers the photosensitive structure;
the third connecting layer is formed on the second buffer layer and is connected with the third electrode layer through a third through hole, and the third connecting layer and the second connecting layer are arranged on the same layer;
a second composite resin layer covering a portion of the second buffer layer exposed at the third connection layer, the second composite resin layer being disposed on the same layer as the first composite resin layer;
and a fourth connection layer formed on the second composite resin layer, the fourth connection layer covering a portion of the third connection layer exposed from the second composite resin layer, the fourth connection layer being disposed on the same layer as the first connection layer.
Optionally, the second composite resin layer comprises:
a third passivation layer having an orthographic projection on the substrate that does not overlap with an orthographic projection of the photosensitive structure on the substrate;
a first resin layer covering the third passivation layer, and a portion of the second buffer layer exposed between the third connection layer and the third passivation layer.
Optionally, the photosensitive device further comprises a second thin film transistor, the second thin film transistor comprising:
the fourth electrode layer is arranged on the same layer as the second electrode layer and is connected with the second electrode layer;
and the third composite resin layer and the second composite resin layer are arranged on the same layer.
In order to solve the above problems, the present invention also discloses a method for manufacturing a substrate, comprising:
providing a substrate;
the method comprises the steps that a plurality of ultrasonic sensing devices and a plurality of photosensitive devices are formed on the substrate on the same layer, each ultrasonic sensing device comprises a cavity structure and a first buffer layer, each photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layers and the second buffer layers are arranged on the same layer, the cavity structures are located between the substrate and the first buffer layers, and the photosensitive structures are located between the substrate and the second buffer layers.
Optionally, the forming a plurality of ultrasonic sensing devices and a plurality of photosensitive devices on the substrate in the same layer includes:
forming a first polar plate on the substrate through a composition process;
forming a first insulating layer and a third insulating layer on the same layer, wherein the first insulating layer covers the first polar plate;
forming a first electrode layer, a second electrode layer in the photosensitive structure and a fourth electrode layer on the same layer, wherein the second electrode layer is arranged close to the third insulating layer and partially covers the third insulating layer, and the fourth electrode layer is connected with the second electrode layer;
forming a first passivation layer covering the first insulating layer;
forming a sacrificial layer and a photosensitive layer in the photosensitive structure on the same layer, wherein the photosensitive layer is formed on the part of the second electrode layer exposed out of the first passivation layer, the sacrificial layer is formed on the first passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the sacrificial layer on the substrate;
forming a third electrode layer in the photosensitive structure on the photosensitive layer, the third electrode layer at least partially covering the photosensitive layer;
forming the first buffer layer and the second buffer layer on the same layer, and forming the cavity structure between the first buffer layer and the first passivation layer, wherein the first buffer layer partially covers the first passivation layer, an orthographic projection of the first electrode plate on the substrate covers an orthographic projection of the cavity structure on the substrate, the second buffer layer covers the photosensitive structure, and an orthographic projection of the first electrode plate on the substrate covers an orthographic projection of the cavity structure on the substrate;
forming a second polar plate, a second connecting layer and a third connecting layer on the same layer, wherein the second polar plate is formed on the first buffer layer, the orthographic projection of the second polar plate on the substrate at least partially covers the orthographic projection of the cavity structure on the substrate, the second connecting layer is connected with the first electrode layer through a first through hole, the second connecting layer is connected with the first polar plate through a second through hole, the third connecting layer is formed on the second buffer layer, and the third connecting layer is connected with the third electrode layer through a third through hole;
forming a first composite resin layer, a second composite resin layer and a third composite resin layer on the same layer, wherein the first composite resin layer covers the second connecting layer, and the second composite resin layer covers the part of the second buffer layer exposed out of the third connecting layer;
and forming a first connecting layer and a fourth connecting layer on the same layer, wherein the first connecting layer covers the exposed part of the second pole plate between the first composite resin layer and the second composite resin layer, the fourth connecting layer is formed on the second composite resin layer, and the fourth connecting layer covers the exposed part of the third connecting layer on the second composite resin layer.
Optionally, the first buffer layer includes a first sub buffer layer and a second sub buffer layer which are stacked, and the second buffer layer includes a third sub buffer layer and a fourth sub buffer layer which are stacked;
forming the first buffer layer and the second buffer layer on the same layer, and forming the cavity structure between the first buffer layer and the first passivation layer, including:
forming the first sub buffer layer and the third sub buffer layer on the same layer, wherein the first sub buffer layer is provided with an opening partially exposing the sacrificial layer;
removing the sacrificial layer through the opening to form the cavity structure between the first buffer layer and the first passivation layer;
and forming the second sub-buffer layer and the fourth sub-buffer layer on the same layer, wherein the second sub-buffer layer covers the first sub-buffer layer and the opening, and the fourth sub-buffer layer covers the third sub-buffer layer.
In order to solve the above problem, the invention also discloses a display panel comprising the above substrate.
In order to solve the above problem, the present invention further discloses a display device including the above display panel.
Compared with the prior art, the invention has the following advantages:
in the embodiment of the invention, the ultrasonic sensing device and the photosensitive device are arranged on the substrate at the same layer, so that the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process without respectively detecting the two-dimensional information and the depth information of the target area, thereby improving the detection efficiency of the three-dimensional information. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
Drawings
Fig. 1 is a structural view of a substrate according to a first embodiment of the present invention;
fig. 2 is a flowchart illustrating a method of manufacturing a substrate according to a second embodiment of the present invention;
fig. 3 is a flowchart illustrating another method of manufacturing a substrate according to a second embodiment of the present invention;
fig. 4 is a schematic diagram of a substrate after a first plate, a first gate and a second gate are formed on the same layer on the substrate according to a second embodiment of the present invention;
fig. 5 is a schematic diagram of a substrate after a first insulating layer, a second insulating layer, a third insulating layer and a fourth insulating layer are formed on the same layer according to a second embodiment of the invention;
fig. 6 is a schematic diagram of a substrate after forming a first active layer and a second active layer on the same layer according to a second embodiment of the invention;
FIG. 7 is a schematic diagram of a substrate after forming a first electrode layer, a second electrode layer in a photosensitive structure, and a fourth electrode layer in the same layer according to a second embodiment of the invention;
fig. 8 is a schematic diagram of a substrate after forming a first passivation layer, a second passivation layer and a fourth passivation layer in the same layer according to a second embodiment of the invention;
fig. 9 is a schematic diagram of a substrate after forming a first electrode material layer and a second electrode material layer according to a second embodiment of the present invention;
fig. 10 is a schematic diagram of the substrate after the second electrode material layer is removed and a third electrode layer is formed according to the second embodiment of the invention;
fig. 11 is a schematic diagram illustrating a substrate after a first sub-buffer layer, a third sub-buffer layer, a fifth sub-buffer layer and a seventh sub-buffer layer are formed on the same layer according to a second embodiment of the invention;
fig. 12 is a schematic diagram of a substrate after a cavity structure is formed according to a second embodiment of the present invention;
fig. 13 is a schematic diagram of a substrate after forming a second sub-buffer layer, a fourth sub-buffer layer, a sixth sub-buffer layer, and an eighth sub-buffer layer in the same layer according to a second embodiment of the invention;
fig. 14 is a schematic diagram of a substrate after forming a first via hole, a second via hole and a third via hole according to a second embodiment of the invention;
fig. 15 is a schematic diagram of a substrate after forming a second plate, a second connection layer and a third connection layer on the same layer according to a second embodiment of the invention;
fig. 16 is a schematic diagram of a substrate after forming a fifth passivation layer, a third passivation layer and a sixth passivation layer in the same layer according to a second embodiment of the invention;
fig. 17 is a schematic diagram of a substrate after forming a second resin layer, a first resin layer, and a third resin layer in the same layer according to a second embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
Referring to fig. 1, a substrate according to a first embodiment of the present invention is shown, which includes a substrate 10, a plurality of ultrasonic sensing devices 20 and a plurality of photosensitive devices 30, wherein the ultrasonic sensing devices 20 and the photosensitive devices 30 are disposed on the substrate in the same layer. The ultrasonic sensing device 20 comprises a cavity structure 211 and a first buffer layer 212, the photosensitive device 30 comprises a photosensitive structure 311 and a second buffer layer 312, the first buffer layer 212 and the second buffer layer 312 are arranged on the same layer, the cavity structure 211 is located between the substrate 10 and the first buffer layer 212, and the photosensitive structure 311 is located between the substrate 10 and the second buffer layer 312.
In the embodiment of the present invention, the photosensitive devices 30 may be configured to detect two-dimensional information of a surface of a target area, the ultrasonic sensing devices 20 may be configured to detect depth information of the target area, and in the substrate, each ultrasonic sensing device 20 and each photosensitive device 30 are disposed on the same layer on the substrate 10, so that the substrate may obtain three-dimensional information of the target area simultaneously in one detection process without separately detecting the two-dimensional information and the depth information of the target area, thereby improving detection efficiency of the three-dimensional information. In addition, the first buffer layer 212 in the ultrasonic sensing device 20 and the second buffer layer 32 in the photosensitive device 30 are disposed on the same layer, that is, the ultrasonic sensing device 20 and the photosensitive device 30 may share a buffer layer, and both the cavity structure 211 in the ultrasonic sensing device 20 and the photosensitive structure 311 in the photosensitive device 30 are located between the substrate 10 and the shared buffer layer, so that the ultrasonic sensing device 20 and the photosensitive device 30 may be manufactured together, and the process is simple.
Alternatively, the ultrasonic sensing device 20 includes an ultrasonic sensing unit 21, and the ultrasonic sensing unit 21 includes:
a first plate 213 formed on the substrate 10;
a first insulating layer 214 covering the first plate 213;
a first passivation layer 215 covering the first insulating layer 214;
a first buffer layer 212 partially covering the first passivation layer 215, a cavity structure 211 being disposed between the first buffer layer 212 and the first passivation layer 215, an orthographic projection of the first plate 213 on the substrate 10 covering an orthographic projection of the cavity structure 211 on the substrate 10;
a second plate 216 formed on the first buffer layer 212, wherein an orthographic projection of the second plate 216 on the substrate 10 at least partially covers an orthographic projection of the cavity structure 211 on the substrate 10;
and a first connection layer 217 covering the second plate 216.
The ultrasonic sensing unit 21 is provided with a CMUT (Capacitive micromachined ultrasonic transducer) structure, where the CMUT structure includes an upper plate, a lower plate, and a cavity structure 211 located between the upper plate and the lower plate. Wherein the lower plate is composed of a first plate 213, a first insulating layer 214 and a first passivation layer 215, the upper plate is composed of a first buffer layer 212 and a second plate 216, and the first plate 213, the cavity structure 211 and the second plate 216 are core parts in the CMUT structure.
Before the three-dimensional information detection is performed through the substrate, a direct current bias within 100V may be respectively loaded on the first plate 213 and the second plate 216, when the three-dimensional information detection is performed through the substrate, the direct current bias is continuously loaded on the first plate 213, a high-frequency alternating current voltage within 100V is loaded on the second plate 216, the frequency range is 1 MHz-15 MHz, and thus the second plate 216 may vibrate and transmit an ultrasonic signal to a target area. Then, the high-frequency ac voltage may be stopped from being applied to the second plate 216, so that the second plate 216 will remain in a bending static state, and receive the ultrasonic signal reflected by the target region, and vibrate again to cause the thickness of the cavity structure 211 to change, so that the capacitance changes, and then the second plate 216 may output an electrical signal based on the capacitance change, so as to obtain the depth information of the target region according to the electrical signal.
Optionally, the ultrasonic sensing device 20 further includes a first thin film transistor 22, and the first thin film transistor 22 includes:
a first gate 221 formed on the substrate 10, the first gate 221 and the first plate 213 being disposed on the same layer;
a second insulating layer 222 covering the first gate electrode 221, the second insulating layer 222 being disposed on the same layer as the first insulating layer 214;
a first active layer 223 formed on the second insulating layer 222, an orthographic projection of the first active layer 223 on the substrate 10 at least partially covering an orthographic projection of the first gate electrode 221 on the substrate 10;
a first electrode layer 224 partially covering the first active layer 223;
a second passivation layer 225 covering the first electrode layer 224 and a portion of the first active layer 223 exposed at the first electrode layer 224, the second passivation layer 225 being disposed on the same layer as the first passivation layer 215;
a third buffer layer 226 formed on the second passivation layer 225, the third buffer layer 226 being disposed on the same layer as the first buffer layer 212;
a second connection layer 227 formed on the third buffer layer 226, the second connection layer 227 being connected to the first electrode layer 224 through a first via hole, the second connection layer 227 being connected to the first electrode plate 213 through a second via hole, the second connection layer 227 being disposed on the same layer as the second electrode plate 216;
the first composite resin layer 228 covers the second connection layer 227, and the third buffer layer 226 covers a portion of the second connection layer 227 where the second connection layer 227 is exposed.
The first thin film transistor 22 may be used to input a dc bias voltage or a high-frequency ac voltage to the ultrasonic sensing unit 21 to control the CMUT structure in the ultrasonic sensing unit 21 to operate. The first electrode layer 224 includes a source electrode and a drain electrode of the first thin film transistor 22, and the drain electrode may be connected to the first plate 213 through the second connection layer 227, so that a dc bias may be input to the first plate 213 through the source electrode to achieve control of the first plate 213 in the CMUT structure. It is understood that the source and drain of the first thin film transistor 22 may be interchanged for a particular application.
In addition, the first composite resin layer 228 includes:
a fifth passivation layer 2281 covering the second connection layer 227, and a portion of the third buffer layer 226 exposed at the second connection layer 227;
and a second resin layer 2282 covering the fifth passivation layer 2281.
The fifth passivation layer 2281 can prevent the second connection layer 227 and the second resin layer 2282 made of metal from falling off due to poor adhesion.
Alternatively, the photosensitive device 30 includes a photosensitive unit 31, and the photosensitive unit 31 includes:
a third insulating layer 313 formed on the substrate 10, the third insulating layer 313 being disposed on the same layer as the first insulating layer 214;
the photosensitive structure 311 includes a second electrode layer 3111, a photosensitive layer 3112 and a third electrode layer 3113 stacked in layers, the second electrode layer 3111 is disposed adjacent to the third insulating layer 313 and partially covers the third insulating layer 313, the third electrode layer 3113 at least partially covers the photosensitive layer 3112, and the second electrode layer 3111 and the first electrode layer 224 are disposed on the same layer;
a second buffer layer 312 covering the photosensitive structure 311;
a third connection layer 314 formed on the second buffer layer 312, the third connection layer 314 being connected to the third electrode layer 3113 through a third via hole, the third connection layer 314 and the second connection layer 227 being disposed on the same layer;
a second composite resin layer 315 covering a portion of the second buffer layer 312 exposed at the third connection layer 314, the second composite resin layer 315 being disposed on the same layer as the first composite resin layer 228;
and a fourth connection layer 316 formed on the second composite resin layer 315, the fourth connection layer 316 covering a portion of the third connection layer 314 exposed from the second composite resin layer 315, the fourth connection layer 316 being provided on the same layer as the first connection layer 217.
The third electrode layer 3113 may be made of a transparent material, such as ITO (Indium Tin oxide), so as to prevent the photosensitive layer 3112 from receiving external light. The photosensitive structure 311 may specifically be a PIN photodiode. In a specific application, a bias voltage required for operation can be applied to the photosensitive layer 3112 through the third electrode layer 3113, and when photons with sufficient energy are incident on the photosensitive layer 3112, the photosensitive layer 3112 can be excited to generate photo-generated charges, thereby forming a photocurrent signal.
Alternatively, the second composite resin layer 315 includes:
a third passivation layer 3151, an orthographic projection of the third passivation layer 3151 on the substrate 10 does not overlap with an orthographic projection of the photosensitive structure 311 on the substrate 10;
the first resin layer 3152 covers the third passivation layer 3151 and a portion of the second buffer layer 312 exposed between the third connection layer 314 and the third passivation layer 3151.
The orthographic projection of the third passivation layer 3151 on the substrate 10 is not overlapped with the orthographic projection of the photosensitive structure 311 on the substrate, so that the photosensitive surface of the photosensitive structure 311 far away from one side of the substrate 10 is not shielded by the third passivation layer 3151, the light transmittance of the photosensitive structure 311 near one side of the photosensitive surface is improved, and the accuracy of a two-dimensional information detection result can be improved.
Alternatively, as shown in fig. 1, the third electrode layer 3113 may partially cover the photosensitive layer 3112. In a specific application, the third electrode layer 3113 may be etched slightly inward, so as to be retracted in the photosensitive layer 3112, thereby reducing dark current of the photosensitive structure 311, and further improving accuracy of the two-dimensional information detection result.
Of course, the third electrode layer 3113 may also completely cover the photosensitive layer 3112, which is not particularly limited in this embodiment of the invention.
Optionally, the photosensitive device 30 further comprises a second thin film transistor 32, the second thin film transistor 32 comprising:
a second gate 321 formed on the substrate 10, the second gate 321 and the first plate 213 being disposed on the same layer;
a fourth insulating layer 322 covering the second gate 321, the fourth insulating layer 322 and the third insulating layer 313 being disposed on the same layer;
a second active layer 323 formed on the fourth insulating layer 322, an orthographic projection of the second active layer 323 on the substrate 10 at least partially covering an orthographic projection of the second gate electrode 321 on the substrate 10, the second active layer 323 being disposed in the same layer as the first active layer 223;
a fourth electrode layer 324 partially covering the second active layer 323, the fourth electrode layer 324 being disposed in the same layer as the second electrode layer 3111 and connected to the second electrode layer 3111;
a fourth passivation layer 325 covering the fourth electrode layer 324 and the exposed portion of the second active layer 323 on the fourth electrode layer 324, the fourth passivation layer 325 being disposed on the same layer as the first passivation layer 215;
a fourth buffer layer 326 formed on the fourth passivation layer 325, the fourth buffer layer 326 and the second buffer layer 312 being disposed on the same layer;
the third composite resin layer 327 covers the fourth buffer layer 326, and the third composite resin layer 327 and the second composite resin layer 315 are disposed in the same layer.
The fourth electrode layer 324 includes a source and a drain of the second thin film transistor 32, and the drain may be disposed on the same layer as the second electrode layer 3111 and connected to the second electrode layer 3111. After the photo current signal is formed by the photosensitive layer 3112, the second thin film transistor 32 may be turned on, and the photosensitive layer 3112 may transfer photo-generated charges to the second thin film transistor 32 through the second electrode layer 3111, thereby releasing the photo-generated charges through the second thin film transistor 32 for the next detection. It is understood that the source and drain of the second thin film transistor 32 may be interchanged for a particular application.
In addition, the third composite resin layer 327 includes:
a sixth passivation layer 3271 covering a portion of the fourth connection layer 316 extending to the second thin film transistor 32, and a fourth buffer layer 326;
and a third resin layer 3272 covering the sixth passivation layer 3271.
The sixth passivation layer 3271 can prevent the fourth connection layer 316 and the third resin layer 3272 made of metal from falling off due to poor adhesion.
In addition, the side of the first connection layer 217 of the ultrasonic sensing unit 21 away from the second pole plate 216 does not need to be provided with a composite resin layer, so that the resin layer can be prevented from affecting the vibration of the second pole plate 216.
Referring to fig. 1, from the entire substrate, the first electrode plate 213, the first gate electrode 221, and the second gate electrode 321 may be disposed at the same layer, the first insulating layer 214, the second insulating layer 222, the third insulating layer 313, and the fourth insulating layer 322 may be disposed at the same layer, the first active layer 223 and the second active layer 323 may be disposed at the same layer, the first electrode layer 224, the second electrode layer 3111, and the fourth electrode layer 324 may be disposed at the same layer, the first passivation layer 215, the second passivation layer 225, and the fourth passivation layer 325 may be disposed at the same layer, the first buffer layer 212, the second buffer layer 312, the third buffer layer 226, and the fourth buffer layer 326 may be disposed at the same layer, the second electrode plate 216, the second connection layer 227, and the third connection layer 314 may be disposed at the same layer, the first composite resin layer 228, the second composite resin layer 315, and the third composite resin layer 327 may be disposed at the same layer, the first connection layer 217 and the fourth connection layer 316 may be disposed at the same layer, that is, most of the structures of the ultrasonic sensor unit 21 and the photosensitive unit 31 can be disposed in the same layer, so that the ultrasonic sensor unit 21 and the photosensitive unit 31 can be integrated on one substrate and the number of manufacturing process steps of the substrate can be reduced.
In an embodiment of the present invention, the material of the first active layer 223 and the second active layer 323 may be IGZO (Indium Gallium Zinc Oxide), optionally.
Alternatively, the material of the first passivation layer 215, the second passivation layer 225, and the fourth passivation layer 325 may be silicon oxide.
Alternatively, the material of the third electrode layer 3113 may be a transparent metal material, such as ITO.
Alternatively, the material of the first, second, third, and fourth buffer layers 212, 312, 226, and 326 may be silicon nitride or silicon oxide.
Alternatively, the material of the fifth, third, and sixth passivation layers 2281, 3151, and 3271 may be silicon oxide.
Alternatively, the materials of the first electrode plate 213, the second electrode plate 216, the first connection layer 217, the first gate 221, the first electrode layer 224, the second connection layer 227, the second electrode layer 3111, the third connection layer 314, the fourth connection layer 316, the second gate 321, and the fourth electrode layer 324 may be metal materials.
Further alternatively, a display unit may be formed on the substrate 10, and the display unit may be used to display data such as detection results of two-dimensional information and depth information, so that a display device compatible with display, photodetection, and ultrasonic detection can be obtained.
In the embodiment of the invention, the ultrasonic sensing device and the photosensitive device are arranged on the substrate at the same layer, so that the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process without respectively detecting the two-dimensional information and the depth information of the target area, thereby improving the detection efficiency of the three-dimensional information. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
Example two
Referring to fig. 2, a flowchart of a method for manufacturing a substrate according to a second embodiment of the present invention is shown, where the method specifically includes the following steps:
step 201: a substrate is provided.
Step 202: a plurality of ultrasonic sensing devices and a plurality of photosensitive devices are formed on the same layer on a substrate, each ultrasonic sensing device comprises a cavity structure and a first buffer layer, each photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layers and the second buffer layers are arranged on the same layer, the cavity structures are located between the substrate and the first buffer layers, and the photosensitive structures are located between the substrate and the second buffer layers.
In the embodiment of the invention, the photosensitive device can be used for detecting the two-dimensional information of the surface of the target area, the ultrasonic sensing device can be used for detecting the depth information of the target area, and the substrate can be provided with a plurality of ultrasonic sensing devices and a plurality of photosensitive devices on the same layer. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
Fig. 3 shows a flowchart of another substrate preparation method according to the second embodiment of the present invention, and optionally, referring to fig. 3, step 202 may be implemented by the following sub-steps, including:
substep 20201: and forming a first polar plate, a first grid and a second grid on the substrate in the same layer through a patterning process.
Referring to fig. 4, the first plate 213 of the ultrasonic sensing unit 21, the first gate electrode 221 of the first thin film transistor 22, and the second gate electrode 321 of the second thin film transistor 32 are formed in the same layer on the substrate 10 through a 1 st Mask process.
Substep 20202: and forming a first insulating layer, a second insulating layer, a third insulating layer and a fourth insulating layer on the same layer, wherein the first insulating layer covers the first polar plate, the second insulating layer covers the first grid, the third insulating layer covers the part of the substrate exposed between the first grid and the second grid, and the fourth insulating layer covers the second grid.
Referring to fig. 5, the first insulating layer 214 of the ultrasonic sensing unit 21, the second insulating layer 222 of the first thin film transistor 22, the third insulating layer 313 of the photosensitive unit 31, and the fourth insulating layer 322 of the second thin film transistor 32 are formed in the same layer.
Substep 20203: and forming a first active layer and a second active layer on the same layer, wherein the orthographic projection of the first active layer on the substrate at least partially covers the orthographic projection of the first grid electrode on the substrate, and the orthographic projection of the second active layer on the substrate at least partially covers the orthographic projection of the second grid electrode on the substrate.
Referring to fig. 6, the first active layer 223 of the first thin film transistor 22 and the second active layer 323 of the second thin film transistor 32 are formed at the same layer through the 2 nd Mask process.
Substep 20204: and forming a first electrode layer, a second electrode layer in the photosensitive structure and a fourth electrode layer on the same layer, wherein the first electrode layer partially covers the first active layer, the second electrode layer is arranged close to the third insulating layer and partially covers the third insulating layer, the fourth electrode layer partially covers the second active layer, and the fourth electrode layer is connected with the second electrode layer.
Referring to fig. 7, the first electrode layer 224 of the first thin film transistor 22, the second electrode layer 3111 of the light sensing unit 31, and the fourth electrode layer 324 of the second thin film transistor 32 are formed in the same layer through a 3 rd Mask process. The fourth electrode layer 324 is connected to the second electrode layer 3111. The first electrode layer 224 includes a source electrode and a drain electrode of the first thin film transistor 22, and the fourth electrode layer 324 includes a source electrode and a drain electrode of the second thin film transistor 32.
Substep 20205: and forming a first passivation layer, a second passivation layer and a fourth passivation layer on the same layer, wherein the first passivation layer covers the first insulating layer, the second passivation layer covers the first electrode layer, the exposed part of the first active layer on the first electrode layer, the fourth passivation layer covers the fourth electrode layer, and the exposed part of the second active layer on the fourth electrode layer.
Referring to fig. 8, the first passivation layer 215 of the ultrasonic sensing unit 21, the second passivation layer 225 of the first thin film transistor 22, and the fourth passivation layer 325 of the second thin film transistor 32 are formed in the same layer through a 4 th Mask process. Wherein no passivation layer is disposed at the position where the photosensitive structure 311 needs to be formed.
Step 20206: and forming a sacrificial layer and a photosensitive layer in the photosensitive structure on the same layer, wherein the photosensitive layer is formed on the part of the second electrode layer exposed between the first passivation layer and the fourth passivation layer, the sacrificial layer is formed on the first passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the sacrificial layer on the substrate.
Referring to fig. 9, the sacrificial layer 04 and the photosensitive layer 3112 in the photosensitive structure 311 are formed in the same layer through a 5 th Mask process. Wherein the sacrificial layer 04 is located at the ultrasound sensing unit 21.
Substep 20207: and forming a third electrode layer in the photosensitive structure on the photosensitive layer, wherein the third electrode layer at least partially covers the photosensitive layer.
Referring to fig. 9, a first electrode material layer 31130 in the photosensitive structure 311 may be first formed on the photosensitive layer 3112 and a second electrode material layer 05 may be formed on the sacrificial layer 04 through a Mask process, the first electrode material layer 31130 covering the photosensitive layer 3112 and the second electrode material layer 05 covering the sacrificial layer 04. The first electrode material layer 31130 and the second electrode material layer 05 are formed in the same layer, and the first electrode material layer 31130 and the second electrode material layer 05 may be formed by a Mask process with the sacrificial layer 04 and the photosensitive layer 3112, that is, a 5 th Mask process.
Then, optionally, referring to fig. 10, the second electrode material layer 05 may be etched away through a 6 th Mask process, and at the same time, an edge region of the first electrode material layer 31130 may be etched, so as to obtain a third electrode layer 3113. By slightly etching the third electrode layer 3113 inward, the photosensitive layer 3112 is properly indented, so that the dark current of the photosensitive structure 311 can be reduced, and the accuracy of the two-dimensional information detection result can be improved. Of course, alternatively, the second electrode material layer 05 may be removed only by the Mask process of the 6 th time without etching the edge region of the first electrode material layer 31130, in which case, the first electrode material layer 31130 is the third electrode layer 3113.
Substep 20208: a first buffer layer, a second buffer layer, a third buffer layer and a fourth buffer layer are formed on the same layer, a cavity structure is formed between the first buffer layer and the first passivation layer, the first buffer layer partially covers the first passivation layer, the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the cavity structure on the substrate, the second buffer layer covers the photosensitive structure, the third buffer layer is formed on the second passivation layer, the fourth buffer layer is formed on the fourth passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the cavity structure on the substrate.
Optionally, the first buffer layer includes a first sub buffer layer and a second sub buffer layer which are stacked, the second buffer layer includes a third sub buffer layer and a fourth sub buffer layer which are stacked, the third buffer layer includes a fifth sub buffer layer and a sixth sub buffer layer which are stacked, and the fourth buffer layer includes a seventh sub buffer layer and an eighth sub buffer layer which are stacked, and accordingly, the sub-step 20208 may be specifically implemented by:
forming a first sub buffer layer, a third sub buffer layer, a fifth sub buffer layer and a seventh sub buffer layer on the same layer, wherein the first sub buffer layer is provided with an opening partially exposing the sacrificial layer; removing the sacrificial layer through the opening to form a cavity structure between the first buffer layer and the first passivation layer; and forming a second sub buffer layer, a fourth sub buffer layer, a sixth sub buffer layer and an eighth sub buffer layer on the same layer, wherein the second sub buffer layer covers the first sub buffer layer and the opening, the fourth sub buffer layer covers the third sub buffer layer, the sixth sub buffer layer covers the fifth sub buffer layer, and the eighth sub buffer layer covers the seventh sub buffer layer.
Referring to fig. 11, first, the first sub-buffer layer 2121 of the first buffer layer 212, the third sub-buffer layer 3121 of the second buffer layer 312, the fifth sub-buffer layer 2261 of the third buffer layer 226, and the seventh sub-buffer layer 3261 of the fourth buffer layer 326 may be formed on the same layer through a 7 th Mask process. The first sub-buffer layer 2121 is provided with an opening 06 partially exposing the sacrificial layer 04, and the opening 06 may expose a part of the edge region of the sacrificial layer 04 to avoid affecting the vibration of the film layer located on the side of the sacrificial layer 04 away from the substrate 10.
Then, a strong alkali solution may be injected through the opening 06 to etch away the sacrificial layer 04, and after the sacrificial layer 04 is completely etched away, a cavity structure 211 may be formed between the first buffer layer 212 and the first passivation layer 215 of the ultrasonic sensing unit 21, as shown in fig. 12. The alkali solution may be a solution such as potassium hydroxide, which is not particularly limited in the embodiment of the present invention.
Thereafter, referring to fig. 13, the second sub-buffer layer 2122 of the first buffer layer 212, the fourth sub-buffer layer 3122 of the second buffer layer 312, the sixth sub-buffer layer 2262 of the third buffer layer 226, and the eighth sub-buffer layer 3262 of the fourth buffer layer 326 may be formed in the same layer. Wherein the second sub buffer layer may cover the opening 06, thereby closing the opening 06.
Substep 20209: and a second polar plate, a second connecting layer and a third connecting layer are formed on the same layer, the second polar plate is formed on the first buffer layer, the orthographic projection of the second polar plate on the substrate at least partially covers the orthographic projection of the cavity structure on the substrate, the second connecting layer is formed on the third buffer layer, the second connecting layer is connected with the first electrode layer through the first through hole, the second connecting layer is connected with the first polar plate through the second through hole, the third connecting layer is formed on the second buffer layer, and the third connecting layer is connected with the third electrode layer through the third through hole.
Referring to fig. 14, first, a first via 01, a second via 02, and a third via 03 may be first formed through an 8 th Mask process. Wherein, the drain electrode of the first electrode layer 224 may be exposed through the first via 01. A portion of the first plate 213 extending to the region of the first thin film transistor 22 may be exposed through the second via 02, and an orthographic projection of the second via 02 on the substrate 10 does not overlap with an orthographic projection of the cavity structure 211 on the substrate 10. A portion of the edge region of the third electrode layer 3113 adjacent to the second thin film transistor 32 may be exposed through the third via hole 03.
Then, referring to fig. 15, the second plate 216 of the ultrasonic sensing unit 21, the second connection layer 227 of the first thin film transistor 22, and the third connection layer 314 of the photosensitive unit 31 may be formed in the same layer by a 9 th Mask process. The second connection layer 227 may be connected to the first electrode layer 224 through the first via 01 and connected to the first electrode plate 213 through the second via 02. The third connection layer 314 may be connected to the third electrode layer 3113 through the third via hole 03, and the third connection layer 314 may further extend along the fourth buffer layer 326 to a region of the second thin film transistor 32, as shown in fig. 15.
Substep 20210: and forming a first composite resin layer, a second composite resin layer and a third composite resin layer on the same layer, wherein the first composite resin layer covers the second connecting layer, the exposed part of the third buffer layer on the second connecting layer, the second composite resin layer covers the exposed part of the second buffer layer on the third connecting layer, and the third composite resin layer covers the fourth buffer layer.
Alternatively, the first composite resin layer includes a fifth passivation layer and a second resin layer, the second composite resin layer includes a third passivation layer and a first resin layer, and the third composite resin layer includes a sixth passivation layer and a third resin layer.
Accordingly, referring to fig. 16, the fifth passivation layer 2281 of the first composite resin layer 228, the third passivation layer 3151 of the second composite resin layer 315, and the sixth passivation layer 3271 of the third composite resin layer 327 may be first layer-formed through a 10 th Mask process. Wherein the fifth passivation layer 2281 covers the second connection layer 227, and a portion of the third buffer layer 226 exposed at the second connection layer 227, an orthogonal projection of the third passivation layer 3151 on the substrate 10 does not overlap an orthogonal projection of the photosensitive structure 311 on the substrate 10, the first resin layer 3152 covers the third passivation layer 3151, and a portion of the second buffer layer 312 exposed between the third connection layer 314 and the third passivation layer 3151.
In addition, the side of the first connection layer 217 of the ultrasonic sensing unit 21 away from the second plate 216 does not need to be provided with a passivation layer, so that the passivation layer can be prevented from obstructing the vibration of the second plate 216.
Then, referring to fig. 17, the second resin layer 2282 of the first composite resin layer 228, the first resin layer 3152 of the second composite resin layer 315, and the third resin layer 3272 of the third composite resin layer 327 may be layer-formed through an 11 th Mask process. Wherein the second resin layer 2282 covers the fifth passivation layer 2281, the first resin layer 3152 covers the third passivation layer 3151, and a portion of the second buffer layer 312 exposed between the third connection layer 314 and the third passivation layer 3151, and the third resin layer 3272 covers the sixth passivation layer 3271.
The orthographic projection of the third passivation layer 3151 on the substrate 10 is not overlapped with the orthographic projection of the photosensitive structure 311 on the substrate, so that the photosensitive surface of the photosensitive structure 311 far away from one side of the substrate 10 is not shielded by the third passivation layer 3151, the light transmittance of the photosensitive structure 311 near one side of the photosensitive surface is improved, and the accuracy of a two-dimensional information detection result can be improved.
In addition, the side of the first connection layer 217 of the ultrasonic sensing unit 21 away from the second pole plate 216 does not need to be provided with a resin layer, so that the resin layer can be prevented from affecting the vibration of the second pole plate 216.
Each passivation layer in the sub-step can avoid the connection layer made of the metal material and the resin layer from falling off due to poor adhesion.
Substep 20211: and forming a first connecting layer and a fourth connecting layer on the same layer, wherein the first connecting layer covers the exposed part of the second pole plate between the first composite resin layer and the second composite resin layer, the fourth connecting layer is formed on the second composite resin layer, and the fourth connecting layer covers the exposed part of the third connecting layer on the second composite resin layer.
Referring to fig. 1, the first connection layer 217 of the ultrasonic sensing unit 21 and the fourth connection layer 316 of the photosensitive unit 31 may be formed in the same layer through a 12 th Mask process. The first connection layer 217 may protect the exposed portion of the second electrode 216, and the fourth connection layer 316 may protect the exposed portion of the third connection layer 314. The first connection layer 217 and the fourth connection layer 316 may be made of a metal material such as ITO, which is not particularly limited in the embodiment of the present invention.
The conventional PIN device needs 11-13 Mask processes, while the substrate provided by the embodiment of the invention only needs 12 Mask processes, so that the ultrasonic sensing device and the photosensitive device can be integrated on the same substrate without adding excessive additional complex processes, and the preparation process is simplified.
In the embodiment of the invention, the plurality of ultrasonic sensing devices and the plurality of photosensitive devices can be formed on the substrate in the same layer, so that the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process without respectively detecting the two-dimensional information and the depth information of the target area, thereby improving the detection efficiency of the three-dimensional information. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
EXAMPLE III
The invention also discloses a display panel comprising the substrate.
In the embodiment of the invention, the ultrasonic sensing device and the photosensitive device are arranged on the substrate at the same layer, so that the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process without respectively detecting the two-dimensional information and the depth information of the target area, thereby improving the detection efficiency of the three-dimensional information. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
Example four
The invention also discloses a display device comprising the display panel.
In the embodiment of the invention, the ultrasonic sensing device and the photosensitive device are arranged on the substrate at the same layer, so that the substrate can simultaneously obtain the three-dimensional information of the target area in one detection process without respectively detecting the two-dimensional information and the depth information of the target area, thereby improving the detection efficiency of the three-dimensional information. In addition, the first buffer layer in the ultrasonic sensor device and the second buffer layer in the photosensitive device are arranged on the same layer, namely the ultrasonic sensor device and the photosensitive device can share the buffer layers, and the cavity structure in the ultrasonic sensor device and the photosensitive structure in the photosensitive device are both positioned between the substrate and the shared buffer layers, so that the ultrasonic sensor device and the photosensitive device can be manufactured together, and the process is simple.
While, for purposes of simplicity of explanation, the foregoing method embodiments have been described as a series of acts or combination of acts, it will be appreciated by those skilled in the art that the present invention is not limited by the illustrated ordering of acts, as some steps may occur in other orders or concurrently with other steps in accordance with the invention. Further, those skilled in the art should also appreciate that the embodiments described in the specification are preferred embodiments and that the acts and modules referred to are not necessarily required by the invention.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The substrate, the manufacturing method thereof, the display panel and the display device provided by the invention are described in detail, and the principle and the embodiment of the invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (7)
1. A substrate is characterized by comprising a substrate, a plurality of ultrasonic sensing devices and a plurality of photosensitive devices, wherein the ultrasonic sensing devices and the photosensitive devices are arranged on the substrate in the same layer; the ultrasonic sensor comprises a cavity structure and a first buffer layer, the photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layer and the second buffer layer are arranged on the same layer, the cavity structure is located between the substrate and the first buffer layer, and the photosensitive structure is located between the substrate and the second buffer layer;
wherein the ultrasound sensing device is configured to detect depth information of a target region; the photosensitive device is configured to detect two-dimensional information of the target area surface;
the ultrasonic sensing device includes an ultrasonic sensing unit including:
a first plate formed on the substrate;
a first insulating layer covering the first electrode plate;
a first passivation layer covering the first insulating layer;
the first buffer layer partially covers the first passivation layer, the cavity structure is arranged between the first buffer layer and the first passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the cavity structure on the substrate;
the second polar plate is formed on the first buffer layer, and the orthographic projection of the second polar plate on the substrate at least partially covers the orthographic projection of the cavity structure on the substrate;
a first connection layer covering the second electrode plate;
the ultrasonic sensor device further includes a first thin film transistor including:
a first electrode layer;
the second connecting layer is connected with the first electrode layer through a first through hole, the second connecting layer is connected with the first polar plate through a second through hole, and the second connecting layer and the second polar plate are arranged on the same layer;
a first composite resin layer covering the second connection layer;
the photosensitive device includes a photosensitive cell, the photosensitive cell including:
a third insulating layer formed on the substrate, the third insulating layer and the first insulating layer being disposed on the same layer;
the photosensitive structure comprises a second electrode layer, a photosensitive layer and a third electrode layer which are arranged in a laminated mode, wherein the second electrode layer is arranged close to the third insulating layer and partially covers the third insulating layer, the third electrode layer at least partially covers the photosensitive layer, and the second electrode layer and the first electrode layer are arranged on the same layer;
the second buffer layer covers the photosensitive structure;
the third connecting layer is formed on the second buffer layer and is connected with the third electrode layer through a third through hole, and the third connecting layer and the second connecting layer are arranged on the same layer;
a second composite resin layer covering a portion of the second buffer layer exposed at the third connection layer, the second composite resin layer being disposed on the same layer as the first composite resin layer;
and a fourth connection layer formed on the second composite resin layer, the fourth connection layer covering a portion of the third connection layer exposed from the second composite resin layer, the fourth connection layer being disposed on the same layer as the first connection layer.
2. The substrate according to claim 1, wherein the second composite resin layer comprises:
a third passivation layer having an orthographic projection on the substrate that does not overlap with an orthographic projection of the photosensitive structure on the substrate;
a first resin layer covering the third passivation layer, and a portion of the second buffer layer exposed between the third connection layer and the third passivation layer.
3. The substrate of claim 1, wherein the photosensitive device further comprises a second thin film transistor, the second thin film transistor comprising:
the fourth electrode layer is arranged on the same layer as the second electrode layer and is connected with the second electrode layer;
and the third composite resin layer and the second composite resin layer are arranged on the same layer.
4. A method of preparing a substrate, the method comprising:
providing a substrate;
forming a plurality of ultrasonic sensing devices and a plurality of photosensitive devices on the same layer on the substrate, wherein each ultrasonic sensing device comprises a cavity structure and a first buffer layer, each photosensitive device comprises a photosensitive structure and a second buffer layer, the first buffer layer and the second buffer layer are arranged on the same layer, the cavity structure is positioned between the substrate and the first buffer layer, and the photosensitive structure is positioned between the substrate and the second buffer layer;
wherein the ultrasound sensing device is configured to detect depth information of a target region; the photosensitive device is configured to detect two-dimensional information of the target area surface;
the forming of the plurality of ultrasonic sensing devices and the plurality of photosensitive devices on the substrate in the same layer includes:
forming a first polar plate on the substrate through a composition process;
forming a first insulating layer and a third insulating layer on the same layer, wherein the first insulating layer covers the first polar plate;
forming a first electrode layer, a second electrode layer in the photosensitive structure and a fourth electrode layer on the same layer, wherein the second electrode layer is arranged close to the third insulating layer and partially covers the third insulating layer, and the fourth electrode layer is connected with the second electrode layer;
forming a first passivation layer covering the first insulating layer;
forming a sacrificial layer and a photosensitive layer in the photosensitive structure on the same layer, wherein the photosensitive layer is formed on the part of the second electrode layer exposed out of the first passivation layer, the sacrificial layer is formed on the first passivation layer, and the orthographic projection of the first polar plate on the substrate covers the orthographic projection of the sacrificial layer on the substrate;
forming a third electrode layer in the photosensitive structure on the photosensitive layer, the third electrode layer at least partially covering the photosensitive layer;
forming the first buffer layer and the second buffer layer on the same layer, and forming the cavity structure between the first buffer layer and the first passivation layer, wherein the first buffer layer partially covers the first passivation layer, the second buffer layer covers the photosensitive structure, and an orthographic projection of the first polar plate on the substrate covers an orthographic projection of the cavity structure on the substrate;
forming a second polar plate, a second connecting layer and a third connecting layer on the same layer, wherein the second polar plate is formed on the first buffer layer, the orthographic projection of the second polar plate on the substrate at least partially covers the orthographic projection of the cavity structure on the substrate, the second connecting layer is connected with the first electrode layer through a first through hole, the second connecting layer is connected with the first polar plate through a second through hole, the third connecting layer is formed on the second buffer layer, and the third connecting layer is connected with the third electrode layer through a third through hole;
forming a first composite resin layer, a second composite resin layer and a third composite resin layer on the same layer, wherein the first composite resin layer covers the second connecting layer, and the second composite resin layer covers the part of the second buffer layer exposed out of the third connecting layer;
and forming a first connecting layer and a fourth connecting layer on the same layer, wherein the first connecting layer covers the exposed part of the second pole plate between the first composite resin layer and the second composite resin layer, the fourth connecting layer is formed on the second composite resin layer, and the fourth connecting layer covers the exposed part of the third connecting layer on the second composite resin layer.
5. The method of claim 4, wherein the first buffer layer comprises a first sub-buffer layer and a second sub-buffer layer arranged in a stack, and the second buffer layer comprises a third sub-buffer layer and a fourth sub-buffer layer arranged in a stack;
forming the first buffer layer and the second buffer layer on the same layer, and forming the cavity structure between the first buffer layer and the first passivation layer, including:
forming the first sub buffer layer and the third sub buffer layer on the same layer, wherein the first sub buffer layer is provided with an opening partially exposing the sacrificial layer;
removing the sacrificial layer through the opening to form the cavity structure between the first buffer layer and the first passivation layer;
and forming the second sub-buffer layer and the fourth sub-buffer layer on the same layer, wherein the second sub-buffer layer covers the first sub-buffer layer and the opening, and the fourth sub-buffer layer covers the third sub-buffer layer.
6. A display panel comprising the substrate according to any one of claims 1 to 3.
7. A display device characterized by comprising the display panel according to claim 6.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105247460A (en) * | 2013-06-03 | 2016-01-13 | 高通股份有限公司 | Multifunctional pixel and display |
| CN109461751A (en) * | 2018-11-14 | 2019-03-12 | 京东方科技集团股份有限公司 | Photoelectric detection system and preparation method thereof, heartbeat detection device and electronic equipment |
| CN110008929A (en) * | 2019-04-16 | 2019-07-12 | 京东方科技集团股份有限公司 | CMUT unit and preparation method thereof, CMUT panel and display panel |
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| JP6202662B2 (en) * | 2012-11-27 | 2017-09-27 | 日東電工株式会社 | Opto-electric hybrid board and manufacturing method thereof |
| CN107330411A (en) * | 2017-07-04 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of fingerprint identification device and preparation method thereof, touch control display apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105247460A (en) * | 2013-06-03 | 2016-01-13 | 高通股份有限公司 | Multifunctional pixel and display |
| CN109461751A (en) * | 2018-11-14 | 2019-03-12 | 京东方科技集团股份有限公司 | Photoelectric detection system and preparation method thereof, heartbeat detection device and electronic equipment |
| CN110008929A (en) * | 2019-04-16 | 2019-07-12 | 京东方科技集团股份有限公司 | CMUT unit and preparation method thereof, CMUT panel and display panel |
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